FCP130N60 Fairchild Semiconductor
Hersteller: Fairchild SemiconductorDescription: MOSFET N-CH 600V 28A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 380 V
auf Bestellung 102 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 91+ | 4.98 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FCP130N60 Fairchild Semiconductor
Description: MOSFET N-CH 600V 28A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 10V, Power Dissipation (Max): 278W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 380 V.
Weitere Produktangebote FCP130N60 nach Preis ab 4.16 EUR bis 8.89 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FCP130N60 | Hersteller : onsemi / Fairchild |
MOSFETs N-Channel SuperFET II MOSFET |
auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
FCP130N60 | Hersteller : onsemi |
Description: MOSFET N-CH 600V 28A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 14A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 380 V |
auf Bestellung 1295 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
FCP130N60 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 28A 3-Pin(3+Tab) TO-220 Tube |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||
| FCP130N60 | Hersteller : ONSEMI |
Description: ONSEMI - FCP130N60 - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 127 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||
 |
FCP130N60 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 600V 28A 3-Pin(3+Tab) TO-220 Tube |
Produkt ist nicht verfügbar |
|||||||||||
| FCP130N60 | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 28A; Idm: 84A; 278W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 28A Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 278W Pulsed drain current: 84A Gate charge: 54nC |
Produkt ist nicht verfügbar |