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MC74HCT86ADTR2G MC74HCT86ADTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B58CA12CF820&compId=MC74HCT86A-D.pdf?ci_sign=a02063b2714369573804418297576f8c3d493c32 Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HCT
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NTMFS5C673NLT1G NTMFS5C673NLT1G ONSEMI ntmfs5c673nl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; 23W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 23W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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MURH860CTG ONSEMI murh860ct-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; TO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: common cathode; double
Kind of package: tube
Case: TO220AB
Reverse recovery time: 35ns
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FDP33N25 FDP33N25 ONSEMI fdp33n25-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 20.4A; Idm: 132A; 235W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 20.4A
Pulsed drain current: 132A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 94mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 90 Stücke:
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31+2.37 EUR
36+2.02 EUR
44+1.64 EUR
47+1.54 EUR
Mindestbestellmenge: 31
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GBPC1510 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 300A
Kind of package: bulk
Case: GBPC
Type of bridge rectifier: single-phase
Version: square
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 15A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1kV
Leads: connectors FASTON
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GBPC1510W ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1 Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 300A
Kind of package: bulk
Case: GBPC-W
Type of bridge rectifier: single-phase
Version: square
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 15A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1kV
Leads: wire Ø 1.0mm
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BZX79C4V7 BZX79C4V7 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4C99B02EF3280D8&compId=BZX79C.PDF?ci_sign=c5f9f1ba927e6726aea7f3c3708d21b3e5759106 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; bulk; CASE017AG; single diode; 3uA; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX79C
auf Bestellung 1384 Stücke:
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455+0.16 EUR
610+0.12 EUR
933+0.077 EUR
1122+0.064 EUR
1384+0.051 EUR
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FDD770N15A FDD770N15A ONSEMI fdd770n15a-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 56.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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MSR1560G ONSEMI msr1560-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC; 45ns
Case: TO220AC
Reverse recovery time: 45ns
Semiconductor structure: single diode
Load current: 15A
Max. off-state voltage: 0.6kV
Kind of package: tube
Type of diode: rectifying
Mounting: THT
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KA1H0165RTU ONSEMI ONSM-S-A0003590352-1.pdf?t.download=true&u=5oefqw KA1H0165R%28N%29.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 700mA; 650V; 100kHz; Ch: 1; TO220F-4; 10Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.7A
Output voltage: 650V
Frequency: 0.1MHz
Number of channels: 1
Case: TO220F-4
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback; forward
On-state resistance: 10Ω
Duty cycle factor: 64...70%
Kind of package: tube
Power: 40W
Operating voltage: 10...25V DC
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LM358M LM358M ONSEMI pVersion=0046&contRep=ZT&docId=E20E0F46CB108DF1A303005056AB0C4F&compId=LM358A.pdf?ci_sign=98367459edae4eac47e374c413445e189e6ad7b3 Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 2
Case: SO8
Operating temperature: -40...85°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
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MM3Z2V4T1G MM3Z2V4T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
auf Bestellung 6096 Stücke:
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556+0.13 EUR
834+0.086 EUR
1462+0.049 EUR
1846+0.039 EUR
2858+0.025 EUR
3312+0.022 EUR
3522+0.02 EUR
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SZNSP2201MR6T1G ONSEMI nsp2201mr6-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Semiconductor structure: unidirectional
Number of channels: 2
Max. off-state voltage: 5V
Breakdown voltage: 6V
Application: automotive industry
Type of diode: TVS array
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SZNSP4201MR6T1G ONSEMI nsp4201mr6-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 4; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Semiconductor structure: unidirectional
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
Application: automotive industry
Type of diode: TVS array
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GBU4K GBU4K ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DA2D0D663A0D2&compId=GBU4x.PDF?ci_sign=c484993c04cddfef427267792371b43350125246 Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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NCP3335ADM300R2G ONSEMI ncp3335a-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 500mA; Micro8; SMD
Mounting: SMD
Tolerance: ±1.5%
Operating temperature: -40...85°C
Manufacturer series: NCP3335A
Type of integrated circuit: voltage regulator
Voltage drop: 0.34V
Output current: 0.5A
Number of channels: 2
Output voltage: 3V
Input voltage: 2.6...12V
Case: Micro8
Kind of voltage regulator: fixed; LDO; linear
