| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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TIP50G | ONSEMI |
 Category: NPN THT transistorsDescription: Transistor: NPN; bipolar; 400V; 1A; 40W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 400V Collector current: 1A Power dissipation: 40W Case: TO220AB Current gain: 30...150 Mounting: THT Kind of package: tube Frequency: 10MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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US1GFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.3V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NRVUS1GFA | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SOD123F; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 50ns Semiconductor structure: single diode Case: SOD123F Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 1N5363BRLG | ONSEMI |
 Category: THT Zener diodesDescription: Diode: Zener; 5W; 30V; CASE017AA; single diode; reel,tape; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 30V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N53xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NTMFS4C10NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 340A; 23.6W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 46A Pulsed drain current: 340A Power dissipation: 23.6W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 6.95mΩ Mounting: SMD Gate charge: 9.7nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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SBRS81100NT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape Mounting: SMD Application: automotive industry Max. off-state voltage: 0.1kV Load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Type of diode: Schottky rectifying Max. forward impulse current: 50A Max. forward voltage: 0.75V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SBRS8340T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 40V; 4A; reel,tape Max. forward voltage: 0.5V Application: automotive industry Max. off-state voltage: 40V Load current: 4A Kind of package: reel; tape Semiconductor structure: single diode Case: SMC Type of diode: Schottky rectifying Mounting: SMD Max. forward impulse current: 80A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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SBRS8120NT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 20V; 1A; reel,tape Max. forward voltage: 0.6V Application: automotive industry Max. off-state voltage: 20V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Type of diode: Schottky rectifying Mounting: SMD Max. forward impulse current: 40A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SBRS8130LNT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape Max. forward voltage: 0.45V Application: automotive industry Max. off-state voltage: 30V Load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Type of diode: Schottky rectifying Mounting: SMD Max. forward impulse current: 40A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SBRS8140NT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape Max. forward voltage: 0.6V Application: automotive industry Max. off-state voltage: 40V Load current: 1A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Type of diode: Schottky rectifying Mounting: SMD Max. forward impulse current: 40A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BZX85C12 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1W; 12V; DO41; single diode; bulk; BZX85C Type of diode: Zener Power dissipation: 1W Zener voltage: 12V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: bulk Manufacturer series: BZX85C |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MMSZ5242ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 12V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SZMMSZ5242ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 12V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxE Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| US-SIGFOX-GEVB | ONSEMI |
Category: Development kits - others Description: Expansion board; prototype board Type of accessories for development kits: expansion board Kit contents: prototype board Connection: pin header; pin strips; SMA development kits accessories features: Arduino Shield compatible; SIGFOX module Interface: GPIO; I2C; UART |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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MC74VHC02DTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: NOR Number of inputs: 2 Mounting: SMD Kind of package: reel; tape Case: TSSOP14 Family: VHC Number of channels: quad; 4 Supply voltage: 2...5.5V DC Operating temperature: -40...85°C Technology: CMOS Quiescent current: 20µA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MC33166TG | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uin: 7.5÷40VDC; 3A; TO220-5; THT; 72kHz; Ch: 1 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Input voltage: 7.5...40V DC Frequency: 72kHz Mounting: THT Case: TO220-5 Topology: boost; buck; buck-boost Number of channels: 1 Operating temperature: -40...85°C Application: SMPS Kind of package: tube Output current: 3A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FSL336LRLX | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 1.8A; 650V; 50kHz; Ch: 1 Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Input voltage: 85...265V Frequency: 50kHz Mounting: SMD Case: LSOP7 Topology: buck; buck-boost; flyback Number of channels: 1 Operating temperature: -40...125°C Application: SMPS Power: 9/20W Output voltage: 650V Kind of package: reel; tape On-state resistance: 4Ω Output current: 1.8A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| FSL336LRN | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; AC/DC switcher,PWM controller; 1.8A; 650V; 50kHz; Ch: 1 Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Input voltage: 85...265V Frequency: 50kHz Mounting: THT Case: DIP7 Topology: buck; buck-boost; flyback Number of channels: 1 Operating temperature: -40...125°C Application: SMPS Power: 9/20W Output voltage: 650V Kind of package: tube On-state resistance: 4Ω Output current: 1.8A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| CAT25128XI-T2 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 128kb EEPROM Interface: SPI Memory organisation: 16kx8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Access time: 140ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CAT25128VI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 128kb EEPROM Interface: SPI Memory organisation: 16kx8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...85°C Access time: 140ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CAT25128YI-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 128kb EEPROM Interface: SPI Memory organisation: 16kx8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...85°C Access time: 140ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CAT25128VP2I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 128kb EEPROM Interface: SPI Memory organisation: 16kx8bit Operating voltage: 1.8...5.5V Clock frequency: 20MHz Mounting: SMD Case: TDFN8 Kind of interface: serial Operating temperature: -40...85°C Access time: 140ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CAV25128VE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 128kb EEPROM Interface: SPI Memory organisation: 16kx8bit Operating voltage: 2.5...5.5V Clock frequency: 10MHz Mounting: SMD Case: SOIC8 Kind of interface: serial Operating temperature: -40...125°C Access time: 40ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CAV25128YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 128kb EEPROM Interface: SPI Memory organisation: 16kx8bit Operating voltage: 2.5...5.5V Clock frequency: 10MHz Mounting: SMD Case: TSSOP8 Kind of interface: serial Operating temperature: -40...125°C Access time: 40ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| FDMC7660S | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 200A; 41W; Power33 Mounting: SMD Case: Power33 Technology: PowerTrench® Drain current: 40A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 3.1mΩ Pulsed drain current: 200A Power dissipation: 41W Gate charge: 66nC Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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MBRA2H100T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 0.1kV Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.65V Max. forward impulse current: 130A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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1SMB5943BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 56V; SMD; SMB; single diode; reel,tape; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 56V Mounting: SMD Tolerance: ±5% Case: SMB Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMB59xxB |
auf Bestellung 1032 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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SZ1SMB5943BT3G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 3W; 56V; SMD; SMB; single diode; reel,tape; 1SMB59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 56V Mounting: SMD Tolerance: ±5% Case: SMB Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1SMB59xxB Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NLV74HC589ADTR2G | ONSEMI |
Category: Shift registers Description: IC: digital; Ch: 1; CMOS; SMD; TSSOP16; HC; HC; -55÷125°C; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: 3-state; 8bit; parallel in; serial input; serial output; shift register Number of channels: 1 Technology: CMOS Mounting: SMD Case: TSSOP16 Manufacturer series: HC Family: HC Operating temperature: -55...125°C Supply voltage: 2...6V DC Kind of package: reel; tape Kind of output: 3-state Number of inputs: 13 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NCV4254CPDAJR2G | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; SO8; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Case: SO8 Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| LM2902EDR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; SO14 Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: SO14 Operating temperature: -40...105°C Kind of package: reel; tape Input offset voltage: 10mV Input offset current: 200nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| LM2902VDR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; SO14 Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: SO14 Operating temperature: -40...125°C Kind of package: reel; tape Input offset voltage: 13mV Input offset current: 200nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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LM2902VDTBR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; 13mV Type of integrated circuit: operational amplifier Bandwidth: 1MHz Number of channels: quad; 4 Mounting: SMT Voltage supply range: ± 1.5...16V DC; 3...32V DC Case: TSSOP14 Operating temperature: -40...125°C Kind of package: reel; tape Input offset voltage: 13mV Input offset current: 200nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NSS60200LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 2A; 0.54W; SOT23,TO236AB Mounting: SMD Collector-emitter voltage: 60V Power dissipation: 0.54W Polarisation: bipolar Type of transistor: PNP Current gain: 150 Kind of package: reel; tape Case: SOT23; TO236AB Frequency: 100MHz Collector current: 2A |
Produkt ist nicht verfügbar |
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NSS60201LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 2A; 0.54W; SOT23,TO236AB Mounting: SMD Collector-emitter voltage: 60V Power dissipation: 0.54W Polarisation: bipolar Application: automotive industry Type of transistor: NPN Current gain: 150...350 Kind of package: reel; tape Case: SOT23; TO236AB Frequency: 100MHz Collector current: 2A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NSS60101DMTTBG | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 60V; 1A; 2.27W; WDFN6 Mounting: SMD Collector-emitter voltage: 60V Power dissipation: 2.27W Polarisation: bipolar Application: automotive industry Type of transistor: NPN x2 Current gain: 90 Kind of package: reel; tape Case: WDFN6 Frequency: 180MHz Collector current: 1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NSS60100DMTTBG | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 60V; 1A; 2.27W; WDFN6 Mounting: SMD Collector-emitter voltage: 60V Power dissipation: 2.27W Polarisation: bipolar Application: automotive industry Type of transistor: PNP x2 Kind of package: reel; tape Case: WDFN6 Collector current: 1A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NSS60201SMTTBG | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 2A; 1.8W; WDFN6; automotive industry Mounting: SMD Collector-emitter voltage: 60V Power dissipation: 1.8W Polarisation: bipolar Application: automotive industry Type of transistor: NPN Current gain: 35 Kind of package: reel; tape Case: WDFN6 Frequency: 180MHz Collector current: 2A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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NSS60600MZ4T3G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4 Mounting: SMD Collector-emitter voltage: 60V Power dissipation: 2W Polarisation: bipolar Type of transistor: PNP Current gain: 120...360 Kind of package: reel; tape Case: SOT223-4; TO261-4 Frequency: 100MHz Collector current: 6A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NSS60601MZ4T3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4 Mounting: SMD Collector-emitter voltage: 60V Power dissipation: 2W Polarisation: bipolar Type of transistor: NPN Current gain: 120...360 Kind of package: reel; tape Case: SOT223-4; TO261-4 Frequency: 100MHz Collector current: 6A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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RB751S40T5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Max. forward impulse current: 0.5A Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NSVRB751S40T5G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Max. forward impulse current: 0.5A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NSVRB751S40T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Max. forward impulse current: 0.5A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NCV887103D1R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; SO8; SMD; 340kHz; Ch: 1; reel,tape; 3.2÷40V Mounting: SMD Supply voltage: 3.2...40V Type of integrated circuit: PMIC Efficiency: 93% Application: automotive industry Kind of package: reel; tape Case: SO8 Kind of integrated circuit: DC/DC converter Number of channels: 1 Frequency: 0.34MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NTB110N65S3HF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 62nC Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 69A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
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NTP110N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 62nC Kind of channel: enhancement Kind of package: tube Pulsed drain current: 69A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NVB110N65S3F | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 58nC Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 69A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NTHL110N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19.5A; Idm: 69A; 240W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19.5A Power dissipation: 240W Case: TO247 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 58nC Kind of channel: enhancement Kind of package: tube Pulsed drain current: 69A Technology: SuperFET® |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NTMT110N65S3HF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TDFN4 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: TDFN4 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 62nC Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 69A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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NTPF110N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 62nC Kind of channel: enhancement Kind of package: tube Pulsed drain current: 69A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NVHL110N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 58nC Kind of channel: enhancement Kind of package: tube Pulsed drain current: 69A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NVHL110N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Power dissipation: 240W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.11Ω Mounting: THT Gate charge: 58nC Kind of channel: enhancement Kind of package: tube Pulsed drain current: 69A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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FDN306P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -2.6A Power dissipation: 0.5W Case: SuperSOT-3 On-state resistance: 80mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Technology: PowerTrench® Gate-source voltage: ±8V |
auf Bestellung 124 Stücke: Lieferzeit 14-21 Tag (e) |
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FDN358P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; SuperSOT-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -1.5A Power dissipation: 0.5W Case: SuperSOT-3 On-state resistance: 0.2Ω Mounting: SMD Gate charge: 5.6nC Kind of package: reel; tape Kind of channel: enhancement Features of semiconductor devices: logic level Technology: PowerTrench® Gate-source voltage: ±20V |
auf Bestellung 2490 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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FCH029N65S3-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 50.8A; Idm: 200A; 463W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 50.8A Power dissipation: 463W Case: TO247 Gate-source voltage: ±30V On-state resistance: 23.7mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 200A Gate charge: 201nC |
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NTHL019N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 73A; Idm: 328A; 625W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 73A Power dissipation: 625W Case: TO247 Gate-source voltage: ±30V On-state resistance: 15mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 328A Gate charge: 282nC |
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MMBD914 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT23 Max. forward impulse current: 2A Kind of package: reel; tape Power dissipation: 0.35W Capacitance: 4pF |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH |
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FDD770N15A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 18A Power dissipation: 56.8W Case: DPAK Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2417 Stücke: Lieferzeit 14-21 Tag (e) |
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BZX85C5V6 | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 1W; 5.6V; DO41; single diode; bulk; BZX85C Type of diode: Zener Power dissipation: 1W Zener voltage: 5.6V Case: DO41 Mounting: THT Tolerance: ±5% Manufacturer series: BZX85C Kind of package: bulk Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MC7815BDTRKG | ONSEMI |
Category: Fixed voltage regulators Description: IC: voltage regulator; linear,fixed; 15V; 1A; DPAK; SMD; reel,tape Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Output voltage: 15V Output current: 1A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 |
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Im Einkaufswagen Stück im Wert von UAH |
| TIP50G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 40W
Case: TO220AB
Current gain: 30...150
Mounting: THT
Kind of package: tube
Frequency: 10MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 400V; 1A; 40W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 1A
Power dissipation: 40W
Case: TO220AB
Current gain: 30...150
Mounting: THT
Kind of package: tube
Frequency: 10MHz
Produkt ist nicht verfügbar
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| US1GFA |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| NRVUS1GFA |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 50ns; SOD123F; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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| 1N5363BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 30V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 30V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 30V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 30V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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| NTMFS4C10NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 340A; 23.6W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Pulsed drain current: 340A
Power dissipation: 23.6W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 6.95mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 340A; 23.6W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Pulsed drain current: 340A
Power dissipation: 23.6W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 6.95mΩ
Mounting: SMD
Gate charge: 9.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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| SBRS81100NT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Max. forward voltage: 0.75V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 100V; 2A; reel,tape
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 0.1kV
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
Max. forward impulse current: 50A
Max. forward voltage: 0.75V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBRS8340T3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 4A; reel,tape
Max. forward voltage: 0.5V
Application: automotive industry
Max. off-state voltage: 40V
Load current: 4A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 80A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 4A; reel,tape
Max. forward voltage: 0.5V
Application: automotive industry
Max. off-state voltage: 40V
Load current: 4A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 80A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SBRS8120NT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 20V; 1A; reel,tape
Max. forward voltage: 0.6V
Application: automotive industry
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 40A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 20V; 1A; reel,tape
Max. forward voltage: 0.6V
Application: automotive industry
Max. off-state voltage: 20V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 40A
Produkt ist nicht verfügbar
Im Einkaufswagen
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| SBRS8130LNT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape
Max. forward voltage: 0.45V
Application: automotive industry
Max. off-state voltage: 30V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 40A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 30V; 2A; reel,tape
Max. forward voltage: 0.45V
Application: automotive industry
Max. off-state voltage: 30V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 40A
Produkt ist nicht verfügbar
Im Einkaufswagen
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| SBRS8140NT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Max. forward voltage: 0.6V
Application: automotive industry
Max. off-state voltage: 40V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 40A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 40V; 1A; reel,tape
Max. forward voltage: 0.6V
Application: automotive industry
Max. off-state voltage: 40V
Load current: 1A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 40A
Produkt ist nicht verfügbar
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| BZX85C12 |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 12V; DO41; single diode; bulk; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: BZX85C
Category: THT Zener diodes
Description: Diode: Zener; 1W; 12V; DO41; single diode; bulk; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 12V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: BZX85C
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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| MMSZ5242ET1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxE
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxE
Produkt ist nicht verfügbar
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| SZMMSZ5242ET1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxE
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxE
Application: automotive industry
Produkt ist nicht verfügbar
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| US-SIGFOX-GEVB |
|
Hersteller: ONSEMI
Category: Development kits - others
Description: Expansion board; prototype board
Type of accessories for development kits: expansion board
Kit contents: prototype board
Connection: pin header; pin strips; SMA
development kits accessories features: Arduino Shield compatible; SIGFOX module
Interface: GPIO; I2C; UART
Category: Development kits - others
Description: Expansion board; prototype board
Type of accessories for development kits: expansion board
Kit contents: prototype board
Connection: pin header; pin strips; SMA
development kits accessories features: Arduino Shield compatible; SIGFOX module
Interface: GPIO; I2C; UART
Produkt ist nicht verfügbar
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| MC74VHC02DTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of inputs: 2
Mounting: SMD
Kind of package: reel; tape
Case: TSSOP14
Family: VHC
Number of channels: quad; 4
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Technology: CMOS
Quiescent current: 20µA
Category: Gates, inverters
Description: IC: digital; NOR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: NOR
Number of inputs: 2
Mounting: SMD
Kind of package: reel; tape
Case: TSSOP14
Family: VHC
Number of channels: quad; 4
Supply voltage: 2...5.5V DC
Operating temperature: -40...85°C
Technology: CMOS
Quiescent current: 20µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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| MC33166TG |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 7.5÷40VDC; 3A; TO220-5; THT; 72kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 7.5...40V DC
Frequency: 72kHz
Mounting: THT
Case: TO220-5
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...85°C
Application: SMPS
Kind of package: tube
Output current: 3A
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 7.5÷40VDC; 3A; TO220-5; THT; 72kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 7.5...40V DC
Frequency: 72kHz
Mounting: THT
Case: TO220-5
Topology: boost; buck; buck-boost
Number of channels: 1
Operating temperature: -40...85°C
Application: SMPS
Kind of package: tube
Output current: 3A
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FSL336LRLX |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1.8A; 650V; 50kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Input voltage: 85...265V
Frequency: 50kHz
Mounting: SMD
Case: LSOP7
Topology: buck; buck-boost; flyback
Number of channels: 1
Operating temperature: -40...125°C
Application: SMPS
Power: 9/20W
Output voltage: 650V
Kind of package: reel; tape
On-state resistance: 4Ω
Output current: 1.8A
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1.8A; 650V; 50kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Input voltage: 85...265V
Frequency: 50kHz
Mounting: SMD
Case: LSOP7
Topology: buck; buck-boost; flyback
Number of channels: 1
Operating temperature: -40...125°C
Application: SMPS
Power: 9/20W
Output voltage: 650V
Kind of package: reel; tape
On-state resistance: 4Ω
Output current: 1.8A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSL336LRN |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1.8A; 650V; 50kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Input voltage: 85...265V
Frequency: 50kHz
Mounting: THT
Case: DIP7
Topology: buck; buck-boost; flyback
Number of channels: 1
Operating temperature: -40...125°C
Application: SMPS
Power: 9/20W
Output voltage: 650V
Kind of package: tube
On-state resistance: 4Ω
Output current: 1.8A
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1.8A; 650V; 50kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Input voltage: 85...265V
Frequency: 50kHz
Mounting: THT
Case: DIP7
Topology: buck; buck-boost; flyback
Number of channels: 1
Operating temperature: -40...125°C
Application: SMPS
Power: 9/20W
Output voltage: 650V
Kind of package: tube
On-state resistance: 4Ω
Output current: 1.8A
Produkt ist nicht verfügbar
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| CAT25128XI-T2 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128kb EEPROM
Interface: SPI
Memory organisation: 16kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 140ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128kb EEPROM
Interface: SPI
Memory organisation: 16kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 140ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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Stück im Wert von UAH
| CAT25128VI-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128kb EEPROM
Interface: SPI
Memory organisation: 16kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 140ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128kb EEPROM
Interface: SPI
Memory organisation: 16kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 140ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
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| CAT25128YI-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128kb EEPROM
Interface: SPI
Memory organisation: 16kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 140ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128kb EEPROM
Interface: SPI
Memory organisation: 16kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 140ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| CAT25128VP2I-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128kb EEPROM
Interface: SPI
Memory organisation: 16kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 140ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 1.8÷5.5V; 20MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128kb EEPROM
Interface: SPI
Memory organisation: 16kx8bit
Operating voltage: 1.8...5.5V
Clock frequency: 20MHz
Mounting: SMD
Case: TDFN8
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 140ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| CAV25128VE-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128kb EEPROM
Interface: SPI
Memory organisation: 16kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128kb EEPROM
Interface: SPI
Memory organisation: 16kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| CAV25128YE-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128kb EEPROM
Interface: SPI
Memory organisation: 16kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 128kbEEPROM; SPI; 16kx8bit; 2.5÷5.5V; 10MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 128kb EEPROM
Interface: SPI
Memory organisation: 16kx8bit
Operating voltage: 2.5...5.5V
Clock frequency: 10MHz
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Operating temperature: -40...125°C
Access time: 40ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| FDMC7660S |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 200A; 41W; Power33
Mounting: SMD
Case: Power33
Technology: PowerTrench®
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 3.1mΩ
Pulsed drain current: 200A
Power dissipation: 41W
Gate charge: 66nC
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 200A; 41W; Power33
Mounting: SMD
Case: Power33
Technology: PowerTrench®
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 3.1mΩ
Pulsed drain current: 200A
Power dissipation: 41W
Gate charge: 66nC
Polarisation: unipolar
Produkt ist nicht verfügbar
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| MBRA2H100T3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Max. forward impulse current: 130A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 100V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.65V
Max. forward impulse current: 130A
Kind of package: reel; tape
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| 1SMB5943BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 56V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 56V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
auf Bestellung 1032 Stücke:
Lieferzeit 14-21 Tag (e)
| SZ1SMB5943BT3G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 56V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 56V; SMD; SMB; single diode; reel,tape; 1SMB59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±5%
Case: SMB
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1SMB59xxB
Application: automotive industry
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| NLV74HC589ADTR2G |
|
Hersteller: ONSEMI
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; TSSOP16; HC; HC; -55÷125°C; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; parallel in; serial input; serial output; shift register
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Kind of output: 3-state
Number of inputs: 13
Category: Shift registers
Description: IC: digital; Ch: 1; CMOS; SMD; TSSOP16; HC; HC; -55÷125°C; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; parallel in; serial input; serial output; shift register
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: HC
Family: HC
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Kind of output: 3-state
Number of inputs: 13
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| NCV4254CPDAJR2G |
|
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; SO8; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; SO8; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Case: SO8
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Produkt ist nicht verfügbar
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| LM2902EDR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO14
Operating temperature: -40...105°C
Kind of package: reel; tape
Input offset voltage: 10mV
Input offset current: 200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO14
Operating temperature: -40...105°C
Kind of package: reel; tape
Input offset voltage: 10mV
Input offset current: 200nA
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| LM2902VDR2G |
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO14
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset voltage: 13mV
Input offset current: 200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; SO14
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: SO14
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset voltage: 13mV
Input offset current: 200nA
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| LM2902VDTBR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; 13mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: TSSOP14
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset voltage: 13mV
Input offset current: 200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 4; ±1.5÷16VDC,3÷32VDC; 13mV
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Number of channels: quad; 4
Mounting: SMT
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Case: TSSOP14
Operating temperature: -40...125°C
Kind of package: reel; tape
Input offset voltage: 13mV
Input offset current: 200nA
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| NSS60200LT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 2A; 0.54W; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 0.54W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 150
Kind of package: reel; tape
Case: SOT23; TO236AB
Frequency: 100MHz
Collector current: 2A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 2A; 0.54W; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 0.54W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 150
Kind of package: reel; tape
Case: SOT23; TO236AB
Frequency: 100MHz
Collector current: 2A
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| NSS60201LT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 0.54W; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 0.54W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Current gain: 150...350
Kind of package: reel; tape
Case: SOT23; TO236AB
Frequency: 100MHz
Collector current: 2A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 0.54W; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 0.54W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Current gain: 150...350
Kind of package: reel; tape
Case: SOT23; TO236AB
Frequency: 100MHz
Collector current: 2A
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| NSS60101DMTTBG |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 60V; 1A; 2.27W; WDFN6
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 2.27W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN x2
Current gain: 90
Kind of package: reel; tape
Case: WDFN6
Frequency: 180MHz
Collector current: 1A
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 60V; 1A; 2.27W; WDFN6
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 2.27W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN x2
Current gain: 90
Kind of package: reel; tape
Case: WDFN6
Frequency: 180MHz
Collector current: 1A
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| NSS60100DMTTBG |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 1A; 2.27W; WDFN6
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 2.27W
Polarisation: bipolar
Application: automotive industry
Type of transistor: PNP x2
Kind of package: reel; tape
Case: WDFN6
Collector current: 1A
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 60V; 1A; 2.27W; WDFN6
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 2.27W
Polarisation: bipolar
Application: automotive industry
Type of transistor: PNP x2
Kind of package: reel; tape
Case: WDFN6
Collector current: 1A
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| NSS60201SMTTBG |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 1.8W; WDFN6; automotive industry
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 1.8W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Current gain: 35
Kind of package: reel; tape
Case: WDFN6
Frequency: 180MHz
Collector current: 2A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 2A; 1.8W; WDFN6; automotive industry
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 1.8W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Current gain: 35
Kind of package: reel; tape
Case: WDFN6
Frequency: 180MHz
Collector current: 2A
Produkt ist nicht verfügbar
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| NSS60600MZ4T3G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 2W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 120...360
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Frequency: 100MHz
Collector current: 6A
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 2W
Polarisation: bipolar
Type of transistor: PNP
Current gain: 120...360
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Frequency: 100MHz
Collector current: 6A
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| NSS60601MZ4T3G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 120...360
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Frequency: 100MHz
Collector current: 6A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 6A; 2W; SOT223-4,TO261-4
Mounting: SMD
Collector-emitter voltage: 60V
Power dissipation: 2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 120...360
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Frequency: 100MHz
Collector current: 6A
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| RB751S40T5G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
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| NSVRB751S40T5G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
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| NSVRB751S40T1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
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| NCV887103D1R2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; 340kHz; Ch: 1; reel,tape; 3.2÷40V
Mounting: SMD
Supply voltage: 3.2...40V
Type of integrated circuit: PMIC
Efficiency: 93%
Application: automotive industry
Kind of package: reel; tape
Case: SO8
Kind of integrated circuit: DC/DC converter
Number of channels: 1
Frequency: 0.34MHz
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; SO8; SMD; 340kHz; Ch: 1; reel,tape; 3.2÷40V
Mounting: SMD
Supply voltage: 3.2...40V
Type of integrated circuit: PMIC
Efficiency: 93%
Application: automotive industry
Kind of package: reel; tape
Case: SO8
Kind of integrated circuit: DC/DC converter
Number of channels: 1
Frequency: 0.34MHz
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| NTB110N65S3HF |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 62nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 69A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 62nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 69A
Produkt ist nicht verfügbar
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| NTP110N65S3HF |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 62nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 69A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 62nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 69A
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NVB110N65S3F |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 69A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 58nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 69A
Produkt ist nicht verfügbar
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| NTHL110N65S3F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.5A; Idm: 69A; 240W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.5A
Power dissipation: 240W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 69A
Technology: SuperFET®
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.5A; Idm: 69A; 240W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.5A
Power dissipation: 240W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 69A
Technology: SuperFET®
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
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| NTMT110N65S3HF |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 62nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 69A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TDFN4
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TDFN4
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 62nC
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 69A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| NTPF110N65S3HF |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 62nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 69A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 62nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 69A
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| NVHL110N65S3F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 69A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 69A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVHL110N65S3HF |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 69A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 58nC
Kind of channel: enhancement
Kind of package: tube
Pulsed drain current: 69A
Produkt ist nicht verfügbar
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| FDN306P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.6A
Power dissipation: 0.5W
Case: SuperSOT-3
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: PowerTrench®
Gate-source voltage: ±8V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -2.6A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.6A
Power dissipation: 0.5W
Case: SuperSOT-3
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: PowerTrench®
Gate-source voltage: ±8V
auf Bestellung 124 Stücke:
Lieferzeit 14-21 Tag (e)
| FDN358P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 0.5W
Case: SuperSOT-3
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: PowerTrench®
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; 0.5W; SuperSOT-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Power dissipation: 0.5W
Case: SuperSOT-3
On-state resistance: 0.2Ω
Mounting: SMD
Gate charge: 5.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: PowerTrench®
Gate-source voltage: ±20V
auf Bestellung 2490 Stücke:
Lieferzeit 14-21 Tag (e)
| FCH029N65S3-F155 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 50.8A; Idm: 200A; 463W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 50.8A
Power dissipation: 463W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
Gate charge: 201nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 50.8A; Idm: 200A; 463W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 50.8A
Power dissipation: 463W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 23.7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 200A
Gate charge: 201nC
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Stück im Wert von UAH
| NTHL019N65S3H |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 73A; Idm: 328A; 625W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 73A
Power dissipation: 625W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 15mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 328A
Gate charge: 282nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 73A; Idm: 328A; 625W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 73A
Power dissipation: 625W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 15mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 328A
Gate charge: 282nC
Produkt ist nicht verfügbar
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| MMBD914 |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.35W
Capacitance: 4pF
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ifsm: 2A; 350mW
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward impulse current: 2A
Kind of package: reel; tape
Power dissipation: 0.35W
Capacitance: 4pF
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
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| FDD770N15A |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 56.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 18A; 56.8W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 18A
Power dissipation: 56.8W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2417 Stücke:
Lieferzeit 14-21 Tag (e)
| BZX85C5V6 |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.6V; DO41; single diode; bulk; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.6V
Case: DO41
Mounting: THT
Tolerance: ±5%
Manufacturer series: BZX85C
Kind of package: bulk
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1W; 5.6V; DO41; single diode; bulk; BZX85C
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 5.6V
Case: DO41
Mounting: THT
Tolerance: ±5%
Manufacturer series: BZX85C
Kind of package: bulk
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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| MC7815BDTRKG |
|
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; 15V; 1A; DPAK; SMD; reel,tape
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Output voltage: 15V
Output current: 1A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
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