| Foto | Bezeichnung | Hersteller | Beschreibung |
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UJ3N120070K3S | onsemi |
Description: JFET N-CH 1200V 33.5A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 100V Voltage - Breakdown (V(BR)GSS): 1200 V Current Drain (Id) - Max: 33.5 A Supplier Device Package: TO-247-3 Drain to Source Voltage (Vdss): 1200 V Power - Max: 254 W Resistance - RDS(On): 90 mOhms |
auf Bestellung 1679 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ4C075023K4S | onsemi |
Description: 750V/23MOHM, SIC, CASCODE, G4, TPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 66A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V Power Dissipation (Max): 306W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V |
auf Bestellung 1133 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ3N120065K3S | onsemi |
Description: JFET N-CH 1.2KV 34A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 1008pF @ 100V Voltage - Breakdown (V(BR)GSS): 1200 V Current Drain (Id) - Max: 34 A Supplier Device Package: TO-247-3 Drain to Source Voltage (Vdss): 1200 V Power - Max: 254 W Resistance - RDS(On): 55 mOhms Current - Drain (Idss) @ Vds (Vgs=0): 5 µA @ 1200 V |
auf Bestellung 1996 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ4C075018K3S | onsemi |
Description: SICFET N-CH 750V 81A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 81A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 12V Power Dissipation (Max): 385W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-3 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1422 pF @ 100 V |
auf Bestellung 5111 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ4SC075011K4S | onsemi |
Description: 750V/11MOHM, SIC, STACKED CASCODPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 10mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V |
auf Bestellung 917 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ4SC075009K4S | onsemi |
Description: 750V/9MOHM, SIC, STACKED CASCODEPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 70A, 12V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 10mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 400 V |
auf Bestellung 422 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ3N120035K3S | onsemi |
Description: JFET N-CH 1200V 63A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 2145pF @ 100V Voltage - Breakdown (V(BR)GSS): 1200 V Current Drain (Id) - Max: 63 A Supplier Device Package: TO-247-3 Drain to Source Voltage (Vdss): 1200 V Power - Max: 429 W Resistance - RDS(On): 45 mOhms |
auf Bestellung 3963 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ4SC075006K4S | onsemi |
Description: 750V/6MOHM, SIC, STACKED CASCODEPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 12V Power Dissipation (Max): 714W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V |
auf Bestellung 606 Stücke: Lieferzeit 10-14 Tag (e) |
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UF3SC120009K4S | onsemi |
Description: SICFET N-CH 1200V 120A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 12V Power Dissipation (Max): 789W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 8512 pF @ 100 V |
auf Bestellung 619 Stücke: Lieferzeit 10-14 Tag (e) |
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UF3SC065007K4S | onsemi |
Description: MOSFET N-CH 650V 120A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 12V Power Dissipation (Max): 789W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 100 V |
auf Bestellung 987 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN4174IP5X | onsemi |
Description: IC OPAMP VFB 1 CIRCUIT SC70-5Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Voltage Feedback Operating Temperature: -40°C ~ 85°C Current - Supply: 200µA Slew Rate: 3V/µs Gain Bandwidth Product: 3.7 MHz Current - Input Bias: 5 pA Voltage - Input Offset: 8 mV Supplier Device Package: SC-70-5 Number of Circuits: 1 Current - Output / Channel: 33 mA -3db Bandwidth: 3.7 MHz Voltage - Supply Span (Min): 2.3 V Voltage - Supply Span (Max): 5.25 V |
Produkt ist nicht verfügbar |
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NCP81102MNTXG | onsemi |
Description: IC REG BUCK CTLR 32QFN Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Supplier Device Package: 32-QFN (5x5) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NCP81102MNTXG | onsemi |
Description: IC REG BUCK CTLR 32QFN Packaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Supplier Device Package: 32-QFN (5x5) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NCP81102MNTWG | onsemi |
Description: IC REG BUCK CTLR 32QFN Packaging: Tape & Reel (TR) Package / Case: 32-VFQFN Exposed Pad Mounting Type: Surface Mount Supplier Device Package: 32-QFN (5x5) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MC74AC153DR2 | onsemi |
Description: MUX 1-ELEMENT 8-IN 16-PIN SOICPackaging: Bulk |
auf Bestellung 3439 Stücke: Lieferzeit 10-14 Tag (e) |
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MC74ACT151DR2 | onsemi |
Description: MUX 1-ELEMENT 8-IN 16-PIN SOICPackaging: Bulk |
auf Bestellung 56363 Stücke: Lieferzeit 10-14 Tag (e) |
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1N4447TR | onsemi |
Description: DIODE STANDARD 100V DO35Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDMS9408-F085 | onsemi |
Description: MOSFET N-CH 40V 80A POWER56Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V Power Dissipation (Max): 214W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power56 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDMS9408L-F085 | onsemi |
Description: MOSFET N-CH 40V 80A POWER56Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V Power Dissipation (Max): 214W (Tj) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power56 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 20 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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FDS4070N3 | onsemi |
Description: MOSFET N-CH 40V 15.3A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15.3A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: 8-SO FLMP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V |
Produkt ist nicht verfügbar |
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FDS4070N3 | onsemi |
Description: MOSFET N-CH 40V 15.3A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15.3A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: 8-SO FLMP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V |
Produkt ist nicht verfügbar |
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FDS4070N7 | onsemi |
Description: MOSFET N-CH 40V 15.3A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 15.3A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: 8-SO FLMP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V |
Produkt ist nicht verfügbar |
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FDS4070N7 | onsemi |
Description: MOSFET N-CH 40V 15.3A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta) Rds On (Max) @ Id, Vgs: 7mOhm @ 15.3A, 10V Power Dissipation (Max): 3W (Ta) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: 8-SO FLMP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V |
Produkt ist nicht verfügbar |
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KSC1507YTU | onsemi |
Description: TRANS NPN 300V 200UA TO-220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 100µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 10V Frequency - Transition: 80MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 200 µA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 15 W |
Produkt ist nicht verfügbar |
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NLA9306USG | onsemi |
Description: IC XLTR VL BIDIR US8Packaging: Tape & Reel (TR) Features: Auto-Direction Sensing Package / Case: 8-VFSOP (0.091", 2.30mm Width) Output Type: Open Drain Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) Supplier Device Package: US8 Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Number of Circuits: 1 |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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NLA9306USG | onsemi |
Description: IC XLTR VL BIDIR US8Packaging: Cut Tape (CT) Features: Auto-Direction Sensing Package / Case: 8-VFSOP (0.091", 2.30mm Width) Output Type: Open Drain Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) Supplier Device Package: US8 Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1 V ~ 3.6 V Voltage - VCCB: 1.8 V ~ 5.5 V Number of Circuits: 1 |
auf Bestellung 9551 Stücke: Lieferzeit 10-14 Tag (e) |
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74ABT245CSJX | onsemi |
Description: IC TXRX NON-INVERT 5.5V 20SOPPackaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.209", 5.30mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 8 Current - Output High, Low: 32mA, 64mA Supplier Device Package: 20-SOP |
Produkt ist nicht verfügbar |
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BDX34C | onsemi |
Description: TRANS PNP DARL 100V 10A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 3A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V Supplier Device Package: TO-220 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 70 W |
Produkt ist nicht verfügbar |
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NCV57085DR2G | onsemi |
Description: DGTL ISO 2.5KV 1CH GT DVR 8SOICPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 7.5A, 7A Technology: Capacitive Coupling Current - Output High, Low: 7.5A, 7A, 7.5A, 7A Voltage - Isolation: 2500Vrms Approval Agency: UL, VDE Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 10ns, 15ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 90ns, 90ns Pulse Width Distortion (Max): 30ns Grade: Automotive Number of Channels: 1 Voltage - Output Supply: 0V ~ 30V Qualification: AEC-Q100 |
auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV57085DR2G | onsemi |
Description: DGTL ISO 2.5KV 1CH GT DVR 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Current - Peak Output: 7.5A, 7A Technology: Capacitive Coupling Current - Output High, Low: 7.5A, 7A, 7.5A, 7A Voltage - Isolation: 2500Vrms Approval Agency: UL, VDE Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 10ns, 15ns Common Mode Transient Immunity (Min): 100kV/µs Propagation Delay tpLH / tpHL (Max): 90ns, 90ns Pulse Width Distortion (Max): 30ns Grade: Automotive Number of Channels: 1 Voltage - Output Supply: 0V ~ 30V Qualification: AEC-Q100 |
auf Bestellung 13990 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVMUN5216T1G | onsemi |
Description: NPN BIPOLAR DIGITAL TRANSISTOR (Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 4.7 kOhms Qualification: AEC-Q101 |
auf Bestellung 93000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVMUN5216T1G | onsemi |
Description: NPN BIPOLAR DIGITAL TRANSISTOR (Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SC-70-3 (SOT323) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 202 mW Resistor - Base (R1): 4.7 kOhms Qualification: AEC-Q101 |
auf Bestellung 93000 Stücke: Lieferzeit 10-14 Tag (e) |
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AR0234CSSC00SUKA0-CP1 | onsemi |
Description: 2MP 1/3 CIS SOPackaging: Bulk Package / Case: 83-VFBGA, CSPBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Supplier Device Package: 83-ODCSP (5.6x10) Frames per Second: 120.0 |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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AR0234CSSM00SUKA0-CP2 | onsemi |
Description: 2MP 1/3 CIS SO Packaging: Tray Package / Case: 83-VFBGA, CSPBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Supplier Device Package: 83-ODCSP (5.6x10) Frames per Second: 120.0 |
Produkt ist nicht verfügbar |
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AR0234CSSM28SUKA0-CP2 | onsemi |
Description: 2MP 1/3 CIS SO Packaging: Tube Package / Case: 83-VFBGA, CSPBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Supplier Device Package: 83-ODCSP (5.6x10) Frames per Second: 120.0 |
Produkt ist nicht verfügbar |
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AR0234CSSC28SUKA0-CP2 | onsemi |
Description: 2MP 1/3 CIS SO Packaging: Tray Package / Case: 83-VFBGA, CSPBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Supplier Device Package: 83-ODCSP (5.6x10) Frames per Second: 120.0 |
Produkt ist nicht verfügbar |
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AR0234CSSC00SUKA0-CP2 | onsemi |
Description: 2MP 1/3 CIS SO Packaging: Tray Package / Case: 83-VFBGA, CSPBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Supplier Device Package: 83-ODCSP (5.6x10) Frames per Second: 120.0 |
Produkt ist nicht verfügbar |
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| AR0234CSSM00SUD20 | onsemi |
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I Packaging: Bulk Package / Case: Die Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Supplier Device Package: Die Frames per Second: 120.0 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| AR0234CSSC28SUD20 | onsemi |
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I Packaging: Bulk Package / Case: Die Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Supplier Device Package: Die Frames per Second: 120.0 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| AR0234CSSM28SUD20 | onsemi |
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I Packaging: Bulk Package / Case: Die Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Supplier Device Package: Die Frames per Second: 120.0 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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AR0234CSSC00SUD20 | onsemi |
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I Packaging: Bulk Package / Case: 83-VFBGA, CSPBGA Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Supplier Device Package: 83-ODCSP (5.6x10) Frames per Second: 120.0 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| AR0234AT3M28XUEA0-DRBR-E | onsemi |
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I Packaging: Bulk Type: CMOS Pixel Size: 3µm x 3µm Active Pixel Array: 1920H x 1200V Grade: Automotive Frames per Second: 120.0 Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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FFSH2065BDN | onsemi |
Description: DIODE ARRAY SIC 650V 10A TO247-3Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
auf Bestellung 9577 Stücke: Lieferzeit 10-14 Tag (e) |
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FFSH2065B-F155 | onsemi |
Description: DIODE SIL CARB 650V 22.3A TO2472Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 866pF @ 1V, 100kHz Current - Average Rectified (Io): 22.3A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
auf Bestellung 3960 Stücke: Lieferzeit 10-14 Tag (e) |
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RFP15N05L | onsemi |
Description: MOSFET N-CH 50V 15A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 15A, 5V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 50 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V |
Produkt ist nicht verfügbar |
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NL7SZ19DFT2G-Q | onsemi |
Description: 1:2 DIGITAL MULTIPLEXER / DEMULTPackaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Circuit: 1 x 1:2 Type: Decoder/Demultiplexer Operating Temperature: -55°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 32mA, 32mA Voltage Supply Source: Single Supply Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 186000 Stücke: Lieferzeit 10-14 Tag (e) |
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NL7SZ19DFT2G-Q | onsemi |
Description: 1:2 DIGITAL MULTIPLEXER / DEMULTPackaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Circuit: 1 x 1:2 Type: Decoder/Demultiplexer Operating Temperature: -55°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 32mA, 32mA Voltage Supply Source: Single Supply Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 188900 Stücke: Lieferzeit 10-14 Tag (e) |
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NL7SZ19DFT2 | onsemi |
Description: IC DECODER/DEMUX 1 X 1:2 SC88Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Circuit: 1 x 1:2 Type: Decoder/Demultiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 32mA, 32mA Voltage Supply Source: Single Supply Supplier Device Package: SC-88/SC70-6/SOT-363 |
Produkt ist nicht verfügbar |
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NC7SZ19L6X | onsemi |
Description: IC DECODER/DEMUX 1X1:2 6MICROPKPackaging: Tape & Reel (TR) Package / Case: 6-UFDFN Mounting Type: Surface Mount Circuit: 1 x 1:2 Type: Decoder/Demultiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 32mA, 32mA Voltage Supply Source: Single Supply Supplier Device Package: 6-MicroPak |
Produkt ist nicht verfügbar |
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NC7SZ19L6X | onsemi |
Description: IC DECODER/DEMUX 1X1:2 6MICROPKPackaging: Cut Tape (CT) Package / Case: 6-UFDFN Mounting Type: Surface Mount Circuit: 1 x 1:2 Type: Decoder/Demultiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 32mA, 32mA Voltage Supply Source: Single Supply Supplier Device Package: 6-MicroPak |
Produkt ist nicht verfügbar |
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BZX85C20 | onsemi |
Description: DIODE ZENER 20V 1W DO41Packaging: Bulk Tolerance: ±6% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 20 V Impedance (Max) (Zzt): 24 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 14 V |
Produkt ist nicht verfügbar |
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74LCX126MTC | onsemi |
Description: IC BUF NON-INVERT 3.6V 14TSSOPPackaging: Bulk Package / Case: 14-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 4 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 14-TSSOP |
auf Bestellung 49350 Stücke: Lieferzeit 10-14 Tag (e) |
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74LCX126MX | onsemi |
Description: IC BUF NON-INVERT 3.6V 14SOICPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 4 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 14-SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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74LCX126MX | onsemi |
Description: IC BUF NON-INVERT 3.6V 14SOICPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 4 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 14-SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDC640P-NBAD004A | onsemi |
Description: P-CHANNEL POWERTRENCH MOSFET, 2.Packaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 53mOhm @ 4.5A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V |
Produkt ist nicht verfügbar |
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USB1T20MTC | onsemi |
Description: IC TRANSCEIVER HALF 1/1 14TSSOPPackaging: Tube Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Number of Drivers/Receivers: 1/1 Data Rate: 12Mbps Protocol: USB 2.0 Supplier Device Package: 14-TSSOP Duplex: Half |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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USB1T20MTCX | onsemi |
Description: IC TRANSCEIVER HALF 1/1 14TSSOPPackaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Number of Drivers/Receivers: 1/1 Data Rate: 12Mbps Protocol: USB 2.0 Supplier Device Package: 14-TSSOP Duplex: Half |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
BDW94C | onsemi |
Description: TRANS PNP DARL 100V 12A TO-220-3Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 5A, 3V Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 80 W |
auf Bestellung 5253 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS1D1N04XMT1G | onsemi |
Description: 40V T10M IN S08FL PACKAGEPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 233A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 30A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 120µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 49.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3138 pF @ 25 V |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS1D1N04XMT1G | onsemi |
Description: 40V T10M IN S08FL PACKAGEPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 233A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 30A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 120µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 49.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3138 pF @ 25 V |
auf Bestellung 1778 Stücke: Lieferzeit 10-14 Tag (e) |
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| UJ3N120070K3S |
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Hersteller: onsemi
Description: JFET N-CH 1200V 33.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 100V
Voltage - Breakdown (V(BR)GSS): 1200 V
Current Drain (Id) - Max: 33.5 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 1200 V
Power - Max: 254 W
Resistance - RDS(On): 90 mOhms
Description: JFET N-CH 1200V 33.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 100V
Voltage - Breakdown (V(BR)GSS): 1200 V
Current Drain (Id) - Max: 33.5 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 1200 V
Power - Max: 254 W
Resistance - RDS(On): 90 mOhms
auf Bestellung 1679 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 28.53 EUR |
| 30+ | 17.66 EUR |
| 120+ | 15.37 EUR |
| UJ4C075023K4S |
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Hersteller: onsemi
Description: 750V/23MOHM, SIC, CASCODE, G4, T
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Description: 750V/23MOHM, SIC, CASCODE, G4, T
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
auf Bestellung 1133 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 22.84 EUR |
| 30+ | 17.6 EUR |
| 120+ | 16.52 EUR |
| UJ3N120065K3S |
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Hersteller: onsemi
Description: JFET N-CH 1.2KV 34A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1008pF @ 100V
Voltage - Breakdown (V(BR)GSS): 1200 V
Current Drain (Id) - Max: 34 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 1200 V
Power - Max: 254 W
Resistance - RDS(On): 55 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 5 µA @ 1200 V
Description: JFET N-CH 1.2KV 34A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1008pF @ 100V
Voltage - Breakdown (V(BR)GSS): 1200 V
Current Drain (Id) - Max: 34 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 1200 V
Power - Max: 254 W
Resistance - RDS(On): 55 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 5 µA @ 1200 V
auf Bestellung 1996 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 34.25 EUR |
| 30+ | 25.92 EUR |
| 120+ | 23.97 EUR |
| UJ4C075018K3S |
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Hersteller: onsemi
Description: SICFET N-CH 750V 81A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 12V
Power Dissipation (Max): 385W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1422 pF @ 100 V
Description: SICFET N-CH 750V 81A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 12V
Power Dissipation (Max): 385W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1422 pF @ 100 V
auf Bestellung 5111 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 32.23 EUR |
| 30+ | 22.34 EUR |
| UJ4SC075011K4S |
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Hersteller: onsemi
Description: 750V/11MOHM, SIC, STACKED CASCOD
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V
Description: 750V/11MOHM, SIC, STACKED CASCOD
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V
auf Bestellung 917 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 46.94 EUR |
| 30+ | 31.36 EUR |
| 120+ | 31.31 EUR |
| UJ4SC075009K4S |
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Hersteller: onsemi
Description: 750V/9MOHM, SIC, STACKED CASCODE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 70A, 12V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 400 V
Description: 750V/9MOHM, SIC, STACKED CASCODE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 70A, 12V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 400 V
auf Bestellung 422 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 62.13 EUR |
| 30+ | 41.59 EUR |
| UJ3N120035K3S |
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Hersteller: onsemi
Description: JFET N-CH 1200V 63A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2145pF @ 100V
Voltage - Breakdown (V(BR)GSS): 1200 V
Current Drain (Id) - Max: 63 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 1200 V
Power - Max: 429 W
Resistance - RDS(On): 45 mOhms
Description: JFET N-CH 1200V 63A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2145pF @ 100V
Voltage - Breakdown (V(BR)GSS): 1200 V
Current Drain (Id) - Max: 63 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 1200 V
Power - Max: 429 W
Resistance - RDS(On): 45 mOhms
auf Bestellung 3963 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 55.62 EUR |
| 30+ | 36.65 EUR |
| 120+ | 36.22 EUR |
| UJ4SC075006K4S |
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Hersteller: onsemi
Description: 750V/6MOHM, SIC, STACKED CASCODE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 12V
Power Dissipation (Max): 714W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V
Description: 750V/6MOHM, SIC, STACKED CASCODE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 12V
Power Dissipation (Max): 714W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V
auf Bestellung 606 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 77.23 EUR |
| 30+ | 55.54 EUR |
| UF3SC120009K4S |
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Hersteller: onsemi
Description: SICFET N-CH 1200V 120A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 12V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8512 pF @ 100 V
Description: SICFET N-CH 1200V 120A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 12V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8512 pF @ 100 V
auf Bestellung 619 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 99.69 EUR |
| 30+ | 75.24 EUR |
| UF3SC065007K4S |
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Hersteller: onsemi
Description: MOSFET N-CH 650V 120A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 12V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 100 V
Description: MOSFET N-CH 650V 120A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 12V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 100 V
auf Bestellung 987 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 111.2 EUR |
| 30+ | 87.82 EUR |
| FAN4174IP5X |
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Hersteller: onsemi
Description: IC OPAMP VFB 1 CIRCUIT SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Voltage Feedback
Operating Temperature: -40°C ~ 85°C
Current - Supply: 200µA
Slew Rate: 3V/µs
Gain Bandwidth Product: 3.7 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 8 mV
Supplier Device Package: SC-70-5
Number of Circuits: 1
Current - Output / Channel: 33 mA
-3db Bandwidth: 3.7 MHz
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.25 V
Description: IC OPAMP VFB 1 CIRCUIT SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Voltage Feedback
Operating Temperature: -40°C ~ 85°C
Current - Supply: 200µA
Slew Rate: 3V/µs
Gain Bandwidth Product: 3.7 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 8 mV
Supplier Device Package: SC-70-5
Number of Circuits: 1
Current - Output / Channel: 33 mA
-3db Bandwidth: 3.7 MHz
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.25 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NCP81102MNTXG |
Hersteller: onsemi
Description: IC REG BUCK CTLR 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 32-QFN (5x5)
Description: IC REG BUCK CTLR 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 32-QFN (5x5)
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NCP81102MNTXG |
Hersteller: onsemi
Description: IC REG BUCK CTLR 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 32-QFN (5x5)
Description: IC REG BUCK CTLR 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 32-QFN (5x5)
Produkt ist nicht verfügbar
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| NCP81102MNTWG |
Hersteller: onsemi
Description: IC REG BUCK CTLR 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 32-QFN (5x5)
Description: IC REG BUCK CTLR 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 32-QFN (5x5)
Produkt ist nicht verfügbar
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| MC74AC153DR2 |
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auf Bestellung 3439 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1680+ | 0.28 EUR |
| MC74ACT151DR2 |
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auf Bestellung 56363 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1402+ | 0.35 EUR |
| 1N4447TR |
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Hersteller: onsemi
Description: DIODE STANDARD 100V DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Description: DIODE STANDARD 100V DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
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| FDMS9408-F085 |
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Hersteller: onsemi
Description: MOSFET N-CH 40V 80A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power56
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 80A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power56
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V
Qualification: AEC-Q101
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| FDMS9408L-F085 |
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Hersteller: onsemi
Description: MOSFET N-CH 40V 80A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power56
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 80A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power56
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 20 V
Qualification: AEC-Q101
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| FDS4070N3 |
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Hersteller: onsemi
Description: MOSFET N-CH 40V 15.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15.3A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V
Description: MOSFET N-CH 40V 15.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15.3A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V
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| FDS4070N3 |
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Hersteller: onsemi
Description: MOSFET N-CH 40V 15.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15.3A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V
Description: MOSFET N-CH 40V 15.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15.3A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V
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| FDS4070N7 |
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Hersteller: onsemi
Description: MOSFET N-CH 40V 15.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15.3A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V
Description: MOSFET N-CH 40V 15.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15.3A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V
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| FDS4070N7 |
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Hersteller: onsemi
Description: MOSFET N-CH 40V 15.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15.3A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V
Description: MOSFET N-CH 40V 15.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15.3A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V
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| KSC1507YTU |
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Hersteller: onsemi
Description: TRANS NPN 300V 200UA TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 10V
Frequency - Transition: 80MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 200 µA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
Description: TRANS NPN 300V 200UA TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 10V
Frequency - Transition: 80MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 200 µA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
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| NLA9306USG |
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Hersteller: onsemi
Description: IC XLTR VL BIDIR US8
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: US8
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.6 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
Description: IC XLTR VL BIDIR US8
Packaging: Tape & Reel (TR)
Features: Auto-Direction Sensing
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: US8
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.6 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.19 EUR |
| 9000+ | 0.18 EUR |
| NLA9306USG |
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Hersteller: onsemi
Description: IC XLTR VL BIDIR US8
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: US8
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.6 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
Description: IC XLTR VL BIDIR US8
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: US8
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.6 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
auf Bestellung 9551 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 39+ | 0.46 EUR |
| 56+ | 0.32 EUR |
| 63+ | 0.28 EUR |
| 100+ | 0.24 EUR |
| 250+ | 0.22 EUR |
| 500+ | 0.21 EUR |
| 1000+ | 0.2 EUR |
| 74ABT245CSJX |
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Hersteller: onsemi
Description: IC TXRX NON-INVERT 5.5V 20SOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 20-SOP
Description: IC TXRX NON-INVERT 5.5V 20SOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 20-SOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BDX34C |
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Hersteller: onsemi
Description: TRANS PNP DARL 100V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 3A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 70 W
Description: TRANS PNP DARL 100V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 3A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 70 W
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NCV57085DR2G |
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Hersteller: onsemi
Description: DGTL ISO 2.5KV 1CH GT DVR 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 7.5A, 7A
Technology: Capacitive Coupling
Current - Output High, Low: 7.5A, 7A, 7.5A, 7A
Voltage - Isolation: 2500Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 30ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 0V ~ 30V
Qualification: AEC-Q100
Description: DGTL ISO 2.5KV 1CH GT DVR 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 7.5A, 7A
Technology: Capacitive Coupling
Current - Output High, Low: 7.5A, 7A, 7.5A, 7A
Voltage - Isolation: 2500Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 30ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 0V ~ 30V
Qualification: AEC-Q100
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 1.28 EUR |
| 5000+ | 1.26 EUR |
| NCV57085DR2G |
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Hersteller: onsemi
Description: DGTL ISO 2.5KV 1CH GT DVR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 7.5A, 7A
Technology: Capacitive Coupling
Current - Output High, Low: 7.5A, 7A, 7.5A, 7A
Voltage - Isolation: 2500Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 30ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 0V ~ 30V
Qualification: AEC-Q100
Description: DGTL ISO 2.5KV 1CH GT DVR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 7.5A, 7A
Technology: Capacitive Coupling
Current - Output High, Low: 7.5A, 7A, 7.5A, 7A
Voltage - Isolation: 2500Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 30ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 0V ~ 30V
Qualification: AEC-Q100
auf Bestellung 13990 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.54 EUR |
| 10+ | 2.87 EUR |
| 25+ | 2.43 EUR |
| 100+ | 1.93 EUR |
| 250+ | 1.69 EUR |
| 500+ | 1.54 EUR |
| 1000+ | 1.42 EUR |
| NSVMUN5216T1G |
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Hersteller: onsemi
Description: NPN BIPOLAR DIGITAL TRANSISTOR (
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
Description: NPN BIPOLAR DIGITAL TRANSISTOR (
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 93000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.064 EUR |
| 6000+ | 0.057 EUR |
| 9000+ | 0.054 EUR |
| 15000+ | 0.05 EUR |
| 21000+ | 0.048 EUR |
| 30000+ | 0.045 EUR |
| 75000+ | 0.04 EUR |
| NSVMUN5216T1G |
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Hersteller: onsemi
Description: NPN BIPOLAR DIGITAL TRANSISTOR (
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
Description: NPN BIPOLAR DIGITAL TRANSISTOR (
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 93000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 56+ | 0.32 EUR |
| AR0234CSSC00SUKA0-CP1 |
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Hersteller: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Bulk
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Description: 2MP 1/3 CIS SO
Packaging: Bulk
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 78.6 EUR |
| AR0234CSSM00SUKA0-CP2 |
Hersteller: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AR0234CSSM28SUKA0-CP2 |
Hersteller: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tube
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Description: 2MP 1/3 CIS SO
Packaging: Tube
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AR0234CSSC28SUKA0-CP2 |
Hersteller: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AR0234CSSC00SUKA0-CP2 |
Hersteller: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AR0234CSSM00SUD20 |
Hersteller: onsemi
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Package / Case: Die
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: Die
Frames per Second: 120.0
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Package / Case: Die
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: Die
Frames per Second: 120.0
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AR0234CSSC28SUD20 |
Hersteller: onsemi
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Package / Case: Die
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: Die
Frames per Second: 120.0
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Package / Case: Die
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: Die
Frames per Second: 120.0
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AR0234CSSM28SUD20 |
Hersteller: onsemi
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Package / Case: Die
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: Die
Frames per Second: 120.0
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Package / Case: Die
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: Die
Frames per Second: 120.0
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AR0234CSSC00SUD20 |
Hersteller: onsemi
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AR0234AT3M28XUEA0-DRBR-E |
Hersteller: onsemi
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Grade: Automotive
Frames per Second: 120.0
Qualification: AEC-Q100
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Grade: Automotive
Frames per Second: 120.0
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FFSH2065BDN |
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Hersteller: onsemi
Description: DIODE ARRAY SIC 650V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE ARRAY SIC 650V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 9577 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.65 EUR |
| 10+ | 5.14 EUR |
| 450+ | 3.68 EUR |
| 900+ | 3.13 EUR |
| 1350+ | 2.95 EUR |
| FFSH2065B-F155 |
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Hersteller: onsemi
Description: DIODE SIL CARB 650V 22.3A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 866pF @ 1V, 100kHz
Current - Average Rectified (Io): 22.3A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE SIL CARB 650V 22.3A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 866pF @ 1V, 100kHz
Current - Average Rectified (Io): 22.3A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 3960 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.65 EUR |
| 30+ | 4.52 EUR |
| 120+ | 4.03 EUR |
| 510+ | 3.49 EUR |
| 1020+ | 2.99 EUR |
| RFP15N05L |
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Hersteller: onsemi
Description: MOSFET N-CH 50V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 15A, 5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Description: MOSFET N-CH 50V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 15A, 5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NL7SZ19DFT2G-Q |
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Hersteller: onsemi
Description: 1:2 DIGITAL MULTIPLEXER / DEMULT
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 1:2
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Voltage Supply Source: Single Supply
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q100
Description: 1:2 DIGITAL MULTIPLEXER / DEMULT
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 1:2
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Voltage Supply Source: Single Supply
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 186000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.081 EUR |
| 6000+ | 0.072 EUR |
| 9000+ | 0.067 EUR |
| 15000+ | 0.062 EUR |
| 21000+ | 0.059 EUR |
| 30000+ | 0.056 EUR |
| 75000+ | 0.05 EUR |
| 150000+ | 0.046 EUR |
| NL7SZ19DFT2G-Q |
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Hersteller: onsemi
Description: 1:2 DIGITAL MULTIPLEXER / DEMULT
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 1:2
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Voltage Supply Source: Single Supply
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q100
Description: 1:2 DIGITAL MULTIPLEXER / DEMULT
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 1:2
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Voltage Supply Source: Single Supply
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 188900 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 39+ | 0.46 EUR |
| 68+ | 0.26 EUR |
| 83+ | 0.21 EUR |
| 113+ | 0.16 EUR |
| 250+ | 0.13 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.099 EUR |
| NL7SZ19DFT2 |
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Hersteller: onsemi
Description: IC DECODER/DEMUX 1 X 1:2 SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 1:2
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Voltage Supply Source: Single Supply
Supplier Device Package: SC-88/SC70-6/SOT-363
Description: IC DECODER/DEMUX 1 X 1:2 SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 1:2
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Voltage Supply Source: Single Supply
Supplier Device Package: SC-88/SC70-6/SOT-363
Produkt ist nicht verfügbar
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| NC7SZ19L6X |
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Hersteller: onsemi
Description: IC DECODER/DEMUX 1X1:2 6MICROPK
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Circuit: 1 x 1:2
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Voltage Supply Source: Single Supply
Supplier Device Package: 6-MicroPak
Description: IC DECODER/DEMUX 1X1:2 6MICROPK
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Circuit: 1 x 1:2
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Voltage Supply Source: Single Supply
Supplier Device Package: 6-MicroPak
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NC7SZ19L6X |
![]() |
Hersteller: onsemi
Description: IC DECODER/DEMUX 1X1:2 6MICROPK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Circuit: 1 x 1:2
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Voltage Supply Source: Single Supply
Supplier Device Package: 6-MicroPak
Description: IC DECODER/DEMUX 1X1:2 6MICROPK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Circuit: 1 x 1:2
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Voltage Supply Source: Single Supply
Supplier Device Package: 6-MicroPak
Produkt ist nicht verfügbar
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| BZX85C20 |
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Hersteller: onsemi
Description: DIODE ZENER 20V 1W DO41
Packaging: Bulk
Tolerance: ±6%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 14 V
Description: DIODE ZENER 20V 1W DO41
Packaging: Bulk
Tolerance: ±6%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 14 V
Produkt ist nicht verfügbar
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| 74LCX126MTC |
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Hersteller: onsemi
Description: IC BUF NON-INVERT 3.6V 14TSSOP
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-TSSOP
Description: IC BUF NON-INVERT 3.6V 14TSSOP
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-TSSOP
auf Bestellung 49350 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1276+ | 0.4 EUR |
| 74LCX126MX |
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Hersteller: onsemi
Description: IC BUF NON-INVERT 3.6V 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-SOIC
Description: IC BUF NON-INVERT 3.6V 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74LCX126MX |
![]() |
Hersteller: onsemi
Description: IC BUF NON-INVERT 3.6V 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-SOIC
Description: IC BUF NON-INVERT 3.6V 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 14-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDC640P-NBAD004A |
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Hersteller: onsemi
Description: P-CHANNEL POWERTRENCH MOSFET, 2.
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
Description: P-CHANNEL POWERTRENCH MOSFET, 2.
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
Produkt ist nicht verfügbar
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| USB1T20MTC |
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Hersteller: onsemi
Description: IC TRANSCEIVER HALF 1/1 14TSSOP
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 1/1
Data Rate: 12Mbps
Protocol: USB 2.0
Supplier Device Package: 14-TSSOP
Duplex: Half
Description: IC TRANSCEIVER HALF 1/1 14TSSOP
Packaging: Tube
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 1/1
Data Rate: 12Mbps
Protocol: USB 2.0
Supplier Device Package: 14-TSSOP
Duplex: Half
Produkt ist nicht verfügbar
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| USB1T20MTCX |
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Hersteller: onsemi
Description: IC TRANSCEIVER HALF 1/1 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 1/1
Data Rate: 12Mbps
Protocol: USB 2.0
Supplier Device Package: 14-TSSOP
Duplex: Half
Description: IC TRANSCEIVER HALF 1/1 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 1/1
Data Rate: 12Mbps
Protocol: USB 2.0
Supplier Device Package: 14-TSSOP
Duplex: Half
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BDW94C |
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Hersteller: onsemi
Description: TRANS PNP DARL 100V 12A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 5A, 3V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 80 W
Description: TRANS PNP DARL 100V 12A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 100mA, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 5A, 3V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 80 W
auf Bestellung 5253 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.43 EUR |
| 12+ | 1.55 EUR |
| 200+ | 0.93 EUR |
| 600+ | 0.79 EUR |
| 1000+ | 0.74 EUR |
| 2000+ | 0.68 EUR |
| 5000+ | 0.62 EUR |
| NTMFS1D1N04XMT1G |
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Hersteller: onsemi
Description: 40V T10M IN S08FL PACKAGE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 233A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 30A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3138 pF @ 25 V
Description: 40V T10M IN S08FL PACKAGE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 233A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 30A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3138 pF @ 25 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1500+ | 1.63 EUR |
| NTMFS1D1N04XMT1G |
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Hersteller: onsemi
Description: 40V T10M IN S08FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 233A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 30A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3138 pF @ 25 V
Description: 40V T10M IN S08FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 233A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 30A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3138 pF @ 25 V
auf Bestellung 1778 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.05 EUR |
| 10+ | 3.28 EUR |
| 100+ | 2.27 EUR |
| 500+ | 1.84 EUR |





























