FDMS86322 ON Semiconductor
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.52 EUR |
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Technische Details FDMS86322 ON Semiconductor
Description: MOSFET N-CH 80V 13A/60A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc), Rds On (Max) @ Id, Vgs: 7.65mOhm @ 13A, 10V, Power Dissipation (Max): 2.5W (Ta), 104W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V.
Weitere Produktangebote FDMS86322 nach Preis ab 1.26 EUR bis 4.12 EUR
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FDMS86322 | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH Si 80V 13A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86322 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 80V 13A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86322 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 80V 13A 8-Pin PQFN EP T/R |
auf Bestellung 1453 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86322 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 80V 13A 8-Pin PQFN EP T/R |
auf Bestellung 1453 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86322 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 80V 13A 8-Pin PQFN EP T/R |
auf Bestellung 1453 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS86322 | Hersteller : onsemi / Fairchild |
MOSFETs 80V N-Channel PowerTrench MOSFET |
auf Bestellung 3558 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86322 | Hersteller : onsemi |
Description: MOSFET N-CH 80V 13A/60A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 7.65mOhm @ 13A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V |
auf Bestellung 2558 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86322 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 80V 13A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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FDMS86322 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 80V 13A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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| FDMS86322 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 60A; Idm: 200A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 60A Pulsed drain current: 200A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMS86322 | Hersteller : onsemi |
Description: MOSFET N-CH 80V 13A/60A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 7.65mOhm @ 13A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 50 V |
Produkt ist nicht verfügbar |
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| FDMS86322 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 60A; Idm: 200A; 104W; Power56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 60A Pulsed drain current: 200A Power dissipation: 104W Case: Power56 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |