FQA62N25C
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Lieferzeit 21-28 Tag (e)
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Technische Details FQA62N25C
Description: MOSFET N-CH 250V 62A TO3PN, Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 25 V, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Drain to Source Voltage (Vdss): 250 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-3PN, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 298W (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 31A, 10V, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole.
Weitere Produktangebote FQA62N25C
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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FQA62N25C | onsemi |
Description: MOSFET N-CH 250V 62A TO3PN Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 25 V Package / Case: TO-3P-3, SC-65-3 Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-3PN Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 298W (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 31A, 10V Current - Continuous Drain (Id) @ 25°C: 62A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
FQA62N25C | onsemi / Fairchild |
MOSFET 250V N-Channel Adv Q-FET C-Series |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FQA62N25C |
|
Hersteller: onsemi
Description: MOSFET N-CH 250V 62A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 25 V
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 298W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Description: MOSFET N-CH 250V 62A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 25 V
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 298W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 31A, 10V
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQA62N25C |
|
Hersteller: onsemi / Fairchild
MOSFET 250V N-Channel Adv Q-FET C-Series
MOSFET 250V N-Channel Adv Q-FET C-Series
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH