SMMUN2113LT1G onsemi
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.056 EUR |
| 6000+ | 0.049 EUR |
| 9000+ | 0.046 EUR |
| 15000+ | 0.043 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SMMUN2113LT1G onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3, Resistors Included: R1 and R2, Qualification: AEC-Q101, Grade: Automotive, Resistor - Emitter Base (R2): 47 kOhms, Resistor - Base (R1): 47 kOhms, Power - Max: 246 mW, Voltage - Collector Emitter Breakdown (Max): 50 V, Current - Collector (Ic) (Max): 100 mA, Part Status: Active, Supplier Device Package: SOT-23-3 (TO-236), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V, Current - Collector Cutoff (Max): 500nA, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Transistor Type: PNP - Pre-Biased, Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote SMMUN2113LT1G nach Preis ab 0.038 EUR bis 0.28 EUR
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SMMUN2113LT1G | ONSEMI |
Category: PNP SMD transistorsDescription: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Application: automotive industry Polarisation: bipolar Kind of transistor: BRT Case: SOT23; TO236AB Type of transistor: PNP Kind of package: reel; tape Mounting: SMD Collector current: 0.1A Power dissipation: 0.246W Collector-emitter voltage: 50V Base-emitter resistor: 47kΩ Base resistor: 47kΩ |
auf Bestellung 2694 Stücke: Lieferzeit 14-21 Tag (e) |
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SMMUN2113LT1G | onsemi |
Digital Transistors SS BR XSTR SPCL TR |
auf Bestellung 24366 Stücke: Lieferzeit 10-14 Tag (e) |
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SMMUN2113LT1G | onsemi |
Description: TRANS PREBIAS PNP 50V SOT23-3Resistors Included: R1 and R2 Qualification: AEC-Q101 Grade: Automotive Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 47 kOhms Power - Max: 246 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 16417 Stücke: Lieferzeit 10-14 Tag (e) |
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| SMMUN2113LT1G |
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auf Bestellung 78000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SMMUN2113LT1G |
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Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT23; TO236AB
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.246W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Application: automotive industry
Polarisation: bipolar
Kind of transistor: BRT
Case: SOT23; TO236AB
Type of transistor: PNP
Kind of package: reel; tape
Mounting: SMD
Collector current: 0.1A
Power dissipation: 0.246W
Collector-emitter voltage: 50V
Base-emitter resistor: 47kΩ
Base resistor: 47kΩ
auf Bestellung 2694 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 500+ | 0.14 EUR |
| 794+ | 0.09 EUR |
| 1279+ | 0.056 EUR |
| 1684+ | 0.042 EUR |
| 1866+ | 0.038 EUR |
| SMMUN2113LT1G |
![]() |
Hersteller: onsemi
Digital Transistors SS BR XSTR SPCL TR
Digital Transistors SS BR XSTR SPCL TR
auf Bestellung 24366 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 0.26 EUR |
| 19+ | 0.15 EUR |
| 100+ | 0.097 EUR |
| 500+ | 0.07 EUR |
| 1000+ | 0.062 EUR |
| 3000+ | 0.049 EUR |
| 6000+ | 0.044 EUR |
| SMMUN2113LT1G |
![]() |
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: TRANS PREBIAS PNP 50V SOT23-3
Resistors Included: R1 and R2
Qualification: AEC-Q101
Grade: Automotive
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Power - Max: 246 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 16417 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 63+ | 0.28 EUR |
| 104+ | 0.17 EUR |
| 166+ | 0.11 EUR |
| 500+ | 0.077 EUR |
| 1000+ | 0.068 EUR |
| SMMUN2113LT1G |
![]() |
auf Bestellung 78000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH


