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FQP34N20 FQP34N20 ONSEMI ONSM-S-A0003585150-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; 180W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 180W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
9+7.95 EUR
Mindestbestellmenge: 9
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RFD12N06RLESM9A RFD12N06RLESM9A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DEBCBDF03DC745&compId=RFD12N06RLESM.pdf?ci_sign=b329f5809fdc790d1cc6e79cb1df143b63b41d5d Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: UltraFET®
auf Bestellung 1440 Stücke:
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54+1.33 EUR
69+1.05 EUR
92+0.78 EUR
98+0.74 EUR
250+0.71 EUR
Mindestbestellmenge: 54
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NCP51145PDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3CEE6C66BE280C7&compId=NCP51145.pdf?ci_sign=2bf54601ef8295f1ee1cb715c15bd9b934fbec7a Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷2.5VDC
Type of integrated circuit: PMIC
Case: SO8-EP
Mounting: SMD
Operating temperature: max. 150°C
Output current: 1.8A
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Operating voltage: 1...5.5/4.75...5.5V DC
Output voltage: 0.6...2.5V DC
Produkt ist nicht verfügbar
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NCP51198PDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3CF16F181FFA0C7&compId=NCP51198.pdf?ci_sign=e8ff3cd234cb04daeb752b60a69eb5bc1f0d6ed2 Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.675÷1.35V
Type of integrated circuit: PMIC
Case: SO8-EP
Mounting: SMD
Operating temperature: -40...125°C
Output current: 1.5A
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Operating voltage: 1.35...2.5/2.2...5.5V DC
Output voltage: 0.675...1.35V
Produkt ist nicht verfügbar
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NCP51400MNTXG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3CFEC53E83360C7&compId=NCP51400.pdf?ci_sign=8d88f15eab3db0469f823b03a6cee9429eba9dcc Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: -40...125°C
Application: for DDR memories
Operating voltage: 0.5...1.8/2.375...5.5V DC
Output voltage: -0.1...3.5V
Produkt ist nicht verfügbar
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NCP51401MNTXG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3D0631DE58240C7&compId=NCP51401.pdf?ci_sign=7103ea287392303e8870a51844711cd98e570658 Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: -40...125°C
Application: for DDR memories
Operating voltage: 0.5...1.8/2.375...5.5V DC
Output voltage: -0.1...3.5V
Produkt ist nicht verfügbar
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NCP51402MNTXG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3D07C12B0C740C7&compId=NCP51402.pdf?ci_sign=92f6c13686655bd910fe7a5d5ef37d86d09ebda9 Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: -40...125°C
Application: for DDR memories
Operating voltage: 0.5...1.8/2.375...5.5V DC
Output voltage: -0.1...3.5V
Produkt ist nicht verfügbar
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NCP51403MNTXG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3D09F3A503EE0C7&compId=NCP51403.pdf?ci_sign=1a073962d16e4e6e3ed281d2d9a0ddefa4a85f2a Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: max. 150°C
Application: for DDR memories
Operating voltage: 0.5...1.8/2.375...5.5V DC
Output voltage: -0.1...3.5V
Produkt ist nicht verfügbar
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NCV51198PDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3CF16F181FFA0C7&compId=NCP51198.pdf?ci_sign=e8ff3cd234cb04daeb752b60a69eb5bc1f0d6ed2 Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.675÷1.35V
Type of integrated circuit: PMIC
Case: SO8-EP
Mounting: SMD
Operating temperature: -40...125°C
Output current: 1.5A
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Operating voltage: 1.35...2.5/2.2...5.5V DC
Output voltage: 0.675...1.35V
Produkt ist nicht verfügbar
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NCV51199PDR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3CF21820578A0C7&compId=NCP51199.pdf?ci_sign=0235607a1b2a7ba6d27ea4eed3a47f7b6f85c471 Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.75÷2.5V
Type of integrated circuit: PMIC
Case: SO8-EP
Mounting: SMD
Operating temperature: max. 125°C
Output current: 2A
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Operating voltage: 1.5...5.5/4.75...5.5V DC
Output voltage: 0.75...2.5V
Produkt ist nicht verfügbar
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NCV51400MNTXG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3CFEC53E83360C7&compId=NCP51400.pdf?ci_sign=8d88f15eab3db0469f823b03a6cee9429eba9dcc Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: max. 150°C
Application: automotive industry; for DDR memories
Operating voltage: 0.5...1.8/2.375...5.5V DC
Output voltage: -0.1...3.5V
Produkt ist nicht verfügbar
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NCV51400MWTXG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3CFEC53E83360C7&compId=NCP51400.pdf?ci_sign=8d88f15eab3db0469f823b03a6cee9429eba9dcc Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: max. 150°C
Application: automotive industry; for DDR memories
Operating voltage: 0.5...1.8/2.375...5.5V DC
Output voltage: -0.1...3.5V
Produkt ist nicht verfügbar
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ESDL2012MX4T5G ONSEMI ESDL2012.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.4÷2.1V; bidirectional; 0201; reel,tape
Type of diode: TVS
Max. off-state voltage: 1V
Breakdown voltage: 1.4...2.1V
Semiconductor structure: bidirectional
Case: 0201
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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sm05t1g sm05t1g ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BF135A03E020CE&compId=SMxxT1G.PDF?ci_sign=6a7b14d4b2c2df4bd6e7af10e7ffedf1b82af9c5 description Category: Protection diodes - arrays
Description: Diode: TVS array; 6.7V; 17A; 300W; double,common anode; SOT23; ESD
Type of diode: TVS array
Breakdown voltage: 6.7V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5V
Kind of package: reel; tape
Leakage current: 10µA
Max. forward impulse current: 17A
Version: ESD
auf Bestellung 4150 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
414+0.17 EUR
528+0.14 EUR
692+0.1 EUR
736+0.097 EUR
861+0.083 EUR
1064+0.067 EUR
1124+0.064 EUR
Mindestbestellmenge: 264
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SZSM05T1G ONSEMI sm05t1-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2÷7.3V; 300W; double,common anode; SOT23
Type of diode: TVS array
Breakdown voltage: 6.2...7.3V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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FDP22N50N FDP22N50N ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE91A81D4CFE259&compId=FDP22N50N.pdf?ci_sign=d78cca91e5c318fcd01fc984ce6f1c626cac85a7 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.2A
Power dissipation: 312.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 26 Stücke:
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15+4.86 EUR
23+3.2 EUR
24+3.03 EUR
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H11D1SR2M H11D1SR2M ONSEMI moc8204m-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Manufacturer series: H11DX
Type of optocoupler: optocoupler
Mounting: SMD
Case: PDIP6
Max. off-state voltage: 6V
Collector-emitter voltage: 300V
Turn-on time: 5µs
Turn-off time: 5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 20%@10mA
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
53+1.36 EUR
84+0.86 EUR
92+0.78 EUR
117+0.61 EUR
123+0.58 EUR
500+0.56 EUR
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H11D1M H11D1M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F927114C0C7&compId=H11D1M.pdf?ci_sign=8d5cadc8b9adac6eacf03b05d285bd066193df59 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP6
Max. off-state voltage: 6V
Turn-on time: 5µs
Turn-off time: 5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 20%@10mA
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
25+2.86 EUR
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H11D1SR2VM ONSEMI moc8204m-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Manufacturer series: H11DX
Type of optocoupler: optocoupler
Mounting: SMD
Case: PDIP6
Max. off-state voltage: 6V
Collector-emitter voltage: 300V
Turn-on time: 5µs
Turn-off time: 5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 20%@10mA
Produkt ist nicht verfügbar
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FFSD0865B ONSEMI ffsd0865b-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 11.6A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Load current: 11.6A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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FFSD0865B-F085 ONSEMI ffsd0865b-f085-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 11.6A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Load current: 11.6A
Semiconductor structure: single diode
Application: automotive industry
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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MURF860G ONSEMI mur820-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; TO220FP-2; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220FP-2
Reverse recovery time: 60ns
Produkt ist nicht verfügbar
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SZBZX84C3V0LT1G SZBZX84C3V0LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17 Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3V; SMD; reel,tape; SOT23; single diode; 10uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: BZX84C
Application: automotive industry
auf Bestellung 2373 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.16 EUR
589+0.12 EUR
758+0.094 EUR
1185+0.06 EUR
1880+0.038 EUR
2272+0.031 EUR
2373+0.03 EUR
Mindestbestellmenge: 455
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SZBZX84C3V0ET1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
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FDP80N06 FDP80N06 ONSEMI fdp80n06-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 320A; 176W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 65A
Pulsed drain current: 320A
Power dissipation: 176W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhancement
Technology: DMOS; UniFET™
Produkt ist nicht verfügbar
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ES2B ONSEMI es2d-d.pdf es2a.pdf FAIRS47395-1.pdf?t.download=true&u=5oefqw ES2_1.pdf ES2A SERIES_L2102.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Case: SMB
Features of semiconductor devices: fast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 18pF
Reverse recovery time: 20ns
Leakage current: 0.35mA
Max. forward voltage: 0.9V
Power dissipation: 1.66W
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NCP1360BABCYSNT1G ONSEMI ncp1360-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP6; flyback; 6.5÷26VDC
Type of integrated circuit: PMIC
Output current: -300...500mA
Case: TSOP6
Mounting: SMD
Frequency: 75...85kHz
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 6.5...26V DC
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NCP1360BBCCYSNT1G ONSEMI ncp1360-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP6; flyback; 6.5÷26VDC
Type of integrated circuit: PMIC
Output current: -300...500mA
Case: TSOP6
Mounting: SMD
Frequency: 103...117kHz
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 6.5...26V DC
Produkt ist nicht verfügbar
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LM358AN LM358AN ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8EF7F57E8235EA&compId=LM358AN.pdf?ci_sign=df2c93d82bbc7908652a40adf116c705c4cdcadb Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 0.6V/μs
Operating temperature: 0...70°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Produkt ist nicht verfügbar
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ADT7461ARMZ-R7 ONSEMI adt7461-d.pdf Category: Temperature transducers
Description: IC: temperature sensor; local,remote; MSOP8; SMD; Uoper: 3÷5.5V
Type of integrated circuit: temperature sensor
Case: MSOP8
Mounting: SMD
Supply voltage: 3...5.5V
Integrated circuit features: programmable
Kind of temperature sensor: local; remote
DC supply current: 215µA
Operating voltage: 3...5.5V
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+4.9 EUR
Mindestbestellmenge: 1000
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NCP1342AMDCCDR2G NCP1342AMDCCDR2G ONSEMI ncp1342-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback; 9÷28VDC
Type of integrated circuit: PMIC
Output current: -500...800mA
Mounting: SMD
Case: SO8
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V DC
Produkt ist nicht verfügbar
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NCP1090DBRG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB5E00E852EC080D6&compId=NCP1090.PDF?ci_sign=ab9aa4ff7dc543a1b8e2d586d6352ad75c005ac7 Category: ETHERNET interfaces -integrated circuits
Description: IC: PoE PD controller; TSSOP8; -40÷85°C; 57VDC; Number of ports: 1
Type of integrated circuit: PoE PD controller
Supply voltage: 57V DC
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Communictions protocol: Ethernet; IEEE 802.3af
Number of ports: 1
Produkt ist nicht verfügbar
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NCP1294EDBR2G ONSEMI ncp1294-d.pdf Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1A; 260kHz÷1MHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...125°C
Frequency: 260kHz...1MHz
Topology: boost; flyback
Operating voltage: 3...15V DC
Output current: 1A
Number of channels: 1
Produkt ist nicht verfügbar
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NCP1562ADBR2G ONSEMI ncp1562a-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 100V; Uout: 20V; TSSOP16; forward
Type of integrated circuit: PMIC
Case: TSSOP16
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 222kHz...1MHz
Topology: forward
Output voltage: 20V
Input voltage: 100V
Output current: 1...2.5A
Produkt ist nicht verfügbar
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FCD900N60Z FCD900N60Z ONSEMI fcd900n60z-d.pdf FAIR-S-A0001339544-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 13.5A; 52W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 17nC
Pulsed drain current: 13.5A
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
26+2.83 EUR
38+1.93 EUR
58+1.24 EUR
61+1.17 EUR
400+1.14 EUR
1000+1.13 EUR
Mindestbestellmenge: 26
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NC7SZ18P6X NC7SZ18P6X ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE049100746C0C7&compId=NC7SZ18P6X.pdf?ci_sign=c21da47c7faac7e0a811dc220e5289cdf60939dc Category: Decoders, multiplexers, switches
Description: IC: digital; demultiplexer; Ch: 1; SMD; SC70; 1.65÷5.5VDC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: demultiplexer
Number of channels: 1
Mounting: SMD
Case: SC70
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
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NL7SZ18MUR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E634FB9D6600D3&compId=NL7SZ18-D.pdf?ci_sign=63f3afbf012b6202ff5a8ff5106835d4df347d33 Category: Decoders, multiplexers, switches
Description: IC: digital; 3-state,demultiplexer; Ch: 2; CMOS; SMD; uDFN6
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; demultiplexer
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: uDFN6
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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N01S818HAT22I ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DE5463560D5&compId=N01S818HA-D.pdf?ci_sign=71b05d9763a742aa0ac0a09633e097df4bcc1b27 Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 1.7÷2.2V; TSSOP8; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 1.7...2.2V
Case: TSSOP8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Produkt ist nicht verfügbar
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N25S818HAS21I ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D9865D620D5&compId=N25S818HA-D.pdf?ci_sign=4cdbe5e94bdcd140264ec6fdd0cbf9dae864dcec Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 1.7÷1.95V; SOIC8; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 1.7...1.95V
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Produkt ist nicht verfügbar
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N25S818HAT21I ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D9865D760D5&compId=N25S818HA-D.pdf?ci_sign=30bd689ae2ca609487737490e018d961c759a34d Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 1.7÷1.95V; TSSOP8; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 1.7...1.95V
Case: TSSOP8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Produkt ist nicht verfügbar
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N64S818HAT21I ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D9865DB20D5&compId=N25S818HA-D.pdf?ci_sign=611efefd780a16dcef5e4bd9fcde441336f0db42 Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 1.7÷1.95V; TSSOP8; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64kb SRAM
Memory organisation: 8kx8bit
Operating voltage: 1.7...1.95V
Case: TSSOP8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Produkt ist nicht verfügbar
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FDP075N15A-F102 FDP075N15A-F102 ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED780826848070A6259&compId=FDP075N15A-F102.pdf?ci_sign=9e1a841a590a184f17491d5da0fd011fb1b831c2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 92A
Power dissipation: 333W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.46 EUR
24+3.09 EUR
25+2.92 EUR
Mindestbestellmenge: 17
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MC79M15CDTRKG MC79M15CDTRKG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED38ECA9D7594D5A9E4&compId=MC79M00-D.PDF?ci_sign=c94712a31e2cdab5125d3628d34ea39aae6255d3 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
auf Bestellung 2274 Stücke:
Lieferzeit 14-21 Tag (e)
114+0.63 EUR
164+0.44 EUR
182+0.39 EUR
228+0.31 EUR
241+0.3 EUR
1000+0.29 EUR
Mindestbestellmenge: 114
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MC79M15CTG MC79M15CTG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED38ECA9D7594D5A9E4&compId=MC79M00-D.PDF?ci_sign=c94712a31e2cdab5125d3628d34ea39aae6255d3 Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.3V
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC79M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
99+0.73 EUR
139+0.52 EUR
150+0.47 EUR
Mindestbestellmenge: 99
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MC79M15BDTRKG MC79M15BDTRKG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED38ECA9D7594D5A9E4&compId=MC79M00-D.PDF?ci_sign=c94712a31e2cdab5125d3628d34ea39aae6255d3 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Produkt ist nicht verfügbar
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MCT2EM MCT2EM ONSEMI pVersion=0046&contRep=ZT&docId=E1FC0E61A9AD19F1A303005056AB0C4F&compId=mct2.pdf?ci_sign=647db5680cd67084b2c88717b61b33bda6d9ef49 Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Case: DIP6
CTR@If: 20%@10mA
Collector-emitter voltage: 30V
Turn-on time: 0.3µs
Turn-off time: 0.3µs
Produkt ist nicht verfügbar
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FDS8935 FDS8935 ONSEMI fds8935-d.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -80V; -2.1A; 3.1W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -2.1A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 308mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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74VHCT14AMTCX 74VHCT14AMTCX ONSEMI 74VHCT14A-D.PDF Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: VHCT
Supply voltage: 4.5...5.5V DC
Kind of gate: NOT
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
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74VHCT14AMX 74VHCT14AMX ONSEMI ONSM-S-A0003584994-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 20µA
Family: VHCT
Supply voltage: 4.5...5.5V DC
Kind of gate: NOT
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
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MC74VHCT14ADR2G MC74VHCT14ADR2G ONSEMI mc74vhct14a-d.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Quiescent current: 40µA
Family: VHCT
Supply voltage: 4.5...5.5V DC
Kind of gate: NOT
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
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MC74VHCT14ADTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63369DB2F20D3&compId=MC74VHCT14A-D.pdf?ci_sign=039af97986cc33f1cfa1cf4f44068bd5601cb670 Category: Gates, inverters
Description: IC: digital; hex,inverter,Schmitt trigger; NOT; Ch: 6; IN: 1; SMD
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter; Schmitt trigger
Number of channels: 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Family: VHCT
Supply voltage: 4.5...5.5V DC
Kind of gate: NOT
Kind of package: reel; tape
Manufacturer series: VHCT
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
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FGH75T65SQD-F155 ONSEMI fgh75t65sqd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGH75T65SHD-F155 ONSEMI fgh75t65shd-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGH75T65SQDT-F155 ONSEMI fgh75t65sqdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGH75T65SHDT-F155 ONSEMI fgh75t65shdt-d.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Produkt ist nicht verfügbar
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NTP095N65S3H ONSEMI ntp095n65s3h-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTP095N65S3HF ONSEMI ntp095n65s3hf-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NCP705MT30TCG ONSEMI ncp705-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 500mA; WDFN6; SMD
Operating temperature: -40...125°C
Case: WDFN6
Mounting: SMD
Type of integrated circuit: voltage regulator
Voltage drop: 0.35V
Output current: 0.5A
Number of channels: 1
Tolerance: ±2%
Input voltage: 2.5...5.5V
Output voltage: 3V
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP705
Produkt ist nicht verfügbar
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1SMA5930BT3G 1SMA5930BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67 Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 16V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
auf Bestellung 4200 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
496+0.14 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 417
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1SMA5922BT3G 1SMA5922BT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67 Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 7.5V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
auf Bestellung 3175 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
235+0.3 EUR
304+0.24 EUR
341+0.21 EUR
589+0.12 EUR
2000+0.11 EUR
Mindestbestellmenge: 179
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FQP34N20 ONSM-S-A0003585150-1.pdf?t.download=true&u=5oefqw
FQP34N20
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; 180W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 180W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.95 EUR
Mindestbestellmenge: 9
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RFD12N06RLESM9A pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DEBCBDF03DC745&compId=RFD12N06RLESM.pdf?ci_sign=b329f5809fdc790d1cc6e79cb1df143b63b41d5d
RFD12N06RLESM9A
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; 49W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Power dissipation: 49W
Case: DPAK
Gate-source voltage: ±16V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: UltraFET®
auf Bestellung 1440 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.33 EUR
69+1.05 EUR
92+0.78 EUR
98+0.74 EUR
250+0.71 EUR
Mindestbestellmenge: 54
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NCP51145PDR2G pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3CEE6C66BE280C7&compId=NCP51145.pdf?ci_sign=2bf54601ef8295f1ee1cb715c15bd9b934fbec7a
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.6÷2.5VDC
Type of integrated circuit: PMIC
Case: SO8-EP
Mounting: SMD
Operating temperature: max. 150°C
Output current: 1.8A
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Operating voltage: 1...5.5/4.75...5.5V DC
Output voltage: 0.6...2.5V DC
Produkt ist nicht verfügbar
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NCP51198PDR2G pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3CF16F181FFA0C7&compId=NCP51198.pdf?ci_sign=e8ff3cd234cb04daeb752b60a69eb5bc1f0d6ed2
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.675÷1.35V
Type of integrated circuit: PMIC
Case: SO8-EP
Mounting: SMD
Operating temperature: -40...125°C
Output current: 1.5A
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Operating voltage: 1.35...2.5/2.2...5.5V DC
Output voltage: 0.675...1.35V
Produkt ist nicht verfügbar
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NCP51400MNTXG pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3CFEC53E83360C7&compId=NCP51400.pdf?ci_sign=8d88f15eab3db0469f823b03a6cee9429eba9dcc
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: -40...125°C
Application: for DDR memories
Operating voltage: 0.5...1.8/2.375...5.5V DC
Output voltage: -0.1...3.5V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP51401MNTXG pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3D0631DE58240C7&compId=NCP51401.pdf?ci_sign=7103ea287392303e8870a51844711cd98e570658
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: -40...125°C
Application: for DDR memories
Operating voltage: 0.5...1.8/2.375...5.5V DC
Output voltage: -0.1...3.5V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP51402MNTXG pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3D07C12B0C740C7&compId=NCP51402.pdf?ci_sign=92f6c13686655bd910fe7a5d5ef37d86d09ebda9
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: -40...125°C
Application: for DDR memories
Operating voltage: 0.5...1.8/2.375...5.5V DC
Output voltage: -0.1...3.5V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP51403MNTXG pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3D09F3A503EE0C7&compId=NCP51403.pdf?ci_sign=1a073962d16e4e6e3ed281d2d9a0ddefa4a85f2a
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: max. 150°C
Application: for DDR memories
Operating voltage: 0.5...1.8/2.375...5.5V DC
Output voltage: -0.1...3.5V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV51198PDR2G pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3CF16F181FFA0C7&compId=NCP51198.pdf?ci_sign=e8ff3cd234cb04daeb752b60a69eb5bc1f0d6ed2
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.675÷1.35V
Type of integrated circuit: PMIC
Case: SO8-EP
Mounting: SMD
Operating temperature: -40...125°C
Output current: 1.5A
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Operating voltage: 1.35...2.5/2.2...5.5V DC
Output voltage: 0.675...1.35V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV51199PDR2G pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3CF21820578A0C7&compId=NCP51199.pdf?ci_sign=0235607a1b2a7ba6d27ea4eed3a47f7b6f85c471
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: 0.75÷2.5V
Type of integrated circuit: PMIC
Case: SO8-EP
Mounting: SMD
Operating temperature: max. 125°C
Output current: 2A
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Operating voltage: 1.5...5.5/4.75...5.5V DC
Output voltage: 0.75...2.5V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV51400MNTXG pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3CFEC53E83360C7&compId=NCP51400.pdf?ci_sign=8d88f15eab3db0469f823b03a6cee9429eba9dcc
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: max. 150°C
Application: automotive industry; for DDR memories
Operating voltage: 0.5...1.8/2.375...5.5V DC
Output voltage: -0.1...3.5V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV51400MWTXG pVersion=0046&contRep=ZT&docId=005056AB90B41EDBB3CFEC53E83360C7&compId=NCP51400.pdf?ci_sign=8d88f15eab3db0469f823b03a6cee9429eba9dcc
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Kind of integrated circuit: DDR memory termination regulator
Output current: 3A
Mounting: SMD
Case: DFN10
Number of channels: 1
Operating temperature: max. 150°C
Application: automotive industry; for DDR memories
Operating voltage: 0.5...1.8/2.375...5.5V DC
Output voltage: -0.1...3.5V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ESDL2012MX4T5G ESDL2012.pdf
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.4÷2.1V; bidirectional; 0201; reel,tape
Type of diode: TVS
Max. off-state voltage: 1V
Breakdown voltage: 1.4...2.1V
Semiconductor structure: bidirectional
Case: 0201
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
sm05t1g description pVersion=0046&contRep=ZT&docId=005056AB281E1EDC91BF135A03E020CE&compId=SMxxT1G.PDF?ci_sign=6a7b14d4b2c2df4bd6e7af10e7ffedf1b82af9c5
sm05t1g
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.7V; 17A; 300W; double,common anode; SOT23; ESD
Type of diode: TVS array
Breakdown voltage: 6.7V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5V
Kind of package: reel; tape
Leakage current: 10µA
Max. forward impulse current: 17A
Version: ESD
auf Bestellung 4150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
414+0.17 EUR
528+0.14 EUR
692+0.1 EUR
736+0.097 EUR
861+0.083 EUR
1064+0.067 EUR
1124+0.064 EUR
Mindestbestellmenge: 264
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SZSM05T1G sm05t1-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.2÷7.3V; 300W; double,common anode; SOT23
Type of diode: TVS array
Breakdown voltage: 6.2...7.3V
Peak pulse power dissipation: 0.3kW
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDP22N50N pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BFE91A81D4CFE259&compId=FDP22N50N.pdf?ci_sign=d78cca91e5c318fcd01fc984ce6f1c626cac85a7
FDP22N50N
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.2A; 312.5W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.2A
Power dissipation: 312.5W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.86 EUR
23+3.2 EUR
24+3.03 EUR
Mindestbestellmenge: 15
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H11D1SR2M moc8204m-d.pdf
H11D1SR2M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Manufacturer series: H11DX
Type of optocoupler: optocoupler
Mounting: SMD
Case: PDIP6
Max. off-state voltage: 6V
Collector-emitter voltage: 300V
Turn-on time: 5µs
Turn-off time: 5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 20%@10mA
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
53+1.36 EUR
84+0.86 EUR
92+0.78 EUR
117+0.61 EUR
123+0.58 EUR
500+0.56 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
H11D1M pVersion=0046&contRep=ZT&docId=005056AB90B41EDBBFFD2F927114C0C7&compId=H11D1M.pdf?ci_sign=8d5cadc8b9adac6eacf03b05d285bd066193df59
H11D1M
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; DIP6
Type of optocoupler: optocoupler
Mounting: THT
Case: DIP6
Max. off-state voltage: 6V
Turn-on time: 5µs
Turn-off time: 5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 20%@10mA
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
25+2.86 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
H11D1SR2VM moc8204m-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 300V
Manufacturer series: H11DX
Type of optocoupler: optocoupler
Mounting: SMD
Case: PDIP6
Max. off-state voltage: 6V
Collector-emitter voltage: 300V
Turn-on time: 5µs
Turn-off time: 5µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 20%@10mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FFSD0865B ffsd0865b-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 11.6A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Load current: 11.6A
Semiconductor structure: single diode
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FFSD0865B-F085 ffsd0865b-f085-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 11.6A; reel,tape
Technology: SiC
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Max. off-state voltage: 650V
Load current: 11.6A
Semiconductor structure: single diode
Application: automotive industry
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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MURF860G mur820-d.pdf
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 8A; tube; TO220FP-2; 60ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 8A
Semiconductor structure: single diode
Kind of package: tube
Case: TO220FP-2
Reverse recovery time: 60ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZBZX84C3V0LT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CD843106A6E0D8&compId=BZX84B_BZX84C.PDF?ci_sign=43024a7d3781c2291565a68c90fd78feea6ddb17
SZBZX84C3V0LT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3V; SMD; reel,tape; SOT23; single diode; 10uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 10µA
Manufacturer series: BZX84C
Application: automotive industry
auf Bestellung 2373 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
455+0.16 EUR
589+0.12 EUR
758+0.094 EUR
1185+0.06 EUR
1880+0.038 EUR
2272+0.031 EUR
2373+0.03 EUR
Mindestbestellmenge: 455
Im Einkaufswagen  Stück im Wert von  UAH
SZBZX84C3V0ET1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CDF40CF92A80D8&compId=BZX84CxxET1G.PDF?ci_sign=20d888150f9be2b3e7308e1b8fa08e23f61272cc
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 3V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 3V
Mounting: SMD
Tolerance: ±7%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Manufacturer series: BZX84CxxET1G
Application: automotive industry
Produkt ist nicht verfügbar
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FDP80N06 fdp80n06-d.pdf
FDP80N06
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 65A; Idm: 320A; 176W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 65A
Pulsed drain current: 320A
Power dissipation: 176W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 10mΩ
Mounting: THT
Gate charge: 74nC
Kind of package: tube
Kind of channel: enhancement
Technology: DMOS; UniFET™
Produkt ist nicht verfügbar
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ES2B es2d-d.pdf es2a.pdf FAIRS47395-1.pdf?t.download=true&u=5oefqw ES2_1.pdf ES2A SERIES_L2102.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 2A; 20ns; SMB; Ufmax: 0.9V; Ifsm: 50A
Case: SMB
Features of semiconductor devices: fast switching
Type of diode: rectifying
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 18pF
Reverse recovery time: 20ns
Leakage current: 0.35mA
Max. forward voltage: 0.9V
Power dissipation: 1.66W
Load current: 2A
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NCP1360BABCYSNT1G ncp1360-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP6; flyback; 6.5÷26VDC
Type of integrated circuit: PMIC
Output current: -300...500mA
Case: TSOP6
Mounting: SMD
Frequency: 75...85kHz
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 6.5...26V DC
Produkt ist nicht verfügbar
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NCP1360BBCCYSNT1G ncp1360-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; TSOP6; flyback; 6.5÷26VDC
Type of integrated circuit: PMIC
Output current: -300...500mA
Case: TSOP6
Mounting: SMD
Frequency: 103...117kHz
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 6.5...26V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LM358AN pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8EF7F57E8235EA&compId=LM358AN.pdf?ci_sign=df2c93d82bbc7908652a40adf116c705c4cdcadb
LM358AN
Hersteller: ONSEMI
Category: THT operational amplifiers
Description: IC: operational amplifier; 1.1MHz; Ch: 2; DIP8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1.1MHz
Mounting: THT
Number of channels: 2
Case: DIP8
Slew rate: 0.6V/μs
Operating temperature: 0...70°C
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Produkt ist nicht verfügbar
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ADT7461ARMZ-R7 adt7461-d.pdf
Hersteller: ONSEMI
Category: Temperature transducers
Description: IC: temperature sensor; local,remote; MSOP8; SMD; Uoper: 3÷5.5V
Type of integrated circuit: temperature sensor
Case: MSOP8
Mounting: SMD
Supply voltage: 3...5.5V
Integrated circuit features: programmable
Kind of temperature sensor: local; remote
DC supply current: 215µA
Operating voltage: 3...5.5V
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+4.9 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
NCP1342AMDCCDR2G ncp1342-d.pdf
NCP1342AMDCCDR2G
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; SO8; flyback; 9÷28VDC
Type of integrated circuit: PMIC
Output current: -500...800mA
Mounting: SMD
Case: SO8
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 9...28V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP1090DBRG pVersion=0046&contRep=ZT&docId=005056AB281E1EDEB5E00E852EC080D6&compId=NCP1090.PDF?ci_sign=ab9aa4ff7dc543a1b8e2d586d6352ad75c005ac7
Hersteller: ONSEMI
Category: ETHERNET interfaces -integrated circuits
Description: IC: PoE PD controller; TSSOP8; -40÷85°C; 57VDC; Number of ports: 1
Type of integrated circuit: PoE PD controller
Supply voltage: 57V DC
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Communictions protocol: Ethernet; IEEE 802.3af
Number of ports: 1
Produkt ist nicht verfügbar
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NCP1294EDBR2G ncp1294-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; 1A; 260kHz÷1MHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Mounting: SMD
Case: TSSOP16
Operating temperature: -40...125°C
Frequency: 260kHz...1MHz
Topology: boost; flyback
Operating voltage: 3...15V DC
Output current: 1A
Number of channels: 1
Produkt ist nicht verfügbar
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NCP1562ADBR2G ncp1562a-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 100V; Uout: 20V; TSSOP16; forward
Type of integrated circuit: PMIC
Case: TSSOP16
Mounting: SMD
Operating temperature: -40...125°C
Frequency: 222kHz...1MHz
Topology: forward
Output voltage: 20V
Input voltage: 100V
Output current: 1...2.5A
Produkt ist nicht verfügbar
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FCD900N60Z fcd900n60z-d.pdf FAIR-S-A0001339544-1.pdf?t.download=true&u=5oefqw
FCD900N60Z
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 13.5A; 52W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Power dissipation: 52W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 17nC
Pulsed drain current: 13.5A
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
26+2.83 EUR
38+1.93 EUR
58+1.24 EUR
61+1.17 EUR
400+1.14 EUR
1000+1.13 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
NC7SZ18P6X pVersion=0046&contRep=ZT&docId=005056AB90B41EDAAAE049100746C0C7&compId=NC7SZ18P6X.pdf?ci_sign=c21da47c7faac7e0a811dc220e5289cdf60939dc
NC7SZ18P6X
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; demultiplexer; Ch: 1; SMD; SC70; 1.65÷5.5VDC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: demultiplexer
Number of channels: 1
Mounting: SMD
Case: SC70
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Operating temperature: -40...85°C
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NL7SZ18MUR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E634FB9D6600D3&compId=NL7SZ18-D.pdf?ci_sign=63f3afbf012b6202ff5a8ff5106835d4df347d33
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 3-state,demultiplexer; Ch: 2; CMOS; SMD; uDFN6
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; demultiplexer
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: uDFN6
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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N01S818HAT22I pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79DE5463560D5&compId=N01S818HA-D.pdf?ci_sign=71b05d9763a742aa0ac0a09633e097df4bcc1b27
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 1.7÷2.2V; TSSOP8; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 1.7...2.2V
Case: TSSOP8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Produkt ist nicht verfügbar
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N25S818HAS21I pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D9865D620D5&compId=N25S818HA-D.pdf?ci_sign=4cdbe5e94bdcd140264ec6fdd0cbf9dae864dcec
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 1.7÷1.95V; SOIC8; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 1.7...1.95V
Case: SOIC8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Produkt ist nicht verfügbar
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N25S818HAT21I pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D9865D760D5&compId=N25S818HA-D.pdf?ci_sign=30bd689ae2ca609487737490e018d961c759a34d
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 1.7÷1.95V; TSSOP8; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 1.7...1.95V
Case: TSSOP8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Produkt ist nicht verfügbar
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N64S818HAT21I pVersion=0046&contRep=ZT&docId=005056AB281E1EDE80A79D9865DB20D5&compId=N25S818HA-D.pdf?ci_sign=611efefd780a16dcef5e4bd9fcde441336f0db42
Hersteller: ONSEMI
Category: Serial SRAM memories - integrated circ.
