| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.26 EUR |
| 10+ | 1.17 EUR |
| 100+ | 1.02 EUR |
| 500+ | 0.95 EUR |
| 1000+ | 0.9 EUR |
| 2500+ | 0.81 EUR |
| 5000+ | 0.77 EUR |
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Technische Details SVD2955T4G onsemi
Description: MOSFET P-CH 60V 12A DPAK, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: DPAK, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 55W (Tj), Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Weitere Produktangebote SVD2955T4G nach Preis ab 1.11 EUR bis 3.31 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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SVD2955T4G | onsemi |
 Description: MOSFET P-CH 60V 12A DPAKQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: DPAK Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 55W (Tj) Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 908 Stücke: Lieferzeit 10-14 Tag (e) |
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| SVD2955T4G |
|
Hersteller: onsemi
Description: MOSFET P-CH 60V 12A DPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 55W (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 60V 12A DPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 55W (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 908 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.31 EUR |
| 10+ | 2.09 EUR |
| 100+ | 1.4 EUR |
| 500+ | 1.11 EUR |