NTHL040N120M3S ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 12+ | 15.2 EUR |
| 14+ | 13.07 EUR |
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
12 Stücke
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Technische Details NTHL040N120M3S ON Semiconductor
Description: SIC MOS TO247-3L 40MOHM 1200V M3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 54A (Tc), Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V, Power Dissipation (Max): 231W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 10mA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V.
Weitere Produktangebote NTHL040N120M3S nach Preis ab 10.89 EUR bis 21.68 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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NTHL040N120M3S | onsemi |
 SiC MOSFETs SIC MOS TO247-3L 40MOHM 1200V M3 |
auf Bestellung 980 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHL040N120M3S | onsemi |
Description: SIC MOS TO247-3L 40MOHM 1200V M3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 10mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V |
auf Bestellung 381 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTHL040N120M3S | Aptina Imaging |
Trans MOSFET N-CH SiC 1.2KV 54A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 416 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTHL040N120M3S |
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Hersteller: onsemi
SiC MOSFETs SIC MOS TO247-3L 40MOHM 1200V M3
SiC MOSFETs SIC MOS TO247-3L 40MOHM 1200V M3
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.24 EUR |
| 10+ | 11.65 EUR |
| 120+ | 10.89 EUR |
| NTHL040N120M3S |
|
Hersteller: onsemi
Description: SIC MOS TO247-3L 40MOHM 1200V M3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
Description: SIC MOS TO247-3L 40MOHM 1200V M3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V
auf Bestellung 381 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.68 EUR |
| 30+ | 12.92 EUR |
| 60+ | 11.89 EUR |
| 120+ | 11.01 EUR |
| NTHL040N120M3S |
|
Hersteller: Aptina Imaging
Trans MOSFET N-CH SiC 1.2KV 54A 3-Pin(3+Tab) TO-247 Tube
Trans MOSFET N-CH SiC 1.2KV 54A 3-Pin(3+Tab) TO-247 Tube
auf Bestellung 416 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 13.55 EUR |