PN2907ATAR onsemi
Hersteller: onsemiDescription: TRANS PNP 60V 0.8A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
auf Bestellung 70000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.099 EUR |
| 4000+ | 0.088 EUR |
| 6000+ | 0.083 EUR |
| 10000+ | 0.077 EUR |
| 14000+ | 0.074 EUR |
| 20000+ | 0.07 EUR |
| 50000+ | 0.063 EUR |
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Technische Details PN2907ATAR onsemi
Description: TRANS PNP 60V 0.8A TO-92-3, Packaging: Tape & Box (TB), Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads, Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA, Current - Collector Cutoff (Max): 20nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Frequency - Transition: 200MHz, Supplier Device Package: TO-92-3, Part Status: Active, Current - Collector (Ic) (Max): 800 mA, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 625 mW.
Weitere Produktangebote PN2907ATAR nach Preis ab 0.081 EUR bis 0.44 EUR
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PN2907ATAR | Hersteller : ON Semiconductor |
Trans GP BJT PNP 60V 0.8A 625mW 3-Pin TO-92 Fan-Fold |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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PN2907ATAR | Hersteller : onsemi / Fairchild |
Bipolar Transistors - BJT PNP Transistor General Purpose |
auf Bestellung 5269 Stücke: Lieferzeit 10-14 Tag (e) |
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PN2907ATAR | Hersteller : onsemi |
Description: TRANS PNP 60V 0.8A TO-92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
auf Bestellung 54265 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 200000 Stücke: Lieferzeit 21-28 Tag (e) |
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PN2907ATAR | Hersteller : ON Semiconductor |
Trans GP BJT PNP 60V 0.8A 625mW 3-Pin TO-92 Fan-Fold |
Produkt ist nicht verfügbar |
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PN2907ATAR | Hersteller : ON Semiconductor |
Trans GP BJT PNP 60V 0.8A 625mW 3-Pin TO-92 Fan-Fold |
Produkt ist nicht verfügbar |
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PN2907ATAR | Hersteller : ONSEMI |
Description: ONSEMI - PN2907ATAR - GENERAL PURPOSE TRANSISTOR PNP SILICON SVHC: No SVHC (10-Jun-2022) |
Produkt ist nicht verfügbar |
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| PN2907ATAR | Hersteller : ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.8A; 0.625W; TO92 Formed Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.8A Power dissipation: 0.625W Case: TO92 Formed Current gain: 100...300 Mounting: THT Kind of package: Ammo Pack Frequency: 200MHz |
Produkt ist nicht verfügbar |