HGT1S10N120BNST
Produktcode: 213265
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Lieblingsprodukt
Hersteller:
Transistoren > Transistoren IGBT, Leistungsmodule
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Weitere Produktangebote HGT1S10N120BNST nach Preis ab 3.52 EUR bis 7.88 EUR
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HGT1S10N120BNST | onsemi |
Description: IGBT NPT 1200V 35A TO-263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A Supplier Device Package: TO-263 (D2Pak) IGBT Type: NPT Td (on/off) @ 25°C: 23ns/165ns Switching Energy: 320µJ (on), 800µJ (off) Test Condition: 960V, 10A, 10Ohm, 15V Gate Charge: 100 nC Part Status: Active Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 80 A Power - Max: 298 W |
auf Bestellung 121 Stücke: Lieferzeit 10-14 Tag (e) |
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HGT1S10N120BNST | onsemi / Fairchild |
IGBTs N-Channel IGBT NPT Series 1200V |
auf Bestellung 19460 Stücke: Lieferzeit 10-14 Tag (e) |
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| HGT1S10N120BNST |
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Hersteller: onsemi
Description: IGBT NPT 1200V 35A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/165ns
Switching Energy: 320µJ (on), 800µJ (off)
Test Condition: 960V, 10A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 298 W
Description: IGBT NPT 1200V 35A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/165ns
Switching Energy: 320µJ (on), 800µJ (off)
Test Condition: 960V, 10A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 298 W
auf Bestellung 121 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 7.78 EUR |
| 10+ | 5.17 EUR |
| 100+ | 3.7 EUR |
| HGT1S10N120BNST |
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Hersteller: onsemi / Fairchild
IGBTs N-Channel IGBT NPT Series 1200V
IGBTs N-Channel IGBT NPT Series 1200V
auf Bestellung 19460 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 7.88 EUR |
| 10+ | 5.24 EUR |
| 100+ | 3.75 EUR |
| 800+ | 3.73 EUR |
| 4800+ | 3.52 EUR |