NJVMJD45H11G onsemi
Hersteller: onsemiDescription: TRANS PNP 80V 8A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 90MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10756 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.02 EUR |
| 75+ | 0.89 EUR |
| 150+ | 0.8 EUR |
| 525+ | 0.66 EUR |
| 1050+ | 0.6 EUR |
| 2025+ | 0.55 EUR |
| 5025+ | 0.5 EUR |
| 10050+ | 0.46 EUR |
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Technische Details NJVMJD45H11G onsemi
Description: TRANS PNP 80V 8A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A, Current - Collector Cutoff (Max): 1µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V, Frequency - Transition: 90MHz, Supplier Device Package: DPAK, Part Status: Active, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 1.75 W, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NJVMJD45H11G nach Preis ab 0.81 EUR bis 2.06 EUR
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NJVMJD45H11G | Hersteller : onsemi |
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| NJVMJD45H11G | Hersteller : ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 80V; 8A; 20W; DPAK; automotive industry Mounting: SMD Collector current: 8A Kind of package: tube Current gain: 60 Type of transistor: PNP Case: DPAK Collector-emitter voltage: 80V Polarisation: bipolar Application: automotive industry Power dissipation: 20W |
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