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NJVMJD45H11RLG

NJVMJD45H11RLG onsemi

mjd44h11-d.pdf Hersteller: onsemi
Description: TRANS PNP 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Qualification: AEC-Q101
auf Bestellung 487 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.41 EUR
12+1.51 EUR
100+1.01 EUR
Mindestbestellmenge: 8
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Technische Details NJVMJD45H11RLG onsemi

Description: TRANS PNP 80V 8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A, Current - Collector Cutoff (Max): 10µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V, Frequency - Transition: 40MHz, Supplier Device Package: DPAK, Part Status: Active, Current - Collector (Ic) (Max): 8 A, Voltage - Collector Emitter Breakdown (Max): 80 V, Power - Max: 1.75 W, Grade: Automotive, Qualification: AEC-Q101.

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NJVMJD45H11RLG Hersteller : ON Semiconductor mjd44h11-d.pdf
auf Bestellung 8190 Stücke:
Lieferzeit 21-28 Tag (e)
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NJVMJD45H11RLG NJVMJD45H11RLG Hersteller : ON Semiconductor 420892567304467mjd44h11-d.pdf Trans GP BJT PNP 80V 8A 1750mW Automotive 3-Pin(2+Tab) DPAK T/R
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Im Einkaufswagen  Stück im Wert von  UAH
NJVMJD45H11RLG NJVMJD45H11RLG Hersteller : onsemi mjd44h11-d.pdf Description: TRANS PNP 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NJVMJD45H11RLG Hersteller : onsemi mjd44h11-d.pdf Bipolar Transistors - BJT BIP PNP 8A 80V TR
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Im Einkaufswagen  Stück im Wert von  UAH