
NVTFS024N06CTAG onsemi

Description: MOSFET N-CH 60V 7A/24A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 28500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
1500+ | 0.7 EUR |
3000+ | 0.62 EUR |
4500+ | 0.61 EUR |
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Technische Details NVTFS024N06CTAG onsemi
Description: MOSFET N-CH 60V 7A/24A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 24A (Tc), Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V, Power Dissipation (Max): 2.5W (Ta), 28W (Tc), Vgs(th) (Max) @ Id: 4V @ 20µA, Supplier Device Package: 8-WDFN (3.3x3.3), Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V, Qualification: AEC-Q101.
Weitere Produktangebote NVTFS024N06CTAG nach Preis ab 0.55 EUR bis 2.43 EUR
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NVTFS024N06CTAG | Hersteller : ON Semiconductor |
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auf Bestellung 150000 Stücke: Lieferzeit 14-21 Tag (e) |
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NVTFS024N06CTAG | Hersteller : onsemi |
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auf Bestellung 1497 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS024N06CTAG | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 24A (Tc) Rds On (Max) @ Id, Vgs: 22.6mOhm @ 3A, 10V Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 29990 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS024N06CTAG | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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NVTFS024N06CTAG | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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NVTFS024N06CTAG | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 112A; 14W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 24A Pulsed drain current: 112A Power dissipation: 14W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 22.6mΩ Mounting: SMD Gate charge: 5.7nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NVTFS024N06CTAG | Hersteller : ONSEMI |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 24A; Idm: 112A; 14W; WDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 24A Pulsed drain current: 112A Power dissipation: 14W Case: WDFN8 Gate-source voltage: ±20V On-state resistance: 22.6mΩ Mounting: SMD Gate charge: 5.7nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |