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FDBL0110N60 ONSEMI fdbl0110n60-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 170nC
Produkt ist nicht verfügbar
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BC858CLT1G BC858CLT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Frequency: 100MHz
Current gain: 420...800
Kind of package: reel; tape
auf Bestellung 2330 Stücke:
Lieferzeit 14-21 Tag (e)
593+0.12 EUR
848+0.084 EUR
1250+0.057 EUR
1493+0.048 EUR
2174+0.033 EUR
2330+0.03 EUR
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BC858BLT3G BC858BLT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
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MRA4007T3G MRA4007T3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7EC99F014E1DE27&compId=MRA4006T3G-DTE.PDF?ci_sign=07e05b91c4facf205775ca0b12034b0218906c4f Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.18V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: SMA
Max. forward voltage: 1.18V
Max. load current: 30A
auf Bestellung 1289 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
379+0.19 EUR
508+0.14 EUR
576+0.12 EUR
1003+0.071 EUR
1060+0.067 EUR
Mindestbestellmenge: 264
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NRVA4007T3G NRVA4007T3G ONSEMI mra4003t3-d.pdf Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1A; SMA; Ufmax: 1.18V; Ifsm: 30A
Mounting: SMD
Case: SMA
Max. off-state voltage: 1kV
Max. load current: 2A
Max. forward voltage: 1.18V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Application: automotive industry
Kind of package: reel; tape
Type of diode: rectifying
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FDBL0210N80 ONSEMI fdbl0210n80-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 130nC
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FDB0170N607L ONSEMI fdb0170n607l-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7
Gate charge: 173nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1620A
Mounting: SMD
Case: D2PAK-7
Drain-source voltage: 60V
Drain current: 300A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: reel; tape
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KSD560YTU KSD560YTU ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBCB12CE150C8469&compId=KSD560YTU.pdf?ci_sign=cc78553356d548bcbe6c0001713524f2383d56b7 Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 1.5W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 1.5W
Case: TO220AB
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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NCV8406ASTT1G NCV8406ASTT1G ONSEMI ncv8406-d.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Output current: 7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.46Ω
Kind of package: reel; tape
Supply voltage: 60V DC
Application: automotive industry
Kind of integrated circuit: low-side
auf Bestellung 973 Stücke:
Lieferzeit 14-21 Tag (e)
47+1.53 EUR
57+1.27 EUR
69+1.04 EUR
73+0.99 EUR
100+0.94 EUR
Mindestbestellmenge: 47
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74LCX08M 74LCX08M ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8D0B26527215EA&compId=74LCX08M.pdf?ci_sign=645d0b8b072418962d2c6aab6a2e0598ec130d59 Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCX
Quiescent current: 10µA
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74LCX08MTCX 74LCX08MTCX ONSEMI ONSM-S-A0003514493-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Quiescent current: 10µA
auf Bestellung 1447 Stücke:
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114+0.63 EUR
140+0.51 EUR
158+0.45 EUR
183+0.39 EUR
243+0.29 EUR
258+0.28 EUR
Mindestbestellmenge: 114
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74LCX08MX 74LCX08MX ONSEMI ONSM-S-A0003514493-1.pdf?t.download=true&u=5oefqw Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; LCX
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Produkt ist nicht verfügbar
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NTBG040N120M3S ONSEMI NTBG040N120M3S-D.PDF Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 40A
Pulsed drain current: 149A
Power dissipation: 131W
Case: D2PAK-7
Gate-source voltage: -10...22V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
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MJF122G MJF122G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD12C3D86D24469&compId=MJF122G.PDF?ci_sign=eeb27cb58bb5a19c4bd0b9ba8dbdb7391c3bb937 Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 2W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Case: TO220FP
Mounting: THT
Power dissipation: 2W
Kind of transistor: Darlington
Kind of package: tube
auf Bestellung 32 Stücke:
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32+2.23 EUR
Mindestbestellmenge: 32
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NCV33035DWR2G ONSEMI mc33035-d.pdf Category: Motor and PWM drivers
Description: IC: driver; brushless motor controller; SO24; Ch: 3; Usup: 0÷40VDC
Supply voltage: 0...40V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Mounting: SMD
Case: SO24
Number of channels: 3
Operating voltage: 10...30V DC
Application: automotive industry
Kind of integrated circuit: brushless motor controller
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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FDD18N20LZ ONSEMI fdd18n20lz-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 89W; DPAK3
Case: DPAK3
Mounting: SMD
On-state resistance: 0.125Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 89W
Pulsed drain current: 64A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 30nC
Produkt ist nicht verfügbar
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NSR05F20NXT5G ONSEMI nsr05f20-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0402; SMD; 20V; 0.5A; reel,tape
Semiconductor structure: single diode
Type of diode: Schottky switching
Max. forward voltage: 0.43V
Load current: 0.5A
Max. forward impulse current: 1A
Kind of package: reel; tape
Max. off-state voltage: 20V
Mounting: SMD
Case: 0402
Produkt ist nicht verfügbar
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74AC245MTC 74AC245MTC ONSEMI 74ACT245-D.pdf description Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; AC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: AC
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74AC245MTCX 74AC245MTCX ONSEMI 74ACT245-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; AC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: AC
Produkt ist nicht verfügbar
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74AC245SCX 74AC245SCX ONSEMI 74ACT245-D.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: AC
Produkt ist nicht verfügbar
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MC74AC245DTR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6286E54C6A0D3&compId=MC74AC245-D.pdf?ci_sign=c7ddd3b6a12d60351565f9ffe180d90e92f3fd47 Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bidirectional,octal,transceiver; Ch: 8; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; octal; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Family: AC
Kind of package: reel; tape
Manufacturer series: AC
Produkt ist nicht verfügbar
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FST3245MTCX FST3245MTCX ONSEMI fst3245-d.pdf Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,bus switch; CMOS,TTL; SMD; TSSOP20; 4÷5.5VDC
Mounting: SMD
Operating temperature: -40...85°C
Case: TSSOP20
Kind of package: reel; tape
Quiescent current: 3µA
Supply voltage: 4...5.5V DC
Kind of integrated circuit: 8bit; bus switch
Type of integrated circuit: digital
Technology: CMOS; TTL
Produkt ist nicht verfügbar
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MC33178DR2G MC33178DR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58F84C297B7BE4469&compId=MC33178DG.PDF?ci_sign=b020d8e9238dc35a9d15e62d87119eb40d09758d Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 2; SO8; ±2÷18VDC,4÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 5MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 2V/μs
Operating temperature: -40...85°C
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Kind of package: reel; tape
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MPSA14G MPSA14G ONSEMI mpsa13-d.pdf Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; 30V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Produkt ist nicht verfügbar
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SI4435DY SI4435DY ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE784EFDF97877B8745&compId=SI4435DY.pdf?ci_sign=2dd861dc7908fb1b7a5ceb72263e5d2fccba210c Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8
Mounting: SMD
Kind of channel: enhancement
Technology: PowerTrench®
Case: SO8
Type of transistor: P-MOSFET
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -8.8A
Gate charge: 24nC
On-state resistance: 35mΩ
Power dissipation: 2.5W
Gate-source voltage: ±20V
Polarisation: unipolar
auf Bestellung 1782 Stücke:
Lieferzeit 14-21 Tag (e)
45+1.62 EUR
67+1.08 EUR
100+0.72 EUR
106+0.68 EUR
500+0.65 EUR
Mindestbestellmenge: 45
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NRVBB20100CTT4G ONSEMI mbrb20100ct-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Kind of package: reel; tape
Max. load current: 20A
Max. forward voltage: 0.95V
Max. forward impulse current: 150A
Application: automotive industry
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NRVBBS20100CTT4G ONSEMI mbrb20100ct-d.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Kind of package: reel; tape
Max. load current: 20A
Max. forward voltage: 0.95V
Max. forward impulse current: 150A
Application: automotive industry
Produkt ist nicht verfügbar
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MMSZ5236BT1G MMSZ5236BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
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SZMMSZ5236BT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
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FDMS86252 ONSEMI fdms86252-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 69W; PQFN8
Drain-source voltage: 150V
Drain current: 16A
On-state resistance: 96mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PQFN8
Produkt ist nicht verfügbar
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NTD2955T4G ONSEMI ntd2955-d.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 15nC
Pulsed drain current: -18A
auf Bestellung 1201 Stücke:
Lieferzeit 14-21 Tag (e)
67+1.07 EUR
84+0.86 EUR
93+0.78 EUR
152+0.47 EUR
161+0.45 EUR
Mindestbestellmenge: 67
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NSIC2020JBT3G NSIC2020JBT3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE78689F9E88DE74745&compId=NSIC2020JB.PDF?ci_sign=bc8846fe9383898ec3fbd268e5a6b8e7347f36eb Category: LED drivers
Description: IC: driver; current regulator,LED driver; SMB; 120VDC; 3W; 20mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SMB
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 120V DC
Power dissipation: 3W
Operating current: 20mA
Produkt ist nicht verfügbar
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MMBF5457 ONSEMI 2N5457-59%2C%20MMBF5457-59.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 3mA; 0.35W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 3mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
auf Bestellung 2965 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
300+0.24 EUR
388+0.18 EUR
410+0.17 EUR
Mindestbestellmenge: 264
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MMBF5485 ONSEMI mmbf5486-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 4mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 4mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
auf Bestellung 2965 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
459+0.16 EUR
491+0.15 EUR
589+0.12 EUR
625+0.11 EUR
Mindestbestellmenge: 417
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MMBF5486 ONSEMI mmbf5486-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 8mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 8mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Produkt ist nicht verfügbar
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MMBF5484 ONSEMI mmbf5486-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 1mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 1mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
auf Bestellung 2935 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
468+0.15 EUR
500+0.14 EUR
603+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 417
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MCH3914-7-TL-H ONSEMI ena1511-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.3W; MCPH3; Igt: 5mA
Kind of package: reel; tape
Mounting: SMD
Case: MCPH3
Type of transistor: N-JFET
Polarisation: unipolar
Gate-source voltage: -15V
Gate current: 5mA
Drain current: 16mA
Power dissipation: 0.3W
Drain-source voltage: 15V
Produkt ist nicht verfügbar
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MCH3914-8-TL-H ONSEMI ena1511-d.pdf Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 25mA; 0.3W; MCPH3; Igt: 5mA
Kind of package: reel; tape
Mounting: SMD
Case: MCPH3
Type of transistor: N-JFET
Polarisation: unipolar
Gate-source voltage: -15V
Gate current: 5mA
Drain current: 25mA
Power dissipation: 0.3W
Drain-source voltage: 15V
Produkt ist nicht verfügbar
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IRFM120ATF ONSEMI irfm120a-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.3A; Idm: 18A; 2.4W; SOT223
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Gate charge: 16nC
On-state resistance: 0.2Ω
Drain current: 2.3A
Power dissipation: 2.4W
Pulsed drain current: 18A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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NTB110N65S3HF ONSEMI ntb110n65s3hf-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
Produkt ist nicht verfügbar
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MC74AC374DTR2G MC74AC374DTR2G ONSEMI mc74ac374-d.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; TSSOP20; reel,tape; 80uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Kind of output: 3-state
Quiescent current: 80µA
Trigger: positive-edge-triggered
Produkt ist nicht verfügbar
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MC74AC374DWG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62916AC7E00D3&compId=MC74AC374-D.pdf?ci_sign=dff498381ab06969f303dc939acc578520c87ac3 Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: tube
Family: AC
Kind of output: 3-state
Manufacturer series: AC
Produkt ist nicht verfügbar
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MC74AC374DWR2G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62916AC7F40D3&compId=MC74AC374-D.pdf?ci_sign=55813d6fd24682016e7ddd324ceda4570df0a584 Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Family: AC
Kind of output: 3-state
Manufacturer series: AC
Produkt ist nicht verfügbar
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MC33275ST-3.3T3G MC33275ST-3.3T3G ONSEMI mc33275-d.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.1V
Output voltage: 3.3V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Manufacturer series: MC33275
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 0...20V
auf Bestellung 3096 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
152+0.47 EUR
167+0.43 EUR
196+0.37 EUR
207+0.35 EUR
500+0.33 EUR
Mindestbestellmenge: 129
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NCP115ASN180T1G NCP115ASN180T1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94B7DE3BE78FE0CE&compId=NCP115.PDF?ci_sign=763e3006efd4b8e41c750fe3f43656b468b01d32 Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 0.3A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP115
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.7...5.5V
auf Bestellung 314 Stücke:
Lieferzeit 14-21 Tag (e)
167+0.43 EUR
234+0.31 EUR
314+0.23 EUR
Mindestbestellmenge: 167
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74LVTH162244MTD ONSEMI FAIRS34870-1.pdf?t.download=true&u=5oefqw Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; tube
Mounting: SMD
Kind of package: tube
Case: TSSOP48
Type of integrated circuit: digital
Number of channels: 16
Kind of output: 3-state
Kind of integrated circuit: buffer; line driver; non-inverting
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Produkt ist nicht verfügbar
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NTB150N65S3HF ONSEMI ntb150n65s3hf-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 192W; D2PAK
Type of transistor: N-MOSFET
Power dissipation: 192W
Case: D2PAK
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
On-state resistance: 0.15Ω
Drain current: 24A
Gate-source voltage: ±30V
Pulsed drain current: 60A
Drain-source voltage: 650V
Kind of channel: enhancement
Polarisation: unipolar
Produkt ist nicht verfügbar
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NTD250N65S3H ONSEMI ntd250n65s3h-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 36A; 106W; DPAK
Type of transistor: N-MOSFET
Power dissipation: 106W
Case: DPAK
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
On-state resistance: 0.25Ω
Drain current: 13A
Gate-source voltage: ±30V
Pulsed drain current: 36A
Drain-source voltage: 650V
Kind of channel: enhancement
Polarisation: unipolar
Produkt ist nicht verfügbar
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FCMT250N65S3 ONSEMI fcmt250n65s3-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; PQFN4
Type of transistor: N-MOSFET
Power dissipation: 90W
Case: PQFN4
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 30A
Drain-source voltage: 650V
Drain current: 12A
On-state resistance: 0.25Ω
Produkt ist nicht verfügbar
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MBRS3200T3G MBRS3200T3G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE69CEDFC55B2782FA8&compId=MBRS3200T3G-DTE.PDF?ci_sign=4f2f6745ea73fa4d8e67a0f9f1783e5824d0d12e Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.59V
auf Bestellung 639 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.7 EUR
126+0.57 EUR
137+0.52 EUR
168+0.43 EUR
243+0.29 EUR
257+0.28 EUR
Mindestbestellmenge: 103
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FDD86367-F085 ONSEMI fdd86367_f085-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK3
On-state resistance: 4.2mΩ
Case: DPAK3
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 227W
Gate charge: 68nC
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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MMBZ15VALT1G MMBZ15VALT1G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEDED6F98B88AA14&compId=MMBZ_ser.PDF?ci_sign=1f35ddf42140d92ef46c86e862bfcafdd39158da Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; SOT23; ±5%
Mounting: SMD
Max. off-state voltage: 12V
Semiconductor structure: common anode; double
Max. forward impulse current: 1.9A
Breakdown voltage: 15V
Leakage current: 50nA
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 40W
Case: SOT23
Tolerance: ±5%
auf Bestellung 3917 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
589+0.12 EUR
691+0.1 EUR
794+0.09 EUR
863+0.083 EUR
920+0.078 EUR
1132+0.063 EUR
1684+0.042 EUR
1780+0.04 EUR
Mindestbestellmenge: 500
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FQA13N80-F109 FQA13N80-F109 ONSEMI fqa13n80_f109-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 50.4A; 300W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 300W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 50.4A
Gate charge: 88nC
Produkt ist nicht verfügbar
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NTBG040N120SC1 ONSEMI ntbg040n120sc1-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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MBRF20L60CTG ONSEMI mbr20l60ct-d.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.69V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.69V
Max. forward impulse current: 0.24kA
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
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TIP36CG TIP36CG ONSEMI tip35a-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 25A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
16+4.75 EUR
17+4.28 EUR
30+2.39 EUR
Mindestbestellmenge: 16
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TIP36AG ONSEMI tip35a-d.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 25A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
18+4.16 EUR
25+2.89 EUR
27+2.73 EUR
30+2.63 EUR
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NTD280N60S5Z ONSEMI ntd280n60s5z-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 39A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 17.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NCP1392DDR2G NCP1392DDR2G ONSEMI ncp1392-d.pdf Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO8; -1A÷500mA; 8÷17.5VDC; 600V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Case: SO8
Output current: -1...0.5A
Supply voltage: 8...17.5V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 40ns
Pulse fall time: 20ns
Voltage class: 600V
Produkt ist nicht verfügbar
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ESD7C3.3DT5G ESD7C3.3DT5G ONSEMI esd7c3.3d-d.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 0.24W; double,common anode; SOT723; ESD
Type of diode: TVS array
Breakdown voltage: 5V
Peak pulse power dissipation: 0.24W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 12...13pF
Version: ESD
auf Bestellung 5704 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
319+0.22 EUR
421+0.17 EUR
550+0.13 EUR
582+0.12 EUR
Mindestbestellmenge: 162
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FDBL0110N60 fdbl0110n60-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; 429W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 300A
Power dissipation: 429W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 1.1mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 170nC
Produkt ist nicht verfügbar
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BC858CLT1G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d
BC858CLT1G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Mounting: SMD
Frequency: 100MHz
Current gain: 420...800
Kind of package: reel; tape
auf Bestellung 2330 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
593+0.12 EUR
848+0.084 EUR
1250+0.057 EUR
1493+0.048 EUR
2174+0.033 EUR
2330+0.03 EUR
Mindestbestellmenge: 593
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BC858BLT3G pVersion=0046&contRep=ZT&docId=005056AB90B41EDC85C057A8663BC0C7&compId=BC856_7_8.PDF?ci_sign=5e456257fb0e5eb3839ac0160fed3fc2af309c4d
BC858BLT3G
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 220...475
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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MRA4007T3G pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A7EC99F014E1DE27&compId=MRA4006T3G-DTE.PDF?ci_sign=07e05b91c4facf205775ca0b12034b0218906c4f
MRA4007T3G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; SMA; Ufmax: 1.18V; reel,tape
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: reel; tape
Case: SMA
Max. forward voltage: 1.18V
Max. load current: 30A
auf Bestellung 1289 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
379+0.19 EUR
508+0.14 EUR
576+0.12 EUR
1003+0.071 EUR
1060+0.067 EUR
Mindestbestellmenge: 264
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NRVA4007T3G mra4003t3-d.pdf
NRVA4007T3G
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1000V; 1A; SMA; Ufmax: 1.18V; Ifsm: 30A
Mounting: SMD
Case: SMA
Max. off-state voltage: 1kV
Max. load current: 2A
Max. forward voltage: 1.18V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Application: automotive industry
Kind of package: reel; tape
Type of diode: rectifying
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FDBL0210N80 fdbl0210n80-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 240A; 357W; H-PSOF8L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 240A
Power dissipation: 357W
Case: H-PSOF8L
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 130nC
Produkt ist nicht verfügbar
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FDB0170N607L fdb0170n607l-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 300A; Idm: 1620A; 250W; D2PAK-7
Gate charge: 173nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 1620A
Mounting: SMD
Case: D2PAK-7
Drain-source voltage: 60V
Drain current: 300A
On-state resistance: 1.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
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KSD560YTU pVersion=0046&contRep=ZT&docId=005056AB752F1EE4BBCB12CE150C8469&compId=KSD560YTU.pdf?ci_sign=cc78553356d548bcbe6c0001713524f2383d56b7
KSD560YTU
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 1.5W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 5A
Power dissipation: 1.5W
Case: TO220AB
Mounting: THT
Kind of package: tube
Produkt ist nicht verfügbar
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NCV8406ASTT1G ncv8406-d.pdf
NCV8406ASTT1G
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 7A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Output current: 7A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.46Ω
Kind of package: reel; tape
Supply voltage: 60V DC
Application: automotive industry
Kind of integrated circuit: low-side
auf Bestellung 973 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
47+1.53 EUR
57+1.27 EUR
69+1.04 EUR
73+0.99 EUR
100+0.94 EUR
Mindestbestellmenge: 47
Im Einkaufswagen  Stück im Wert von  UAH
74LCX08M pVersion=0046&contRep=ZT&docId=005056AB752F1ED49F8D0B26527215EA&compId=74LCX08M.pdf?ci_sign=645d0b8b072418962d2c6aab6a2e0598ec130d59
74LCX08M
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: LCX
Quiescent current: 10µA
Produkt ist nicht verfügbar
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74LCX08MTCX ONSM-S-A0003514493-1.pdf?t.download=true&u=5oefqw
74LCX08MTCX
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; TSSOP14; 2÷3.6VDC; -40÷85°C; 10uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Quiescent current: 10µA
auf Bestellung 1447 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
140+0.51 EUR
158+0.45 EUR
183+0.39 EUR
243+0.29 EUR
258+0.28 EUR
Mindestbestellmenge: 114
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74LCX08MX ONSM-S-A0003514493-1.pdf?t.download=true&u=5oefqw
74LCX08MX
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; LCX
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: SO14
Supply voltage: 2...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: LCX
Produkt ist nicht verfügbar
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NTBG040N120M3S NTBG040N120M3S-D.PDF
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 40A; Idm: 149A; 131W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 40A
Pulsed drain current: 149A
Power dissipation: 131W
Case: D2PAK-7
Gate-source voltage: -10...22V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MJF122G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD12C3D86D24469&compId=MJF122G.PDF?ci_sign=eeb27cb58bb5a19c4bd0b9ba8dbdb7391c3bb937
MJF122G
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 2W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 5A
Case: TO220FP
Mounting: THT
Power dissipation: 2W
Kind of transistor: Darlington
Kind of package: tube
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.23 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
NCV33035DWR2G mc33035-d.pdf
Hersteller: ONSEMI
Category: Motor and PWM drivers
Description: IC: driver; brushless motor controller; SO24; Ch: 3; Usup: 0÷40VDC
Supply voltage: 0...40V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Mounting: SMD
Case: SO24
Number of channels: 3
Operating voltage: 10...30V DC
Application: automotive industry
Kind of integrated circuit: brushless motor controller
Type of integrated circuit: driver
Produkt ist nicht verfügbar
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FDD18N20LZ fdd18n20lz-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 16A; Idm: 64A; 89W; DPAK3
Case: DPAK3
Mounting: SMD
On-state resistance: 0.125Ω
Drain current: 16A
Gate-source voltage: ±20V
Power dissipation: 89W
Pulsed drain current: 64A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 30nC
Produkt ist nicht verfügbar
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NSR05F20NXT5G nsr05f20-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky switching; 0402; SMD; 20V; 0.5A; reel,tape
Semiconductor structure: single diode
Type of diode: Schottky switching
Max. forward voltage: 0.43V
Load current: 0.5A
Max. forward impulse current: 1A
Kind of package: reel; tape
Max. off-state voltage: 20V
Mounting: SMD
Case: 0402
Produkt ist nicht verfügbar
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74AC245MTC description 74ACT245-D.pdf
74AC245MTC
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; AC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: AC
Produkt ist nicht verfügbar
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74AC245MTCX 74ACT245-D.pdf
74AC245MTCX
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; TSSOP20; AC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: AC
Produkt ist nicht verfügbar
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74AC245SCX 74ACT245-D.pdf
74AC245SCX
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; bidirectional,transceiver; Ch: 8; SMD; SO20; AC; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: bidirectional; transceiver
Number of channels: 8
Mounting: SMD
Case: SO20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Manufacturer series: AC
Produkt ist nicht verfügbar
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MC74AC245DTR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E6286E54C6A0D3&compId=MC74AC245-D.pdf?ci_sign=c7ddd3b6a12d60351565f9ffe180d90e92f3fd47
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,bidirectional,octal,transceiver; Ch: 8; CMOS
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; octal; transceiver
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Kind of output: 3-state
Supply voltage: 2...6V DC
Family: AC
Kind of package: reel; tape
Manufacturer series: AC
Produkt ist nicht verfügbar
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FST3245MTCX fst3245-d.pdf
FST3245MTCX
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,bus switch; CMOS,TTL; SMD; TSSOP20; 4÷5.5VDC
Mounting: SMD
Operating temperature: -40...85°C
Case: TSSOP20
Kind of package: reel; tape
Quiescent current: 3µA
Supply voltage: 4...5.5V DC
Kind of integrated circuit: 8bit; bus switch
Type of integrated circuit: digital
Technology: CMOS; TTL
Produkt ist nicht verfügbar
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MC33178DR2G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58F84C297B7BE4469&compId=MC33178DG.PDF?ci_sign=b020d8e9238dc35a9d15e62d87119eb40d09758d
MC33178DR2G
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5MHz; Ch: 2; SO8; ±2÷18VDC,4÷36VDC
Type of integrated circuit: operational amplifier
Bandwidth: 5MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 2V/μs
Operating temperature: -40...85°C
Input offset voltage: 4mV
Voltage supply range: ± 2...18V DC; 4...36V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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MPSA14G mpsa13-d.pdf
MPSA14G
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; 30V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Produkt ist nicht verfügbar
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SI4435DY pVersion=0046&contRep=ZT&docId=005056AB752F1EE784EFDF97877B8745&compId=SI4435DY.pdf?ci_sign=2dd861dc7908fb1b7a5ceb72263e5d2fccba210c
SI4435DY
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8.8A; 2.5W; SO8
Mounting: SMD
Kind of channel: enhancement
Technology: PowerTrench®
Case: SO8
Type of transistor: P-MOSFET
Kind of package: reel; tape
Drain-source voltage: -30V
Drain current: -8.8A
Gate charge: 24nC
On-state resistance: 35mΩ
Power dissipation: 2.5W
Gate-source voltage: ±20V
Polarisation: unipolar
auf Bestellung 1782 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
45+1.62 EUR
67+1.08 EUR
100+0.72 EUR
106+0.68 EUR
500+0.65 EUR
Mindestbestellmenge: 45
Im Einkaufswagen  Stück im Wert von  UAH
NRVBB20100CTT4G mbrb20100ct-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Kind of package: reel; tape
Max. load current: 20A
Max. forward voltage: 0.95V
Max. forward impulse current: 150A
Application: automotive industry
Produkt ist nicht verfügbar
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NRVBBS20100CTT4G mbrb20100ct-d.pdf
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SMD; 100V; 10Ax2; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK
Kind of package: reel; tape
Max. load current: 20A
Max. forward voltage: 0.95V
Max. forward impulse current: 150A
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MMSZ5236BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
MMSZ5236BT1G
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Produkt ist nicht verfügbar
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SZMMSZ5236BT1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDFB4D04381F20DC0D8&compId=MMSZ52xxT1G.PDF?ci_sign=fdb8f3e427e766b88a37e5251c191ddf82ded01f
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 7.5V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Manufacturer series: MMSZ52xxB
Application: automotive industry
Produkt ist nicht verfügbar
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FDMS86252 fdms86252-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 69W; PQFN8
Drain-source voltage: 150V
Drain current: 16A
On-state resistance: 96mΩ
Type of transistor: N-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Mounting: SMD
Case: PQFN8
Produkt ist nicht verfügbar
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NTD2955T4G ntd2955-d.pdf
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -12A; Idm: -18A; 55W; DPAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -12A
Power dissipation: 55W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 15nC
Pulsed drain current: -18A
auf Bestellung 1201 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
84+0.86 EUR
93+0.78 EUR
152+0.47 EUR
161+0.45 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
NSIC2020JBT3G pVersion=0046&contRep=ZT&docId=005056AB752F1EE78689F9E88DE74745&compId=NSIC2020JB.PDF?ci_sign=bc8846fe9383898ec3fbd268e5a6b8e7347f36eb
NSIC2020JBT3G
Hersteller: ONSEMI
Category: LED drivers
Description: IC: driver; current regulator,LED driver; SMB; 120VDC; 3W; 20mA
Type of integrated circuit: driver
Kind of integrated circuit: current regulator; LED driver
Case: SMB
Mounting: SMD
Operating temperature: -55...150°C
Operating voltage: 120V DC
Power dissipation: 3W
Operating current: 20mA
Produkt ist nicht verfügbar
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MMBF5457 2N5457-59%2C%20MMBF5457-59.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 3mA; 0.35W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 3mA
Power dissipation: 0.35W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
auf Bestellung 2965 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
264+0.27 EUR
300+0.24 EUR
388+0.18 EUR
410+0.17 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
MMBF5485 mmbf5486-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 4mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 4mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
auf Bestellung 2965 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
459+0.16 EUR
491+0.15 EUR
589+0.12 EUR
625+0.11 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
MMBF5486 mmbf5486-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 8mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 8mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
Produkt ist nicht verfügbar
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MMBF5484 mmbf5486-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 1mA; 0.225W; SOT23; Igt: 10mA
Type of transistor: N-JFET
Polarisation: unipolar
Drain current: 1mA
Power dissipation: 0.225W
Case: SOT23
Gate-source voltage: -25V
Mounting: SMD
Kind of package: reel; tape
Gate current: 10mA
auf Bestellung 2935 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
468+0.15 EUR
500+0.14 EUR
603+0.12 EUR
642+0.11 EUR
Mindestbestellmenge: 417
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MCH3914-7-TL-H ena1511-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 16mA; 0.3W; MCPH3; Igt: 5mA
Kind of package: reel; tape
Mounting: SMD
Case: MCPH3
Type of transistor: N-JFET
Polarisation: unipolar
Gate-source voltage: -15V
Gate current: 5mA
Drain current: 16mA
Power dissipation: 0.3W
Drain-source voltage: 15V
Produkt ist nicht verfügbar
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MCH3914-8-TL-H ena1511-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-JFET; unipolar; 15V; 25mA; 0.3W; MCPH3; Igt: 5mA
Kind of package: reel; tape
Mounting: SMD
Case: MCPH3
Type of transistor: N-JFET
Polarisation: unipolar
Gate-source voltage: -15V
Gate current: 5mA
Drain current: 25mA
Power dissipation: 0.3W
Drain-source voltage: 15V
Produkt ist nicht verfügbar
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IRFM120ATF irfm120a-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.3A; Idm: 18A; 2.4W; SOT223
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Gate charge: 16nC
On-state resistance: 0.2Ω
Drain current: 2.3A
Power dissipation: 2.4W
Pulsed drain current: 18A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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NTB110N65S3HF ntb110n65s3hf-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 69A; 240W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Power dissipation: 240W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.11Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 62nC
Produkt ist nicht verfügbar
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MC74AC374DTR2G mc74ac374-d.pdf
MC74AC374DTR2G
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; TSSOP20; reel,tape; 80uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Kind of output: 3-state
Quiescent current: 80µA
Trigger: positive-edge-triggered
Produkt ist nicht verfügbar
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MC74AC374DWG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62916AC7E00D3&compId=MC74AC374-D.pdf?ci_sign=dff498381ab06969f303dc939acc578520c87ac3
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: tube
Family: AC
Kind of output: 3-state
Manufacturer series: AC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MC74AC374DWR2G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA4E62916AC7F40D3&compId=MC74AC374-D.pdf?ci_sign=55813d6fd24682016e7ddd324ceda4570df0a584
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS
Mounting: SMD
Case: SOIC20
Operating temperature: -40...85°C
Supply voltage: 2...6V DC
Kind of package: reel; tape
Family: AC
Kind of output: 3-state
Manufacturer series: AC
Produkt ist nicht verfügbar
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MC33275ST-3.3T3G mc33275-d.pdf
MC33275ST-3.3T3G
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 3.3V; 0.8A; SOT223; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 1.1V
Output voltage: 3.3V
Output current: 0.8A
Case: SOT223
Mounting: SMD
Manufacturer series: MC33275
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 0...20V
auf Bestellung 3096 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
152+0.47 EUR
167+0.43 EUR
196+0.37 EUR
207+0.35 EUR
500+0.33 EUR
Mindestbestellmenge: 129
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NCP115ASN180T1G pVersion=0046&contRep=ZT&docId=005056AB281E1EDC94B7DE3BE78FE0CE&compId=NCP115.PDF?ci_sign=763e3006efd4b8e41c750fe3f43656b468b01d32
NCP115ASN180T1G
Hersteller: ONSEMI
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.8V; 0.3A; TSOP5; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Output voltage: 1.8V
Output current: 0.3A
Case: TSOP5
Mounting: SMD
Manufacturer series: NCP115
Kind of package: reel; tape
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 1.7...5.5V
auf Bestellung 314 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
167+0.43 EUR
234+0.31 EUR
314+0.23 EUR
Mindestbestellmenge: 167
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74LVTH162244MTD FAIRS34870-1.pdf?t.download=true&u=5oefqw
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 16; SMD; tube
Mounting: SMD
Kind of package: tube
Case: TSSOP48
Type of integrated circuit: digital
Number of channels: 16
Kind of output: 3-state
Kind of integrated circuit: buffer; line driver; non-inverting
Operating temperature: -40...85°C
Supply voltage: 2.7...3.6V DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTB150N65S3HF ntb150n65s3hf-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 24A; Idm: 60A; 192W; D2PAK
Type of transistor: N-MOSFET
Power dissipation: 192W
Case: D2PAK
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
On-state resistance: 0.15Ω
Drain current: 24A
Gate-source voltage: ±30V
Pulsed drain current: 60A
Drain-source voltage: 650V
Kind of channel: enhancement
Polarisation: unipolar
Produkt ist nicht verfügbar
