FDS2572 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 150V 4.9A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.12 EUR |
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Technische Details FDS2572 onsemi
Description: MOSFET N-CH 150V 4.9A 8SOIC, Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 47mOhm @ 4.9A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote FDS2572 nach Preis ab 0.85 EUR bis 3.94 EUR
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FDS2572 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 150V 4.9A 8-Pin SOIC T/R |
auf Bestellung 1212 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS2572 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 150V 4.9A 8-Pin SOIC T/R |
auf Bestellung 1212 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS2572 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 150V 4.9A 8-Pin SOIC T/R |
auf Bestellung 2625 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS2572 | Hersteller : Fairchild |
Transistor N-Channel MOSFET; 150V; 20V; 53mOhm; 4,9A; 2,5W; -55°C ~ 150°C; FDS2572 TFDS2572 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS2572 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 3.1A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: UltraFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 3.1A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 53mΩ Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2032 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS2572 | Hersteller : onsemi |
Description: MOSFET N-CH 150V 4.9A 8SOIC Current - Continuous Drain (Id) @ 25°C: 4.9A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 47mOhm @ 4.9A, 10V |
auf Bestellung 14221 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS2572 | Hersteller : onsemi |
MOSFETs 150V N-Ch UltraFET Trench |
auf Bestellung 182 Stücke: Lieferzeit 10-14 Tag (e) |
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