FCP260N65S3 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 650V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.46 EUR |
| 10+ | 4.9 EUR |
| 50+ | 3.81 EUR |
| 100+ | 3.45 EUR |
| 500+ | 2.83 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details FCP260N65S3 onsemi
Description: MOSFET N-CH 650V 12A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 260mOhm @ 6A, 10V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 1.2mA, Supplier Device Package: TO-220-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 400.
Weitere Produktangebote FCP260N65S3 nach Preis ab 2.95 EUR bis 8.32 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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FCP260N65S3 | onsemi |
MOSFETs SUPERFET3 650V TO220 PKG |
auf Bestellung 681 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP260N65S3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Power dissipation: 90W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 30A |
auf Bestellung 47 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FCP260N65S3 |
|
Hersteller: onsemi
MOSFETs SUPERFET3 650V TO220 PKG
MOSFETs SUPERFET3 650V TO220 PKG
auf Bestellung 681 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.32 EUR |
| 10+ | 5.46 EUR |
| 100+ | 4.06 EUR |
| 500+ | 3.42 EUR |
| 1000+ | 3.17 EUR |
| 2500+ | 2.95 EUR |
| FCP260N65S3 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 30A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 90W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 30A
auf Bestellung 47 Stücke:
Lieferzeit 14-21 Tag (e)