Foto | Bezeichnung | Hersteller | Beschreibung |
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HCPL0701 | ONSEMI |
![]() Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 2.5kV; SO8; HCPL07XX Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: Darlington Insulation voltage: 2.5kV CTR@If: 500-2600%@1.6mA Case: SO8 Turn-on time: 0.3µs Turn-off time: 1.6µs Manufacturer series: HCPL07XX |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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PZTA92T1G | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 300V Collector current: 0.5A Power dissipation: 1.5W Case: SOT223-4; TO261-4 Current gain: 40 Mounting: SMD Kind of package: reel; tape Frequency: 50MHz |
auf Bestellung 2738 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP52T1G | ONSEMI |
![]() ![]() Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 0.8W Case: SOT223 Mounting: SMD Kind of package: reel; tape |
auf Bestellung 2020 Stücke: Lieferzeit 14-21 Tag (e) |
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BSP52T3G | ONSEMI |
![]() Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 80V Collector current: 1A Power dissipation: 0.8W Case: SOT223 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SZMMSZ5240BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 10V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry |
auf Bestellung 2190 Stücke: Lieferzeit 14-21 Tag (e) |
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MMSZ5248BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB |
auf Bestellung 3259 Stücke: Lieferzeit 14-21 Tag (e) |
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SZMMSZ5248BT1G | ONSEMI |
![]() Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 18V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode Manufacturer series: MMSZ52xxB Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
CAT25040VI-GT3 | ONSEMI |
![]() Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; SOIC8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 4kb EEPROM Interface: SPI Memory organisation: 512x8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MURS320T3G | ONSEMI |
![]() Description: Diode: rectifying; SMD; 200V; 3A; 35ns; SMC; Ufmax: 0.89V; Ifsm: 100A Case: SMC Max. off-state voltage: 200V Max. forward voltage: 0.89V Load current: 3A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 100A Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: ultrafast switching Mounting: SMD |
auf Bestellung 808 Stücke: Lieferzeit 14-21 Tag (e) |
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FFSB0665A | ONSEMI |
![]() Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 9A; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Case: D2PAK Max. off-state voltage: 650V Load current: 9A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FFSB0665B | ONSEMI |
![]() Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 8A; reel,tape Technology: SiC Case: D2PAK Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FFSB0665B-F085 | ONSEMI |
![]() Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 8A; reel,tape Technology: SiC Case: D2PAK Mounting: SMD Kind of package: reel; tape Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Application: automotive industry Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MM3Z33VT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 33V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G |
auf Bestellung 870 Stücke: Lieferzeit 14-21 Tag (e) |
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SZMM3Z33VT1G | ONSEMI |
![]() Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOD323; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 33V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOD323 Semiconductor structure: single diode Manufacturer series: MM3ZxxT1G Application: automotive industry |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
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DF005S | ONSEMI |
![]() Description: Bridge rectifier: single-phase; 50V; If: 1.5A; Ifsm: 50A; SDIP 4L Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 1.5A Max. forward impulse current: 50A Case: SDIP 4L Electrical mounting: SMT Kind of package: reel; tape |
auf Bestellung 372 Stücke: Lieferzeit 14-21 Tag (e) |
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NTBG060N065SC1 | ONSEMI |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Pulsed drain current: 130A Power dissipation: 85W Case: D2PAK-7 Gate-source voltage: -5...18V On-state resistance: 50mΩ Mounting: SMD Gate charge: 74nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FCD600N60Z | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 7.4A; Idm: 22.2A; 89W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.4A Pulsed drain current: 22.2A Power dissipation: 89W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FCD600N65S3R0 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 15A; 54W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 6A Pulsed drain current: 15A Power dissipation: 54W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FDMS7660AS | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 83W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 42A Pulsed drain current: 150A Power dissipation: 83W Case: Power56 Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FDMS0310AS | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 22A Pulsed drain current: 100A Power dissipation: 41W Case: Power56 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 37nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NZL6V8AXV3T1G | ONSEMI |
![]() Description: Diode: TVS array; 6.8V; double,common anode; SC89; reel,tape Type of diode: TVS array Breakdown voltage: 6.8V Semiconductor structure: common anode; double Mounting: SMD Case: SC89 Max. off-state voltage: 4.5V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NZQA6V8AXV5T1G | ONSEMI |
![]() Description: Diode: TVS array; 6.46÷7.14V; 1.6A; 20W; common anode; SOT553; Ch: 4 Type of diode: TVS array Breakdown voltage: 6.46...7.14V Semiconductor structure: common anode Mounting: SMD Case: SOT553 Max. off-state voltage: 4.3V Kind of package: reel; tape Number of channels: 4 Max. forward impulse current: 1.6A Peak pulse power dissipation: 20W Version: ESD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NSVBAT54HT1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. forward impulse current: 0.6A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NCP785AH150T1G | ONSEMI |
![]() Description: IC: voltage regulator; linear,fixed; 1.5V; 10mA; SOT89; SMD; ±5% Mounting: SMD Number of channels: 1 Case: SOT89 Type of integrated circuit: voltage regulator Operating temperature: -40...85°C Output current: 10mA Output voltage: 1.5V Tolerance: ±5% Input voltage: 25...450V Kind of voltage regulator: fixed; linear Manufacturer series: NCP785A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
FSB50550US | ONSEMI |
![]() Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023 Number of channels: 6 Operating voltage: 13.5...16.5/0...400V DC Collector-emitter voltage: 500V Kind of integrated circuit: 3-phase motor controller; IPM Type of integrated circuit: driver Case: SPM5H-023 Topology: MOSFET three-phase bridge Technology: Motion SPM® 5 Mounting: SMD Operating temperature: -40...150°C Power dissipation: 14.5W Output current: 2A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NTMJS1D4N06CLTWG | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 262A; Idm: 900A; 90W; LFPAK8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 262A Pulsed drain current: 900A Power dissipation: 90W Case: LFPAK8 Gate-source voltage: ±20V On-state resistance: 1.3mΩ Mounting: SMD Gate charge: 103nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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FDN327N | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 20V Drain current: 2A Power dissipation: 0.5W Case: SuperSOT-3 Gate-source voltage: ±8V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 6.3nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level |
auf Bestellung 524 Stücke: Lieferzeit 14-21 Tag (e) |
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MC33071DR2G | ONSEMI |
![]() Description: IC: operational amplifier; 4.5MHz; Ch: 1; SO8; ±1.5÷22VDC,3÷44VDC Type of integrated circuit: operational amplifier Bandwidth: 4.5MHz Mounting: SMT Number of channels: 1 Case: SO8 Slew rate: 13V/μs Operating temperature: -40...85°C Input offset voltage: 7mV Voltage supply range: ± 1.5...22V DC; 3...44V DC Kind of package: reel; tape Input bias current: 0.7µA Input offset current: 300nA |
auf Bestellung 2349 Stücke: Lieferzeit 14-21 Tag (e) |
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FDN340P | ONSEMI |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -10A; 0.5W Type of transistor: P-MOSFET Technology: PowerTrench® Case: SuperSOT-3 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -10A Drain current: -2A Gate charge: 10nC On-state resistance: 0.11Ω Power dissipation: 0.5W Gate-source voltage: ±8V Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD |
auf Bestellung 3166 Stücke: Lieferzeit 14-21 Tag (e) |
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TIP30CG | ONSEMI |
![]() Description: Transistor: PNP; bipolar; 100V; 1A; 30W; TO220AB Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 30W Case: TO220AB Current gain: 15...75 Mounting: THT Kind of package: tube Frequency: 3MHz |
auf Bestellung 81 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86550 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 148A; Idm: 1021A; 156W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 148A Pulsed drain current: 1021A Power dissipation: 156W Case: Power56 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 154nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MBR0520L | ONSEMI |
![]() Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape Type of diode: Schottky switching Case: SOD123 Mounting: SMD Max. off-state voltage: 20V Load current: 0.5A Semiconductor structure: single diode Max. forward impulse current: 5.5A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
NTP067N65S3H | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 266W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 40A Pulsed drain current: 112A Power dissipation: 266W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 67mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NTP125N60S5H | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 77A; 152W; TO220-3 Polarisation: unipolar Gate charge: 37.3nC On-state resistance: 0.125Ω Drain current: 22A Gate-source voltage: ±30V Power dissipation: 152W Pulsed drain current: 77A Case: TO220-3 Drain-source voltage: 600V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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1N4741ATR | ONSEMI |
![]() Description: Diode: Zener; 1W; 11V; reel,tape; DO41; single diode; 5uA; 1N47xxA Type of diode: Zener Power dissipation: 1W Zener voltage: 11V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: 1N47xxA Kind of package: reel; tape |
auf Bestellung 2591 Stücke: Lieferzeit 14-21 Tag (e) |
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NCP551SN50T1G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 10mA; TSOP5; SMD; ±2% Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.15V Output voltage: 5V Output current: 10mA Case: TSOP5 Mounting: SMD Manufacturer series: NCP551 Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 12V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NCP551SN27T1G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.7V; 10mA; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.15V Output voltage: 2.7V Output current: 10mA Case: TSOP5 Mounting: SMD Manufacturer series: NCP551 Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 12V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NCP551SN25T1G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 10mA; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.22V Output voltage: 2.5V Output current: 10mA Case: TSOP5 Mounting: SMD Manufacturer series: NCP551 Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 12V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NCP551SN15T1G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 10mA; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.22V Output voltage: 1.5V Output current: 10mA Case: TSOP5 Mounting: SMD Manufacturer series: NCP551 Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 12V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NCP551SN18T1G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.22V Output voltage: 1.8V Output current: 0.15A Case: TSOP5 Mounting: SMD Manufacturer series: NCP551 Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.8...12V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
NCP551SN28T1G | ONSEMI |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 10mA; TSOP5; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.15V Output voltage: 2.8V Output current: 10mA Case: TSOP5 Mounting: SMD Manufacturer series: NCP551 Operating temperature: -40...85°C Tolerance: ±2% Number of channels: 1 Input voltage: 12V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NTMFS4C020NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 370A; Idm: 900A; 161W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 370A Pulsed drain current: 900A Power dissipation: 161W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 670µΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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FQD2N60CTM-WS | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 1.14A; Idm: 7.6A; 44W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 1.14A Pulsed drain current: 7.6A Power dissipation: 44W Case: DPAK Gate-source voltage: ±30V On-state resistance: 4.7Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MC74VHC540DTR2G | ONSEMI |
![]() Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; VHC Type of integrated circuit: digital Kind of integrated circuit: buffer; inverting; line driver Number of channels: 8 Mounting: SMD Case: TSSOP20 Supply voltage: 2...5.5V DC Quiescent current: 40µA Kind of output: 3-state Kind of package: reel; tape Manufacturer series: VHC Technology: CMOS Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
MC74VHC540DWR2G | ONSEMI |
![]() Description: IC: digital; bus buffer,octal,inverting; Ch: 8; CMOS; SMD; SOIC20 Type of integrated circuit: digital Kind of integrated circuit: bus buffer; inverting; octal Number of channels: 8 Technology: CMOS Mounting: SMD Case: SOIC20 Supply voltage: 2...5.5V DC Family: VHC Kind of package: reel; tape Operating temperature: -55...125°C Manufacturer series: VHC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NCP43080ADR2G | ONSEMI |
![]() Description: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC Type of integrated circuit: PMIC Output current: 4...8A Frequency: 1MHz Mounting: SMD Case: SO8 Topology: flyback; forward Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.95...37V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
NCP43080AMTTWG | ONSEMI |
![]() Description: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC Type of integrated circuit: PMIC Output current: 4...8A Frequency: 1MHz Mounting: SMD Case: WDFN8 Topology: flyback; forward Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.95...37V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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NCP43080DDR2G | ONSEMI |
![]() Description: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC Type of integrated circuit: PMIC Output current: 4...8A Frequency: 1MHz Mounting: SMD Case: SO8 Topology: flyback; forward Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.95...37V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
NCP43080DMTTWG | ONSEMI |
![]() Description: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC Type of integrated circuit: PMIC Output current: 4...8A Frequency: 1MHz Mounting: SMD Case: WDFN8 Topology: flyback; forward Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 3.95...37V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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MBRS240LT3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape Case: SMB Max. off-state voltage: 40V Max. load current: 4A Max. forward voltage: 0.55V Load current: 2A Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD |
auf Bestellung 1727 Stücke: Lieferzeit 14-21 Tag (e) |
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MBRM140T1G | ONSEMI |
![]() Description: Diode: Schottky rectifying; POWERMITE; SMD; 40V; 1A; reel,tape Max. forward voltage: 0.88V Mounting: SMD Max. load current: 2A Max. off-state voltage: 40V Kind of package: reel; tape Type of diode: Schottky rectifying Case: POWERMITE Max. forward impulse current: 50A Semiconductor structure: single diode Load current: 1A |
auf Bestellung 4215 Stücke: Lieferzeit 14-21 Tag (e) |
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RB751S40T1G | ONSEMI |
![]() Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Max. forward impulse current: 0.5A Kind of package: reel; tape |
auf Bestellung 2170 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR4170NT1G | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.48W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.7A Power dissipation: 0.48W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 55mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2505 Stücke: Lieferzeit 14-21 Tag (e) |
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NC7WZ16P6X | ONSEMI |
![]() Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC70-6; -40÷85°C Mounting: SMD Operating temperature: -40...85°C Kind of integrated circuit: buffer; non-inverting Type of integrated circuit: digital Quiescent current: 10µA Supply voltage: 1.65...5.5V DC Number of channels: 2 Kind of package: reel; tape Case: SC70-6 |
auf Bestellung 2208 Stücke: Lieferzeit 14-21 Tag (e) |
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HCPL2611 | ONSEMI |
![]() Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 10Mbps; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: Schmitt trigger Transfer rate: 10Mbps Case: DIP8 Turn-on time: 50ns Turn-off time: 12ns Slew rate: 2.5kV/μs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MBRS1540T3G | ONSEMI |
![]() Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1.5A; reel,tape Semiconductor structure: single diode Case: SMB Mounting: SMD Type of diode: Schottky rectifying Kind of package: reel; tape Max. forward voltage: 0.54V Load current: 1.5A Max. load current: 3A Max. off-state voltage: 40V |
auf Bestellung 2033 Stücke: Lieferzeit 14-21 Tag (e) |
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FDN5630 | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 0.5W; SuperSOT-3 Power dissipation: 0.5W Mounting: SMD Kind of package: reel; tape Case: SuperSOT-3 Drain-source voltage: 60V Drain current: 1.7A On-state resistance: 0.18Ω Type of transistor: N-MOSFET Polarisation: unipolar Features of semiconductor devices: logic level Gate charge: 10nC Technology: PowerTrench® Kind of channel: enhancement Gate-source voltage: ±20V |
auf Bestellung 3810 Stücke: Lieferzeit 14-21 Tag (e) |
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NTP150N65S3HF | ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 192W; TO220-3 Type of transistor: N-MOSFET Power dissipation: 192W Case: TO220-3 Mounting: THT Gate charge: 43nC Kind of package: tube On-state resistance: 0.15Ω Drain current: 24A Gate-source voltage: ±30V Pulsed drain current: 60A Drain-source voltage: 650V Kind of channel: enhancement Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
1N5919BG | ONSEMI |
![]() Description: Diode: Zener; 3W; 5.6V; bulk; CASE59; single diode; 5uA; 1N59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 5.6V Kind of package: bulk Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 5µA Manufacturer series: 1N59xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
NSVJ5908DSG5T1G | ONSEMI |
![]() Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.3W; MCPH5; common source Application: automotive industry Semiconductor structure: common source Type of transistor: N-JFET Mounting: SMD Gate-source voltage: -15V Drain current: 10mA Gate current: 10mA Power dissipation: 0.3W Drain-source voltage: 15V Case: MCPH5 Polarisation: unipolar Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
HCPL0701 |
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Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 2.5kV; SO8; HCPL07XX
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 2.5kV
CTR@If: 500-2600%@1.6mA
Case: SO8
Turn-on time: 0.3µs
Turn-off time: 1.6µs
Manufacturer series: HCPL07XX
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; 2.5kV; SO8; HCPL07XX
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: Darlington
Insulation voltage: 2.5kV
CTR@If: 500-2600%@1.6mA
Case: SO8
Turn-on time: 0.3µs
Turn-off time: 1.6µs
Manufacturer series: HCPL07XX
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 3.98 EUR |
PZTA92T1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 0.5A; 1.5W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 0.5A
Power dissipation: 1.5W
Case: SOT223-4; TO261-4
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Frequency: 50MHz
auf Bestellung 2738 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
129+ | 0.56 EUR |
261+ | 0.27 EUR |
315+ | 0.23 EUR |
343+ | 0.21 EUR |
455+ | 0.16 EUR |
481+ | 0.15 EUR |
BSP52T1G | ![]() |
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Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 2020 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
103+ | 0.7 EUR |
138+ | 0.52 EUR |
350+ | 0.2 EUR |
371+ | 0.19 EUR |
BSP52T3G |
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Hersteller: ONSEMI
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 0.8W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 0.8W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SZMMSZ5240BT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 10V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
auf Bestellung 2190 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
455+ | 0.16 EUR |
556+ | 0.13 EUR |
625+ | 0.11 EUR |
770+ | 0.093 EUR |
807+ | 0.089 EUR |
926+ | 0.077 EUR |
981+ | 0.073 EUR |
MMSZ5248BT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 3259 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
820+ | 0.087 EUR |
1244+ | 0.057 EUR |
1471+ | 0.049 EUR |
2825+ | 0.025 EUR |
2995+ | 0.024 EUR |
SZMMSZ5248BT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 18V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 18V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
CAT25040VI-GT3 |
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Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: SPI
Memory organisation: 512x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 4kbEEPROM; SPI; 512x8bit; 1.8÷5.5V; 20MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 4kb EEPROM
Interface: SPI
Memory organisation: 512x8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MURS320T3G |
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Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; SMC; Ufmax: 0.89V; Ifsm: 100A
Case: SMC
Max. off-state voltage: 200V
Max. forward voltage: 0.89V
Load current: 3A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 100A
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Mounting: SMD
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 35ns; SMC; Ufmax: 0.89V; Ifsm: 100A
Case: SMC
Max. off-state voltage: 200V
Max. forward voltage: 0.89V
Load current: 3A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 100A
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: ultrafast switching
Mounting: SMD
auf Bestellung 808 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
114+ | 0.63 EUR |
160+ | 0.45 EUR |
204+ | 0.35 EUR |
218+ | 0.33 EUR |
350+ | 0.2 EUR |
371+ | 0.19 EUR |
FFSB0665A |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 9A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: D2PAK
Max. off-state voltage: 650V
Load current: 9A
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 9A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Case: D2PAK
Max. off-state voltage: 650V
Load current: 9A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FFSB0665B |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 8A; reel,tape
Technology: SiC
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 8A; reel,tape
Technology: SiC
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FFSB0665B-F085 |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 8A; reel,tape
Technology: SiC
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Application: automotive industry
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 8A; reel,tape
Technology: SiC
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Application: automotive industry
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MM3Z33VT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
auf Bestellung 870 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
528+ | 0.14 EUR |
794+ | 0.09 EUR |
870+ | 0.082 EUR |
SZMM3Z33VT1G |
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Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
Manufacturer series: MM3ZxxT1G
Application: automotive industry
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
21+ | 3.4 EUR |
DF005S |
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Hersteller: ONSEMI
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; 50V; If: 1.5A; Ifsm: 50A; SDIP 4L
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 1.5A
Max. forward impulse current: 50A
Case: SDIP 4L
Electrical mounting: SMT
Kind of package: reel; tape
auf Bestellung 372 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
100+ | 0.72 EUR |
115+ | 0.62 EUR |
163+ | 0.44 EUR |
173+ | 0.41 EUR |
NTBG060N065SC1 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Pulsed drain current: 130A
Power dissipation: 85W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 33A; Idm: 130A; 85W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Pulsed drain current: 130A
Power dissipation: 85W
Case: D2PAK-7
Gate-source voltage: -5...18V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FCD600N60Z |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.4A; Idm: 22.2A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.4A
Pulsed drain current: 22.2A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.4A; Idm: 22.2A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.4A
Pulsed drain current: 22.2A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FCD600N65S3R0 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 15A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 15A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; Idm: 15A; 54W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 15A
Power dissipation: 54W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDMS7660AS |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Pulsed drain current: 150A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 42A; Idm: 150A; 83W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 42A
Pulsed drain current: 150A
Power dissipation: 83W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3.1mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDMS0310AS |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 100A
Power dissipation: 41W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 22A; Idm: 100A; 41W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 22A
Pulsed drain current: 100A
Power dissipation: 41W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhancement
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NZL6V8AXV3T1G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; double,common anode; SC89; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SC89
Max. off-state voltage: 4.5V
Kind of package: reel; tape
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; double,common anode; SC89; reel,tape
Type of diode: TVS array
Breakdown voltage: 6.8V
Semiconductor structure: common anode; double
Mounting: SMD
Case: SC89
Max. off-state voltage: 4.5V
Kind of package: reel; tape
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NZQA6V8AXV5T1G |
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Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 1.6A; 20W; common anode; SOT553; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.46...7.14V
Semiconductor structure: common anode
Mounting: SMD
Case: SOT553
Max. off-state voltage: 4.3V
Kind of package: reel; tape
Number of channels: 4
Max. forward impulse current: 1.6A
Peak pulse power dissipation: 20W
Version: ESD
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 1.6A; 20W; common anode; SOT553; Ch: 4
Type of diode: TVS array
Breakdown voltage: 6.46...7.14V
Semiconductor structure: common anode
Mounting: SMD
Case: SOT553
Max. off-state voltage: 4.3V
Kind of package: reel; tape
Number of channels: 4
Max. forward impulse current: 1.6A
Peak pulse power dissipation: 20W
Version: ESD
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NSVBAT54HT1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Application: automotive industry
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NCP785AH150T1G |
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Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 1.5V; 10mA; SOT89; SMD; ±5%
Mounting: SMD
Number of channels: 1
Case: SOT89
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 10mA
Output voltage: 1.5V
Tolerance: ±5%
Input voltage: 25...450V
Kind of voltage regulator: fixed; linear
Manufacturer series: NCP785A
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 1.5V; 10mA; SOT89; SMD; ±5%
Mounting: SMD
Number of channels: 1
Case: SOT89
Type of integrated circuit: voltage regulator
Operating temperature: -40...85°C
Output current: 10mA
Output voltage: 1.5V
Tolerance: ±5%
Input voltage: 25...450V
Kind of voltage regulator: fixed; linear
Manufacturer series: NCP785A
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FSB50550US |
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Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023
Number of channels: 6
Operating voltage: 13.5...16.5/0...400V DC
Collector-emitter voltage: 500V
Kind of integrated circuit: 3-phase motor controller; IPM
Type of integrated circuit: driver
Case: SPM5H-023
Topology: MOSFET three-phase bridge
Technology: Motion SPM® 5
Mounting: SMD
Operating temperature: -40...150°C
Power dissipation: 14.5W
Output current: 2A
Category: Motor and PWM drivers
Description: IC: driver; MOSFET three-phase bridge; Motion SPM® 5; SPM5H-023
Number of channels: 6
Operating voltage: 13.5...16.5/0...400V DC
Collector-emitter voltage: 500V
Kind of integrated circuit: 3-phase motor controller; IPM
Type of integrated circuit: driver
Case: SPM5H-023
Topology: MOSFET three-phase bridge
Technology: Motion SPM® 5
Mounting: SMD
Operating temperature: -40...150°C
Power dissipation: 14.5W
Output current: 2A
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NTMJS1D4N06CLTWG |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 262A; Idm: 900A; 90W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 262A
Pulsed drain current: 900A
Power dissipation: 90W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 262A; Idm: 900A; 90W; LFPAK8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 262A
Pulsed drain current: 900A
Power dissipation: 90W
Case: LFPAK8
Gate-source voltage: ±20V
On-state resistance: 1.3mΩ
Mounting: SMD
Gate charge: 103nC
Kind of package: reel; tape
Kind of channel: enhancement
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FDN327N |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; 0.5W; SuperSOT-3
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2A
Power dissipation: 0.5W
Case: SuperSOT-3
Gate-source voltage: ±8V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 6.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 524 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
125+ | 0.57 EUR |
173+ | 0.41 EUR |
203+ | 0.35 EUR |
295+ | 0.24 EUR |
363+ | 0.2 EUR |
382+ | 0.19 EUR |
500+ | 0.18 EUR |
MC33071DR2G |
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Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Number of channels: 1
Case: SO8
Slew rate: 13V/μs
Operating temperature: -40...85°C
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4.5MHz; Ch: 1; SO8; ±1.5÷22VDC,3÷44VDC
Type of integrated circuit: operational amplifier
Bandwidth: 4.5MHz
Mounting: SMT
Number of channels: 1
Case: SO8
Slew rate: 13V/μs
Operating temperature: -40...85°C
Input offset voltage: 7mV
Voltage supply range: ± 1.5...22V DC; 3...44V DC
Kind of package: reel; tape
Input bias current: 0.7µA
Input offset current: 300nA
auf Bestellung 2349 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
66+ | 1.09 EUR |
108+ | 0.66 EUR |
129+ | 0.55 EUR |
140+ | 0.51 EUR |
148+ | 0.48 EUR |
FDN340P |
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Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -10A; 0.5W
Type of transistor: P-MOSFET
Technology: PowerTrench®
Case: SuperSOT-3
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -10A
Drain current: -2A
Gate charge: 10nC
On-state resistance: 0.11Ω
Power dissipation: 0.5W
Gate-source voltage: ±8V
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; Idm: -10A; 0.5W
Type of transistor: P-MOSFET
Technology: PowerTrench®
Case: SuperSOT-3
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -10A
Drain current: -2A
Gate charge: 10nC
On-state resistance: 0.11Ω
Power dissipation: 0.5W
Gate-source voltage: ±8V
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
auf Bestellung 3166 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
157+ | 0.46 EUR |
233+ | 0.31 EUR |
286+ | 0.25 EUR |
332+ | 0.22 EUR |
374+ | 0.19 EUR |
544+ | 0.13 EUR |
575+ | 0.12 EUR |
TIP30CG |
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Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 30W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 1A; 30W; TO220AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 30W
Case: TO220AB
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 81 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
77+ | 0.93 EUR |
81+ | 0.89 EUR |
FDMS86550 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 148A; Idm: 1021A; 156W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 148A
Pulsed drain current: 1021A
Power dissipation: 156W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 154nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 148A; Idm: 1021A; 156W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 148A
Pulsed drain current: 1021A
Power dissipation: 156W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.6mΩ
Mounting: SMD
Gate charge: 154nC
Kind of package: reel; tape
Kind of channel: enhancement
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MBR0520L |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 20V; 0.5A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 20V
Load current: 0.5A
Semiconductor structure: single diode
Max. forward impulse current: 5.5A
Kind of package: reel; tape
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NTP067N65S3H |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 266W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 112A
Power dissipation: 266W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 40A; Idm: 112A; 266W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 40A
Pulsed drain current: 112A
Power dissipation: 266W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 67mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhancement
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NTP125N60S5H |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 77A; 152W; TO220-3
Polarisation: unipolar
Gate charge: 37.3nC
On-state resistance: 0.125Ω
Drain current: 22A
Gate-source voltage: ±30V
Power dissipation: 152W
Pulsed drain current: 77A
Case: TO220-3
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 77A; 152W; TO220-3
Polarisation: unipolar
Gate charge: 37.3nC
On-state resistance: 0.125Ω
Drain current: 22A
Gate-source voltage: ±30V
Power dissipation: 152W
Pulsed drain current: 77A
Case: TO220-3
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Mounting: THT
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1N4741ATR |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 11V; reel,tape; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 11V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
Kind of package: reel; tape
Category: THT Zener diodes
Description: Diode: Zener; 1W; 11V; reel,tape; DO41; single diode; 5uA; 1N47xxA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 11V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N47xxA
Kind of package: reel; tape
auf Bestellung 2591 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.2 EUR |
511+ | 0.14 EUR |
603+ | 0.12 EUR |
879+ | 0.081 EUR |
1437+ | 0.05 EUR |
1520+ | 0.047 EUR |
NCP551SN50T1G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 10mA; TSOP5; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 5V
Output current: 10mA
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 10mA; TSOP5; SMD; ±2%
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 5V
Output current: 10mA
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
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NCP551SN27T1G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.7V; 10mA; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 2.7V
Output current: 10mA
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.7V; 10mA; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 2.7V
Output current: 10mA
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
Produkt ist nicht verfügbar
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NCP551SN25T1G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 10mA; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.22V
Output voltage: 2.5V
Output current: 10mA
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 10mA; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.22V
Output voltage: 2.5V
Output current: 10mA
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP551SN15T1G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 10mA; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.22V
Output voltage: 1.5V
Output current: 10mA
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 10mA; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.22V
Output voltage: 1.5V
Output current: 10mA
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
Produkt ist nicht verfügbar
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NCP551SN18T1G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.22V
Output voltage: 1.8V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.8...12V
Kind of package: reel; tape
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.15A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.22V
Output voltage: 1.8V
Output current: 0.15A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.8...12V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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Stück im Wert von UAH
NCP551SN28T1G |
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Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 10mA; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 2.8V
Output current: 10mA
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 10mA; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.15V
Output voltage: 2.8V
Output current: 10mA
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP551
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 12V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTMFS4C020NT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 370A; Idm: 900A; 161W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 370A
Pulsed drain current: 900A
Power dissipation: 161W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 670µΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 370A; Idm: 900A; 161W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 370A
Pulsed drain current: 900A
Power dissipation: 161W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 670µΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
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FQD2N60CTM-WS |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.14A; Idm: 7.6A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.14A
Pulsed drain current: 7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 1.14A; Idm: 7.6A; 44W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 1.14A
Pulsed drain current: 7.6A
Power dissipation: 44W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 4.7Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
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MC74VHC540DTR2G |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: VHC
Technology: CMOS
Operating temperature: -55...125°C
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,inverting,line driver; Ch: 8; CMOS; SMD; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverting; line driver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...5.5V DC
Quiescent current: 40µA
Kind of output: 3-state
Kind of package: reel; tape
Manufacturer series: VHC
Technology: CMOS
Operating temperature: -55...125°C
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MC74VHC540DWR2G |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal,inverting; Ch: 8; CMOS; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; inverting; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Supply voltage: 2...5.5V DC
Family: VHC
Kind of package: reel; tape
Operating temperature: -55...125°C
Manufacturer series: VHC
Category: Buffers, transceivers, drivers
Description: IC: digital; bus buffer,octal,inverting; Ch: 8; CMOS; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: bus buffer; inverting; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Supply voltage: 2...5.5V DC
Family: VHC
Kind of package: reel; tape
Operating temperature: -55...125°C
Manufacturer series: VHC
Produkt ist nicht verfügbar
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NCP43080ADR2G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Produkt ist nicht verfügbar
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NCP43080AMTTWG |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: WDFN8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: WDFN8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Produkt ist nicht verfügbar
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NCP43080DDR2G |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: SO8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Produkt ist nicht verfügbar
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NCP43080DMTTWG |
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Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: WDFN8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; WDFN8; flyback,forward; 3.95÷37VDC
Type of integrated circuit: PMIC
Output current: 4...8A
Frequency: 1MHz
Mounting: SMD
Case: WDFN8
Topology: flyback; forward
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 3.95...37V DC
Produkt ist nicht verfügbar
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Stück im Wert von UAH
MBRS240LT3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Case: SMB
Max. off-state voltage: 40V
Max. load current: 4A
Max. forward voltage: 0.55V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 2A; reel,tape
Case: SMB
Max. off-state voltage: 40V
Max. load current: 4A
Max. forward voltage: 0.55V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
auf Bestellung 1727 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
193+ | 0.37 EUR |
254+ | 0.28 EUR |
278+ | 0.26 EUR |
302+ | 0.24 EUR |
325+ | 0.22 EUR |
556+ | 0.13 EUR |
589+ | 0.12 EUR |
MBRM140T1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 40V; 1A; reel,tape
Max. forward voltage: 0.88V
Mounting: SMD
Max. load current: 2A
Max. off-state voltage: 40V
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: POWERMITE
Max. forward impulse current: 50A
Semiconductor structure: single diode
Load current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; POWERMITE; SMD; 40V; 1A; reel,tape
Max. forward voltage: 0.88V
Mounting: SMD
Max. load current: 2A
Max. off-state voltage: 40V
