FQA62N25C ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 16+ | 11.69 EUR |
| 19+ | 9.42 EUR |
| 25+ | 8.48 EUR |
| 100+ | 6.94 EUR |
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Technische Details FQA62N25C ON Semiconductor
Description: MOSFET N-CH 250V 62A TO3PN, Packaging: Tube, Package / Case: TO-3P-3, SC-65-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 31A, 10V, Power Dissipation (Max): 298W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-3PN, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 250 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 25 V.
Weitere Produktangebote FQA62N25C
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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FQA62N25C | onsemi |
 Description: MOSFET N-CH 250V 62A TO3PNPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 62A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 31A, 10V Power Dissipation (Max): 298W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3PN Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
FQA62N25C | onsemi / Fairchild |
MOSFET 250V N-Channel Adv Q-FET C-Series |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FQA62N25C |
|
Hersteller: onsemi
Description: MOSFET N-CH 250V 62A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 31A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 25 V
Description: MOSFET N-CH 250V 62A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 31A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQA62N25C |
|
Hersteller: onsemi / Fairchild
MOSFET 250V N-Channel Adv Q-FET C-Series
MOSFET 250V N-Channel Adv Q-FET C-Series
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH