NSBC123TPDP6T5G onsemi
Hersteller: onsemi
Description: TRANS PREBIAS NPN/PNP 50V SOT963
Packaging: Bulk
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Supplier Device Package: SOT-963
| Anzahl | Privatkunde |
|---|---|
| 3847+ | 0.17 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
10-14 Tag (e)
Mindestmenge:
3847 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details NSBC123TPDP6T5G onsemi
Description: TRANS PREBIAS NPN/PNP 50V SOT963, Packaging: Tape & Reel (TR), Package / Case: SOT-963, Mounting Type: Surface Mount, Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual), Power - Max: 339mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V, Resistor - Base (R1): 2.2kOhms, Supplier Device Package: SOT-963.
Weitere Produktangebote NSBC123TPDP6T5G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
|
|
NSBC123TPDP6T5G | onsemi |
Description: TRANS PREBIAS NPN/PNP 50V SOT963 Packaging: Tape & Reel (TR) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 339mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 2.2kOhms Supplier Device Package: SOT-963 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
NSBC123TPDP6T5G | onsemi |
Digital Transistors SOT-963 COMP NBRT |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4 Stücke Im Einkaufswagen Stück im Wert von UAH |
| NSBC123TPDP6T5G | ONSEMI |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V Mounting: SMD Base resistor: 2.2kΩ Power dissipation: 408mW Polarisation: bipolar Kind of transistor: BRT; complementary pair Type of transistor: NPN / PNP Current gain: 160...350 Kind of package: reel; tape Case: SOT963 Collector current: 0.1A Manufacturer standard package: 3000pcs. Collector-emitter voltage: 50V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NSBC123TPDP6T5G |
|
Hersteller: onsemi
Description: TRANS PREBIAS NPN/PNP 50V SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Supplier Device Package: SOT-963
Description: TRANS PREBIAS NPN/PNP 50V SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 339mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 2.2kOhms
Supplier Device Package: SOT-963
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NSBC123TPDP6T5G |
|
Hersteller: onsemi
Digital Transistors SOT-963 COMP NBRT
Digital Transistors SOT-963 COMP NBRT
Produkt ist nicht verfügbar
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NSBC123TPDP6T5G |
|
Hersteller: ONSEMI
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Base resistor: 2.2kΩ
Power dissipation: 408mW
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Current gain: 160...350
Kind of package: reel; tape
Case: SOT963
Collector current: 0.1A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V
Mounting: SMD
Base resistor: 2.2kΩ
Power dissipation: 408mW
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Type of transistor: NPN / PNP
Current gain: 160...350
Kind of package: reel; tape
Case: SOT963
Collector current: 0.1A
Manufacturer standard package: 3000pcs.
Collector-emitter voltage: 50V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH