FQP47P06
Produktcode: 166999
zu Favoriten hinzufügen
Lieblingsprodukt
Hersteller:
Transistoren > Transistoren P-Kanal-Feld
Produktrezensionen
Produktbewertung abgeben
Weitere Produktangebote FQP47P06 nach Preis ab 3.42 EUR bis 9.76 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FQP47P06 | ON-Semiconductor |
Transistor P-Channel MOSFET; 60V; 25V; 26mOhm; 47A; 160W; -55°C ~ 175°C; FQP47P06 TFQP47p06 Anzahl je Verpackung: 5 Stücke |
auf Bestellung 45 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||
 |
FQP47P06 | onsemi |
MOSFETs 60V P-Channel QFET |
auf Bestellung 3546 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
FQP47P06 | onsemi |
Description: MOSFET P-CH 60V 47A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 23.5A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V |
auf Bestellung 3740 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
FQP47P06 | ONSEMI |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; TO220AB Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -33.2A Power dissipation: 160W Case: TO220AB Gate-source voltage: ±25V On-state resistance: 26mΩ Mounting: THT Gate charge: 110nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 174 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FQP47P06 |
|
Hersteller: ON-Semiconductor
Transistor P-Channel MOSFET; 60V; 25V; 26mOhm; 47A; 160W; -55°C ~ 175°C; FQP47P06 TFQP47p06
Anzahl je Verpackung: 5 Stücke
Transistor P-Channel MOSFET; 60V; 25V; 26mOhm; 47A; 160W; -55°C ~ 175°C; FQP47P06 TFQP47p06
Anzahl je Verpackung: 5 Stücke
auf Bestellung 45 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 7.75 EUR |
| FQP47P06 |
|
Hersteller: onsemi
MOSFETs 60V P-Channel QFET
MOSFETs 60V P-Channel QFET
auf Bestellung 3546 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 9.13 EUR |
| 10+ | 5.62 EUR |
| 100+ | 3.96 EUR |
| 500+ | 3.56 EUR |
| 1000+ | 3.42 EUR |
| FQP47P06 |
|
Hersteller: onsemi
Description: MOSFET P-CH 60V 47A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 23.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Description: MOSFET P-CH 60V 47A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 23.5A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
auf Bestellung 3740 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.76 EUR |
| 10+ | 6.47 EUR |
| 50+ | 5.07 EUR |
| 100+ | 4.62 EUR |
| 500+ | 3.82 EUR |
| FQP47P06 |
|
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -33.2A; 160W; TO220AB
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -33.2A
Power dissipation: 160W
Case: TO220AB
Gate-source voltage: ±25V
On-state resistance: 26mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 174 Stücke:
Lieferzeit 14-21 Tag (e)