| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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FDP8860 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 556A; 254W; TO220AB Mounting: THT Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: tube Case: TO220AB On-state resistance: 3.8mΩ Pulsed drain current: 556A Power dissipation: 254W Gate charge: 222nC Polarisation: unipolar Drain current: 80A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDS3992 | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 100V; 4.5A; 2.5W; SO8 Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.5A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 123mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2484 Stücke: Lieferzeit 14-21 Tag (e) |
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FDG6303N | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 25V; 500mA; Idm: 1.3A; 0.3W Type of transistor: N-MOSFET x2 Technology: DMOS Polarisation: unipolar Drain-source voltage: 25V Drain current: 0.5A Pulsed drain current: 1.3A Power dissipation: 0.3W Case: SC70-6; SC88; SOT363 On-state resistance: 770mΩ Mounting: SMD Gate charge: 2.3nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 3475 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP20N50 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 250W; TO220AB Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12.9A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| CAT34C02HU4IGT4A | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz Mounting: SMD Operating voltage: 1.7...5.5V Type of integrated circuit: EEPROM memory Operating temperature: -40...85°C Clock frequency: 400kHz Memory: 2kb EEPROM Kind of interface: serial Memory organisation: 256x8bit Kind of package: reel; tape Case: uDFN8 Interface: I2C Kind of memory: EEPROM Access time: 900ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| CAT25080HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz Mounting: SMD Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Operating temperature: -40...85°C Clock frequency: 20MHz Memory: 8kb EEPROM Kind of interface: serial Memory organisation: 1024x8bit Kind of package: reel; tape Case: uDFN8 Interface: SPI Kind of memory: EEPROM |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| CAT25010HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 1.8÷5.5V; 20MHz; uDFN8 Mounting: SMD Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Operating temperature: -40...85°C Clock frequency: 20MHz Memory: 1kb EEPROM Kind of interface: serial Memory organisation: 128x8bit Kind of package: reel; tape Case: uDFN8 Interface: SPI Kind of memory: EEPROM |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| CAT25020HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz; uDFN8 Mounting: SMD Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Operating temperature: -40...85°C Clock frequency: 20MHz Memory: 2kb EEPROM Kind of interface: serial Memory organisation: 256x8bit Kind of package: reel; tape Case: uDFN8 Interface: SPI Kind of memory: EEPROM |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| CAT25040HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; uDFN8 Mounting: SMD Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Operating temperature: -40...85°C Clock frequency: 20MHz Memory: 4kb EEPROM Kind of interface: serial Memory organisation: 512x8bit Kind of package: reel; tape Case: uDFN8 Interface: SPI Kind of memory: EEPROM |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| CAT25128HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz Mounting: SMD Operating temperature: -40...85°C Access time: 140ns Type of integrated circuit: EEPROM memory Clock frequency: 20MHz Memory: 128kb EEPROM Kind of interface: serial Memory organisation: 16kx8bit Kind of package: reel; tape Case: uDFN8 Interface: SPI Operating voltage: 1.8...5.5V Kind of memory: EEPROM |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| CAT25320HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 1.8÷5.5V; 10MHz; uDFN8 Mounting: SMD Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Operating temperature: -40...85°C Clock frequency: 10MHz Memory: 32kb EEPROM Kind of interface: serial Memory organisation: 4kx8bit Kind of package: reel; tape Case: uDFN8 Interface: SPI Kind of memory: EEPROM Access time: 40ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| CAT25640HU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ.Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; uDFN8 Mounting: SMD Operating voltage: 1.8...5.5V Type of integrated circuit: EEPROM memory Operating temperature: -40...85°C Clock frequency: 20MHz Memory: 64kb EEPROM Kind of interface: serial Memory organisation: 8kx8bit Kind of package: reel; tape Case: uDFN8 Interface: SPI Kind of memory: EEPROM Access time: 40ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FIN1215MTDX | ONSEMI |
Category: Interfaces others - integrated circuitsDescription: IC: interface; 595Mbps; LVTTL; LVDS; SMD; TSSOP48; IN: 21; 3÷3.6V Mounting: SMD Operating temperature: -40...85°C Data transfer rate: 595Mbps Technology: LVTTL Number of inputs: 21 Case: TSSOP48 Interface: LVDS Supply voltage: 3...3.6V Type of integrated circuit: interface |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MMSZ5243B | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 13V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxB |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMSZ5243BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 13V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SZMMSZ5243BT1G | ONSEMI |
Category: SMD Zener diodesDescription: Diode: Zener; 0.5W; 13V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 13V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxB Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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1N4148 | ONSEMI |
Category: THT universal diodesDescription: Diode: switching; THT; 100V; 0.2A; DO35; bulk,tape; Ufmax: 1V; 4ns Type of diode: switching Mounting: THT Max. off-state voltage: 0.1kV Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Case: DO35 Kind of package: bulk; tape Max. forward voltage: 1V Reverse recovery time: 4ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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LM358DG | ONSEMI |
Category: SMD operational amplifiersDescription: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8 Type of integrated circuit: operational amplifier Bandwidth: 1.1MHz Number of channels: dual; 2 Mounting: SMT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: SO8 Slew rate: 0.6V/μs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NCS199A2RSQT2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: instrumentation amplifier; 60kHz; Ch: 1; 2.2÷26VDC; SC70-6 Type of integrated circuit: instrumentation amplifier Bandwidth: 60kHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 2.2...26V DC Case: SC70-6 Operating temperature: -40...125°C Slew rate: 1V/μs Integrated circuit features: rail-to-rail output Gain: 100V/V Input offset voltage: 0.15mV Kind of package: reel; tape Input bias current: 60µA Input offset current: 100nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NCS199A3RSQT2G | ONSEMI |
Category: SMD operational amplifiersDescription: IC: instrumentation amplifier; 40kHz; Ch: 1; 2.2÷26VDC; SC70-6 Type of integrated circuit: instrumentation amplifier Bandwidth: 40kHz Number of channels: single; 1 Mounting: SMT Voltage supply range: 2.2...26V DC Case: SC70-6 Operating temperature: -40...125°C Slew rate: 1V/μs Integrated circuit features: rail-to-rail output Gain: 200V/V Input offset voltage: 0.15mV Kind of package: reel; tape Input bias current: 60µA Input offset current: 100nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NCV4274CST33T3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; SOT223; SMD Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: SOT223 Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Output current: 0.4A Application: automotive industry Output voltage: 3.3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NCV4274CDT50RKG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: DPAK Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Output current: 0.4A Application: automotive industry Output voltage: 5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NCV4274CDT33RKG | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; DPAK; SMD Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: DPAK Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Output current: 0.4A Application: automotive industry Output voltage: 3.3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NCV4274CST50T3G | ONSEMI |
Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; SOT223; SMD Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: SOT223 Kind of package: reel; tape Kind of voltage regulator: fixed; LDO; linear Output current: 0.4A Application: automotive industry Output voltage: 5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDS6679AZ | ONSEMI |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -13A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±25V On-state resistance: 14.8mΩ Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 85 Stücke: Lieferzeit 14-21 Tag (e) |
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FQD30N06TM | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 14.3A; Idm: 90.8A; 44W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 14.3A Pulsed drain current: 90.8A Power dissipation: 44W Case: DPAK Gate-source voltage: ±25V On-state resistance: 45mΩ Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1016 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP030N06B-F102 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 195A; Idm: 780A; 205W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 195A Pulsed drain current: 780A Power dissipation: 205W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| FDMS030N06B | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 400A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVTFWS030N06CTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 86A; 11W; WDFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 19A Pulsed drain current: 86A Power dissipation: 11W Case: WDFNW8 Gate-source voltage: ±20V On-state resistance: 29.7mΩ Mounting: SMD Gate charge: 4.7nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NTMFD030N06CT1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 19A Pulsed drain current: 63A Power dissipation: 11W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 29.7mΩ Mounting: SMD Gate charge: 4.7nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NTTFS030N06CTAG | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 86A; 11W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 19A Pulsed drain current: 86A Power dissipation: 11W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 29.7mΩ Mounting: SMD Gate charge: 4.7nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NVMFWD030N06CT1G | ONSEMI |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 19A Pulsed drain current: 63A Power dissipation: 11W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 29.7mΩ Mounting: SMD Gate charge: 4.7nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FCP165N60E | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 69A; 227W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Pulsed drain current: 69A Power dissipation: 227W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.165Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 57nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FCP165N65S3 | ONSEMI |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 47.5A; 154W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Pulsed drain current: 47.5A Power dissipation: 154W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.165Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 39nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NC7SZ02M5X | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOR; Ch: 1; IN: 2; SMD; SC74A; 1.65÷5.5VDC; -40÷85°C Mounting: SMD Supply voltage: 1.65...5.5V DC Kind of gate: NOR Type of integrated circuit: digital Operating temperature: -40...85°C Number of inputs: 2 Kind of package: reel; tape Case: SC74A Number of channels: single; 1 |
auf Bestellung 1448 Stücke: Lieferzeit 14-21 Tag (e) |
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NLV17SZ02DFT2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOR; Ch: 1; IN: 2; SMD; SC88A; 1.65÷5.5VDC; -55÷125°C Mounting: SMD Supply voltage: 1.65...5.5V DC Kind of gate: NOR Type of integrated circuit: digital Operating temperature: -55...125°C Quiescent current: 10µA Number of inputs: 2 Kind of package: reel; tape Case: SC88A Number of channels: single; 1 |
auf Bestellung 2645 Stücke: Lieferzeit 14-21 Tag (e) |
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| NL17SZ02DFT2G-Q | ONSEMI |
Category: Gates, invertersDescription: IC: digital Type of integrated circuit: digital |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NL17SZ02DFT2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital; NOR; Ch: 1; IN: 2; SMD; SC88A; 1.65÷5.5VDC; -55÷125°C Mounting: SMD Supply voltage: 1.65...5.5V DC Kind of gate: NOR Type of integrated circuit: digital Operating temperature: -55...125°C Number of inputs: 2 Kind of package: reel; tape Case: SC88A Number of channels: single; 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NL17SZ02XV5T2G | ONSEMI |
Category: Gates, invertersDescription: IC: digital Type of integrated circuit: digital |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| 2N7002T | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.073A; Idm: 800mA; 0.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.073A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: SOT523F Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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2N7002T | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.073A; Idm: 800mA; 0.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.073A Pulsed drain current: 0.8A Power dissipation: 0.2W Case: SOT523F Gate-source voltage: ±20V On-state resistance: 13.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMBD701LT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 70V; 10mA; reel,tape Case: SOT23 Mounting: SMD Max. forward voltage: 0.5V Max. off-state voltage: 70V Load current: 10mA Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Schottky switching |
auf Bestellung 1427 Stücke: Lieferzeit 14-21 Tag (e) |
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| ESD7016MUTAG | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 5.5V; bidirectional; uDFN10; Ch: 6; reel,tape Type of diode: TVS array Breakdown voltage: 5.5V Semiconductor structure: bidirectional Mounting: SMD Case: uDFN10 Max. off-state voltage: 5V Number of channels: 6 Application: USB Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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SMMBD701LT1G | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape Case: SOT23 Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Kind of package: reel; tape Semiconductor structure: single diode Type of diode: Schottky switching |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| SZESD7016MUTAG | ONSEMI |
Category: Protection diodes - arraysDescription: Diode: TVS array; 5.5V; bidirectional; uDFN10; Ch: 6; reel,tape Type of diode: TVS array Breakdown voltage: 5.5V Semiconductor structure: bidirectional Mounting: SMD Case: uDFN10 Max. off-state voltage: 5V Number of channels: 6 Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| FOD814A300W | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler Type of optocoupler: optocoupler |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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| FOD814S | ONSEMI |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV Collector-emitter voltage: 70V Case: SMD4 Collector current: 50mA Number of pins: 4 Turn-on time: 18µs Turn-off time: 18µs Max. off-state voltage: 6V |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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FIN1048MX | ONSEMI |
Category: Interfaces others - integrated circuitsDescription: IC: digital; line receiver,differential,translator; LVDS; SMD Type of integrated circuit: digital Kind of integrated circuit: differential; line receiver; translator Technology: LVDS Supply voltage: 3...3.6V DC Mounting: SMD Case: SO16 Operating temperature: -40...85°C Number of channels: 4 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FIN1048MTCX | ONSEMI |
Category: Interfaces others - integrated circuitsDescription: IC: digital; line receiver,differential,translator; LVDS; SMD Type of integrated circuit: digital Kind of integrated circuit: differential; line receiver; translator Technology: LVDS Supply voltage: 3...3.6V DC Mounting: SMD Case: TSSOP16 Operating temperature: -40...85°C Number of channels: 4 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MBR30H100CTG | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.8V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 0.1kV Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.8V Max. load current: 30A Max. forward impulse current: 250A Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MBR30H30CTG | ONSEMI |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 30V; 15Ax2; TO220AB; Ufmax: 0.53V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 30V Load current: 15A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.53V Max. load current: 30A Max. forward impulse current: 260A Kind of package: tube Heatsink thickness: 1.15...1.41mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SS14 | ONSEMI |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 40A Kind of package: reel; tape |
auf Bestellung 1130 Stücke: Lieferzeit 14-21 Tag (e) |
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74LCX16244MTD | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 16; CMOS; SMD Manufacturer series: LCX Operating temperature: -40...85°C Quiescent current: 20µA Case: TSSOP48 Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 16 Part status: Not recommended for new designs Mounting: SMD Supply voltage: 2...3.6V DC Type of integrated circuit: digital Kind of output: 3-state Technology: CMOS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| 74LCX16244MTDX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 16; CMOS; SMD Manufacturer series: LCX Operating temperature: -40...85°C Quiescent current: 20µA Kind of package: reel; tape Case: TSSOP48 Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 16 Mounting: SMD Supply voltage: 2...3.6V DC Type of integrated circuit: digital Kind of output: 3-state Technology: CMOS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| M74LCX16244DTR2G | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX Manufacturer series: LCX Operating temperature: -40...85°C Case: TSSOP48 Kind of integrated circuit: buffer; line driver; non-inverting Number of channels: 16 Mounting: SMD Supply voltage: 2...3.6V DC Type of integrated circuit: digital Kind of output: 3-state |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| D-LED-B-GEVK | ONSEMI |
Category: Development kits - othersDescription: Expansion board; prototype board; Comp: NCV78763 Interface: I2C; I2C - Slave; SPI Kit contents: prototype board Connection: pin strips; screw development kits accessories features: Arduino Shield compatible Type of accessories for development kits: expansion board Components: NCV78763 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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CPH3910-TL-E | ONSEMI |
Category: SMD N channel transistorsDescription: Transistor: N-JFET; unipolar; 25V; 20mA; 0.4W; CPH3; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 25V Drain current: 20mA Power dissipation: 0.4W Case: CPH3 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCP1234BD100R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: -0.5...0.5A Frequency: 92...108kHz Mounting: SMD Case: SO7 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 9.5...26.5V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NCP1234BD65R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuitsDescription: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: -0.5...0.5A Frequency: 60...70kHz Mounting: SMD Case: SO7 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 9.5...26.5V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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74ACT245MTCX | ONSEMI |
Category: Buffers, transceivers, driversDescription: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; ACT Operating temperature: -40...85°C Kind of output: 3-state Technology: CMOS; TTL Quiescent current: 40µA Kind of package: reel; tape Case: TSSOP20 Kind of integrated circuit: bidirectional; transceiver Number of channels: 8 Mounting: SMD Supply voltage: 4.5...5.5V DC Manufacturer series: ACT Type of integrated circuit: digital |
auf Bestellung 1169 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDP8860 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 556A; 254W; TO220AB
Mounting: THT
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 3.8mΩ
Pulsed drain current: 556A
Power dissipation: 254W
Gate charge: 222nC
Polarisation: unipolar
Drain current: 80A
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 556A; 254W; TO220AB
Mounting: THT
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
Case: TO220AB
On-state resistance: 3.8mΩ
Pulsed drain current: 556A
Power dissipation: 254W
Gate charge: 222nC
Polarisation: unipolar
Drain current: 80A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDS3992 |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 4.5A; 2.5W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 123mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 4.5A; 2.5W; SO8
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 123mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2484 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 31+ | 2.81 EUR |
| 40+ | 2.18 EUR |
| 45+ | 1.9 EUR |
| 100+ | 1.23 EUR |
| 250+ | 1.18 EUR |
| FDG6303N |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 500mA; Idm: 1.3A; 0.3W
Type of transistor: N-MOSFET x2
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.5A
Pulsed drain current: 1.3A
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
On-state resistance: 770mΩ
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 25V; 500mA; Idm: 1.3A; 0.3W
Type of transistor: N-MOSFET x2
Technology: DMOS
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 0.5A
Pulsed drain current: 1.3A
Power dissipation: 0.3W
Case: SC70-6; SC88; SOT363
On-state resistance: 770mΩ
Mounting: SMD
Gate charge: 2.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 3475 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 200+ | 0.43 EUR |
| 242+ | 0.36 EUR |
| 268+ | 0.32 EUR |
| 296+ | 0.29 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.21 EUR |
| 1500+ | 0.19 EUR |
| 3000+ | 0.17 EUR |
| FDP20N50 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12.9A; 250W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12.9A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT34C02HU4IGT4A |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz
Mounting: SMD
Operating voltage: 1.7...5.5V
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 400kHz
Memory: 2kb EEPROM
Kind of interface: serial
Memory organisation: 256x8bit
Kind of package: reel; tape
Case: uDFN8
Interface: I2C
Kind of memory: EEPROM
Access time: 900ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; I2C; 256x8bit; 1.7÷5.5V; 400kHz
Mounting: SMD
Operating voltage: 1.7...5.5V
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 400kHz
Memory: 2kb EEPROM
Kind of interface: serial
Memory organisation: 256x8bit
Kind of package: reel; tape
Case: uDFN8
Interface: I2C
Kind of memory: EEPROM
Access time: 900ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT25080HU4I-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 8kb EEPROM
Kind of interface: serial
Memory organisation: 1024x8bit
Kind of package: reel; tape
Case: uDFN8
Interface: SPI
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 8kbEEPROM; SPI; 1024x8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 8kb EEPROM
Kind of interface: serial
Memory organisation: 1024x8bit
Kind of package: reel; tape
Case: uDFN8
Interface: SPI
Kind of memory: EEPROM
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CAT25010HU4I-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 1.8÷5.5V; 20MHz; uDFN8
Mounting: SMD
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 1kb EEPROM
Kind of interface: serial
Memory organisation: 128x8bit
Kind of package: reel; tape
Case: uDFN8
Interface: SPI
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; SPI; 128x8bit; 1.8÷5.5V; 20MHz; uDFN8
Mounting: SMD
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 1kb EEPROM
Kind of interface: serial
Memory organisation: 128x8bit
Kind of package: reel; tape
Case: uDFN8
Interface: SPI
Kind of memory: EEPROM
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CAT25020HU4I-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz; uDFN8
Mounting: SMD
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 2kb EEPROM
Kind of interface: serial
Memory organisation: 256x8bit
Kind of package: reel; tape
Case: uDFN8
Interface: SPI
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 1.8÷5.5V; 20MHz; uDFN8
Mounting: SMD
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 2kb EEPROM
Kind of interface: serial
Memory organisation: 256x8bit
Kind of package: reel; tape
Case: uDFN8
Interface: SPI
Kind of memory: EEPROM
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CAT25040HU4I-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; uDFN8
Mounting: SMD
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 4kb EEPROM
Kind of interface: serial
Memory organisation: 512x8bit
Kind of package: reel; tape
Case: uDFN8
Interface: SPI
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; uDFN8
Mounting: SMD
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 4kb EEPROM
Kind of interface: serial
Memory organisation: 512x8bit
Kind of package: reel; tape
Case: uDFN8
Interface: SPI
Kind of memory: EEPROM
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CAT25128HU4I-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Access time: 140ns
Type of integrated circuit: EEPROM memory
Clock frequency: 20MHz
Memory: 128kb EEPROM
Kind of interface: serial
Memory organisation: 16kx8bit
Kind of package: reel; tape
Case: uDFN8
Interface: SPI
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Mounting: SMD
Operating temperature: -40...85°C
Access time: 140ns
Type of integrated circuit: EEPROM memory
Clock frequency: 20MHz
Memory: 128kb EEPROM
Kind of interface: serial
Memory organisation: 16kx8bit
Kind of package: reel; tape
Case: uDFN8
Interface: SPI
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CAT25320HU4I-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 1.8÷5.5V; 10MHz; uDFN8
Mounting: SMD
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 10MHz
Memory: 32kb EEPROM
Kind of interface: serial
Memory organisation: 4kx8bit
Kind of package: reel; tape
Case: uDFN8
Interface: SPI
Kind of memory: EEPROM
Access time: 40ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 32kbEEPROM; SPI; 4kx8bit; 1.8÷5.5V; 10MHz; uDFN8
Mounting: SMD
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 10MHz
Memory: 32kb EEPROM
Kind of interface: serial
Memory organisation: 4kx8bit
Kind of package: reel; tape
Case: uDFN8
Interface: SPI
Kind of memory: EEPROM
Access time: 40ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| CAT25640HU4I-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; uDFN8
Mounting: SMD
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 64kb EEPROM
Kind of interface: serial
Memory organisation: 8kx8bit
Kind of package: reel; tape
Case: uDFN8
Interface: SPI
Kind of memory: EEPROM
Access time: 40ns
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; SPI; 8kx8bit; 1.8÷5.5V; 20MHz; uDFN8
Mounting: SMD
Operating voltage: 1.8...5.5V
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 20MHz
Memory: 64kb EEPROM
Kind of interface: serial
Memory organisation: 8kx8bit
Kind of package: reel; tape
Case: uDFN8
Interface: SPI
Kind of memory: EEPROM
Access time: 40ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FIN1215MTDX |
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Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; 595Mbps; LVTTL; LVDS; SMD; TSSOP48; IN: 21; 3÷3.6V
Mounting: SMD
Operating temperature: -40...85°C
Data transfer rate: 595Mbps
Technology: LVTTL
Number of inputs: 21
Case: TSSOP48
Interface: LVDS
Supply voltage: 3...3.6V
Type of integrated circuit: interface
Category: Interfaces others - integrated circuits
Description: IC: interface; 595Mbps; LVTTL; LVDS; SMD; TSSOP48; IN: 21; 3÷3.6V
Mounting: SMD
Operating temperature: -40...85°C
Data transfer rate: 595Mbps
Technology: LVTTL
Number of inputs: 21
Case: TSSOP48
Interface: LVDS
Supply voltage: 3...3.6V
Type of integrated circuit: interface
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MMSZ5243B |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MMSZ5243BT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZMMSZ5243BT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 13V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
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| 1N4148 |
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Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; DO35; bulk,tape; Ufmax: 1V; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DO35
Kind of package: bulk; tape
Max. forward voltage: 1V
Reverse recovery time: 4ns
Category: THT universal diodes
Description: Diode: switching; THT; 100V; 0.2A; DO35; bulk,tape; Ufmax: 1V; 4ns
Type of diode: switching
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DO35
Kind of package: bulk; tape
Max. forward voltage: 1V
Reverse recovery time: 4ns
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| LM358DG |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Slew rate: 0.6V/μs
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; ±1.5÷16VDC,3÷32VDC; SO8
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Number of channels: dual; 2
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO8
Slew rate: 0.6V/μs
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| NCS199A2RSQT2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 60kHz; Ch: 1; 2.2÷26VDC; SC70-6
Type of integrated circuit: instrumentation amplifier
Bandwidth: 60kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.2...26V DC
Case: SC70-6
Operating temperature: -40...125°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail output
Gain: 100V/V
Input offset voltage: 0.15mV
Kind of package: reel; tape
Input bias current: 60µA
Input offset current: 100nA
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 60kHz; Ch: 1; 2.2÷26VDC; SC70-6
Type of integrated circuit: instrumentation amplifier
Bandwidth: 60kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.2...26V DC
Case: SC70-6
Operating temperature: -40...125°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail output
Gain: 100V/V
Input offset voltage: 0.15mV
Kind of package: reel; tape
Input bias current: 60µA
Input offset current: 100nA
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| NCS199A3RSQT2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 40kHz; Ch: 1; 2.2÷26VDC; SC70-6
Type of integrated circuit: instrumentation amplifier
Bandwidth: 40kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.2...26V DC
Case: SC70-6
Operating temperature: -40...125°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail output
Gain: 200V/V
Input offset voltage: 0.15mV
Kind of package: reel; tape
Input bias current: 60µA
Input offset current: 100nA
Category: SMD operational amplifiers
Description: IC: instrumentation amplifier; 40kHz; Ch: 1; 2.2÷26VDC; SC70-6
Type of integrated circuit: instrumentation amplifier
Bandwidth: 40kHz
Number of channels: single; 1
Mounting: SMT
Voltage supply range: 2.2...26V DC
Case: SC70-6
Operating temperature: -40...125°C
Slew rate: 1V/μs
Integrated circuit features: rail-to-rail output
Gain: 200V/V
Input offset voltage: 0.15mV
Kind of package: reel; tape
Input bias current: 60µA
Input offset current: 100nA
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| NCV4274CST33T3G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; SOT223; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.4A
Application: automotive industry
Output voltage: 3.3V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; SOT223; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.4A
Application: automotive industry
Output voltage: 3.3V
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| NCV4274CDT50RKG |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.4A
Application: automotive industry
Output voltage: 5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.4A
Application: automotive industry
Output voltage: 5V
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| NCV4274CDT33RKG |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; DPAK; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.4A
Application: automotive industry
Output voltage: 3.3V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; DPAK; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: DPAK
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.4A
Application: automotive industry
Output voltage: 3.3V
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| NCV4274CST50T3G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; SOT223; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.4A
Application: automotive industry
Output voltage: 5V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; SOT223; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Kind of voltage regulator: fixed; LDO; linear
Output current: 0.4A
Application: automotive industry
Output voltage: 5V
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| FDS6679AZ |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -13A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 14.8mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -13A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -13A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 14.8mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 44+ | 1.94 EUR |
| 57+ | 1.5 EUR |
| 66+ | 1.3 EUR |
| 85+ | 1 EUR |
| FQD30N06TM |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.3A; Idm: 90.8A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14.3A
Pulsed drain current: 90.8A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14.3A; Idm: 90.8A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 14.3A
Pulsed drain current: 90.8A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1016 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 82+ | 1.04 EUR |
| 101+ | 0.84 EUR |
| 500+ | 0.73 EUR |
| FDP030N06B-F102 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; Idm: 780A; 205W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Pulsed drain current: 780A
Power dissipation: 205W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 195A; Idm: 780A; 205W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 195A
Pulsed drain current: 780A
Power dissipation: 205W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
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| FDMS030N06B |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVTFWS030N06CTAG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 86A; 11W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 86A
Power dissipation: 11W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 86A; 11W; WDFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 86A
Power dissipation: 11W
Case: WDFNW8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTMFD030N06CT1G |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 63A
Power dissipation: 11W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 63A
Power dissipation: 11W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NTTFS030N06CTAG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 86A; 11W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 86A
Power dissipation: 11W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 19A; Idm: 86A; 11W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 86A
Power dissipation: 11W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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| NVMFWD030N06CT1G |
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Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 63A
Power dissipation: 11W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 63A
Power dissipation: 11W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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| FCP165N60E |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 69A; 227W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 69A
Power dissipation: 227W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 57nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 23A; Idm: 69A; 227W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 23A
Pulsed drain current: 69A
Power dissipation: 227W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 57nC
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| FCP165N65S3 |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 47.5A; 154W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 47.5A
Power dissipation: 154W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 39nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 47.5A; 154W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Pulsed drain current: 47.5A
Power dissipation: 154W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 39nC
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| NC7SZ02M5X |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; SMD; SC74A; 1.65÷5.5VDC; -40÷85°C
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of gate: NOR
Type of integrated circuit: digital
Operating temperature: -40...85°C
Number of inputs: 2
Kind of package: reel; tape
Case: SC74A
Number of channels: single; 1
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; SMD; SC74A; 1.65÷5.5VDC; -40÷85°C
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of gate: NOR
Type of integrated circuit: digital
Operating temperature: -40...85°C
Number of inputs: 2
Kind of package: reel; tape
Case: SC74A
Number of channels: single; 1
auf Bestellung 1448 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 455+ | 0.19 EUR |
| 575+ | 0.14 EUR |
| NLV17SZ02DFT2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; SMD; SC88A; 1.65÷5.5VDC; -55÷125°C
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of gate: NOR
Type of integrated circuit: digital
Operating temperature: -55...125°C
Quiescent current: 10µA
Number of inputs: 2
Kind of package: reel; tape
Case: SC88A
Number of channels: single; 1
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; SMD; SC88A; 1.65÷5.5VDC; -55÷125°C
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of gate: NOR
Type of integrated circuit: digital
Operating temperature: -55...125°C
Quiescent current: 10µA
Number of inputs: 2
Kind of package: reel; tape
Case: SC88A
Number of channels: single; 1
auf Bestellung 2645 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 320+ | 0.27 EUR |
| 410+ | 0.21 EUR |
| 520+ | 0.17 EUR |
| 815+ | 0.1 EUR |
| NL17SZ02DFT2G-Q |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| NL17SZ02DFT2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; SMD; SC88A; 1.65÷5.5VDC; -55÷125°C
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of gate: NOR
Type of integrated circuit: digital
Operating temperature: -55...125°C
Number of inputs: 2
Kind of package: reel; tape
Case: SC88A
Number of channels: single; 1
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 1; IN: 2; SMD; SC88A; 1.65÷5.5VDC; -55÷125°C
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of gate: NOR
Type of integrated circuit: digital
Operating temperature: -55...125°C
Number of inputs: 2
Kind of package: reel; tape
Case: SC88A
Number of channels: single; 1
Produkt ist nicht verfügbar
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| NL17SZ02XV5T2G |
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Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Category: Gates, inverters
Description: IC: digital
Type of integrated circuit: digital
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| 2N7002T |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.073A; Idm: 800mA; 0.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.073A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT523F
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.073A; Idm: 800mA; 0.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.073A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT523F
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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| 2N7002T |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.073A; Idm: 800mA; 0.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.073A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT523F
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.073A; Idm: 800mA; 0.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.073A
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Case: SOT523F
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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| MMBD701LT1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 10mA; reel,tape
Case: SOT23
Mounting: SMD
Max. forward voltage: 0.5V
Max. off-state voltage: 70V
Load current: 10mA
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 10mA; reel,tape
Case: SOT23
Mounting: SMD
Max. forward voltage: 0.5V
Max. off-state voltage: 70V
Load current: 10mA
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky switching
auf Bestellung 1427 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 715+ | 0.12 EUR |
| 1087+ | 0.079 EUR |
| ESD7016MUTAG |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; bidirectional; uDFN10; Ch: 6; reel,tape
Type of diode: TVS array
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 5V
Number of channels: 6
Application: USB
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; bidirectional; uDFN10; Ch: 6; reel,tape
Type of diode: TVS array
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 5V
Number of channels: 6
Application: USB
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| SMMBD701LT1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky switching
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT23; SMD; 70V; 0.2A; reel,tape
Case: SOT23
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Type of diode: Schottky switching
Produkt ist nicht verfügbar
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| SZESD7016MUTAG |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; bidirectional; uDFN10; Ch: 6; reel,tape
Type of diode: TVS array
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 5V
Number of channels: 6
Application: automotive industry
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.5V; bidirectional; uDFN10; Ch: 6; reel,tape
Type of diode: TVS array
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Mounting: SMD
Case: uDFN10
Max. off-state voltage: 5V
Number of channels: 6
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| FOD814A300W |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.2 EUR |
| FOD814S |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 70V
Case: SMD4
Collector current: 50mA
Number of pins: 4
Turn-on time: 18µs
Turn-off time: 18µs
Max. off-state voltage: 6V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
Collector-emitter voltage: 70V
Case: SMD4
Collector current: 50mA
Number of pins: 4
Turn-on time: 18µs
Turn-off time: 18µs
Max. off-state voltage: 6V
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.19 EUR |
| FIN1048MX |
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Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; line receiver,differential,translator; LVDS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: differential; line receiver; translator
Technology: LVDS
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Number of channels: 4
Kind of package: reel; tape
Category: Interfaces others - integrated circuits
Description: IC: digital; line receiver,differential,translator; LVDS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: differential; line receiver; translator
Technology: LVDS
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Number of channels: 4
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| FIN1048MTCX |
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Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: digital; line receiver,differential,translator; LVDS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: differential; line receiver; translator
Technology: LVDS
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...85°C
Number of channels: 4
Category: Interfaces others - integrated circuits
Description: IC: digital; line receiver,differential,translator; LVDS; SMD
Type of integrated circuit: digital
Kind of integrated circuit: differential; line receiver; translator
Technology: LVDS
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...85°C
Number of channels: 4
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| MBR30H100CTG |
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Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.8V
Max. load current: 30A
Max. forward impulse current: 250A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.8V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 0.1kV
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.8V
Max. load current: 30A
Max. forward impulse current: 250A
Kind of package: tube
Produkt ist nicht verfügbar
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| MBR30H30CTG |
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Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 15Ax2; TO220AB; Ufmax: 0.53V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.53V
Max. load current: 30A
Max. forward impulse current: 260A
Kind of package: tube
Heatsink thickness: 1.15...1.41mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 30V; 15Ax2; TO220AB; Ufmax: 0.53V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 30V
Load current: 15A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.53V
Max. load current: 30A
Max. forward impulse current: 260A
Kind of package: tube
Heatsink thickness: 1.15...1.41mm
Produkt ist nicht verfügbar
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| SS14 |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: reel; tape
auf Bestellung 1130 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 200+ | 0.43 EUR |
| 269+ | 0.32 EUR |
| 305+ | 0.27 EUR |
| 407+ | 0.21 EUR |
| 455+ | 0.19 EUR |
| 532+ | 0.15 EUR |
| 596+ | 0.14 EUR |
| 1000+ | 0.13 EUR |
| 74LCX16244MTD |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; CMOS; SMD
Manufacturer series: LCX
Operating temperature: -40...85°C
Quiescent current: 20µA
Case: TSSOP48
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 16
Part status: Not recommended for new designs
Mounting: SMD
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Kind of output: 3-state
Technology: CMOS
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; CMOS; SMD
Manufacturer series: LCX
Operating temperature: -40...85°C
Quiescent current: 20µA
Case: TSSOP48
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 16
Part status: Not recommended for new designs
Mounting: SMD
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Kind of output: 3-state
Technology: CMOS
Produkt ist nicht verfügbar
Mindestbestellmenge: 3800 Stücke
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| 74LCX16244MTDX |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; CMOS; SMD
Manufacturer series: LCX
Operating temperature: -40...85°C
Quiescent current: 20µA
Kind of package: reel; tape
Case: TSSOP48
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 16
Mounting: SMD
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Kind of output: 3-state
Technology: CMOS
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; CMOS; SMD
Manufacturer series: LCX
Operating temperature: -40...85°C
Quiescent current: 20µA
Kind of package: reel; tape
Case: TSSOP48
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 16
Mounting: SMD
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Kind of output: 3-state
Technology: CMOS
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| M74LCX16244DTR2G |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX
Manufacturer series: LCX
Operating temperature: -40...85°C
Case: TSSOP48
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 16
Mounting: SMD
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; LCX
Manufacturer series: LCX
Operating temperature: -40...85°C
Case: TSSOP48
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 16
Mounting: SMD
Supply voltage: 2...3.6V DC
Type of integrated circuit: digital
Kind of output: 3-state
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| D-LED-B-GEVK |
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Hersteller: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board; Comp: NCV78763
Interface: I2C; I2C - Slave; SPI
Kit contents: prototype board
Connection: pin strips; screw
development kits accessories features: Arduino Shield compatible
Type of accessories for development kits: expansion board
Components: NCV78763
Category: Development kits - others
Description: Expansion board; prototype board; Comp: NCV78763
Interface: I2C; I2C - Slave; SPI
Kit contents: prototype board
Connection: pin strips; screw
development kits accessories features: Arduino Shield compatible
Type of accessories for development kits: expansion board
Components: NCV78763
Produkt ist nicht verfügbar
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| CPH3910-TL-E |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 20mA; 0.4W; CPH3; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 20mA
Power dissipation: 0.4W
Case: CPH3
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 25V; 20mA; 0.4W; CPH3; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 20mA
Power dissipation: 0.4W
Case: CPH3
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 91+ | 0.94 EUR |
| 136+ | 0.63 EUR |
| 193+ | 0.44 EUR |
| 223+ | 0.38 EUR |
| 268+ | 0.32 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.25 EUR |
| 1500+ | 0.24 EUR |
| NCP1234BD100R2G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 92...108kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...26.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 92...108kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...26.5V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| NCP1234BD65R2G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 60...70kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...26.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: -0.5...0.5A
Frequency: 60...70kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9.5...26.5V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
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| 74ACT245MTCX |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; ACT
Operating temperature: -40...85°C
Kind of output: 3-state
Technology: CMOS; TTL
Quiescent current: 40µA
Kind of package: reel; tape
Case: TSSOP20
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Type of integrated circuit: digital
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; CMOS,TTL; SMD; ACT
Operating temperature: -40...85°C
Kind of output: 3-state
Technology: CMOS; TTL
Quiescent current: 40µA
Kind of package: reel; tape
Case: TSSOP20
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Type of integrated circuit: digital
auf Bestellung 1169 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 82+ | 1.04 EUR |
| 115+ | 0.74 EUR |
| 128+ | 0.67 EUR |
| 146+ | 0.58 EUR |
| 250+ | 0.55 EUR |
| 500+ | 0.52 EUR |


























