| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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| GBPC3508 | ONSEMI |
 Category: Square single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC Electrical mounting: THT Leads: connectors FASTON Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| GBPC3508W | ONSEMI |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 35A Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Max. forward voltage: 1.1V Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.0mm Kind of package: bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MBT3906DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.15W Case: SC70-6; SC88; SOT363 Current gain: 100...300 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
auf Bestellung 634 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBT3906DW1T1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363 Type of transistor: PNP x2 Polarisation: bipolar Collector-emitter voltage: 40V Collector current: 0.2A Power dissipation: 0.15W Case: SC70-6; SC88; SOT363 Mounting: SMD Frequency: 250MHz Application: automotive industry Current gain: 100...300 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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74LVX132MX | ONSEMI |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; 20uA Mounting: SMD Supply voltage: 2...3.6V DC Kind of gate: NAND Type of integrated circuit: digital Operating temperature: -40...85°C Quiescent current: 20µA Kind of input: with Schmitt trigger Number of inputs: 2 Kind of package: reel; tape Case: SO14 Family: LVX Number of channels: quad; 4 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MUN5231DW1T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.385W Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Manufacturer standard package: 3000pcs. Current gain: 8...15 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC14050BDTR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,hex; Ch: 6; IN: 1; CMOS; SMD; TSSOP16; -55÷125°C Type of integrated circuit: digital Kind of integrated circuit: buffer; hex Number of channels: 6 Number of inputs: 1 Technology: CMOS Mounting: SMD Case: TSSOP16 Operating temperature: -55...125°C Kind of package: reel; tape Supply voltage: 3...18V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC14050BDR2G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 6 Technology: CMOS Mounting: SMD Case: SO16 Operating temperature: -55...125°C Supply voltage: 3...18V DC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMUN2231LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Kind of transistor: BRT Type of transistor: NPN Base-emitter resistor: 2.2kΩ Collector current: 0.1A Collector-emitter voltage: 50V Base resistor: 2.2kΩ Power dissipation: 0.246W Polarisation: bipolar |
auf Bestellung 5850 Stücke: Lieferzeit 14-21 Tag (e) |
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NSVMMUN2231LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.4W Case: SOT23; TO236AB Current gain: 8...15 Mounting: SMD Kind of package: reel; tape Base resistor: 2.2kΩ Application: automotive industry Base-emitter resistor: 2.2kΩ Manufacturer standard package: 3000pcs. |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| FPF2283CUCX | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷85°C Mounting: SMD Supply voltage: 2.8...28V DC Active logical level: low Type of integrated circuit: power switch Operating temperature: -40...85°C Integrated circuit features: thermal protection Kind of package: reel; tape Case: WLCSP20 Number of channels: 1 On-state resistance: 7.5mΩ |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FCH165N60E | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 69A; 227W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Pulsed drain current: 69A Power dissipation: 227W Case: TO247 Gate-source voltage: ±20V On-state resistance: 0.165Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 75nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| FCH165N65S3R0-F155 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247 Mounting: THT Case: TO247 Kind of package: tube Type of transistor: N-MOSFET Gate-source voltage: ±30V On-state resistance: 0.14Ω Pulsed drain current: 47.5A Power dissipation: 154W Gate charge: 39nC Polarisation: unipolar Drain current: 12.3A Kind of channel: enhancement Drain-source voltage: 650V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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1N5338BRLG | ONSEMI |
 Category: THT Zener diodesDescription: Diode: Zener; 5W; 5.1V; CASE017AA; single diode; reel,tape; 1N53xxB Type of diode: Zener Power dissipation: 5W Zener voltage: 5.1V Case: CASE017AA Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: 1N53xxB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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ES1F | ONSEMI |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 300V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 300V Load current: 1A Reverse recovery time: 35ns Semiconductor structure: single diode Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape Capacitance: 10pF Power dissipation: 1.47W Features of semiconductor devices: fast switching Leakage current: 0.1mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| ASX340AT3C00XPED0-DPBR | ONSEMI |
Category: Unclassified Description: ASX340AT3C00XPED0-DPBR |
auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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MM3Z2V7T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 2.7V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.3W Zener voltage: 2.7V Case: SOD323 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM3ZxxT1G |
auf Bestellung 4250 Stücke: Lieferzeit 14-21 Tag (e) |
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MM3Z2V7ST1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 2.7V; SMD; SOD323; single diode; reel,tape Type of diode: Zener Power dissipation: 0.5W Zener voltage: 2.7V Case: SOD323 Mounting: SMD Tolerance: ±2% Semiconductor structure: single diode Kind of package: reel; tape Manufacturer series: MM3ZxxST1G |
auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) |
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NJL1302DG | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP + diode; bipolar; 260V; 15A; 200W; TO264-5 Type of transistor: PNP + diode Polarisation: bipolar Collector-emitter voltage: 260V Collector current: 15A Power dissipation: 200W Case: TO264-5 Pulsed collector current: 25A Current gain: 45...150 Mounting: THT Kind of package: tube Frequency: 30MHz |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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| NJL3281DG | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN + diode; bipolar; 260V; 15A; 200W; TO264-5 Type of transistor: NPN + diode Polarisation: bipolar Collector-emitter voltage: 260V Collector current: 15A Power dissipation: 200W Case: TO264-5 Pulsed collector current: 25A Current gain: 45...150 Mounting: THT Kind of package: tube Frequency: 30MHz |
auf Bestellung 31 Stücke: Lieferzeit 14-21 Tag (e) |
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FAD3171MXA | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: driver; high-side,MOSFET gate driver; SO8; -2.5÷2.5A; 6÷18VDC Type of integrated circuit: driver Kind of integrated circuit: high-side; MOSFET gate driver Case: SO8 Output current: -2.5...2.5A Supply voltage: 6...18V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 50ns Pulse fall time: 50ns Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| MOC3032SM | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 250V; triac; SMT6; Ch: 1; MOC301XM; tube Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC301XM Kind of package: tube Output voltage: 250V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| MOC3032SR2M | ONSEMI |
Category: Optotriacs Description: Optotriac; 4.17kV; Uout: 250V; triac; SMT6; Ch: 1; MOC301XM Type of optocoupler: optotriac Insulation voltage: 4.17kV Kind of output: triac Case: SMT6 Max. off-state voltage: 6V Trigger current: 10mA Mounting: SMD Number of channels: 1 Manufacturer series: MOC301XM Kind of package: reel; tape Output voltage: 250V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTMFS2D5N08XT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 181A; Idm: 761A; 148W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 181A Pulsed drain current: 761A Power dissipation: 148W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 2.1mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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MMBT100 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.35W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.5A Power dissipation: 0.35W Case: SOT23; TO236AB Current gain: 100...450 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSP13BU | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Kind of transistor: Darlington Collector-emitter voltage: 30V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Mounting: THT Kind of package: bulk |
auf Bestellung 238 Stücke: Lieferzeit 14-21 Tag (e) |
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MOC212M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 50%@10mA Collector-emitter voltage: 30V Case: SO8 Turn-on time: 7.5µs Turn-off time: 5.7µs Max. off-state voltage: 6V |
auf Bestellung 2990 Stücke: Lieferzeit 14-21 Tag (e) |
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MOC217M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 100%@1mA Collector-emitter voltage: 30V Case: SO8 Turn-on time: 7.5µs Turn-off time: 5.7µs Max. off-state voltage: 6V |
auf Bestellung 1460 Stücke: Lieferzeit 14-21 Tag (e) |
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MOC213R2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 100%@10mA Collector-emitter voltage: 30V Case: SO8 Turn-on time: 7.5µs Turn-off time: 5.7µs |
auf Bestellung 979 Stücke: Lieferzeit 14-21 Tag (e) |
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MOC211M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 20%@10mA Collector-emitter voltage: 30V Case: SO8 Turn-on time: 7.5µs Turn-off time: 5.7µs Max. off-state voltage: 6V |
auf Bestellung 314 Stücke: Lieferzeit 14-21 Tag (e) |
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MOC213M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 100%@10mA Collector-emitter voltage: 30V Case: SO8 Turn-on time: 7.5µs Turn-off time: 5.7µs |
auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
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MOC216M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 2.5kV CTR@If: 50%@1mA Collector-emitter voltage: 30V Case: SO8 Turn-on time: 7.5µs Turn-off time: 5.7µs Max. off-state voltage: 6V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC74HC160ADTR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; counter; IN: 4; CMOS; SMD; TSSOP16; HC; -55÷125°C; OUT: 4 Type of integrated circuit: digital Kind of integrated circuit: counter Number of inputs: 4 Technology: CMOS Mounting: SMD Case: TSSOP16 Family: HC Operating temperature: -55...125°C Number of outputs: 4 Trigger: positive-edge-triggered |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NIV1241MTWTAG | ONSEMI |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 25V; WDFN6; automotive industry; reel,tape Application: automotive industry Max. off-state voltage: 24V Kind of package: reel; tape Case: WDFN6 Type of diode: TVS Mounting: SMD Breakdown voltage: 25V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NGTB75N65FL2WG | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 75A; 265W; TO247-3 Type of transistor: IGBT Power dissipation: 265W Case: TO247-3 Mounting: THT Gate charge: 310nC Kind of package: tube Collector current: 75A Collector-emitter voltage: 650V Pulsed collector current: 200A Gate-emitter voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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BAV70 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.2A Reverse recovery time: 6ns Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 2A Power dissipation: 0.35W Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMBD1205 | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.2A Reverse recovery time: 4ns Semiconductor structure: common anode; double Capacitance: 2pF Case: SOT23 Max. forward voltage: 1.1V Max. forward impulse current: 2A Leakage current: 0.1mA Power dissipation: 0.35W Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NTP095N65S3H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 84A Power dissipation: 208W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NTP095N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; TO220-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 36A Pulsed drain current: 90A Power dissipation: 272W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 95mΩ Mounting: THT Gate charge: 66nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| CAT9532HV6I-GT2 | ONSEMI |
Category: LED drivers Description: IC: driver; boost,buck; Ch: 16; 2.3÷5.5V; 400kHz; 1W Power dissipation: 1W Mounting: SMD Operating temperature: -40...85°C Number of channels: 16 Frequency: 400kHz Topology: boost; buck Input voltage: 2.3...5.5V Type of integrated circuit: driver DC supply current: 550µA |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NXH240B120H3Q1PG | ONSEMI |
Category: IGBT modules Description: Module: IGBT; NTC thermistor; 158W; Field Stop,Trench Type of semiconductor module: IGBT Power dissipation: 158W Technology: Field Stop; Trench Pulsed collector current: 68A Topology: NTC thermistor |
auf Bestellung 378 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74AC573DTR2G | ONSEMI |
Category: Latches Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; CMOS; 2÷6VDC Type of integrated circuit: digital Kind of integrated circuit: 3-state; buffer; line driver; octal Number of channels: 8 Technology: CMOS Supply voltage: 2...6V DC Mounting: SMD Case: TSSOP20 Manufacturer series: AC Operating temperature: -40...85°C Family: AC Kind of output: 3-state Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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SZESD9902MLT1G | ONSEMI |
Category: Protection diodes - arrays Description: Diode: TVS array; bidirectional; SOT23; Ch: 2; reel,tape Case: SOT23 Mounting: SMD Kind of package: reel; tape Number of channels: 2 Application: automotive industry Semiconductor structure: bidirectional Type of diode: TVS array |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NTH4L030N120M3S | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 193A; 156W Type of transistor: N-MOSFET Drain-source voltage: 1.2kV Drain current: 52A On-state resistance: 58mΩ Pulsed drain current: 193A Power dissipation: 156W Gate charge: 107nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Gate-source voltage: -10...22V Kind of package: tube Case: TO247-4 Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NVH4L030N120M3S | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 193A; 156W Type of transistor: N-MOSFET Drain-source voltage: 1.2kV Drain current: 52A On-state resistance: 58mΩ Pulsed drain current: 193A Power dissipation: 156W Gate charge: 107nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Kind of channel: enhancement Gate-source voltage: -3...18V Kind of package: tube Case: TO247-4 Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTHL030N120M3S | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET |
auf Bestellung 4050 Stücke: Lieferzeit 14-21 Tag (e) |
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SBC847CDW1T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz Application: automotive industry |
auf Bestellung 857 Stücke: Lieferzeit 14-21 Tag (e) |
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BC847CDW1T1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363 Type of transistor: NPN x2 Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.38W Case: SC70-6; SC88; SOT363 Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BC847CLT3G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 420...800 Mounting: SMD Kind of package: reel; tape Frequency: 100MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
MC74ACT157DR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer; Ch: 4; IN: 4; TTL; SMD; SOIC16; ACT; ACT Type of integrated circuit: digital Kind of integrated circuit: multiplexer Number of channels: 4 Number of inputs: 4 Mounting: SMD Case: SOIC16 Family: ACT Operating temperature: -40...85°C Supply voltage: 4.5...5.5V DC Manufacturer series: ACT Technology: TTL Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC74ACT157DTR2G | ONSEMI |
Category: Decoders, multiplexers, switches Description: IC: digital; multiplexer; Ch: 4; IN: 2; SMD; TSSOP16; ACT; -40÷85°C Type of integrated circuit: digital Kind of integrated circuit: multiplexer Number of channels: 4 Number of inputs: 2 Mounting: SMD Case: TSSOP16 Family: ACT Operating temperature: -40...85°C Number of outputs: 4 Supply voltage: 4.5...5.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NJT4031NT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4 Collector current: 3A Mounting: SMD Collector-emitter voltage: 40V Power dissipation: 2W Polarisation: bipolar Type of transistor: NPN Current gain: 200...500 Kind of package: reel; tape Case: SOT223-4; TO261-4 Frequency: 215MHz |
auf Bestellung 889 Stücke: Lieferzeit 14-21 Tag (e) |
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SS34 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape Mounting: SMD Load current: 3A Kind of package: reel; tape Semiconductor structure: single diode Case: SMC Type of diode: Schottky rectifying Max. forward impulse current: 100A Max. forward voltage: 0.5V Max. off-state voltage: 40V |
auf Bestellung 446 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCP705MTADJTCG | ONSEMI |
Category: LDO adjustable voltage regulators Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5.3V; 500mA Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO; linear Voltage drop: 0.35V Output voltage: 0.8...5.3V Output current: 0.5A Case: WDFN6 Mounting: SMD Manufacturer series: NCP705 Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...5.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| NTH4L014N120M3P | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 407A; 343W Case: TO247-4 Mounting: THT Pulsed drain current: 407A Power dissipation: 343W Gate charge: 322nC Polarisation: unipolar Technology: SiC Features of semiconductor devices: Kelvin terminal Drain current: 107A Kind of channel: enhancement Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Gate-source voltage: -10...22V Kind of package: tube On-state resistance: 29mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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NC7SZ74L8X | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; UQFN8; reel,tape Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 1 Technology: CMOS Mounting: SMD Case: UQFN8 Operating temperature: -40...85°C Supply voltage: 1.65...5.5V DC Kind of package: reel; tape Trigger: positive-edge-triggered Manufacturer series: 7SZ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NCP5111DR2G | ONSEMI |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA Type of integrated circuit: driver Topology: IGBT half-bridge; MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -500...250mA Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Impulse rise time: 160ns Pulse fall time: 75ns Kind of package: reel; tape Voltage class: 600V Protection: undervoltage UVP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
 |
NRVBD650CTT4G-VF01 | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK; SMD; 50V; 3Ax2; reel,tape Type of diode: Schottky rectifying Case: DPAK Mounting: SMD Max. off-state voltage: 50V Load current: 3A x2 Semiconductor structure: common cathode; double Max. forward voltage: 0.9V Max. load current: 6A Max. forward impulse current: 75A Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BSV52 | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 12V; 0.2A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 0.2A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 25...120 Mounting: SMD Kind of package: reel; tape Frequency: 400MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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BSV52LT1G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 12V; 0.1A; 0.225W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 12V Collector current: 0.1A Power dissipation: 0.225W Case: SOT23; TO236AB Current gain: 40...120 Mounting: SMD Kind of package: reel; tape Frequency: 400MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| GBPC3508 |
|
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC
Electrical mounting: THT
Leads: connectors FASTON
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| GBPC3508W |
|
Hersteller: ONSEMI
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; Ufmax: 1.1V; If: 35A
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.1V
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.0mm
Kind of package: bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MBT3906DW1T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Current gain: 100...300
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
auf Bestellung 634 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 455+ | 0.19 EUR |
| 634+ | 0.13 EUR |
| SMBT3906DW1T1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Frequency: 250MHz
Application: automotive industry
Current gain: 100...300
Kind of package: reel; tape
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 40V; 0.2A; 0.15W; SC70-6,SC88,SOT363
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.15W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Frequency: 250MHz
Application: automotive industry
Current gain: 100...300
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74LVX132MX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; 20uA
Mounting: SMD
Supply voltage: 2...3.6V DC
Kind of gate: NAND
Type of integrated circuit: digital
Operating temperature: -40...85°C
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Number of inputs: 2
Kind of package: reel; tape
Case: SO14
Family: LVX
Number of channels: quad; 4
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; SMD; SO14; 2÷3.6VDC; -40÷85°C; 20uA
Mounting: SMD
Supply voltage: 2...3.6V DC
Kind of gate: NAND
Type of integrated circuit: digital
Operating temperature: -40...85°C
Quiescent current: 20µA
Kind of input: with Schmitt trigger
Number of inputs: 2
Kind of package: reel; tape
Case: SO14
Family: LVX
Number of channels: quad; 4
Produkt ist nicht verfügbar
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MUN5231DW1T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Manufacturer standard package: 3000pcs.
Current gain: 8...15
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 100mA; 385mW; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.385W
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Manufacturer standard package: 3000pcs.
Current gain: 8...15
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14050BDTR2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,hex; Ch: 6; IN: 1; CMOS; SMD; TSSOP16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; hex
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,hex; Ch: 6; IN: 1; CMOS; SMD; TSSOP16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; hex
Number of channels: 6
Number of inputs: 1
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Operating temperature: -55...125°C
Kind of package: reel; tape
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC14050BDR2G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; SO16; -55÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 6
Technology: CMOS
Mounting: SMD
Case: SO16
Operating temperature: -55...125°C
Supply voltage: 3...18V DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MMUN2231LT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Type of transistor: NPN
Base-emitter resistor: 2.2kΩ
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Power dissipation: 0.246W
Polarisation: bipolar
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.246W; SOT23,TO236AB
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Kind of transistor: BRT
Type of transistor: NPN
Base-emitter resistor: 2.2kΩ
Collector current: 0.1A
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Power dissipation: 0.246W
Polarisation: bipolar
auf Bestellung 5850 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 455+ | 0.19 EUR |
| 625+ | 0.13 EUR |
| 910+ | 0.094 EUR |
| 1069+ | 0.08 EUR |
| 1530+ | 0.056 EUR |
| 1761+ | 0.049 EUR |
| 1909+ | 0.044 EUR |
| 3000+ | 0.039 EUR |
| NSVMMUN2231LT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.4W
Case: SOT23; TO236AB
Current gain: 8...15
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 2.2kΩ
Manufacturer standard package: 3000pcs.
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 100mA; 400mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.4W
Case: SOT23; TO236AB
Current gain: 8...15
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Application: automotive industry
Base-emitter resistor: 2.2kΩ
Manufacturer standard package: 3000pcs.
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FPF2283CUCX |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷85°C
Mounting: SMD
Supply voltage: 2.8...28V DC
Active logical level: low
Type of integrated circuit: power switch
Operating temperature: -40...85°C
Integrated circuit features: thermal protection
Kind of package: reel; tape
Case: WLCSP20
Number of channels: 1
On-state resistance: 7.5mΩ
Category: Power switches - integrated circuits
Description: IC: power switch; Ch: 1; SMD; WLCSP20; reel,tape; -40÷85°C
Mounting: SMD
Supply voltage: 2.8...28V DC
Active logical level: low
Type of integrated circuit: power switch
Operating temperature: -40...85°C
Integrated circuit features: thermal protection
Kind of package: reel; tape
Case: WLCSP20
Number of channels: 1
On-state resistance: 7.5mΩ
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FCH165N60E |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 69A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 69A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 75nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 69A; 227W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Pulsed drain current: 69A
Power dissipation: 227W
Case: TO247
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 75nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCH165N65S3R0-F155 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Pulsed drain current: 47.5A
Power dissipation: 154W
Gate charge: 39nC
Polarisation: unipolar
Drain current: 12.3A
Kind of channel: enhancement
Drain-source voltage: 650V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12.3A; Idm: 47.5A; 154W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.14Ω
Pulsed drain current: 47.5A
Power dissipation: 154W
Gate charge: 39nC
Polarisation: unipolar
Drain current: 12.3A
Kind of channel: enhancement
Drain-source voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5338BRLG |
|
Hersteller: ONSEMI
Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.1V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.1V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Category: THT Zener diodes
Description: Diode: Zener; 5W; 5.1V; CASE017AA; single diode; reel,tape; 1N53xxB
Type of diode: Zener
Power dissipation: 5W
Zener voltage: 5.1V
Case: CASE017AA
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: 1N53xxB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ES1F |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
Power dissipation: 1.47W
Features of semiconductor devices: fast switching
Leakage current: 0.1mA
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 1A; 35ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 1A
Reverse recovery time: 35ns
Semiconductor structure: single diode
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Capacitance: 10pF
Power dissipation: 1.47W
Features of semiconductor devices: fast switching
Leakage current: 0.1mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ASX340AT3C00XPED0-DPBR |
|
auf Bestellung 750 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 750+ | 15.16 EUR |
| MM3Z2V7T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.7V
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 2.7V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 2.7V
Case: SOD323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxT1G
auf Bestellung 4250 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 834+ | 0.1 EUR |
| 1087+ | 0.079 EUR |
| 1250+ | 0.068 EUR |
| 1799+ | 0.048 EUR |
| 2146+ | 0.039 EUR |
| 3206+ | 0.026 EUR |
| 3356+ | 0.025 EUR |
| 3598+ | 0.024 EUR |
| MM3Z2V7ST1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxST1G
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 2.7V; SMD; SOD323; single diode; reel,tape
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 2.7V
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Kind of package: reel; tape
Manufacturer series: MM3ZxxST1G
auf Bestellung 900 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 834+ | 0.1 EUR |
| 900+ | 0.095 EUR |
| NJL1302DG |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP + diode; bipolar; 260V; 15A; 200W; TO264-5
Type of transistor: PNP + diode
Polarisation: bipolar
Collector-emitter voltage: 260V
Collector current: 15A
Power dissipation: 200W
Case: TO264-5
Pulsed collector current: 25A
Current gain: 45...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Category: PNP THT transistors
Description: Transistor: PNP + diode; bipolar; 260V; 15A; 200W; TO264-5
Type of transistor: PNP + diode
Polarisation: bipolar
Collector-emitter voltage: 260V
Collector current: 15A
Power dissipation: 200W
Case: TO264-5
Pulsed collector current: 25A
Current gain: 45...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 7.76 EUR |
| 12+ | 7.37 EUR |
| 16+ | 5.55 EUR |
| NJL3281DG |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN + diode; bipolar; 260V; 15A; 200W; TO264-5
Type of transistor: NPN + diode
Polarisation: bipolar
Collector-emitter voltage: 260V
Collector current: 15A
Power dissipation: 200W
Case: TO264-5
Pulsed collector current: 25A
Current gain: 45...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
Category: NPN THT transistors
Description: Transistor: NPN + diode; bipolar; 260V; 15A; 200W; TO264-5
Type of transistor: NPN + diode
Polarisation: bipolar
Collector-emitter voltage: 260V
Collector current: 15A
Power dissipation: 200W
Case: TO264-5
Pulsed collector current: 25A
Current gain: 45...150
Mounting: THT
Kind of package: tube
Frequency: 30MHz
auf Bestellung 31 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 9.69 EUR |
| 10+ | 9.15 EUR |
| 11+ | 8.08 EUR |
| 12+ | 7.24 EUR |
| FAD3171MXA |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; -2.5÷2.5A; 6÷18VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Output current: -2.5...2.5A
Supply voltage: 6...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 50ns
Pulse fall time: 50ns
Kind of package: reel; tape
Category: Buffers, transceivers, drivers
Description: IC: driver; high-side,MOSFET gate driver; SO8; -2.5÷2.5A; 6÷18VDC
Type of integrated circuit: driver
Kind of integrated circuit: high-side; MOSFET gate driver
Case: SO8
Output current: -2.5...2.5A
Supply voltage: 6...18V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 50ns
Pulse fall time: 50ns
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3032SM |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; triac; SMT6; Ch: 1; MOC301XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC301XM
Kind of package: tube
Output voltage: 250V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; triac; SMT6; Ch: 1; MOC301XM; tube
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC301XM
Kind of package: tube
Output voltage: 250V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC3032SR2M |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; triac; SMT6; Ch: 1; MOC301XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC301XM
Kind of package: reel; tape
Output voltage: 250V
Category: Optotriacs
Description: Optotriac; 4.17kV; Uout: 250V; triac; SMT6; Ch: 1; MOC301XM
Type of optocoupler: optotriac
Insulation voltage: 4.17kV
Kind of output: triac
Case: SMT6
Max. off-state voltage: 6V
Trigger current: 10mA
Mounting: SMD
Number of channels: 1
Manufacturer series: MOC301XM
Kind of package: reel; tape
Output voltage: 250V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS2D5N08XT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 181A; Idm: 761A; 148W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 181A
Pulsed drain current: 761A
Power dissipation: 148W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 181A; Idm: 761A; 148W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 181A
Pulsed drain current: 761A
Power dissipation: 148W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MMBT100 |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Current gain: 100...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.5A; 0.35W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Current gain: 100...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSP13BU |
|
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 30V; 0.5A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 30V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: bulk
auf Bestellung 238 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 200+ | 0.43 EUR |
| 238+ | 0.36 EUR |
| MOC212M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 50%@10mA
Collector-emitter voltage: 30V
Case: SO8
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Max. off-state voltage: 6V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 50%@10mA
Collector-emitter voltage: 30V
Case: SO8
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Max. off-state voltage: 6V
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 107+ | 0.8 EUR |
| 160+ | 0.54 EUR |
| 242+ | 0.36 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.26 EUR |
| MOC217M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 100%@1mA
Collector-emitter voltage: 30V
Case: SO8
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Max. off-state voltage: 6V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 100%@1mA
Collector-emitter voltage: 30V
Case: SO8
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Max. off-state voltage: 6V
auf Bestellung 1460 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 79+ | 1.09 EUR |
| 139+ | 0.61 EUR |
| 161+ | 0.54 EUR |
| 174+ | 0.49 EUR |
| MOC213R2M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 100%@10mA
Collector-emitter voltage: 30V
Case: SO8
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 100%@10mA
Collector-emitter voltage: 30V
Case: SO8
Turn-on time: 7.5µs
Turn-off time: 5.7µs
auf Bestellung 979 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 167+ | 0.51 EUR |
| 207+ | 0.42 EUR |
| 227+ | 0.38 EUR |
| 258+ | 0.33 EUR |
| 500+ | 0.31 EUR |
| MOC211M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 20%@10mA
Collector-emitter voltage: 30V
Case: SO8
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Max. off-state voltage: 6V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 20%@10mA
Collector-emitter voltage: 30V
Case: SO8
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Max. off-state voltage: 6V
auf Bestellung 314 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 103+ | 0.83 EUR |
| 139+ | 0.62 EUR |
| 159+ | 0.54 EUR |
| 176+ | 0.49 EUR |
| 192+ | 0.44 EUR |
| MOC213M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 100%@10mA
Collector-emitter voltage: 30V
Case: SO8
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 100%@10mA
Collector-emitter voltage: 30V
Case: SO8
Turn-on time: 7.5µs
Turn-off time: 5.7µs
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 46+ | 1.86 EUR |
| MOC216M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 50%@1mA
Collector-emitter voltage: 30V
Case: SO8
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Max. off-state voltage: 6V
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 2.5kV; Uce: 30V; SO8
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 2.5kV
CTR@If: 50%@1mA
Collector-emitter voltage: 30V
Case: SO8
Turn-on time: 7.5µs
Turn-off time: 5.7µs
Max. off-state voltage: 6V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC160ADTR2G |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; counter; IN: 4; CMOS; SMD; TSSOP16; HC; -55÷125°C; OUT: 4
Type of integrated circuit: digital
Kind of integrated circuit: counter
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Family: HC
Operating temperature: -55...125°C
Number of outputs: 4
Trigger: positive-edge-triggered
Category: Counters/dividers
Description: IC: digital; counter; IN: 4; CMOS; SMD; TSSOP16; HC; -55÷125°C; OUT: 4
Type of integrated circuit: digital
Kind of integrated circuit: counter
Number of inputs: 4
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Family: HC
Operating temperature: -55...125°C
Number of outputs: 4
Trigger: positive-edge-triggered
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.19 EUR |
| NIV1241MTWTAG |
|
Hersteller: ONSEMI
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 25V; WDFN6; automotive industry; reel,tape
Application: automotive industry
Max. off-state voltage: 24V
Kind of package: reel; tape
Case: WDFN6
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 25V
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 25V; WDFN6; automotive industry; reel,tape
Application: automotive industry
Max. off-state voltage: 24V
Kind of package: reel; tape
Case: WDFN6
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 25V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NGTB75N65FL2WG |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 265W; TO247-3
Type of transistor: IGBT
Power dissipation: 265W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Collector current: 75A
Collector-emitter voltage: 650V
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 75A; 265W; TO247-3
Type of transistor: IGBT
Power dissipation: 265W
Case: TO247-3
Mounting: THT
Gate charge: 310nC
Kind of package: tube
Collector current: 75A
Collector-emitter voltage: 650V
Pulsed collector current: 200A
Gate-emitter voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BAV70 |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.2A; 6ns; SOT23; Ufmax: 1.25V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.2A
Reverse recovery time: 6ns
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 2A
Power dissipation: 0.35W
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MMBD1205 |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.2A; 4ns; SOT23; Ufmax: 1.1V; Ifsm: 2A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.2A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Capacitance: 2pF
Case: SOT23
Max. forward voltage: 1.1V
Max. forward impulse current: 2A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTP095N65S3H |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 84A; 208W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 84A
Power dissipation: 208W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTP095N65S3HF |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 36A; Idm: 90A; 272W; TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 36A
Pulsed drain current: 90A
Power dissipation: 272W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT9532HV6I-GT2 |
|
Hersteller: ONSEMI
Category: LED drivers
Description: IC: driver; boost,buck; Ch: 16; 2.3÷5.5V; 400kHz; 1W
Power dissipation: 1W
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 16
Frequency: 400kHz
Topology: boost; buck
Input voltage: 2.3...5.5V
Type of integrated circuit: driver
DC supply current: 550µA
Category: LED drivers
Description: IC: driver; boost,buck; Ch: 16; 2.3÷5.5V; 400kHz; 1W
Power dissipation: 1W
Mounting: SMD
Operating temperature: -40...85°C
Number of channels: 16
Frequency: 400kHz
Topology: boost; buck
Input voltage: 2.3...5.5V
Type of integrated circuit: driver
DC supply current: 550µA
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 1.39 EUR |
| NXH240B120H3Q1PG |
|
Hersteller: ONSEMI
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; 158W; Field Stop,Trench
Type of semiconductor module: IGBT
Power dissipation: 158W
Technology: Field Stop; Trench
Pulsed collector current: 68A
Topology: NTC thermistor
Category: IGBT modules
Description: Module: IGBT; NTC thermistor; 158W; Field Stop,Trench
Type of semiconductor module: IGBT
Power dissipation: 158W
Technology: Field Stop; Trench
Pulsed collector current: 68A
Topology: NTC thermistor
auf Bestellung 378 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 133.61 EUR |
| MC74AC573DTR2G |
|
Hersteller: ONSEMI
Category: Latches
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: AC
Operating temperature: -40...85°C
Family: AC
Kind of output: 3-state
Kind of package: reel; tape
Category: Latches
Description: IC: digital; 3-state,buffer,octal,line driver; Ch: 8; CMOS; 2÷6VDC
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; buffer; line driver; octal
Number of channels: 8
Technology: CMOS
Supply voltage: 2...6V DC
Mounting: SMD
Case: TSSOP20
Manufacturer series: AC
Operating temperature: -40...85°C
Family: AC
Kind of output: 3-state
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| SZESD9902MLT1G |
|
Hersteller: ONSEMI
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; SOT23; Ch: 2; reel,tape
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Application: automotive industry
Semiconductor structure: bidirectional
Type of diode: TVS array
Category: Protection diodes - arrays
Description: Diode: TVS array; bidirectional; SOT23; Ch: 2; reel,tape
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Number of channels: 2
Application: automotive industry
Semiconductor structure: bidirectional
Type of diode: TVS array
Produkt ist nicht verfügbar
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| NTH4L030N120M3S |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 193A; 156W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 52A
On-state resistance: 58mΩ
Pulsed drain current: 193A
Power dissipation: 156W
Gate charge: 107nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -10...22V
Kind of package: tube
Case: TO247-4
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 193A; 156W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 52A
On-state resistance: 58mΩ
Pulsed drain current: 193A
Power dissipation: 156W
Gate charge: 107nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -10...22V
Kind of package: tube
Case: TO247-4
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NVH4L030N120M3S |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 193A; 156W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 52A
On-state resistance: 58mΩ
Pulsed drain current: 193A
Power dissipation: 156W
Gate charge: 107nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -3...18V
Kind of package: tube
Case: TO247-4
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 52A; Idm: 193A; 156W
Type of transistor: N-MOSFET
Drain-source voltage: 1.2kV
Drain current: 52A
On-state resistance: 58mΩ
Pulsed drain current: 193A
Power dissipation: 156W
Gate charge: 107nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Kind of channel: enhancement
Gate-source voltage: -3...18V
Kind of package: tube
Case: TO247-4
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NTHL030N120M3S |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 4050 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 60+ | 11.48 EUR |
| SBC847CDW1T1G |
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
auf Bestellung 857 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 313+ | 0.27 EUR |
| 404+ | 0.21 EUR |
| 481+ | 0.18 EUR |
| 857+ | 0.099 EUR |
| BC847CDW1T1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; 45V; 0.1A; 0.38W; SC70-6,SC88,SOT363
Type of transistor: NPN x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.38W
Case: SC70-6; SC88; SOT363
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
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| BC847CLT3G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74ACT157DR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; IN: 4; TTL; SMD; SOIC16; ACT; ACT
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 4
Number of inputs: 4
Mounting: SMD
Case: SOIC16
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Technology: TTL
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; IN: 4; TTL; SMD; SOIC16; ACT; ACT
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 4
Number of inputs: 4
Mounting: SMD
Case: SOIC16
Family: ACT
Operating temperature: -40...85°C
Supply voltage: 4.5...5.5V DC
Manufacturer series: ACT
Technology: TTL
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74ACT157DTR2G |
|
Hersteller: ONSEMI
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; IN: 2; SMD; TSSOP16; ACT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP16
Family: ACT
Operating temperature: -40...85°C
Number of outputs: 4
Supply voltage: 4.5...5.5V
Category: Decoders, multiplexers, switches
Description: IC: digital; multiplexer; Ch: 4; IN: 2; SMD; TSSOP16; ACT; -40÷85°C
Type of integrated circuit: digital
Kind of integrated circuit: multiplexer
Number of channels: 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP16
Family: ACT
Operating temperature: -40...85°C
Number of outputs: 4
Supply voltage: 4.5...5.5V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NJT4031NT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4
Collector current: 3A
Mounting: SMD
Collector-emitter voltage: 40V
Power dissipation: 2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 200...500
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Frequency: 215MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 40V; 3A; 2W; SOT223-4,TO261-4
Collector current: 3A
Mounting: SMD
Collector-emitter voltage: 40V
Power dissipation: 2W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 200...500
Kind of package: reel; tape
Case: SOT223-4; TO261-4
Frequency: 215MHz
auf Bestellung 889 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 67+ | 1.27 EUR |
| 106+ | 0.81 EUR |
| 138+ | 0.62 EUR |
| 155+ | 0.55 EUR |
| 200+ | 0.49 EUR |
| 250+ | 0.46 EUR |
| 500+ | 0.4 EUR |
| SS34 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Mounting: SMD
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Max. forward impulse current: 100A
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 40V; 3A; reel,tape
Mounting: SMD
Load current: 3A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SMC
Type of diode: Schottky rectifying
Max. forward impulse current: 100A
Max. forward voltage: 0.5V
Max. off-state voltage: 40V
auf Bestellung 446 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 82+ | 1.04 EUR |
| 128+ | 0.67 EUR |
| 167+ | 0.51 EUR |
| 186+ | 0.46 EUR |
| 250+ | 0.4 EUR |
| NCP705MTADJTCG |
|
Hersteller: ONSEMI
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5.3V; 500mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.35V
Output voltage: 0.8...5.3V
Output current: 0.5A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP705
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...5.5V
Category: LDO adjustable voltage regulators
Description: IC: voltage regulator; LDO,linear,adjustable; 0.8÷5.3V; 500mA
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO; linear
Voltage drop: 0.35V
Output voltage: 0.8...5.3V
Output current: 0.5A
Case: WDFN6
Mounting: SMD
Manufacturer series: NCP705
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...5.5V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTH4L014N120M3P |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 407A; 343W
Case: TO247-4
Mounting: THT
Pulsed drain current: 407A
Power dissipation: 343W
Gate charge: 322nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 107A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Kind of package: tube
On-state resistance: 29mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 107A; Idm: 407A; 343W
Case: TO247-4
Mounting: THT
Pulsed drain current: 407A
Power dissipation: 343W
Gate charge: 322nC
Polarisation: unipolar
Technology: SiC
Features of semiconductor devices: Kelvin terminal
Drain current: 107A
Kind of channel: enhancement
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Gate-source voltage: -10...22V
Kind of package: tube
On-state resistance: 29mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NC7SZ74L8X |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; UQFN8; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: UQFN8
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: 7SZ
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; CMOS; 7SZ; SMD; UQFN8; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: UQFN8
Operating temperature: -40...85°C
Supply voltage: 1.65...5.5V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Manufacturer series: 7SZ
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NCP5111DR2G |
|
Hersteller: ONSEMI
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -500...250mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 160ns
Pulse fall time: 75ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge,MOSFET half-bridge; SO8; -500÷250mA
Type of integrated circuit: driver
Topology: IGBT half-bridge; MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -500...250mA
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Impulse rise time: 160ns
Pulse fall time: 75ns
Kind of package: reel; tape
Voltage class: 600V
Protection: undervoltage UVP
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NRVBD650CTT4G-VF01 |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 50V; 3Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Max. load current: 6A
Max. forward impulse current: 75A
Kind of package: reel; tape
Application: automotive industry
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SMD; 50V; 3Ax2; reel,tape
Type of diode: Schottky rectifying
Case: DPAK
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A x2
Semiconductor structure: common cathode; double
Max. forward voltage: 0.9V
Max. load current: 6A
Max. forward impulse current: 75A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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| BSV52 |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 25...120
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 0.2A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.2A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 25...120
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
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| BSV52LT1G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 40...120
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 0.1A; 0.225W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.1A
Power dissipation: 0.225W
Case: SOT23; TO236AB
Current gain: 40...120
Mounting: SMD
Kind of package: reel; tape
Frequency: 400MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
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