Description: IC: SRAM memory; 64kbSRAM; 8kx8bit; 1.7÷1.95V; TSSOP8; -40÷85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 64kb SRAM
Memory organisation: 8kx8bit
Operating voltage: 1.7...1.95V
Case: TSSOP8
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: serial
Produkt ist nicht verfügbar
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FDP075N15A-F102 pVersion=0046&contRep=ZT&docId=005056AB752F1ED780826848070A6259&compId=FDP075N15A-F102.pdf?ci_sign=9e1a841a590a184f17491d5da0fd011fb1b831c2
FDP075N15A-F102
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 92A; 333W; TO220AB
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 92A
Power dissipation: 333W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: THT
Gate charge: 0.1µC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.46 EUR
24+3.09 EUR
25+2.92 EUR
Mindestbestellmenge: 17
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MC79M15CDTRKG pVersion=0046&contRep=ZT&docId=005056AB752F1ED38ECA9D7594D5A9E4&compId=MC79M00-D.PDF?ci_sign=c94712a31e2cdab5125d3628d34ea39aae6255d3
MC79M15CDTRKG
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
auf Bestellung 2274 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
164+0.44 EUR
182+0.39 EUR
228+0.31 EUR
241+0.3 EUR
1000+0.29 EUR
Mindestbestellmenge: 114
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MC79M15CTG pVersion=0046&contRep=ZT&docId=005056AB752F1ED38ECA9D7594D5A9E4&compId=MC79M00-D.PDF?ci_sign=c94712a31e2cdab5125d3628d34ea39aae6255d3
MC79M15CTG
Hersteller: ONSEMI
Category: Fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; TO220AB; THT; tube
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.3V
Output voltage: -15V
Output current: 0.5A
Case: TO220AB
Mounting: THT
Manufacturer series: MC79M00
Kind of package: tube
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Heatsink thickness: 0.508...0.61mm
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
139+0.52 EUR
150+0.47 EUR
Mindestbestellmenge: 99
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MC79M15BDTRKG pVersion=0046&contRep=ZT&docId=005056AB752F1ED38ECA9D7594D5A9E4&compId=MC79M00-D.PDF?ci_sign=c94712a31e2cdab5125d3628d34ea39aae6255d3
MC79M15BDTRKG
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; linear,fixed; -15V; 0.5A; DPAK; SMD; MC79M00
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.1V
Output voltage: -15V
Output current: 0.5A
Case: DPAK
Mounting: SMD
Manufacturer series: MC79M00
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Produkt ist nicht verfügbar
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MCT2EM pVersion=0046&contRep=ZT&docId=E1FC0E61A9AD19F1A303005056AB0C4F&compId=mct2.pdf?ci_sign=647db5680cd67084b2c88717b61b33bda6d9ef49
MCT2EM
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
Case: DIP6
CTR@If: 20%@10mA
Collector-emitter voltage: 30V
Turn-on time: 0.3µs
Turn-off time: 0.3µs
Produkt ist nicht verfügbar
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FDS8935 fds8935-d.pdf
FDS8935
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -80V; -2.1A; 3.1W; SO8
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -2.1A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 308mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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74VHCT14AMTCX 74VHCT14A-D.PDF
74VHCT14AMTCX
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; TSSOP14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...85°C
Family: VHCT
Supply voltage: 4.5...5.5V DC
Kind of gate: NOT
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
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74VHCT14AMX ONSM-S-A0003584994-1.pdf?t.download=true&u=5oefqw
74VHCT14AMX
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; SMD; SO14; 4.5÷5.5VDC; -40÷85°C; 20uA
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Mounting: SMD
Case: SO14
Operating temperature: -40...85°C
Quiescent current: 20µA
Family: VHCT
Supply voltage: 4.5...5.5V DC
Kind of gate: NOT
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
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MC74VHCT14ADR2G mc74vhct14a-d.pdf
MC74VHCT14ADR2G
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; IN: 1; CMOS,TTL; SMD; SO14; 4.5÷5.5VDC; 40uA
Type of integrated circuit: digital
Number of channels: hex; 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -55...125°C
Quiescent current: 40µA
Family: VHCT
Supply voltage: 4.5...5.5V DC
Kind of gate: NOT
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
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MC74VHCT14ADTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E63369DB2F20D3&compId=MC74VHCT14A-D.pdf?ci_sign=039af97986cc33f1cfa1cf4f44068bd5601cb670
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; hex,inverter,Schmitt trigger; NOT; Ch: 6; IN: 1; SMD
Type of integrated circuit: digital
Kind of integrated circuit: hex; inverter; Schmitt trigger
Number of channels: 6
Number of inputs: 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -55...125°C
Family: VHCT
Supply voltage: 4.5...5.5V DC
Kind of gate: NOT
Kind of package: reel; tape
Manufacturer series: VHCT
Kind of input: with Schmitt trigger
Produkt ist nicht verfügbar
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FGH75T65SQD-F155 fgh75t65sqd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGH75T65SHD-F155 fgh75t65shd-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGH75T65SQDT-F155 fgh75t65sqdt-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 188W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 188W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 300A
Mounting: THT
Gate charge: 128nC
Kind of package: tube
Produkt ist nicht verfügbar
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FGH75T65SHDT-F155 fgh75t65shdt-d.pdf
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 227W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 75A
Power dissipation: 227W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 123nC
Kind of package: tube
Produkt ist nicht verfügbar
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NTP095N65S3H ntp095n65s3h-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTP095N65S3HF ntp095n65s3hf-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NCP705MT30TCG ncp705-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 500mA; WDFN6; SMD
Operating temperature: -40...125°C
Case: WDFN6
Mounting: SMD
Type of integrated circuit: voltage regulator
Voltage drop: 0.35V
Output current: 0.5A
Number of channels: 1
Tolerance: ±2%
Input voltage: 2.5...5.5V
Output voltage: 3V
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP705
Produkt ist nicht verfügbar
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1SMA5930BT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67
1SMA5930BT3G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 16V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 16V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
auf Bestellung 4200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
496+0.14 EUR
725+0.099 EUR
770+0.093 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
1SMA5922BT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC81949BABC3B320C7&compId=1SMA59xxBT3.PDF?ci_sign=ae78e9fa686988a769322b3766b51c193588ea67
1SMA5922BT3G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 1.5W; 7.5V; SMD; reel,tape; SMA; single diode
Type of diode: Zener
Power dissipation: 1.5W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMA
Semiconductor structure: single diode
Manufacturer series: 1SMA59xxBT3G
auf Bestellung 3175 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
235+0.3 EUR
304+0.24 EUR
341+0.21 EUR
589+0.12 EUR
2000+0.11 EUR
Mindestbestellmenge: 179
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