FCPF380N60 Fairchild Semiconductor


ONSM-S-A0003584318-1.pdf?t.download=true&u=5oefqw
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 25 V
auf Bestellung 5454 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
179+3.08 EUR
Mindestbestellmenge: 179 Stücke
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Technische Details FCPF380N60 Fairchild Semiconductor

Description: MOSFET N-CH 600V 10.2A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc), Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V, Power Dissipation (Max): 31W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-220F-3, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 25 V.

Weitere Produktangebote FCPF380N60 nach Preis ab 2.75 EUR bis 6.81 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
FCPF380N60 FCPF380N60 onsemi FCPF380N60-D.PDF ONSM-S-A0003584318-1.pdf?t.download=true&u=5oefqw MOSFETs SuperFET2, 380mohm
auf Bestellung 130 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.68 EUR
10+3.42 EUR
500+3.25 EUR
1000+3.22 EUR
2000+3.01 EUR
5000+2.75 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCPF380N60 FCPF380N60 onsemi FCPF380N60-D.PDF Description: MOSFET N-CH 600V 10.2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 25 V
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.81 EUR
50+3.45 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FCPF380N60 FCPF380N60-D.PDF ONSM-S-A0003584318-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
MOSFETs SuperFET2, 380mohm
auf Bestellung 130 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+6.68 EUR
10+3.42 EUR
500+3.25 EUR
1000+3.22 EUR
2000+3.01 EUR
5000+2.75 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FCPF380N60 FCPF380N60-D.PDF
Hersteller: onsemi
Description: MOSFET N-CH 600V 10.2A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 31W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1665 pF @ 25 V
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.81 EUR
50+3.45 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH