Technische Details FQA47P06 FSC
Description: MOSFET P-CH 60V 55A TO3P, Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 214W (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 27.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube, Supplier Device Package: TO-3P.
Weitere Produktangebote FQA47P06
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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FQA47P06 | onsemi |
Description: MOSFET P-CH 60V 55A TO3PInput Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 27.5A, 10V Current - Continuous Drain (Id) @ 25°C: 55A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube Supplier Device Package: TO-3P |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FQA47P06 |
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Hersteller: onsemi
Description: MOSFET P-CH 60V 55A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 27.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Supplier Device Package: TO-3P
Description: MOSFET P-CH 60V 55A TO3P
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 27.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Supplier Device Package: TO-3P
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


