NTHL040N120M3S ON Semiconductor
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 12.2 EUR |
| 14+ | 10.49 EUR |
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Technische Details NTHL040N120M3S ON Semiconductor
Description: SIC MOS TO247-3L 40MOHM 1200V M3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 54A (Tc), Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V, Power Dissipation (Max): 231W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 10mA, Supplier Device Package: TO-247-3, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V.
Weitere Produktangebote NTHL040N120M3S nach Preis ab 9.03 EUR bis 16.67 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NTHL040N120M3S | Hersteller : onsemi |
 Description: SIC MOS TO247-3L 40MOHM 1200V M3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 54mOhm @ 20A, 18V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 10mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 800 V |
auf Bestellung 131268 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHL040N120M3S | Hersteller : onsemi |
SiC MOSFETs SIC MOS TO247-3L 40MOHM 1200V M3 |
auf Bestellung 1098 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTHL040N120M3S | Hersteller : Aptina Imaging |
Trans MOSFET N-CH SiC 1.2KV 54A 3-Pin(3+Tab) TO-247 Tube |
auf Bestellung 416 Stücke: Lieferzeit 14-21 Tag (e) |
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NTHL040N120M3S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 54A 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| NTHL040N120M3S | Hersteller : ON Semiconductor |
NTHL040N120M3S |
Produkt ist nicht verfügbar |
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| NTHL040N120M3S | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38A; Idm: 134A; 115W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 38A Pulsed drain current: 134A Power dissipation: 115W Case: TO247-3 Gate-source voltage: -10...22V On-state resistance: 80mΩ Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhancement Technology: SiC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTHL040N120M3S | Hersteller : ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 38A; Idm: 134A; 115W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 38A Pulsed drain current: 134A Power dissipation: 115W Case: TO247-3 Gate-source voltage: -10...22V On-state resistance: 80mΩ Mounting: THT Gate charge: 75nC Kind of package: tube Kind of channel: enhancement Technology: SiC |
Produkt ist nicht verfügbar |