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: POWERMITE
Max. forward impulse current: 50A
Semiconductor structure: single diode
Load current: 1A
auf Bestellung 4215 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
173+ | 0.41 EUR |
247+ | 0.29 EUR |
307+ | 0.23 EUR |
334+ | 0.21 EUR |
439+ | 0.16 EUR |
463+ | 0.15 EUR |
RB751S40T1G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
auf Bestellung 2170 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
556+ | 0.13 EUR |
747+ | 0.096 EUR |
1029+ | 0.069 EUR |
1183+ | 0.06 EUR |
1613+ | 0.044 EUR |
2170+ | 0.033 EUR |
NTR4170NT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.48W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.7A; 0.48W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.7A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 55mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2505 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
148+ | 0.49 EUR |
234+ | 0.31 EUR |
311+ | 0.23 EUR |
350+ | 0.2 EUR |
432+ | 0.17 EUR |
455+ | 0.16 EUR |
1000+ | 0.15 EUR |
NC7WZ16P6X |
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Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC70-6; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of integrated circuit: buffer; non-inverting
Type of integrated circuit: digital
Quiescent current: 10µA
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of package: reel; tape
Case: SC70-6
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; SMD; SC70-6; -40÷85°C
Mounting: SMD
Operating temperature: -40...85°C
Kind of integrated circuit: buffer; non-inverting
Type of integrated circuit: digital
Quiescent current: 10µA
Supply voltage: 1.65...5.5V DC
Number of channels: 2
Kind of package: reel; tape
Case: SC70-6
auf Bestellung 2208 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
358+ | 0.2 EUR |
521+ | 0.14 EUR |
633+ | 0.11 EUR |
1092+ | 0.065 EUR |
1367+ | 0.052 EUR |
1558+ | 0.046 EUR |
1645+ | 0.043 EUR |
HCPL2611 |
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Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 10Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Transfer rate: 10Mbps
Case: DIP8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 2.5kV/μs
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: Schmitt trigger; 10Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: Schmitt trigger
Transfer rate: 10Mbps
Case: DIP8
Turn-on time: 50ns
Turn-off time: 12ns
Slew rate: 2.5kV/μs
Produkt ist nicht verfügbar
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Stück im Wert von UAH
MBRS1540T3G |
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Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1.5A; reel,tape
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Type of diode: Schottky rectifying
Kind of package: reel; tape
Max. forward voltage: 0.54V
Load current: 1.5A
Max. load current: 3A
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1.5A; reel,tape
Semiconductor structure: single diode
Case: SMB
Mounting: SMD
Type of diode: Schottky rectifying
Kind of package: reel; tape
Max. forward voltage: 0.54V
Load current: 1.5A
Max. load current: 3A
Max. off-state voltage: 40V
auf Bestellung 2033 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
112+ | 0.64 EUR |
146+ | 0.49 EUR |
162+ | 0.44 EUR |
178+ | 0.4 EUR |
274+ | 0.26 EUR |
290+ | 0.25 EUR |
1000+ | 0.24 EUR |
FDN5630 |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 0.5W; SuperSOT-3
Power dissipation: 0.5W
Mounting: SMD
Kind of package: reel; tape
Case: SuperSOT-3
Drain-source voltage: 60V
Drain current: 1.7A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 10nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 1.7A; 0.5W; SuperSOT-3
Power dissipation: 0.5W
Mounting: SMD
Kind of package: reel; tape
Case: SuperSOT-3
Drain-source voltage: 60V
Drain current: 1.7A
On-state resistance: 0.18Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Features of semiconductor devices: logic level
Gate charge: 10nC
Technology: PowerTrench®
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 3810 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
136+ | 0.53 EUR |
165+ | 0.43 EUR |
220+ | 0.33 EUR |
358+ | 0.2 EUR |
379+ | 0.19 EUR |
1000+ | 0.18 EUR |
NTP150N65S3HF |
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Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 192W; TO220-3
Type of transistor: N-MOSFET
Power dissipation: 192W
Case: TO220-3
Mounting: THT
Gate charge: 43nC
Kind of package: tube
On-state resistance: 0.15Ω
Drain current: 24A
Gate-source voltage: ±30V
Pulsed drain current: 60A
Drain-source voltage: 650V
Kind of channel: enhancement
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 192W; TO220-3
Type of transistor: N-MOSFET
Power dissipation: 192W
Case: TO220-3
Mounting: THT
Gate charge: 43nC
Kind of package: tube
On-state resistance: 0.15Ω
Drain current: 24A
Gate-source voltage: ±30V
Pulsed drain current: 60A
Drain-source voltage: 650V
Kind of channel: enhancement
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
1N5919BG |
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Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 5.6V; bulk; CASE59; single diode; 5uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Kind of package: bulk
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N59xxB
Category: THT Zener diodes
Description: Diode: Zener; 3W; 5.6V; bulk; CASE59; single diode; 5uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Kind of package: bulk
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 5µA
Manufacturer series: 1N59xxB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NSVJ5908DSG5T1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.3W; MCPH5; common source
Application: automotive industry
Semiconductor structure: common source
Type of transistor: N-JFET
Mounting: SMD
Gate-source voltage: -15V
Drain current: 10mA
Gate current: 10mA
Power dissipation: 0.3W
Drain-source voltage: 15V
Case: MCPH5
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.3W; MCPH5; common source
Application: automotive industry
Semiconductor structure: common source
Type of transistor: N-JFET
Mounting: SMD
Gate-source voltage: -15V
Drain current: 10mA
Gate current: 10mA
Power dissipation: 0.3W
Drain-source voltage: 15V
Case: MCPH5
Polarisation: unipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH