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MM5Z4703T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CA4F3F20D700D8&compId=MM5Z4xxxT1G.PDF?ci_sign=ebf57ef151ccd1a797560830f787da2551b0304f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD523F; single diode
Mounting: SMD
Tolerance: ±5%
Zener voltage: 16V
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MM5Z4xxxT1G
Case: SOD523F
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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NCP12700ADNR2G ONSEMI NCP12700-D.PDF ncp12700-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1÷2.8A; 185÷1000kHz
Type of integrated circuit: PMIC
Case: MSOP10
Mounting: SMD
Operating voltage: 9...28V DC
Frequency: 185...1000kHz
Output current: 1...2.8A
Number of channels: 1
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback; forward
Operating temperature: -40...125°C
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NCP12700BDNR2G ONSEMI ncp12700-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1÷2.8A; 185÷1000kHz
Type of integrated circuit: PMIC
Case: MSOP10
Mounting: SMD
Operating voltage: 9...28V DC
Frequency: 185...1000kHz
Output current: 1...2.8A
Number of channels: 1
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback; forward
Operating temperature: -40...125°C
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NCP12700BMTTXG ONSEMI ncp12700-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1÷2.8A; 185÷1000kHz
Type of integrated circuit: PMIC
Case: WQFN10
Mounting: SMD
Operating voltage: 9...28V DC
Frequency: 185...1000kHz
Output current: 1...2.8A
Number of channels: 1
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback; forward
Operating temperature: -40...125°C
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74ACT139MTC 74ACT139MTC ONSEMI ONSM-S-A0003589990-1.pdf?t.download=true&u=5oefqw FAIRS01311-1.pdf?t.download=true&u=5oefqw Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; SMD; TSSOP16; ACT; tube
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Mounting: SMD
Case: TSSOP16
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 40µA
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74ACT139MTCX 74ACT139MTCX ONSEMI ONSM-S-A0003589990-1.pdf?t.download=true&u=5oefqw Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; SMD; TSSOP16; ACT; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Mounting: SMD
Case: TSSOP16
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Produkt ist nicht verfügbar
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74ACT139SCX 74ACT139SCX ONSEMI ONSM-S-A0003589990-1.pdf?t.download=true&u=5oefqw Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; SMD; SO16; ACT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Mounting: SMD
Case: SO16
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
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MC74ACT139DR2G MC74ACT139DR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62926CB2180D3&compId=MC74AC139-D.pdf?ci_sign=dfe7d7c26b85033f3926b44d0bcc2bfc05326ffb Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Technology: TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: ACT
Family: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
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MC74ACT139DTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E629A14A1F40D3&compId=MC74AC139-D.pdf?ci_sign=07013f6e023c3daaa0cf3444f2b8a06486f4ecb3 Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Technology: TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: ACT
Family: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MC74AC139DG MC74AC139DG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E628647BDC20D3&compId=MC74AC139-D.pdf?ci_sign=44d07ee4d0082ace8496956767c7b8131c023fd2 Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; CMOS; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: AC
Family: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
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MC74AC139DR2G MC74AC139DR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E628647BDD60D3&compId=MC74AC139-D.pdf?ci_sign=7627523ecf7ca8c9c7ed4c5e30208ee40feb2bbb Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; CMOS; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: AC
Family: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MC74AC139DTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E628647BDEA0D3&compId=MC74AC139-D.pdf?ci_sign=2241251693d938b54ad9a376a7a6a575f544325d Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: AC
Family: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FDBL0150N60 ONSEMI fdbl0150n60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MMBZ5241BLT1G MMBZ5241BLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 2µA
Manufacturer series: MMBZ52xxBLT1G
auf Bestellung 2948 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
569+0.13 EUR
705+0.1 EUR
1749+0.041 EUR
2763+0.026 EUR
2948+0.024 EUR
Mindestbestellmenge: 455
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FCD7N60TM-WS ONSEMI fcd7n60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
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FCI7N60 ONSEMI fci7n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 83W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCH47N60F-F133
+1
 		FCH47N60F-F133 ONSEMI fch47n60f-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 141A
Power dissipation: 417W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
6+12.2 EUR
7+11.53 EUR
Mindestbestellmenge: 6
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FDC3601N FDC3601N ONSEMI fdc3601n-d.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 976mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
81+0.89 EUR
109+0.66 EUR
206+0.35 EUR
218+0.33 EUR
1000+0.32 EUR
Mindestbestellmenge: 81
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FDC3612 FDC3612 ONSEMI fdc3612-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2998 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
132+0.54 EUR
194+0.37 EUR
205+0.35 EUR
500+0.34 EUR
Mindestbestellmenge: 120
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SBAS21LT1G
+1
 		SBAS21LT1G ONSEMI bas19lt1-d.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.385W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NSVRB751V40T1G ONSEMI rb751v40t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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CAT25256XI-T2 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C7FB610C0D5&compId=CAT25256-D.pdf?ci_sign=1e17818f9e22c5bfe7ff8e0e9edeffa2ceb4c1b2 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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CAT25256YI-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C7FB61200D5&compId=CAT25256-D.pdf?ci_sign=b5de27d053465c00870ea708b3f135c1cf623e7f Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NCP785AH120T1G NCP785AH120T1G ONSEMI ncp785a-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 1.2V; 10mA; SOT89; SMD; ±5%
Mounting: SMD
Number of channels: 1
Case: SOT89
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 10mA
Output voltage: 1.2V
Tolerance: ±5%
Input voltage: 25...450V
Kind of voltage regulator: fixed; linear
Manufacturer series: NCP785A
Produkt ist nicht verfügbar
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FDBL0240N100 ONSEMI fdbl0240n100-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 210A; Idm: 910A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 210A
Pulsed drain current: 910A
Power dissipation: 300W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 79nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MBR1080G MBR1080G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE584EB2D97610C6469&compId=MBR10100G.PDF?ci_sign=8305eeba20bae50309cbee4af22988a5e815f9f7 Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 10A; TO220AC; Ufmax: 0.85V
Kind of package: tube
Semiconductor structure: single diode
Case: TO220AC
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.85V
Load current: 10A
Max. load current: 20A
Max. forward impulse current: 150A
Max. off-state voltage: 80V
Produkt ist nicht verfügbar
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NCV3843BVD1R2G ONSEMI ncv3843bv-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 702mW
Application: automotive industry
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NCV3843BVDR2G ONSEMI ncv3843bv-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 862mW
Application: automotive industry
Produkt ist nicht verfügbar
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BC818-40LT1G BC818-40LT1G ONSEMI bc818-40lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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NTR4003NT1G NTR4003NT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868A3582F9A20745&compId=NTR4003N.PDF?ci_sign=b3216589411edabf78a677fe51c768f1946900ff Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.56A; 0.69W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.56A
Power dissipation: 0.69W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.15nC
auf Bestellung 5720 Stücke:
Lieferzeit 14-21 Tag (e)
837+0.086 EUR
1819+0.039 EUR
1924+0.037 EUR
Mindestbestellmenge: 837
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FDD8444 ONSEMI fdd8444-d.pdf FAIR-S-A0002365728-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 153W; DPAK
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 89nC
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 153W
Drain current: 50A
Case: DPAK
Kind of channel: enhancement
Produkt ist nicht verfügbar
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KSB1366GTU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE346BD9676E0D6&compId=KSB1366.pdf?ci_sign=9786bd7aefb0b39ddb33dc6e5719baf70af36f5e Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 2W; TO220FP
Mounting: THT
Type of transistor: PNP
Power dissipation: 2W
Collector current: 3A
Collector-emitter voltage: 60V
Current gain: 150...320
Frequency: 9MHz
Kind of package: tube
Polarisation: bipolar
Case: TO220FP
Produkt ist nicht verfügbar
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FDT1600N10ALZ FDT1600N10ALZ ONSEMI fdt1600n10alz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; 10.42W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 3.5A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 10.42W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 2602 Stücke:
Lieferzeit 14-21 Tag (e)
73+0.99 EUR
98+0.73 EUR
113+0.63 EUR
143+0.5 EUR
152+0.47 EUR
250+0.45 EUR
Mindestbestellmenge: 73
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FDB0260N1007L ONSEMI fdb0260n1007l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1100A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 1100A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 84nC
Kind of channel: enhancement
Kind of package: reel; tape
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FDBL0260N100 ONSEMI fdbl0260n100-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1000A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 1kA
Power dissipation: 250W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 83nC
Kind of channel: enhancement
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FCMT199N60 ONSEMI fcmt199n60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 208W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60.6A
Gate charge: 57nC
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FCD620N60ZF ONSEMI fcd620n60zf-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; Idm: 21.9A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 620mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 20nC
Pulsed drain current: 21.9A
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SZNUP2124MXWTBG ONSEMI sznup2124-d.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 26÷33V; bidirectional; XDFNW3; reel,tape
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Breakdown voltage: 26...33V
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS
Case: XDFNW3
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FDMC86259P ONSEMI fdmc86259p-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; Idm: -20A; 62W; Power33
Drain-source voltage: -150V
Drain current: -13A
On-state resistance: 178mΩ
Type of transistor: P-MOSFET
Power dissipation: 62W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 32nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -20A
Mounting: SMD
Case: Power33
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SMMBT2369ALT1G ONSEMI mmbt2369lt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 40...120
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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FDMS86255ET150 ONSEMI fdms86255et150-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 44A; Idm: 276A; 136W; Power56
Drain-source voltage: 150V
Drain current: 44A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 63nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 276A
Mounting: SMD
Case: Power56
Produkt ist nicht verfügbar
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FDB0190N807L FDB0190N807L ONSEMI fdb0190n807l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6
Mounting: SMD
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 190A
Power dissipation: 250W
Pulsed drain current: 1.44kA
Gate charge: 249nC
Case: D2PAK-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 4.3mΩ
auf Bestellung 800 Stücke:
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SZMMSZ5231BT1G SZMMSZ5231BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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1N5282TR ONSEMI 1n5282-d.pdf FAIRS28582-1.pdf?t.download=true&u=5oefqw Category: THT universal diodes
Description: Diode: switching; THT; 80V; 0.2A; reel,tape; DO35
Case: DO35
Max. off-state voltage: 80V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: small signal
Mounting: THT
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CAV25020YE-GT3 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB83220D5&compId=CAV25020.pdf?ci_sign=b6e439923b8f01c87edb736106fa58c5bf81f8b4 Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: SPI
Memory organisation: 256x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 35ns
Kind of package: reel; tape
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BZX84C6V2LT1G BZX84C6V2LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 3µA
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1337+0.053 EUR
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SZBZX84C6V2LT1G SZBZX84C6V2LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
Application: automotive industry
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SZBZX84C6V2ET1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
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NDB5060L ONSEMI ndb5060l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; Idm: 78A; 68W; D2PAK-3
Case: D2PAK-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 50mΩ
Gate-source voltage: ±16V
Drain current: 26A
Drain-source voltage: 60V
Power dissipation: 68W
Pulsed drain current: 78A
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MC14025BDG MC14025BDG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e description Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Delay time: 130ns
Family: HEF4000B
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FCA20N60-F109 ONSEMI fca20n60_f109-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 208W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 75nC
Pulsed drain current: 60A
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FCMT360N65S3 ONSEMI fcmt360n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; PQFN4
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PQFN4
Mounting: SMD
Polarisation: unipolar
Gate charge: 18nC
On-state resistance: 0.36Ω
Power dissipation: 83W
Drain current: 10A
Gate-source voltage: ±30V
Pulsed drain current: 25A
Kind of package: reel; tape
Drain-source voltage: 650V
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FDD5N50NZTM ONSEMI fdd5n50nz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; Idm: 16A; 62W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 62W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
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LM2575D2T-ADJG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED68AAB2A8FFD09BE21&compId=LM2575-ON-DTE.PDF?ci_sign=91792adb27eab164ca8ff9fb230c949c2520fd88 Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
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FL7760AM6X FL7760AM6X ONSEMI fl7760-d.pdf Category: Voltage regulators - PWM circuits
Description: PMIC; DC/DC converter,LED driver; Uin: 8÷70V; -2.5÷1.5A; SOT23-6
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Frequency: 1MHz
Case: SOT23-6
Mounting: SMD
Input voltage: 8...70V
Kind of package: reel; tape
Integrated circuit features: linear dimming; PWM
Application: for LED applications
Topology: buck
Output current: -2.5...1.5A
Number of channels: 1
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MMBFJ175 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A9B12C0BFE9CBE27&compId=MMBFJ17X-DTE.pdf?ci_sign=7faeb449ab6ec932f48342f39e9dacba4889197f Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 7mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 7mA
Power dissipation: 0.225W
Case: SOT23
On-state resistance: 125Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Gate-source voltage: 30V
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J176-D74Z J176-D74Z ONSEMI j175-d.pdf Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.35W; TO92; Igt: 50mA
Case: TO92
Mounting: THT
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Gate current: 50mA
Power dissipation: 0.35W
Gate-source voltage: 30V
On-state resistance: 250Ω
Kind of package: Ammo Pack
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FCD1300N80Z ONSEMI fcd1300n80z-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 12A; 52W; DPAK
Mounting: SMD
Case: DPAK
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 12A
Drain-source voltage: 800V
Drain current: 4A
On-state resistance: 1.3Ω
Type of transistor: N-MOSFET
Power dissipation: 52W
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TIP42AG TIP42AG ONSEMI tip41a-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Case: TO220AB
Current gain: 15...75
Mounting: THT
Frequency: 3MHz
Power dissipation: 65W
Kind of package: tube
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104+0.69 EUR
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FCD5N60TM-WS ONSEMI fcu5n60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 13.8A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.6A
Pulsed drain current: 13.8A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
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MM5Z4703T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CA4F3F20D700D8&compId=MM5Z4xxxT1G.PDF?ci_sign=ebf57ef151ccd1a797560830f787da2551b0304f
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 16V; SMD; reel,tape; SOD523F; single diode
Mounting: SMD
Tolerance: ±5%
Zener voltage: 16V
Power dissipation: 0.5W
Kind of package: reel; tape
Type of diode: Zener
Manufacturer series: MM5Z4xxxT1G
Case: SOD523F
Semiconductor structure: single diode
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NCP12700ADNR2G NCP12700-D.PDF ncp12700-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1÷2.8A; 185÷1000kHz
Type of integrated circuit: PMIC
Case: MSOP10
Mounting: SMD
Operating voltage: 9...28V DC
Frequency: 185...1000kHz
Output current: 1...2.8A
Number of channels: 1
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback; forward
Operating temperature: -40...125°C
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NCP12700BDNR2G ncp12700-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1÷2.8A; 185÷1000kHz
Type of integrated circuit: PMIC
Case: MSOP10
Mounting: SMD
Operating voltage: 9...28V DC
Frequency: 185...1000kHz
Output current: 1...2.8A
Number of channels: 1
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback; forward
Operating temperature: -40...125°C
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NCP12700BMTTXG ncp12700-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1÷2.8A; 185÷1000kHz
Type of integrated circuit: PMIC
Case: WQFN10
Mounting: SMD
Operating voltage: 9...28V DC
Frequency: 185...1000kHz
Output current: 1...2.8A
Number of channels: 1
Kind of integrated circuit: AC/DC switcher; PWM controller
Topology: flyback; forward
Operating temperature: -40...125°C
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74ACT139MTC ONSM-S-A0003589990-1.pdf?t.download=true&u=5oefqw FAIRS01311-1.pdf?t.download=true&u=5oefqw
74ACT139MTC
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; SMD; TSSOP16; ACT; tube
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Mounting: SMD
Case: TSSOP16
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 40µA
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74ACT139MTCX ONSM-S-A0003589990-1.pdf?t.download=true&u=5oefqw
74ACT139MTCX
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; SMD; TSSOP16; ACT; 40uA
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Mounting: SMD
Case: TSSOP16
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
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74ACT139SCX ONSM-S-A0003589990-1.pdf?t.download=true&u=5oefqw
74ACT139SCX
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; SMD; SO16; ACT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Mounting: SMD
Case: SO16
Manufacturer series: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 40µA
Produkt ist nicht verfügbar
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MC74ACT139DR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62926CB2180D3&compId=MC74AC139-D.pdf?ci_sign=dfe7d7c26b85033f3926b44d0bcc2bfc05326ffb
MC74ACT139DR2G
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Technology: TTL
Mounting: SMD
Case: SOIC16
Manufacturer series: ACT
Family: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MC74ACT139DTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E629A14A1F40D3&compId=MC74AC139-D.pdf?ci_sign=07013f6e023c3daaa0cf3444f2b8a06486f4ecb3
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; TTL; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Technology: TTL
Mounting: SMD
Case: TSSOP16
Manufacturer series: ACT
Family: ACT
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MC74AC139DG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E628647BDC20D3&compId=MC74AC139-D.pdf?ci_sign=44d07ee4d0082ace8496956767c7b8131c023fd2
MC74AC139DG
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; CMOS; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: AC
Family: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74AC139DR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E628647BDD60D3&compId=MC74AC139-D.pdf?ci_sign=7627523ecf7ca8c9c7ed4c5e30208ee40feb2bbb
MC74AC139DR2G
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; CMOS; SMD; SOIC16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: AC
Family: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74AC139DTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E628647BDEA0D3&compId=MC74AC139-D.pdf?ci_sign=2241251693d938b54ad9a376a7a6a575f544325d
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; IN: 3; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: decoder; demultiplexer
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: AC
Family: AC
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FDBL0150N60 fdbl0150n60-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MMBZ5241BLT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc
MMBZ5241BLT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 2µA
Manufacturer series: MMBZ52xxBLT1G
auf Bestellung 2948 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
569+0.13 EUR
705+0.1 EUR
1749+0.041 EUR
2763+0.026 EUR
2948+0.024 EUR
Mindestbestellmenge: 455
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FCD7N60TM-WS fcd7n60-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCI7N60 fci7n60-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 21A; 83W; I2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 21A
Power dissipation: 83W
Case: I2PAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCH47N60F-F133 fch47n60f-d.pdf
FCH47N60F-F133
+1
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 141A; 417W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 141A
Power dissipation: 417W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 73mΩ
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+12.2 EUR
7+11.53 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
FDC3601N fdc3601n-d.pdf
FDC3601N
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 1A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 976mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
109+0.66 EUR
206+0.35 EUR
218+0.33 EUR
1000+0.32 EUR
Mindestbestellmenge: 81
Im Einkaufswagen  Stück im Wert von  UAH
FDC3612 fdc3612-d.pdf
FDC3612
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; 1.6W; SuperSOT-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2998 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
132+0.54 EUR
194+0.37 EUR
205+0.35 EUR
500+0.34 EUR
Mindestbestellmenge: 120
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SBAS21LT1G bas19lt1-d.pdf
SBAS21LT1G
+1
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 0.2A; 50ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Capacitance: 5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.385W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NSVRB751V40T1G rb751v40t1-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT25256XI-T2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C7FB610C0D5&compId=CAT25256-D.pdf?ci_sign=1e17818f9e22c5bfe7ff8e0e9edeffa2ceb4c1b2
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT25256YI-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79C7FB61200D5&compId=CAT25256-D.pdf?ci_sign=b5de27d053465c00870ea708b3f135c1cf623e7f
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 256kbEEPROM; SPI; 32kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 256kb EEPROM
Interface: SPI
Memory organisation: 32kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NCP785AH120T1G ncp785a-d.pdf
NCP785AH120T1G
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 1.2V; 10mA; SOT89; SMD; ±5%
Mounting: SMD
Number of channels: 1
Case: SOT89
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 10mA
Output voltage: 1.2V
Tolerance: ±5%
Input voltage: 25...450V
Kind of voltage regulator: fixed; linear
Manufacturer series: NCP785A
Produkt ist nicht verfügbar
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FDBL0240N100 fdbl0240n100-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 210A; Idm: 910A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 210A
Pulsed drain current: 910A
Power dissipation: 300W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 79nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MBR1080G pVersion=0046&contRep=ZT&docId=005056AB752F1EE584EB2D97610C6469&compId=MBR10100G.PDF?ci_sign=8305eeba20bae50309cbee4af22988a5e815f9f7
MBR1080G
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 10A; TO220AC; Ufmax: 0.85V
Kind of package: tube
Semiconductor structure: single diode
Case: TO220AC
Mounting: THT
Type of diode: Schottky rectifying
Heatsink thickness: 1.14...1.39mm
Max. forward voltage: 0.85V
Load current: 10A
Max. load current: 20A
Max. forward impulse current: 150A
Max. off-state voltage: 80V
Produkt ist nicht verfügbar
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NCV3843BVD1R2G ncv3843bv-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO8; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 702mW
Application: automotive industry
Produkt ist nicht verfügbar
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NCV3843BVDR2G ncv3843bv-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 1A; 48÷500kHz; Ch: 1; SO14; flyback; 0÷96%
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 1A
Frequency: 48...500kHz
Number of channels: 1
Case: SO14
Mounting: SMD
Operating temperature: -40...105°C
Topology: flyback
Operating voltage: 7.6...36V
Supply voltage: 8.4...36V
Duty cycle factor: 0...96%
Kind of package: reel; tape
Power: 862mW
Application: automotive industry
Produkt ist nicht verfügbar
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BC818-40LT1G bc818-40lt1-d.pdf
BC818-40LT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 25V; 0.5A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 0.5A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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NTR4003NT1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE7868A3582F9A20745&compId=NTR4003N.PDF?ci_sign=b3216589411edabf78a677fe51c768f1946900ff
NTR4003NT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.56A; 0.69W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.56A
Power dissipation: 0.69W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.15nC
auf Bestellung 5720 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
837+0.086 EUR
1819+0.039 EUR
1924+0.037 EUR
Mindestbestellmenge: 837
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FDD8444 fdd8444-d.pdf FAIR-S-A0002365728-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; 153W; DPAK
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 89nC
On-state resistance: 5.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 40V
Power dissipation: 153W
Drain current: 50A
Case: DPAK
Kind of channel: enhancement
Produkt ist nicht verfügbar
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KSB1366GTU pVersion=0046&contRep=ZT&docId=005056AB281E1EDEBCE346BD9676E0D6&compId=KSB1366.pdf?ci_sign=9786bd7aefb0b39ddb33dc6e5719baf70af36f5e
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 3A; 2W; TO220FP
Mounting: THT
Type of transistor: PNP
Power dissipation: 2W
Collector current: 3A
Collector-emitter voltage: 60V
Current gain: 150...320
Frequency: 9MHz
Kind of package: tube
Polarisation: bipolar
Case: TO220FP
Produkt ist nicht verfügbar
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FDT1600N10ALZ fdt1600n10alz-d.pdf
FDT1600N10ALZ
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; 10.42W; SOT223
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 3.5A
On-state resistance: 0.16Ω
Type of transistor: N-MOSFET
Power dissipation: 10.42W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 2602 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
73+0.99 EUR
98+0.73 EUR
113+0.63 EUR
143+0.5 EUR
152+0.47 EUR
250+0.45 EUR
Mindestbestellmenge: 73
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FDB0260N1007L fdb0260n1007l-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1100A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 1100A
Power dissipation: 250W
Case: D2PAK-7
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 84nC
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
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FDBL0260N100 fdbl0260n100-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 200A; Idm: 1000A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 200A
Pulsed drain current: 1kA
Power dissipation: 250W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 83nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCMT199N60 fcmt199n60-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; Idm: 60.6A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 208W
Case: Power88
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 60.6A
Gate charge: 57nC
Produkt ist nicht verfügbar
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FCD620N60ZF fcd620n60zf-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.3A; Idm: 21.9A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.3A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 620mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 20nC
Pulsed drain current: 21.9A
Produkt ist nicht verfügbar
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SZNUP2124MXWTBG sznup2124-d.pdf
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 26÷33V; bidirectional; XDFNW3; reel,tape
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Breakdown voltage: 26...33V
Application: automotive industry
Kind of package: reel; tape
Type of diode: TVS
Case: XDFNW3
Produkt ist nicht verfügbar
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FDMC86259P fdmc86259p-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -13A; Idm: -20A; 62W; Power33
Drain-source voltage: -150V
Drain current: -13A
On-state resistance: 178mΩ
Type of transistor: P-MOSFET
Power dissipation: 62W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 32nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Pulsed drain current: -20A
Mounting: SMD
Case: Power33
Produkt ist nicht verfügbar
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SMMBT2369ALT1G mmbt2369lt1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 15V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 40...120
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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FDMS86255ET150 fdms86255et150-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 44A; Idm: 276A; 136W; Power56
Drain-source voltage: 150V
Drain current: 44A
On-state resistance: 25mΩ
Type of transistor: N-MOSFET
Power dissipation: 136W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 63nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 276A
Mounting: SMD
Case: Power56
Produkt ist nicht verfügbar
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FDB0190N807L fdb0190n807l-d.pdf
FDB0190N807L
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 190A; Idm: 1440A; 250W; D2PAK-6
Mounting: SMD
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 190A
Power dissipation: 250W
Pulsed drain current: 1.44kA
Gate charge: 249nC
Case: D2PAK-6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
On-state resistance: 4.3mΩ
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+5.99 EUR
14+5.15 EUR
15+4.79 EUR
25+4.75 EUR
Mindestbestellmenge: 12
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SZMMSZ5231BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
SZMMSZ5231BT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
auf Bestellung 2693 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
353+0.2 EUR
432+0.17 EUR
587+0.12 EUR
913+0.078 EUR
939+0.076 EUR
Mindestbestellmenge: 264
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1N5282TR 1n5282-d.pdf FAIRS28582-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 80V; 0.2A; reel,tape; DO35
Case: DO35
Max. off-state voltage: 80V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: small signal
Mounting: THT
Produkt ist nicht verfügbar
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CAV25020YE-GT3 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D5DB83220D5&compId=CAV25020.pdf?ci_sign=b6e439923b8f01c87edb736106fa58c5bf81f8b4
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 2kbEEPROM; SPI; 256x8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 2kb EEPROM
Interface: SPI
Memory organisation: 256x8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 35ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BZX84C6V2LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
BZX84C6V2LT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Kind of package: reel; tape
Case: SOT23
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: BZX84C
Leakage current: 3µA
auf Bestellung 4508 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
807+0.089 EUR
915+0.078 EUR
1337+0.053 EUR
1645+0.043 EUR
2488+0.029 EUR
3497+0.02 EUR
3704+0.019 EUR
Mindestbestellmenge: 556
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SZBZX84C6V2LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
SZBZX84C6V2LT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode; 3uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX84C
Application: automotive industry
auf Bestellung 2725 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
926+0.077 EUR
1539+0.046 EUR
2110+0.034 EUR
2273+0.031 EUR
2404+0.03 EUR
Mindestbestellmenge: 556
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SZBZX84C6V2ET1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 6.2V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 6.2V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
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NDB5060L ndb5060l-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26A; Idm: 78A; 68W; D2PAK-3
Case: D2PAK-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 50mΩ
Gate-source voltage: ±16V
Drain current: 26A
Drain-source voltage: 60V
Power dissipation: 68W
Pulsed drain current: 78A
Produkt ist nicht verfügbar
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MC14025BDG description pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B497DD6AB820&compId=MC14001B-D.pdf?ci_sign=d22667ce4c99a05204a5589c1c1a2d691ef8755e
MC14025BDG
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 3; IN: 3; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of channels: triple; 3
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: tube
Delay time: 130ns
Family: HEF4000B
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
154+0.46 EUR
172+0.42 EUR
178+0.4 EUR
184+0.39 EUR
191+0.38 EUR
Mindestbestellmenge: 136
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FCA20N60-F109 fca20n60_f109-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 60A; 208W; TO3P
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 208W
Case: TO3P
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 75nC
Pulsed drain current: 60A
Produkt ist nicht verfügbar
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FCMT360N65S3 fcmt360n65s3-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 25A; 83W; PQFN4
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: PQFN4
Mounting: SMD
Polarisation: unipolar
Gate charge: 18nC
On-state resistance: 0.36Ω
Power dissipation: 83W
Drain current: 10A
Gate-source voltage: ±30V
Pulsed drain current: 25A
Kind of package: reel; tape
Drain-source voltage: 650V
Produkt ist nicht verfügbar
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FDD5N50NZTM fdd5n50nz-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 4A; Idm: 16A; 62W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 62W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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LM2575D2T-ADJG pVersion=0046&contRep=ZT&docId=005056AB752F1ED68AAB2A8FFD09BE21&compId=LM2575-ON-DTE.PDF?ci_sign=91792adb27eab164ca8ff9fb230c949c2520fd88
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 1.23÷37VDC; 1A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 1.23...37V DC
Output current: 1A
Case: D2PAK-5
Mounting: SMD
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
Produkt ist nicht verfügbar
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FL7760AM6X fl7760-d.pdf
FL7760AM6X
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: PMIC; DC/DC converter,LED driver; Uin: 8÷70V; -2.5÷1.5A; SOT23-6
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Frequency: 1MHz
Case: SOT23-6
Mounting: SMD
Input voltage: 8...70V
Kind of package: reel; tape
Integrated circuit features: linear dimming; PWM
Application: for LED applications
Topology: buck
Output current: -2.5...1.5A
Number of channels: 1
Produkt ist nicht verfügbar
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MMBFJ175 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A9B12C0BFE9CBE27&compId=MMBFJ17X-DTE.pdf?ci_sign=7faeb449ab6ec932f48342f39e9dacba4889197f
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-JFET; unipolar; 7mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 7mA
Power dissipation: 0.225W
Case: SOT23
On-state resistance: 125Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Gate-source voltage: 30V
Produkt ist nicht verfügbar
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J176-D74Z j175-d.pdf
J176-D74Z
Hersteller: ONSEMI
Category: THT P channel transistors
Description: Transistor: P-JFET; unipolar; 2mA; 0.35W; TO92; Igt: 50mA
Case: TO92
Mounting: THT
Type of transistor: P-JFET
Polarisation: unipolar
Drain current: 2mA
Gate current: 50mA
Power dissipation: 0.35W
Gate-source voltage: 30V
On-state resistance: 250Ω
Kind of package: Ammo Pack
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
Mindestbestellmenge: 61
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FCD1300N80Z fcd1300n80z-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 12A; 52W; DPAK
Mounting: SMD
Case: DPAK
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 16.2nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 12A
Drain-source voltage: 800V
Drain current: 4A
On-state resistance: 1.3Ω
Type of transistor: N-MOSFET
Power dissipation: 52W
Produkt ist nicht verfügbar
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TIP42AG tip41a-d.pdf
TIP42AG
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 65W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 6A
Case: TO220AB
Current gain: 15...75
Mounting: THT
Frequency: 3MHz
Power dissipation: 65W
Kind of package: tube
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
48+1.51 EUR
104+0.69 EUR
110+0.65 EUR
Mindestbestellmenge: 40
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FCD5N60TM-WS fcu5n60-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 4.6A; Idm: 13.8A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.6A
Pulsed drain current: 13.8A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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