| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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NZ8F9V1MX2WT5G | onsemi |
 Description: DIODE ZENER 9.1V 250MW 2-X2DFNWPackage / Case: 2-XDFN Tolerance: ±5% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 500 nA @ 6 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 250 mW Supplier Device Package: 2-X2DFNW (1x0.6) Impedance (Max) (Zzt): 30 Ohms Voltage - Zener (Nom) (Vz): 9.1 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank |
auf Bestellung 4565 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBASH21MX2WT5G | onsemi |
Description: DIODE STANDARD 250V 0.2A X2DFNW2 Capacitance @ Vr, F: 3pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-XDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 nA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 250 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: 2-X2DFNW (1x0.6) Current - Average Rectified (Io): 200mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NSVBASH21MX2WT5G | onsemi |
Description: DIODE STANDARD 250V 0.2A X2DFNW2 Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 nA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 250 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: 2-X2DFNW (1x0.6) Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 3pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-XDFN Packaging: Cut Tape (CT) |
auf Bestellung 6460 Stücke: Lieferzeit 10-14 Tag (e) |
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SZNZ8F9V1MX2WT5G | onsemi |
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 500 nA @ 6 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 250 mW Grade: Automotive Supplier Device Package: 2-X2DFNW (1x0.6) Impedance (Max) (Zzt): 30 Ohms Voltage - Zener (Nom) (Vz): 9.1 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-XDFN Tolerance: ±5% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SZNZ8F9V1MX2WT5G | onsemi |
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW Package / Case: 2-XDFN Tolerance: ±5% Packaging: Cut Tape (CT) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 500 nA @ 6 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 250 mW Grade: Automotive Supplier Device Package: 2-X2DFNW (1x0.6) Impedance (Max) (Zzt): 30 Ohms Voltage - Zener (Nom) (Vz): 9.1 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SZNZ8F5V1MX2WT5G | onsemi |
Description: DIODE ZENER 5.1V 250MW 2-X2DFNW Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-XDFN Tolerance: ±5% Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 250 mW Grade: Automotive Supplier Device Package: 2-X2DFNW (1x0.6) Impedance (Max) (Zzt): 80 Ohms Voltage - Zener (Nom) (Vz): 5.1 V |
auf Bestellung 136000 Stücke: Lieferzeit 10-14 Tag (e) |
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SZNZ8F5V1MX2WT5G | onsemi |
Description: DIODE ZENER 5.1V 250MW 2-X2DFNW Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 250 mW Grade: Automotive Supplier Device Package: 2-X2DFNW (1x0.6) Impedance (Max) (Zzt): 80 Ohms Voltage - Zener (Nom) (Vz): 5.1 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-XDFN Tolerance: ±5% Packaging: Cut Tape (CT) |
auf Bestellung 136000 Stücke: Lieferzeit 10-14 Tag (e) |
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AR0145CS1C00SMKA0-CP-E | onsemi |
Description: 1MP, 1/4.3, GLOBAL SHUTTER IMAGE Voltage - Supply: 1.2V ~ 2.8V Operating Temperature: -30°C ~ 85°C Type: CMOS Package / Case: 47-VFBGA, CSPBGA Packaging: Tray Frames per Second: 120.0 Supplier Device Package: 47-ODCSP (5.74x4.42) Active Pixel Array: 1280H x 800V Pixel Size: 2.8µm x 2.8µm |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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AR0145CS1C28SMKA0-CP-E | onsemi |
Description: 1MP, 1/4.3, GLOBAL SHUTTER IMAGE Frames per Second: 120.0 Supplier Device Package: 47-ODCSP (5.74x4.42) Active Pixel Array: 1280H x 800V Pixel Size: 2.8µm x 2.8µm Voltage - Supply: 1.2V ~ 2.8V Operating Temperature: -30°C ~ 85°C Type: CMOS Package / Case: 47-VFBGA, CSPBGA Packaging: Tray |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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FOD3120TS | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8SMD Packaging: Tube Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.5V Current - Peak Output: 3A Technology: Optical Coupling Current - Output High, Low: 2A, 2A Voltage - Isolation: 5000Vrms Approval Agency: UL Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 60ns, 60ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 400ns, 400ns Pulse Width Distortion (Max): 100ns Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 15V ~ 30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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CAT3200HU2-GT3 | onsemi |
Description: IC REG CHARGE PUMP ADJ/5V 8UDFN Packaging: Bulk Package / Case: 8-UFDFN Exposed Pad Output Type: Adjustable (Fixed) Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 100mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 2MHz Voltage - Input (Max): 4.5V Topology: Charge Pump Supplier Device Package: 8-UDFN (2x2) Synchronous Rectifier: No Voltage - Output (Max): 6V Voltage - Input (Min): 2.2V Voltage - Output (Min/Fixed): 2.7V (5V) |
auf Bestellung 538399 Stücke: Lieferzeit 10-14 Tag (e) |
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MBRF10H150CTG | onsemi |
Description: DIODE ARR SCHOTT 150V 5A TO220FP Current - Reverse Leakage @ Vr: 45 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 150 V Operating Temperature - Junction: -20°C ~ 150°C Supplier Device Package: TO-220FP Current - Average Rectified (Io) (per Diode): 5A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
auf Bestellung 103959 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTZD3155CT2G-M07 | onsemi |
Description: RECTIFIERS Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MC74HC574ADTR2G | onsemi |
Description: IC FF D-TYPE 1-ELE 8-BIT Packaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 7.8mA, 7.8mA Trigger Type: Positive Edge Clock Frequency: 35 MHz Input Capacitance: 10 pF Supplier Device Package: 20-TSSOP Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF Number of Bits per Element: 8 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC74HC574ADTR2G | onsemi |
Description: IC FF D-TYPE 1-ELE 8-BIT Packaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 7.8mA, 7.8mA Trigger Type: Positive Edge Clock Frequency: 35 MHz Input Capacitance: 10 pF Supplier Device Package: 20-TSSOP Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF Number of Bits per Element: 8 |
auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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MC74HC574ADTR2G-Q | onsemi |
Description: IC FF D-TYPE 1-ELE 8-BIT Packaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 7.8mA, 7.8mA Trigger Type: Positive Edge Clock Frequency: 35 MHz Input Capacitance: 10 pF Supplier Device Package: 20-TSSOP Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF Number of Bits per Element: 8 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NVBG030N120M3S-IE | onsemi |
Description: SIC MOS D2PAK-7L 30MOHM M3S 1200 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +22V, -10V Drive Voltage (Max Rds On, Min Rds On): 18V Grade: Automotive Supplier Device Package: D2PAK-7 Vgs(th) (Max) @ Id: 4.4V @ 15mA Power Dissipation (Max): 348W (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
auf Bestellung 3200 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG030N120M3S-IE | onsemi |
Description: SIC MOS D2PAK-7L 30MOHM M3S 1200 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +22V, -10V Drive Voltage (Max Rds On, Min Rds On): 18V Grade: Automotive Supplier Device Package: D2PAK-7 Vgs(th) (Max) @ Id: 4.4V @ 15mA Power Dissipation (Max): 348W (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) |
auf Bestellung 3200 Stücke: Lieferzeit 10-14 Tag (e) |
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MOC3022M | onsemi |
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIP Packaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Triac Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.15V Voltage - Isolation: 4170Vrms Approval Agency: UL Current - Hold (Ih): 100µA (Typ) Supplier Device Package: 6-DIP Zero Crossing Circuit: No Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Voltage - Off State: 400 V Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 131102 Stücke: Lieferzeit 10-14 Tag (e) |
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RS1G | onsemi |
Description: DIODE STANDARD 400V 1A DO214AC Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 10pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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RS1G | onsemi |
Description: DIODE STANDARD 400V 1A DO214AC Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 10pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
auf Bestellung 65698 Stücke: Lieferzeit 10-14 Tag (e) |
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MC74VHC259DTG | onsemi |
Description: IC D-TYPE ADDR 1:8 16-TSSOP Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Bulk Supplier Device Package: 16-TSSOP Delay Time - Propagation: 4.9ns Current - Output High, Low: 8mA, 8mA Independent Circuits: 1 Voltage - Supply: 2V ~ 5.5V Operating Temperature: -55°C ~ 125°C Logic Type: D-Type, Addressable Circuit: 1:8 Mounting Type: Surface Mount Output Type: Standard |
auf Bestellung 68216 Stücke: Lieferzeit 10-14 Tag (e) |
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MC74VHC259DG | onsemi |
Description: IC D-TYPE ADDR 1:8 16-SOIC Supplier Device Package: 16-SOIC Delay Time - Propagation: 4.9ns Current - Output High, Low: 8mA, 8mA Independent Circuits: 1 Voltage - Supply: 2V ~ 5.5V Operating Temperature: -55°C ~ 125°C Logic Type: D-Type, Addressable Circuit: 1:8 Mounting Type: Surface Mount Output Type: Standard Package / Case: 16-SOIC (0.154", 3.90mm Width) Packaging: Bulk |
auf Bestellung 19488 Stücke: Lieferzeit 10-14 Tag (e) |
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MC74ACT259DR2 | onsemi |
Description: IC D-TYPE ADDR 1:8 16-SOIC Output Type: Standard Package / Case: 16-SOIC (0.154", 3.90mm Width) Packaging: Bulk Supplier Device Package: 16-SOIC Delay Time - Propagation: 6.5ns Current - Output High, Low: 24mA, 24mA Independent Circuits: 1 Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C Logic Type: D-Type, Addressable Circuit: 1:8 Mounting Type: Surface Mount |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ4C075033L8S | onsemi |
Description: 750V/33MO,SICFET,G4,TOLL Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 230A, 12V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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UJ4C075033L8S | onsemi |
Description: 750V/33MO,SICFET,G4,TOLL Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 230A, 12V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V |
auf Bestellung 1245 Stücke: Lieferzeit 10-14 Tag (e) |
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FSQ0165RLX | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8LSOP Power (Watts): 15 W Control Features: Sync Voltage - Start Up: 12 V Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Supplier Device Package: 8-LSOP Voltage - Supply (Vcc/Vdd): 8V ~ 20V Topology: Flyback Output Isolation: Isolated Voltage - Breakdown: 650V Internal Switch(s): Yes Frequency - Switching: 55kHz ~ 67kHz Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SMD, Gull Wing Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NTTFS6H880NLTAG | onsemi |
Description: MOSFET N-CH 80V 6.6A/22A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V |
auf Bestellung 7327 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS6H880NLWFTAG | onsemi |
Description: MOSFET N-CH 80V 6.6A/22A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 2218 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS6H880NLTAG | onsemi |
Description: MOSFET - POWER, SINGLE N-CHANNEL Packaging: Bulk Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 2V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVTFS6H880NWFTAG | onsemi |
Description: MOSFET N-CH 80V 6.3A/21A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NVTFS6H880NWFTAG | onsemi |
Description: MOSFET N-CH 80V 6.3A/21A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NTTFS6H880NTAG | onsemi |
Description: T8 80V U8FL Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V |
Produkt ist nicht verfügbar |
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NTTFS6H880NTAG | onsemi |
Description: T8 80V U8FL Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc) Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V |
Produkt ist nicht verfügbar |
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MM74HC14SJX | onsemi |
Description: IC INV 6-CIR 1-IN 14-SOP Packaging: Tape & Reel (TR) Features: Schmitt Trigger Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 5.2mA, 5.2mA Number of Inputs: 1 Supplier Device Package: 14-SOP Input Logic Level - High: 1.5V ~ 4.2V Input Logic Level - Low: 0.3V ~ 1.2V Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF Number of Circuits: 6 Current - Quiescent (Max): 2 µA |
Produkt ist nicht verfügbar |
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FQP12N60C | onsemi |
Description: MOSFET N-CH 600V 12A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V Power Dissipation (Max): 225W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V |
Produkt ist nicht verfügbar |
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HGT1S12N60A4DS | onsemi |
Description: IGBT 600V 54A TO-263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 30 ns Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 17ns/96ns Switching Energy: 55µJ (on), 50µJ (off) Test Condition: 390V, 12A, 10Ohm, 15V Gate Charge: 78 nC Current - Collector (Ic) (Max): 54 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 96 A Power - Max: 167 W |
Produkt ist nicht verfügbar |
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FCD850N80Z | onsemi |
Description: MOSFET N-CH 800V 6A DPAK Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4.5V @ 600µA Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
auf Bestellung 17500 Stücke: Lieferzeit 10-14 Tag (e) |
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FCD850N80Z | onsemi |
Description: MOSFET N-CH 800V 6A DPAK Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4.5V @ 600µA Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 18066 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP650N80Z | onsemi |
Description: MOSFET N-CH 800V 10A TO220 Input Capacitance (Ciss) (Max) @ Vds: 1565 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-220 Vgs(th) (Max) @ Id: 4.5V @ 800µA Power Dissipation (Max): 162W (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Bulk |
auf Bestellung 1954 Stücke: Lieferzeit 10-14 Tag (e) |
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FCU850N80Z | onsemi |
Description: MOSFET N-CH 800V 6A IPAK Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 4.5V @ 600µA Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Packaging: Tube |
Produkt ist nicht verfügbar |
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FCU2250N80Z | onsemi |
Description: MOSFET N-CH 800V 2.6A IPAK Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 100 V Packaging: Tube Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: IPAK Vgs(th) (Max) @ Id: 4.5V @ 260µA Power Dissipation (Max): 39W (Tc) Rds On (Max) @ Id, Vgs: 2.25Ohm @ 1.3A, 10V Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-251-3 Short Leads, IPak, TO-251AA |
Produkt ist nicht verfügbar |
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FGH40N60SFTU | onsemi |
Description: IGBT FIELD STOP 600V 80A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 25ns/115ns Switching Energy: 1.13mJ (on), 310µJ (off) Test Condition: 400V, 40A, 10Ohm, 15V Gate Charge: 120 nC Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 290 W |
Produkt ist nicht verfügbar |
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SGH40N60UFTU | onsemi |
Description: IGBT 600V 40A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A Supplier Device Package: TO-3P Td (on/off) @ 25°C: 15ns/65ns Switching Energy: 160µJ (on), 200µJ (off) Test Condition: 300V, 20A, 10Ohm, 15V Gate Charge: 97 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 160 A Power - Max: 160 W |
Produkt ist nicht verfügbar |
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74ACT245PC | onsemi |
 Description: IC TXRX 4.5V/5.5V 20-PDIPPackaging: Tube Package / Case: 20-DIP (0.300", 7.62mm) Output Type: 3-State Mounting Type: Through Hole Number of Elements: 1 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 8 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 20-PDIP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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DTA124XM3T5G | onsemi |
Description: TRANS PREBIAS PNP 50V SOT723 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-723 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
auf Bestellung 88000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTA124XM3T5G | onsemi |
Description: TRANS PREBIAS PNP 50V SOT723 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-723 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms Resistors Included: R1 and R2 |
auf Bestellung 95999 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5938B | onsemi |
Description: DIODE ZENER 36V 3W AXIAL Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 38 Ohms Supplier Device Package: Axial Power - Max: 3 W Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 27.4 V |
Produkt ist nicht verfügbar |
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MMBD1403A | onsemi |
Description: DIODE ARR GP 175V 200MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 175 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 175 V |
Produkt ist nicht verfügbar |
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FCP11N60N | onsemi |
Description: MOSFET N-CH 600V 10.8A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 5.4A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 35.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 100 V |
Produkt ist nicht verfügbar |
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BC640BU | onsemi |
Description: TRANS PNP 80V 1A TO-92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BC640 | onsemi |
Description: TRANS PNP 80V 0.5A TO92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Frequency - Transition: 150MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC33204DTBR2G | onsemi |
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 105°C (TA) Current - Supply: 900µA (x4 Channels) Slew Rate: 1V/µs Gain Bandwidth Product: 2.2 MHz Current - Input Bias: 80 nA Voltage - Input Offset: 10 mV Supplier Device Package: 14-TSSOP Number of Circuits: 4 Current - Output / Channel: 80 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 12 V |
auf Bestellung 35000 Stücke: Lieferzeit 10-14 Tag (e) |
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MC33204DTBR2G | onsemi |
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Standard (General Purpose) Operating Temperature: -40°C ~ 105°C (TA) Current - Supply: 900µA (x4 Channels) Slew Rate: 1V/µs Gain Bandwidth Product: 2.2 MHz Current - Input Bias: 80 nA Voltage - Input Offset: 10 mV Supplier Device Package: 14-TSSOP Number of Circuits: 4 Current - Output / Channel: 80 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 12 V |
auf Bestellung 35696 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF7N65CYDTU | onsemi |
Description: MOSFET N-CH 650V 7A TO220F-3 Packaging: Tube Package / Case: TO-220-3 Full Pack, Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V Power Dissipation (Max): 52W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 (Y-Forming) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 25 V |
Produkt ist nicht verfügbar |
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| FGA30N60LSDTU | onsemi |
Description: IGBT TRENCH FS 600V 60A TO-3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 35 ns Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A Supplier Device Package: TO-3P IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 18ns/250ns Switching Energy: 1.1mJ (on), 21mJ (off) Test Condition: 400V, 30A, 6.8Ohm, 15V Gate Charge: 225 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 90 A Power - Max: 480 W |
Produkt ist nicht verfügbar |
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MM74HC574WMX | onsemi |
Description: IC FF D-TYPE 1-ELE 8-BIT 20-SOIC Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 8 µA Current - Output High, Low: 7.8mA, 7.8mA Trigger Type: Positive Edge Clock Frequency: 35 MHz Input Capacitance: 5 pF Supplier Device Package: 20-SOIC Max Propagation Delay @ V, Max CL: 27ns @ 6V, 150pF Number of Bits per Element: 8 |
Produkt ist nicht verfügbar |
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NSVBCP5310MTWG | onsemi |
Description: TRANS PNP 80V 1A 3WDFNW Packaging: Cut Tape (CT) Package / Case: 3-WDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 130MHz Supplier Device Package: 3-WDFNW (2x2) Grade: Automotive Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 875 mW Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NSVBCP5310MTWG | onsemi |
Description: TRANS PNP 80V 1A 3WDFNW Packaging: Bulk Package / Case: 3-WDFN Exposed Pad Mounting Type: Surface Mount, Wettable Flank Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 130MHz Supplier Device Package: 3-WDFNW (2x2) Grade: Automotive Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 875 mW Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MBR30L45CTH | onsemi |
Description: 30A 45V TO220 SCH HFREE Packaging: Bulk |
auf Bestellung 400721 Stücke: Lieferzeit 10-14 Tag (e) |
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| NZ8F9V1MX2WT5G |
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Hersteller: onsemi
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Package / Case: 2-XDFN
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Supplier Device Package: 2-X2DFNW (1x0.6)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Package / Case: 2-XDFN
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Supplier Device Package: 2-X2DFNW (1x0.6)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
auf Bestellung 4565 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 48+ | 0.44 EUR |
| 74+ | 0.29 EUR |
| 190+ | 0.11 EUR |
| 500+ | 0.1 EUR |
| 1000+ | 0.069 EUR |
| 2000+ | 0.064 EUR |
| NSVBASH21MX2WT5G |
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Hersteller: onsemi
Description: DIODE STANDARD 250V 0.2A X2DFNW2
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 250 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 2-X2DFNW (1x0.6)
Current - Average Rectified (Io): 200mA
Description: DIODE STANDARD 250V 0.2A X2DFNW2
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 250 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 2-X2DFNW (1x0.6)
Current - Average Rectified (Io): 200mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NSVBASH21MX2WT5G |
|
Hersteller: onsemi
Description: DIODE STANDARD 250V 0.2A X2DFNW2
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 250 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 2-X2DFNW (1x0.6)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 250V 0.2A X2DFNW2
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 250 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 2-X2DFNW (1x0.6)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Packaging: Cut Tape (CT)
auf Bestellung 6460 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 0.77 EUR |
| 56+ | 0.38 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.17 EUR |
| 2000+ | 0.15 EUR |
| SZNZ8F9V1MX2WT5G |
|
Hersteller: onsemi
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Grade: Automotive
Supplier Device Package: 2-X2DFNW (1x0.6)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Grade: Automotive
Supplier Device Package: 2-X2DFNW (1x0.6)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SZNZ8F9V1MX2WT5G |
|
Hersteller: onsemi
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Package / Case: 2-XDFN
Tolerance: ±5%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Grade: Automotive
Supplier Device Package: 2-X2DFNW (1x0.6)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Package / Case: 2-XDFN
Tolerance: ±5%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Grade: Automotive
Supplier Device Package: 2-X2DFNW (1x0.6)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZNZ8F5V1MX2WT5G |
|
Hersteller: onsemi
Description: DIODE ZENER 5.1V 250MW 2-X2DFNW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Grade: Automotive
Supplier Device Package: 2-X2DFNW (1x0.6)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Description: DIODE ZENER 5.1V 250MW 2-X2DFNW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Grade: Automotive
Supplier Device Package: 2-X2DFNW (1x0.6)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
auf Bestellung 136000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8000+ | 0.1 EUR |
| 16000+ | 0.1 EUR |
| 24000+ | 0.1 EUR |
| 40000+ | 0.094 EUR |
| 56000+ | 0.084 EUR |
| 80000+ | 0.082 EUR |
| SZNZ8F5V1MX2WT5G |
|
Hersteller: onsemi
Description: DIODE ZENER 5.1V 250MW 2-X2DFNW
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Grade: Automotive
Supplier Device Package: 2-X2DFNW (1x0.6)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Tolerance: ±5%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 5.1V 250MW 2-X2DFNW
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Grade: Automotive
Supplier Device Package: 2-X2DFNW (1x0.6)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 136000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 34+ | 0.63 EUR |
| AR0145CS1C00SMKA0-CP-E |
|
Hersteller: onsemi
Description: 1MP, 1/4.3, GLOBAL SHUTTER IMAGE
Voltage - Supply: 1.2V ~ 2.8V
Operating Temperature: -30°C ~ 85°C
Type: CMOS
Package / Case: 47-VFBGA, CSPBGA
Packaging: Tray
Frames per Second: 120.0
Supplier Device Package: 47-ODCSP (5.74x4.42)
Active Pixel Array: 1280H x 800V
Pixel Size: 2.8µm x 2.8µm
Description: 1MP, 1/4.3, GLOBAL SHUTTER IMAGE
Voltage - Supply: 1.2V ~ 2.8V
Operating Temperature: -30°C ~ 85°C
Type: CMOS
Package / Case: 47-VFBGA, CSPBGA
Packaging: Tray
Frames per Second: 120.0
Supplier Device Package: 47-ODCSP (5.74x4.42)
Active Pixel Array: 1280H x 800V
Pixel Size: 2.8µm x 2.8µm
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 72.97 EUR |
| 10+ | 59.51 EUR |
| 25+ | 56.41 EUR |
| AR0145CS1C28SMKA0-CP-E |
|
Hersteller: onsemi
Description: 1MP, 1/4.3, GLOBAL SHUTTER IMAGE
Frames per Second: 120.0
Supplier Device Package: 47-ODCSP (5.74x4.42)
Active Pixel Array: 1280H x 800V
Pixel Size: 2.8µm x 2.8µm
Voltage - Supply: 1.2V ~ 2.8V
Operating Temperature: -30°C ~ 85°C
Type: CMOS
Package / Case: 47-VFBGA, CSPBGA
Packaging: Tray
Description: 1MP, 1/4.3, GLOBAL SHUTTER IMAGE
Frames per Second: 120.0
Supplier Device Package: 47-ODCSP (5.74x4.42)
Active Pixel Array: 1280H x 800V
Pixel Size: 2.8µm x 2.8µm
Voltage - Supply: 1.2V ~ 2.8V
Operating Temperature: -30°C ~ 85°C
Type: CMOS
Package / Case: 47-VFBGA, CSPBGA
Packaging: Tray
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 72.97 EUR |
| 10+ | 59.51 EUR |
| 25+ | 56.41 EUR |
| FOD3120TS |
|
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Pulse Width Distortion (Max): 100ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Pulse Width Distortion (Max): 100ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT3200HU2-GT3 |
|
Hersteller: onsemi
Description: IC REG CHARGE PUMP ADJ/5V 8UDFN
Packaging: Bulk
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable (Fixed)
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2MHz
Voltage - Input (Max): 4.5V
Topology: Charge Pump
Supplier Device Package: 8-UDFN (2x2)
Synchronous Rectifier: No
Voltage - Output (Max): 6V
Voltage - Input (Min): 2.2V
Voltage - Output (Min/Fixed): 2.7V (5V)
Description: IC REG CHARGE PUMP ADJ/5V 8UDFN
Packaging: Bulk
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable (Fixed)
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2MHz
Voltage - Input (Max): 4.5V
Topology: Charge Pump
Supplier Device Package: 8-UDFN (2x2)
Synchronous Rectifier: No
Voltage - Output (Max): 6V
Voltage - Input (Min): 2.2V
Voltage - Output (Min/Fixed): 2.7V (5V)
auf Bestellung 538399 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 235+ | 2.32 EUR |
| MBRF10H150CTG |
|
Hersteller: onsemi
Description: DIODE ARR SCHOTT 150V 5A TO220FP
Current - Reverse Leakage @ Vr: 45 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -20°C ~ 150°C
Supplier Device Package: TO-220FP
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: DIODE ARR SCHOTT 150V 5A TO220FP
Current - Reverse Leakage @ Vr: 45 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -20°C ~ 150°C
Supplier Device Package: TO-220FP
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 103959 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 329+ | 1.64 EUR |
| MC74HC574ADTR2G |
|
Hersteller: onsemi
Description: IC FF D-TYPE 1-ELE 8-BIT
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Number of Bits per Element: 8
Description: IC FF D-TYPE 1-ELE 8-BIT
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Number of Bits per Element: 8
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC574ADTR2G |
|
Hersteller: onsemi
Description: IC FF D-TYPE 1-ELE 8-BIT
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Number of Bits per Element: 8
Description: IC FF D-TYPE 1-ELE 8-BIT
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Number of Bits per Element: 8
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 24+ | 0.88 EUR |
| 35+ | 0.62 EUR |
| 39+ | 0.55 EUR |
| 100+ | 0.48 EUR |
| 250+ | 0.44 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.4 EUR |
| MC74HC574ADTR2G-Q |
|
Hersteller: onsemi
Description: IC FF D-TYPE 1-ELE 8-BIT
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Number of Bits per Element: 8
Description: IC FF D-TYPE 1-ELE 8-BIT
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Number of Bits per Element: 8
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NVBG030N120M3S-IE |
|
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 30MOHM M3S 1200
