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FODM217CR4V onsemi FODM214-D.PDF Description: OPTOISO 3.75KV 1CH TRANS 4-MFP
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Bulk
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-MFP
Current Transfer Ratio (Max): 400% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 200% @ 5mA
Produkt ist nicht verfügbar
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NUF4010MUT2G NUF4010MUT2G onsemi nuf4010mu-d.pdf Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Size / Dimension: 0.071" L x 0.047" W (1.80mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 7pF
Height: 0.022" (0.55mm)
Attenuation Value: -20dB @ 800MHz ~ 5GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 250MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 4
Produkt ist nicht verfügbar
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DM74153N DM74153N onsemi NATLS11548-1.pdf?t.download=true&u=5oefqw Description: IC MULTIPLEXER 2 X 4:1 16-PDIP
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Supplier Device Package: 16-PDIP
Voltage Supply Source: Single Supply
Independent Circuits: 1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: 0°C ~ 70°C
Type: Multiplexer
Circuit: 2 x 4:1
Mounting Type: Through Hole
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FQAF15N70 FQAF15N70 onsemi FQAF15N70.pdf Description: MOSFET N-CH 700V 9.5A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 4.8A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
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NSR20206NXT5G onsemi NSR20206-D.PDF Description: DIODE SCHOTTKY 20V 2A 2DSN
Packaging: Bulk
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: 2-DSN (1.6x0.8)
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 20 V
Produkt ist nicht verfügbar
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MMBTA56 MMBTA56 onsemi MPSA56%2CMMBTA56%2CPZTA56_Feb2015.pdf Description: TRANS PNP 80V 0.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 350 mW
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DM74ALS163BN DM74ALS163BN onsemi DM74ALS161B_2B_3B.pdf Description: IC BINARY COUNTER 4-BIT 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Binary Counter
Reset: Synchronous
Operating Temperature: 0°C ~ 70°C
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-PDIP
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 40 MHz
Number of Bits per Element: 4
Produkt ist nicht verfügbar
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DM74ALS163BMX DM74ALS163BMX onsemi DM74ALS161B_2B_3B.pdf Description: IC BINARY COUNTER 4-BIT 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Synchronous
Operating Temperature: 0°C ~ 70°C
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-SOIC
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 40 MHz
Number of Bits per Element: 4
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DM74ALS163BM DM74ALS163BM onsemi DM74ALS161B_2B_3B.pdf Description: IC BINARY COUNTER 4-BIT 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Synchronous
Operating Temperature: 0°C ~ 70°C
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-SOIC
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 40 MHz
Number of Bits per Element: 4
Produkt ist nicht verfügbar
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SN74LS298N SN74LS298N onsemi sn74ls298 Description: IC MULTIPLEXER 4 X 2:1 16-PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Independent Circuits: 1
Current - Output High, Low: 400µA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-PDIP
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HUFA75344P3 HUFA75344P3 onsemi HUFA75344G3.pdf Description: MOSFET N-CH 55V 75A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 285W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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NVLJWS022N06CLTAG NVLJWS022N06CLTAG onsemi nvljws022n06cl-d.pdf Description: T6 60V LL 2X2 WDFNW6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 77µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Qualification: AEC-Q101
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NVTFS007N08HLTAG NVTFS007N08HLTAG onsemi nvtfs007n08hl-d.pdf Description: MOSFET N-CHANNEL 80V 71A
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 3V @ 270µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V
Qualification: AEC-Q101
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NVTFS007N08HLTAG NVTFS007N08HLTAG onsemi nvtfs007n08hl-d.pdf Description: MOSFET N-CHANNEL 80V 71A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 3V @ 270µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V
Qualification: AEC-Q101
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NVTFWS007N08HLTAG NVTFWS007N08HLTAG onsemi nvtfs007n08hl-d.pdf Description: 80V T8 IN U8FL HEFET PACK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 3V @ 270µA
Supplier Device Package: 8-WDFNW (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V
Qualification: AEC-Q101
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NVTFWS007N08HLTAG NVTFWS007N08HLTAG onsemi nvtfs007n08hl-d.pdf Description: 80V T8 IN U8FL HEFET PACK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 3V @ 270µA
Supplier Device Package: 8-WDFNW (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V
Qualification: AEC-Q101
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TL064CN TL064CN onsemi tl064.pdf?ts=1633830943133&ref_url=https%253A%252F%252Fgoogle.com Description: IC OPAMP JFET 4 CIRCUIT 14DIP
Voltage - Supply Span (Max): 30 V
Voltage - Supply Span (Min): 10 V
Current - Output / Channel: 20 mA
Number of Circuits: 4
Supplier Device Package: 14-PDIP
Voltage - Input Offset: 3 mV
Current - Input Bias: 30 pA
Gain Bandwidth Product: 1 MHz
Slew Rate: 3.5V/µs
Current - Supply: 200µA (x4 Channels)
Operating Temperature: 0°C ~ 70°C
Amplifier Type: J-FET
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Packaging: Tube
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FDB039N06 FDB039N06 onsemi Description: MOSFET N-CH 60V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 75A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 25 V
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FDB039N06 FDB039N06 onsemi Description: MOSFET N-CH 60V 120A TO263
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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NSQA12VAW5T2G NSQA12VAW5T2G onsemi NSQA6V8AW5T2.pdf Description: TVS DIODE 9VWM 23VC SC88A
Power Line Protection: No
Power - Peak Pulse: 20W
Voltage - Clamping (Max) @ Ipp: 23V
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 4
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Voltage - Reverse Standoff (Typ): 9V
Current - Peak Pulse (10/1000µs): 900mA (8/20µs)
Capacitance @ Frequency: 15pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Bulk
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NSQA12VAW5T2 NSQA12VAW5T2 onsemi NSQA6V8AW5T2.pdf Description: TVS DIODE 9VWM 23VC SC88A
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 4
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Voltage - Reverse Standoff (Typ): 9V
Current - Peak Pulse (10/1000µs): 900mA (8/20µs)
Capacitance @ Frequency: 15pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 20W
Voltage - Clamping (Max) @ Ipp: 23V
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2SC4634LS 2SC4634LS onsemi SNYOS20846-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 1500V 0.01A TO220FI
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 100µA, 500µA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200µA, 5V
Frequency - Transition: 6MHz
Supplier Device Package: TO-220FI(LS)
Current - Collector (Ic) (Max): 10 mA
Voltage - Collector Emitter Breakdown (Max): 1500 V
Power - Max: 2 W
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2SC4636LS 2SC4636LS onsemi SNYOS20844-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 1800V 0.01A TO220FI
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 40µA, 200µA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100µA, 5V
Frequency - Transition: 6MHz
Supplier Device Package: TO-220FI(LS)
Current - Collector (Ic) (Max): 10 mA
Voltage - Collector Emitter Breakdown (Max): 1800 V
Power - Max: 2 W
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74VCX16245MTD 74VCX16245MTD onsemi Description: IC TXRX NON-INVERT 3.6V 48TSSOP
Supplier Device Package: 48-TSSOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Packaging: Tube
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1N5227B 1N5227B onsemi 1N5221B-D.PDF Description: DIODE ZENER 3.6V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
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5000+0.043 EUR
10000+0.039 EUR
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FQPF4N90 FQPF4N90 onsemi FQPF4N90.pdf Description: MOSFET N-CH 900V 2.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.25A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
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TIP146G onsemi TIP140-D.PDF Description: TRANS PNP DARL 80V 10A SOT-93
Power - Max: 80 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 10 A
Supplier Device Package: SOT-93
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Current - Collector Cutoff (Max): 2mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-218-3
Packaging: Bulk
Produkt ist nicht verfügbar
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TIP146 onsemi TIP140-D.PDF Description: TRANS PNP DARL 80V 10A SOT-93
Power - Max: 80 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 10 A
Supplier Device Package: SOT-93
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Current - Collector Cutoff (Max): 2mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-218-3
Packaging: Bulk
Produkt ist nicht verfügbar
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SC78117P1 onsemi Description: ANA OP AMP LO POWER
Packaging: Bulk
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FQPF17P06 FQPF17P06 onsemi FQPF17P06.pdf Description: MOSFET P-CH 60V 12A TO220F
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
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ADP3293JCPZ-RL ADP3293JCPZ-RL onsemi adp3293-d.pdf Description: IC REG CTRLR INTEL 3OUT 40LFCSP
Packaging: Bulk
Package / Case: 40-VFQFN Exposed Pad, CSP
Voltage - Output: 0.5V ~ 1.6V
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 6V ~ 14.5V
Operating Temperature: 0°C ~ 85°C
Applications: Controller, Intel Processor
Supplier Device Package: 40-LFCSP (6x6)
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1N5361B 1N5361B onsemi 1n5333b-d.pdf description Description: DIODE ZENER 27V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 20.6 V
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1N756A 1N756A onsemi 1N746A-759A%2C4370A-4372A.pdf Description: DIODE ZENER 8.2V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N756ATR 1N756ATR onsemi 1N746A-759A%2C4370A-4372A.pdf Description: DIODE ZENER 8.2V 500MW DO35
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
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MC74LCX244DT MC74LCX244DT onsemi mc74lcx244-d.pdf Description: IC BUFF NON-INVERT 5.5V 20-TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
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1N6373RL4 1N6373RL4 onsemi 1N6373-6381_ICTE-5-36_Series.pdf Description: TVS DIODE 5VWM 9.4V AXIAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 160A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1N6373 1N6373 onsemi 1N6373-6381_ICTE-5-36_Series.pdf Description: TVS DIODE 5VWM 9.4VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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NLSX5011BMX1TCG NLSX5011BMX1TCG onsemi nlsx5011-d.pdf Description: IC TRANSLTR BIDIRECTIONAL 6ULLGA
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Bulk
Package / Case: 6-XFLGA
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 6-ULLGA (1.2x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
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NLSX5011MUTCG NLSX5011MUTCG onsemi nlsx5011-d.pdf Description: IC TRANSLTR BIDIRECTIONAL 6UDFN
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Bulk
Package / Case: 6-UFDFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 6-UDFN (1.2x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
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NLSX4373MUTAG NLSX4373MUTAG onsemi nlsx4373-d.pdf Description: IC TRANSLTR BIDIRECTIONAL 8UDFN
Features: Auto-Direction Sensing
Packaging: Bulk
Package / Case: 8-UFDFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 20Mbps
Supplier Device Package: 8-UDFN (1.8x1.2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.5 V ~ 5.5 V
Voltage - VCCB: 1.5 V ~ 5.5 V
Number of Circuits: 1
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NLSX3012DR2G NLSX3012DR2G onsemi nlsx3012-d.pdf Description: IC TRANSLTR BIDIRECTIONAL 8SOIC
Features: Auto-Direction Sensing
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Number of Circuits: 1
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NLSX3012DR2G NLSX3012DR2G onsemi nlsx3012-d.pdf Description: IC TRANSLTR BIDIRECTIONAL 8SOIC
Features: Auto-Direction Sensing
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Number of Circuits: 1
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NLSX4014DR2G NLSX4014DR2G onsemi nlsx4014-d.pdf Description: IC TRANSLTR BIDIRECTIONAL 14SOIC
Features: Auto-Direction Sensing
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 14-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.9 V ~ 4.1 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Number of Circuits: 1
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NLSX5012DMR2G NLSX5012DMR2G onsemi nlsx5012-d.pdf Description: IC TRANSLTR BIDIRECTIONAL 8MSOP
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 8-MSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
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NLSX5012DR2G NLSX5012DR2G onsemi nlsx5012-d.pdf Description: IC TRANSLTR BIDIRECTIONAL 8SOIC
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
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NLSX5012DR2G NLSX5012DR2G onsemi nlsx5012-d.pdf Description: IC TRANSLTR BIDIRECTIONAL 8SOIC
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
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NLSX3373MUTAG NLSX3373MUTAG onsemi nlsx3373-d.pdf Description: IC TRANSLTR BIDIRECTIONAL 8UDFN
Features: Auto-Direction Sensing
Packaging: Bulk
Package / Case: 8-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 8Mbps
Supplier Device Package: 8-UDFN (1.8x1.2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.2 V ~ 4.1 V
Voltage - VCCB: 1.65 V ~ 4.5 V
Number of Circuits: 1
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NLSX5004MUTAG NLSX5004MUTAG onsemi Description: IC TRANSLTR BIDIRECTIONAL 12UQFN
Packaging: Tape & Reel (TR)
Package / Case: 12-UFQFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 12-UQFN (1.7x2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.9 V ~ 3.6 V
Voltage - VCCB: 0.9 V ~ 3.6 V
Number of Circuits: 1
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NLSX4402FMUTAG NLSX4402FMUTAG onsemi NLSX4402-D.PDF Description: 2-BIT 20 MB/S DUAL-SUPPLY LEVEL
Packaging: Bulk
Package / Case: 8-UFDFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 20Mbps
Supplier Device Package: 8-UDFN (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.5 V ~ 5.5 V
Voltage - VCCB: 1.5 V ~ 5.5 V
Number of Circuits: 1
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AR0136AT3B00XUEA0-TL-TPBR onsemi Description: MODULE
Packaging: Bulk
Produkt ist nicht verfügbar
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1N4151 1N4151 onsemi FAIRS22231-1.pdf?t.download=true&u=5oefqw 11580-lds-0239-datasheet 1n4148.pdf Description: DIODE STANDARD 75V 150MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
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MC74HC540ADTR2G-Q MC74HC540ADTR2G-Q onsemi mc74hc540a-d.pdf Description: IC BUFF 2V/6V 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-TSSOP
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P6KE68ARL P6KE68ARL onsemi P6KE6.8A_Series.pdf Description: TVS DIODE 58.1VWM 92VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 600W
Power Line Protection: No
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MPQ6842 MPQ6842 onsemi ONSMS03977-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN/PNP 30V 200MA 14-PDIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Transistor Type: 1 NPN, 1 PNP Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 1V
Frequency - Transition: 350MHz
Supplier Device Package: 14-PDIP
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NC7SZ10P6X-L22347 NC7SZ10P6X-L22347 onsemi nc7sz10-d.pdf Description: IC GATE NAND 1CH 3-INP SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: SC-88/SC70-6/SOT-363
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
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FJD3076TM FJD3076TM onsemi fjd3076-d.pdf Description: TRANS NPN 32V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 500mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 1 W
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NSB4904DW1T2G NSB4904DW1T2G onsemi NSB4904DW1T1G-D.PDF Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Produkt ist nicht verfügbar
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NTBL032N065M3S NTBL032N065M3S onsemi ntbl032n065m3s-d.pdf Description: SILICON CARBIDE (SIC) MOSFET ELI
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1396 pF @ 400 V
auf Bestellung 1909 Stücke:
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2+12.74 EUR
10+8.69 EUR
100+6.39 EUR
500+5.55 EUR
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NTH4L032N065M3S NTH4L032N065M3S onsemi nth4l032n065m3s-d.pdf Description: SIC MOS TO247-4L 32MOHM 650V M3S
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V
auf Bestellung 460 Stücke:
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2+14.8 EUR
30+8.74 EUR
120+7.41 EUR
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NVBG032N065M3S NVBG032N065M3S onsemi nvbg032n065m3s-d.pdf Description: SIC MOS D2PAK-7L 32MOHM 650V M3S
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
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800+10.33 EUR
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FODM217CR4V FODM214-D.PDF
Hersteller: onsemi
Description: OPTOISO 3.75KV 1CH TRANS 4-MFP
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -55°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Bulk
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Turn On / Turn Off Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-MFP
Current Transfer Ratio (Max): 400% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 200% @ 5mA
Produkt ist nicht verfügbar
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NUF4010MUT2G nuf4010mu-d.pdf
NUF4010MUT2G
Hersteller: onsemi
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Size / Dimension: 0.071" L x 0.047" W (1.80mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 7pF
Height: 0.022" (0.55mm)
Attenuation Value: -20dB @ 800MHz ~ 5GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 250MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 4
Produkt ist nicht verfügbar
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DM74153N NATLS11548-1.pdf?t.download=true&u=5oefqw
DM74153N
Hersteller: onsemi
Description: IC MULTIPLEXER 2 X 4:1 16-PDIP
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Supplier Device Package: 16-PDIP
Voltage Supply Source: Single Supply
Independent Circuits: 1
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: 0°C ~ 70°C
Type: Multiplexer
Circuit: 2 x 4:1
Mounting Type: Through Hole
Produkt ist nicht verfügbar
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FQAF15N70 FQAF15N70.pdf
FQAF15N70
Hersteller: onsemi
Description: MOSFET N-CH 700V 9.5A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 4.8A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Produkt ist nicht verfügbar
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NSR20206NXT5G NSR20206-D.PDF
Hersteller: onsemi
Description: DIODE SCHOTTKY 20V 2A 2DSN
Packaging: Bulk
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: 2-DSN (1.6x0.8)
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 20 V
Produkt ist nicht verfügbar
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MMBTA56 MPSA56%2CMMBTA56%2CPZTA56_Feb2015.pdf
MMBTA56
Hersteller: onsemi
Description: TRANS PNP 80V 0.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
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DM74ALS163BN DM74ALS161B_2B_3B.pdf
DM74ALS163BN
Hersteller: onsemi
Description: IC BINARY COUNTER 4-BIT 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Binary Counter
Reset: Synchronous
Operating Temperature: 0°C ~ 70°C
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-PDIP
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 40 MHz
Number of Bits per Element: 4
Produkt ist nicht verfügbar
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DM74ALS163BMX DM74ALS161B_2B_3B.pdf
DM74ALS163BMX
Hersteller: onsemi
Description: IC BINARY COUNTER 4-BIT 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Synchronous
Operating Temperature: 0°C ~ 70°C
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-SOIC
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 40 MHz
Number of Bits per Element: 4
Produkt ist nicht verfügbar
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DM74ALS163BM DM74ALS161B_2B_3B.pdf
DM74ALS163BM
Hersteller: onsemi
Description: IC BINARY COUNTER 4-BIT 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Synchronous
Operating Temperature: 0°C ~ 70°C
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-SOIC
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 40 MHz
Number of Bits per Element: 4
Produkt ist nicht verfügbar
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SN74LS298N sn74ls298
SN74LS298N
Hersteller: onsemi
Description: IC MULTIPLEXER 4 X 2:1 16-PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Independent Circuits: 1
Current - Output High, Low: 400µA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-PDIP
auf Bestellung 4439 Stücke:
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AnzahlPreis
156+2.89 EUR
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HUFA75344P3 HUFA75344G3.pdf
HUFA75344P3
Hersteller: onsemi
Description: MOSFET N-CH 55V 75A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 20 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 285W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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NVLJWS022N06CLTAG nvljws022n06cl-d.pdf
NVLJWS022N06CLTAG
Hersteller: onsemi
Description: T6 60V LL 2X2 WDFNW6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 77µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 11402 Stücke:
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AnzahlPreis
19+0.93 EUR
27+0.67 EUR
30+0.6 EUR
100+0.52 EUR
250+0.49 EUR
500+0.46 EUR
1000+0.45 EUR
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NVTFS007N08HLTAG nvtfs007n08hl-d.pdf
NVTFS007N08HLTAG
Hersteller: onsemi
Description: MOSFET N-CHANNEL 80V 71A
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 3V @ 270µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVTFS007N08HLTAG nvtfs007n08hl-d.pdf
NVTFS007N08HLTAG
Hersteller: onsemi
Description: MOSFET N-CHANNEL 80V 71A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 3V @ 270µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1346 Stücke:
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AnzahlPreis
7+2.73 EUR
11+1.74 EUR
100+1.17 EUR
500+0.93 EUR
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NVTFWS007N08HLTAG nvtfs007n08hl-d.pdf
NVTFWS007N08HLTAG
Hersteller: onsemi
Description: 80V T8 IN U8FL HEFET PACK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 3V @ 270µA
Supplier Device Package: 8-WDFNW (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
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AnzahlPreis
1500+0.77 EUR
3000+0.75 EUR
4500+0.74 EUR
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NVTFWS007N08HLTAG nvtfs007n08hl-d.pdf
NVTFWS007N08HLTAG
Hersteller: onsemi
Description: 80V T8 IN U8FL HEFET PACK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 3V @ 270µA
Supplier Device Package: 8-WDFNW (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 5786 Stücke:
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AnzahlPreis
12+1.57 EUR
16+1.13 EUR
25+1.02 EUR
100+0.9 EUR
250+0.84 EUR
500+0.81 EUR
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TL064CN tl064.pdf?ts=1633830943133&ref_url=https%253A%252F%252Fgoogle.com
TL064CN
Hersteller: onsemi
Description: IC OPAMP JFET 4 CIRCUIT 14DIP
Voltage - Supply Span (Max): 30 V
Voltage - Supply Span (Min): 10 V
Current - Output / Channel: 20 mA
Number of Circuits: 4
Supplier Device Package: 14-PDIP
Voltage - Input Offset: 3 mV
Current - Input Bias: 30 pA
Gain Bandwidth Product: 1 MHz
Slew Rate: 3.5V/µs
Current - Supply: 200µA (x4 Channels)
Operating Temperature: 0°C ~ 70°C
Amplifier Type: J-FET
Mounting Type: Through Hole
Package / Case: 14-DIP (0.300", 7.62mm)
Packaging: Tube
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559+0.82 EUR
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FDB039N06
FDB039N06
Hersteller: onsemi
Description: MOSFET N-CH 60V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 75A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 25 V
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FDB039N06
FDB039N06
Hersteller: onsemi
Description: MOSFET N-CH 60V 120A TO263
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 231W (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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NSQA12VAW5T2G NSQA6V8AW5T2.pdf
NSQA12VAW5T2G
Hersteller: onsemi
Description: TVS DIODE 9VWM 23VC SC88A
