NVHL160N120SC1 ONSEMI
Hersteller: ONSEMI
Description: ONSEMI - NVHL160N120SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 17 A, 1.2 kV, 0.162 ohm, TO-247
tariffCode: 85412900
Drain-Source-Spannung Vds: 1.2kV
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 17A
hazardous: false
rohsPhthalatesCompliant: YES
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3.1V
MOSFET-Modul-Konfiguration: Eins
euEccn: NLR
Verlustleistung: 119W
Bauform - Transistor: TO-247
Anzahl der Pins: 3Pin(s)
Produktpalette: EliteSiC Series
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 20V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.162ohm
SVHC: Lead (25-Jun-2025)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 20.56 EUR |
| 14+ | 16.76 EUR |
| 17+ | 13.34 EUR |
| 50+ | 13.33 EUR |
| 100+ | 13.3 EUR |
| 250+ | 13.28 EUR |
Produktrezensionen
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Technische Details NVHL160N120SC1 ONSEMI
Description: ONSEMI - NVHL160N120SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 17 A, 1.2 kV, 0.162 ohm, TO-247, tariffCode: 85412900, Drain-Source-Spannung Vds: 1.2kV, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 17A, hazardous: false, rohsPhthalatesCompliant: YES, isCanonical: Y, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 3.1V, MOSFET-Modul-Konfiguration: Eins, euEccn: NLR, Verlustleistung: 119W, Bauform - Transistor: TO-247, Anzahl der Pins: 3Pin(s), Produktpalette: EliteSiC Series, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 20V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.162ohm, SVHC: Lead (25-Jun-2025).
Weitere Produktangebote NVHL160N120SC1 nach Preis ab 11.51 EUR bis 24.88 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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NVHL160N120SC1 | onsemi |
SiC MOSFETs SIC MOS TO247-3L 160MOHM 1200V |
auf Bestellung 2423 Stücke: Lieferzeit 10-14 Tag (e) |
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NVHL160N120SC1 | onsemi |
Description: SICFET N-CH 1200V 17A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V Power Dissipation (Max): 119W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 2.5mA Supplier Device Package: TO-247-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 11619 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVHL160N120SC1 | ON Semiconductor |
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auf Bestellung 410 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVHL160N120SC1 |
|
Hersteller: onsemi
SiC MOSFETs SIC MOS TO247-3L 160MOHM 1200V
SiC MOSFETs SIC MOS TO247-3L 160MOHM 1200V
auf Bestellung 2423 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.4 EUR |
| 10+ | 14.74 EUR |
| 120+ | 12.61 EUR |
| 510+ | 12.04 EUR |
| 1020+ | 12.02 EUR |
| NVHL160N120SC1 |
|
Hersteller: onsemi
Description: SICFET N-CH 1200V 17A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V
Qualification: AEC-Q101
Description: SICFET N-CH 1200V 17A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 11619 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.88 EUR |
| 30+ | 15.02 EUR |
| 120+ | 12.86 EUR |
| 510+ | 11.51 EUR |
| NVHL160N120SC1 |
|
Hersteller: ON Semiconductor
auf Bestellung 410 Stücke:
Lieferzeit 21-28 Tag (e)