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Power Dissipation (Max): 348W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Description: SIC MOS D2PAK-7L 30MOHM M3S 1200
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Power Dissipation (Max): 348W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 27.76 EUR |
| NVBG030N120M3S-IE |
|
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 30MOHM M3S 1200
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Power Dissipation (Max): 348W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Description: SIC MOS D2PAK-7L 30MOHM M3S 1200
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Power Dissipation (Max): 348W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 49.36 EUR |
| 10+ | 35.84 EUR |
| 50+ | 33.99 EUR |
| MOC3022M |
|
Hersteller: onsemi
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 131102 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.62 EUR |
| 50+ | 0.89 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.64 EUR |
| 2000+ | 0.61 EUR |
| 5000+ | 0.57 EUR |
| 10000+ | 0.55 EUR |
| 25000+ | 0.51 EUR |
| RS1G |
|
Hersteller: onsemi
Description: DIODE STANDARD 400V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 400V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7500+ | 0.18 EUR |
| 15000+ | 0.17 EUR |
| RS1G |
|
Hersteller: onsemi
Description: DIODE STANDARD 400V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 400V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 65698 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 0.92 EUR |
| 38+ | 0.56 EUR |
| 52+ | 0.4 EUR |
| 100+ | 0.36 EUR |
| 500+ | 0.26 EUR |
| MC74VHC259DTG |
|
Hersteller: onsemi
Description: IC D-TYPE ADDR 1:8 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Supplier Device Package: 16-TSSOP
Delay Time - Propagation: 4.9ns
Current - Output High, Low: 8mA, 8mA
Independent Circuits: 1
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: D-Type, Addressable
Circuit: 1:8
Mounting Type: Surface Mount
Output Type: Standard
Description: IC D-TYPE ADDR 1:8 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Supplier Device Package: 16-TSSOP
Delay Time - Propagation: 4.9ns
Current - Output High, Low: 8mA, 8mA
Independent Circuits: 1
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: D-Type, Addressable
Circuit: 1:8
Mounting Type: Surface Mount
Output Type: Standard
auf Bestellung 68216 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 685+ | 0.8 EUR |
| MC74VHC259DG |
|
Hersteller: onsemi
Description: IC D-TYPE ADDR 1:8 16-SOIC
Supplier Device Package: 16-SOIC
Delay Time - Propagation: 4.9ns
Current - Output High, Low: 8mA, 8mA
Independent Circuits: 1
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: D-Type, Addressable
Circuit: 1:8
Mounting Type: Surface Mount
Output Type: Standard
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Description: IC D-TYPE ADDR 1:8 16-SOIC
Supplier Device Package: 16-SOIC
Delay Time - Propagation: 4.9ns
Current - Output High, Low: 8mA, 8mA
Independent Circuits: 1
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: D-Type, Addressable
Circuit: 1:8
Mounting Type: Surface Mount
Output Type: Standard
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
auf Bestellung 19488 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 660+ | 0.81 EUR |
| MC74ACT259DR2 |
|
Hersteller: onsemi
Description: IC D-TYPE ADDR 1:8 16-SOIC
Output Type: Standard
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Supplier Device Package: 16-SOIC
Delay Time - Propagation: 6.5ns
Current - Output High, Low: 24mA, 24mA
Independent Circuits: 1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: D-Type, Addressable
Circuit: 1:8
Mounting Type: Surface Mount
Description: IC D-TYPE ADDR 1:8 16-SOIC
Output Type: Standard
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Supplier Device Package: 16-SOIC
Delay Time - Propagation: 6.5ns
Current - Output High, Low: 24mA, 24mA
Independent Circuits: 1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: D-Type, Addressable
Circuit: 1:8
Mounting Type: Surface Mount
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 505+ | 1.08 EUR |
| UJ4C075033L8S |
|
Hersteller: onsemi
Description: 750V/33MO,SICFET,G4,TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 230A, 12V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Description: 750V/33MO,SICFET,G4,TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 230A, 12V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| UJ4C075033L8S |
|
Hersteller: onsemi
Description: 750V/33MO,SICFET,G4,TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 230A, 12V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Description: 750V/33MO,SICFET,G4,TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 230A, 12V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
auf Bestellung 1245 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 28.85 EUR |
| 10+ | 20.29 EUR |
| 50+ | 17.08 EUR |
| FSQ0165RLX |
|
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8LSOP
Power (Watts): 15 W
Control Features: Sync
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: 8-LSOP
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 55kHz ~ 67kHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: IC OFFLINE SWITCH FLYBACK 8LSOP
Power (Watts): 15 W
Control Features: Sync
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: 8-LSOP
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 55kHz ~ 67kHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTTFS6H880NLTAG |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 6.6A/22A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Description: MOSFET N-CH 80V 6.6A/22A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
auf Bestellung 7327 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.7 EUR |
| 20+ | 1.06 EUR |
| 100+ | 0.69 EUR |
| 500+ | 0.54 EUR |
| NVTFS6H880NLWFTAG |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 6.6A/22A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 6.6A/22A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 2218 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.24 EUR |
| 15+ | 1.4 EUR |
| 100+ | 0.93 EUR |
| 500+ | 0.73 EUR |
| NVTFS6H880NLTAG |
|
Hersteller: onsemi
Description: MOSFET - POWER, SINGLE N-CHANNEL
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET - POWER, SINGLE N-CHANNEL
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.65 EUR |
| 21+ | 1.02 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.46 EUR |
| 2000+ | 0.42 EUR |
| 5000+ | 0.37 EUR |
| 10000+ | 0.35 EUR |
| NVTFS6H880NWFTAG |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 6.3A/21A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 6.3A/21A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NVTFS6H880NWFTAG |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 6.3A/21A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 6.3A/21A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTTFS6H880NTAG |
|
Hersteller: onsemi
Description: T8 80V U8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Description: T8 80V U8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
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| NTTFS6H880NTAG |
|
Hersteller: onsemi
Description: T8 80V U8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
Description: T8 80V U8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 370 pF @ 40 V
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| MM74HC14SJX |
|
Hersteller: onsemi
Description: IC INV 6-CIR 1-IN 14-SOP
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Description: IC INV 6-CIR 1-IN 14-SOP
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.2V
Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
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| FQP12N60C |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 225W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
Description: MOSFET N-CH 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 225W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
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| HGT1S12N60A4DS |
|
Hersteller: onsemi
Description: IGBT 600V 54A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 17ns/96ns
Switching Energy: 55µJ (on), 50µJ (off)
Test Condition: 390V, 12A, 10Ohm, 15V
Gate Charge: 78 nC
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 167 W
Description: IGBT 600V 54A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 17ns/96ns
Switching Energy: 55µJ (on), 50µJ (off)
Test Condition: 390V, 12A, 10Ohm, 15V
Gate Charge: 78 nC
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 167 W
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| FCD850N80Z |
|
Hersteller: onsemi
Description: MOSFET N-CH 800V 6A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 800V 6A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.83 EUR |
| FCD850N80Z |
|
Hersteller: onsemi
Description: MOSFET N-CH 800V 6A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 800V 6A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 18066 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.82 EUR |
| 10+ | 3.8 EUR |
| 100+ | 2.63 EUR |
| 500+ | 2.24 EUR |
| FCP650N80Z |
|
Hersteller: onsemi
Description: MOSFET N-CH 800V 10A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1565 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 800µA
Power Dissipation (Max): 162W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
Description: MOSFET N-CH 800V 10A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1565 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 800µA
Power Dissipation (Max): 162W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
auf Bestellung 1954 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 168+ | 3.24 EUR |
| FCU850N80Z |
|
Hersteller: onsemi
Description: MOSFET N-CH 800V 6A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Description: MOSFET N-CH 800V 6A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
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| FCU2250N80Z |
|
Hersteller: onsemi
Description: MOSFET N-CH 800V 2.6A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 100 V
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 2.25Ohm @ 1.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Description: MOSFET N-CH 800V 2.6A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 585 pF @ 100 V
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: IPAK
Vgs(th) (Max) @ Id: 4.5V @ 260µA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 2.25Ohm @ 1.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGH40N60SFTU |
|
Hersteller: onsemi
Description: IGBT FIELD STOP 600V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 25ns/115ns
Switching Energy: 1.13mJ (on), 310µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
Description: IGBT FIELD STOP 600V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 25ns/115ns
Switching Energy: 1.13mJ (on), 310µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
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Im Einkaufswagen
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| SGH40N60UFTU |
|
Hersteller: onsemi
Description: IGBT 600V 40A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 97 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
Description: IGBT 600V 40A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
Supplier Device Package: TO-3P
Td (on/off) @ 25°C: 15ns/65ns
Switching Energy: 160µJ (on), 200µJ (off)
Test Condition: 300V, 20A, 10Ohm, 15V
Gate Charge: 97 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 160 W
Produkt ist nicht verfügbar
Im Einkaufswagen
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| 74ACT245PC |
|
Hersteller: onsemi
Description: IC TXRX 4.5V/5.5V 20-PDIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: 3-State
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-PDIP
Description: IC TXRX 4.5V/5.5V 20-PDIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: 3-State
Mounting Type: Through Hole
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-PDIP
Produkt ist nicht verfügbar
Im Einkaufswagen
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| DTA124XM3T5G |
|
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 88000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8000+ | 0.089 EUR |
| 16000+ | 0.081 EUR |
| 24000+ | 0.076 EUR |
| 40000+ | 0.071 EUR |
| 56000+ | 0.069 EUR |
| 80000+ | 0.067 EUR |
| DTA124XM3T5G |
|
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V SOT723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-723
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Resistors Included: R1 and R2
auf Bestellung 95999 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 42+ | 0.5 EUR |
| 69+ | 0.31 EUR |
| 110+ | 0.19 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| 2000+ | 0.11 EUR |
| 1N5938B |
|
Hersteller: onsemi
Description: DIODE ZENER 36V 3W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 38 Ohms
Supplier Device Package: Axial
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27.4 V
Description: DIODE ZENER 36V 3W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 38 Ohms
Supplier Device Package: Axial
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 27.4 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MMBD1403A |
|
Hersteller: onsemi
Description: DIODE ARR GP 175V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 175 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 175 V
Description: DIODE ARR GP 175V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 175 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 175 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCP11N60N |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 10.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 5.4A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 100 V
Description: MOSFET N-CH 600V 10.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 5.4A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC640BU |
|
Hersteller: onsemi
Description: TRANS PNP 80V 1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: TRANS PNP 80V 1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BC640 |
|
Hersteller: onsemi
Description: TRANS PNP 80V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
Description: TRANS PNP 80V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC33204DTBR2G |
|
Hersteller: onsemi
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 105°C (TA)
Current - Supply: 900µA (x4 Channels)
Slew Rate: 1V/µs
Gain Bandwidth Product: 2.2 MHz
Current - Input Bias: 80 nA
Voltage - Input Offset: 10 mV
Supplier Device Package: 14-TSSOP
Number of Circuits: 4
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 12 V
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 105°C (TA)
Current - Supply: 900µA (x4 Channels)
Slew Rate: 1V/µs
Gain Bandwidth Product: 2.2 MHz
Current - Input Bias: 80 nA
Voltage - Input Offset: 10 mV
Supplier Device Package: 14-TSSOP
Number of Circuits: 4
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 12 V
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.7 EUR |
| 5000+ | 0.68 EUR |
| MC33204DTBR2G |
|
Hersteller: onsemi
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 105°C (TA)
Current - Supply: 900µA (x4 Channels)
Slew Rate: 1V/µs
Gain Bandwidth Product: 2.2 MHz
Current - Input Bias: 80 nA
Voltage - Input Offset: 10 mV
Supplier Device Package: 14-TSSOP
Number of Circuits: 4
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 12 V
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 105°C (TA)
Current - Supply: 900µA (x4 Channels)
Slew Rate: 1V/µs
Gain Bandwidth Product: 2.2 MHz
Current - Input Bias: 80 nA
Voltage - Input Offset: 10 mV
Supplier Device Package: 14-TSSOP
Number of Circuits: 4
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 12 V
auf Bestellung 35696 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.52 EUR |
| 19+ | 1.11 EUR |
| 25+ | 0.99 EUR |
| 100+ | 0.87 EUR |
| 250+ | 0.81 EUR |
| 500+ | 0.77 EUR |
| 1000+ | 0.75 EUR |
| FQPF7N65CYDTU |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 7A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 25 V
Description: MOSFET N-CH 650V 7A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3.5A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1245 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGA30N60LSDTU |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 600V 60A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/250ns
Switching Energy: 1.1mJ (on), 21mJ (off)
Test Condition: 400V, 30A, 6.8Ohm, 15V
Gate Charge: 225 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 480 W
Description: IGBT TRENCH FS 600V 60A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 18ns/250ns
Switching Energy: 1.1mJ (on), 21mJ (off)
Test Condition: 400V, 30A, 6.8Ohm, 15V
Gate Charge: 225 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 480 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM74HC574WMX |
|
Hersteller: onsemi
Description: IC FF D-TYPE 1-ELE 8-BIT 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 5 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 150pF
Number of Bits per Element: 8
Description: IC FF D-TYPE 1-ELE 8-BIT 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 5 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 150pF
Number of Bits per Element: 8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVBCP5310MTWG |
|
Hersteller: onsemi
Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Cut Tape (CT)
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
Qualification: AEC-Q101
Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Cut Tape (CT)
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVBCP5310MTWG |
|
Hersteller: onsemi
Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Bulk
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
Qualification: AEC-Q101
Description: TRANS PNP 80V 1A 3WDFNW
Packaging: Bulk
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: 3-WDFNW (2x2)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 875 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MBR30L45CTH |
|
auf Bestellung 400721 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 284+ | 1.95 EUR |