Power Line Protection: No
Power - Peak Pulse: 20W
Voltage - Clamping (Max) @ Ipp: 23V
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 4
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Voltage - Reverse Standoff (Typ): 9V
Current - Peak Pulse (10/1000µs): 900mA (8/20µs)
Capacitance @ Frequency: 15pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Bulk
auf Bestellung 108269 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2273+0.2 EUR
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NSQA12VAW5T2 NSQA6V8AW5T2.pdf
NSQA12VAW5T2
Hersteller: onsemi
Description: TVS DIODE 9VWM 23VC SC88A
Voltage - Breakdown (Min): 11.4V
Unidirectional Channels: 4
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Voltage - Reverse Standoff (Typ): 9V
Current - Peak Pulse (10/1000µs): 900mA (8/20µs)
Capacitance @ Frequency: 15pF @ 1MHz
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Bulk
Power Line Protection: No
Power - Peak Pulse: 20W
Voltage - Clamping (Max) @ Ipp: 23V
auf Bestellung 99000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
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2SC4634LS SNYOS20846-1.pdf?t.download=true&u=5oefqw
2SC4634LS
Hersteller: onsemi
Description: TRANS NPN 1500V 0.01A TO220FI
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 100µA, 500µA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200µA, 5V
Frequency - Transition: 6MHz
Supplier Device Package: TO-220FI(LS)
Current - Collector (Ic) (Max): 10 mA
Voltage - Collector Emitter Breakdown (Max): 1500 V
Power - Max: 2 W
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2SC4636LS SNYOS20844-1.pdf?t.download=true&u=5oefqw
2SC4636LS
Hersteller: onsemi
Description: TRANS NPN 1800V 0.01A TO220FI
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 40µA, 200µA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100µA, 5V
Frequency - Transition: 6MHz
Supplier Device Package: TO-220FI(LS)
Current - Collector (Ic) (Max): 10 mA
Voltage - Collector Emitter Breakdown (Max): 1800 V
Power - Max: 2 W
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74VCX16245MTD
74VCX16245MTD
Hersteller: onsemi
Description: IC TXRX NON-INVERT 3.6V 48TSSOP
Supplier Device Package: 48-TSSOP
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 1.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Packaging: Tube
auf Bestellung 143 Stücke:
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AnzahlPreis
5+3.94 EUR
10+3.54 EUR
25+3.34 EUR
100+2.85 EUR
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1N5227B 1N5221B-D.PDF
1N5227B
Hersteller: onsemi
Description: DIODE ZENER 3.6V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
auf Bestellung 58658 Stücke:
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72+0.25 EUR
120+0.15 EUR
194+0.091 EUR
500+0.066 EUR
1000+0.058 EUR
2000+0.051 EUR
5000+0.043 EUR
10000+0.039 EUR
50000+0.031 EUR
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FQPF4N90 FQPF4N90.pdf
FQPF4N90
Hersteller: onsemi
Description: MOSFET N-CH 900V 2.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.25A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar
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TIP146G TIP140-D.PDF
Hersteller: onsemi
Description: TRANS PNP DARL 80V 10A SOT-93
Power - Max: 80 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 10 A
Supplier Device Package: SOT-93
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Current - Collector Cutoff (Max): 2mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-218-3
Packaging: Bulk
Produkt ist nicht verfügbar
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TIP146 TIP140-D.PDF
Hersteller: onsemi
Description: TRANS PNP DARL 80V 10A SOT-93
Power - Max: 80 W
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 10 A
Supplier Device Package: SOT-93
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Current - Collector Cutoff (Max): 2mA
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-218-3
Packaging: Bulk
Produkt ist nicht verfügbar
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SC78117P1
Hersteller: onsemi
Description: ANA OP AMP LO POWER
Packaging: Bulk
auf Bestellung 4000 Stücke:
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AnzahlPreis
358+1.3 EUR
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FQPF17P06 FQPF17P06.pdf
FQPF17P06
Hersteller: onsemi
Description: MOSFET P-CH 60V 12A TO220F
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Produkt ist nicht verfügbar
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ADP3293JCPZ-RL adp3293-d.pdf
ADP3293JCPZ-RL
Hersteller: onsemi
Description: IC REG CTRLR INTEL 3OUT 40LFCSP
Packaging: Bulk
Package / Case: 40-VFQFN Exposed Pad, CSP
Voltage - Output: 0.5V ~ 1.6V
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 6V ~ 14.5V
Operating Temperature: 0°C ~ 85°C
Applications: Controller, Intel Processor
Supplier Device Package: 40-LFCSP (6x6)
auf Bestellung 78814 Stücke:
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268+1.73 EUR
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1N5361B description 1n5333b-d.pdf
1N5361B
Hersteller: onsemi
Description: DIODE ZENER 27V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 20.6 V
Produkt ist nicht verfügbar
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1N756A 1N746A-759A%2C4370A-4372A.pdf
1N756A
Hersteller: onsemi
Description: DIODE ZENER 8.2V 500MW DO35
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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1N756ATR 1N746A-759A%2C4370A-4372A.pdf
1N756ATR
Hersteller: onsemi
Description: DIODE ZENER 8.2V 500MW DO35
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 8 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Produkt ist nicht verfügbar
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MC74LCX244DT mc74lcx244-d.pdf
MC74LCX244DT
Hersteller: onsemi
Description: IC BUFF NON-INVERT 5.5V 20-TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
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AnzahlPreis
1397+0.32 EUR
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1N6373RL4 1N6373-6381_ICTE-5-36_Series.pdf
1N6373RL4
Hersteller: onsemi
Description: TVS DIODE 5VWM 9.4V AXIAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 160A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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1N6373 1N6373-6381_ICTE-5-36_Series.pdf
1N6373
Hersteller: onsemi
Description: TVS DIODE 5VWM 9.4VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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NLSX5011BMX1TCG nlsx5011-d.pdf
NLSX5011BMX1TCG
Hersteller: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 6ULLGA
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Bulk
Package / Case: 6-XFLGA
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 6-ULLGA (1.2x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
auf Bestellung 4400 Stücke:
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AnzahlPreis
728+0.63 EUR
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NLSX5011MUTCG nlsx5011-d.pdf
NLSX5011MUTCG
Hersteller: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 6UDFN
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Bulk
Package / Case: 6-UFDFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 6-UDFN (1.2x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
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AnzahlPreis
380+1.22 EUR
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NLSX4373MUTAG nlsx4373-d.pdf
NLSX4373MUTAG
Hersteller: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8UDFN
Features: Auto-Direction Sensing
Packaging: Bulk
Package / Case: 8-UFDFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 20Mbps
Supplier Device Package: 8-UDFN (1.8x1.2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.5 V ~ 5.5 V
Voltage - VCCB: 1.5 V ~ 5.5 V
Number of Circuits: 1
auf Bestellung 3484038 Stücke:
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AnzahlPreis
469+0.99 EUR
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NLSX3012DR2G nlsx3012-d.pdf
NLSX3012DR2G
Hersteller: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8SOIC
Features: Auto-Direction Sensing
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Number of Circuits: 1
Produkt ist nicht verfügbar
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NLSX3012DR2G nlsx3012-d.pdf
NLSX3012DR2G
Hersteller: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8SOIC
Features: Auto-Direction Sensing
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Number of Circuits: 1
auf Bestellung 16117 Stücke:
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AnzahlPreis
389+1.19 EUR
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NLSX4014DR2G nlsx4014-d.pdf
NLSX4014DR2G
Hersteller: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 14SOIC
Features: Auto-Direction Sensing
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 14-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.9 V ~ 4.1 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Number of Circuits: 1
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AnzahlPreis
283+1.64 EUR
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NLSX5012DMR2G nlsx5012-d.pdf
NLSX5012DMR2G
Hersteller: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8MSOP
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 8-MSOP
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
auf Bestellung 1167 Stücke:
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AnzahlPreis
5+4.22 EUR
10+3.8 EUR
25+3.58 EUR
100+3.05 EUR
250+2.87 EUR
500+2.51 EUR
1000+2.08 EUR
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NLSX5012DR2G nlsx5012-d.pdf
NLSX5012DR2G
Hersteller: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8SOIC
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
Produkt ist nicht verfügbar
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NLSX5012DR2G nlsx5012-d.pdf
NLSX5012DR2G
Hersteller: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8SOIC
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 8-SOIC
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
auf Bestellung 2433 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+5.09 EUR
10+3.25 EUR
25+2.76 EUR
100+2.22 EUR
250+1.95 EUR
500+1.78 EUR
1000+1.65 EUR
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NLSX3373MUTAG nlsx3373-d.pdf
NLSX3373MUTAG
Hersteller: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8UDFN
Features: Auto-Direction Sensing
Packaging: Bulk
Package / Case: 8-UFDFN
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 8Mbps
Supplier Device Package: 8-UDFN (1.8x1.2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.2 V ~ 4.1 V
Voltage - VCCB: 1.65 V ~ 4.5 V
Number of Circuits: 1
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AnzahlPreis
222+2.09 EUR
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NLSX5004MUTAG
NLSX5004MUTAG
Hersteller: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 12UQFN
Packaging: Tape & Reel (TR)
Package / Case: 12-UFQFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 12-UQFN (1.7x2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 0.9 V ~ 3.6 V
Voltage - VCCB: 0.9 V ~ 3.6 V
Number of Circuits: 1
auf Bestellung 21000 Stücke:
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AnzahlPreis
3000+0.34 EUR
6000+0.33 EUR
15000+0.32 EUR
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NLSX4402FMUTAG NLSX4402-D.PDF
NLSX4402FMUTAG
Hersteller: onsemi
Description: 2-BIT 20 MB/S DUAL-SUPPLY LEVEL
Packaging: Bulk
Package / Case: 8-UFDFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 20Mbps
Supplier Device Package: 8-UDFN (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.5 V ~ 5.5 V
Voltage - VCCB: 1.5 V ~ 5.5 V
Number of Circuits: 1
Produkt ist nicht verfügbar
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AR0136AT3B00XUEA0-TL-TPBR
Hersteller: onsemi
Description: MODULE
Packaging: Bulk
Produkt ist nicht verfügbar
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1N4151 FAIRS22231-1.pdf?t.download=true&u=5oefqw 11580-lds-0239-datasheet 1n4148.pdf
1N4151
Hersteller: onsemi
Description: DIODE STANDARD 75V 150MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Produkt ist nicht verfügbar
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MC74HC540ADTR2G-Q mc74hc540a-d.pdf
MC74HC540ADTR2G-Q
Hersteller: onsemi
Description: IC BUFF 2V/6V 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-TSSOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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P6KE68ARL P6KE6.8A_Series.pdf
P6KE68ARL
Hersteller: onsemi
Description: TVS DIODE 58.1VWM 92VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 6.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 58.1V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 92V
Power - Peak Pulse: 600W
Power Line Protection: No
Produkt ist nicht verfügbar
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MPQ6842 ONSMS03977-1.pdf?t.download=true&u=5oefqw
MPQ6842
Hersteller: onsemi
Description: TRANS NPN/PNP 30V 200MA 14-PDIP
Packaging: Bulk
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Transistor Type: 1 NPN, 1 PNP Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 500mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 30V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 1V
Frequency - Transition: 350MHz
Supplier Device Package: 14-PDIP
auf Bestellung 8746 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
202+2.26 EUR
Mindestbestellmenge: 202 Stücke
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NC7SZ10P6X-L22347 nc7sz10-d.pdf
NC7SZ10P6X-L22347
Hersteller: onsemi
Description: IC GATE NAND 1CH 3-INP SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: SC-88/SC70-6/SOT-363
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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FJD3076TM fjd3076-d.pdf
FJD3076TM
Hersteller: onsemi
Description: TRANS NPN 32V 2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 200mA, 2A
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 500mA, 3V
Frequency - Transition: 100MHz
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 32 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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NSB4904DW1T2G NSB4904DW1T1G-D.PDF
NSB4904DW1T2G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Produkt ist nicht verfügbar
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NTBL032N065M3S ntbl032n065m3s-d.pdf
NTBL032N065M3S
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET ELI
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1396 pF @ 400 V
auf Bestellung 1909 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+12.74 EUR
10+8.69 EUR
100+6.39 EUR
500+5.55 EUR
Mindestbestellmenge: 2 Stücke
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NTH4L032N065M3S nth4l032n065m3s-d.pdf
NTH4L032N065M3S
Hersteller: onsemi
Description: SIC MOS TO247-4L 32MOHM 650V M3S
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1410 pF @ 400 V
auf Bestellung 460 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+14.8 EUR
30+8.74 EUR
120+7.41 EUR
Mindestbestellmenge: 2 Stücke
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NVBG032N065M3S nvbg032n065m3s-d.pdf
NVBG032N065M3S
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 32MOHM 650V M3S
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 15A, 18V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 7.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1409 pF @ 400 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
800+10.33 EUR
Mindestbestellmenge: 800 Stücke
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