Technische Details FDMS86322 ON Semiconductor
Description: MOSFET N-CH 80V 13A/60A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc), Rds On (Max) @ Id, Vgs: 7.65mOhm @ 13A, 10V, Power Dissipation (Max): 2.5W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V.
Weitere Produktangebote FDMS86322 nach Preis ab 1.78 EUR bis 5.9 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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FDMS86322 | ON Semiconductor |
 Trans MOSFET N-CH Si 80V 13A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86322 | onsemi |
Description: MOSFET N-CH 80V 13A/60A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 7.65mOhm @ 13A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86322 | ON Semiconductor |
Trans MOSFET N-CH Si 80V 13A 8-Pin PQFN EP T/R |
auf Bestellung 3249 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86322 | ON Semiconductor |
Trans MOSFET N-CH Si 80V 13A 8-Pin PQFN EP T/R |
auf Bestellung 1947 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86322 | ON Semiconductor |
Trans MOSFET N-CH Si 80V 13A 8-Pin PQFN EP T/R |
auf Bestellung 1825 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86322 | onsemi / Fairchild |
MOSFETs 80V N-Channel PowerTrench MOSFET |
auf Bestellung 1586 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86322 | onsemi |
Description: MOSFET N-CH 80V 13A/60A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 7.65mOhm @ 13A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V |
auf Bestellung 7184 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDMS86322 |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 80V 13A 8-Pin PQFN EP T/R
Trans MOSFET N-CH Si 80V 13A 8-Pin PQFN EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.78 EUR |
| FDMS86322 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 13A/60A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.65mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Description: MOSFET N-CH 80V 13A/60A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.65mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.86 EUR |
| FDMS86322 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 80V 13A 8-Pin PQFN EP T/R
Trans MOSFET N-CH Si 80V 13A 8-Pin PQFN EP T/R
auf Bestellung 3249 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 213+ | 3.11 EUR |
| 500+ | 2.75 EUR |
| 1000+ | 2.48 EUR |
| FDMS86322 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 80V 13A 8-Pin PQFN EP T/R
Trans MOSFET N-CH Si 80V 13A 8-Pin PQFN EP T/R
auf Bestellung 1947 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 213+ | 3.11 EUR |
| 500+ | 2.75 EUR |
| 1000+ | 2.48 EUR |
| FDMS86322 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 80V 13A 8-Pin PQFN EP T/R
Trans MOSFET N-CH Si 80V 13A 8-Pin PQFN EP T/R
auf Bestellung 1825 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 213+ | 3.11 EUR |
| 500+ | 2.75 EUR |
| 1000+ | 2.48 EUR |
| FDMS86322 |
|
Hersteller: onsemi / Fairchild
MOSFETs 80V N-Channel PowerTrench MOSFET
MOSFETs 80V N-Channel PowerTrench MOSFET
auf Bestellung 1586 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.66 EUR |
| 10+ | 3.52 EUR |
| 100+ | 2.68 EUR |
| 500+ | 2.39 EUR |
| 1000+ | 2.24 EUR |
| FDMS86322 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 13A/60A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.65mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
Description: MOSFET N-CH 80V 13A/60A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.65mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V
auf Bestellung 7184 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.9 EUR |
| 10+ | 3.83 EUR |
| 100+ | 2.67 EUR |
| 500+ | 2.27 EUR |