FQP3P50 ON
Produktcode: 154101
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Lieblingsprodukt
Hersteller: ON
Gehäuse: TO-220
Drain-Source-Spannung Uds, V: 500 В
Drain-Strom Id, A: 2,7 А
Durchlasswiderstand Rds(on), Ohm: 3,9 Ом
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 510/18
Montage: THT
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Weitere Produktangebote FQP3P50 nach Preis ab 1.39 EUR bis 4.32 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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FQP3P50 | onsemi / Fairchild |
MOSFETs 500V P-Channel QFET |
auf Bestellung 910 Stücke: Lieferzeit 10-14 Tag (e) |
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FQP3P50 | onsemi |
Description: MOSFET P-CH 500V 2.7A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc) Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.35A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V |
auf Bestellung 1645 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FQP3P50 |
|
Hersteller: onsemi / Fairchild
MOSFETs 500V P-Channel QFET
MOSFETs 500V P-Channel QFET
auf Bestellung 910 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.32 EUR |
| 10+ | 2.12 EUR |
| 100+ | 1.89 EUR |
| 500+ | 1.51 EUR |
| 1000+ | 1.39 EUR |
| FQP3P50 |
|
Hersteller: onsemi
Description: MOSFET P-CH 500V 2.7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.35A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
Description: MOSFET P-CH 500V 2.7A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.35A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
auf Bestellung 1645 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.32 EUR |
| 50+ | 2.11 EUR |
| 100+ | 1.89 EUR |
| 500+ | 1.51 EUR |
| 1000+ | 1.39 EUR |