2N5401YBU ON Semiconductor
| Anzahl | Preis |
|---|---|
| 8087+ | 0.067 EUR |
| 10000+ | 0.059 EUR |
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Technische Details 2N5401YBU ON Semiconductor
Description: TRANS PNP 150V 0.6A TO-92-3, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V, Frequency - Transition: 400MHz, Supplier Device Package: TO-92-3, Part Status: Active, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 150 V, Power - Max: 625 mW.
Weitere Produktangebote 2N5401YBU nach Preis ab 0.064 EUR bis 0.42 EUR
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2N5401YBU | Hersteller : ON Semiconductor |
 Trans GP BJT PNP 150V 0.6A 625mW 3-Pin TO-92 Bag |
auf Bestellung 8500 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5401YBU | Hersteller : onsemi |
Description: TRANS PNP 150V 0.6A TO-92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 400MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 625 mW |
auf Bestellung 33541 Stücke: Lieferzeit 10-14 Tag (e) |
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