ISL9V3040D3ST-F085C ON Semiconductor
Hersteller: ON SemiconductorTrans IGBT Chip N-CH 390V 21A 150W 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.09 EUR |
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Technische Details ISL9V3040D3ST-F085C ON Semiconductor
Description: IGBT 430V 21A TO-252, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Logic, Reverse Recovery Time (trr): 7 µs, Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A, Supplier Device Package: TO-252 (DPAK), Td (on/off) @ 25°C: -/4µs, Test Condition: 300V, 1000Ohm, 5V, Gate Charge: 17 nC, Part Status: Active, Current - Collector (Ic) (Max): 21 A, Voltage - Collector Emitter Breakdown (Max): 430 V, Power - Max: 150 W.
Weitere Produktangebote ISL9V3040D3ST-F085C nach Preis ab 1.07 EUR bis 3.94 EUR
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ISL9V3040D3ST-F085C | Hersteller : onsemi |
Description: IGBT 430V 21A TO-252Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Logic Reverse Recovery Time (trr): 7 µs Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A Supplier Device Package: TO-252 (DPAK) Td (on/off) @ 25°C: -/4µs Test Condition: 300V, 1000Ohm, 5V Gate Charge: 17 nC Part Status: Active Current - Collector (Ic) (Max): 21 A Voltage - Collector Emitter Breakdown (Max): 430 V Power - Max: 150 W |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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ISL9V3040D3ST-F085C | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 390V 21A 150W 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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ISL9V3040D3ST-F085C | Hersteller : onsemi |
Description: IGBT 430V 21A TO-252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Logic Reverse Recovery Time (trr): 7 µs Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 6A Supplier Device Package: TO-252 (DPAK) Td (on/off) @ 25°C: -/4µs Test Condition: 300V, 1000Ohm, 5V Gate Charge: 17 nC Part Status: Active Current - Collector (Ic) (Max): 21 A Voltage - Collector Emitter Breakdown (Max): 430 V Power - Max: 150 W |
auf Bestellung 4612 Stücke: Lieferzeit 10-14 Tag (e) |
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ISL9V3040D3ST-F085C | Hersteller : onsemi |
IGBTs ECOSPARK1 IGN-IGBT TO252 |
auf Bestellung 2749 Stücke: Lieferzeit 10-14 Tag (e) |
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| ISL9V3040D3ST-F085C | Hersteller : ON Semiconductor |
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auf Bestellung 4720 Stücke: Lieferzeit 21-28 Tag (e) |
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ISL9V3040D3ST-F085C | Hersteller : ON Semiconductor |
IGBT Chip, N-Channel Ignition |
Produkt ist nicht verfügbar |
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ISL9V3040D3ST-F085C | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 390V 21A 150W 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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| ISL9V3040D3ST-F085C | Hersteller : ONSEMI |
Category: SMD IGBT transistorsDescription: Transistor: IGBT; 400V; 17A; 150W; DPAK; Features: logic level; ESD Type of transistor: IGBT Collector-emitter voltage: 400V Collector current: 17A Power dissipation: 150W Case: DPAK Gate-emitter voltage: ±10V Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Features of semiconductor devices: logic level Application: ignition systems Version: ESD |
Produkt ist nicht verfügbar |
