| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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SS26 | ONSEMI |
 Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape Mounting: SMD Max. forward impulse current: 50A Max. forward voltage: 0.7V Max. off-state voltage: 60V Load current: 2A Kind of package: reel; tape Semiconductor structure: single diode Case: SMB Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SMMUN2213LT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 47kΩ Base-emitter resistor: 47kΩ Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| CAT93C86BHU4I-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 16kbEEPROM; Microwire; 2kx8/1kx16bit; 1.8÷5.5V Mounting: SMD Access time: 100ns Type of integrated circuit: EEPROM memory Operating temperature: -40...85°C Clock frequency: 4MHz Memory: 16kb EEPROM Kind of interface: serial Memory organisation: 2kx8/1kx16bit Kind of package: reel; tape Case: uDFN8 Interface: Microwire Operating voltage: 1.8...5.5V Kind of memory: EEPROM |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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NCV33063AVDR2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; Uout: 3÷40V; 1.5A; SO8; SMD; 33kHz; Ch: 1 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Output voltage: 3...40V Output current: 1.5A Case: SO8 Mounting: SMD Frequency: 33kHz Number of channels: 1 Kind of package: reel; tape Supply voltage: 1.5V Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MJD210RLG | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 25V; 5A; 12.5W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 5A Power dissipation: 12.5W Case: DPAK Current gain: 45...180 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MJD210T4G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 25V; 5A; 12.5W; DPAK Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 5A Power dissipation: 12.5W Case: DPAK Current gain: 45...180 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NJVMJD210T4G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 25V; 5A; 12.5W; DPAK; automotive industry Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 25V Collector current: 5A Power dissipation: 12.5W Case: DPAK Current gain: 45...180 Mounting: SMD Kind of package: reel; tape Frequency: 3MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NJT4030PT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 3A Power dissipation: 2W Case: SOT223-4; TO261-4 Current gain: 200...400 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Manufacturer standard package: 1000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MMBF4391LT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 30V; 50mA; 0.225W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 50mA Power dissipation: 0.225W Case: SOT23 Gate-source voltage: -30V On-state resistance: 30Ω Mounting: SMD Kind of package: reel; tape Gate current: 50mA |
auf Bestellung 1852 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSR57 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 20mA; 0.25W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 20mA Power dissipation: 0.25W Case: SOT23 Gate-source voltage: -40V On-state resistance: 40Ω Mounting: SMD Kind of package: reel; tape Gate current: 50mA |
auf Bestellung 848 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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J109 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-JFET; unipolar; 40mA; 0.625W; TO92; Igt: 10mA Mounting: THT Gate current: 10mA Power dissipation: 0.625W Polarisation: unipolar Drain current: 40mA Type of transistor: N-JFET Gate-source voltage: -25V Kind of package: tape Case: TO92 On-state resistance: 12Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MMBFJ110 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 10mA; 0.46W; SOT23; Igt: 10mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 10mA Power dissipation: 0.46W Case: SOT23 Gate-source voltage: -25V On-state resistance: 18Ω Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
auf Bestellung 2809 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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BSR58 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 8mA; 0.25W; SOT23; Igt: 50mA Type of transistor: N-JFET Polarisation: unipolar Drain current: 8mA Power dissipation: 0.25W Case: SOT23 Gate-source voltage: -40V On-state resistance: 60Ω Mounting: SMD Kind of package: reel; tape Gate current: 50mA |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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NTMS5P02R2G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.4A; Idm: -20A; 1.47W; SO8 Case: SO8 Power dissipation: 1.47W Gate charge: 20nC Polarisation: unipolar Drain current: -5.4A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±10V Kind of package: reel; tape On-state resistance: 33mΩ Mounting: SMD Pulsed drain current: -20A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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NVMS5P02R2G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.4A; Idm: -20A; 1.47W; SO8 Case: SO8 Power dissipation: 1.47W Gate charge: 20nC Polarisation: unipolar Drain current: -5.4A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±10V Kind of package: reel; tape On-state resistance: 33mΩ Mounting: SMD Pulsed drain current: -20A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FODM352 | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 3.75kV; Uce: 300V Collector-emitter voltage: 300V CTR@If: 1000-5000%@1mA Kind of output: Darlington Insulation voltage: 3.75kV Max. off-state voltage: 6V Type of optocoupler: optocoupler Turn-on time: 20µs Case: SOP4 Turn-off time: 0.1ms Number of channels: 1 Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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NCV7428D13R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; system basis chip SBC; 3.3÷5VDC; LIN; SMD; SO8 Operating temperature: -40...125°C Mounting: SMD Supply voltage: 3.3...5V DC Type of integrated circuit: interface Integrated circuit features: integrated voltage regulator; LIN transceiver Application: automotive industry Kind of package: reel; tape Case: SO8 Interface: LIN Kind of integrated circuit: system basis chip SBC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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NCV7428MW3R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; system basis chip SBC; 4÷28VDC; LIN; SMD; DFN8 Operating temperature: -40...125°C Mounting: SMD Supply voltage: 4...28V DC Type of integrated circuit: interface Integrated circuit features: integrated voltage regulator; LIN transceiver Application: automotive industry Kind of package: reel; tape Case: DFN8 Interface: LIN Kind of integrated circuit: system basis chip SBC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NSVDTC114YM3T5G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.6W Case: SOT723 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ Manufacturer standard package: 8000pcs. Application: automotive industry Current gain: 80...140 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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NCP5183DR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-side; low-side Case: SO8 Output current: -4.3...4.3A Supply voltage: 9...18V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 40ns Pulse fall time: 40ns Voltage class: 600V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MBR2535CTLG | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 35V; 12.5Ax2; TO220AB; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 35V Load current: 12.5A x2 Semiconductor structure: common cathode; double Case: TO220AB Max. forward voltage: 0.41V Max. load current: 25A Max. forward impulse current: 150A Kind of package: tube |
auf Bestellung 39 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MMBZ5258BLT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 36V; SMD; SOT23; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 36V Mounting: SMD Tolerance: ±5% Case: SOT23 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMBZ52xxBLT1G |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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RB751V40T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Kind of package: reel; tape |
auf Bestellung 995 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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NSVRB751V40T1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape Type of diode: Schottky switching Case: SOD323 Mounting: SMD Max. off-state voltage: 40V Load current: 30mA Semiconductor structure: single diode Max. forward voltage: 0.37V Max. forward impulse current: 0.5A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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2SC3646S-TD-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 1A Power dissipation: 0.5W Case: SOT89 Mounting: SMD Kind of package: reel; tape Frequency: 120MHz Current gain: 140...280 |
auf Bestellung 894 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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NRVBS3200NT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape Type of diode: Schottky rectifying Case: SMB Mounting: SMD Max. off-state voltage: 200V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.86V Kind of package: reel; tape Max. forward impulse current: 100A Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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FAN73711MX | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; H-bridge; high-side,gate driver; MillerDrive™; SOP8 Type of integrated circuit: driver Topology: H-bridge Kind of integrated circuit: gate driver; high-side Technology: MillerDrive™ Case: SOP8 Output current: -4...4A Number of channels: 1 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 50ns Pulse fall time: 40ns Kind of package: reel; tape Voltage class: 600V Protection: undervoltage UVP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MMUN2131LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.246W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ |
auf Bestellung 117 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| MUN2131T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 2.2kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 338mW Case: SC59 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Manufacturer standard package: 3000pcs. Current gain: 8...15 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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NSVMMUN2131LT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.4W Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Manufacturer standard package: 3000pcs. Application: automotive industry Current gain: 8...15 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 1N5360BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 25V; CASE017AA; single diode; bulk; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 25V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: bulk Manufacturer series: 1N53xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| 1N5360BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 5W; 25V; CASE017AA; single diode; reel,tape; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 25V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N53xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| 1N459ATR | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 200V; 0.5A; Ifsm: 4A; DO35; reel,tape Type of diode: switching Mounting: THT Max. off-state voltage: 200V Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward impulse current: 4A Case: DO35 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| 1N459A | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 200V; 0.5A; Ifsm: 4A; DO35; bulk Type of diode: switching Mounting: THT Max. off-state voltage: 200V Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward impulse current: 4A Case: DO35 Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| 1N459TR | ONSEMI |
Category: THT universal diodes Description: Diode: switching; THT; 200V; 0.5A; Ifsm: 4A; DO35; reel,tape Type of diode: switching Mounting: THT Max. off-state voltage: 200V Load current: 0.5A Semiconductor structure: single diode Features of semiconductor devices: small signal Max. forward impulse current: 4A Case: DO35 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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FDD3672 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 135W; DPAK Mounting: SMD Case: DPAK Power dissipation: 135W Gate charge: 36nC Polarisation: unipolar Technology: UltraFET® Drain current: 44A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 68mΩ |
auf Bestellung 1496 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| PCA9535ECMTTXG | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; WQFN24 Type of integrated circuit: interface Kind of integrated circuit: I/O expander Supply voltage: 1.65...5.5V DC Interface: I2C; SMBus Mounting: SMD Case: WQFN24 Integrated circuit features: PWM Number of channels: 16 Frequency: 1MHz Application: for LED applications Operating temperature: -55...125°C Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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SBC847CDXV6T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.357W; SOT563 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.357W Case: SOT563 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MMSZ5244BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 14V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 14V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxB |
auf Bestellung 1997 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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MMSZ5244ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 14V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 14V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SZMMSZ5244BT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 14V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 14V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxB Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SZMMSZ5244ET1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 14V; SMD; SOD123; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 14V Mounting: SMD Tolerance: ±5% Case: SOD123 Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MMSZ52xxE Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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MMUN2212LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Mounting: SMD Collector-emitter voltage: 50V Base resistor: 22kΩ Power dissipation: 0.246W Polarisation: bipolar Kind of transistor: BRT Type of transistor: NPN Kind of package: reel; tape Base-emitter resistor: 22kΩ Case: SOT23; TO236AB Collector current: 0.1A |
auf Bestellung 2700 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NCP360SNT1G | ONSEMI |
Category: Drivers - integrated circuits Description: IC: driver; TSOP5; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V Type of integrated circuit: driver Case: TSOP5 Mounting: SMD Operating temperature: -40...85°C Input voltage: 1.2...20V Application: USB Threshold on-voltage: 3V Kind of output: transistor |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |
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FFSP0865A | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 13A; TO220-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 13A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.75V Kind of package: tube |
auf Bestellung 246 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NSS12501UW3T2G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 12V; 5A; 1.5W; WDFN3; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 5A Power dissipation: 1.5W Case: WDFN3 Current gain: 250 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| NSS12500UW3T2G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 12V; 5A; 1.5W; WDFN3; automotive industry Collector current: 5A Mounting: SMD Collector-emitter voltage: 12V Power dissipation: 1.5W Polarisation: bipolar Application: automotive industry Type of transistor: PNP Kind of package: reel; tape Case: WDFN3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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SMCJ28CA | ONSEMI |
Category: Bidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 32.9V; 200A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28V Breakdown voltage: 32.9V Max. forward impulse current: 200A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 5µA Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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NCP382HD10AAR2G | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1A; Ch: 2; P-Channel; SMD; SO8; 0÷5.5VDC Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1A Number of channels: 2 Kind of output: P-Channel Mounting: SMD Case: SO8 On-state resistance: 0.14Ω Kind of package: reel; tape Supply voltage: 2.5...5.5V DC Active logical level: high Control voltage: 0...5.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NCP136AFCT105T2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.05V; 700mA; WLCSP6; SMD Type of integrated circuit: voltage regulator Output current: 0.7A Number of channels: 1 Case: WLCSP6 Mounting: SMD Output voltage: 1.05V Tolerance: ±1% Kind of voltage regulator: fixed; LDO; linear Input voltage: 1.05...5.5V Manufacturer series: NCP136 Voltage drop: 60mV Operating temperature: -40...85°C |
Produkt ist nicht verfügbar |
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| NTH4L045N065SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 197A; 94W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 39A Pulsed drain current: 197A Power dissipation: 94W Case: TO247-4 Gate-source voltage: -5...18V On-state resistance: 41mΩ Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
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| NV24M01MUW3VTBG | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 1MbEEPROM; I2C; 128kx8bit; 2.5÷5.5V; 1MHz; uDFN8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 1Mb EEPROM Interface: I2C Memory organisation: 128kx8bit Operating voltage: 2.5...5.5V Mounting: SMD Case: uDFN8 Kind of interface: serial Kind of package: reel; tape Access time: 400ns Operating temperature: -40...125°C Clock frequency: 1MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CAV24M01WE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 1MbEEPROM; I2C; 128kx8bit; 2.5÷5.5V; 1MHz; SOIC8 Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 1Mb EEPROM Interface: I2C Memory organisation: 128kx8bit Operating voltage: 2.5...5.5V Mounting: SMD Case: SOIC8 Kind of interface: serial Kind of package: reel; tape Access time: 900ns Operating temperature: -40...125°C Clock frequency: 1MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| CAV24M01YE-GT3 | ONSEMI |
Category: Serial EEPROM memories - integ. circ. Description: IC: EEPROM memory; 1MbEEPROM; I2C; 128kx8bit; 2.5÷5.5V; 1MHz Type of integrated circuit: EEPROM memory Kind of memory: EEPROM Memory: 1Mb EEPROM Interface: I2C Memory organisation: 128kx8bit Operating voltage: 2.5...5.5V Mounting: SMD Case: TSSOP8 Kind of interface: serial Kind of package: reel; tape Access time: 900ns Operating temperature: -40...125°C Clock frequency: 1MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
 |
DAP222T1G | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SC75; Ufmax: 1.2V; Ifsm: 2A Power dissipation: 0.15W Features of semiconductor devices: ultrafast switching Max. off-state voltage: 80V Load current: 0.1A Max. load current: 0.3A Kind of package: reel; tape Semiconductor structure: common anode; double Case: SC75 Capacitance: 3.5pF Type of diode: rectifying Reverse recovery time: 4ns Mounting: SMD Max. forward impulse current: 2A Max. forward voltage: 1.2V |
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| NTA4151PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 0.301W; SC75 Power dissipation: 0.301W Polarisation: unipolar Drain current: -0.76A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±6V Kind of package: reel; tape Case: SC75 On-state resistance: 0.36Ω Mounting: SMD |
auf Bestellung 5797 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVA4001NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 238mA; Idm: 0.714A; 300mW; SC75 Pulsed drain current: 0.714A Power dissipation: 0.3W Polarisation: unipolar Version: ESD Drain current: 0.238A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: ±10V Kind of package: reel; tape Case: SC75 On-state resistance: 3Ω Mounting: SMD |
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|
|
DTA115EET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416 Base resistor: 100kΩ Power dissipation: 0.2W Polarisation: bipolar Kind of transistor: BRT Type of transistor: PNP Current gain: 80...150 Kind of package: reel; tape Base-emitter resistor: 100kΩ Case: SC75; SOT416 Collector current: 0.1A Mounting: SMD Collector-emitter voltage: 50V |
auf Bestellung 5985 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSVDAP222T1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC75; Ufmax: 1.2V; reel,tape Features of semiconductor devices: small signal Application: automotive industry Max. off-state voltage: 80V Load current: 0.1A Kind of package: reel; tape Semiconductor structure: common cathode; double Case: SC75 Type of diode: switching Reverse recovery time: 4ns Mounting: SMD Max. forward voltage: 1.2V |
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| SBAW56TT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SC75; Ufmax: 1.25V; Ifsm: 0.5A Power dissipation: 0.36W Application: automotive industry Max. off-state voltage: 70V Load current: 0.2A Kind of package: reel; tape Semiconductor structure: common anode; double Leakage current: 50µA Case: SC75 Capacitance: 2pF Type of diode: switching Reverse recovery time: 6ns Mounting: SMD Max. forward impulse current: 0.5A Max. forward voltage: 1.25V |
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Im Einkaufswagen Stück im Wert von UAH |
| SS26 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Mounting: SMD
Max. forward impulse current: 50A
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 2A; reel,tape
Mounting: SMD
Max. forward impulse current: 50A
Max. forward voltage: 0.7V
Max. off-state voltage: 60V
Load current: 2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMB
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
Mindestbestellmenge: 10 Stücke
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| SMMUN2213LT3G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 47kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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| CAT93C86BHU4I-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; Microwire; 2kx8/1kx16bit; 1.8÷5.5V
Mounting: SMD
Access time: 100ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 4MHz
Memory: 16kb EEPROM
Kind of interface: serial
Memory organisation: 2kx8/1kx16bit
Kind of package: reel; tape
Case: uDFN8
Interface: Microwire
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 16kbEEPROM; Microwire; 2kx8/1kx16bit; 1.8÷5.5V
Mounting: SMD
Access time: 100ns
Type of integrated circuit: EEPROM memory
Operating temperature: -40...85°C
Clock frequency: 4MHz
Memory: 16kb EEPROM
Kind of interface: serial
Memory organisation: 2kx8/1kx16bit
Kind of package: reel; tape
Case: uDFN8
Interface: Microwire
Operating voltage: 1.8...5.5V
Kind of memory: EEPROM
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| NCV33063AVDR2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uout: 3÷40V; 1.5A; SO8; SMD; 33kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Output voltage: 3...40V
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 33kHz
Number of channels: 1
Kind of package: reel; tape
Supply voltage: 1.5V
Application: automotive industry
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uout: 3÷40V; 1.5A; SO8; SMD; 33kHz; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Output voltage: 3...40V
Output current: 1.5A
Case: SO8
Mounting: SMD
Frequency: 33kHz
Number of channels: 1
Kind of package: reel; tape
Supply voltage: 1.5V
Application: automotive industry
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| MJD210RLG |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 5A; 12.5W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5A
Power dissipation: 12.5W
Case: DPAK
Current gain: 45...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 5A; 12.5W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5A
Power dissipation: 12.5W
Case: DPAK
Current gain: 45...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJD210T4G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 5A; 12.5W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5A
Power dissipation: 12.5W
Case: DPAK
Current gain: 45...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 5A; 12.5W; DPAK
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5A
Power dissipation: 12.5W
Case: DPAK
Current gain: 45...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Produkt ist nicht verfügbar
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| NJVMJD210T4G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 5A; 12.5W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5A
Power dissipation: 12.5W
Case: DPAK
Current gain: 45...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 5A; 12.5W; DPAK; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 25V
Collector current: 5A
Power dissipation: 12.5W
Case: DPAK
Current gain: 45...180
Mounting: SMD
Kind of package: reel; tape
Frequency: 3MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NJT4030PT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 2W
Case: SOT223-4; TO261-4
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 1000pcs.
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 3A
Power dissipation: 2W
Case: SOT223-4; TO261-4
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Manufacturer standard package: 1000pcs.
Produkt ist nicht verfügbar
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| MMBF4391LT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 50mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 30Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 30V; 50mA; 0.225W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -30V
On-state resistance: 30Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
auf Bestellung 1852 Stücke:
Lieferzeit 14-21 Tag (e)
| BSR57 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.25W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 20mA
Power dissipation: 0.25W
Case: SOT23
Gate-source voltage: -40V
On-state resistance: 40Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 20mA; 0.25W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 20mA
Power dissipation: 0.25W
Case: SOT23
Gate-source voltage: -40V
On-state resistance: 40Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
auf Bestellung 848 Stücke:
Lieferzeit 14-21 Tag (e)
| J109 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 40mA; 0.625W; TO92; Igt: 10mA
Mounting: THT
Gate current: 10mA
Power dissipation: 0.625W
Polarisation: unipolar
Drain current: 40mA
Type of transistor: N-JFET
Gate-source voltage: -25V
Kind of package: tape
Case: TO92
On-state resistance: 12Ω
Category: THT N channel transistors
Description: Transistor: N-JFET; unipolar; 40mA; 0.625W; TO92; Igt: 10mA
Mounting: THT
Gate current: 10mA
Power dissipation: 0.625W
Polarisation: unipolar
Drain current: 40mA
Type of transistor: N-JFET
Gate-source voltage: -25V
Kind of package: tape
Case: TO92
On-state resistance: 12Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBFJ110 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 10mA; 0.46W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 10mA
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: -25V
On-state resistance: 18Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 10mA; 0.46W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 10mA
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: -25V
On-state resistance: 18Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
auf Bestellung 2809 Stücke:
Lieferzeit 14-21 Tag (e)
| BSR58 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 8mA; 0.25W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 8mA
Power dissipation: 0.25W
Case: SOT23
Gate-source voltage: -40V
On-state resistance: 60Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 8mA; 0.25W; SOT23; Igt: 50mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 8mA
Power dissipation: 0.25W
Case: SOT23
Gate-source voltage: -40V
On-state resistance: 60Ω
Mounting: SMD
Kind of package: reel; tape
Gate current: 50mA
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| NTMS5P02R2G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.4A; Idm: -20A; 1.47W; SO8
Case: SO8
Power dissipation: 1.47W
Gate charge: 20nC
Polarisation: unipolar
Drain current: -5.4A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
On-state resistance: 33mΩ
Mounting: SMD
Pulsed drain current: -20A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.4A; Idm: -20A; 1.47W; SO8
Case: SO8
Power dissipation: 1.47W
Gate charge: 20nC
Polarisation: unipolar
Drain current: -5.4A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
On-state resistance: 33mΩ
Mounting: SMD
Pulsed drain current: -20A
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| NVMS5P02R2G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.4A; Idm: -20A; 1.47W; SO8
Case: SO8
Power dissipation: 1.47W
Gate charge: 20nC
Polarisation: unipolar
Drain current: -5.4A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
On-state resistance: 33mΩ
Mounting: SMD
Pulsed drain current: -20A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.4A; Idm: -20A; 1.47W; SO8
Case: SO8
Power dissipation: 1.47W
Gate charge: 20nC
Polarisation: unipolar
Drain current: -5.4A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
On-state resistance: 33mΩ
Mounting: SMD
Pulsed drain current: -20A
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FODM352 |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 3.75kV; Uce: 300V
Collector-emitter voltage: 300V
CTR@If: 1000-5000%@1mA
Kind of output: Darlington
Insulation voltage: 3.75kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Turn-on time: 20µs
Case: SOP4
Turn-off time: 0.1ms
Number of channels: 1
Mounting: SMD
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: Darlington; Uinsul: 3.75kV; Uce: 300V
Collector-emitter voltage: 300V
CTR@If: 1000-5000%@1mA
Kind of output: Darlington
Insulation voltage: 3.75kV
Max. off-state voltage: 6V
Type of optocoupler: optocoupler
Turn-on time: 20µs
Case: SOP4
Turn-off time: 0.1ms
Number of channels: 1
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| NCV7428D13R2G |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; system basis chip SBC; 3.3÷5VDC; LIN; SMD; SO8
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 3.3...5V DC
Type of integrated circuit: interface
Integrated circuit features: integrated voltage regulator; LIN transceiver
Application: automotive industry
Kind of package: reel; tape
Case: SO8
Interface: LIN
Kind of integrated circuit: system basis chip SBC
Category: Interfaces others - integrated circuits
Description: IC: interface; system basis chip SBC; 3.3÷5VDC; LIN; SMD; SO8
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 3.3...5V DC
Type of integrated circuit: interface
Integrated circuit features: integrated voltage regulator; LIN transceiver
Application: automotive industry
Kind of package: reel; tape
Case: SO8
Interface: LIN
Kind of integrated circuit: system basis chip SBC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| NCV7428MW3R2G |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; system basis chip SBC; 4÷28VDC; LIN; SMD; DFN8
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 4...28V DC
Type of integrated circuit: interface
Integrated circuit features: integrated voltage regulator; LIN transceiver
Application: automotive industry
Kind of package: reel; tape
Case: DFN8
Interface: LIN
Kind of integrated circuit: system basis chip SBC
Category: Interfaces others - integrated circuits
Description: IC: interface; system basis chip SBC; 4÷28VDC; LIN; SMD; DFN8
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 4...28V DC
Type of integrated circuit: interface
Integrated circuit features: integrated voltage regulator; LIN transceiver
Application: automotive industry
Kind of package: reel; tape
Case: DFN8
Interface: LIN
Kind of integrated circuit: system basis chip SBC
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| NSVDTC114YM3T5G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Application: automotive industry
Current gain: 80...140
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 600mW; SOT723; R1: 10kΩ
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.6W
Case: SOT723
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Manufacturer standard package: 8000pcs.
Application: automotive industry
Current gain: 80...140
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP5183DR2G |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Output current: -4.3...4.3A
Supply voltage: 9...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 40ns
Pulse fall time: 40ns
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,low-side,gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-side; low-side
Case: SO8
Output current: -4.3...4.3A
Supply voltage: 9...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 40ns
Pulse fall time: 40ns
Voltage class: 600V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MBR2535CTLG |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 35V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.41V
Max. load current: 25A
Max. forward impulse current: 150A
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 12.5Ax2; TO220AB; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 35V
Load current: 12.5A x2
Semiconductor structure: common cathode; double
Case: TO220AB
Max. forward voltage: 0.41V
Max. load current: 25A
Max. forward impulse current: 150A
Kind of package: tube
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
| MMBZ5258BLT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 36V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMBZ52xxBLT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 36V; SMD; SOT23; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Case: SOT23
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMBZ52xxBLT1G
Produkt ist nicht verfügbar
Im Einkaufswagen
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| RB751V40T1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Kind of package: reel; tape
auf Bestellung 995 Stücke:
Lieferzeit 14-21 Tag (e)
| NSVRB751V40T1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 40V; 30mA; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 30mA
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 0.5A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2SC3646S-TD-E |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Current gain: 140...280
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 1A
Power dissipation: 0.5W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 120MHz
Current gain: 140...280
auf Bestellung 894 Stücke:
Lieferzeit 14-21 Tag (e)
| NRVBS3200NT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.86V
Kind of package: reel; tape
Max. forward impulse current: 100A
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.86V
Kind of package: reel; tape
Max. forward impulse current: 100A
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN73711MX |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side,gate driver; MillerDrive™; SOP8
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: gate driver; high-side
Technology: MillerDrive™
Case: SOP8
Output current: -4...4A
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 50ns
Pulse fall time: 40ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; H-bridge; high-side,gate driver; MillerDrive™; SOP8
Type of integrated circuit: driver
Topology: H-bridge
Kind of integrated circuit: gate driver; high-side
Technology: MillerDrive™
Case: SOP8
Output current: -4...4A
Number of channels: 1
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 50ns
Pulse fall time: 40ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MMUN2131LT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.246W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)
| MUN2131T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 338mW
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Manufacturer standard package: 3000pcs.
Current gain: 8...15
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 338mW; SC59; R1: 2.2kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 338mW
Case: SC59
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Manufacturer standard package: 3000pcs.
Current gain: 8...15
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVMMUN2131LT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.4W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 8...15
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.4W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Manufacturer standard package: 3000pcs.
Application: automotive industry
Current gain: 8...15
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5360BG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; CASE017AA; single diode; bulk; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: bulk
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5360BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 25V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 25V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N459ATR |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.5A; Ifsm: 4A; DO35; reel,tape
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.5A; Ifsm: 4A; DO35; reel,tape
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N459A |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.5A; Ifsm: 4A; DO35; bulk
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: bulk
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.5A; Ifsm: 4A; DO35; bulk
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N459TR |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.5A; Ifsm: 4A; DO35; reel,tape
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: reel; tape
Category: THT universal diodes
Description: Diode: switching; THT; 200V; 0.5A; Ifsm: 4A; DO35; reel,tape
Type of diode: switching
Mounting: THT
Max. off-state voltage: 200V
Load current: 0.5A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Max. forward impulse current: 4A
Case: DO35
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDD3672 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 135W; DPAK
Mounting: SMD
Case: DPAK
Power dissipation: 135W
Gate charge: 36nC
Polarisation: unipolar
Technology: UltraFET®
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 68mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 44A; 135W; DPAK
Mounting: SMD
Case: DPAK
Power dissipation: 135W
Gate charge: 36nC
Polarisation: unipolar
Technology: UltraFET®
Drain current: 44A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 68mΩ
auf Bestellung 1496 Stücke:
Lieferzeit 14-21 Tag (e)
| PCA9535ECMTTXG |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; WQFN24
Type of integrated circuit: interface
Kind of integrated circuit: I/O expander
Supply voltage: 1.65...5.5V DC
Interface: I2C; SMBus
Mounting: SMD
Case: WQFN24
Integrated circuit features: PWM
Number of channels: 16
Frequency: 1MHz
Application: for LED applications
Operating temperature: -55...125°C
Kind of package: reel; tape
Category: Interfaces others - integrated circuits
Description: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; WQFN24
Type of integrated circuit: interface
Kind of integrated circuit: I/O expander
Supply voltage: 1.65...5.5V DC
Interface: I2C; SMBus
Mounting: SMD
Case: WQFN24
Integrated circuit features: PWM
Number of channels: 16
Frequency: 1MHz
Application: for LED applications
Operating temperature: -55...125°C
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SBC847CDXV6T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.357W; SOT563
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.357W
Case: SOT563
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MMSZ5244BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 14V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 14V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 14V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 14V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
auf Bestellung 1997 Stücke:
Lieferzeit 14-21 Tag (e)
| MMSZ5244ET1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 14V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 14V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxE
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 14V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 14V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZMMSZ5244BT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 14V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 14V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 14V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 14V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxB
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZMMSZ5244ET1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 14V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 14V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxE
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 14V; SMD; SOD123; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 14V
Mounting: SMD
Tolerance: ±5%
Case: SOD123
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MMSZ52xxE
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMUN2212LT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Power dissipation: 0.246W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Base-emitter resistor: 22kΩ
Case: SOT23; TO236AB
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Mounting: SMD
Collector-emitter voltage: 50V
Base resistor: 22kΩ
Power dissipation: 0.246W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: NPN
Kind of package: reel; tape
Base-emitter resistor: 22kΩ
Case: SOT23; TO236AB
Collector current: 0.1A
auf Bestellung 2700 Stücke:
Lieferzeit 14-21 Tag (e)
| NCP360SNT1G |
|
Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V
Type of integrated circuit: driver
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 1.2...20V
Application: USB
Threshold on-voltage: 3V
Kind of output: transistor
Category: Drivers - integrated circuits
Description: IC: driver; TSOP5; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V
Type of integrated circuit: driver
Case: TSOP5
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 1.2...20V
Application: USB
Threshold on-voltage: 3V
Kind of output: transistor
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| FFSP0865A |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 13A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 13A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 13A; TO220-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 13A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.75V
Kind of package: tube
auf Bestellung 246 Stücke:
Lieferzeit 14-21 Tag (e)
| NSS12501UW3T2G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 5A; 1.5W; WDFN3; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 5A
Power dissipation: 1.5W
Case: WDFN3
Current gain: 250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 5A; 1.5W; WDFN3; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 5A
Power dissipation: 1.5W
Case: WDFN3
Current gain: 250
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Application: automotive industry
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| NSS12500UW3T2G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 5A; 1.5W; WDFN3; automotive industry
Collector current: 5A
Mounting: SMD
Collector-emitter voltage: 12V
Power dissipation: 1.5W
Polarisation: bipolar
Application: automotive industry
Type of transistor: PNP
Kind of package: reel; tape
Case: WDFN3
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 12V; 5A; 1.5W; WDFN3; automotive industry
Collector current: 5A
Mounting: SMD
Collector-emitter voltage: 12V
Power dissipation: 1.5W
Polarisation: bipolar
Application: automotive industry
Type of transistor: PNP
Kind of package: reel; tape
Case: WDFN3
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| SMCJ28CA |
|
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 32.9V; 200A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 32.9V
Max. forward impulse current: 200A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 32.9V; 200A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 32.9V
Max. forward impulse current: 200A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
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| NCP382HD10AAR2G |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 2; P-Channel; SMD; SO8; 0÷5.5VDC
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1A
Number of channels: 2
Kind of output: P-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.14Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1A; Ch: 2; P-Channel; SMD; SO8; 0÷5.5VDC
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1A
Number of channels: 2
Kind of output: P-Channel
Mounting: SMD
Case: SO8
On-state resistance: 0.14Ω
Kind of package: reel; tape
Supply voltage: 2.5...5.5V DC
Active logical level: high
Control voltage: 0...5.5V DC
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| NCP136AFCT105T2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.05V; 700mA; WLCSP6; SMD
Type of integrated circuit: voltage regulator
Output current: 0.7A
Number of channels: 1
Case: WLCSP6
Mounting: SMD
Output voltage: 1.05V
Tolerance: ±1%
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 1.05...5.5V
Manufacturer series: NCP136
Voltage drop: 60mV
Operating temperature: -40...85°C
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.05V; 700mA; WLCSP6; SMD
Type of integrated circuit: voltage regulator
Output current: 0.7A
Number of channels: 1
Case: WLCSP6
Mounting: SMD
Output voltage: 1.05V
Tolerance: ±1%
Kind of voltage regulator: fixed; LDO; linear
Input voltage: 1.05...5.5V
Manufacturer series: NCP136
Voltage drop: 60mV
Operating temperature: -40...85°C
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| NTH4L045N065SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 197A; 94W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 39A
Pulsed drain current: 197A
Power dissipation: 94W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 39A; Idm: 197A; 94W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 39A
Pulsed drain current: 197A
Power dissipation: 94W
Case: TO247-4
Gate-source voltage: -5...18V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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| NV24M01MUW3VTBG |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; I2C; 128kx8bit; 2.5÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1Mb EEPROM
Interface: I2C
Memory organisation: 128kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Kind of package: reel; tape
Access time: 400ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; I2C; 128kx8bit; 2.5÷5.5V; 1MHz; uDFN8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1Mb EEPROM
Interface: I2C
Memory organisation: 128kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: uDFN8
Kind of interface: serial
Kind of package: reel; tape
Access time: 400ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| CAV24M01WE-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; I2C; 128kx8bit; 2.5÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1Mb EEPROM
Interface: I2C
Memory organisation: 128kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Kind of package: reel; tape
Access time: 900ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; I2C; 128kx8bit; 2.5÷5.5V; 1MHz; SOIC8
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1Mb EEPROM
Interface: I2C
Memory organisation: 128kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: SOIC8
Kind of interface: serial
Kind of package: reel; tape
Access time: 900ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
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Mindestbestellmenge: 3000 Stücke
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| CAV24M01YE-GT3 |
|
Hersteller: ONSEMI
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; I2C; 128kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1Mb EEPROM
Interface: I2C
Memory organisation: 128kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Kind of package: reel; tape
Access time: 900ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1MbEEPROM; I2C; 128kx8bit; 2.5÷5.5V; 1MHz
Type of integrated circuit: EEPROM memory
Kind of memory: EEPROM
Memory: 1Mb EEPROM
Interface: I2C
Memory organisation: 128kx8bit
Operating voltage: 2.5...5.5V
Mounting: SMD
Case: TSSOP8
Kind of interface: serial
Kind of package: reel; tape
Access time: 900ns
Operating temperature: -40...125°C
Clock frequency: 1MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| DAP222T1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SC75; Ufmax: 1.2V; Ifsm: 2A
Power dissipation: 0.15W
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 80V
Load current: 0.1A
Max. load current: 0.3A
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SC75
Capacitance: 3.5pF
Type of diode: rectifying
Reverse recovery time: 4ns
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 1.2V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 80V; 100mA; 4ns; SC75; Ufmax: 1.2V; Ifsm: 2A
Power dissipation: 0.15W
Features of semiconductor devices: ultrafast switching
Max. off-state voltage: 80V
Load current: 0.1A
Max. load current: 0.3A
Kind of package: reel; tape
Semiconductor structure: common anode; double
Case: SC75
Capacitance: 3.5pF
Type of diode: rectifying
Reverse recovery time: 4ns
Mounting: SMD
Max. forward impulse current: 2A
Max. forward voltage: 1.2V
auf Bestellung 5460 Stücke:
Lieferzeit 14-21 Tag (e)
| NTA4151PT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 0.301W; SC75
Power dissipation: 0.301W
Polarisation: unipolar
Drain current: -0.76A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±6V
Kind of package: reel; tape
Case: SC75
On-state resistance: 0.36Ω
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -0.76A; 0.301W; SC75
Power dissipation: 0.301W
Polarisation: unipolar
Drain current: -0.76A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±6V
Kind of package: reel; tape
Case: SC75
On-state resistance: 0.36Ω
Mounting: SMD
auf Bestellung 5797 Stücke:
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| NVA4001NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 238mA; Idm: 0.714A; 300mW; SC75
Pulsed drain current: 0.714A
Power dissipation: 0.3W
Polarisation: unipolar
Version: ESD
Drain current: 0.238A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
Case: SC75
On-state resistance: 3Ω
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 238mA; Idm: 0.714A; 300mW; SC75
Pulsed drain current: 0.714A
Power dissipation: 0.3W
Polarisation: unipolar
Version: ESD
Drain current: 0.238A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
Case: SC75
On-state resistance: 3Ω
Mounting: SMD
auf Bestellung 2869 Stücke:
Lieferzeit 14-21 Tag (e)
| DTA115EET1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416
Base resistor: 100kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Current gain: 80...150
Kind of package: reel; tape
Base-emitter resistor: 100kΩ
Case: SC75; SOT416
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 50V
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75,SOT416
Base resistor: 100kΩ
Power dissipation: 0.2W
Polarisation: bipolar
Kind of transistor: BRT
Type of transistor: PNP
Current gain: 80...150
Kind of package: reel; tape
Base-emitter resistor: 100kΩ
Case: SC75; SOT416
Collector current: 0.1A
Mounting: SMD
Collector-emitter voltage: 50V
auf Bestellung 5985 Stücke:
Lieferzeit 14-21 Tag (e)
| NSVDAP222T1G |
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC75; Ufmax: 1.2V; reel,tape
Features of semiconductor devices: small signal
Application: automotive industry
Max. off-state voltage: 80V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: SC75
Type of diode: switching
Reverse recovery time: 4ns
Mounting: SMD
Max. forward voltage: 1.2V
Category: SMD universal diodes
Description: Diode: switching; SMD; 80V; 0.1A; 4ns; SC75; Ufmax: 1.2V; reel,tape
Features of semiconductor devices: small signal
Application: automotive industry
Max. off-state voltage: 80V
Load current: 0.1A
Kind of package: reel; tape
Semiconductor structure: common cathode; double
Case: SC75
Type of diode: switching
Reverse recovery time: 4ns
Mounting: SMD
Max. forward voltage: 1.2V
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| SBAW56TT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SC75; Ufmax: 1.25V; Ifsm: 0.5A
Power dissipation: 0.36W
Application: automotive industry
Max. off-state voltage: 70V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: common anode; double
Leakage current: 50µA
Case: SC75
Capacitance: 2pF
Type of diode: switching
Reverse recovery time: 6ns
Mounting: SMD
Max. forward impulse current: 0.5A
Max. forward voltage: 1.25V
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SC75; Ufmax: 1.25V; Ifsm: 0.5A
Power dissipation: 0.36W
Application: automotive industry
Max. off-state voltage: 70V
Load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: common anode; double
Leakage current: 50µA
Case: SC75
Capacitance: 2pF
Type of diode: switching
Reverse recovery time: 6ns
Mounting: SMD
Max. forward impulse current: 0.5A
Max. forward voltage: 1.25V
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