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NCP383LMUAJAATXG ONSEMI ncp383-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.8A; Ch: 2; N-Channel; SMD; uDFN10
Kind of integrated circuit: high-side
Kind of package: reel; tape
Active logical level: low
Kind of output: N-Channel
Mounting: SMD
Case: uDFN10
Control voltage: 0...5.5V DC
On-state resistance: 95mΩ
Output current: 0.5...2.8A
Supply voltage: 2.7...5.5V DC
Number of channels: 2
Type of integrated circuit: power switch
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MM3Z15VST1G MM3Z15VST1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CE7126938B00D8&compId=MM3ZxxST1G.PDF?ci_sign=9d2986dd4c3f0c41ba91b8a7a5b3f1ff8b7685f7 Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
auf Bestellung 1214 Stücke:
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604+0.12 EUR
893+0.08 EUR
1112+0.064 EUR
1214+0.059 EUR
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MM3Z15VC MM3Z15VC ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4B2DC61B30B40D3&compId=MM3Z9V1C.PDF?ci_sign=80c7d43cf15c24b9d5f079d336a50665a22c140f Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOD323F; single diode; 45nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Manufacturer series: MM3Z
Leakage current: 45nA
auf Bestellung 2985 Stücke:
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585+0.12 EUR
1064+0.067 EUR
1104+0.065 EUR
1348+0.053 EUR
1553+0.046 EUR
1667+0.043 EUR
1707+0.042 EUR
Mindestbestellmenge: 585
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LM2596DSADJR4G ONSEMI lm2596-d.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Case: D2PAK-5
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
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LM2596TVADJG ONSEMI lm2596-d.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; TO220-5; THT; tube
Case: TO220-5
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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LM2904ADMR2G ONSEMI lm358-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; Micro8; 3÷32VDC; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: dual
Case: Micro8
Operating temperature: -40...105°C
Input offset voltage: 10mV
Voltage supply range: 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
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MJ2955G ONSEMI 2n3055-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 15A; 115W; TO204,TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 15A
Power dissipation: 115W
Case: TO3; TO204
Current gain: 20...70
Mounting: THT
Kind of package: in-tray
Frequency: 2.5MHz
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MJD2955T4G ONSEMI mjd2955-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 2MHz
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MJE2955TG ONSEMI mje2955t-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 125W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 125W
Case: TO220AB
Current gain: 20...100
Mounting: THT
Kind of package: tube
Frequency: 2MHz
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SVD2955T4G ONSEMI ntd2955-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Drain-source voltage: -60V
Pulsed drain current: -18A
Drain current: -12A
Gate charge: 15nC
On-state resistance: 0.18Ω
Power dissipation: 55W
Gate-source voltage: ±20V
Polarisation: unipolar
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SS8550CTA SS8550CTA ONSEMI ss8550-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 25V; 1.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
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NGTB40N120FL2WG ONSEMI ngtb40n120fl2w-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 267W; TO247-3
Type of transistor: IGBT
Power dissipation: 267W
Case: TO247-3
Mounting: THT
Gate charge: 313nC
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
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NTHL040N120M3S ONSEMI nthl040n120m3s-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38A; Idm: 134A; 115W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 38A
Pulsed drain current: 134A
Power dissipation: 115W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
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NVBG040N120M3S ONSEMI NVBG040N120M3S-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 40A
Pulsed drain current: 149A
Power dissipation: 131W
Case: D2PAK-7
Gate-source voltage: -3...18V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 75nC
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Kind of channel: enhancement
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NVBG040N120SC1 ONSEMI nvbg040n120sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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NVHL040N120SC1 ONSEMI nvhl040n120sc1-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
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LM358EDR2G ONSEMI lm358-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Input offset current: 150nA
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LM358DMR2G ONSEMI lm358-d.pdf description Category: SMD operational amplifiers
Description: IC: operational amplifier; Micro8; 3÷32VDC; reel,tape; 150nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: dual
Case: Micro8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Voltage supply range: 3...32V DC
Input offset current: 150nA
Kind of package: reel; tape
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MMBT3906TT1G ONSEMI mmbt3906tt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
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NSVMMBT3906TT1G ONSEMI mmbt3906tt1-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
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LM339DTBR2G ONSEMI lm339-d.pdf Category: SMD comparators
Description: IC: comparator; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape; Iio: 5nA
Type of integrated circuit: comparator
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: TSSOP14
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
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LM339EDR2G ONSEMI lm339-d.pdf Category: SMD comparators
Description: IC: comparator; Cmp: 4; 3÷36V; SMT; SO14; reel,tape; Iio: 5nA; IB: 25nA
Type of integrated circuit: comparator
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: SO14
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Produkt ist nicht verfügbar
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FCP380N60 ONSEMI fcpf380n60-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCP380N60E ONSEMI FAIR-S-A0002365473-1.pdf?t.download=true&u=5oefqw FCPF380N60E-D.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCPF380N60 ONSEMI fcpf380n60-d.pdf ONSM-S-A0003584318-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCPF380N60E ONSEMI FCPF380N60E-D.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NGTB15N120FL2WG ONSEMI ngtb15n120fl2w-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 147W; TO247-3
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 109nC
Collector current: 15A
Gate-emitter voltage: ±20V
Power dissipation: 147W
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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NGTB25N120FL3WG ONSEMI ngtb25n120fl3w-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Produkt ist nicht verfügbar
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NSVBC817-40WT1G ONSEMI bc817-40w-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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MC33202DMR2G ONSEMI mc33201-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Micro8; ±1.8÷12VDC; reel,tape
Mounting: SMT
Case: Micro8
Operating temperature: -40...105°C
Kind of package: reel; tape
Input offset current: 100nA
Input bias current: 0.25µA
Input offset voltage: 11mV
Voltage supply range: ± 1.8...12V DC
Slew rate: 1V/μs
Bandwidth: 2.2MHz
Number of channels: dual
Type of integrated circuit: operational amplifier
Produkt ist nicht verfügbar
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MC33202VDR2G ONSEMI mc33201-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; SO8; ±1.8÷12VDC; reel,tape
Mounting: SMT
Case: SO8
Operating temperature: -55...125°C
Kind of package: reel; tape
Input offset current: 200nA
Input bias current: 0.5µA
Input offset voltage: 14mV
Voltage supply range: ± 1.8...12V DC
Slew rate: 1V/μs
Bandwidth: 2.2MHz
Number of channels: dual
Type of integrated circuit: operational amplifier
Produkt ist nicht verfügbar
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LM2902DTBR2G ONSEMI lm324-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; TSSOP14; 3÷32VDC; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: quad
Case: TSSOP14
Operating temperature: -40...105°C
Input offset voltage: 10mV
Voltage supply range: 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
Produkt ist nicht verfügbar
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LM2902EDR2G ONSEMI lm324-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; SO14; 3÷32VDC; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: quad
Case: SO14
Operating temperature: -40...105°C
Input offset voltage: 10mV
Voltage supply range: 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
Produkt ist nicht verfügbar
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LM2902VDR2G ONSEMI lm324-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; SO14; 3÷32VDC; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: quad
Case: SO14
Operating temperature: -40...125°C
Input offset voltage: 13mV
Voltage supply range: 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
Produkt ist nicht verfügbar
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LM2902VDTBR2G ONSEMI lm324-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; TSSOP14; 3÷32VDC; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: quad
Case: TSSOP14
Operating temperature: -40...125°C
Input offset voltage: 13mV
Voltage supply range: 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
Produkt ist nicht verfügbar
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MC33274ADTBR2G ONSEMI mc33272a-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; TSSOP14; ±1.5÷18VDC,3÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Mounting: SMT
Case: TSSOP14
Slew rate: 10V/μs
Operating temperature: -40...85°C
Input offset voltage: 1.8mV
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 80nA
Number of channels: quad
Produkt ist nicht verfügbar
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NVMTSC4D3N15MC ONSEMI nvmtsc4d3n15mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 165A; Idm: 900A; 146W; TDFNW8
Kind of package: reel; tape
Pulsed drain current: 900A
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: TDFNW8
Gate charge: 79nC
On-state resistance: 4.45mΩ
Power dissipation: 146W
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 165A
Produkt ist nicht verfügbar
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MC78M12ACDTRKG ONSEMI mc78m00-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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NCV78M12BDTRKG ONSEMI mc78m00-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Produkt ist nicht verfügbar
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J112-D26Z J112-D26Z ONSEMI MMBFJ113-D.PDF Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA
Kind of package: tape
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 5mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 50Ω
Produkt ist nicht verfügbar
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J112-D27Z J112-D27Z ONSEMI MMBFJ113-D.PDF Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA
Kind of package: tape
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 5mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 50Ω
Produkt ist nicht verfügbar
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J112-D74Z J112-D74Z ONSEMI MMBFJ113-D.PDF Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA
Kind of package: Ammo Pack
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 5mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 50Ω
Produkt ist nicht verfügbar
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LM1117MPX-50NOPB ONSEMI lm1117-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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MC7805ACD2TR4G ONSEMI mc7800-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Case: D2PAK
Output current: 1A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Output voltage: 5V
Kind of voltage regulator: fixed; linear
Produkt ist nicht verfügbar
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MC74HCT86ADTR2G pVersion=0046&contRep=ZT&docId=005056AB82531ED9A384B58CA12CF820&compId=MC74HCT86A-D.pdf?ci_sign=a02063b2714369573804418297576f8c3d493c32
MC74HCT86ADTR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷6VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 20ns
Family: HCT
Produkt ist nicht verfügbar
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NTMFS5C673NLT1G ntmfs5c673nl-d.pdf
NTMFS5C673NLT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; 23W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Power dissipation: 23W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 9.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MURH860CTG murh860ct-d.pdf
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; TO220AB; 35ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: common cathode; double
Kind of package: tube
Case: TO220AB
Reverse recovery time: 35ns
Produkt ist nicht verfügbar
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FDP33N25 fdp33n25-d.pdf
FDP33N25
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 20.4A; Idm: 132A; 235W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 20.4A
Pulsed drain current: 132A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 94mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.37 EUR
36+2.02 EUR
44+1.64 EUR
47+1.54 EUR
Mindestbestellmenge: 31
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GBPC1510 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 300A
Kind of package: bulk
Case: GBPC
Type of bridge rectifier: single-phase
Version: square
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 15A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1kV
Leads: connectors FASTON
Produkt ist nicht verfügbar
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GBPC1510W pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB7E2E75E228460DC&compId=GBPCxx.PDF?ci_sign=1d07e69de404d3d7c708d9cee3e72581c36322d1
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 15A; Ifsm: 300A
Kind of package: bulk
Case: GBPC-W
Type of bridge rectifier: single-phase
Version: square
Electrical mounting: THT
Max. forward voltage: 1.1V
Load current: 15A
Max. forward impulse current: 0.3kA
Max. off-state voltage: 1kV
Leads: wire Ø 1.0mm
Produkt ist nicht verfügbar
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BZX79C4V7 pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4C99B02EF3280D8&compId=BZX79C.PDF?ci_sign=c5f9f1ba927e6726aea7f3c3708d21b3e5759106
BZX79C4V7
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 4.7V; bulk; CASE017AG; single diode; 3uA; BZX79C
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 4.7V
Kind of package: bulk
Case: CASE017AG
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 3µA
Manufacturer series: BZX79C
auf Bestellung 1384 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
610+0.12 EUR
933+0.077 EUR
1122+0.064 EUR
1384+0.051 EUR
Mindestbestellmenge: 455
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FDD770N15A fdd770n15a-d.pdf
FDD770N15A
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 56.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+71.5 EUR
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MSR1560G msr1560-d.pdf
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 15A; tube; TO220AC; 45ns
Case: TO220AC
Reverse recovery time: 45ns
Semiconductor structure: single diode
Load current: 15A
Max. off-state voltage: 0.6kV
Kind of package: tube
Type of diode: rectifying
Mounting: THT
Produkt ist nicht verfügbar
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KA1H0165RTU ONSM-S-A0003590352-1.pdf?t.download=true&u=5oefqw KA1H0165R%28N%29.pdf
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; PWM controller; 700mA; 650V; 100kHz; Ch: 1; TO220F-4; 10Ω
Type of integrated circuit: PMIC
Kind of integrated circuit: PWM controller
Output current: 0.7A
Output voltage: 650V
Frequency: 0.1MHz
Number of channels: 1
Case: TO220F-4
Mounting: THT
Operating temperature: -25...85°C
Topology: flyback; forward
On-state resistance: 10Ω
Duty cycle factor: 64...70%
Kind of package: tube
Power: 40W
Operating voltage: 10...25V DC
Produkt ist nicht verfügbar
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LM358M pVersion=0046&contRep=ZT&docId=E20E0F46CB108DF1A303005056AB0C4F&compId=LM358A.pdf?ci_sign=98367459edae4eac47e374c413445e189e6ad7b3
LM358M
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: 2
Case: SO8
Operating temperature: -40...85°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Produkt ist nicht verfügbar
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MM3Z2V4T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CEB0970F3FE0D8&compId=MM3ZxxT1G.PDF?ci_sign=a647654c8258f6da9539eeb91ed2ccfef9c2983d
MM3Z2V4T1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.4V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.4V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
auf Bestellung 6096 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
834+0.086 EUR
1462+0.049 EUR
1846+0.039 EUR
2858+0.025 EUR
3312+0.022 EUR
3522+0.02 EUR
Mindestbestellmenge: 556
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SZNSP2201MR6T1G nsp2201mr6-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 2; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Semiconductor structure: unidirectional
Number of channels: 2
Max. off-state voltage: 5V
Breakdown voltage: 6V
Application: automotive industry
Type of diode: TVS array
Produkt ist nicht verfügbar
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SZNSP4201MR6T1G nsp4201mr6-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6V; unidirectional; TSOP6; Ch: 4; reel,tape
Mounting: SMD
Kind of package: reel; tape
Case: TSOP6
Semiconductor structure: unidirectional
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
Application: automotive industry
Type of diode: TVS array
Produkt ist nicht verfügbar
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GBU4K pVersion=0046&contRep=ZT&docId=005056AB281E1EDD809DA2D0D663A0D2&compId=GBU4x.PDF?ci_sign=c484993c04cddfef427267792371b43350125246
GBU4K
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 150A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
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NCP3335ADM300R2G ncp3335a-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 500mA; Micro8; SMD
Mounting: SMD
Tolerance: ±1.5%
Operating temperature: -40...85°C
Manufacturer series: NCP3335A
Type of integrated circuit: voltage regulator
Voltage drop: 0.34V
Output current: 0.5A
Number of channels: 2
Output voltage: 3V
Input voltage: 2.6...12V
Case: Micro8
Kind of voltage regulator: fixed; LDO; linear
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NCP383LMUAJAATXG ncp383-d.pdf
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 0.5÷2.8A; Ch: 2; N-Channel; SMD; uDFN10
Kind of integrated circuit: high-side
Kind of package: reel; tape
Active logical level: low
Kind of output: N-Channel
Mounting: SMD
Case: uDFN10
Control voltage: 0...5.5V DC
On-state resistance: 95mΩ
Output current: 0.5...2.8A
Supply voltage: 2.7...5.5V DC
Number of channels: 2
Type of integrated circuit: power switch
Produkt ist nicht verfügbar
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MM3Z15VST1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CE7126938B00D8&compId=MM3ZxxST1G.PDF?ci_sign=9d2986dd4c3f0c41ba91b8a7a5b3f1ff8b7685f7
MM3Z15VST1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 15V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxST1G
auf Bestellung 1214 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
604+0.12 EUR
893+0.08 EUR
1112+0.064 EUR
1214+0.059 EUR
Mindestbestellmenge: 604
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MM3Z15VC pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4B2DC61B30B40D3&compId=MM3Z9V1C.PDF?ci_sign=80c7d43cf15c24b9d5f079d336a50665a22c140f
MM3Z15VC
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 15V; SMD; reel,tape; SOD323F; single diode; 45nA
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323F
Semiconductor structure: single diode
Manufacturer series: MM3Z
Leakage current: 45nA
auf Bestellung 2985 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
585+0.12 EUR
1064+0.067 EUR
1104+0.065 EUR
1348+0.053 EUR
1553+0.046 EUR
1667+0.043 EUR
1707+0.042 EUR
Mindestbestellmenge: 585
Im Einkaufswagen  Stück im Wert von  UAH
LM2596DSADJR4G lm2596-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Case: D2PAK-5
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Kind of package: reel; tape
Mounting: SMD
Produkt ist nicht verfügbar
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LM2596TVADJG lm2596-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; TO220-5; THT; tube
Case: TO220-5
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Kind of package: tube
Mounting: THT
Produkt ist nicht verfügbar
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LM2904ADMR2G lm358-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; Micro8; 3÷32VDC; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: dual
Case: Micro8
Operating temperature: -40...105°C
Input offset voltage: 10mV
Voltage supply range: 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
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MJ2955G 2n3055-d.pdf
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 15A; 115W; TO204,TO3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 15A
Power dissipation: 115W
Case: TO3; TO204
Current gain: 20...70
Mounting: THT
Kind of package: in-tray
Frequency: 2.5MHz
Produkt ist nicht verfügbar
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MJD2955T4G mjd2955-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 20W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 20W
Case: DPAK
Current gain: 20...100
Mounting: SMD
Kind of package: reel; tape
Frequency: 2MHz
Produkt ist nicht verfügbar
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MJE2955TG mje2955t-d.pdf
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 10A; 125W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 10A
Power dissipation: 125W
Case: TO220AB
Current gain: 20...100
Mounting: THT
Kind of package: tube
Frequency: 2MHz
Produkt ist nicht verfügbar
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SVD2955T4G ntd2955-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Kind of package: reel; tape
Case: DPAK
Kind of channel: enhancement
Type of transistor: P-MOSFET
Mounting: SMD
Drain-source voltage: -60V
Pulsed drain current: -18A
Drain current: -12A
Gate charge: 15nC
On-state resistance: 0.18Ω
Power dissipation: 55W
Gate-source voltage: ±20V
Polarisation: unipolar
Produkt ist nicht verfügbar
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SS8550CTA ss8550-d.pdf
SS8550CTA
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 25V; 1.5A; 1W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 1.5A
Power dissipation: 1W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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NGTB40N120FL2WG ngtb40n120fl2w-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 40A; 267W; TO247-3
Type of transistor: IGBT
Power dissipation: 267W
Case: TO247-3
Mounting: THT
Gate charge: 313nC
Kind of package: tube
Collector current: 40A
Collector-emitter voltage: 1.2kV
Gate-emitter voltage: ±20V
Pulsed collector current: 200A
Produkt ist nicht verfügbar
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NTHL040N120M3S nthl040n120m3s-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38A; Idm: 134A; 115W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 38A
Pulsed drain current: 134A
Power dissipation: 115W
Case: TO247-3
Gate-source voltage: -10...22V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 75nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVBG040N120M3S NVBG040N120M3S-D.PDF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 40A
Pulsed drain current: 149A
Power dissipation: 131W
Case: D2PAK-7
Gate-source voltage: -3...18V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 75nC
Features of semiconductor devices: Kelvin terminal
Kind of package: reel; tape
Kind of channel: enhancement
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NVBG040N120SC1 nvbg040n120sc1-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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NVHL040N120SC1 nvhl040n120sc1-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 42A; Idm: 240A; 174W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 42A
Pulsed drain current: 240A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 106nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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LM358EDR2G lm358-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Input offset current: 150nA
Produkt ist nicht verfügbar
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LM358DMR2G description lm358-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; Micro8; 3÷32VDC; reel,tape; 150nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: dual
Case: Micro8
Operating temperature: 0...70°C
Input offset voltage: 9mV
Voltage supply range: 3...32V DC
Input offset current: 150nA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MMBT3906TT1G mmbt3906tt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Produkt ist nicht verfügbar
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NSVMMBT3906TT1G mmbt3906tt1-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 0.2W; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.2W
Case: SC75; SOT416
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Application: automotive industry
Produkt ist nicht verfügbar
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LM339DTBR2G lm339-d.pdf
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; Cmp: 4; 3÷36V; SMT; TSSOP14; reel,tape; Iio: 5nA
Type of integrated circuit: comparator
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: TSSOP14
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Produkt ist nicht verfügbar
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LM339EDR2G lm339-d.pdf
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; Cmp: 4; 3÷36V; SMT; SO14; reel,tape; Iio: 5nA; IB: 25nA
Type of integrated circuit: comparator
Number of comparators: 4
Operating voltage: 3...36V
Mounting: SMT
Case: SO14
Operating temperature: 0...70°C
Input offset voltage: 5mV
Kind of package: reel; tape
Input offset current: 5nA
Input bias current: 25nA
Produkt ist nicht verfügbar
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FCP380N60 fcpf380n60-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCP380N60E FAIR-S-A0002365473-1.pdf?t.download=true&u=5oefqw FCPF380N60E-D.PDF
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 106W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCPF380N60 fcpf380n60-d.pdf ONSM-S-A0003584318-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCPF380N60E FCPF380N60E-D.PDF
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.2A; Idm: 30.6A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 34nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NGTB15N120FL2WG ngtb15n120fl2w-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 15A; 147W; TO247-3
Type of transistor: IGBT
Mounting: THT
Case: TO247-3
Kind of package: tube
Gate charge: 109nC
Collector current: 15A
Gate-emitter voltage: ±20V
Power dissipation: 147W
Pulsed collector current: 60A
Collector-emitter voltage: 1.2kV
Produkt ist nicht verfügbar
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NGTB25N120FL3WG ngtb25n120fl3w-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 174W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 174W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 136nC
Kind of package: tube
Produkt ist nicht verfügbar
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NSVBC817-40WT1G bc817-40w-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.46W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.46W
Case: SC70; SOT323
Current gain: 250...600
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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MC33202DMR2G mc33201-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; Micro8; ±1.8÷12VDC; reel,tape
Mounting: SMT
Case: Micro8
Operating temperature: -40...105°C
Kind of package: reel; tape
Input offset current: 100nA
Input bias current: 0.25µA
Input offset voltage: 11mV
Voltage supply range: ± 1.8...12V DC
Slew rate: 1V/μs
Bandwidth: 2.2MHz
Number of channels: dual
Type of integrated circuit: operational amplifier
Produkt ist nicht verfügbar
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MC33202VDR2G mc33201-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 2.2MHz; SO8; ±1.8÷12VDC; reel,tape
Mounting: SMT
Case: SO8
Operating temperature: -55...125°C
Kind of package: reel; tape
Input offset current: 200nA
Input bias current: 0.5µA
Input offset voltage: 14mV
Voltage supply range: ± 1.8...12V DC
Slew rate: 1V/μs
Bandwidth: 2.2MHz
Number of channels: dual
Type of integrated circuit: operational amplifier
Produkt ist nicht verfügbar
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LM2902DTBR2G lm324-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; TSSOP14; 3÷32VDC; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: quad
Case: TSSOP14
Operating temperature: -40...105°C
Input offset voltage: 10mV
Voltage supply range: 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
Produkt ist nicht verfügbar
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LM2902EDR2G lm324-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; SO14; 3÷32VDC; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: quad
Case: SO14
Operating temperature: -40...105°C
Input offset voltage: 10mV
Voltage supply range: 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
Produkt ist nicht verfügbar
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LM2902VDR2G lm324-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; SO14; 3÷32VDC; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: quad
Case: SO14
Operating temperature: -40...125°C
Input offset voltage: 13mV
Voltage supply range: 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
Produkt ist nicht verfügbar
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LM2902VDTBR2G lm324-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; TSSOP14; 3÷32VDC; reel,tape; 200nA
Type of integrated circuit: operational amplifier
Mounting: SMT
Number of channels: quad
Case: TSSOP14
Operating temperature: -40...125°C
Input offset voltage: 13mV
Voltage supply range: 3...32V DC
Kind of package: reel; tape
Input offset current: 200nA
Produkt ist nicht verfügbar
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MC33274ADTBR2G mc33272a-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 24MHz; TSSOP14; ±1.5÷18VDC,3÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 24MHz
Mounting: SMT
Case: TSSOP14
Slew rate: 10V/μs
Operating temperature: -40...85°C
Input offset voltage: 1.8mV
Voltage supply range: ± 1.5...18V DC; 3...36V DC
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 80nA
Number of channels: quad
Produkt ist nicht verfügbar
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NVMTSC4D3N15MC nvmtsc4d3n15mc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 165A; Idm: 900A; 146W; TDFNW8
Kind of package: reel; tape
Pulsed drain current: 900A
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: TDFNW8
Gate charge: 79nC
On-state resistance: 4.45mΩ
Power dissipation: 146W
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 165A
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MC78M12ACDTRKG mc78m00-d.pdf
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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NCV78M12BDTRKG mc78m00-d.pdf
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 12V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 12V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Produkt ist nicht verfügbar
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J112-D26Z MMBFJ113-D.PDF
J112-D26Z
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA
Kind of package: tape
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 5mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 50Ω
Produkt ist nicht verfügbar
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J112-D27Z MMBFJ113-D.PDF
J112-D27Z
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA
Kind of package: tape
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 5mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 50Ω
Produkt ist nicht verfügbar
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J112-D74Z MMBFJ113-D.PDF
J112-D74Z
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 5mA; 0.625W; TO92; Igt: 50mA
Kind of package: Ammo Pack
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 5mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 50Ω
Produkt ist nicht verfügbar
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LM1117MPX-50NOPB lm1117-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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MC7805ACD2TR4G mc7800-d.pdf
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 5V; 1A; D2PAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Case: D2PAK
Output current: 1A
Number of channels: 1
Mounting: SMD
Kind of package: reel; tape
Output voltage: 5V
Kind of voltage regulator: fixed; linear
Produkt ist nicht verfügbar
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