| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| NCV4274AST33T3G | ONSEMI |
 Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; SOT223; SMD Type of integrated circuit: voltage regulator Number of channels: 1 Mounting: SMD Case: SOT223 Kind of package: reel; tape Output current: 0.4A Output voltage: 3.3V Application: automotive industry Kind of voltage regulator: fixed; LDO; linear |
Produkt ist nicht verfügbar |
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| NCV4274ADT50RKG | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Output voltage: 5V Output current: 0.4A Case: DPAK Mounting: SMD Kind of package: reel; tape Number of channels: 1 Application: automotive industry |
Produkt ist nicht verfügbar |
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| BC858AWT1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 30V Collector current: 0.1A Power dissipation: 0.15W Case: SC70; SOT323 Current gain: 125...250 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
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| LMV393MUTAG | ONSEMI |
Category: SMD comparators Description: IC: comparator; Cmp: 2; 1.5us; 2.7÷5V; SMT; uDFN8; reel,tape; Iio: 1nA Type of integrated circuit: comparator Number of comparators: 2 Mounting: SMT Case: uDFN8 Operating temperature: -40...85°C Input offset voltage: 9mV Kind of package: reel; tape Input offset current: 1nA Input bias current: 1nA Delay time: 1.5µs Operating voltage: 2.7...5V |
Produkt ist nicht verfügbar |
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| NST489AMT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 2A; 0.535W; TSOP6 Mounting: SMD Case: TSOP6 Type of transistor: NPN Kind of package: reel; tape Power dissipation: 0.535W Collector current: 2A Collector-emitter voltage: 30V Current gain: 300...900 Frequency: 200MHz Polarisation: bipolar |
Produkt ist nicht verfügbar |
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| NCP1126BP65G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; 8.5÷35VDC Case: DIP7 On-state resistance: 5.4Ω Mounting: SMD Number of channels: 1 Operating voltage: 8.5...35V DC Frequency: 61...71kHz Kind of integrated circuit: AC/DC switcher; PWM controller Type of integrated circuit: PMIC Operating temperature: -40...125°C |
Produkt ist nicht verfügbar |
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| NCP1246AD065R2G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback Type of integrated circuit: PMIC Kind of integrated circuit: AC/DC switcher; PWM controller Output current: 500...800mA Frequency: 58...72kHz Mounting: SMD Case: SO7 Topology: flyback Number of channels: 1 Operating temperature: -40...125°C Operating voltage: 8.9...26.5V DC |
Produkt ist nicht verfügbar |
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GBU4M | ONSEMI |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |
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| MCH6001-TL-E | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; RF; 8V; 150mA; 600mW; MCPH6 Quantity in set/package: 3000pcs. Polarisation: bipolar Mounting: SMD Type of transistor: NPN x2 Kind of package: reel; tape Kind of transistor: RF Collector current: 0.15A Power dissipation: 0.6W Collector-emitter voltage: 8V Current gain: 60...150 Frequency: 13...16GHz Case: MCPH6 |
Produkt ist nicht verfügbar |
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NTS4001NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 0.2A; 0.33W; SC70,SOT323 Case: SC70; SOT323 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.33W Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Drain current: 0.2A On-state resistance: 1.5Ω Gate-source voltage: ±20V Drain-source voltage: 30V |
auf Bestellung 3209 Stücke: Lieferzeit 14-21 Tag (e) |
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1SS400T1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523F; Ufmax: 1.2V; 200mW Type of diode: switching Case: SOD523F Mounting: SMD Max. off-state voltage: 100V Load current: 0.2A Semiconductor structure: single diode Capacitance: 3pF Kind of package: reel; tape Power dissipation: 0.2W Features of semiconductor devices: fast switching Reverse recovery time: 4ns Max. forward voltage: 1.2V |
auf Bestellung 4509 Stücke: Lieferzeit 14-21 Tag (e) |
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| FNB43060T2 | ONSEMI |
Category: Motor and PWM drivers Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAB-C26 Type of integrated circuit: driver Topology: IGBT three-phase bridge; NTC thermistor Kind of integrated circuit: 3-phase motor controller; IPM Technology: Motion SPM® 45 Case: SPMAB-C26 Output current: 30A Number of channels: 6 Mounting: THT Operating temperature: -40...125°C Operating voltage: 13.5...16.5/0...400V DC Frequency: 20kHz Power dissipation: 59W Collector-emitter voltage: 600V |
Produkt ist nicht verfügbar |
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| MUR1100EG | ONSEMI |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; bulk; DO41; 100ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: bulk Case: DO41 Reverse recovery time: 100ns |
Produkt ist nicht verfügbar |
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| FDB075N15A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 130A; Idm: 522A; 333W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 130A Power dissipation: 333W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 77nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 522A |
Produkt ist nicht verfügbar |
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| FDB075N15A-F085 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 333W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 110A Power dissipation: 333W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 20mΩ Mounting: SMD Gate charge: 95nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| SS39 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 90V; 3A; reel,tape; 2.27W Type of diode: Schottky rectifying Case: SMC Mounting: SMD Max. off-state voltage: 90V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.85V Max. forward impulse current: 100A Kind of package: reel; tape Power dissipation: 2.27W |
auf Bestellung 2808 Stücke: Lieferzeit 14-21 Tag (e) |
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| MOC3021TVM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT Number of channels: 1 Conform to the norm: VDE Kind of package: tube Output voltage: 400V Manufacturer series: MOC302XM |
Produkt ist nicht verfügbar |
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| MOC3021SVM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: SMD Number of channels: 1 Conform to the norm: VDE Kind of package: tube Output voltage: 400V Manufacturer series: MOC302XM |
Produkt ist nicht verfügbar |
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| MOC3021VM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: DIP6 Max. off-state voltage: 3V Trigger current: 15mA Mounting: THT Number of channels: 1 Conform to the norm: VDE Kind of package: tube Output voltage: 400V Manufacturer series: MOC302XM |
Produkt ist nicht verfügbar |
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MC14070BDG | ONSEMI |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Family: HEF4000B Technology: CMOS Type of integrated circuit: digital Mounting: SMD Number of channels: quad; 4 Kind of package: tube Kind of gate: XOR Operating temperature: -55...125°C Delay time: 150ns Number of inputs: 2 Supply voltage: 3...18V DC Case: SO14 |
auf Bestellung 106 Stücke: Lieferzeit 14-21 Tag (e) |
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MC14070BDR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 3...18V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 150ns Family: HEF4000B |
Produkt ist nicht verfügbar |
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MC14017BDR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; decade counter; Ch: 1; IN: 3; CMOS; SMD; SOIC16; 3÷18VDC Technology: CMOS Kind of integrated circuit: decade counter Type of integrated circuit: digital Mounting: SMD Kind of package: reel; tape Case: SOIC16 Operating temperature: -55...125°C Number of channels: 1 Number of inputs: 3 Supply voltage: 3...18V DC |
Produkt ist nicht verfügbar |
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FQD16N25CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 10.1A; 160W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 10.1A Power dissipation: 160W Case: DPAK Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 53.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| FGY120T65SPD-F085 | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3 Mounting: THT Type of transistor: IGBT Kind of package: tube Gate charge: 162nC Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 378A Power dissipation: 441W Collector-emitter voltage: 650V Case: TO247-3 |
Produkt ist nicht verfügbar |
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| AFGY120T65SPD | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 120A; 357W; TO247-3 Mounting: THT Type of transistor: IGBT Kind of package: tube Gate charge: 125nC Gate-emitter voltage: ±20V Collector current: 120A Pulsed collector current: 360A Power dissipation: 357W Collector-emitter voltage: 650V Case: TO247-3 |
Produkt ist nicht verfügbar |
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FDMA1023PZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.7A; 1.5W; MicroFET Type of transistor: P-MOSFET x2 Technology: PowerTrench® Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.7A Gate charge: 12nC On-state resistance: 0.195Ω Power dissipation: 1.5W Gate-source voltage: ±8V Kind of channel: enhancement Case: MicroFET |
Produkt ist nicht verfügbar |
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| 1N5927BG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 3W; 12V; bulk; CASE59; single diode; 1uA; 1N59xxB Type of diode: Zener Power dissipation: 3W Zener voltage: 12V Kind of package: bulk Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: 1N59xxB |
Produkt ist nicht verfügbar |
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| 1N5919BRLG | ONSEMI |
Category: THT Zener diodes Description: Diode: Zener; 3W; 5.6V; reel,tape; CASE59; single diode; 5uA Type of diode: Zener Power dissipation: 3W Zener voltage: 5.6V Kind of package: reel; tape Case: CASE59 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Manufacturer series: 1N59xxB Leakage current: 5µA |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| MAGNCV8402ASTT1G | ONSEMI |
Category: Unclassified Description: MAGNCV8402ASTT1G |
auf Bestellung 111000 Stücke: Lieferzeit 14-21 Tag (e) |
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ESD5Z12T1G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 240W; 14.1V; 9.6A; unidirectional; SOD523; reel,tape Type of diode: TVS Max. off-state voltage: 12V Breakdown voltage: 14.1V Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 9.6A Leakage current: 10nA Version: ESD Peak pulse power dissipation: 240W |
auf Bestellung 4025 Stücke: Lieferzeit 14-21 Tag (e) |
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| SZESD5Z12T1G | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 14.1V; unidirectional; SOD523; reel,tape Type of diode: TVS Max. off-state voltage: 12V Breakdown voltage: 14.1V Semiconductor structure: unidirectional Case: SOD523 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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| MARSZESD5Z12T1G | ONSEMI |
Category: Unclassified Description: MARSZESD5Z12T1G |
auf Bestellung 27000 Stücke: Lieferzeit 14-21 Tag (e) |
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| LM201AVDR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; SO8; ±5÷20VDC; reel,tape; IB: 75nA Mounting: SMT Operating temperature: -40...105°C Case: SO8 Type of integrated circuit: operational amplifier Kind of package: reel; tape Number of channels: single Input offset current: 10nA Input bias current: 75nA Input offset voltage: 2mV Slew rate: 10V/μs Voltage supply range: ± 5...20V DC |
Produkt ist nicht verfügbar |
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| NVMTS0D4N04CLTXG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 553.8A; Idm: 900A; 122W; DFNW8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 553.8A Pulsed drain current: 900A Power dissipation: 122W Case: DFNW8 Gate-source voltage: ±20V On-state resistance: 0.4mΩ Mounting: SMD Gate charge: 163nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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| NVTFS004N04CTAG | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 77A; Idm: 338A; 18W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 77A Pulsed drain current: 338A Power dissipation: 18W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 4.9mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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MJE182G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 3A; 12.5W; TO225 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 3A Power dissipation: 12.5W Case: TO225 Current gain: 50...250 Mounting: THT Frequency: 50MHz Kind of package: bulk |
Produkt ist nicht verfügbar |
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NC7SP14P5X | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC70-5; 0.9÷3.6VDC; -40÷85°C Mounting: SMD Case: SC70-5 Kind of gate: NOT Kind of input: with Schmitt trigger Operating temperature: -40...85°C Quiescent current: 0.9µA Number of channels: single; 1 Supply voltage: 0.9...3.6V DC Number of inputs: 1 Type of integrated circuit: digital Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| NC7WP14P6X | ONSEMI |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 2; IN: 1; CMOS; SMD; SC70-6; 0.9÷3.6VDC; -40÷85°C Mounting: SMD Case: SC70-6 Kind of gate: NOT Kind of input: with Schmitt trigger Operating temperature: -40...85°C Quiescent current: 0.9µA Number of channels: dual; 2 Supply voltage: 0.9...3.6V DC Number of inputs: 1 Type of integrated circuit: digital Kind of package: reel; tape Technology: CMOS |
Produkt ist nicht verfügbar |
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MC14504BDTG | ONSEMI |
Category: Level translators Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; TSSOP16 Type of integrated circuit: digital Kind of integrated circuit: level shifter Number of channels: 6 Technology: CMOS Mounting: SMD Case: TSSOP16 |
Produkt ist nicht verfügbar |
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MC14538BDR2G | ONSEMI |
Category: Multivibrators Description: IC: digital; monostable,multivibrator,resettable; 3÷18VDC; SMD Type of integrated circuit: digital Kind of integrated circuit: monostable; multivibrator; resettable Mounting: SMD Case: SO16 Operating temperature: -40...85°C Supply voltage: 3...18V DC |
Produkt ist nicht verfügbar |
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MJE5852G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 400V; 8A; 80W; TO220AB Polarisation: bipolar Mounting: THT Type of transistor: PNP Case: TO220AB Power dissipation: 80W Collector current: 8A Current gain: 15 Collector-emitter voltage: 400V Kind of package: tube |
auf Bestellung 89 Stücke: Lieferzeit 14-21 Tag (e) |
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| MOC3083SVM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3083M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac; zero voltage crossing driver Case: SMT6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Conform to the norm: VDE Kind of package: tube Output voltage: 800V Manufacturer series: MOC3083M |
Produkt ist nicht verfügbar |
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| MOC3083VM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3083M; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac; zero voltage crossing driver Case: DIP6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: THT Number of channels: 1 Conform to the norm: VDE Kind of package: tube Output voltage: 800V Manufacturer series: MOC3083M |
Produkt ist nicht verfügbar |
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| NVMFWS2D3N04XMT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 121A; Idm: 688A; 63W; DFNW5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 121A Pulsed drain current: 688A Power dissipation: 63W Case: DFNW5 Gate-source voltage: ±20V On-state resistance: 2.35mΩ Mounting: SMD Gate charge: 22.2nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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74AC139MTCX | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; decoder,demultiplexer; Ch: 2; SMD; TSSOP14; AC; 2÷6VDC Type of integrated circuit: digital Number of channels: 2 Mounting: SMD Case: TSSOP14 Kind of package: reel; tape Operating temperature: -40...85°C Quiescent current: 40µA Supply voltage: 2...6V DC Manufacturer series: AC Kind of integrated circuit: decoder; demultiplexer |
auf Bestellung 1819 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSVJ6904DSB6T1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET x2; unipolar; 25V; 20mA; 0.7W; CPH6; Igt: 10mA Type of transistor: N-JFET x2 Polarisation: unipolar Drain-source voltage: 25V Drain current: 20mA Power dissipation: 0.7W Case: CPH6 Gate-source voltage: -25V Mounting: SMD Kind of package: reel; tape Semiconductor structure: common source Gate current: 10mA |
Produkt ist nicht verfügbar |
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| NCS2001SN2T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.4MHz; SOT23-5; 0.9÷7VDC; reel,tape Type of integrated circuit: operational amplifier Case: SOT23-5 Mounting: SMT Operating temperature: -40...105°C Kind of package: reel; tape Input bias current: 10pA Input offset voltage: 7.5mV Slew rate: 1.6V/μs Voltage supply range: 0.9...7V DC Bandwidth: 1.4MHz Number of channels: single |
Produkt ist nicht verfügbar |
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| NCS2001SN1T1G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.4MHz; SOT23-5; 0.9÷7VDC; reel,tape Type of integrated circuit: operational amplifier Case: SOT23-5 Mounting: SMT Operating temperature: -40...105°C Kind of package: reel; tape Input bias current: 10pA Input offset voltage: 7.5mV Slew rate: 1.6V/μs Voltage supply range: 0.9...7V DC Bandwidth: 1.4MHz Number of channels: single |
Produkt ist nicht verfügbar |
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| NCS2001SQ2T2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1.4MHz; SC70-5; 0.9÷7VDC; reel,tape Type of integrated circuit: operational amplifier Case: SC70-5 Mounting: SMT Operating temperature: -40...105°C Kind of package: reel; tape Input bias current: 10pA Input offset voltage: 7.5mV Slew rate: 1.6V/μs Voltage supply range: 0.9...7V DC Bandwidth: 1.4MHz Number of channels: single |
Produkt ist nicht verfügbar |
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| NCS20034DR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 7MHz; SO14; 1.7÷5.5VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 7MHz Mounting: SMT Case: SO14 Slew rate: 8V/μs Operating temperature: -40...125°C Input offset voltage: 4mV Voltage supply range: 1.7...5.5V DC Kind of package: reel; tape Input bias current: 1pA Input offset current: 1pA Number of channels: quad |
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| LM2595DSADJR4G | ONSEMI |
Category: Voltage regulators - DC/DC circuits Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter Case: D2PAK-5 Mounting: SMD Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MJB44H11G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK Polarisation: bipolar Case: D2PAK Type of transistor: NPN Mounting: SMD Power dissipation: 50W Collector current: 10A Current gain: 60 Collector-emitter voltage: 80V Kind of package: tube |
Produkt ist nicht verfügbar |
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| MJB44H11T4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK Polarisation: bipolar Case: D2PAK Type of transistor: NPN Mounting: SMD Power dissipation: 50W Collector current: 10A Current gain: 60 Collector-emitter voltage: 80V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NJW44H11G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P Polarisation: bipolar Case: TO3P Type of transistor: NPN Mounting: THT Power dissipation: 120W Collector current: 10A Current gain: 100...320 Collector-emitter voltage: 80V Frequency: 85MHz Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NJVMJB44H11T4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry Polarisation: bipolar Case: D2PAK Type of transistor: NPN Mounting: SMD Power dissipation: 50W Collector current: 10A Current gain: 60 Collector-emitter voltage: 80V Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
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| MC33067DWR2G | ONSEMI |
Category: Unclassified Description: MC33067DWR2G |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
|
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| NCV8535MN500R2G | ONSEMI |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DFN10; SMD; Ch: 1 Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Kind of package: reel; tape Output current: 0.5A Number of channels: 1 Output voltage: 5V Application: automotive industry Type of integrated circuit: voltage regulator Case: DFN10 |
Produkt ist nicht verfügbar |
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| FMB2222A | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 45V; 0.5A; 0.7W; TSOT23-6 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.7W Case: TSOT23-6 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 300MHz |
Produkt ist nicht verfügbar |
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| NVMFS016N10MCLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Pulsed drain current: 243A Power dissipation: 32W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVMFWS016N10MCLT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Pulsed drain current: 243A Power dissipation: 32W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NCV4274AST33T3G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; SOT223; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Output current: 0.4A
Output voltage: 3.3V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.4A; SOT223; SMD
Type of integrated circuit: voltage regulator
Number of channels: 1
Mounting: SMD
Case: SOT223
Kind of package: reel; tape
Output current: 0.4A
Output voltage: 3.3V
Application: automotive industry
Kind of voltage regulator: fixed; LDO; linear
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV4274ADT50RKG |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.4A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.4A; DPAK; SMD; Ch: 1
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 5V
Output current: 0.4A
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Number of channels: 1
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC858AWT1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.15W; SC70,SOT323
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC70; SOT323
Current gain: 125...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| LMV393MUTAG |
|
Hersteller: ONSEMI
Category: SMD comparators
Description: IC: comparator; Cmp: 2; 1.5us; 2.7÷5V; SMT; uDFN8; reel,tape; Iio: 1nA
Type of integrated circuit: comparator
Number of comparators: 2
Mounting: SMT
Case: uDFN8
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Delay time: 1.5µs
Operating voltage: 2.7...5V
Category: SMD comparators
Description: IC: comparator; Cmp: 2; 1.5us; 2.7÷5V; SMT; uDFN8; reel,tape; Iio: 1nA
Type of integrated circuit: comparator
Number of comparators: 2
Mounting: SMT
Case: uDFN8
Operating temperature: -40...85°C
Input offset voltage: 9mV
Kind of package: reel; tape
Input offset current: 1nA
Input bias current: 1nA
Delay time: 1.5µs
Operating voltage: 2.7...5V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NST489AMT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 2A; 0.535W; TSOP6
Mounting: SMD
Case: TSOP6
Type of transistor: NPN
Kind of package: reel; tape
Power dissipation: 0.535W
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 300...900
Frequency: 200MHz
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 2A; 0.535W; TSOP6
Mounting: SMD
Case: TSOP6
Type of transistor: NPN
Kind of package: reel; tape
Power dissipation: 0.535W
Collector current: 2A
Collector-emitter voltage: 30V
Current gain: 300...900
Frequency: 200MHz
Polarisation: bipolar
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NCP1126BP65G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; 8.5÷35VDC
Case: DIP7
On-state resistance: 5.4Ω
Mounting: SMD
Number of channels: 1
Operating voltage: 8.5...35V DC
Frequency: 61...71kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; DIP7; 8.5÷35VDC
Case: DIP7
On-state resistance: 5.4Ω
Mounting: SMD
Number of channels: 1
Operating voltage: 8.5...35V DC
Frequency: 61...71kHz
Kind of integrated circuit: AC/DC switcher; PWM controller
Type of integrated circuit: PMIC
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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| NCP1246AD065R2G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; AC/DC switcher,PWM controller; SO7; flyback
Type of integrated circuit: PMIC
Kind of integrated circuit: AC/DC switcher; PWM controller
Output current: 500...800mA
Frequency: 58...72kHz
Mounting: SMD
Case: SO7
Topology: flyback
Number of channels: 1
Operating temperature: -40...125°C
Operating voltage: 8.9...26.5V DC
Produkt ist nicht verfügbar
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| GBU4M |
|
Hersteller: ONSEMI
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MCH6001-TL-E |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; RF; 8V; 150mA; 600mW; MCPH6
Quantity in set/package: 3000pcs.
Polarisation: bipolar
Mounting: SMD
Type of transistor: NPN x2
Kind of package: reel; tape
Kind of transistor: RF
Collector current: 0.15A
Power dissipation: 0.6W
Collector-emitter voltage: 8V
Current gain: 60...150
Frequency: 13...16GHz
Case: MCPH6
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; RF; 8V; 150mA; 600mW; MCPH6
Quantity in set/package: 3000pcs.
Polarisation: bipolar
Mounting: SMD
Type of transistor: NPN x2
Kind of package: reel; tape
Kind of transistor: RF
Collector current: 0.15A
Power dissipation: 0.6W
Collector-emitter voltage: 8V
Current gain: 60...150
Frequency: 13...16GHz
Case: MCPH6
Produkt ist nicht verfügbar
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| NTS4001NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.2A; 0.33W; SC70,SOT323
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.33W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.2A
On-state resistance: 1.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 30V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.2A; 0.33W; SC70,SOT323
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.33W
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 0.2A
On-state resistance: 1.5Ω
Gate-source voltage: ±20V
Drain-source voltage: 30V
auf Bestellung 3209 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 385+ | 0.19 EUR |
| 472+ | 0.15 EUR |
| 550+ | 0.13 EUR |
| 815+ | 0.088 EUR |
| 935+ | 0.077 EUR |
| 1067+ | 0.067 EUR |
| 1454+ | 0.049 EUR |
| 1539+ | 0.046 EUR |
| 1SS400T1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523F; Ufmax: 1.2V; 200mW
Type of diode: switching
Case: SOD523F
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 3pF
Kind of package: reel; tape
Power dissipation: 0.2W
Features of semiconductor devices: fast switching
Reverse recovery time: 4ns
Max. forward voltage: 1.2V
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOD523F; Ufmax: 1.2V; 200mW
Type of diode: switching
Case: SOD523F
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 3pF
Kind of package: reel; tape
Power dissipation: 0.2W
Features of semiconductor devices: fast switching
Reverse recovery time: 4ns
Max. forward voltage: 1.2V
auf Bestellung 4509 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 556+ | 0.13 EUR |
| 658+ | 0.11 EUR |
| 872+ | 0.082 EUR |
| 993+ | 0.072 EUR |
| 2025+ | 0.035 EUR |
| 2137+ | 0.033 EUR |
| FNB43060T2 |
|
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAB-C26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: Motion SPM® 45
Case: SPMAB-C26
Output current: 30A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Power dissipation: 59W
Collector-emitter voltage: 600V
Category: Motor and PWM drivers
Description: IC: driver; IGBT three-phase bridge,NTC thermistor; SPMAB-C26
Type of integrated circuit: driver
Topology: IGBT three-phase bridge; NTC thermistor
Kind of integrated circuit: 3-phase motor controller; IPM
Technology: Motion SPM® 45
Case: SPMAB-C26
Output current: 30A
Number of channels: 6
Mounting: THT
Operating temperature: -40...125°C
Operating voltage: 13.5...16.5/0...400V DC
Frequency: 20kHz
Power dissipation: 59W
Collector-emitter voltage: 600V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MUR1100EG | |
|
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; bulk; DO41; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Case: DO41
Reverse recovery time: 100ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; bulk; DO41; 100ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: bulk
Case: DO41
Reverse recovery time: 100ns
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| FDB075N15A |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; Idm: 522A; 333W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 522A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 130A; Idm: 522A; 333W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 130A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 522A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDB075N15A-F085 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 333W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 110A; 333W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 110A
Power dissipation: 333W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SS39 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 90V; 3A; reel,tape; 2.27W
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 90V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.27W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 90V; 3A; reel,tape; 2.27W
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 90V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Max. forward impulse current: 100A
Kind of package: reel; tape
Power dissipation: 2.27W
auf Bestellung 2808 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 76+ | 0.94 EUR |
| 84+ | 0.85 EUR |
| 90+ | 0.8 EUR |
| 100+ | 0.72 EUR |
| 128+ | 0.56 EUR |
| 135+ | 0.53 EUR |
| 250+ | 0.52 EUR |
| 500+ | 0.51 EUR |
| MOC3021TVM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3021SVM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; SMT6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3021VM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 400V; triac; DIP6; Ch: 1; MOC302XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: DIP6
Max. off-state voltage: 3V
Trigger current: 15mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 400V
Manufacturer series: MOC302XM
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| MC14070BDG |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Family: HEF4000B
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Number of channels: quad; 4
Kind of package: tube
Kind of gate: XOR
Operating temperature: -55...125°C
Delay time: 150ns
Number of inputs: 2
Supply voltage: 3...18V DC
Case: SO14
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Family: HEF4000B
Technology: CMOS
Type of integrated circuit: digital
Mounting: SMD
Number of channels: quad; 4
Kind of package: tube
Kind of gate: XOR
Operating temperature: -55...125°C
Delay time: 150ns
Number of inputs: 2
Supply voltage: 3...18V DC
Case: SO14
auf Bestellung 106 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 106+ | 0.67 EUR |
| MC14070BDR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 150ns
Family: HEF4000B
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷18VDC; -55÷125°C
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 3...18V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 150ns
Family: HEF4000B
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MC14017BDR2G |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; decade counter; Ch: 1; IN: 3; CMOS; SMD; SOIC16; 3÷18VDC
Technology: CMOS
Kind of integrated circuit: decade counter
Type of integrated circuit: digital
Mounting: SMD
Kind of package: reel; tape
Case: SOIC16
Operating temperature: -55...125°C
Number of channels: 1
Number of inputs: 3
Supply voltage: 3...18V DC
Category: Counters/dividers
Description: IC: digital; decade counter; Ch: 1; IN: 3; CMOS; SMD; SOIC16; 3÷18VDC
Technology: CMOS
Kind of integrated circuit: decade counter
Type of integrated circuit: digital
Mounting: SMD
Kind of package: reel; tape
Case: SOIC16
Operating temperature: -55...125°C
Number of channels: 1
Number of inputs: 3
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQD16N25CTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.1A; 160W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10.1A
Power dissipation: 160W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 53.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.1A; 160W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 10.1A
Power dissipation: 160W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 53.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGY120T65SPD-F085 |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3
Mounting: THT
Type of transistor: IGBT
Kind of package: tube
Gate charge: 162nC
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 378A
Power dissipation: 441W
Collector-emitter voltage: 650V
Case: TO247-3
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 441W; TO247-3
Mounting: THT
Type of transistor: IGBT
Kind of package: tube
Gate charge: 162nC
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 378A
Power dissipation: 441W
Collector-emitter voltage: 650V
Case: TO247-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AFGY120T65SPD |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 357W; TO247-3
Mounting: THT
Type of transistor: IGBT
Kind of package: tube
Gate charge: 125nC
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Power dissipation: 357W
Collector-emitter voltage: 650V
Case: TO247-3
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 120A; 357W; TO247-3
Mounting: THT
Type of transistor: IGBT
Kind of package: tube
Gate charge: 125nC
Gate-emitter voltage: ±20V
Collector current: 120A
Pulsed collector current: 360A
Power dissipation: 357W
Collector-emitter voltage: 650V
Case: TO247-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMA1023PZ |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.7A; 1.5W; MicroFET
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Gate charge: 12nC
On-state resistance: 0.195Ω
Power dissipation: 1.5W
Gate-source voltage: ±8V
Kind of channel: enhancement
Case: MicroFET
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -3.7A; 1.5W; MicroFET
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Gate charge: 12nC
On-state resistance: 0.195Ω
Power dissipation: 1.5W
Gate-source voltage: ±8V
Kind of channel: enhancement
Case: MicroFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5927BG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 12V; bulk; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Kind of package: bulk
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
Category: THT Zener diodes
Description: Diode: Zener; 3W; 12V; bulk; CASE59; single diode; 1uA; 1N59xxB
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 12V
Kind of package: bulk
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: 1N59xxB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5919BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 3W; 5.6V; reel,tape; CASE59; single diode; 5uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N59xxB
Leakage current: 5µA
Category: THT Zener diodes
Description: Diode: Zener; 3W; 5.6V; reel,tape; CASE59; single diode; 5uA
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.6V
Kind of package: reel; tape
Case: CASE59
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Manufacturer series: 1N59xxB
Leakage current: 5µA
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.15 EUR |
| MAGNCV8402ASTT1G |
auf Bestellung 111000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.36 EUR |
| ESD5Z12T1G | |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 240W; 14.1V; 9.6A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 9.6A
Leakage current: 10nA
Version: ESD
Peak pulse power dissipation: 240W
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 240W; 14.1V; 9.6A; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 9.6A
Leakage current: 10nA
Version: ESD
Peak pulse power dissipation: 240W
auf Bestellung 4025 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 556+ | 0.13 EUR |
| 676+ | 0.11 EUR |
| 794+ | 0.09 EUR |
| 1296+ | 0.055 EUR |
| 1578+ | 0.045 EUR |
| 2213+ | 0.032 EUR |
| 2618+ | 0.027 EUR |
| 2763+ | 0.026 EUR |
| SZESD5Z12T1G |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 14.1V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 14.1V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Max. off-state voltage: 12V
Breakdown voltage: 14.1V
Semiconductor structure: unidirectional
Case: SOD523
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MARSZESD5Z12T1G |
auf Bestellung 27000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.038 EUR |
| LM201AVDR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; SO8; ±5÷20VDC; reel,tape; IB: 75nA
Mounting: SMT
Operating temperature: -40...105°C
Case: SO8
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Number of channels: single
Input offset current: 10nA
Input bias current: 75nA
Input offset voltage: 2mV
Slew rate: 10V/μs
Voltage supply range: ± 5...20V DC
Category: SMD operational amplifiers
Description: IC: operational amplifier; SO8; ±5÷20VDC; reel,tape; IB: 75nA
Mounting: SMT
Operating temperature: -40...105°C
Case: SO8
Type of integrated circuit: operational amplifier
Kind of package: reel; tape
Number of channels: single
Input offset current: 10nA
Input bias current: 75nA
Input offset voltage: 2mV
Slew rate: 10V/μs
Voltage supply range: ± 5...20V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMTS0D4N04CLTXG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 553.8A; Idm: 900A; 122W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 553.8A
Pulsed drain current: 900A
Power dissipation: 122W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 0.4mΩ
Mounting: SMD
Gate charge: 163nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 553.8A; Idm: 900A; 122W; DFNW8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 553.8A
Pulsed drain current: 900A
Power dissipation: 122W
Case: DFNW8
Gate-source voltage: ±20V
On-state resistance: 0.4mΩ
Mounting: SMD
Gate charge: 163nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTFS004N04CTAG |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; Idm: 338A; 18W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Pulsed drain current: 338A
Power dissipation: 18W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 77A; Idm: 338A; 18W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 77A
Pulsed drain current: 338A
Power dissipation: 18W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 4.9mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJE182G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Power dissipation: 12.5W
Case: TO225
Current gain: 50...250
Mounting: THT
Frequency: 50MHz
Kind of package: bulk
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 3A; 12.5W; TO225
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 3A
Power dissipation: 12.5W
Case: TO225
Current gain: 50...250
Mounting: THT
Frequency: 50MHz
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NC7SP14P5X |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC70-5; 0.9÷3.6VDC; -40÷85°C
Mounting: SMD
Case: SC70-5
Kind of gate: NOT
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Quiescent current: 0.9µA
Number of channels: single; 1
Supply voltage: 0.9...3.6V DC
Number of inputs: 1
Type of integrated circuit: digital
Kind of package: reel; tape
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC70-5; 0.9÷3.6VDC; -40÷85°C
Mounting: SMD
Case: SC70-5
Kind of gate: NOT
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Quiescent current: 0.9µA
Number of channels: single; 1
Supply voltage: 0.9...3.6V DC
Number of inputs: 1
Type of integrated circuit: digital
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NC7WP14P6X |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; IN: 1; CMOS; SMD; SC70-6; 0.9÷3.6VDC; -40÷85°C
Mounting: SMD
Case: SC70-6
Kind of gate: NOT
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Quiescent current: 0.9µA
Number of channels: dual; 2
Supply voltage: 0.9...3.6V DC
Number of inputs: 1
Type of integrated circuit: digital
Kind of package: reel; tape
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 2; IN: 1; CMOS; SMD; SC70-6; 0.9÷3.6VDC; -40÷85°C
Mounting: SMD
Case: SC70-6
Kind of gate: NOT
Kind of input: with Schmitt trigger
Operating temperature: -40...85°C
Quiescent current: 0.9µA
Number of channels: dual; 2
Supply voltage: 0.9...3.6V DC
Number of inputs: 1
Type of integrated circuit: digital
Kind of package: reel; tape
Technology: CMOS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14504BDTG |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: level shifter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Category: Level translators
Description: IC: digital; level shifter; Ch: 6; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: level shifter
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14538BDR2G |
|
Hersteller: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator,resettable; 3÷18VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator; resettable
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Category: Multivibrators
Description: IC: digital; monostable,multivibrator,resettable; 3÷18VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: monostable; multivibrator; resettable
Mounting: SMD
Case: SO16
Operating temperature: -40...85°C
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MJE5852G |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 400V; 8A; 80W; TO220AB
Polarisation: bipolar
Mounting: THT
Type of transistor: PNP
Case: TO220AB
Power dissipation: 80W
Collector current: 8A
Current gain: 15
Collector-emitter voltage: 400V
Kind of package: tube
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 400V; 8A; 80W; TO220AB
Polarisation: bipolar
Mounting: THT
Type of transistor: PNP
Case: TO220AB
Power dissipation: 80W
Collector current: 8A
Current gain: 15
Collector-emitter voltage: 400V
Kind of package: tube
auf Bestellung 89 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 3.83 EUR |
| 24+ | 3.09 EUR |
| 25+ | 2.92 EUR |
| MOC3083SVM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3083M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 800V
Manufacturer series: MOC3083M
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; SMT6; Ch: 1; MOC3083M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 800V
Manufacturer series: MOC3083M
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3083VM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3083M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 800V
Manufacturer series: MOC3083M
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 800V; DIP6; Ch: 1; MOC3083M; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac; zero voltage crossing driver
Case: DIP6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: THT
Number of channels: 1
Conform to the norm: VDE
Kind of package: tube
Output voltage: 800V
Manufacturer series: MOC3083M
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFWS2D3N04XMT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 121A; Idm: 688A; 63W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 121A
Pulsed drain current: 688A
Power dissipation: 63W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 2.35mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 121A; Idm: 688A; 63W; DFNW5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 121A
Pulsed drain current: 688A
Power dissipation: 63W
Case: DFNW5
Gate-source voltage: ±20V
On-state resistance: 2.35mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74AC139MTCX |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; SMD; TSSOP14; AC; 2÷6VDC
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Manufacturer series: AC
Kind of integrated circuit: decoder; demultiplexer
Category: Decoders, multiplexers, switches
Description: IC: digital; decoder,demultiplexer; Ch: 2; SMD; TSSOP14; AC; 2÷6VDC
Type of integrated circuit: digital
Number of channels: 2
Mounting: SMD
Case: TSSOP14
Kind of package: reel; tape
Operating temperature: -40...85°C
Quiescent current: 40µA
Supply voltage: 2...6V DC
Manufacturer series: AC
Kind of integrated circuit: decoder; demultiplexer
auf Bestellung 1819 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 1.23 EUR |
| 119+ | 0.6 EUR |
| 140+ | 0.51 EUR |
| 202+ | 0.35 EUR |
| 213+ | 0.34 EUR |
| 1000+ | 0.32 EUR |
| NSVJ6904DSB6T1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET x2; unipolar; 25V; 20mA; 0.7W; CPH6; Igt: 10mA
Type of transistor: N-JFET x2
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 20mA
Power dissipation: 0.7W
Case: CPH6
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common source
Gate current: 10mA
Category: SMD N channel transistors
Description: Transistor: N-JFET x2; unipolar; 25V; 20mA; 0.7W; CPH6; Igt: 10mA
Type of transistor: N-JFET x2
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 20mA
Power dissipation: 0.7W
Case: CPH6
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common source
Gate current: 10mA
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| NCS2001SN2T1G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; SOT23-5; 0.9÷7VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: SOT23-5
Mounting: SMT
Operating temperature: -40...105°C
Kind of package: reel; tape
Input bias current: 10pA
Input offset voltage: 7.5mV
Slew rate: 1.6V/μs
Voltage supply range: 0.9...7V DC
Bandwidth: 1.4MHz
Number of channels: single
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; SOT23-5; 0.9÷7VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: SOT23-5
Mounting: SMT
Operating temperature: -40...105°C
Kind of package: reel; tape
Input bias current: 10pA
Input offset voltage: 7.5mV
Slew rate: 1.6V/μs
Voltage supply range: 0.9...7V DC
Bandwidth: 1.4MHz
Number of channels: single
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| NCS2001SN1T1G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; SOT23-5; 0.9÷7VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: SOT23-5
Mounting: SMT
Operating temperature: -40...105°C
Kind of package: reel; tape
Input bias current: 10pA
Input offset voltage: 7.5mV
Slew rate: 1.6V/μs
Voltage supply range: 0.9...7V DC
Bandwidth: 1.4MHz
Number of channels: single
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; SOT23-5; 0.9÷7VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: SOT23-5
Mounting: SMT
Operating temperature: -40...105°C
Kind of package: reel; tape
Input bias current: 10pA
Input offset voltage: 7.5mV
Slew rate: 1.6V/μs
Voltage supply range: 0.9...7V DC
Bandwidth: 1.4MHz
Number of channels: single
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| NCS2001SQ2T2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; SC70-5; 0.9÷7VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: SC70-5
Mounting: SMT
Operating temperature: -40...105°C
Kind of package: reel; tape
Input bias current: 10pA
Input offset voltage: 7.5mV
Slew rate: 1.6V/μs
Voltage supply range: 0.9...7V DC
Bandwidth: 1.4MHz
Number of channels: single
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1.4MHz; SC70-5; 0.9÷7VDC; reel,tape
Type of integrated circuit: operational amplifier
Case: SC70-5
Mounting: SMT
Operating temperature: -40...105°C
Kind of package: reel; tape
Input bias current: 10pA
Input offset voltage: 7.5mV
Slew rate: 1.6V/μs
Voltage supply range: 0.9...7V DC
Bandwidth: 1.4MHz
Number of channels: single
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| NCS20034DR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; SO14; 1.7÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Mounting: SMT
Case: SO14
Slew rate: 8V/μs
Operating temperature: -40...125°C
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Number of channels: quad
Category: SMD operational amplifiers
Description: IC: operational amplifier; 7MHz; SO14; 1.7÷5.5VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 7MHz
Mounting: SMT
Case: SO14
Slew rate: 8V/μs
Operating temperature: -40...125°C
Input offset voltage: 4mV
Voltage supply range: 1.7...5.5V DC
Kind of package: reel; tape
Input bias current: 1pA
Input offset current: 1pA
Number of channels: quad
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| LM2595DSADJR4G |
|
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; D2PAK-5; SMD; reel,tape
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Case: D2PAK-5
Mounting: SMD
Kind of package: reel; tape
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| MJB44H11G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Polarisation: bipolar
Case: D2PAK
Type of transistor: NPN
Mounting: SMD
Power dissipation: 50W
Collector current: 10A
Current gain: 60
Collector-emitter voltage: 80V
Kind of package: tube
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Polarisation: bipolar
Case: D2PAK
Type of transistor: NPN
Mounting: SMD
Power dissipation: 50W
Collector current: 10A
Current gain: 60
Collector-emitter voltage: 80V
Kind of package: tube
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| MJB44H11T4G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Polarisation: bipolar
Case: D2PAK
Type of transistor: NPN
Mounting: SMD
Power dissipation: 50W
Collector current: 10A
Current gain: 60
Collector-emitter voltage: 80V
Kind of package: reel; tape
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK
Polarisation: bipolar
Case: D2PAK
Type of transistor: NPN
Mounting: SMD
Power dissipation: 50W
Collector current: 10A
Current gain: 60
Collector-emitter voltage: 80V
Kind of package: reel; tape
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| NJW44H11G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P
Polarisation: bipolar
Case: TO3P
Type of transistor: NPN
Mounting: THT
Power dissipation: 120W
Collector current: 10A
Current gain: 100...320
Collector-emitter voltage: 80V
Frequency: 85MHz
Kind of package: tube
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 120W; TO3P
Polarisation: bipolar
Case: TO3P
Type of transistor: NPN
Mounting: THT
Power dissipation: 120W
Collector current: 10A
Current gain: 100...320
Collector-emitter voltage: 80V
Frequency: 85MHz
Kind of package: tube
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| NJVMJB44H11T4G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Polarisation: bipolar
Case: D2PAK
Type of transistor: NPN
Mounting: SMD
Power dissipation: 50W
Collector current: 10A
Current gain: 60
Collector-emitter voltage: 80V
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; D2PAK; automotive industry
Polarisation: bipolar
Case: D2PAK
Type of transistor: NPN
Mounting: SMD
Power dissipation: 50W
Collector current: 10A
Current gain: 60
Collector-emitter voltage: 80V
Kind of package: reel; tape
Application: automotive industry
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| MC33067DWR2G |
|
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.81 EUR |
| NCV8535MN500R2G |
|
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DFN10; SMD; Ch: 1
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Output current: 0.5A
Number of channels: 1
Output voltage: 5V
Application: automotive industry
Type of integrated circuit: voltage regulator
Case: DFN10
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.5A; DFN10; SMD; Ch: 1
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Kind of package: reel; tape
Output current: 0.5A
Number of channels: 1
Output voltage: 5V
Application: automotive industry
Type of integrated circuit: voltage regulator
Case: DFN10
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| FMB2222A |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.5A; 0.7W; TSOT23-6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.7W
Case: TSOT23-6
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.5A; 0.7W; TSOT23-6
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.7W
Case: TSOT23-6
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
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| NVMFS016N10MCLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 243A
Power dissipation: 32W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 243A
Power dissipation: 32W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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| NVMFWS016N10MCLT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 243A
Power dissipation: 32W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 243A
Power dissipation: 32W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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