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NTD250N65S3H ntd250n65s3h-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13A; Idm: 36A; 106W; DPAK
Type of transistor: N-MOSFET
Power dissipation: 106W
Case: DPAK
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
On-state resistance: 0.25Ω
Drain current: 13A
Gate-source voltage: ±30V
Pulsed drain current: 36A
Drain-source voltage: 650V
Kind of channel: enhancement
Polarisation: unipolar
Produkt ist nicht verfügbar
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FCMT250N65S3 fcmt250n65s3-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; Idm: 30A; 90W; PQFN4
Type of transistor: N-MOSFET
Power dissipation: 90W
Case: PQFN4
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 30A
Drain-source voltage: 650V
Drain current: 12A
On-state resistance: 0.25Ω
Produkt ist nicht verfügbar
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MBRS3200T3G pVersion=0046&contRep=ZT&docId=005056AB752F1EE69CEDFC55B2782FA8&compId=MBRS3200T3G-DTE.PDF?ci_sign=4f2f6745ea73fa4d8e67a0f9f1783e5824d0d12e
MBRS3200T3G
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 200V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMB
Mounting: SMD
Max. off-state voltage: 200V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
Max. forward voltage: 0.59V
auf Bestellung 639 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
126+0.57 EUR
137+0.52 EUR
168+0.43 EUR
243+0.29 EUR
257+0.28 EUR
Mindestbestellmenge: 103
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FDD86367-F085 fdd86367_f085-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 100A; 227W; DPAK3
On-state resistance: 4.2mΩ
Case: DPAK3
Gate-source voltage: ±20V
Drain-source voltage: 80V
Drain current: 100A
Power dissipation: 227W
Gate charge: 68nC
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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MMBZ15VALT1G pVersion=0046&contRep=ZT&docId=005056AB752F1ED7AEDED6F98B88AA14&compId=MMBZ_ser.PDF?ci_sign=1f35ddf42140d92ef46c86e862bfcafdd39158da
MMBZ15VALT1G
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 15V; 1.9A; 40W; double,common anode; SOT23; ±5%
Mounting: SMD
Max. off-state voltage: 12V
Semiconductor structure: common anode; double
Max. forward impulse current: 1.9A
Breakdown voltage: 15V
Leakage current: 50nA
Kind of package: reel; tape
Type of diode: TVS array
Version: ESD
Peak pulse power dissipation: 40W
Case: SOT23
Tolerance: ±5%
auf Bestellung 3917 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
500+0.14 EUR
589+0.12 EUR
691+0.1 EUR
794+0.09 EUR
863+0.083 EUR
920+0.078 EUR
1132+0.063 EUR
1684+0.042 EUR
1780+0.04 EUR
Mindestbestellmenge: 500
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FQA13N80-F109 fqa13n80_f109-d.pdf
FQA13N80-F109
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 8A; Idm: 50.4A; 300W; TO3PN
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 8A
Power dissipation: 300W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 50.4A
Gate charge: 88nC
Produkt ist nicht verfügbar
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NTBG040N120SC1 ntbg040n120sc1-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 43A; Idm: 240A; 178W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 43A
Pulsed drain current: 240A
Power dissipation: 178W
Case: D2PAK-7
Gate-source voltage: -5...20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 106nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
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MBRF20L60CTG mbr20l60ct-d.pdf
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 60V; 10Ax2; TO220FP; Ufmax: 0.69V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 60V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Max. forward voltage: 0.69V
Max. forward impulse current: 0.24kA
Kind of package: tube
Max. load current: 20A
Produkt ist nicht verfügbar
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TIP36CG tip35a-d.pdf
TIP36CG
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 25A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.75 EUR
17+4.28 EUR
30+2.39 EUR
Mindestbestellmenge: 16
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TIP36AG tip35a-d.pdf
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 25A; 125W; TO247-3
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 25A
Power dissipation: 125W
Case: TO247-3
Current gain: 15...75
Mounting: THT
Kind of package: tube
Frequency: 3MHz
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
18+4.16 EUR
25+2.89 EUR
27+2.73 EUR
30+2.63 EUR
Mindestbestellmenge: 18
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NTD280N60S5Z ntd280n60s5z-d.pdf
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 39A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 39A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 17.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NCP1392DDR2G ncp1392-d.pdf
NCP1392DDR2G
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; SO8; -1A÷500mA; 8÷17.5VDC; 600V
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Case: SO8
Output current: -1...0.5A
Supply voltage: 8...17.5V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 40ns
Pulse fall time: 20ns
Voltage class: 600V
Produkt ist nicht verfügbar
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ESD7C3.3DT5G esd7c3.3d-d.pdf
ESD7C3.3DT5G
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; 5V; 0.24W; double,common anode; SOT723; ESD
Type of diode: TVS array
Breakdown voltage: 5V
Peak pulse power dissipation: 0.24W
Semiconductor structure: common anode; double
Mounting: SMD
Case: SOT723
Max. off-state voltage: 3.3V
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 12...13pF
Version: ESD
auf Bestellung 5704 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
319+0.22 EUR
421+0.17 EUR
550+0.13 EUR
582+0.12 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
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