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FDD86250 FDD86250 ONSEMI fdd86250-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; Idm: 164A; 132W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 27A
Power dissipation: 132W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 164A
auf Bestellung 2407 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.16 EUR
42+1.72 EUR
44+1.63 EUR
250+1.6 EUR
500+1.57 EUR
Mindestbestellmenge: 34
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NTMFSC012N15MC ONSEMI ntmfsc012n15mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 80A; Idm: 1067A; 58W; PQFN8
Mounting: SMD
Case: PQFN8
Drain-source voltage: 150V
Drain current: 80A
On-state resistance: 11.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 58W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 32.4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1067A
Produkt ist nicht verfügbar
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SBAS16LT1G SBAS16LT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6948ADA88A469&compId=BAS16LT1G.PDF?ci_sign=3b3e1282d94f5f499c543d6dc82ba58136f4a26e Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 1819 Stücke:
Lieferzeit 14-21 Tag (e)
554+0.13 EUR
676+0.11 EUR
758+0.094 EUR
1169+0.061 EUR
1263+0.057 EUR
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BAS16LT3G BAS16LT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6948ADA88A469&compId=BAS16LT1G.PDF?ci_sign=3b3e1282d94f5f499c543d6dc82ba58136f4a26e Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Produkt ist nicht verfügbar
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SBAS16LT3G SBAS16LT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6948ADA88A469&compId=BAS16LT1G.PDF?ci_sign=3b3e1282d94f5f499c543d6dc82ba58136f4a26e Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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FQT1N80TF-WS FQT1N80TF-WS ONSEMI fqt1n80-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.12A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.12A
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 20Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 2.1W
Produkt ist nicht verfügbar
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FQU1N80TU ONSEMI fqu1n80-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 630mA; Idm: 4A; 45W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.63A
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 20Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 7.2nC
Power dissipation: 45W
Pulsed drain current: 4A
Produkt ist nicht verfügbar
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BD13810STU BD13810STU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA6F24EF38EAE40CE&compId=BD136_138_140.pdf?ci_sign=110b6f88cafbe0e2a7fcb0c0b1b608b4bf5ae0b0 Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO126ISO
Current gain: 63...160
Mounting: THT
Kind of package: tube
auf Bestellung 1248 Stücke:
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151+0.48 EUR
167+0.43 EUR
191+0.38 EUR
202+0.35 EUR
480+0.34 EUR
Mindestbestellmenge: 151
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CPH3216-TL-E CPH3216-TL-E ONSEMI en6405-d.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 1A; 0.9W; CPH3
Power dissipation: 0.9W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: CPH3
Frequency: 420MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 1A
Type of transistor: NPN
Produkt ist nicht verfügbar
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SZMMBZ5241BLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 2µA
Manufacturer series: MMBZ52xxBLT1G
Application: automotive industry
Produkt ist nicht verfügbar
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FDC6561AN FDC6561AN ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE415E2FED9E28&compId=FDC6561AN.pdf?ci_sign=31da6a276db3534f0b9f0a4f9e8b203a89a1c493 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 3.2nC
On-state resistance: 152mΩ
Power dissipation: 0.96W
Drain current: 2.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
auf Bestellung 867 Stücke:
Lieferzeit 14-21 Tag (e)
67+1.07 EUR
93+0.78 EUR
211+0.34 EUR
223+0.32 EUR
Mindestbestellmenge: 67
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NDC7002N NDC7002N ONSEMI pVersion=0046&contRep=ZT&docId=E20E0CF99AC49DF1A303005056AB0C4F&compId=NDC7002N.pdf?ci_sign=700e2757c62f23933ea86ede021e99436a8a3766 Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.51A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.51A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3274 Stücke:
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162+0.44 EUR
197+0.36 EUR
217+0.33 EUR
274+0.26 EUR
302+0.24 EUR
521+0.14 EUR
550+0.13 EUR
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FDC5614P FDC5614P ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A48AEDAD788F0A50&compId=FDC5614P-DTE.pdf?ci_sign=15f5eeeaa1d3b2143fa6d597203868db13d69957 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4291 Stücke:
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84+0.86 EUR
97+0.74 EUR
108+0.66 EUR
154+0.47 EUR
248+0.29 EUR
262+0.27 EUR
3000+0.26 EUR
Mindestbestellmenge: 84
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FDC6318P FDC6318P ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE1562AE24DE28&compId=FDC6318P.pdf?ci_sign=ae34da262379e255b90d211623f7773f26431455 Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -2.5A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.5A
Gate charge: 8nC
On-state resistance: 0.2Ω
Power dissipation: 0.96W
Gate-source voltage: ±8V
auf Bestellung 2789 Stücke:
Lieferzeit 14-21 Tag (e)
71+1.02 EUR
94+0.77 EUR
108+0.66 EUR
128+0.56 EUR
135+0.53 EUR
250+0.51 EUR
Mindestbestellmenge: 71
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FDC6327C FDC6327C ONSEMI fdc6327c-d.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 2.7/-1.9A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.13/0.27Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
auf Bestellung 1732 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.19 EUR
75+0.96 EUR
100+0.72 EUR
249+0.29 EUR
264+0.27 EUR
Mindestbestellmenge: 61
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NDC7003P NDC7003P ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DE739DB2174745&compId=NDC7003P.pdf?ci_sign=5c421510fe44da4ad1d95dee73eb77a06ed2bf63 Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.34A
Gate charge: 2.2nC
Power dissipation: 0.96W
On-state resistance: 10Ω
Gate-source voltage: ±20V
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.39 EUR
205+0.35 EUR
257+0.28 EUR
300+0.24 EUR
511+0.14 EUR
544+0.13 EUR
Mindestbestellmenge: 186
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NDC7001C NDC7001C ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DE6FBA10696745&compId=NDC7001C.pdf?ci_sign=fafcc44f8fba68da3bbcbe355a6171b7c2c33ffa Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 0.51/-0.34A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 4/10Ω
Mounting: SMD
Gate charge: 1.5/2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
auf Bestellung 1259 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
153+0.47 EUR
197+0.36 EUR
271+0.26 EUR
286+0.25 EUR
1000+0.24 EUR
Mindestbestellmenge: 120
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FDC6321C FDC6321C ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE180B16ED3E28&compId=FDC6321C.pdf?ci_sign=0983ccd23aa10f3fa785907e3ddb9524ecfa334b Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 0.68/-0.46A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 720/1220mΩ
Mounting: SMD
Gate charge: 2.3/1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
auf Bestellung 1433 Stücke:
Lieferzeit 14-21 Tag (e)
99+0.73 EUR
111+0.64 EUR
126+0.57 EUR
197+0.36 EUR
209+0.34 EUR
500+0.33 EUR
Mindestbestellmenge: 99
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FDC6333C FDC6333C ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE20DC87FB3E28&compId=FDC6333C.pdf?ci_sign=d9aa1d00b0d0749eb8b25b38b8ba986528b35ddd Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.5/-2A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±16/±25V
On-state resistance: 150/220mΩ
Mounting: SMD
Gate charge: 6.6/5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
auf Bestellung 172 Stücke:
Lieferzeit 14-21 Tag (e)
85+0.84 EUR
96+0.75 EUR
107+0.67 EUR
147+0.49 EUR
172+0.41 EUR
Mindestbestellmenge: 85
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FDC658P FDC658P ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE496FB62DBE28&compId=FDC658P.pdf?ci_sign=466ec4213f6486879e0e409ee8e782f401901967 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2759 Stücke:
Lieferzeit 14-21 Tag (e)
66+1.09 EUR
76+0.94 EUR
85+0.85 EUR
154+0.46 EUR
163+0.44 EUR
1000+0.42 EUR
Mindestbestellmenge: 66
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FDC658AP FDC658AP ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8E3FC6627355EA&compId=FDC658AP.pdf?ci_sign=67e40d1a9236ccbd26c1eaa38a3cf102e25ea8a0 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±25V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 8.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 3291 Stücke:
Lieferzeit 14-21 Tag (e)
82+0.87 EUR
111+0.64 EUR
150+0.48 EUR
232+0.31 EUR
246+0.29 EUR
1000+0.28 EUR
Mindestbestellmenge: 82
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FDC608PZ FDC608PZ ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE0521B6D0BE28&compId=FDC608PZ.pdf?ci_sign=42dea0deed88e4a495dcc7ca0bb8a49350534121 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.8A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.8A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.61 EUR
153+0.47 EUR
184+0.39 EUR
236+0.3 EUR
249+0.29 EUR
1000+0.28 EUR
Mindestbestellmenge: 117
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FDC638APZ FDC638APZ ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE2EEEB21AFE28&compId=FDC638APZ.pdf?ci_sign=a34f74f506be412f57245585a89a9daaa27d7866 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
88+0.82 EUR
109+0.66 EUR
146+0.49 EUR
286+0.25 EUR
304+0.24 EUR
Mindestbestellmenge: 88
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FDC638P FDC638P ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE325627E07E28&compId=FDC638P.pdf?ci_sign=5f98fbb479d4a0ddac702ff34021f498553e81b2 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1064 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
129+0.56 EUR
154+0.47 EUR
218+0.33 EUR
231+0.31 EUR
Mindestbestellmenge: 112
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FDC610PZ FDC610PZ ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE095835B0BE28&compId=FDC610PZ.pdf?ci_sign=bc8458006aa7d1578219a992334348fefe69bb64 Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Case: SuperSOT-6
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Gate charge: 13nC
On-state resistance: 75mΩ
Power dissipation: 1.6W
Gate-source voltage: ±25V
Kind of channel: enhancement
auf Bestellung 1062 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
127+0.57 EUR
241+0.3 EUR
254+0.28 EUR
1000+0.27 EUR
Mindestbestellmenge: 105
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NLSX5014MUTAG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D91A71E5820&compId=NLSX5014DR2G.pdf?ci_sign=0f8df37a9720c808eba5ee0207031de4a1e6313c Category: Level translators
Description: IC: digital; Ch: 4; 0.9÷4.5VDC; SMD; UQFN12; -55÷125°C; reel,tape
Type of integrated circuit: digital
Case: UQFN12
Mounting: SMD
Kind of package: reel; tape
Number of channels: 4
Integrated circuit features: 5V tolerant on inputs/outputs
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Operating temperature: -55...125°C
Number of inputs: 4
Number of outputs: 4
Supply voltage: 0.9...4.5V DC
Frequency: 100MHz
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FGD2736G3-F085V ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94EA63D56B2760CE&compId=FGD2736G3-F085V.PDF?ci_sign=25ca317c294b05d518d3048aa1fb7f7a7f154737 Category: SMD IGBT transistors
Description: Transistor: IGBT; 360V; 24.3A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 360V
Collector current: 24.3A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
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MMSZ4685T1G MMSZ4685T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Manufacturer series: MMSZ4xxT1G
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 7.5µA
Power dissipation: 0.5W
Zener voltage: 3.6V
Tolerance: ±5%
Kind of package: reel; tape
auf Bestellung 1152 Stücke:
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1N5375BG 1N5375BG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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1N5375BRLG 1N5375BRLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
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NTMFS7D5N15MC ONSEMI ntmfs7d5n15mc-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 95.6A; Idm: 478A; 166.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 95.6A
Pulsed drain current: 478A
Power dissipation: 166.7W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 7.9mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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NTMFS7D8N10GTWG ONSEMI ntmfs7d8n10g-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; Idm: 1656A; 187W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Pulsed drain current: 1656A
Power dissipation: 187W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
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NCV1117DTARKG
+1
 		NCV1117DTARKG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC95FEB3FCFA4E60CE&compId=NCP1117_NCV1117.PDF?ci_sign=1818fbcbfa52a3888835a795c5db236a564e6c07 Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.5÷12V; 1A; DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.2V
Output voltage: 1.5...12V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: NCV1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Application: automotive industry
Input voltage: 1.25...20V
auf Bestellung 1348 Stücke:
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MJF6388G MJF6388G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AB9DA3AC37FE4143&compId=MJF6388G.pdf?ci_sign=9f11d2e25cf27e6333d3ad0676bfd67a7bcab590 Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 10A; 40W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 10A
Power dissipation: 40W
Case: TO220FP
Current gain: 100...15000
Mounting: THT
Kind of package: tube
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LM2575T-3.3G LM2575T-3.3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED68AAB2A8FFD09BE21&compId=LM2575-ON-DTE.PDF?ci_sign=91792adb27eab164ca8ff9fb230c949c2520fd88 Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 3.3VDC; 1A; TO220-5
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 3.3V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
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BZX79C16-T50A ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4C99B02EF3280D8&compId=BZX79C.PDF?ci_sign=c5f9f1ba927e6726aea7f3c3708d21b3e5759106 Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 16V; Ammo Pack; CASE017AG; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: THT
Tolerance: ±5%
Kind of package: Ammo Pack
Case: CASE017AG
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX79C
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NTTFS012N10MDTAG ONSEMI nttfs012n10md-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 217A; 62W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 217A
Power dissipation: 62W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 14.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
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MC74HC377ADTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62BC4697D40D3&compId=MC74HC377A-D.pdf?ci_sign=146271d0ee93da0bec50375ad289faee64499db3 Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS; HC; SMD; TSSOP20; HC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Family: HC
Technology: CMOS
Manufacturer series: HC
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1N5374BG 1N5374BG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6 Category: THT Zener diodes
Description: Diode: Zener; 5W; 75V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Case: CASE017AA
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Leakage current: 0.5µA
Power dissipation: 5W
Tolerance: ±5%
Zener voltage: 75V
Manufacturer series: 1N53xxB
Kind of package: bulk
auf Bestellung 700 Stücke:
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NRVB30H100MFST1G ONSEMI mbr30h100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. load current: 60A
Load current: 30A
Max. forward impulse current: 0.3kA
Semiconductor structure: single diode
Max. off-state voltage: 100V
Type of diode: Schottky rectifying
Max. forward voltage: 0.9V
Application: automotive industry
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NRVB30H100MFST3G ONSEMI mbr30h100mfs-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. load current: 60A
Load current: 30A
Max. forward impulse current: 0.3kA
Semiconductor structure: single diode
Max. off-state voltage: 100V
Type of diode: Schottky rectifying
Max. forward voltage: 0.9V
Application: automotive industry
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NCP698SQ15T1G ONSEMI ncp698-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 150mA; SC70-4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.07V
Output voltage: 1.5V
Output current: 0.15A
Case: SC70-4
Mounting: SMD
Manufacturer series: NCP698
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 6V
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NCP698SQ13T1G ONSEMI ncp698-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.3V; 150mA; SC70-4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 1.3V
Output current: 0.15A
Case: SC70-4
Mounting: SMD
Manufacturer series: NCP698
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 6V
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NCP698SQ18T1G ONSEMI ncp698-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 150mA; SC70-4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.9V
Output voltage: 1.8V
Output current: 0.15A
Case: SC70-4
Mounting: SMD
Manufacturer series: NCP698
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 6V
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NCP698SQ25T1G ONSEMI ncp698-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 150mA; SC70-4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 2.5V
Output current: 0.15A
Case: SC70-4
Mounting: SMD
Manufacturer series: NCP698
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 6V
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NCP698SQ28T1G ONSEMI ncp698-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 150mA; SC70-4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 2.8V
Output current: 0.15A
Case: SC70-4
Mounting: SMD
Manufacturer series: NCP698
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 6V
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NCP698SQ30T1G ONSEMI ncp698-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 150mA; SC70-4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.525V
Output voltage: 3V
Output current: 0.15A
Case: SC70-4
Mounting: SMD
Manufacturer series: NCP698
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 6V
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NCP698SQ33T1G ONSEMI ncp698-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; SC70-4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.525V
Output voltage: 3.3V
Output current: 0.15A
Case: SC70-4
Mounting: SMD
Manufacturer series: NCP698
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 6V
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NCP698SQ35T1G ONSEMI ncp698-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.5V; 150mA; SC70-4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.525V
Output voltage: 3.5V
Output current: 0.15A
Case: SC70-4
Mounting: SMD
Manufacturer series: NCP698
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 6V
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FSV20120V ONSEMI fsv20120v-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 120V; 20A; reel,tape
Mounting: SMD
Max. off-state voltage: 120V
Max. forward voltage: 0.79V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 270A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: TO277
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MMDL301T1G MMDL301T1G ONSEMI mmdl301t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 1.5pF
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MMDL101T1G ONSEMI mmdl101t1-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 7V; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 7V
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Capacitance: 1pF
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MMSZ5252B ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
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MMSZ5252BT1G MMSZ5252BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 4499 Stücke:
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863+0.083 EUR
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SZMMSZ5252BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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MBRS190T3G MBRS190T3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE69CEDE98BC9B6CFA8&compId=MBRS190T3G-DTE.PDF?ci_sign=6de0e8a819e2919bbd902030ef5b7d0049c9bac9 Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.75V
auf Bestellung 1402 Stücke:
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NCP361MUTBG NCP361MUTBG ONSEMI ncp361-d.pdf Category: Drivers - integrated circuits
Description: IC: driver; uDFN6; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V
Type of integrated circuit: driver
Case: uDFN6
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 1.2...20V
Kind of output: transistor
Application: USB
Threshold on-voltage: 3V
auf Bestellung 2995 Stücke:
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NXH450N65L4Q2F2S1G ONSEMI nxh450n65l4q2f2s1g-d.pdf Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 450A; PIM40; SiC
Collector current: 450A
Case: PIM40
Gate-emitter voltage: ±20V
Max. off-state voltage: 650V
Application: for UPS; Inverter
Semiconductor structure: diode/transistor
Technology: SiC
Type of semiconductor module: IGBT
Topology: NTC thermistor; three-level inverter; single-phase
Mechanical mounting: screw
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RHRP3060 RHRP3060 ONSEMI rhrp3060-d.pdf Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 325A; TO220-2; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 325A
Case: TO220-2
Max. forward voltage: 2.1V
Reverse recovery time: 45ns
Power dissipation: 125W
Max. load current: 70A
Features of semiconductor devices: ultrafast switching
Heatsink thickness: max. 1.4mm
Produkt ist nicht verfügbar
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NCP3284AMNTXG ONSEMI ncp3284-d.pdf Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷18V; Uout: 0.8÷5.5V; buck
Type of integrated circuit: PMIC
Input voltage: 4.5...18V
Output voltage: 0.8...5.5V
Output current: 35A
Frequency: 0.5...1MHz
Mounting: SMD
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Produkt ist nicht verfügbar
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FDD86250 fdd86250-d.pdf
FDD86250
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 27A; Idm: 164A; 132W; DPAK
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 27A
Power dissipation: 132W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 164A
auf Bestellung 2407 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.16 EUR
42+1.72 EUR
44+1.63 EUR
250+1.6 EUR
500+1.57 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
NTMFSC012N15MC ntmfsc012n15mc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 80A; Idm: 1067A; 58W; PQFN8
Mounting: SMD
Case: PQFN8
Drain-source voltage: 150V
Drain current: 80A
On-state resistance: 11.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 58W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 32.4nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1067A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBAS16LT1G pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6948ADA88A469&compId=BAS16LT1G.PDF?ci_sign=3b3e1282d94f5f499c543d6dc82ba58136f4a26e
SBAS16LT1G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
auf Bestellung 1819 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
554+0.13 EUR
676+0.11 EUR
758+0.094 EUR
1169+0.061 EUR
1263+0.057 EUR
Mindestbestellmenge: 554
Im Einkaufswagen  Stück im Wert von  UAH
BAS16LT3G pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6948ADA88A469&compId=BAS16LT1G.PDF?ci_sign=3b3e1282d94f5f499c543d6dc82ba58136f4a26e
BAS16LT3G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SBAS16LT3G pVersion=0046&contRep=ZT&docId=005056AB752F1EE584E6948ADA88A469&compId=BAS16LT1G.PDF?ci_sign=3b3e1282d94f5f499c543d6dc82ba58136f4a26e
SBAS16LT3G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ir: 30uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.2A
Reverse recovery time: 6ns
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 30µA
Power dissipation: 0.3W
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQT1N80TF-WS fqt1n80-d.pdf
FQT1N80TF-WS
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 0.12A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.12A
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 20Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 2.1W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQU1N80TU fqu1n80-d.pdf
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 630mA; Idm: 4A; 45W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 0.63A
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 20Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 7.2nC
Power dissipation: 45W
Pulsed drain current: 4A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BD13810STU pVersion=0046&contRep=ZT&docId=005056AB281E1EDCA6F24EF38EAE40CE&compId=BD136_138_140.pdf?ci_sign=110b6f88cafbe0e2a7fcb0c0b1b608b4bf5ae0b0
BD13810STU
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 1.5A; 12.5W; TO126ISO
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1.5A
Power dissipation: 12.5W
Case: TO126ISO
Current gain: 63...160
Mounting: THT
Kind of package: tube
auf Bestellung 1248 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
151+0.48 EUR
167+0.43 EUR
191+0.38 EUR
202+0.35 EUR
480+0.34 EUR
Mindestbestellmenge: 151
Im Einkaufswagen  Stück im Wert von  UAH
CPH3216-TL-E en6405-d.pdf
CPH3216-TL-E
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 1A; 0.9W; CPH3
Power dissipation: 0.9W
Polarisation: bipolar
Kind of package: reel; tape
Mounting: SMD
Case: CPH3
Frequency: 420MHz
Collector-emitter voltage: 50V
Current gain: 200...560
Collector current: 1A
Type of transistor: NPN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SZMMBZ5241BLT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CAA5C0BD20A0D8&compId=MMBZ52xxBLT1G.PDF?ci_sign=e66b6ae8d428f13192cf8029f8987439859092fc
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 11V; SMD; reel,tape; SOT23; single diode; 2uA
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 2µA
Manufacturer series: MMBZ52xxBLT1G
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDC6561AN pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE415E2FED9E28&compId=FDC6561AN.pdf?ci_sign=31da6a276db3534f0b9f0a4f9e8b203a89a1c493
FDC6561AN
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 2.5A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 3.2nC
On-state resistance: 152mΩ
Power dissipation: 0.96W
Drain current: 2.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
auf Bestellung 867 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
93+0.78 EUR
211+0.34 EUR
223+0.32 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
NDC7002N pVersion=0046&contRep=ZT&docId=E20E0CF99AC49DF1A303005056AB0C4F&compId=NDC7002N.pdf?ci_sign=700e2757c62f23933ea86ede021e99436a8a3766
NDC7002N
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 0.51A; 0.96W; SuperSOT-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.51A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3274 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
197+0.36 EUR
217+0.33 EUR
274+0.26 EUR
302+0.24 EUR
521+0.14 EUR
550+0.13 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
FDC5614P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A48AEDAD788F0A50&compId=FDC5614P-DTE.pdf?ci_sign=15f5eeeaa1d3b2143fa6d597203868db13d69957
FDC5614P
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 4291 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
84+0.86 EUR
97+0.74 EUR
108+0.66 EUR
154+0.47 EUR
248+0.29 EUR
262+0.27 EUR
3000+0.26 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
FDC6318P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE1562AE24DE28&compId=FDC6318P.pdf?ci_sign=ae34da262379e255b90d211623f7773f26431455
FDC6318P
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -12V; -2.5A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -2.5A
Gate charge: 8nC
On-state resistance: 0.2Ω
Power dissipation: 0.96W
Gate-source voltage: ±8V
auf Bestellung 2789 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
71+1.02 EUR
94+0.77 EUR
108+0.66 EUR
128+0.56 EUR
135+0.53 EUR
250+0.51 EUR
Mindestbestellmenge: 71
Im Einkaufswagen  Stück im Wert von  UAH
FDC6327C fdc6327c-d.pdf
FDC6327C
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 20/-20V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 2.7/-1.9A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.13/0.27Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
auf Bestellung 1732 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.19 EUR
75+0.96 EUR
100+0.72 EUR
249+0.29 EUR
264+0.27 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
NDC7003P pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DE739DB2174745&compId=NDC7003P.pdf?ci_sign=5c421510fe44da4ad1d95dee73eb77a06ed2bf63
NDC7003P
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -0.34A; 0.96W; SuperSOT-6
Case: SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.34A
Gate charge: 2.2nC
Power dissipation: 0.96W
On-state resistance: 10Ω
Gate-source voltage: ±20V
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
186+0.39 EUR
205+0.35 EUR
257+0.28 EUR
300+0.24 EUR
511+0.14 EUR
544+0.13 EUR
Mindestbestellmenge: 186
Im Einkaufswagen  Stück im Wert von  UAH
NDC7001C pVersion=0046&contRep=ZT&docId=005056AB752F1EE784DE6FBA10696745&compId=NDC7001C.pdf?ci_sign=fafcc44f8fba68da3bbcbe355a6171b7c2c33ffa
NDC7001C
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60/-60V
Drain current: 0.51/-0.34A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 4/10Ω
Mounting: SMD
Gate charge: 1.5/2.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
auf Bestellung 1259 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
153+0.47 EUR
197+0.36 EUR
271+0.26 EUR
286+0.25 EUR
1000+0.24 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
FDC6321C pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE180B16ED3E28&compId=FDC6321C.pdf?ci_sign=0983ccd23aa10f3fa785907e3ddb9524ecfa334b
FDC6321C
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 25/-25V
Drain current: 0.68/-0.46A
Power dissipation: 0.9W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 720/1220mΩ
Mounting: SMD
Gate charge: 2.3/1.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
auf Bestellung 1433 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
99+0.73 EUR
111+0.64 EUR
126+0.57 EUR
197+0.36 EUR
209+0.34 EUR
500+0.33 EUR
Mindestbestellmenge: 99
Im Einkaufswagen  Stück im Wert von  UAH
FDC6333C pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE20DC87FB3E28&compId=FDC6333C.pdf?ci_sign=d9aa1d00b0d0749eb8b25b38b8ba986528b35ddd
FDC6333C
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Type of transistor: N/P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 2.5/-2A
Power dissipation: 0.96W
Case: SuperSOT-6
Gate-source voltage: ±16/±25V
On-state resistance: 150/220mΩ
Mounting: SMD
Gate charge: 6.6/5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Kind of transistor: complementary pair
auf Bestellung 172 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
85+0.84 EUR
96+0.75 EUR
107+0.67 EUR
147+0.49 EUR
172+0.41 EUR
Mindestbestellmenge: 85
Im Einkaufswagen  Stück im Wert von  UAH
FDC658P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE496FB62DBE28&compId=FDC658P.pdf?ci_sign=466ec4213f6486879e0e409ee8e782f401901967
FDC658P
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2759 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
76+0.94 EUR
85+0.85 EUR
154+0.46 EUR
163+0.44 EUR
1000+0.42 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
FDC658AP pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8E3FC6627355EA&compId=FDC658AP.pdf?ci_sign=67e40d1a9236ccbd26c1eaa38a3cf102e25ea8a0
FDC658AP
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±25V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 8.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 3291 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
82+0.87 EUR
111+0.64 EUR
150+0.48 EUR
232+0.31 EUR
246+0.29 EUR
1000+0.28 EUR
Mindestbestellmenge: 82
Im Einkaufswagen  Stück im Wert von  UAH
FDC608PZ pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE0521B6D0BE28&compId=FDC608PZ.pdf?ci_sign=42dea0deed88e4a495dcc7ca0bb8a49350534121
FDC608PZ
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.8A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5.8A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
153+0.47 EUR
184+0.39 EUR
236+0.3 EUR
249+0.29 EUR
1000+0.28 EUR
Mindestbestellmenge: 117
Im Einkaufswagen  Stück im Wert von  UAH
FDC638APZ pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE2EEEB21AFE28&compId=FDC638APZ.pdf?ci_sign=a34f74f506be412f57245585a89a9daaa27d7866
FDC638APZ
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±12V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
88+0.82 EUR
109+0.66 EUR
146+0.49 EUR
286+0.25 EUR
304+0.24 EUR
Mindestbestellmenge: 88
Im Einkaufswagen  Stück im Wert von  UAH
FDC638P pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE325627E07E28&compId=FDC638P.pdf?ci_sign=5f98fbb479d4a0ddac702ff34021f498553e81b2
FDC638P
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1064 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
129+0.56 EUR
154+0.47 EUR
218+0.33 EUR
231+0.31 EUR
Mindestbestellmenge: 112
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FDC610PZ pVersion=0046&contRep=ZT&docId=005056AB752F1ED6BECE095835B0BE28&compId=FDC610PZ.pdf?ci_sign=bc8458006aa7d1578219a992334348fefe69bb64
FDC610PZ
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.9A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Kind of package: reel; tape
Case: SuperSOT-6
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.9A
Gate charge: 13nC
On-state resistance: 75mΩ
Power dissipation: 1.6W
Gate-source voltage: ±25V
Kind of channel: enhancement
auf Bestellung 1062 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
127+0.57 EUR
241+0.3 EUR
254+0.28 EUR
1000+0.27 EUR
Mindestbestellmenge: 105
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NLSX5014MUTAG pVersion=0046&contRep=ZT&docId=005056AB82531ED9A1BA5D91A71E5820&compId=NLSX5014DR2G.pdf?ci_sign=0f8df37a9720c808eba5ee0207031de4a1e6313c
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 4; 0.9÷4.5VDC; SMD; UQFN12; -55÷125°C; reel,tape
Type of integrated circuit: digital
Case: UQFN12
Mounting: SMD
Kind of package: reel; tape
Number of channels: 4
Integrated circuit features: 5V tolerant on inputs/outputs
Kind of integrated circuit: 3-state; logic level voltage translator; non-inverting
Operating temperature: -55...125°C
Number of inputs: 4
Number of outputs: 4
Supply voltage: 0.9...4.5V DC
Frequency: 100MHz
Produkt ist nicht verfügbar
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FGD2736G3-F085V pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94EA63D56B2760CE&compId=FGD2736G3-F085V.PDF?ci_sign=25ca317c294b05d518d3048aa1fb7f7a7f154737
Hersteller: ONSEMI
Category: SMD IGBT transistors
Description: Transistor: IGBT; 360V; 24.3A; 150W; DPAK; Features: logic level
Type of transistor: IGBT
Collector-emitter voltage: 360V
Collector current: 24.3A
Power dissipation: 150W
Case: DPAK
Gate-emitter voltage: ±10V
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Features of semiconductor devices: logic level
Application: ignition systems
Version: ESD
Produkt ist nicht verfügbar
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MMSZ4685T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4CFEB7388A7C0D8&compId=MMSZ4xxxT1G.PDF?ci_sign=a85907a4b31579eb401f684e4c002657dc7dfe7a
MMSZ4685T1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 3.6V; SMD; reel,tape; SOD123; single diode
Manufacturer series: MMSZ4xxT1G
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Leakage current: 7.5µA
Power dissipation: 0.5W
Zener voltage: 3.6V
Tolerance: ±5%
Kind of package: reel; tape
auf Bestellung 1152 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
794+0.09 EUR
1137+0.063 EUR
1152+0.061 EUR
Mindestbestellmenge: 556
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1N5375BG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
1N5375BG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Kind of package: bulk
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N5375BRLG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
1N5375BRLG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 82V; reel,tape; CASE017AA; single diode; 0.5uA
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 82V
Kind of package: reel; tape
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 0.5µA
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
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NTMFS7D5N15MC ntmfs7d5n15mc-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 95.6A; Idm: 478A; 166.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 95.6A
Pulsed drain current: 478A
Power dissipation: 166.7W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 7.9mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NTMFS7D8N10GTWG ntmfs7d8n10g-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 110A; Idm: 1656A; 187W; PQFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 110A
Pulsed drain current: 1656A
Power dissipation: 187W
Case: PQFN8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NCV1117DTARKG pVersion=0046&contRep=ZT&docId=005056AB281E1EDC95FEB3FCFA4E60CE&compId=NCP1117_NCV1117.PDF?ci_sign=1818fbcbfa52a3888835a795c5db236a564e6c07
NCV1117DTARKG
+1
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 1.5÷12V; 1A; DPAK
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 1.2V
Output voltage: 1.5...12V
Output current: 1A
Case: DPAK
Mounting: SMD
Manufacturer series: NCV1117
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Application: automotive industry
Input voltage: 1.25...20V
auf Bestellung 1348 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.43 EUR
80+0.9 EUR
98+0.73 EUR
140+0.51 EUR
148+0.48 EUR
250+0.46 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
MJF6388G pVersion=0046&contRep=ZT&docId=005056AB0ED61ED8AB9DA3AC37FE4143&compId=MJF6388G.pdf?ci_sign=9f11d2e25cf27e6333d3ad0676bfd67a7bcab590
MJF6388G
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 10A; 40W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 10A
Power dissipation: 40W
Case: TO220FP
Current gain: 100...15000
Mounting: THT
Kind of package: tube
auf Bestellung 62 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.22 EUR
27+2.66 EUR
47+1.53 EUR
50+1.44 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
LM2575T-3.3G pVersion=0046&contRep=ZT&docId=005056AB752F1ED68AAB2A8FFD09BE21&compId=LM2575-ON-DTE.PDF?ci_sign=91792adb27eab164ca8ff9fb230c949c2520fd88
LM2575T-3.3G
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 4.75÷40VDC; Uout: 3.3VDC; 1A; TO220-5
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 4.75...40V DC
Output voltage: 3.3V DC
Output current: 1A
Case: TO220-5
Mounting: THT
Frequency: 42...63kHz
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
Kind of package: tube
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.39 EUR
32+2.29 EUR
33+2.19 EUR
34+2.16 EUR
35+2.07 EUR
Mindestbestellmenge: 22
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BZX79C16-T50A pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4C99B02EF3280D8&compId=BZX79C.PDF?ci_sign=c5f9f1ba927e6726aea7f3c3708d21b3e5759106
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 16V; Ammo Pack; CASE017AG; single diode; 0.05uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 16V
Mounting: THT
Tolerance: ±5%
Kind of package: Ammo Pack
Case: CASE017AG
Semiconductor structure: single diode
Leakage current: 50nA
Manufacturer series: BZX79C
Produkt ist nicht verfügbar
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NTTFS012N10MDTAG nttfs012n10md-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 217A; 62W; WDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 217A
Power dissipation: 62W
Case: WDFN8
Gate-source voltage: ±20V
On-state resistance: 14.4mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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MC74HC377ADTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62BC4697D40D3&compId=MC74HC377A-D.pdf?ci_sign=146271d0ee93da0bec50375ad289faee64499db3
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; octal,D flip-flop; Ch: 8; CMOS; HC; SMD; TSSOP20; HC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop; octal
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -55...125°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Family: HC
Technology: CMOS
Manufacturer series: HC
Produkt ist nicht verfügbar
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1N5374BG pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4B706AA2B43C0D8&compId=1N53xx.PDF?ci_sign=2dd0986a0cecc581986dbc6f69ac36c2a8667bd6
1N5374BG
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 75V; bulk; CASE017AA; single diode; 0.5uA; 1N53xxB
Case: CASE017AA
Semiconductor structure: single diode
Mounting: THT
Type of diode: Zener
Leakage current: 0.5µA
Power dissipation: 5W
Tolerance: ±5%
Zener voltage: 75V
Manufacturer series: 1N53xxB
Kind of package: bulk
auf Bestellung 700 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
169+0.42 EUR
315+0.23 EUR
332+0.22 EUR
Mindestbestellmenge: 136
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NRVB30H100MFST1G mbr30h100mfs-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. load current: 60A
Load current: 30A
Max. forward impulse current: 0.3kA
Semiconductor structure: single diode
Max. off-state voltage: 100V
Type of diode: Schottky rectifying
Max. forward voltage: 0.9V
Application: automotive industry
Produkt ist nicht verfügbar
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NRVB30H100MFST3G mbr30h100mfs-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5; SMD; 100V; 30A; reel,tape
Case: DFN5
Mounting: SMD
Kind of package: reel; tape
Max. load current: 60A
Load current: 30A
Max. forward impulse current: 0.3kA
Semiconductor structure: single diode
Max. off-state voltage: 100V
Type of diode: Schottky rectifying
Max. forward voltage: 0.9V
Application: automotive industry
Produkt ist nicht verfügbar
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NCP698SQ15T1G ncp698-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.5V; 150mA; SC70-4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.07V
Output voltage: 1.5V
Output current: 0.15A
Case: SC70-4
Mounting: SMD
Manufacturer series: NCP698
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 6V
Produkt ist nicht verfügbar
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NCP698SQ13T1G ncp698-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.3V; 150mA; SC70-4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.5V
Output voltage: 1.3V
Output current: 0.15A
Case: SC70-4
Mounting: SMD
Manufacturer series: NCP698
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 6V
Produkt ist nicht verfügbar
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NCP698SQ18T1G ncp698-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 150mA; SC70-4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.9V
Output voltage: 1.8V
Output current: 0.15A
Case: SC70-4
Mounting: SMD
Manufacturer series: NCP698
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 6V
Produkt ist nicht verfügbar
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NCP698SQ25T1G ncp698-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.5V; 150mA; SC70-4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 2.5V
Output current: 0.15A
Case: SC70-4
Mounting: SMD
Manufacturer series: NCP698
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 6V
Produkt ist nicht verfügbar
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NCP698SQ28T1G ncp698-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 2.8V; 150mA; SC70-4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.7V
Output voltage: 2.8V
Output current: 0.15A
Case: SC70-4
Mounting: SMD
Manufacturer series: NCP698
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 6V
Produkt ist nicht verfügbar
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NCP698SQ30T1G ncp698-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3V; 150mA; SC70-4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.525V
Output voltage: 3V
Output current: 0.15A
Case: SC70-4
Mounting: SMD
Manufacturer series: NCP698
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 6V
Produkt ist nicht verfügbar
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NCP698SQ33T1G ncp698-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 150mA; SC70-4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.525V
Output voltage: 3.3V
Output current: 0.15A
Case: SC70-4
Mounting: SMD
Manufacturer series: NCP698
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 6V
Produkt ist nicht verfügbar
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NCP698SQ35T1G ncp698-d.pdf
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.5V; 150mA; SC70-4; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.525V
Output voltage: 3.5V
Output current: 0.15A
Case: SC70-4
Mounting: SMD
Manufacturer series: NCP698
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 6V
Produkt ist nicht verfügbar
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FSV20120V fsv20120v-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; TO277; SMD; 120V; 20A; reel,tape
Mounting: SMD
Max. off-state voltage: 120V
Max. forward voltage: 0.79V
Load current: 20A
Semiconductor structure: single diode
Max. forward impulse current: 270A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Case: TO277
Produkt ist nicht verfügbar
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MMDL301T1G mmdl301t1-d.pdf
MMDL301T1G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 30V; reel,tape; 200mW
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 30V
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Power dissipation: 0.2W
Capacitance: 1.5pF
Produkt ist nicht verfügbar
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MMDL101T1G mmdl101t1-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD323; SMD; 7V; reel,tape
Type of diode: Schottky switching
Case: SOD323
Mounting: SMD
Max. off-state voltage: 7V
Semiconductor structure: single diode
Max. forward voltage: 0.6V
Kind of package: reel; tape
Capacitance: 1pF
Produkt ist nicht verfügbar
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MMSZ5252B pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Produkt ist nicht verfügbar
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MMSZ5252BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
MMSZ5252BT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
auf Bestellung 4499 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
583+0.12 EUR
863+0.083 EUR
1220+0.059 EUR
1425+0.05 EUR
2067+0.035 EUR
2263+0.032 EUR
2416+0.03 EUR
2488+0.029 EUR
Mindestbestellmenge: 583
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SZMMSZ5252BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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MBRS190T3G pVersion=0046&contRep=ZT&docId=005056AB752F1EE69CEDE98BC9B6CFA8&compId=MBRS190T3G-DTE.PDF?ci_sign=6de0e8a819e2919bbd902030ef5b7d0049c9bac9
MBRS190T3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 90V; 2A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.75V
auf Bestellung 1402 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
158+0.45 EUR
171+0.42 EUR
207+0.35 EUR
311+0.23 EUR
329+0.22 EUR
1000+0.21 EUR
Mindestbestellmenge: 132
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NCP361MUTBG ncp361-d.pdf
NCP361MUTBG
Hersteller: ONSEMI
Category: Drivers - integrated circuits
Description: IC: driver; uDFN6; Uin: 1.2÷20V; OUT: transistor; Thresh.on-volt: 3V
Type of integrated circuit: driver
Case: uDFN6
Mounting: SMD
Operating temperature: -40...85°C
Input voltage: 1.2...20V
Kind of output: transistor
Application: USB
Threshold on-voltage: 3V
auf Bestellung 2995 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
76+0.94 EUR
87+0.82 EUR
95+0.76 EUR
105+0.69 EUR
Mindestbestellmenge: 76
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NXH450N65L4Q2F2S1G nxh450n65l4q2f2s1g-d.pdf
Hersteller: ONSEMI
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 450A; PIM40; SiC
Collector current: 450A
Case: PIM40
Gate-emitter voltage: ±20V
Max. off-state voltage: 650V
Application: for UPS; Inverter
Semiconductor structure: diode/transistor
Technology: SiC
Type of semiconductor module: IGBT
Topology: NTC thermistor; three-level inverter; single-phase
Mechanical mounting: screw
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RHRP3060 rhrp3060-d.pdf
RHRP3060
Hersteller: ONSEMI
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 325A; TO220-2; 125W
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Kind of package: tube
Max. forward impulse current: 325A
Case: TO220-2
Max. forward voltage: 2.1V
Reverse recovery time: 45ns
Power dissipation: 125W
Max. load current: 70A
Features of semiconductor devices: ultrafast switching
Heatsink thickness: max. 1.4mm
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NCP3284AMNTXG ncp3284-d.pdf
Hersteller: ONSEMI
Category: Voltage regulators - DC/DC circuits
Description: IC: PMIC; Uin: 4.5÷18V; Uout: 0.8÷5.5V; buck
Type of integrated circuit: PMIC
Input voltage: 4.5...18V
Output voltage: 0.8...5.5V
Output current: 35A
Frequency: 0.5...1MHz
Mounting: SMD
Topology: buck
Number of channels: 1
Operating temperature: -40...125°C
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