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GBPC2506 ONSEMI GBPCxx.PDF Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
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GBPC2506W ONSEMI GBPCxx.PDF Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
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NTS4409NT1G NTS4409NT1G ONSEMI NTS4409N.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.75A; 0.28W; SC70,SOT323
Case: SC70; SOT323
Drain-source voltage: 25V
Drain current: 0.75A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 0.28W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.2nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
auf Bestellung 2110 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
176+0.41 EUR
260+0.28 EUR
307+0.23 EUR
435+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 125
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NLV14024BDR2G NLV14024BDR2G ONSEMI mc14024b-d.pdf Category: Counters/dividers
Description: IC: digital; asynchronous counter; TTL; SMD; SO14; 3÷18VDC; 600uA
Mounting: SMD
Operating temperature: -55...125°C
Case: SO14
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Quiescent current: 600µA
Application: automotive industry
Kind of package: reel; tape
Technology: TTL
Kind of integrated circuit: asynchronous counter
Produkt ist nicht verfügbar
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NSQA6V8AW5T2G ONSEMI nsqa6v8aw5t2-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A
Type of diode: TVS array
Breakdown voltage: 6.4...7.1V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 5V
Kind of package: reel; tape
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SZNSQA6V8AW5T2G ONSEMI nsqa6v8aw5t2-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A
Type of diode: TVS array
Breakdown voltage: 6.4...7.1V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NC7S04M5X NC7S04M5X ONSEMI NC7S04.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SOT23-5; 2÷6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Mounting: SMD
Case: SOT23-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Number of inputs: 1
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
250+0.29 EUR
459+0.16 EUR
625+0.11 EUR
718+0.10 EUR
860+0.08 EUR
953+0.08 EUR
Mindestbestellmenge: 250
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NC7S04P5X NC7S04P5X ONSEMI NC7S04.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC70-5; 2÷6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Produkt ist nicht verfügbar
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PCRU3060W ONSEMI Category: Transistors - Unclassified
Description: PCRU3060W
auf Bestellung 24079 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.30 EUR
Mindestbestellmenge: 22
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FODM8071 FODM8071 ONSEMI FODM8071.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 20Mbps; 40kV/μs
Case: Mini-flat 5pin
Turn-on time: 5.8ns
Turn-off time: 5.3µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
Transfer rate: 20Mbps
Slew rate: 40kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
auf Bestellung 1445 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.68 EUR
22+3.32 EUR
31+2.37 EUR
32+2.25 EUR
500+2.16 EUR
Mindestbestellmenge: 16
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NCP51400MNTXG ONSEMI NCP51400.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Operating voltage: 0.5...1.8/2.375...5.5V DC
Case: DFN10
Mounting: SMD
Operating temperature: -40...125°C
Output voltage: -0.1...3.5V
Output current: 3A
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Produkt ist nicht verfügbar
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NCV51400MNTXG ONSEMI NCP51400.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Operating voltage: 0.5...1.8/2.375...5.5V DC
Case: DFN10
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Produkt ist nicht verfügbar
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NCV51400MWTXG ONSEMI NCP51400.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Operating voltage: 0.5...1.8/2.375...5.5V DC
Case: DFN10
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Produkt ist nicht verfügbar
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S215FA ONSEMI ss29fa-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 150V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MC74VHC4052DR2G MC74VHC4052DR2G ONSEMI MC74VHC4051-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: VHC
Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC
Family: VHC
Kind of package: reel; tape
Operating temperature: -55...125°C
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MC74VHC4052DTR2G ONSEMI MC74VHC4051-D.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC
Family: VHC
Kind of package: reel; tape
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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MC33179DR2G MC33179DR2G ONSEMI MC33179DG.PDF Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 4; SO14; ±2÷18VDC,4÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 5MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 2V/μs
Operating temperature: -40...85°C
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Kind of package: reel; tape
auf Bestellung 201 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.73 EUR
82+0.88 EUR
97+0.74 EUR
100+0.72 EUR
103+0.70 EUR
107+0.67 EUR
Mindestbestellmenge: 42
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SS33 ONSEMI SS32_SS39.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape; 2.27W
Mounting: SMD
Max. forward voltage: 0.5V
Max. off-state voltage: 30V
Case: SMC
Kind of package: reel; tape
Type of diode: Schottky rectifying
Power dissipation: 2.27W
Max. forward impulse current: 100A
Semiconductor structure: single diode
Load current: 3A
Produkt ist nicht verfügbar
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ESD7461N2T5G ONSEMI Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.3W; 16.5V; bidirectional; XDFN2; reel,tape; ESD
Version: ESD
Capacitance: 0.3pF
Max. off-state voltage: 16V
Semiconductor structure: bidirectional
Breakdown voltage: 16.5V
Leakage current: 0.1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.3W
Mounting: SMD
Case: XDFN2
Produkt ist nicht verfügbar
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SMMSD301T1G ONSEMI mmsd301t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MMDL770T1G MMDL770T1G ONSEMI mmdl770t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Semiconductor structure: single diode
Capacitance: 1pF
Max. forward voltage: 1V
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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HCPL4503SDM ONSEMI hcpl2530m-d.pdf Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
auf Bestellung 26000 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.70 EUR
Mindestbestellmenge: 1000
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NTD20P06LT4G NTD20P06LT4G ONSEMI NTD20P06-DTE.PDF Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 65W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -60V
Drain current: -15.5A
On-state resistance: 0.13Ω
Gate charge: 26nC
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 2484 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.64 EUR
63+1.14 EUR
124+0.58 EUR
131+0.55 EUR
Mindestbestellmenge: 44
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BSS138K ONSEMI bss138k-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.4nC
Produkt ist nicht verfügbar
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BSS138 ONSEMI bss138-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.7nC
Produkt ist nicht verfügbar
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RGF1K ONSEMI RGF1M-D.PDF Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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GF1K ONSEMI GF1M-D.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BCP55 BCP55 ONSEMI bcp55-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1.5A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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RB521S30T5G ONSEMI rb521s30t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NSVRB521S30T5G ONSEMI rb521s30t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MBR30H100MFST3G ONSEMI mbr30h100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DFN5x6
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 0.3kA
Produkt ist nicht verfügbar
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MBR30H100CTG ONSEMI mbr30h100ct-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.8V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AB
Max. off-state voltage: 100V
Max. load current: 30A
Max. forward voltage: 0.8V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 250A
Produkt ist nicht verfügbar
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NRVB30H100MFST1G ONSEMI mbr30h100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DFN5
Max. off-state voltage: 100V
Max. load current: 60A
Max. forward voltage: 0.9V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 0.3kA
Produkt ist nicht verfügbar
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NRVB30H100MFST3G ONSEMI mbr30h100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DFN5
Max. off-state voltage: 100V
Max. load current: 60A
Max. forward voltage: 0.9V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 0.3kA
Produkt ist nicht verfügbar
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2SK3557-6-TB-E ONSEMI 2sk3557-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Produkt ist nicht verfügbar
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2SK3557-7-TB-E ONSEMI 2sk3557-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 16mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Produkt ist nicht verfügbar
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MMBZ6V8ALT1G MMBZ6V8ALT1G ONSEMI MMBZ_ser.PDF Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 24W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Case: SOT23
Tolerance: ±5%
Max. off-state voltage: 4.5V
Semiconductor structure: common anode; double
Max. forward impulse current: 2.5A
Breakdown voltage: 6.8V
Leakage current: 0.5µA
Kind of package: reel; tape
Version: ESD
Peak pulse power dissipation: 24W
Mounting: SMD
auf Bestellung 5376 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
715+0.10 EUR
1330+0.05 EUR
1938+0.04 EUR
2273+0.03 EUR
2404+0.03 EUR
3000+0.03 EUR
Mindestbestellmenge: 556
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SZMMBZ6V8ALT1G ONSEMI mmbz5v6alt1-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 25W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Case: SOT23
Tolerance: ±5%
Max. off-state voltage: 4.5V
Semiconductor structure: common anode; double
Max. forward impulse current: 2.5A
Breakdown voltage: 6.8V
Application: automotive industry
Kind of package: reel; tape
Peak pulse power dissipation: 25W
Mounting: SMD
Produkt ist nicht verfügbar
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SZMMBZ6V8ALT3G ONSEMI mmbz5v6alt1-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
10000+0.06 EUR
Mindestbestellmenge: 10000
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MMBZ5V6ALT1G MMBZ5V6ALT1G ONSEMI MMBZ_ser.PDF Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 3A; 24W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 5.6V
Max. forward impulse current: 3A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Kind of package: reel; tape
Tolerance: ±5%
Version: ESD
Leakage current: 5µA
auf Bestellung 7844 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
642+0.11 EUR
860+0.08 EUR
973+0.07 EUR
1969+0.04 EUR
2075+0.03 EUR
Mindestbestellmenge: 417
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SZMMBZ5V6ALT1G ONSEMI mmbz5v6alt1-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 3A; 25W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 5.6V
Max. forward impulse current: 3A
Peak pulse power dissipation: 25W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
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FDMS7672 ONSEMI FAIR-S-A0002363576-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 90A; 48W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 90A
Power dissipation: 48W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS004N08C ONSEMI fdms004n08c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; Idm: 637A; 125W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Pulsed drain current: 637A
Power dissipation: 125W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS015N04B ONSEMI FDMS015N04B-D.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS0300S ONSEMI fdms0300s-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 180A; 96W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 180A
Power dissipation: 96W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 133nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS0306AS ONSEMI fdms0306as-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 59W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS039N08B ONSEMI fdms039n08b-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS2D5N08C ONSEMI fdms2d5n08c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 105A; Idm: 823A; 138W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 105A
Pulsed drain current: 823A
Power dissipation: 138W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS3662 ONSEMI fdms3662-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 90A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 39A
Pulsed drain current: 90A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 24.7mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS7656AS ONSEMI ONSM-S-A0003585015-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 180A; 96W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 180A
Power dissipation: 96W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 133nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BU407 BU407 ONSEMI BU407.pdf Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 330V; 7A; 60W; TO220
Case: TO220
Mounting: THT
Power: 60W
Collector-emitter voltage: 330V
Collector current: 7A
Type of transistor: NPN
Polarisation: bipolar
Produkt ist nicht verfügbar
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BVSS84LT1G BVSS84LT1G ONSEMI bss84lt1-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.225W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: -50V
Drain current: -130mA
On-state resistance: 10Ω
Type of transistor: P-MOSFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 3152 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.34 EUR
313+0.23 EUR
368+0.19 EUR
468+0.15 EUR
650+0.11 EUR
685+0.10 EUR
Mindestbestellmenge: 209
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NVMTS0D4N04CTXG ONSEMI nvmts0d4n04c-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 108000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+10.00 EUR
Mindestbestellmenge: 3000
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FODM217A FODM217A ONSEMI FODM214.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Urmax: 6V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 80-160%@5mA
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
auf Bestellung 848 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.72 EUR
150+0.48 EUR
196+0.37 EUR
220+0.33 EUR
225+0.32 EUR
232+0.31 EUR
500+0.30 EUR
Mindestbestellmenge: 100
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FODM217D FODM217D ONSEMI FODM214.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Urmax: 6V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 300-600%@5mA
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
auf Bestellung 793 Stücke:
Lieferzeit 14-21 Tag (e)
87+0.83 EUR
137+0.52 EUR
181+0.40 EUR
234+0.31 EUR
248+0.29 EUR
Mindestbestellmenge: 87
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FODM217B FODM217B ONSEMI FODM214.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Urmax: 6V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 130-260%@5mA
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
auf Bestellung 1904 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.76 EUR
139+0.51 EUR
190+0.38 EUR
197+0.36 EUR
500+0.34 EUR
Mindestbestellmenge: 95
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FODM217C FODM217C ONSEMI FODM214.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Urmax: 6V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 200-400%@5mA
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
auf Bestellung 1327 Stücke:
Lieferzeit 14-21 Tag (e)
80+0.90 EUR
133+0.54 EUR
165+0.43 EUR
194+0.37 EUR
247+0.29 EUR
260+0.28 EUR
500+0.27 EUR
Mindestbestellmenge: 80
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FODM217DR2V ONSEMI FODM217DR2V.PDF Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Mini-flat 4pin
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 300-600%@5mA
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
Manufacturer series: FODM217
Produkt ist nicht verfügbar
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FODM217AR2 ONSEMI fodm214-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 80-160%@5mA
Collector-emitter voltage: 80V
Case: MFP4
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
Produkt ist nicht verfügbar
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FODM217BR2V ONSEMI fodm214-d.pdf Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 130-260%@5mA
Collector-emitter voltage: 80V
Case: MFP4
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
Produkt ist nicht verfügbar
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GBPC2506 GBPCxx.PDF
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Max. forward voltage: 1.1V
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GBPC2506W GBPCxx.PDF
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 600V; If: 25A; Ifsm: 300A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.6kV
Load current: 25A
Max. forward impulse current: 0.3kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Max. forward voltage: 1.1V
Produkt ist nicht verfügbar
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NTS4409NT1G NTS4409N.PDF
NTS4409NT1G
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 0.75A; 0.28W; SC70,SOT323
Case: SC70; SOT323
Drain-source voltage: 25V
Drain current: 0.75A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 0.28W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.2nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Mounting: SMD
auf Bestellung 2110 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
176+0.41 EUR
260+0.28 EUR
307+0.23 EUR
435+0.16 EUR
1000+0.15 EUR
Mindestbestellmenge: 125
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NLV14024BDR2G mc14024b-d.pdf
NLV14024BDR2G
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; asynchronous counter; TTL; SMD; SO14; 3÷18VDC; 600uA
Mounting: SMD
Operating temperature: -55...125°C
Case: SO14
Supply voltage: 3...18V DC
Type of integrated circuit: digital
Quiescent current: 600µA
Application: automotive industry
Kind of package: reel; tape
Technology: TTL
Kind of integrated circuit: asynchronous counter
Produkt ist nicht verfügbar
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NSQA6V8AW5T2G nsqa6v8aw5t2-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A
Type of diode: TVS array
Breakdown voltage: 6.4...7.1V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 5V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SZNSQA6V8AW5T2G nsqa6v8aw5t2-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.4÷7.1V; quadruple,common anode; SC88A
Type of diode: TVS array
Breakdown voltage: 6.4...7.1V
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC88A
Max. off-state voltage: 5V
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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NC7S04M5X NC7S04.pdf
NC7S04M5X
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SOT23-5; 2÷6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Mounting: SMD
Case: SOT23-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Number of inputs: 1
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
459+0.16 EUR
625+0.11 EUR
718+0.10 EUR
860+0.08 EUR
953+0.08 EUR
Mindestbestellmenge: 250
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NC7S04P5X NC7S04.pdf
NC7S04P5X
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; IN: 1; SMD; SC70-5; 2÷6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Number of inputs: 1
Mounting: SMD
Case: SC70-5
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Quiescent current: 10µA
Produkt ist nicht verfügbar
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PCRU3060W
Hersteller: ONSEMI
Category: Transistors - Unclassified
Description: PCRU3060W
auf Bestellung 24079 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.30 EUR
Mindestbestellmenge: 22
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FODM8071 FODM8071.pdf
FODM8071
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; 20Mbps; 40kV/μs
Case: Mini-flat 5pin
Turn-on time: 5.8ns
Turn-off time: 5.3µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
Transfer rate: 20Mbps
Slew rate: 40kV/μs
Type of optocoupler: optocoupler
Mounting: SMD
auf Bestellung 1445 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.68 EUR
22+3.32 EUR
31+2.37 EUR
32+2.25 EUR
500+2.16 EUR
Mindestbestellmenge: 16
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NCP51400MNTXG NCP51400.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Operating voltage: 0.5...1.8/2.375...5.5V DC
Case: DFN10
Mounting: SMD
Operating temperature: -40...125°C
Output voltage: -0.1...3.5V
Output current: 3A
Number of channels: 1
Application: for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Produkt ist nicht verfügbar
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NCV51400MNTXG NCP51400.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Operating voltage: 0.5...1.8/2.375...5.5V DC
Case: DFN10
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Produkt ist nicht verfügbar
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NCV51400MWTXG NCP51400.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; DDR memory termination regulator; Uout: -0.1÷3.5V
Type of integrated circuit: PMIC
Operating voltage: 0.5...1.8/2.375...5.5V DC
Case: DFN10
Mounting: SMD
Operating temperature: max. 150°C
Output voltage: -0.1...3.5V
Output current: 3A
Number of channels: 1
Application: automotive industry; for DDR memories
Kind of integrated circuit: DDR memory termination regulator
Produkt ist nicht verfügbar
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S215FA ss29fa-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 150V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 150V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.95V
Max. forward impulse current: 50A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MC74VHC4052DR2G MC74VHC4051-D.pdf
MC74VHC4052DR2G
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: SOIC16
Manufacturer series: VHC
Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC
Family: VHC
Kind of package: reel; tape
Operating temperature: -55...125°C
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MC74VHC4052DTR2G MC74VHC4051-D.pdf
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 4bit,analog,demultiplexer,multiplexer; Ch: 2; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 4bit; analog; demultiplexer; multiplexer
Number of channels: 2
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Manufacturer series: VHC
Supply voltage: -6...0V DC; 2...6V DC; 2...12V DC
Family: VHC
Kind of package: reel; tape
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
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MC33179DR2G MC33179DG.PDF
MC33179DR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 4; SO14; ±2÷18VDC,4÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 5MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 2V/μs
Operating temperature: -40...85°C
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Kind of package: reel; tape
auf Bestellung 201 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.73 EUR
82+0.88 EUR
97+0.74 EUR
100+0.72 EUR
103+0.70 EUR
107+0.67 EUR
Mindestbestellmenge: 42
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SS33 SS32_SS39.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 30V; 3A; reel,tape; 2.27W
Mounting: SMD
Max. forward voltage: 0.5V
Max. off-state voltage: 30V
Case: SMC
Kind of package: reel; tape
Type of diode: Schottky rectifying
Power dissipation: 2.27W
Max. forward impulse current: 100A
Semiconductor structure: single diode
Load current: 3A
Produkt ist nicht verfügbar
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ESD7461N2T5G
Hersteller: ONSEMI
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.3W; 16.5V; bidirectional; XDFN2; reel,tape; ESD
Version: ESD
Capacitance: 0.3pF
Max. off-state voltage: 16V
Semiconductor structure: bidirectional
Breakdown voltage: 16.5V
Leakage current: 0.1µA
Kind of package: reel; tape
Type of diode: TVS
Peak pulse power dissipation: 0.3W
Mounting: SMD
Case: XDFN2
Produkt ist nicht verfügbar
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SMMSD301T1G mmsd301t1-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD123; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD123
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MMDL770T1G mmdl770t1-d.pdf
MMDL770T1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 70V; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 70V
Semiconductor structure: single diode
Capacitance: 1pF
Max. forward voltage: 1V
Kind of package: reel; tape
Power dissipation: 0.2W
Produkt ist nicht verfügbar
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HCPL4503SDM hcpl2530m-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler
Type of optocoupler: optocoupler
auf Bestellung 26000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1000+0.70 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
NTD20P06LT4G NTD20P06-DTE.PDF
NTD20P06LT4G
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15.5A; 65W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Power dissipation: 65W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -60V
Drain current: -15.5A
On-state resistance: 0.13Ω
Gate charge: 26nC
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 2484 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.64 EUR
63+1.14 EUR
124+0.58 EUR
131+0.55 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
BSS138K bss138k-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 350mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 2.4nC
Produkt ist nicht verfügbar
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BSS138 bss138-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 220mA; 360mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.22A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.7nC
Produkt ist nicht verfügbar
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RGF1K RGF1M-D.PDF
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GF1K GF1M-D.pdf
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 800V; 1A; SMA; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Case: SMA
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BCP55 bcp55-d.pdf
BCP55
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 60V; 1.5A; 1.5W; SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Power dissipation: 1.5W
Case: SOT223
Current gain: 40...250
Mounting: SMD
Kind of package: reel; tape
Produkt ist nicht verfügbar
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RB521S30T5G rb521s30t1-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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NSVRB521S30T5G rb521s30t1-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 1A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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MBR30H100MFST3G mbr30h100mfs-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SMD; 100V; 30A; reel,tape
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DFN5x6
Max. off-state voltage: 100V
Max. forward voltage: 0.9V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 0.3kA
Produkt ist nicht verfügbar
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MBR30H100CTG mbr30h100ct-d.pdf
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 15Ax2; TO220AB; Ufmax: 0.8V
Kind of package: tube
Type of diode: Schottky rectifying
Mounting: THT
Case: TO220AB
Max. off-state voltage: 100V
Max. load current: 30A
Max. forward voltage: 0.8V
Load current: 15A x2
Semiconductor structure: common cathode; double
Max. forward impulse current: 250A
Produkt ist nicht verfügbar
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NRVB30H100MFST1G mbr30h100mfs-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DFN5
Max. off-state voltage: 100V
Max. load current: 60A
Max. forward voltage: 0.9V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 0.3kA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NRVB30H100MFST3G mbr30h100mfs-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Application: automotive industry
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Case: DFN5
Max. off-state voltage: 100V
Max. load current: 60A
Max. forward voltage: 0.9V
Load current: 30A
Semiconductor structure: single diode
Max. forward impulse current: 0.3kA
Produkt ist nicht verfügbar
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2SK3557-6-TB-E 2sk3557-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 10mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 10mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Produkt ist nicht verfügbar
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2SK3557-7-TB-E 2sk3557-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.2W; SC59; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain-source voltage: 15V
Drain current: 16mA
Power dissipation: 0.2W
Case: SC59
Gate-source voltage: -15V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Produkt ist nicht verfügbar
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MMBZ6V8ALT1G MMBZ_ser.PDF
MMBZ6V8ALT1G
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 24W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Case: SOT23
Tolerance: ±5%
Max. off-state voltage: 4.5V
Semiconductor structure: common anode; double
Max. forward impulse current: 2.5A
Breakdown voltage: 6.8V
Leakage current: 0.5µA
Kind of package: reel; tape
Version: ESD
Peak pulse power dissipation: 24W
Mounting: SMD
auf Bestellung 5376 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
715+0.10 EUR
1330+0.05 EUR
1938+0.04 EUR
2273+0.03 EUR
2404+0.03 EUR
3000+0.03 EUR
Mindestbestellmenge: 556
Im Einkaufswagen  Stück im Wert von  UAH
SZMMBZ6V8ALT1G mmbz5v6alt1-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.8V; 2.5A; 25W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Case: SOT23
Tolerance: ±5%
Max. off-state voltage: 4.5V
Semiconductor structure: common anode; double
Max. forward impulse current: 2.5A
Breakdown voltage: 6.8V
Application: automotive industry
Kind of package: reel; tape
Peak pulse power dissipation: 25W
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZMMBZ6V8ALT3G mmbz5v6alt1-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array
Type of diode: TVS array
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10000+0.06 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
MMBZ5V6ALT1G MMBZ_ser.PDF
MMBZ5V6ALT1G
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 3A; 24W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 5.6V
Max. forward impulse current: 3A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Kind of package: reel; tape
Tolerance: ±5%
Version: ESD
Leakage current: 5µA
auf Bestellung 7844 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
642+0.11 EUR
860+0.08 EUR
973+0.07 EUR
1969+0.04 EUR
2075+0.03 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
SZMMBZ5V6ALT1G mmbz5v6alt1-d.pdf
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.6V; 3A; 25W; double,common anode; SOT23; ±5%
Type of diode: TVS array
Breakdown voltage: 5.6V
Max. forward impulse current: 3A
Peak pulse power dissipation: 25W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 3V
Kind of package: reel; tape
Application: automotive industry
Tolerance: ±5%
Produkt ist nicht verfügbar
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FDMS7672 FAIR-S-A0002363576-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 90A; 48W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 90A
Power dissipation: 48W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.9mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS004N08C fdms004n08c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 80A; Idm: 637A; 125W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 80A
Pulsed drain current: 637A
Power dissipation: 125W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS015N04B FDMS015N04B-D.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 118nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS0300S fdms0300s-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 180A; 96W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 180A
Power dissipation: 96W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 133nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS0306AS fdms0306as-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 100A; 59W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 100A
Power dissipation: 59W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS039N08B fdms039n08b-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; Idm: 400A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS2D5N08C fdms2d5n08c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 105A; Idm: 823A; 138W; Power56
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 105A
Pulsed drain current: 823A
Power dissipation: 138W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 84nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS3662 fdms3662-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 39A; Idm: 90A; 104W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 39A
Pulsed drain current: 90A
Power dissipation: 104W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 24.7mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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FDMS7656AS ONSM-S-A0003585015-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 49A; Idm: 180A; 96W; Power56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 49A
Pulsed drain current: 180A
Power dissipation: 96W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 133nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BU407 BU407.pdf
BU407
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 330V; 7A; 60W; TO220
Case: TO220
Mounting: THT
Power: 60W
Collector-emitter voltage: 330V
Collector current: 7A
Type of transistor: NPN
Polarisation: bipolar
Produkt ist nicht verfügbar
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BVSS84LT1G bss84lt1-d.pdf
BVSS84LT1G
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 0.225W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: -50V
Drain current: -130mA
On-state resistance: 10Ω
Type of transistor: P-MOSFET
Power dissipation: 0.225W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
auf Bestellung 3152 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
313+0.23 EUR
368+0.19 EUR
468+0.15 EUR
650+0.11 EUR
685+0.10 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
NVMTS0D4N04CTXG nvmts0d4n04c-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 108000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3000+10.00 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FODM217A FODM214.pdf
FODM217A
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Urmax: 6V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 80-160%@5mA
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
auf Bestellung 848 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
150+0.48 EUR
196+0.37 EUR
220+0.33 EUR
225+0.32 EUR
232+0.31 EUR
500+0.30 EUR
Mindestbestellmenge: 100
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FODM217D FODM214.pdf
FODM217D
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Urmax: 6V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 300-600%@5mA
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
auf Bestellung 793 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
87+0.83 EUR
137+0.52 EUR
181+0.40 EUR
234+0.31 EUR
248+0.29 EUR
Mindestbestellmenge: 87
Im Einkaufswagen  Stück im Wert von  UAH
FODM217B FODM214.pdf
FODM217B
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Urmax: 6V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 130-260%@5mA
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
auf Bestellung 1904 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
139+0.51 EUR
190+0.38 EUR
197+0.36 EUR
500+0.34 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
FODM217C FODM214.pdf
FODM217C
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Urmax: 6V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 200-400%@5mA
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
auf Bestellung 1327 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
80+0.90 EUR
133+0.54 EUR
165+0.43 EUR
194+0.37 EUR
247+0.29 EUR
260+0.28 EUR
500+0.27 EUR
Mindestbestellmenge: 80
Im Einkaufswagen  Stück im Wert von  UAH
FODM217DR2V FODM217DR2V.PDF
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; 3.75kV; Mini-flat 4pin
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 300-600%@5mA
Case: Mini-flat 4pin
Turn-on time: 3µs
Turn-off time: 3µs
Manufacturer series: FODM217
Produkt ist nicht verfügbar
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FODM217AR2 fodm214-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 80-160%@5mA
Collector-emitter voltage: 80V
Case: MFP4
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FODM217BR2V fodm214-d.pdf
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 130-260%@5mA
Collector-emitter voltage: 80V
Case: MFP4
Turn-on time: 3µs
Turn-off time: 3µs
Max. off-state voltage: 6V
Manufacturer series: FODM217
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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