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NTMFD001N03P9 | onsemi |
Description: MOSFET 2N-CH 30V 11A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 960mW (Ta), 25W (Tc), 1.04W (Ta), 41W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 57A (Tc), 25A (Ta), 165A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1224pF @ 15V, 6575pF @ 15V Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V, 1mOhm @ 40A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, 43nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFD001N03P9 | onsemi |
Description: MOSFET 2N-CH 30V 11A 8PQFNPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 960mW (Ta), 25W (Tc), 1.04W (Ta), 41W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 57A (Tc), 25A (Ta), 165A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1224pF @ 15V, 6575pF @ 15V Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V, 1mOhm @ 40A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, 43nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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ECH8320-TL-H | onsemi |
Description: MOSFET P-CH 20V 9.5A 8ECHPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 5A, 4.5V Power Dissipation (Max): 1.6W (Ta) Supplier Device Package: 8-ECH Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V |
Produkt ist nicht verfügbar |
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ECH8320-TL-H | onsemi |
Description: MOSFET P-CH 20V 9.5A 8ECHPackaging: Bulk Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 5A, 4.5V Power Dissipation (Max): 1.6W (Ta) Supplier Device Package: 8-ECH Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V |
auf Bestellung 122629 Stücke: Lieferzeit 10-14 Tag (e) |
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ECH8306-TL-E | onsemi |
Description: MOSFET P-CH 100V 2A 8ECH Packaging: Bulk Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 225mOhm @ 1A, 10V Power Dissipation (Max): 1.6W (Ta) Supplier Device Package: 8-ECH Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 20 V |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| ECH8309-TL-H | onsemi |
Description: P-CHANNEL POWER MOSFET -12V, -9.Packaging: Bulk Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.5W (Ta) Supplier Device Package: 8-ECH Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 6 V |
auf Bestellung 142845 Stücke: Lieferzeit 10-14 Tag (e) |
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MMDL770T1 | onsemi |
Description: DIODE SCHOTTKY 70V SOD323Packaging: Bulk Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 0.5pF @ 20V, 1MHz Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Current - Reverse Leakage @ Vr: 200 nA @ 35 V |
Produkt ist nicht verfügbar |
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MC74HC03ANG | onsemi |
Description: IC GATE NAND 4CH 2-INP 14DIPPackaging: Tube Features: Open Drain Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Logic Type: NAND Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: -, 5.2mA Number of Inputs: 2 Supplier Device Package: 14-PDIP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.5V ~ 1.8V Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 1 µA |
auf Bestellung 27731 Stücke: Lieferzeit 10-14 Tag (e) |
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SVC203SPA | onsemi |
Description: DIODE VARACTOR 16V DUAL 3-SPAPackaging: Bulk Package / Case: 3-SSIP Mounting Type: Through Hole Diode Type: 1 Pair Common Cathode Operating Temperature: 125°C (TJ) Q @ Vr, F: 60 @ 3V, 100MHz Capacitance Ratio Condition: C3/C8 Supplier Device Package: 3-SPA Voltage - Peak Reverse (Max): 16 V Capacitance Ratio: 3.0 |
auf Bestellung 180999 Stücke: Lieferzeit 10-14 Tag (e) |
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NUF3101FCT1G | onsemi |
Description: FILTER RC(PI) 300MHZ ESD SMDPackaging: Bulk Package / Case: 8-WFBGA, FCBGA Size / Dimension: 0.061" L x 0.061" W (1.55mm x 1.55mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 47Ohms, 100Ohms, C = 40pF (Total) Height: 0.028" (0.70mm) Attenuation Value: -25dB @ 800MHz ~ 2.2GHz Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Center / Cutoff Frequency: 300MHz (Cutoff) Resistance - Channel (Ohms): 47, 100 ESD Protection: Yes Number of Channels: 3 |
auf Bestellung 361043 Stücke: Lieferzeit 10-14 Tag (e) |
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BC237A | onsemi |
Description: TRANS NPN 45V 0.1A TO-92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 500 mW |
auf Bestellung 3692 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP140AMXD330TCG | onsemi |
Description: IC REG LINEAR 3.3V 150MA 4-XDFNPackaging: Bulk Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 75 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-XDFN (1x1) Voltage - Output (Min/Fixed): 3.3V Control Features: Enable PSRR: 62dB ~ 55dB (100Hz ~ 1kHz) Voltage Dropout (Max): 0.22V @ 150mA Protection Features: Over Temperature |
auf Bestellung 114000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP140AMXD180TCG | onsemi |
Description: IC REG LINEAR 1.8V 150MA 4-XDFNPackaging: Bulk Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 75 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-XDFN (1x1) Voltage - Output (Min/Fixed): 1.8V Control Features: Enable PSRR: 62dB ~ 55dB (100Hz ~ 1kHz) Voltage Dropout (Max): 0.39V @ 150mA Protection Features: Over Temperature |
auf Bestellung 129000 Stücke: Lieferzeit 10-14 Tag (e) |
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1N757ATR | onsemi |
Description: DIODE ZENER 9.1V 500MW DO35Packaging: Tape & Reel (TR) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 1 V |
Produkt ist nicht verfügbar |
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NCV7041DM3G100R2G | onsemi |
Description: CURRENT SENSE AMPLIFIER, 80V COMPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Amplifier Type: Current Sense Operating Temperature: -40°C ~ 150°C (TA) Current - Supply: 1.5mA Slew Rate: 1V/µs Gain Bandwidth Product: 100 kHz Current - Input Bias: 200 µA Voltage - Input Offset: 100 µV Supplier Device Package: 8-MSOP Number of Circuits: 1 -3db Bandwidth: 80 kHz Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 5.5 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV7041DM3G100R2G | onsemi |
Description: CURRENT SENSE AMPLIFIER, 80V COMPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Amplifier Type: Current Sense Operating Temperature: -40°C ~ 150°C (TA) Current - Supply: 1.5mA Slew Rate: 1V/µs Gain Bandwidth Product: 100 kHz Current - Input Bias: 200 µA Voltage - Input Offset: 100 µV Supplier Device Package: 8-MSOP Number of Circuits: 1 -3db Bandwidth: 80 kHz Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 5.5 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV7041DM3G050R2G | onsemi |
Description: CURRENT SENSE AMPLIFIER, 80V COMPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Amplifier Type: Current Sense Operating Temperature: -40°C ~ 150°C (TA) Current - Supply: 1.5mA Slew Rate: 1V/µs Gain Bandwidth Product: 100 kHz Current - Input Bias: 200 µA Voltage - Input Offset: 100 µV Supplier Device Package: 8-MSOP Number of Circuits: 1 -3db Bandwidth: 80 kHz Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 5.5 V |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV7041DM3G050R2G | onsemi |
Description: CURRENT SENSE AMPLIFIER, 80V COMPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Amplifier Type: Current Sense Operating Temperature: -40°C ~ 150°C (TA) Current - Supply: 1.5mA Slew Rate: 1V/µs Gain Bandwidth Product: 100 kHz Current - Input Bias: 200 µA Voltage - Input Offset: 100 µV Supplier Device Package: 8-MSOP Number of Circuits: 1 -3db Bandwidth: 80 kHz Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 5.5 V |
auf Bestellung 5413 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV7041DM3G014R2G | onsemi |
Description: CURRENT SENSE AMPLIFIER, 80V COMPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Amplifier Type: Current Sense Operating Temperature: -40°C ~ 150°C (TA) Current - Supply: 1.5mA Slew Rate: 1V/µs Gain Bandwidth Product: 100 kHz Current - Input Bias: 200 µA Voltage - Input Offset: 100 µV Supplier Device Package: 8-MSOP Number of Circuits: 1 -3db Bandwidth: 80 kHz Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 5.5 V |
Produkt ist nicht verfügbar |
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NCV7041DM3G014R2G | onsemi |
Description: CURRENT SENSE AMPLIFIER, 80V COMPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Amplifier Type: Current Sense Operating Temperature: -40°C ~ 150°C (TA) Current - Supply: 1.5mA Slew Rate: 1V/µs Gain Bandwidth Product: 100 kHz Current - Input Bias: 200 µA Voltage - Input Offset: 100 µV Supplier Device Package: 8-MSOP Number of Circuits: 1 -3db Bandwidth: 80 kHz Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 5.5 V |
Produkt ist nicht verfügbar |
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NCV7041DM3G020R2G | onsemi |
Description: CURRENT SENSE AMPLIFIER, 80V COMPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Amplifier Type: Current Sense Operating Temperature: -40°C ~ 150°C (TA) Current - Supply: 1.5mA Slew Rate: 1V/µs Gain Bandwidth Product: 100 kHz Current - Input Bias: 200 µA Voltage - Input Offset: 100 µV Supplier Device Package: 8-MSOP Number of Circuits: 1 -3db Bandwidth: 80 kHz Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 5.5 V |
Produkt ist nicht verfügbar |
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NCV7041DM3G020R2G | onsemi |
Description: CURRENT SENSE AMPLIFIER, 80V COMPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Push-Pull Mounting Type: Surface Mount Amplifier Type: Current Sense Operating Temperature: -40°C ~ 150°C (TA) Current - Supply: 1.5mA Slew Rate: 1V/µs Gain Bandwidth Product: 100 kHz Current - Input Bias: 200 µA Voltage - Input Offset: 100 µV Supplier Device Package: 8-MSOP Number of Circuits: 1 -3db Bandwidth: 80 kHz Voltage - Supply Span (Min): 3 V Voltage - Supply Span (Max): 5.5 V |
Produkt ist nicht verfügbar |
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TS393DR2G | onsemi |
Description: IC COMPARATOR 2 GEN PUR 8SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Elements: 2 Type: General Purpose Operating Temperature: -40°C ~ 125°C Voltage - Supply, Single/Dual (±): 2.7V ~ 16V Supplier Device Package: 8-SOIC Propagation Delay (Max): 2.1µs Current - Quiescent (Max): 15µA Voltage - Input Offset (Max): 1.4mV (Typ) Current - Input Bias (Max): 600pA Current - Output (Typ): 1mA CMRR, PSRR (Typ): 71dB CMRR, 80dB PSRR |
auf Bestellung 405715 Stücke: Lieferzeit 10-14 Tag (e) |
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| FODM217CR4V | onsemi |
Description: OPTOISO 3.75KV 1CH TRANS 4-MFPPackaging: Bulk Package / Case: 4-SOIC (0.173", 4.40mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 200% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 400% @ 5mA Supplier Device Package: 4-MFP Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 3µs, 3µs Rise / Fall Time (Typ): 3µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
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NUF4010MUT2G | onsemi |
Description: FILTER RC(PI) 100 OHMS ESD SMDPackaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Size / Dimension: 0.071" L x 0.047" W (1.80mm x 1.20mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 100Ohms, C = 7pF Height: 0.022" (0.55mm) Attenuation Value: -20dB @ 800MHz ~ 5GHz Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Center / Cutoff Frequency: 250MHz (Cutoff) Resistance - Channel (Ohms): 100 ESD Protection: Yes Number of Channels: 4 |
Produkt ist nicht verfügbar |
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DM74153N | onsemi |
Description: IC MULTIPLEXER 2 X 4:1 16-PDIPPackaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Circuit: 2 x 4:1 Type: Multiplexer Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Independent Circuits: 1 Voltage Supply Source: Single Supply Supplier Device Package: 16-PDIP |
Produkt ist nicht verfügbar |
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FQAF15N70 | onsemi |
Description: MOSFET N-CH 700V 9.5A TO3PFPackaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc) Rds On (Max) @ Id, Vgs: 560mOhm @ 4.8A, 10V Power Dissipation (Max): 120W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V |
Produkt ist nicht verfügbar |
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| NSR20206NXT5G | onsemi |
Description: DIODE SCHOTTKY 20V 2A 2DSNPackaging: Bulk Package / Case: 0603 (1608 Metric) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Schottky Capacitance @ Vr, F: 140pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: 2-DSN (1.6x0.8) Operating Temperature - Junction: 150°C Voltage - DC Reverse (Vr) (Max): 20 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A Current - Reverse Leakage @ Vr: 150 µA @ 20 V |
Produkt ist nicht verfügbar |
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MMBTA56 | onsemi |
Description: TRANS PNP 80V 0.5A SOT-23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 50MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 350 mW |
Produkt ist nicht verfügbar |
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MJD340T4 | onsemi |
Description: TRANS NPN 300V 0.5A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: DPAK Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 15 W |
Produkt ist nicht verfügbar |
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DM74ALS163BN | onsemi |
Description: IC BINARY COUNTER 4-BIT 16DIPPackaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Number of Elements: 1 Logic Type: Binary Counter Reset: Synchronous Operating Temperature: 0°C ~ 70°C Direction: Up Trigger Type: Positive Edge Timing: Synchronous Supplier Device Package: 16-PDIP Voltage - Supply: 4.5 V ~ 5.5 V Count Rate: 40 MHz Number of Bits per Element: 4 |
Produkt ist nicht verfügbar |
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DM74ALS163BMX | onsemi |
Description: IC BINARY COUNTER 4-BIT 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Binary Counter Reset: Synchronous Operating Temperature: 0°C ~ 70°C Direction: Up Trigger Type: Positive Edge Timing: Synchronous Supplier Device Package: 16-SOIC Voltage - Supply: 4.5 V ~ 5.5 V Count Rate: 40 MHz Number of Bits per Element: 4 |
Produkt ist nicht verfügbar |
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DM74ALS163BM | onsemi |
Description: IC BINARY COUNTER 4-BIT 16SOICPackaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Binary Counter Reset: Synchronous Operating Temperature: 0°C ~ 70°C Direction: Up Trigger Type: Positive Edge Timing: Synchronous Supplier Device Package: 16-SOIC Voltage - Supply: 4.5 V ~ 5.5 V Count Rate: 40 MHz Number of Bits per Element: 4 |
Produkt ist nicht verfügbar |
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SN74LS298N | onsemi |
Description: IC MULTIPLEXER 4 X 2:1 16-PDIPPackaging: Tube Package / Case: 16-DIP (0.300", 7.62mm) Mounting Type: Through Hole Circuit: 4 x 2:1 Type: Multiplexer Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.75V ~ 5.25V Independent Circuits: 1 Current - Output High, Low: 400µA, 8mA Voltage Supply Source: Single Supply Supplier Device Package: 16-PDIP |
auf Bestellung 4439 Stücke: Lieferzeit 10-14 Tag (e) |
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HUFA75344P3 | onsemi |
Description: MOSFET N-CH 55V 75A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V Power Dissipation (Max): 285W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V |
Produkt ist nicht verfügbar |
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NVLJWS022N06CLTAG | onsemi |
Description: T6 60V LL 2X2 WDFNW6Packaging: Cut Tape (CT) Package / Case: 6-PowerWDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V Power Dissipation (Max): 2.4W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 2V @ 77µA Supplier Device Package: 6-WDFNW (2.05x2.05) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 11402 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS007N08HLTAG | onsemi |
Description: MOSFET N-CHANNEL 80V 71APackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V Power Dissipation (Max): 3.3W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 3V @ 270µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVTFS007N08HLTAG | onsemi |
Description: MOSFET N-CHANNEL 80V 71APackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V Power Dissipation (Max): 3.3W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 3V @ 270µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 1346 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS007N08HLTAG | onsemi |
Description: 80V T8 IN U8FL HEFET PACKPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V Power Dissipation (Max): 3.3W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 3V @ 270µA Supplier Device Package: 8-WDFNW (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 4500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFWS007N08HLTAG | onsemi |
Description: 80V T8 IN U8FL HEFET PACKPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V Power Dissipation (Max): 3.3W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 3V @ 270µA Supplier Device Package: 8-WDFNW (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 5786 Stücke: Lieferzeit 10-14 Tag (e) |
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TL064CN | onsemi |
Description: IC OPAMP JFET 4 CIRCUIT 14DIPPackaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Amplifier Type: J-FET Operating Temperature: 0°C ~ 70°C Current - Supply: 200µA (x4 Channels) Slew Rate: 3.5V/µs Gain Bandwidth Product: 1 MHz Current - Input Bias: 30 pA Voltage - Input Offset: 3 mV Supplier Device Package: 14-PDIP Number of Circuits: 4 Current - Output / Channel: 20 mA Voltage - Supply Span (Min): 10 V Voltage - Supply Span (Max): 30 V |
auf Bestellung 142284 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB039N06 | onsemi |
Description: MOSFET N-CH 60V 120A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 75A, 10V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 25 V |
Produkt ist nicht verfügbar |
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FDB039N06 | onsemi |
Description: MOSFET N-CH 60V 120A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 75A, 10V Power Dissipation (Max): 231W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 25 V |
Produkt ist nicht verfügbar |
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NSQA12VAW5T2G | onsemi |
Description: TVS DIODE 9VWM 23VC SC88APackaging: Bulk Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 15pF @ 1MHz Current - Peak Pulse (10/1000µs): 900mA (8/20µs) Voltage - Reverse Standoff (Typ): 9V Supplier Device Package: SC-88A (SC-70-5/SOT-353) Unidirectional Channels: 4 Voltage - Breakdown (Min): 11.4V Voltage - Clamping (Max) @ Ipp: 23V Power - Peak Pulse: 20W Power Line Protection: No |
auf Bestellung 108269 Stücke: Lieferzeit 10-14 Tag (e) |
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NSQA12VAW5T2 | onsemi |
Description: TVS DIODE 9VWM 23VC SC88APackaging: Bulk Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Type: Zener Operating Temperature: -40°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 15pF @ 1MHz Current - Peak Pulse (10/1000µs): 900mA (8/20µs) Voltage - Reverse Standoff (Typ): 9V Supplier Device Package: SC-88A (SC-70-5/SOT-353) Unidirectional Channels: 4 Voltage - Breakdown (Min): 11.4V Voltage - Clamping (Max) @ Ipp: 23V Power - Peak Pulse: 20W Power Line Protection: No |
auf Bestellung 99000 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC4634LS | onsemi |
Description: TRANS NPN 1500V 0.01A TO220FIPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 5V @ 100µA, 500µA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200µA, 5V Frequency - Transition: 6MHz Supplier Device Package: TO-220FI(LS) Current - Collector (Ic) (Max): 10 mA Voltage - Collector Emitter Breakdown (Max): 1500 V Power - Max: 2 W |
auf Bestellung 945 Stücke: Lieferzeit 10-14 Tag (e) |
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2SC4636LS | onsemi |
Description: TRANS NPN 1800V 0.01A TO220FIPackaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 5V @ 40µA, 200µA Current - Collector Cutoff (Max): 1µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100µA, 5V Frequency - Transition: 6MHz Supplier Device Package: TO-220FI(LS) Current - Collector (Ic) (Max): 10 mA Voltage - Collector Emitter Breakdown (Max): 1800 V Power - Max: 2 W |
auf Bestellung 75 Stücke: Lieferzeit 10-14 Tag (e) |
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74VCX16245MTD | onsemi |
Description: IC TXRX NON-INVERT 3.6V 48TSSOP Packaging: Tube Package / Case: 48-TFSOP (0.240", 6.10mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.2V ~ 3.6V Number of Bits per Element: 8 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 48-TSSOP |
auf Bestellung 143 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5227B | onsemi |
Description: DIODE ZENER 3.6V 500MW DO35Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 3.6 V Impedance (Max) (Zzt): 24 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 15 µA @ 1 V |
auf Bestellung 1316 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF4N90 | onsemi |
Description: MOSFET N-CH 900V 2.5A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc) Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.25A, 10V Power Dissipation (Max): 47W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 900 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
Produkt ist nicht verfügbar |
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| TIP146G | onsemi |
Description: TRANS PNP DARL 80V 10A SOT-93Packaging: Bulk Package / Case: TO-218-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Supplier Device Package: SOT-93 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 80 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| TIP146 | onsemi |
Description: TRANS PNP DARL 80V 10A SOT-93Packaging: Bulk Package / Case: TO-218-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Supplier Device Package: SOT-93 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 80 W |
Produkt ist nicht verfügbar |
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| SC78117P1 | onsemi |
Description: ANA OP AMP LO POWER Packaging: Bulk |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF17P06 | onsemi |
Description: MOSFET P-CH 60V 12A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 6A, 10V Power Dissipation (Max): 39W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V |
Produkt ist nicht verfügbar |
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ADP3293JCPZ-RL | onsemi |
Description: IC REG CTRLR INTEL 3OUT 40LFCSPPackaging: Bulk Package / Case: 40-VFQFN Exposed Pad, CSP Voltage - Output: 0.5V ~ 1.6V Mounting Type: Surface Mount Number of Outputs: 3 Voltage - Input: 6V ~ 14.5V Operating Temperature: 0°C ~ 85°C Applications: Controller, Intel Processor Supplier Device Package: 40-LFCSP (6x6) |
auf Bestellung 78814 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5361B | onsemi |
Description: DIODE ZENER 27V 5W AXIALTolerance: ±5% Packaging: Bulk Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: Axial Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 20.6 V |
Produkt ist nicht verfügbar |
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1N756A | onsemi |
Description: DIODE ZENER 8.2V 500MW DO35Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 1 V |
Produkt ist nicht verfügbar |
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1N756ATR | onsemi |
Description: DIODE ZENER 8.2V 500MW DO35Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 1 V |
Produkt ist nicht verfügbar |
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MC74LCX244DT | onsemi |
Description: IC BUFF NON-INVERT 5.5V 20-TSSOPPackaging: Tube Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 20-TSSOP |
auf Bestellung 15930 Stücke: Lieferzeit 10-14 Tag (e) |
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1N6373RL4 | onsemi |
Description: TVS DIODE 5VWM 9.4V AXIALPackaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 160A Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: Axial Unidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 9.4V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTMFD001N03P9 |
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Hersteller: onsemi
Description: MOSFET 2N-CH 30V 11A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW (Ta), 25W (Tc), 1.04W (Ta), 41W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 57A (Tc), 25A (Ta), 165A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1224pF @ 15V, 6575pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V, 1mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, 43nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Description: MOSFET 2N-CH 30V 11A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW (Ta), 25W (Tc), 1.04W (Ta), 41W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 57A (Tc), 25A (Ta), 165A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1224pF @ 15V, 6575pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V, 1mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, 43nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 1.37 EUR |
| NTMFD001N03P9 |
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Hersteller: onsemi
Description: MOSFET 2N-CH 30V 11A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW (Ta), 25W (Tc), 1.04W (Ta), 41W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 57A (Tc), 25A (Ta), 165A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1224pF @ 15V, 6575pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V, 1mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, 43nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Description: MOSFET 2N-CH 30V 11A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 960mW (Ta), 25W (Tc), 1.04W (Ta), 41W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 57A (Tc), 25A (Ta), 165A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1224pF @ 15V, 6575pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V, 1mOhm @ 40A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 4.5V, 43nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 4.35 EUR |
| 10+ | 2.81 EUR |
| 100+ | 1.94 EUR |
| 500+ | 1.63 EUR |
| 1000+ | 1.61 EUR |
| ECH8320-TL-H |
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Hersteller: onsemi
Description: MOSFET P-CH 20V 9.5A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 8-ECH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V
Description: MOSFET P-CH 20V 9.5A 8ECH
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 8-ECH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ECH8320-TL-H |
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Hersteller: onsemi
Description: MOSFET P-CH 20V 9.5A 8ECH
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 8-ECH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V
Description: MOSFET P-CH 20V 9.5A 8ECH
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 8-ECH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 10 V
auf Bestellung 122629 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 624+ | 0.74 EUR |
| ECH8306-TL-E |
Hersteller: onsemi
Description: MOSFET P-CH 100V 2A 8ECH
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 225mOhm @ 1A, 10V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 8-ECH
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 20 V
Description: MOSFET P-CH 100V 2A 8ECH
Packaging: Bulk
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 225mOhm @ 1A, 10V
Power Dissipation (Max): 1.6W (Ta)
Supplier Device Package: 8-ECH
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 20 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1150+ | 0.4 EUR |
| ECH8309-TL-H |
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Hersteller: onsemi
Description: P-CHANNEL POWER MOSFET -12V, -9.
Packaging: Bulk
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-ECH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 6 V
Description: P-CHANNEL POWER MOSFET -12V, -9.
Packaging: Bulk
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.5W (Ta)
Supplier Device Package: 8-ECH
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 6 V
auf Bestellung 142845 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 754+ | 0.62 EUR |
| MMDL770T1 |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 70V SOD323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 0.5pF @ 20V, 1MHz
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 35 V
Description: DIODE SCHOTTKY 70V SOD323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 0.5pF @ 20V, 1MHz
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 35 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC03ANG |
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Hersteller: onsemi
Description: IC GATE NAND 4CH 2-INP 14DIP
Packaging: Tube
Features: Open Drain
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: -, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-PDIP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Description: IC GATE NAND 4CH 2-INP 14DIP
Packaging: Tube
Features: Open Drain
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: -, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-PDIP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 20ns @ 6V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
auf Bestellung 27731 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 910+ | 0.51 EUR |
| SVC203SPA |
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Hersteller: onsemi
Description: DIODE VARACTOR 16V DUAL 3-SPA
Packaging: Bulk
Package / Case: 3-SSIP
Mounting Type: Through Hole
Diode Type: 1 Pair Common Cathode
Operating Temperature: 125°C (TJ)
Q @ Vr, F: 60 @ 3V, 100MHz
Capacitance Ratio Condition: C3/C8
Supplier Device Package: 3-SPA
Voltage - Peak Reverse (Max): 16 V
Capacitance Ratio: 3.0
Description: DIODE VARACTOR 16V DUAL 3-SPA
Packaging: Bulk
Package / Case: 3-SSIP
Mounting Type: Through Hole
Diode Type: 1 Pair Common Cathode
Operating Temperature: 125°C (TJ)
Q @ Vr, F: 60 @ 3V, 100MHz
Capacitance Ratio Condition: C3/C8
Supplier Device Package: 3-SPA
Voltage - Peak Reverse (Max): 16 V
Capacitance Ratio: 3.0
auf Bestellung 180999 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3620+ | 0.12 EUR |
| NUF3101FCT1G |
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Hersteller: onsemi
Description: FILTER RC(PI) 300MHZ ESD SMD
Packaging: Bulk
Package / Case: 8-WFBGA, FCBGA
Size / Dimension: 0.061" L x 0.061" W (1.55mm x 1.55mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 47Ohms, 100Ohms, C = 40pF (Total)
Height: 0.028" (0.70mm)
Attenuation Value: -25dB @ 800MHz ~ 2.2GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 300MHz (Cutoff)
Resistance - Channel (Ohms): 47, 100
ESD Protection: Yes
Number of Channels: 3
Description: FILTER RC(PI) 300MHZ ESD SMD
Packaging: Bulk
Package / Case: 8-WFBGA, FCBGA
Size / Dimension: 0.061" L x 0.061" W (1.55mm x 1.55mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 47Ohms, 100Ohms, C = 40pF (Total)
Height: 0.028" (0.70mm)
Attenuation Value: -25dB @ 800MHz ~ 2.2GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 300MHz (Cutoff)
Resistance - Channel (Ohms): 47, 100
ESD Protection: Yes
Number of Channels: 3
auf Bestellung 361043 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 728+ | 0.63 EUR |
| BC237A |
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Hersteller: onsemi
Description: TRANS NPN 45V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
Description: TRANS NPN 45V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 500 mW
auf Bestellung 3692 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3692+ | 0.046 EUR |
| NCP140AMXD330TCG |
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Hersteller: onsemi
Description: IC REG LINEAR 3.3V 150MA 4-XDFN
Packaging: Bulk
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 62dB ~ 55dB (100Hz ~ 1kHz)
Voltage Dropout (Max): 0.22V @ 150mA
Protection Features: Over Temperature
Description: IC REG LINEAR 3.3V 150MA 4-XDFN
Packaging: Bulk
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
PSRR: 62dB ~ 55dB (100Hz ~ 1kHz)
Voltage Dropout (Max): 0.22V @ 150mA
Protection Features: Over Temperature
auf Bestellung 114000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1244+ | 0.36 EUR |
| NCP140AMXD180TCG |
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Hersteller: onsemi
Description: IC REG LINEAR 1.8V 150MA 4-XDFN
Packaging: Bulk
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 62dB ~ 55dB (100Hz ~ 1kHz)
Voltage Dropout (Max): 0.39V @ 150mA
Protection Features: Over Temperature
Description: IC REG LINEAR 1.8V 150MA 4-XDFN
Packaging: Bulk
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 75 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
PSRR: 62dB ~ 55dB (100Hz ~ 1kHz)
Voltage Dropout (Max): 0.39V @ 150mA
Protection Features: Over Temperature
auf Bestellung 129000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1244+ | 0.36 EUR |
| 1N757ATR |
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Hersteller: onsemi
Description: DIODE ZENER 9.1V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Description: DIODE ZENER 9.1V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV7041DM3G100R2G |
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Hersteller: onsemi
Description: CURRENT SENSE AMPLIFIER, 80V COM
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 150°C (TA)
Current - Supply: 1.5mA
Slew Rate: 1V/µs
Gain Bandwidth Product: 100 kHz
Current - Input Bias: 200 µA
Voltage - Input Offset: 100 µV
Supplier Device Package: 8-MSOP
Number of Circuits: 1
-3db Bandwidth: 80 kHz
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 5.5 V
Description: CURRENT SENSE AMPLIFIER, 80V COM
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 150°C (TA)
Current - Supply: 1.5mA
Slew Rate: 1V/µs
Gain Bandwidth Product: 100 kHz
Current - Input Bias: 200 µA
Voltage - Input Offset: 100 µV
Supplier Device Package: 8-MSOP
Number of Circuits: 1
-3db Bandwidth: 80 kHz
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4000+ | 1.04 EUR |
| NCV7041DM3G100R2G |
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Hersteller: onsemi
Description: CURRENT SENSE AMPLIFIER, 80V COM
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 150°C (TA)
Current - Supply: 1.5mA
Slew Rate: 1V/µs
Gain Bandwidth Product: 100 kHz
Current - Input Bias: 200 µA
Voltage - Input Offset: 100 µV
Supplier Device Package: 8-MSOP
Number of Circuits: 1
-3db Bandwidth: 80 kHz
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 5.5 V
Description: CURRENT SENSE AMPLIFIER, 80V COM
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 150°C (TA)
Current - Supply: 1.5mA
Slew Rate: 1V/µs
Gain Bandwidth Product: 100 kHz
Current - Input Bias: 200 µA
Voltage - Input Offset: 100 µV
Supplier Device Package: 8-MSOP
Number of Circuits: 1
-3db Bandwidth: 80 kHz
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.89 EUR |
| 10+ | 2.44 EUR |
| 25+ | 2.06 EUR |
| 100+ | 1.63 EUR |
| 250+ | 1.43 EUR |
| 500+ | 1.3 EUR |
| 1000+ | 1.19 EUR |
| NCV7041DM3G050R2G |
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Hersteller: onsemi
Description: CURRENT SENSE AMPLIFIER, 80V COM
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 150°C (TA)
Current - Supply: 1.5mA
Slew Rate: 1V/µs
Gain Bandwidth Product: 100 kHz
Current - Input Bias: 200 µA
Voltage - Input Offset: 100 µV
Supplier Device Package: 8-MSOP
Number of Circuits: 1
-3db Bandwidth: 80 kHz
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 5.5 V
Description: CURRENT SENSE AMPLIFIER, 80V COM
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 150°C (TA)
Current - Supply: 1.5mA
Slew Rate: 1V/µs
Gain Bandwidth Product: 100 kHz
Current - Input Bias: 200 µA
Voltage - Input Offset: 100 µV
Supplier Device Package: 8-MSOP
Number of Circuits: 1
-3db Bandwidth: 80 kHz
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4000+ | 1.04 EUR |
| NCV7041DM3G050R2G |
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Hersteller: onsemi
Description: CURRENT SENSE AMPLIFIER, 80V COM
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 150°C (TA)
Current - Supply: 1.5mA
Slew Rate: 1V/µs
Gain Bandwidth Product: 100 kHz
Current - Input Bias: 200 µA
Voltage - Input Offset: 100 µV
Supplier Device Package: 8-MSOP
Number of Circuits: 1
-3db Bandwidth: 80 kHz
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 5.5 V
Description: CURRENT SENSE AMPLIFIER, 80V COM
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 150°C (TA)
Current - Supply: 1.5mA
Slew Rate: 1V/µs
Gain Bandwidth Product: 100 kHz
Current - Input Bias: 200 µA
Voltage - Input Offset: 100 µV
Supplier Device Package: 8-MSOP
Number of Circuits: 1
-3db Bandwidth: 80 kHz
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 5413 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.89 EUR |
| 10+ | 2.44 EUR |
| 25+ | 2.06 EUR |
| 100+ | 1.63 EUR |
| 250+ | 1.43 EUR |
| 500+ | 1.3 EUR |
| 1000+ | 1.19 EUR |
| NCV7041DM3G014R2G |
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Hersteller: onsemi
Description: CURRENT SENSE AMPLIFIER, 80V COM
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 150°C (TA)
Current - Supply: 1.5mA
Slew Rate: 1V/µs
Gain Bandwidth Product: 100 kHz
Current - Input Bias: 200 µA
Voltage - Input Offset: 100 µV
Supplier Device Package: 8-MSOP
Number of Circuits: 1
-3db Bandwidth: 80 kHz
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 5.5 V
Description: CURRENT SENSE AMPLIFIER, 80V COM
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 150°C (TA)
Current - Supply: 1.5mA
Slew Rate: 1V/µs
Gain Bandwidth Product: 100 kHz
Current - Input Bias: 200 µA
Voltage - Input Offset: 100 µV
Supplier Device Package: 8-MSOP
Number of Circuits: 1
-3db Bandwidth: 80 kHz
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 5.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV7041DM3G014R2G |
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Hersteller: onsemi
Description: CURRENT SENSE AMPLIFIER, 80V COM
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 150°C (TA)
Current - Supply: 1.5mA
Slew Rate: 1V/µs
Gain Bandwidth Product: 100 kHz
Current - Input Bias: 200 µA
Voltage - Input Offset: 100 µV
Supplier Device Package: 8-MSOP
Number of Circuits: 1
-3db Bandwidth: 80 kHz
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 5.5 V
Description: CURRENT SENSE AMPLIFIER, 80V COM
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 150°C (TA)
Current - Supply: 1.5mA
Slew Rate: 1V/µs
Gain Bandwidth Product: 100 kHz
Current - Input Bias: 200 µA
Voltage - Input Offset: 100 µV
Supplier Device Package: 8-MSOP
Number of Circuits: 1
-3db Bandwidth: 80 kHz
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 5.5 V
Produkt ist nicht verfügbar
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| NCV7041DM3G020R2G |
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Hersteller: onsemi
Description: CURRENT SENSE AMPLIFIER, 80V COM
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 150°C (TA)
Current - Supply: 1.5mA
Slew Rate: 1V/µs
Gain Bandwidth Product: 100 kHz
Current - Input Bias: 200 µA
Voltage - Input Offset: 100 µV
Supplier Device Package: 8-MSOP
Number of Circuits: 1
-3db Bandwidth: 80 kHz
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 5.5 V
Description: CURRENT SENSE AMPLIFIER, 80V COM
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 150°C (TA)
Current - Supply: 1.5mA
Slew Rate: 1V/µs
Gain Bandwidth Product: 100 kHz
Current - Input Bias: 200 µA
Voltage - Input Offset: 100 µV
Supplier Device Package: 8-MSOP
Number of Circuits: 1
-3db Bandwidth: 80 kHz
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 5.5 V
Produkt ist nicht verfügbar
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| NCV7041DM3G020R2G |
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Hersteller: onsemi
Description: CURRENT SENSE AMPLIFIER, 80V COM
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 150°C (TA)
Current - Supply: 1.5mA
Slew Rate: 1V/µs
Gain Bandwidth Product: 100 kHz
Current - Input Bias: 200 µA
Voltage - Input Offset: 100 µV
Supplier Device Package: 8-MSOP
Number of Circuits: 1
-3db Bandwidth: 80 kHz
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 5.5 V
Description: CURRENT SENSE AMPLIFIER, 80V COM
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Amplifier Type: Current Sense
Operating Temperature: -40°C ~ 150°C (TA)
Current - Supply: 1.5mA
Slew Rate: 1V/µs
Gain Bandwidth Product: 100 kHz
Current - Input Bias: 200 µA
Voltage - Input Offset: 100 µV
Supplier Device Package: 8-MSOP
Number of Circuits: 1
-3db Bandwidth: 80 kHz
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 5.5 V
Produkt ist nicht verfügbar
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| TS393DR2G |
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Hersteller: onsemi
Description: IC COMPARATOR 2 GEN PUR 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2.7V ~ 16V
Supplier Device Package: 8-SOIC
Propagation Delay (Max): 2.1µs
Current - Quiescent (Max): 15µA
Voltage - Input Offset (Max): 1.4mV (Typ)
Current - Input Bias (Max): 600pA
Current - Output (Typ): 1mA
CMRR, PSRR (Typ): 71dB CMRR, 80dB PSRR
Description: IC COMPARATOR 2 GEN PUR 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2.7V ~ 16V
Supplier Device Package: 8-SOIC
Propagation Delay (Max): 2.1µs
Current - Quiescent (Max): 15µA
Voltage - Input Offset (Max): 1.4mV (Typ)
Current - Input Bias (Max): 600pA
Current - Output (Typ): 1mA
CMRR, PSRR (Typ): 71dB CMRR, 80dB PSRR
auf Bestellung 405715 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 904+ | 0.51 EUR |
| FODM217CR4V |
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Hersteller: onsemi
Description: OPTOISO 3.75KV 1CH TRANS 4-MFP
Packaging: Bulk
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-MFP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 3µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 1CH TRANS 4-MFP
Packaging: Bulk
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 5mA
Supplier Device Package: 4-MFP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 3µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Produkt ist nicht verfügbar
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| NUF4010MUT2G |
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Hersteller: onsemi
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Size / Dimension: 0.071" L x 0.047" W (1.80mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 7pF
Height: 0.022" (0.55mm)
Attenuation Value: -20dB @ 800MHz ~ 5GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 250MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 4
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Size / Dimension: 0.071" L x 0.047" W (1.80mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 7pF
Height: 0.022" (0.55mm)
Attenuation Value: -20dB @ 800MHz ~ 5GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 250MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 4
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| DM74153N |
![]() |
Hersteller: onsemi
Description: IC MULTIPLEXER 2 X 4:1 16-PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 2 x 4:1
Type: Multiplexer
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-PDIP
Description: IC MULTIPLEXER 2 X 4:1 16-PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 2 x 4:1
Type: Multiplexer
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-PDIP
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| FQAF15N70 |
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Hersteller: onsemi
Description: MOSFET N-CH 700V 9.5A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 4.8A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Description: MOSFET N-CH 700V 9.5A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 4.8A, 10V
Power Dissipation (Max): 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
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| NSR20206NXT5G |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 20V 2A 2DSN
Packaging: Bulk
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: 2-DSN (1.6x0.8)
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 20 V
Description: DIODE SCHOTTKY 20V 2A 2DSN
Packaging: Bulk
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Schottky
Capacitance @ Vr, F: 140pF @ 0V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: 2-DSN (1.6x0.8)
Operating Temperature - Junction: 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 20 V
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| MMBTA56 |
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Hersteller: onsemi
Description: TRANS PNP 80V 0.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 350 mW
Description: TRANS PNP 80V 0.5A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 350 mW
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| MJD340T4 |
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Hersteller: onsemi
Description: TRANS NPN 300V 0.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
Description: TRANS NPN 300V 0.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: DPAK
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
Produkt ist nicht verfügbar
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| DM74ALS163BN |
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Hersteller: onsemi
Description: IC BINARY COUNTER 4-BIT 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Binary Counter
Reset: Synchronous
Operating Temperature: 0°C ~ 70°C
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-PDIP
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 40 MHz
Number of Bits per Element: 4
Description: IC BINARY COUNTER 4-BIT 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Binary Counter
Reset: Synchronous
Operating Temperature: 0°C ~ 70°C
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-PDIP
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 40 MHz
Number of Bits per Element: 4
Produkt ist nicht verfügbar
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| DM74ALS163BMX |
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Hersteller: onsemi
Description: IC BINARY COUNTER 4-BIT 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Synchronous
Operating Temperature: 0°C ~ 70°C
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-SOIC
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 40 MHz
Number of Bits per Element: 4
Description: IC BINARY COUNTER 4-BIT 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Synchronous
Operating Temperature: 0°C ~ 70°C
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-SOIC
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 40 MHz
Number of Bits per Element: 4
Produkt ist nicht verfügbar
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| DM74ALS163BM |
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Hersteller: onsemi
Description: IC BINARY COUNTER 4-BIT 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Synchronous
Operating Temperature: 0°C ~ 70°C
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-SOIC
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 40 MHz
Number of Bits per Element: 4
Description: IC BINARY COUNTER 4-BIT 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Synchronous
Operating Temperature: 0°C ~ 70°C
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-SOIC
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 40 MHz
Number of Bits per Element: 4
Produkt ist nicht verfügbar
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| SN74LS298N |
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Hersteller: onsemi
Description: IC MULTIPLEXER 4 X 2:1 16-PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Independent Circuits: 1
Current - Output High, Low: 400µA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-PDIP
Description: IC MULTIPLEXER 4 X 2:1 16-PDIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Circuit: 4 x 2:1
Type: Multiplexer
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Independent Circuits: 1
Current - Output High, Low: 400µA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-PDIP
auf Bestellung 4439 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 193+ | 2.41 EUR |
| HUFA75344P3 |
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Hersteller: onsemi
Description: MOSFET N-CH 55V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 285W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Description: MOSFET N-CH 55V 75A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 75A, 10V
Power Dissipation (Max): 285W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
Produkt ist nicht verfügbar
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| NVLJWS022N06CLTAG |
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Hersteller: onsemi
Description: T6 60V LL 2X2 WDFNW6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 77µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Qualification: AEC-Q101
Description: T6 60V LL 2X2 WDFNW6
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Power Dissipation (Max): 2.4W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2V @ 77µA
Supplier Device Package: 6-WDFNW (2.05x2.05)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 11402 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 19+ | 0.93 EUR |
| 27+ | 0.67 EUR |
| 30+ | 0.6 EUR |
| 100+ | 0.52 EUR |
| 250+ | 0.49 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.45 EUR |
| NVTFS007N08HLTAG |
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Hersteller: onsemi
Description: MOSFET N-CHANNEL 80V 71A
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 3V @ 270µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CHANNEL 80V 71A
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 3V @ 270µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVTFS007N08HLTAG |
![]() |
Hersteller: onsemi
Description: MOSFET N-CHANNEL 80V 71A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 3V @ 270µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CHANNEL 80V 71A
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 3V @ 270µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 1346 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.73 EUR |
| 11+ | 1.74 EUR |
| 100+ | 1.17 EUR |
| 500+ | 0.93 EUR |
| NVTFWS007N08HLTAG |
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Hersteller: onsemi
Description: 80V T8 IN U8FL HEFET PACK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 3V @ 270µA
Supplier Device Package: 8-WDFNW (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V
Qualification: AEC-Q101
Description: 80V T8 IN U8FL HEFET PACK
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 3V @ 270µA
Supplier Device Package: 8-WDFNW (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1500+ | 0.77 EUR |
| 3000+ | 0.75 EUR |
| 4500+ | 0.74 EUR |
| NVTFWS007N08HLTAG |
![]() |
Hersteller: onsemi
Description: 80V T8 IN U8FL HEFET PACK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 3V @ 270µA
Supplier Device Package: 8-WDFNW (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V
Qualification: AEC-Q101
Description: 80V T8 IN U8FL HEFET PACK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.4A (Ta), 71A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 3V @ 270µA
Supplier Device Package: 8-WDFNW (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 32.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 5786 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 1.57 EUR |
| 16+ | 1.13 EUR |
| 25+ | 1.02 EUR |
| 100+ | 0.9 EUR |
| 250+ | 0.84 EUR |
| 500+ | 0.81 EUR |
| TL064CN |
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Hersteller: onsemi
Description: IC OPAMP JFET 4 CIRCUIT 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: J-FET
Operating Temperature: 0°C ~ 70°C
Current - Supply: 200µA (x4 Channels)
Slew Rate: 3.5V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 30 pA
Voltage - Input Offset: 3 mV
Supplier Device Package: 14-PDIP
Number of Circuits: 4
Current - Output / Channel: 20 mA
Voltage - Supply Span (Min): 10 V
Voltage - Supply Span (Max): 30 V
Description: IC OPAMP JFET 4 CIRCUIT 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: J-FET
Operating Temperature: 0°C ~ 70°C
Current - Supply: 200µA (x4 Channels)
Slew Rate: 3.5V/µs
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 30 pA
Voltage - Input Offset: 3 mV
Supplier Device Package: 14-PDIP
Number of Circuits: 4
Current - Output / Channel: 20 mA
Voltage - Supply Span (Min): 10 V
Voltage - Supply Span (Max): 30 V
auf Bestellung 142284 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 559+ | 0.82 EUR |
| FDB039N06 |
Hersteller: onsemi
Description: MOSFET N-CH 60V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 75A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 25 V
Description: MOSFET N-CH 60V 120A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 75A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDB039N06 |
Hersteller: onsemi
Description: MOSFET N-CH 60V 120A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 75A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 25 V
Description: MOSFET N-CH 60V 120A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 75A, 10V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSQA12VAW5T2G |
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Hersteller: onsemi
Description: TVS DIODE 9VWM 23VC SC88A
Packaging: Bulk
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 900mA (8/20µs)
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 20W
Power Line Protection: No
Description: TVS DIODE 9VWM 23VC SC88A
Packaging: Bulk
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 900mA (8/20µs)
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 20W
Power Line Protection: No
auf Bestellung 108269 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2273+ | 0.2 EUR |
| NSQA12VAW5T2 |
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Hersteller: onsemi
Description: TVS DIODE 9VWM 23VC SC88A
Packaging: Bulk
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 900mA (8/20µs)
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 20W
Power Line Protection: No
Description: TVS DIODE 9VWM 23VC SC88A
Packaging: Bulk
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Current - Peak Pulse (10/1000µs): 900mA (8/20µs)
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 23V
Power - Peak Pulse: 20W
Power Line Protection: No
auf Bestellung 99000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2597+ | 0.18 EUR |
| 2SC4634LS |
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Hersteller: onsemi
Description: TRANS NPN 1500V 0.01A TO220FI
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 100µA, 500µA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200µA, 5V
Frequency - Transition: 6MHz
Supplier Device Package: TO-220FI(LS)
Current - Collector (Ic) (Max): 10 mA
Voltage - Collector Emitter Breakdown (Max): 1500 V
Power - Max: 2 W
Description: TRANS NPN 1500V 0.01A TO220FI
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 100µA, 500µA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200µA, 5V
Frequency - Transition: 6MHz
Supplier Device Package: TO-220FI(LS)
Current - Collector (Ic) (Max): 10 mA
Voltage - Collector Emitter Breakdown (Max): 1500 V
Power - Max: 2 W
auf Bestellung 945 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 157+ | 2.84 EUR |
| 2SC4636LS |
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Hersteller: onsemi
Description: TRANS NPN 1800V 0.01A TO220FI
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 40µA, 200µA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100µA, 5V
Frequency - Transition: 6MHz
Supplier Device Package: TO-220FI(LS)
Current - Collector (Ic) (Max): 10 mA
Voltage - Collector Emitter Breakdown (Max): 1800 V
Power - Max: 2 W
Description: TRANS NPN 1800V 0.01A TO220FI
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 40µA, 200µA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100µA, 5V
Frequency - Transition: 6MHz
Supplier Device Package: TO-220FI(LS)
Current - Collector (Ic) (Max): 10 mA
Voltage - Collector Emitter Breakdown (Max): 1800 V
Power - Max: 2 W
auf Bestellung 75 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 75+ | 5.94 EUR |
| 74VCX16245MTD |
Hersteller: onsemi
Description: IC TXRX NON-INVERT 3.6V 48TSSOP
Packaging: Tube
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 48-TSSOP
Description: IC TXRX NON-INVERT 3.6V 48TSSOP
Packaging: Tube
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 48-TSSOP
auf Bestellung 143 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 3.94 EUR |
| 10+ | 3.54 EUR |
| 25+ | 3.34 EUR |
| 100+ | 2.85 EUR |
| 1N5227B |
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Hersteller: onsemi
Description: DIODE ZENER 3.6V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
Description: DIODE ZENER 3.6V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
auf Bestellung 1316 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 112+ | 0.16 EUR |
| 244+ | 0.072 EUR |
| 527+ | 0.033 EUR |
| 579+ | 0.03 EUR |
| 1000+ | 0.026 EUR |
| FQPF4N90 |
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Hersteller: onsemi
Description: MOSFET N-CH 900V 2.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.25A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Description: MOSFET N-CH 900V 2.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 1.25A, 10V
Power Dissipation (Max): 47W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TIP146G |
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Hersteller: onsemi
Description: TRANS PNP DARL 80V 10A SOT-93
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: SOT-93
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 80 W
Description: TRANS PNP DARL 80V 10A SOT-93
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: SOT-93
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 80 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TIP146 |
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Hersteller: onsemi
Description: TRANS PNP DARL 80V 10A SOT-93
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: SOT-93
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 80 W
Description: TRANS PNP DARL 80V 10A SOT-93
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: SOT-93
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 80 W
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| SC78117P1 |
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 1.3 EUR |
| FQPF17P06 |
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Hersteller: onsemi
Description: MOSFET P-CH 60V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 6A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Description: MOSFET P-CH 60V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 6A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
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| ADP3293JCPZ-RL |
![]() |
Hersteller: onsemi
Description: IC REG CTRLR INTEL 3OUT 40LFCSP
Packaging: Bulk
Package / Case: 40-VFQFN Exposed Pad, CSP
Voltage - Output: 0.5V ~ 1.6V
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 6V ~ 14.5V
Operating Temperature: 0°C ~ 85°C
Applications: Controller, Intel Processor
Supplier Device Package: 40-LFCSP (6x6)
Description: IC REG CTRLR INTEL 3OUT 40LFCSP
Packaging: Bulk
Package / Case: 40-VFQFN Exposed Pad, CSP
Voltage - Output: 0.5V ~ 1.6V
Mounting Type: Surface Mount
Number of Outputs: 3
Voltage - Input: 6V ~ 14.5V
Operating Temperature: 0°C ~ 85°C
Applications: Controller, Intel Processor
Supplier Device Package: 40-LFCSP (6x6)
auf Bestellung 78814 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 268+ | 1.73 EUR |
| 1N5361B | ![]() |
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Hersteller: onsemi
Description: DIODE ZENER 27V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 20.6 V
Description: DIODE ZENER 27V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 20.6 V
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| 1N756A |
![]() |
Hersteller: onsemi
Description: DIODE ZENER 8.2V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Description: DIODE ZENER 8.2V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
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| 1N756ATR |
![]() |
Hersteller: onsemi
Description: DIODE ZENER 8.2V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Description: DIODE ZENER 8.2V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
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| MC74LCX244DT |
![]() |
Hersteller: onsemi
Description: IC BUFF NON-INVERT 5.5V 20-TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
Description: IC BUFF NON-INVERT 5.5V 20-TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
auf Bestellung 15930 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1397+ | 0.32 EUR |
| 1N6373RL4 |
![]() |
Hersteller: onsemi
Description: TVS DIODE 5VWM 9.4V AXIAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 160A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Description: TVS DIODE 5VWM 9.4V AXIAL
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 160A
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 9.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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