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NVMYS014N06CLTWG ONSEMI nvmys014n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 185A; 12W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 185A
Power dissipation: 12W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVTFS024N06CTAG ONSEMI nvtfs024n06c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 112A; 14W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 112A
Power dissipation: 14W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMJST1D4N06CLTXG ONSEMI nvmjst1d4n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 198A; Idm: 900A; 58W; TCPAK10
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 198A
Pulsed drain current: 900A
Power dissipation: 58W
Case: TCPAK10
Gate-source voltage: ±20V
On-state resistance: 1.49mΩ
Mounting: SMD
Gate charge: 92.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NRTS30120MFST3G ONSEMI nrts30120mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 120V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Mounting: SMD
Max. off-state voltage: 120V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.73V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NRVTS30120MFST3G ONSEMI nrvts30120mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 120V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. load current: 60A
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MMSZ4680T1G MMSZ4680T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.2V; SMD; reel,tape; SOD123; single diode; 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 4µA
Manufacturer series: MMSZ4xxT1G
auf Bestellung 2929 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
610+0.12 EUR
695+0.1 EUR
1244+0.057 EUR
1799+0.04 EUR
1985+0.036 EUR
Mindestbestellmenge: 556
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GRUMC78L05ACDR2G ONSEMI Category: Unclassified
Description: GRUMC78L05ACDR2G
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.15 EUR
Mindestbestellmenge: 2500
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FQD12N20LTM-F085 FQD12N20LTM-F085 ONSEMI fqd12n20l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Application: automotive industry
Produkt ist nicht verfügbar
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DTA114EM3T5G ONSEMI dta114e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 35...60
Mounting: SMD
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 8000pcs.
Kind of transistor: BRT
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NSBA114EDP6T5G ONSEMI dta114ed-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 269mW
Case: SOT963
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 10kΩ
Kind of transistor: BRT
Produkt ist nicht verfügbar
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NSVDTA114EET1G ONSEMI dta114e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Application: automotive industry
Quantity in set/package: 3000pcs.
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NSVDTA114EM3T5G ONSEMI dta114e-d.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 35...60
Mounting: SMD
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Quantity in set/package: 8000pcs.
Kind of transistor: BRT
Kind of package: reel; tape
Produkt ist nicht verfügbar
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74ACT541SC 74ACT541SC ONSEMI 74act541-d.pdf FAIRS25848-1.pdf?t.download=true&u=5oefqw Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Manufacturer series: ACT
Kind of integrated circuit: buffer; line driver; non-inverting
auf Bestellung 1539 Stücke:
Lieferzeit 14-21 Tag (e)
36+2.03 EUR
57+1.27 EUR
103+0.7 EUR
109+0.66 EUR
1064+0.64 EUR
Mindestbestellmenge: 36
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FOD3120SV ONSEMI fod3120-d.pdf Category: Unclassified
Description: FOD3120SV
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.82 EUR
Mindestbestellmenge: 1000
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FOD3120TSV ONSEMI fod3120-d.pdf Category: Optocouplers - Unclassified
Description: FOD3120TSV
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.83 EUR
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FOD3184SDV ONSEMI fod3184-d.pdf Category: Optocouplers - Unclassified
Description: FOD3184SDV
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+1.06 EUR
Mindestbestellmenge: 1000
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GRUBAS40-04LT1G ONSEMI Category: Unclassified
Description: GRUBAS40-04LT1G
auf Bestellung 51000 Stücke:
Lieferzeit 14-21 Tag (e)
6000+0.032 EUR
Mindestbestellmenge: 6000
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FAN7688SJX ONSEMI fan7688-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SOP16; reel,tape
Type of integrated circuit: PMIC
Mounting: SMD
Case: SOP16
Kind of package: reel; tape
Produkt ist nicht verfügbar
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LMV324DTBR2G ONSEMI lmv321-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; TSSOP14; 2.7÷5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: quad
Case: TSSOP14
Slew rate: 1V/μs
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Input offset current: 1nA
Produkt ist nicht verfügbar
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LMV324DR2G ONSEMI lmv321-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; SO14; 2.7÷5VDC; reel,tape; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: quad
Case: SO14
Slew rate: 1V/μs
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Input offset current: 1nA
Produkt ist nicht verfügbar
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NCV33079DR2G ONSEMI mc33078-d.pdf Category: SMD operational amplifiers
Description: IC: operational amplifier; 16MHz; SO14; ±5÷18VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 16MHz
Mounting: SMT
Case: SO14
Slew rate: 7V/μs
Operating temperature: -40...85°C
Input offset voltage: 3.5mV
Voltage supply range: ± 5...18V DC
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 175nA
Number of channels: quad
Produkt ist nicht verfügbar
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NCP340MUTBG ONSEMI ncp340-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; uDFN4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: uDFN4
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 1.8...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Produkt ist nicht verfügbar
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J111-D26Z J111-D26Z ONSEMI MMBFJ113-D.PDF Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 20mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 30Ω
Kind of package: tape
Produkt ist nicht verfügbar
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J111-D74Z J111-D74Z ONSEMI MMBFJ113-D.PDF Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 20mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 30Ω
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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H11G1M H11G1M ONSEMI pVersion=0046&contRep=ZT&docId=E1C04D41A0D4AAF1A6F5005056AB5A8F&compId=H11G1.pdf?ci_sign=0c8401a19da9f7949bbb2844428e689ad0161ed1 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
Case: DIP6
Turn-on time: 5µs
Collector-emitter voltage: 100V
CTR@If: 100%@10mA
Turn-off time: 0.1ms
Produkt ist nicht verfügbar
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H11G1M H11G1M ONSEMI pVersion=0046&contRep=ZT&docId=E1C04D41A0D4AAF1A6F5005056AB5A8F&compId=H11G1.pdf?ci_sign=0c8401a19da9f7949bbb2844428e689ad0161ed1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C020DA40C40D6&compId=H11G1M.pdf?ci_sign=1dfe61e44bd2a3298cba20b310fb5d6f1e5d3afe Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; CTR@If: 100%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: DIP6
CTR@If: 100%@10mA
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.17 EUR
100+0.72 EUR
115+0.63 EUR
131+0.55 EUR
139+0.52 EUR
Mindestbestellmenge: 61
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H11G1SR2M H11G1SR2M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C020DA40D80D6&compId=H11G1SR2M.pdf?ci_sign=5422feba83a7372f2023a6017d827788afb0c2f9 Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; CTR@If: 100%@10mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: Gull wing 6
CTR@If: 100%@10mA
Produkt ist nicht verfügbar
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FCMT080N65S3 ONSEMI fcmt080n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 95A; 260W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 95A
Power dissipation: 260W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCMT180N65S3 ONSEMI fcmt180n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 139W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 42.5A
Power dissipation: 139W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCPF380N65FL1-F154 ONSEMI fcpf380n65fl1-f154-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.2A; Idm: 30.6A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
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74LCX125MTCX 74LCX125MTCX ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8D0F4C469E95EA&compId=74LCX125M.pdf?ci_sign=9bdf294189c519376e19ac6334c34946fe06ebdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 4
Case: TSSOP14
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2...3.6V DC
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
Manufacturer series: LCX
Quiescent current: 10µA
auf Bestellung 1950 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
182+0.39 EUR
194+0.37 EUR
212+0.34 EUR
222+0.32 EUR
269+0.27 EUR
285+0.25 EUR
Mindestbestellmenge: 132
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74LCX125MTC 74LCX125MTC ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8D0F4C469E95EA&compId=74LCX125M.pdf?ci_sign=9bdf294189c519376e19ac6334c34946fe06ebdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Manufacturer series: LCX
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Kind of output: 3-state
Quiescent current: 10µA
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
186+0.38 EUR
203+0.35 EUR
216+0.33 EUR
242+0.3 EUR
256+0.28 EUR
Mindestbestellmenge: 129
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BC847BWT1G BC847BWT1G ONSEMI bc846awt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 2728 Stücke:
Lieferzeit 14-21 Tag (e)
823+0.087 EUR
1191+0.06 EUR
1352+0.053 EUR
1786+0.04 EUR
2009+0.036 EUR
2552+0.028 EUR
2728+0.026 EUR
Mindestbestellmenge: 823
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MC74LVX125DR2G ONSEMI mc74lvx125-d.pdf Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.16 EUR
Mindestbestellmenge: 2500
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NSVBC847BLT3G ONSEMI bc846alt1-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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GRUBC857CLT1G ONSEMI Category: Unclassified
Description: GRUBC857CLT1G
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
6000+0.022 EUR
Mindestbestellmenge: 6000
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FDP025N06 ONSEMI fdp025n06-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 265A; Idm: 1060A; 395W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 265A
Pulsed drain current: 1060A
Power dissipation: 395W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTHL025N065SC1 ONSEMI nthl025n065sc1-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Produkt ist nicht verfügbar
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NTH4L025N065SC1 ONSEMI nth4l025n065sc1-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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NVH4L025N065SC1 ONSEMI nvh4l025n065sc1-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164C
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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NVMYS025N06CLTWG ONSEMI nvmys025n06cl-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 103A; 7.6W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 103A
Power dissipation: 7.6W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 27.5mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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RFD16N05LSM9A RFD16N05LSM9A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DED89819534745&compId=RFD16N05LSM.pdf?ci_sign=32c18ccd0ce4e1c084e81432ae4b32379f5f3710 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 16A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 16A
Power dissipation: 60W
Case: DPAK
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2252 Stücke:
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51+1.42 EUR
63+1.15 EUR
70+1.03 EUR
85+0.85 EUR
90+0.8 EUR
100+0.77 EUR
Mindestbestellmenge: 51
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RFD3055LESM9A RFD3055LESM9A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DEE558ACB94745&compId=RFD3055LESM.pdf?ci_sign=129cc0944e6a4e688008b2cf6f899e1a94afbadf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 0.107Ω
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 331 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.72 EUR
117+0.61 EUR
127+0.57 EUR
139+0.51 EUR
144+0.5 EUR
152+0.47 EUR
Mindestbestellmenge: 100
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BZG03C150G BZG03C150G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBA4BD31B544BBE0C7&compId=bzg03c15.pdf?ci_sign=b404193c4524a81d71071edef655dbc39cbbf2ff Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 150V; SMD; reel,tape; SMA; single diode; 1uA
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 150V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZG03C
Kind of package: reel; tape
auf Bestellung 5356 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
269+0.27 EUR
338+0.21 EUR
391+0.18 EUR
414+0.17 EUR
Mindestbestellmenge: 209
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BZG03C15G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBA4BD31B544BBE0C7&compId=bzg03c15.pdf?ci_sign=b404193c4524a81d71071edef655dbc39cbbf2ff Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 15V; SMD; reel,tape; SMA; single diode; 1uA
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZG03C
Kind of package: reel; tape
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NVBLS4D0N15MC ONSEMI nvbls4d0n15mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 187A; Idm: 900A; 158W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Case: H-PSOF8L
Kind of package: reel; tape
Mounting: SMD
Gate charge: 90.4nC
On-state resistance: 4.4mΩ
Power dissipation: 158W
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 187A
Pulsed drain current: 900A
Polarisation: unipolar
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LM211DR2G ONSEMI lm211-d.pdf Category: SMD comparators
Description: IC: comparator; Cmp: 1; 5÷30V; SMT; SO8; reel,tape; Iio: 1.7nA
Type of integrated circuit: comparator
Operating voltage: 5...30V
Mounting: SMT
Case: SO8
Operating temperature: -25...85°C
Input offset voltage: 3mV
Input bias current: 45nA
Kind of package: reel; tape
Input offset current: 1.7nA
Number of comparators: 1
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MC78M15BDTRKG ONSEMI mc78m00-d.pdf Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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NSR0320MW2T1G NSR0320MW2T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869A03A18B478469&compId=NSR0320MW2T1G.PDF?ci_sign=8142c45eea7cca95166e1e98a1b3041f167eab0d Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 23V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 23V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
auf Bestellung 16669 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
455+0.16 EUR
743+0.096 EUR
905+0.079 EUR
1534+0.047 EUR
1624+0.044 EUR
6000+0.042 EUR
Mindestbestellmenge: 313
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NSR0320MW2T3G ONSEMI nsr0320mw2t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 23V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 23V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 5A
Kind of package: reel; tape
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MC33039DR2G ONSEMI mc33039-d.pdf Category: Motor and PWM drivers
Description: IC: driver; brushless motor controller; SO8; 5.5÷9VDC
Mounting: SMD
Operating voltage: 5.5...9V DC
Operating temperature: -40...85°C
Kind of integrated circuit: brushless motor controller
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: driver
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SZBZX84C12LT3G ONSEMI bzx84c2v4lt1-d.pdf Category: SMD Zener diodes
Description: Diode: Zener
Type of diode: Zener
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.025 EUR
Mindestbestellmenge: 10000
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MARSZBZX84C12LT1G ONSEMI Category: Unclassified
Description: MARSZBZX84C12LT1G
auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)
6000+0.021 EUR
Mindestbestellmenge: 6000
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RSL10-SENSE-DB-GEVK ONSEMI RSL10_Sensor_Dev_Kit.pdf Category: Development kits - others
Description: Dev.kit: evaluation
Type of development kit: evaluation
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Programmers and development kits features: Bluetooth board
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RSL10-SENSE-GEVK ONSEMI RSL10_Sensor_Dev_Kit.pdf Category: Development kits - others
Description: Dev.kit: evaluation
Type of development kit: evaluation
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Programmers and development kits features: Bluetooth board
Produkt ist nicht verfügbar
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H11AV1AM H11AV1AM ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F4E6DB140C7&compId=H11AV1AM.pdf?ci_sign=5e699d109124f9bd1a092a03486bc4a351a41601 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Turn-off time: 15µs
Case: DIP6
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 100-300%@10mA
Type of optocoupler: optocoupler
Insulation voltage: 4.17kV
Mounting: THT
Kind of output: transistor
Turn-on time: 15µs
auf Bestellung 1667 Stücke:
Lieferzeit 14-21 Tag (e)
109+0.66 EUR
153+0.47 EUR
170+0.42 EUR
187+0.38 EUR
Mindestbestellmenge: 109
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H11AV1M H11AV1M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F4E6DB140C7&compId=H11AV1AM.pdf?ci_sign=5e699d109124f9bd1a092a03486bc4a351a41601 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Turn-off time: 15µs
Case: DIP6
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 100-300%@10mA
Type of optocoupler: optocoupler
Insulation voltage: 4.17kV
Mounting: THT
Kind of output: transistor
Turn-on time: 15µs
auf Bestellung 694 Stücke:
Lieferzeit 14-21 Tag (e)
73+0.99 EUR
112+0.64 EUR
129+0.56 EUR
137+0.52 EUR
Mindestbestellmenge: 73
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MC74VHC4051DR2G ONSEMI mc74vhc4051-d.pdf Category: Decoders, multiplexers, switches
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
2500+0.25 EUR
Mindestbestellmenge: 2500
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KSP10TA KSP10TA ONSEMI ksp10-d.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; RF; 25V; 0.35W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.35W
Case: TO92
Current gain: 60
Mounting: THT
Kind of package: Ammo Pack
Frequency: 650MHz
Produkt ist nicht verfügbar
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1N4936G 1N4936G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDF8FB87CB914A100D6&compId=1N4933_7.PDF?ci_sign=3be4f95dd660378c4c9ca5195cf5fa6d26cfbd92 Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Kind of package: bulk
Case: CASE59-10; DO41
Features of semiconductor devices: fast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Reverse recovery time: 200ns
Load current: 1A
Max. forward voltage: 1.2V
Max. off-state voltage: 0.4kV
Max. forward impulse current: 30A
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
290+0.24 EUR
Mindestbestellmenge: 290
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NVMYS014N06CLTWG nvmys014n06cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 185A; 12W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 185A
Power dissipation: 12W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVTFS024N06CTAG nvtfs024n06c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 112A; 14W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 24A
Pulsed drain current: 112A
Power dissipation: 14W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 22.6mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMJST1D4N06CLTXG nvmjst1d4n06cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 198A; Idm: 900A; 58W; TCPAK10
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 198A
Pulsed drain current: 900A
Power dissipation: 58W
Case: TCPAK10
Gate-source voltage: ±20V
On-state resistance: 1.49mΩ
Mounting: SMD
Gate charge: 92.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NRTS30120MFST3G nrts30120mfs-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 120V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5x6
Mounting: SMD
Max. off-state voltage: 120V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.73V
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
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NRVTS30120MFST3G nrvts30120mfs-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 120V; 30A; reel,tape
Type of diode: Schottky rectifying
Case: DFN5
Mounting: SMD
Max. off-state voltage: 120V
Load current: 30A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. load current: 60A
Max. forward impulse current: 0.3kA
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MMSZ4680T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a
MMSZ4680T1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.2V; SMD; reel,tape; SOD123; single diode; 4uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.2V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Leakage current: 4µA
Manufacturer series: MMSZ4xxT1G
auf Bestellung 2929 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
610+0.12 EUR
695+0.1 EUR
1244+0.057 EUR
1799+0.04 EUR
1985+0.036 EUR
Mindestbestellmenge: 556
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GRUMC78L05ACDR2G
Hersteller: ONSEMI
Category: Unclassified
Description: GRUMC78L05ACDR2G
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.15 EUR
Mindestbestellmenge: 2500
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FQD12N20LTM-F085 fqd12n20l-d.pdf
FQD12N20LTM-F085
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.7A; Idm: 36A; 55W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.7A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Application: automotive industry
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DTA114EM3T5G dta114e-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 35...60
Mounting: SMD
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Quantity in set/package: 8000pcs.
Kind of transistor: BRT
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NSBA114EDP6T5G dta114ed-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 100mA; 269mW; SOT963; R1: 10kΩ
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 269mW
Case: SOT963
Current gain: 35...60
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Quantity in set/package: 8000pcs.
Base-emitter resistor: 10kΩ
Kind of transistor: BRT
Produkt ist nicht verfügbar
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NSVDTA114EET1G dta114e-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 300mW; SC75,SOT416
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC75; SOT416
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Current gain: 35...60
Application: automotive industry
Quantity in set/package: 3000pcs.
Produkt ist nicht verfügbar
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NSVDTA114EM3T5G dta114e-d.pdf
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Current gain: 35...60
Mounting: SMD
Base resistor: 10kΩ
Application: automotive industry
Base-emitter resistor: 10kΩ
Quantity in set/package: 8000pcs.
Kind of transistor: BRT
Kind of package: reel; tape
Produkt ist nicht verfügbar
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74ACT541SC 74act541-d.pdf FAIRS25848-1.pdf?t.download=true&u=5oefqw
74ACT541SC
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; SMD; SO20
Type of integrated circuit: digital
Number of channels: 8
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Kind of output: 3-state
Manufacturer series: ACT
Kind of integrated circuit: buffer; line driver; non-inverting
auf Bestellung 1539 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+2.03 EUR
57+1.27 EUR
103+0.7 EUR
109+0.66 EUR
1064+0.64 EUR
Mindestbestellmenge: 36
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FOD3120SV fod3120-d.pdf
Hersteller: ONSEMI
Category: Unclassified
Description: FOD3120SV
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.82 EUR
Mindestbestellmenge: 1000
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FOD3120TSV fod3120-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - Unclassified
Description: FOD3120TSV
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.83 EUR
Mindestbestellmenge: 1000
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FOD3184SDV fod3184-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - Unclassified
Description: FOD3184SDV
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+1.06 EUR
Mindestbestellmenge: 1000
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GRUBAS40-04LT1G
Hersteller: ONSEMI
Category: Unclassified
Description: GRUBAS40-04LT1G
auf Bestellung 51000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6000+0.032 EUR
Mindestbestellmenge: 6000
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FAN7688SJX fan7688-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SOP16; reel,tape
Type of integrated circuit: PMIC
Mounting: SMD
Case: SOP16
Kind of package: reel; tape
Produkt ist nicht verfügbar
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LMV324DTBR2G lmv321-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; TSSOP14; 2.7÷5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: quad
Case: TSSOP14
Slew rate: 1V/μs
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Input offset current: 1nA
Produkt ist nicht verfügbar
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LMV324DR2G lmv321-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; SO14; 2.7÷5VDC; reel,tape; IB: 1nA
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: quad
Case: SO14
Slew rate: 1V/μs
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input bias current: 1nA
Voltage supply range: 2.7...5V DC
Input offset current: 1nA
Produkt ist nicht verfügbar
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NCV33079DR2G mc33078-d.pdf
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 16MHz; SO14; ±5÷18VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 16MHz
Mounting: SMT
Case: SO14
Slew rate: 7V/μs
Operating temperature: -40...85°C
Input offset voltage: 3.5mV
Voltage supply range: ± 5...18V DC
Kind of package: reel; tape
Input bias current: 0.8µA
Input offset current: 175nA
Number of channels: quad
Produkt ist nicht verfügbar
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NCP340MUTBG ncp340-d.pdf
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 3A; Ch: 1; N-Channel; SMD; uDFN4
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: uDFN4
On-state resistance: 50mΩ
Kind of package: reel; tape
Supply voltage: 1.8...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Produkt ist nicht verfügbar
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J111-D26Z MMBFJ113-D.PDF
J111-D26Z
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 20mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 30Ω
Kind of package: tape
Produkt ist nicht verfügbar
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J111-D74Z MMBFJ113-D.PDF
J111-D74Z
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.625W; TO92; Igt: 50mA
Mounting: THT
Type of transistor: N-JFET
Case: TO92
Polarisation: unipolar
Gate-source voltage: -35V
Drain current: 20mA
Gate current: 50mA
Power dissipation: 0.625W
On-state resistance: 30Ω
Kind of package: Ammo Pack
Produkt ist nicht verfügbar
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H11G1M pVersion=0046&contRep=ZT&docId=E1C04D41A0D4AAF1A6F5005056AB5A8F&compId=H11G1.pdf?ci_sign=0c8401a19da9f7949bbb2844428e689ad0161ed1
H11G1M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
Case: DIP6
Turn-on time: 5µs
Collector-emitter voltage: 100V
CTR@If: 100%@10mA
Turn-off time: 0.1ms
Produkt ist nicht verfügbar
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H11G1M pVersion=0046&contRep=ZT&docId=E1C04D41A0D4AAF1A6F5005056AB5A8F&compId=H11G1.pdf?ci_sign=0c8401a19da9f7949bbb2844428e689ad0161ed1 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C020DA40C40D6&compId=H11G1M.pdf?ci_sign=1dfe61e44bd2a3298cba20b310fb5d6f1e5d3afe
H11G1M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; 4.17kV; CTR@If: 100%@10mA
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: DIP6
CTR@If: 100%@10mA
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
100+0.72 EUR
115+0.63 EUR
131+0.55 EUR
139+0.52 EUR
Mindestbestellmenge: 61
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H11G1SR2M pVersion=0046&contRep=ZT&docId=005056AB281E1EDE9A9C020DA40D80D6&compId=H11G1SR2M.pdf?ci_sign=5422feba83a7372f2023a6017d827788afb0c2f9
H11G1SR2M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 4.17kV; CTR@If: 100%@10mA
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Case: Gull wing 6
CTR@If: 100%@10mA
Produkt ist nicht verfügbar
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FCMT080N65S3 fcmt080n65s3-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; Idm: 95A; 260W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 38A
Pulsed drain current: 95A
Power dissipation: 260W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 71nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCMT180N65S3 fcmt180n65s3-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17A; Idm: 42.5A; 139W; PQFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 42.5A
Power dissipation: 139W
Case: PQFN4
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FCPF380N65FL1-F154 fcpf380n65fl1-f154-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.2A; Idm: 30.6A; 33W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.2A
Pulsed drain current: 30.6A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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74LCX125MTCX pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8D0F4C469E95EA&compId=74LCX125M.pdf?ci_sign=9bdf294189c519376e19ac6334c34946fe06ebdf
74LCX125MTCX
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA
Type of integrated circuit: digital
Mounting: SMD
Number of channels: 4
Case: TSSOP14
Operating temperature: -40...85°C
Kind of package: reel; tape
Supply voltage: 2...3.6V DC
Kind of output: 3-state
Kind of integrated circuit: buffer; non-inverting
Manufacturer series: LCX
Quiescent current: 10µA
auf Bestellung 1950 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
182+0.39 EUR
194+0.37 EUR
212+0.34 EUR
222+0.32 EUR
269+0.27 EUR
285+0.25 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
74LCX125MTC pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8D0F4C469E95EA&compId=74LCX125M.pdf?ci_sign=9bdf294189c519376e19ac6334c34946fe06ebdf
74LCX125MTC
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 4; SMD; TSSOP14; LCX; 10uA
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 4
Manufacturer series: LCX
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Supply voltage: 2...3.6V DC
Kind of output: 3-state
Quiescent current: 10µA
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
186+0.38 EUR
203+0.35 EUR
216+0.33 EUR
242+0.3 EUR
256+0.28 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
BC847BWT1G bc846awt1-d.pdf
BC847BWT1G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
auf Bestellung 2728 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
823+0.087 EUR
1191+0.06 EUR
1352+0.053 EUR
1786+0.04 EUR
2009+0.036 EUR
2552+0.028 EUR
2728+0.026 EUR
Mindestbestellmenge: 823
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MC74LVX125DR2G mc74lvx125-d.pdf
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 7500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.16 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
NSVBC847BLT3G bc846alt1-d.pdf
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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GRUBC857CLT1G
Hersteller: ONSEMI
Category: Unclassified
Description: GRUBC857CLT1G
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6000+0.022 EUR
Mindestbestellmenge: 6000
Im Einkaufswagen  Stück im Wert von  UAH
FDP025N06 fdp025n06-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 265A; Idm: 1060A; 395W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 265A
Pulsed drain current: 1060A
Power dissipation: 395W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: THT
Gate charge: 174nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTHL025N065SC1 nthl025n065sc1-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-3
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Produkt ist nicht verfügbar
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NTH4L025N065SC1 nth4l025n065sc1-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164nC
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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NVH4L025N065SC1 nvh4l025n065sc1-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 323A; 174W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 323A
Power dissipation: 174W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 164C
Kind of package: tube
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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NVMYS025N06CLTWG nvmys025n06cl-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 21A; Idm: 103A; 7.6W; LFPAK56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 21A
Pulsed drain current: 103A
Power dissipation: 7.6W
Case: LFPAK56
Gate-source voltage: ±20V
On-state resistance: 27.5mΩ
Mounting: SMD
Gate charge: 5.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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RFD16N05LSM9A pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DED89819534745&compId=RFD16N05LSM.pdf?ci_sign=32c18ccd0ce4e1c084e81432ae4b32379f5f3710
RFD16N05LSM9A
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 16A; 60W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 16A
Power dissipation: 60W
Case: DPAK
On-state resistance: 56mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2252 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
51+1.42 EUR
63+1.15 EUR
70+1.03 EUR
85+0.85 EUR
90+0.8 EUR
100+0.77 EUR
Mindestbestellmenge: 51
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RFD3055LESM9A pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DEE558ACB94745&compId=RFD3055LESM.pdf?ci_sign=129cc0944e6a4e688008b2cf6f899e1a94afbadf
RFD3055LESM9A
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 38W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Power dissipation: 38W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 0.107Ω
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 331 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
117+0.61 EUR
127+0.57 EUR
139+0.51 EUR
144+0.5 EUR
152+0.47 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
BZG03C150G pVersion=0046&contRep=ZT&docId=005056AB90B41EDBA4BD31B544BBE0C7&compId=bzg03c15.pdf?ci_sign=b404193c4524a81d71071edef655dbc39cbbf2ff
BZG03C150G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 150V; SMD; reel,tape; SMA; single diode; 1uA
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 150V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZG03C
Kind of package: reel; tape
auf Bestellung 5356 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
269+0.27 EUR
338+0.21 EUR
391+0.18 EUR
414+0.17 EUR
Mindestbestellmenge: 209
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BZG03C15G pVersion=0046&contRep=ZT&docId=005056AB90B41EDBA4BD31B544BBE0C7&compId=bzg03c15.pdf?ci_sign=b404193c4524a81d71071edef655dbc39cbbf2ff
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 15V; SMD; reel,tape; SMA; single diode; 1uA
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 15V
Mounting: SMD
Tolerance: ±5%
Case: SMA
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZG03C
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NVBLS4D0N15MC nvbls4d0n15mc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 187A; Idm: 900A; 158W
Type of transistor: N-MOSFET
Kind of channel: enhancement
Case: H-PSOF8L
Kind of package: reel; tape
Mounting: SMD
Gate charge: 90.4nC
On-state resistance: 4.4mΩ
Power dissipation: 158W
Gate-source voltage: ±20V
Drain-source voltage: 150V
Drain current: 187A
Pulsed drain current: 900A
Polarisation: unipolar
Produkt ist nicht verfügbar
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LM211DR2G lm211-d.pdf
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; Cmp: 1; 5÷30V; SMT; SO8; reel,tape; Iio: 1.7nA
Type of integrated circuit: comparator
Operating voltage: 5...30V
Mounting: SMT
Case: SO8
Operating temperature: -25...85°C
Input offset voltage: 3mV
Input bias current: 45nA
Kind of package: reel; tape
Input offset current: 1.7nA
Number of comparators: 1
Produkt ist nicht verfügbar
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MC78M15BDTRKG mc78m00-d.pdf
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 0.5A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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NSR0320MW2T1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE5869A03A18B478469&compId=NSR0320MW2T1G.PDF?ci_sign=8142c45eea7cca95166e1e98a1b3041f167eab0d
NSR0320MW2T1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 23V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 23V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
auf Bestellung 16669 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
455+0.16 EUR
743+0.096 EUR
905+0.079 EUR
1534+0.047 EUR
1624+0.044 EUR
6000+0.042 EUR
Mindestbestellmenge: 313
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NSR0320MW2T3G nsr0320mw2t1-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 23V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 23V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 5A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MC33039DR2G mc33039-d.pdf
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; brushless motor controller; SO8; 5.5÷9VDC
Mounting: SMD
Operating voltage: 5.5...9V DC
Operating temperature: -40...85°C
Kind of integrated circuit: brushless motor controller
Kind of package: reel; tape
Case: SO8
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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SZBZX84C12LT3G bzx84c2v4lt1-d.pdf
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener
Type of diode: Zener
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.025 EUR
Mindestbestellmenge: 10000
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MARSZBZX84C12LT1G
Hersteller: ONSEMI
Category: Unclassified
Description: MARSZBZX84C12LT1G
auf Bestellung 21000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6000+0.021 EUR
Mindestbestellmenge: 6000
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RSL10-SENSE-DB-GEVK RSL10_Sensor_Dev_Kit.pdf
Hersteller: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation
Type of development kit: evaluation
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Programmers and development kits features: Bluetooth board
Produkt ist nicht verfügbar
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RSL10-SENSE-GEVK RSL10_Sensor_Dev_Kit.pdf
Hersteller: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation
Type of development kit: evaluation
Components: BHI150; BHI160; BME680; INMP522; N24RF64; NOA1305; RSL10
Programmers and development kits features: Bluetooth board
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
H11AV1AM pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F4E6DB140C7&compId=H11AV1AM.pdf?ci_sign=5e699d109124f9bd1a092a03486bc4a351a41601
H11AV1AM
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Turn-off time: 15µs
Case: DIP6
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 100-300%@10mA
Type of optocoupler: optocoupler
Insulation voltage: 4.17kV
Mounting: THT
Kind of output: transistor
Turn-on time: 15µs
auf Bestellung 1667 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
153+0.47 EUR
170+0.42 EUR
187+0.38 EUR
Mindestbestellmenge: 109
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H11AV1M pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F4E6DB140C7&compId=H11AV1AM.pdf?ci_sign=5e699d109124f9bd1a092a03486bc4a351a41601
H11AV1M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Turn-off time: 15µs
Case: DIP6
Number of channels: 1
Max. off-state voltage: 6V
CTR@If: 100-300%@10mA
Type of optocoupler: optocoupler
Insulation voltage: 4.17kV
Mounting: THT
Kind of output: transistor
Turn-on time: 15µs
auf Bestellung 694 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
73+0.99 EUR
112+0.64 EUR
129+0.56 EUR
137+0.52 EUR
Mindestbestellmenge: 73
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MC74VHC4051DR2G mc74vhc4051-d.pdf
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital
Type of integrated circuit: digital
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
2500+0.25 EUR
Mindestbestellmenge: 2500
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KSP10TA ksp10-d.pdf
KSP10TA
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; RF; 25V; 0.35W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 25V
Power dissipation: 0.35W
Case: TO92
Current gain: 60
Mounting: THT
Kind of package: Ammo Pack
Frequency: 650MHz
Produkt ist nicht verfügbar
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1N4936G pVersion=0046&contRep=ZT&docId=005056AB281E1EDF8FB87CB914A100D6&compId=1N4933_7.PDF?ci_sign=3be4f95dd660378c4c9ca5195cf5fa6d26cfbd92
1N4936G
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; bulk; Ifsm: 30A; CASE59-10,DO41
Kind of package: bulk
Case: CASE59-10; DO41
Features of semiconductor devices: fast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: THT
Reverse recovery time: 200ns
Load current: 1A
Max. forward voltage: 1.2V
Max. off-state voltage: 0.4kV
Max. forward impulse current: 30A
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
290+0.24 EUR
Mindestbestellmenge: 290
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