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SGH40N60UFDTU SGH40N60UFDTU onsemi SGH40N60UFD.pdf Description: IGBT 600V 40A 160W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
Produkt ist nicht verfügbar
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ISL9N303AP3 ISL9N303AP3 onsemi ISL9N303AP3.pdf Description: MOSFET N-CH 30V 75A TO220-3
Produkt ist nicht verfügbar
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FJL6820TU FJL6820TU onsemi FJL6820.pdf Description: TRANS NPN 750V 20A TO264-3
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector (Ic) (Max): 20 A
Supplier Device Package: TO-264-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 5.5 @ 11A, 5V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 2.75A, 11A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
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KSD363YTU KSD363YTU onsemi ksd363-d.pdf Description: TRANS NPN 120V 6A TO-220-3
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: TO-220-3
Frequency - Transition: 10MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 5V
Current - Collector Cutoff (Max): 1mA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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KSD363OTU KSD363OTU onsemi ksd363-d.pdf Description: TRANS NPN 120V 6A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1A, 5V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 40 W
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FQA20N40 FQA20N40 onsemi FQA20N40.pdf Description: MOSFET N-CH 400V 19.5A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 9.8A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
Produkt ist nicht verfügbar
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KSD363RTU KSD363RTU onsemi ksd363-d.pdf Description: TRANS NPN 120V 6A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 40 W
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FQA40N25 FQA40N25 onsemi fqa40n25-d.pdf Description: MOSFET N-CH 250V 40A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
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FQA48N20 FQA48N20 onsemi FQA48N20.pdf Description: MOSFET N-CH 200V 48A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
Produkt ist nicht verfügbar
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HUF75345G3 HUF75345G3 onsemi huf75345s3s-d.pdf Description: MOSFET N-CH 55V 75A TO247-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 325W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
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HGT1S20N35G3VLS HGT1S20N35G3VLS onsemi HGTP20N35G3.pdf Description: IGBT 380V 20A 150W TO263AB
Power - Max: 150 W
Voltage - Collector Emitter Breakdown (Max): 375 V
Current - Collector (Ic) (Max): 20 A
Part Status: Obsolete
Gate Charge: 28.7 nC
Test Condition: 300V, 10A, 25Ohm, 5V
Td (on/off) @ 25°C: -/15µs
Supplier Device Package: TO-263 (D2Pak)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 5V, 20A
Input Type: Logic
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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FIN24CGFX FIN24CGFX onsemi FIN24C.pdf Description: IC SERIALIZER/DESERIAL 42-BGA
Supplier Device Package: 42-USS-BGA (3.5x4.5)
Number of Inputs: 22/1
Input Type: LVCMOS
Data Rate: 520Mbps
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -30°C ~ 70°C (TA)
Function: Serializer/Deserializer
Number of Outputs: 1/22
Mounting Type: Surface Mount
Output Type: LVCMOS
Package / Case: 42-VFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FIN24ACGFX onsemi FIN24AC.pdf Description: IC SERIALIZER/DESERIAL 42-BGA
Supplier Device Package: 42-USS-BGA (3.5x4.5)
Number of Inputs: 22/1
Input Type: LVCMOS
Data Rate: 520Mbps
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -30°C ~ 70°C (TA)
Function: Serializer/Deserializer
Number of Outputs: 1/22
Mounting Type: Surface Mount
Output Type: LVCMOS
Package / Case: 42-VFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FS8S0965RCBSYDT FS8S0965RCBSYDT onsemi FS8S0965RCB.pdf Description: IC OFFLINE SW FLBACK TO220F-5L
Part Status: Obsolete
Control Features: Soft Start, Sync
Voltage - Start Up: 15 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-220F-5L (Forming)
Voltage - Supply (Vcc/Vdd): 9V ~ 40V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 20kHz
Duty Cycle: 95%
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: TO-220-5 Formed Leads
Packaging: Tube
Produkt ist nicht verfügbar
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FQA16N25C FQA16N25C onsemi FQA16N25C.pdf Description: MOSFET N-CH 250V 17.8A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 8.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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FOD0708 FOD0708 onsemi FOD0708,%200738%20Rev2009.pdf Description: OPTOISO 2.5KV PUSH PULL 8SO
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FGA15N120ANDTU FGA15N120ANDTU onsemi FGA15N120AND.pdf Description: IGBT NPT 1200V 24A TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 330 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
Supplier Device Package: TO-3PN
IGBT Type: NPT
Td (on/off) @ 25°C: 90ns/310ns
Switching Energy: 3.27mJ (on), 600µJ (off)
Test Condition: 600V, 15A, 20Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 200 W
Produkt ist nicht verfügbar
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HGT1S10N120BNST HGT1S10N120BNST onsemi hgtp10n120bn-d.pdf Description: IGBT NPT 1200V 35A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/165ns
Switching Energy: 320µJ (on), 800µJ (off)
Test Condition: 960V, 10A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 298 W
Produkt ist nicht verfügbar
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HGT1S10N120BNS HGT1S10N120BNS onsemi hgtp10n120bn-d.pdf Description: IGBT NPT 1200V 35A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/165ns
Switching Energy: 320µJ (on), 800µJ (off)
Test Condition: 960V, 10A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 298 W
Produkt ist nicht verfügbar
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FOD0708R2 FOD0708R2 onsemi FOD0708,%200738%20Rev2009.pdf Description: OPTOISO 2.5KV PUSH PULL 8SO
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HGTG5N120BND HGTG5N120BND onsemi hgtp5n120bnd-d.pdf Description: IGBT NPT 1200V 21A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A
Supplier Device Package: TO-247-3
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/160ns
Switching Energy: 450µJ (on), 390µJ (off)
Test Condition: 960V, 5A, 25Ohm, 15V
Gate Charge: 53 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 167 W
Produkt ist nicht verfügbar
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FJAF6920ATU FJAF6920ATU onsemi FJAF6920.pdf Description: TRANS NPN 800V 20A TO3PF
Power - Max: 60 W
Voltage - Collector Emitter Breakdown (Max): 800 V
Current - Collector (Ic) (Max): 20 A
Part Status: Obsolete
Supplier Device Package: TO-3PF
DC Current Gain (hFE) (Min) @ Ic, Vce: 5.5 @ 11A, 5V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 2.75A, 11A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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FQAF70N15 FQAF70N15 onsemi FQAF70N15.pdf Description: MOSFET N-CH 150V 44A TO3PF
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
FET Type: N-Channel
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FJL6920YDTU FJL6920YDTU onsemi FJL6920.pdf Description: TRANS NPN 800V 20A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2.75A, 11A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5.5 @ 11A, 5V
Supplier Device Package: TO-264-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 200 W
Produkt ist nicht verfügbar
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FJL6920TU FJL6920TU onsemi fjl6920-d.pdf Description: TRANS NPN 800V 20A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2.75A, 11A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5.5 @ 11A, 5V
Supplier Device Package: TO-264-3
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 200 W
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FQAF11N90 FQAF11N90 onsemi FQAF11N90.pdf Description: MOSFET N-CH 900V 7.2A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 960mOhm @ 3.6A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Produkt ist nicht verfügbar
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RHRG3060CC RHRG3060CC onsemi rhrg3060cc-d.pdf Description: DIODE ARR AVAL 600V 30A TO247-3
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Avalanche
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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SGH80N60UFTU SGH80N60UFTU onsemi SGH80N60UF.pdf Description: IGBT 600V 80A 195W TO3P
Current - Collector (Ic) (Max): 80 A
Part Status: Obsolete
Gate Charge: 175 nC
Test Condition: 300V, 40A, 5Ohm, 15V
Switching Energy: 570µJ (on), 590µJ (off)
Td (on/off) @ 25°C: 23ns/90ns
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Power - Max: 195 W
Current - Collector Pulsed (Icm): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Produkt ist nicht verfügbar
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HGT1S20N60C3S9A HGT1S20N60C3S9A onsemi hgt1s20n60c3s-d.pdf Description: IGBT 600V 45A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 28ns/151ns
Switching Energy: 295µJ (on), 500µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 91 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 164 W
Produkt ist nicht verfügbar
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MM74C914MX MM74C914MX onsemi MM74C914.pdf Description: IC INVERT SCHMITT 6CH 1IN 14SOIC
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 4.3V ~ 12.9V
Input Logic Level - Low: 0.7V ~ 2.1V
Max Propagation Delay @ V, Max CL: 200ns @ 10V, 50pF
Part Status: Obsolete
Number of Circuits: 6
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FIN3385MTDX FIN3385MTDX onsemi fin3386-d.pdf Description: IC SERIALIZER/DESERIAL 56-TSSOP
Part Status: Active
Supplier Device Package: 56-TSSOP
Number of Inputs: 28
Input Type: LVTTL
Data Rate: 2.38Gbps
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Function: Serializer
Number of Outputs: 4
Mounting Type: Surface Mount
Output Type: LVDS
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Packaging: Tape & Reel (TR)
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FQAF13N80 FQAF13N80 onsemi fqaf13n80-d.pdf Description: MOSFET N-CH 800V 8A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
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FGL60N100BNTDTU FGL60N100BNTDTU onsemi fgl60n100bntd-d.pdf Description: IGBT NPT/TRENCH 1000V 60A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.2 µs
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-264-3
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 140ns/630ns
Test Condition: 600V, 60A, 51Ohm, 15V
Gate Charge: 275 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
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HGTG12N60B3 HGTG12N60B3 onsemi HGTG12N60B3.pdf Description: IGBT 600V 27A TO-247-3
Power - Max: 104 W
Current - Collector Pulsed (Icm): 110 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 27 A
Part Status: Obsolete
Gate Charge: 51 nC
Test Condition: 480V, 12A, 25Ohm, 15V
Switching Energy: 150µJ (on), 250µJ (off)
Td (on/off) @ 25°C: 26ns/150ns
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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ML4800ISX ML4800ISX onsemi ML4800.pdf Description: IC PFC CTR AV CURR 76KHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 11V ~ 16.5V
Frequency - Switching: 76kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Current - Startup: 200 µA
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ML4800IS ML4800IS onsemi ML4800.pdf Description: IC PFC CTR AV CURR 76KHZ 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 11V ~ 16.5V
Frequency - Switching: 76kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Current - Startup: 200 µA
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FS8S0765RCBSYDT FS8S0765RCBSYDT onsemi FS8S0765RCB.pdf Description: IC OFFLINE SW FLBACK TO220F-5L
Part Status: Obsolete
Control Features: Soft Start, Sync
Voltage - Start Up: 15 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-220F-5L (Forming)
Voltage - Supply (Vcc/Vdd): 9V ~ 40V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 20kHz
Duty Cycle: 95%
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: TO-220-5 Formed Leads
Packaging: Tube
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FQA11N90 FQA11N90 onsemi FQA11N90_11N90_F109.pdf Description: MOSFET N-CH 900V 11.4A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 960mOhm @ 5.7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
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FSES0765RGWDTU onsemi FSES0765RG.pdf Description: IC OFFLINE SW FLYBACK TO220-6L
Power (Watts): 90 W
Part Status: Obsolete
Control Features: Sync
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Supply (Vcc/Vdd): 9V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 20kHz
Duty Cycle: 55%
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: TO-220-6 Formed Leads
Packaging: Tube
Supplier Device Package: TO-220-6L (Forming)
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HGTG11N120CND HGTG11N120CND onsemi hgtg11n120cnd-d.pdf Description: IGBT NPT 1200V 43A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 11A
Supplier Device Package: TO-247-3
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/180ns
Switching Energy: 950µJ (on), 1.3mJ (off)
Test Condition: 960V, 11A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 298 W
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ISL9R30120G2 ISL9R30120G2 onsemi isl9r30120g2-d.pdf Description: DIODE GEN PURP 1.2KV 30A TO247-2
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 30A
Technology: Avalanche
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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FQA24N50F FQA24N50F onsemi FQA24N50F_DS.pdf Description: MOSFET N-CH 500V 24A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 12A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
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FIN3386MTDX FIN3386MTDX onsemi fin3386-d.pdf Description: IC SERIALIZER/DESERIAL 56TSSOP
Supplier Device Package: 56-TSSOP
Number of Inputs: 4
Input Type: LVDS
Data Rate: 2.38Gbps
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Function: Deserializer
Number of Outputs: 28
Mounting Type: Surface Mount
Output Type: LVTTL
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Packaging: Tape & Reel (TR)
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ISL9N302AP3 ISL9N302AP3 onsemi ISL9N302AP3.pdf Description: MOSFET N-CH 30V 75A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Power Dissipation (Max): 345W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Vgs(th) (Max) @ Id: 3V @ 250µA
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SGH30N60RUFDTU SGH30N60RUFDTU onsemi sgh30n60rufd-d.pdf Description: IGBT 600V 48A 235W TO3P
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 30A
Reverse Recovery Time (trr): 95 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Power - Max: 235 W
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 48 A
Gate Charge: 85 nC
Test Condition: 300V, 30A, 7Ohm, 15V
Switching Energy: 919µJ (on), 814µJ (off)
Td (on/off) @ 25°C: 30ns/54ns
Supplier Device Package: TO-3P
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FQA30N40 FQA30N40 onsemi ONSM-S-A0003590957-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 400V 30A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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FQA24N60 FQA24N60 onsemi fqa24n60-d.pdf Description: MOSFET N-CH 600V 23.5A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.5A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 11.8A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
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MM74C244WM MM74C244WM onsemi MM74C240.pdf Description: IC BUFFER NON-INVERT 15V 20SOIC
Supplier Device Package: 20-SOIC
Current - Output High, Low: 70mA, 70mA
Number of Bits per Element: 4
Voltage - Supply: 3V ~ 15V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tube
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FGA25N120ANDTU FGA25N120ANDTU onsemi FGA25N120AND.pdf Description: IGBT NPT 1200V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: TO-3P
IGBT Type: NPT
Td (on/off) @ 25°C: 60ns/170ns
Switching Energy: 4.8mJ (on), 1mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 310 W
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FFAF60U60DNTU FFAF60U60DNTU onsemi FFAF60U60DN.pdf Description: DIODE ARRAY GP 600V 60A TO3PF
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-3PF
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
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FQA44N30 FQA44N30 onsemi fqa44n30-d.pdf Description: MOSFET N-CH 300V 43.5A TO3PN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 21.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
FET Type: N-Channel
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FQA55N25 FQA55N25 onsemi fqa55n25-d.pdf Description: MOSFET N-CH 250V 55A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 27.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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FQA140N10 FQA140N10 onsemi fqa140n10-d.pdf Description: MOSFET N-CH 100V 140A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
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FIN1104MTCX FIN1104MTCX onsemi fin1104-d.pdf Description: IC REDRIVER LVDS 4CH 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Delay Time: 1.75ns
Number of Channels: 4
Mounting Type: Surface Mount
Output: LVDS
Type: Buffer, ReDriver
Input: LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Applications: LVDS
Current - Supply: 41mA
Data Rate (Max): 800Mbps
Supplier Device Package: 24-TSSOP
Part Status: Active
Capacitance - Input: 2.6 pF
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FIN1104MTC FIN1104MTC onsemi fin1104-d.pdf Description: IC REDRIVER LVDS 4CH 24TSSOP
Capacitance - Input: 2.6 pF
Part Status: Active
Supplier Device Package: 24-TSSOP
Data Rate (Max): 800Mbps
Current - Supply: 41mA
Applications: LVDS
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Input: LVDS, LVPECL
Type: Buffer, ReDriver
Output: LVDS
Mounting Type: Surface Mount
Number of Channels: 4
Delay Time: 1.75ns
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
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RHRG75120 RHRG75120 onsemi rhrg75120-d.pdf Description: DIODE AVALANCHE 1200V 75A TO2472
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 75 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 75A
Technology: Avalanche
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
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FQA65N20 FQA65N20 onsemi fqa65n20-d.pdf Description: MOSFET N-CH 200V 65A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 32.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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ISL9K3060G3 ISL9K3060G3 onsemi isl9k3060g3-d.pdf Description: DIODE ARR AVAL 600V 30A TO247-3
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Avalanche
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Last Time Buy
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
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FIN1108MTDX FIN1108MTDX onsemi fin1108-d.pdf Description: IC REDRIVER LVDS 8CH 48TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Delay Time: 1.75ns
Number of Channels: 8
Mounting Type: Surface Mount
Output: LVDS
Type: Buffer, ReDriver
Input: LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Applications: LVDS
Current - Supply: 80mA (Max)
Data Rate (Max): 800Mbps
Supplier Device Package: 48-TSSOP
Capacitance - Input: 3 pF
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FIN1108MTD FIN1108MTD onsemi fin1108-d.pdf Description: IC REDRIVER LVDS 8CH 48TSSOP
Capacitance - Input: 3 pF
Supplier Device Package: 48-TSSOP
Data Rate (Max): 800Mbps
Current - Supply: 80mA (Max)
Applications: LVDS
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Input: LVDS, LVPECL
Type: Buffer, ReDriver
Output: LVDS
Mounting Type: Surface Mount
Number of Channels: 8
Delay Time: 1.75ns
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Packaging: Tube
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SGH40N60UFDTU SGH40N60UFD.pdf
SGH40N60UFDTU
Hersteller: onsemi
Description: IGBT 600V 40A 160W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 97 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
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ISL9N303AP3 ISL9N303AP3.pdf
ISL9N303AP3
Hersteller: onsemi
Description: MOSFET N-CH 30V 75A TO220-3
Produkt ist nicht verfügbar
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FJL6820TU FJL6820.pdf
FJL6820TU
Hersteller: onsemi
Description: TRANS NPN 750V 20A TO264-3
Power - Max: 200 W
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector (Ic) (Max): 20 A
Supplier Device Package: TO-264-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 5.5 @ 11A, 5V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 2.75A, 11A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
Produkt ist nicht verfügbar
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KSD363YTU ksd363-d.pdf
KSD363YTU
Hersteller: onsemi
Description: TRANS NPN 120V 6A TO-220-3
Power - Max: 40 W
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 6 A
Part Status: Active
Supplier Device Package: TO-220-3
Frequency - Transition: 10MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 5V
Current - Collector Cutoff (Max): 1mA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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KSD363OTU ksd363-d.pdf
KSD363OTU
Hersteller: onsemi
Description: TRANS NPN 120V 6A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1A, 5V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 40 W
Produkt ist nicht verfügbar
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FQA20N40 FQA20N40.pdf
FQA20N40
Hersteller: onsemi
Description: MOSFET N-CH 400V 19.5A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 9.8A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 25 V
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KSD363RTU ksd363-d.pdf
KSD363RTU
Hersteller: onsemi
Description: TRANS NPN 120V 6A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 40 W
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9+2.37 EUR
50+1.11 EUR
100+0.99 EUR
500+0.77 EUR
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FQA40N25 fqa40n25-d.pdf
FQA40N25
Hersteller: onsemi
Description: MOSFET N-CH 250V 40A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
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3+8.68 EUR
30+4.83 EUR
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FQA48N20 FQA48N20.pdf
FQA48N20
Hersteller: onsemi
Description: MOSFET N-CH 200V 48A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 24A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 25 V
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HUF75345G3 huf75345s3s-d.pdf
HUF75345G3
Hersteller: onsemi
Description: MOSFET N-CH 55V 75A TO247-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 275 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 325W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
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3+9.53 EUR
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120+4.43 EUR
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HGT1S20N35G3VLS HGTP20N35G3.pdf
HGT1S20N35G3VLS
Hersteller: onsemi
Description: IGBT 380V 20A 150W TO263AB
Power - Max: 150 W
Voltage - Collector Emitter Breakdown (Max): 375 V
Current - Collector (Ic) (Max): 20 A
Part Status: Obsolete
Gate Charge: 28.7 nC
Test Condition: 300V, 10A, 25Ohm, 5V
Td (on/off) @ 25°C: -/15µs
Supplier Device Package: TO-263 (D2Pak)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 5V, 20A
Input Type: Logic
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produkt ist nicht verfügbar
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FIN24CGFX FIN24C.pdf
FIN24CGFX
Hersteller: onsemi
Description: IC SERIALIZER/DESERIAL 42-BGA
Supplier Device Package: 42-USS-BGA (3.5x4.5)
Number of Inputs: 22/1
Input Type: LVCMOS
Data Rate: 520Mbps
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -30°C ~ 70°C (TA)
Function: Serializer/Deserializer
Number of Outputs: 1/22
Mounting Type: Surface Mount
Output Type: LVCMOS
Package / Case: 42-VFBGA
Packaging: Tape & Reel (TR)
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FIN24ACGFX FIN24AC.pdf
Hersteller: onsemi
Description: IC SERIALIZER/DESERIAL 42-BGA
Supplier Device Package: 42-USS-BGA (3.5x4.5)
Number of Inputs: 22/1
Input Type: LVCMOS
Data Rate: 520Mbps
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -30°C ~ 70°C (TA)
Function: Serializer/Deserializer
Number of Outputs: 1/22
Mounting Type: Surface Mount
Output Type: LVCMOS
Package / Case: 42-VFBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FS8S0965RCBSYDT FS8S0965RCB.pdf
FS8S0965RCBSYDT
Hersteller: onsemi
Description: IC OFFLINE SW FLBACK TO220F-5L
Part Status: Obsolete
Control Features: Soft Start, Sync
Voltage - Start Up: 15 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-220F-5L (Forming)
Voltage - Supply (Vcc/Vdd): 9V ~ 40V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 20kHz
Duty Cycle: 95%
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: TO-220-5 Formed Leads
Packaging: Tube
Produkt ist nicht verfügbar
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FQA16N25C FQA16N25C.pdf
FQA16N25C
Hersteller: onsemi
Description: MOSFET N-CH 250V 17.8A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 53.5 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3P
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 8.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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FOD0708 FOD0708,%200738%20Rev2009.pdf
FOD0708
Hersteller: onsemi
Description: OPTOISO 2.5KV PUSH PULL 8SO
Produkt ist nicht verfügbar
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FGA15N120ANDTU FGA15N120AND.pdf
FGA15N120ANDTU
Hersteller: onsemi
Description: IGBT NPT 1200V 24A TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 330 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
Supplier Device Package: TO-3PN
IGBT Type: NPT
Td (on/off) @ 25°C: 90ns/310ns
Switching Energy: 3.27mJ (on), 600µJ (off)
Test Condition: 600V, 15A, 20Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 200 W
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HGT1S10N120BNST hgtp10n120bn-d.pdf
HGT1S10N120BNST
Hersteller: onsemi
Description: IGBT NPT 1200V 35A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/165ns
Switching Energy: 320µJ (on), 800µJ (off)
Test Condition: 960V, 10A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 298 W
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HGT1S10N120BNS hgtp10n120bn-d.pdf
HGT1S10N120BNS
Hersteller: onsemi
Description: IGBT NPT 1200V 35A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/165ns
Switching Energy: 320µJ (on), 800µJ (off)
Test Condition: 960V, 10A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 298 W
Produkt ist nicht verfügbar
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FOD0708R2 FOD0708,%200738%20Rev2009.pdf
FOD0708R2
Hersteller: onsemi
Description: OPTOISO 2.5KV PUSH PULL 8SO
Produkt ist nicht verfügbar
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HGTG5N120BND hgtp5n120bnd-d.pdf
HGTG5N120BND
Hersteller: onsemi
Description: IGBT NPT 1200V 21A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 5A
Supplier Device Package: TO-247-3
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/160ns
Switching Energy: 450µJ (on), 390µJ (off)
Test Condition: 960V, 5A, 25Ohm, 15V
Gate Charge: 53 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 167 W
Produkt ist nicht verfügbar
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FJAF6920ATU FJAF6920.pdf
FJAF6920ATU
Hersteller: onsemi
Description: TRANS NPN 800V 20A TO3PF
Power - Max: 60 W
Voltage - Collector Emitter Breakdown (Max): 800 V
Current - Collector (Ic) (Max): 20 A
Part Status: Obsolete
Supplier Device Package: TO-3PF
DC Current Gain (hFE) (Min) @ Ic, Vce: 5.5 @ 11A, 5V
Current - Collector Cutoff (Max): 1mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 2.75A, 11A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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FQAF70N15 FQAF70N15.pdf
FQAF70N15
Hersteller: onsemi
Description: MOSFET N-CH 150V 44A TO3PF
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 25 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
FET Type: N-Channel
Produkt ist nicht verfügbar
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FJL6920YDTU FJL6920.pdf
FJL6920YDTU
Hersteller: onsemi
Description: TRANS NPN 800V 20A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2.75A, 11A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5.5 @ 11A, 5V
Supplier Device Package: TO-264-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 200 W
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FJL6920TU fjl6920-d.pdf
FJL6920TU
Hersteller: onsemi
Description: TRANS NPN 800V 20A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 2.75A, 11A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 5.5 @ 11A, 5V
Supplier Device Package: TO-264-3
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 200 W
auf Bestellung 565 Stücke:
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2+16.54 EUR
25+9.96 EUR
100+8.39 EUR
500+7.41 EUR
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FQAF11N90 FQAF11N90.pdf
FQAF11N90
Hersteller: onsemi
Description: MOSFET N-CH 900V 7.2A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 960mOhm @ 3.6A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Produkt ist nicht verfügbar
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RHRG3060CC rhrg3060cc-d.pdf
RHRG3060CC
Hersteller: onsemi
Description: DIODE ARR AVAL 600V 30A TO247-3
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-247-3
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Avalanche
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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SGH80N60UFTU SGH80N60UF.pdf
SGH80N60UFTU
Hersteller: onsemi
Description: IGBT 600V 80A 195W TO3P
Current - Collector (Ic) (Max): 80 A
Part Status: Obsolete
Gate Charge: 175 nC
Test Condition: 300V, 40A, 5Ohm, 15V
Switching Energy: 570µJ (on), 590µJ (off)
Td (on/off) @ 25°C: 23ns/90ns
Supplier Device Package: TO-3P
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 40A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Power - Max: 195 W
Current - Collector Pulsed (Icm): 220 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Produkt ist nicht verfügbar
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HGT1S20N60C3S9A hgt1s20n60c3s-d.pdf
HGT1S20N60C3S9A
Hersteller: onsemi
Description: IGBT 600V 45A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 28ns/151ns
Switching Energy: 295µJ (on), 500µJ (off)
Test Condition: 480V, 20A, 10Ohm, 15V
Gate Charge: 91 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 45 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 164 W
Produkt ist nicht verfügbar
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MM74C914MX MM74C914.pdf
MM74C914MX
Hersteller: onsemi
Description: IC INVERT SCHMITT 6CH 1IN 14SOIC
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 15V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 4.3V ~ 12.9V
Input Logic Level - Low: 0.7V ~ 2.1V
Max Propagation Delay @ V, Max CL: 200ns @ 10V, 50pF
Part Status: Obsolete
Number of Circuits: 6
Produkt ist nicht verfügbar
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FIN3385MTDX fin3386-d.pdf
FIN3385MTDX
Hersteller: onsemi
Description: IC SERIALIZER/DESERIAL 56-TSSOP
Part Status: Active
Supplier Device Package: 56-TSSOP
Number of Inputs: 28
Input Type: LVTTL
Data Rate: 2.38Gbps
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Function: Serializer
Number of Outputs: 4
Mounting Type: Surface Mount
Output Type: LVDS
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Packaging: Tape & Reel (TR)
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FQAF13N80 fqaf13n80-d.pdf
FQAF13N80
Hersteller: onsemi
Description: MOSFET N-CH 800V 8A TO3PF
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PF
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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FGL60N100BNTDTU fgl60n100bntd-d.pdf
FGL60N100BNTDTU
Hersteller: onsemi
Description: IGBT NPT/TRENCH 1000V 60A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 1.2 µs
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-264-3
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 140ns/630ns
Test Condition: 600V, 60A, 51Ohm, 15V
Gate Charge: 275 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 180 W
Produkt ist nicht verfügbar
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HGTG12N60B3 HGTG12N60B3.pdf
HGTG12N60B3
Hersteller: onsemi
Description: IGBT 600V 27A TO-247-3
Power - Max: 104 W
Current - Collector Pulsed (Icm): 110 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 27 A
Part Status: Obsolete
Gate Charge: 51 nC
Test Condition: 480V, 12A, 25Ohm, 15V
Switching Energy: 150µJ (on), 250µJ (off)
Td (on/off) @ 25°C: 26ns/150ns
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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ML4800ISX ML4800.pdf
ML4800ISX
Hersteller: onsemi
Description: IC PFC CTR AV CURR 76KHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 11V ~ 16.5V
Frequency - Switching: 76kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Current - Startup: 200 µA
Produkt ist nicht verfügbar
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ML4800IS ML4800.pdf
ML4800IS
Hersteller: onsemi
Description: IC PFC CTR AV CURR 76KHZ 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 11V ~ 16.5V
Frequency - Switching: 76kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Current - Startup: 200 µA
Produkt ist nicht verfügbar
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FS8S0765RCBSYDT FS8S0765RCB.pdf
FS8S0765RCBSYDT
Hersteller: onsemi
Description: IC OFFLINE SW FLBACK TO220F-5L
Part Status: Obsolete
Control Features: Soft Start, Sync
Voltage - Start Up: 15 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-220F-5L (Forming)
Voltage - Supply (Vcc/Vdd): 9V ~ 40V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 20kHz
Duty Cycle: 95%
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: TO-220-5 Formed Leads
Packaging: Tube
Produkt ist nicht verfügbar
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FQA11N90 FQA11N90_11N90_F109.pdf
FQA11N90
Hersteller: onsemi
Description: MOSFET N-CH 900V 11.4A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.4A (Tc)
Rds On (Max) @ Id, Vgs: 960mOhm @ 5.7A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Produkt ist nicht verfügbar
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FSES0765RGWDTU FSES0765RG.pdf
Hersteller: onsemi
Description: IC OFFLINE SW FLYBACK TO220-6L
Power (Watts): 90 W
Part Status: Obsolete
Control Features: Sync
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Supply (Vcc/Vdd): 9V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 20kHz
Duty Cycle: 55%
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: TO-220-6 Formed Leads
Packaging: Tube
Supplier Device Package: TO-220-6L (Forming)
Produkt ist nicht verfügbar
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HGTG11N120CND hgtg11n120cnd-d.pdf
HGTG11N120CND
Hersteller: onsemi
Description: IGBT NPT 1200V 43A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 11A
Supplier Device Package: TO-247-3
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/180ns
Switching Energy: 950µJ (on), 1.3mJ (off)
Test Condition: 960V, 11A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 43 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 298 W
Produkt ist nicht verfügbar
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ISL9R30120G2 isl9r30120g2-d.pdf
ISL9R30120G2
Hersteller: onsemi
Description: DIODE GEN PURP 1.2KV 30A TO247-2
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 30A
Technology: Avalanche
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Produkt ist nicht verfügbar
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FQA24N50F FQA24N50F_DS.pdf
FQA24N50F
Hersteller: onsemi
Description: MOSFET N-CH 500V 24A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 12A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V
Produkt ist nicht verfügbar
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FIN3386MTDX fin3386-d.pdf
FIN3386MTDX
Hersteller: onsemi
Description: IC SERIALIZER/DESERIAL 56TSSOP
Supplier Device Package: 56-TSSOP
Number of Inputs: 4
Input Type: LVDS
Data Rate: 2.38Gbps
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Function: Deserializer
Number of Outputs: 28
Mounting Type: Surface Mount
Output Type: LVTTL
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Packaging: Tape & Reel (TR)
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1000+5.09 EUR
2000+4.99 EUR
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ISL9N302AP3 ISL9N302AP3.pdf
ISL9N302AP3
Hersteller: onsemi
Description: MOSFET N-CH 30V 75A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220-3
Power Dissipation (Max): 345W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Vgs(th) (Max) @ Id: 3V @ 250µA
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SGH30N60RUFDTU sgh30n60rufd-d.pdf
SGH30N60RUFDTU
Hersteller: onsemi
Description: IGBT 600V 48A 235W TO3P
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 30A
Reverse Recovery Time (trr): 95 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Power - Max: 235 W
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 48 A
Gate Charge: 85 nC
Test Condition: 300V, 30A, 7Ohm, 15V
Switching Energy: 919µJ (on), 814µJ (off)
Td (on/off) @ 25°C: 30ns/54ns
Supplier Device Package: TO-3P
Produkt ist nicht verfügbar
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FQA30N40 ONSM-S-A0003590957-1.pdf?t.download=true&u=5oefqw
FQA30N40
Hersteller: onsemi
Description: MOSFET N-CH 400V 30A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 4400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 290W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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FQA24N60 fqa24n60-d.pdf
FQA24N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 23.5A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.5A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 11.8A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5500 pF @ 25 V
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MM74C244WM MM74C240.pdf
MM74C244WM
Hersteller: onsemi
Description: IC BUFFER NON-INVERT 15V 20SOIC
Supplier Device Package: 20-SOIC
Current - Output High, Low: 70mA, 70mA
Number of Bits per Element: 4
Voltage - Supply: 3V ~ 15V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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FGA25N120ANDTU FGA25N120AND.pdf
FGA25N120ANDTU
Hersteller: onsemi
Description: IGBT NPT 1200V 40A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: TO-3P
IGBT Type: NPT
Td (on/off) @ 25°C: 60ns/170ns
Switching Energy: 4.8mJ (on), 1mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 310 W
Produkt ist nicht verfügbar
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FFAF60U60DNTU FFAF60U60DN.pdf
FFAF60U60DNTU
Hersteller: onsemi
Description: DIODE ARRAY GP 600V 60A TO3PF
Current - Reverse Leakage @ Vr: 25 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 60 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-3PF
Current - Average Rectified (Io) (per Diode): 60A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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FQA44N30 fqa44n30-d.pdf
FQA44N30
Hersteller: onsemi
Description: MOSFET N-CH 300V 43.5A TO3PN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 300 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 69mOhm @ 21.75A, 10V
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
FET Type: N-Channel
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FQA55N25 fqa55n25-d.pdf
FQA55N25
Hersteller: onsemi
Description: MOSFET N-CH 250V 55A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 27.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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FQA140N10 fqa140n10-d.pdf
FQA140N10
Hersteller: onsemi
Description: MOSFET N-CH 100V 140A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
auf Bestellung 293 Stücke:
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30+9.08 EUR
120+7.65 EUR
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FIN1104MTCX fin1104-d.pdf
FIN1104MTCX
Hersteller: onsemi
Description: IC REDRIVER LVDS 4CH 24TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Delay Time: 1.75ns
Number of Channels: 4
Mounting Type: Surface Mount
Output: LVDS
Type: Buffer, ReDriver
Input: LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Applications: LVDS
Current - Supply: 41mA
Data Rate (Max): 800Mbps
Supplier Device Package: 24-TSSOP
Part Status: Active
Capacitance - Input: 2.6 pF
auf Bestellung 10000 Stücke:
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2500+2.69 EUR
5000+2.63 EUR
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FIN1104MTC fin1104-d.pdf
FIN1104MTC
Hersteller: onsemi
Description: IC REDRIVER LVDS 4CH 24TSSOP
Capacitance - Input: 2.6 pF
Part Status: Active
Supplier Device Package: 24-TSSOP
Data Rate (Max): 800Mbps
Current - Supply: 41mA
Applications: LVDS
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Input: LVDS, LVPECL
Type: Buffer, ReDriver
Output: LVDS
Mounting Type: Surface Mount
Number of Channels: 4
Delay Time: 1.75ns
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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RHRG75120 rhrg75120-d.pdf
RHRG75120
Hersteller: onsemi
Description: DIODE AVALANCHE 1200V 75A TO2472
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.2 V @ 75 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-247-2
Current - Average Rectified (Io): 75A
Technology: Avalanche
Reverse Recovery Time (trr): 100 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-2
Packaging: Tube
Produkt ist nicht verfügbar
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FQA65N20 fqa65n20-d.pdf
FQA65N20
Hersteller: onsemi
Description: MOSFET N-CH 200V 65A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 32.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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ISL9K3060G3 isl9k3060g3-d.pdf
ISL9K3060G3
Hersteller: onsemi
Description: DIODE ARR AVAL 600V 30A TO247-3
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Avalanche
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Last Time Buy
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-247-3
Produkt ist nicht verfügbar
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FIN1108MTDX fin1108-d.pdf
FIN1108MTDX
Hersteller: onsemi
Description: IC REDRIVER LVDS 8CH 48TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Delay Time: 1.75ns
Number of Channels: 8
Mounting Type: Surface Mount
Output: LVDS
Type: Buffer, ReDriver
Input: LVDS, LVPECL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Applications: LVDS
Current - Supply: 80mA (Max)
Data Rate (Max): 800Mbps
Supplier Device Package: 48-TSSOP
Capacitance - Input: 3 pF
auf Bestellung 6600 Stücke:
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1000+4.71 EUR
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FIN1108MTD fin1108-d.pdf
FIN1108MTD
Hersteller: onsemi
Description: IC REDRIVER LVDS 8CH 48TSSOP
Capacitance - Input: 3 pF
Supplier Device Package: 48-TSSOP
Data Rate (Max): 800Mbps
Current - Supply: 80mA (Max)
Applications: LVDS
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Input: LVDS, LVPECL
Type: Buffer, ReDriver
Output: LVDS
Mounting Type: Surface Mount
Number of Channels: 8
Delay Time: 1.75ns
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Packaging: Tube
auf Bestellung 60 Stücke:
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AnzahlPrivatkunde
2+14.6 EUR
10+9.71 EUR
38+7.96 EUR
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