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FCH76N60N FCH76N60N onsemi fch76n60n-d.pdf Description: MOSFET N-CH 600V 76A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 38A, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12385 pF @ 100 V
Produkt ist nicht verfügbar
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FCH76N60NF FCH76N60NF onsemi fch76n60nf-d.pdf Description: MOSFET N-CH 600V 72.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72.8A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 38A, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11045 pF @ 100 V
Produkt ist nicht verfügbar
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SZMMBZ5240ELT1G SZMMBZ5240ELT1G onsemi mmbz5221elt1-d.pdf Description: DIODE ZENER 10V 225MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
Qualification: AEC-Q101
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9000+0.12 EUR
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SZMMBZ5240ELT1G SZMMBZ5240ELT1G onsemi mmbz5221elt1-d.pdf Description: DIODE ZENER 10V 225MW SOT23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
Qualification: AEC-Q101
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500+0.2 EUR
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MMBZ5240ELT1G MMBZ5240ELT1G onsemi mmbz5221elt1-d.pdf Description: DIODE ZENER 10V 225MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
Produkt ist nicht verfügbar
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RFP70N03 RFP70N03 onsemi RFP70N03%2C%20RF1S70N03%28SM%29.pdf Description: MOSFET N-CH 30V 70A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Produkt ist nicht verfügbar
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FDT459N FDT459N onsemi fdt459n-d.pdf Description: MOSFET N-CH 30V 6.5A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.5A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 15 V
Produkt ist nicht verfügbar
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FDT459N FDT459N onsemi fdt459n-d.pdf Description: MOSFET N-CH 30V 6.5A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.5A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 15 V
Produkt ist nicht verfügbar
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SN74LS05N SN74LS05N onsemi sn74ls05.pdf?ts=1633830785847&ref_url=https%253A%252F%252Fgoogle.com Description: IC INVERTER 6CH 1-INP 14DIP
Features: Open Collector
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: Inverter
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Output High, Low: -, 8mA
Number of Inputs: 1
Supplier Device Package: 14-PDIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 32ns @ 5V, 15pF
Number of Circuits: 6
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LM431SBCMLX LM431SBCMLX onsemi lm431sa-d.pdf Description: IC VREF SHUNT ADJ 1% SOT89-3
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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LM431SBCMLX LM431SBCMLX onsemi lm431sa-d.pdf Description: IC VREF SHUNT ADJ 1% SOT89-3
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Produkt ist nicht verfügbar
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FDN327N FDN327N onsemi fdn327n-d.pdf Description: MOSFET N-CH 20V 2A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 423 pF @ 10 V
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FDN327N FDN327N onsemi fdn327n-d.pdf Description: MOSFET N-CH 20V 2A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 423 pF @ 10 V
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CAT24C512HU5EGT3 CAT24C512HU5EGT3 onsemi cat24c512-d.pdf Description: 512-KB I2C SERIAL EEPROM
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (3x2)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
Produkt ist nicht verfügbar
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CAT24C512HU5EGT3 CAT24C512HU5EGT3 onsemi cat24c512-d.pdf Description: 512-KB I2C SERIAL EEPROM
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (3x2)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
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50+1.04 EUR
100+1.02 EUR
250+0.99 EUR
500+0.96 EUR
1000+0.94 EUR
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TIP42C TIP42C onsemi TO220B03_Pkg_Dwg.pdf Description: TRANS PNP 100V 6A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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NSVFSB560ALT1G NSVFSB560ALT1G onsemi nsvfsb560al-d.pdf Description: FSB560A-SN00165
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
Frequency - Transition: 75MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NSVFSB560ALT1G NSVFSB560ALT1G onsemi nsvfsb560al-d.pdf Description: FSB560A-SN00165
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
Frequency - Transition: 75MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: AEC-Q101
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20+0.92 EUR
100+0.6 EUR
500+0.46 EUR
1000+0.41 EUR
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NCV7710DQBR2G NCV7710DQBR2G onsemi ncv7710-d.pdf Description: IC MOTOR DRIVER 36SSOP
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 10A
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 5.5V ~ 28V
Technology: NMOS
Supplier Device Package: 36-SSOP-EP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NCV7710DQBR2G NCV7710DQBR2G onsemi ncv7710-d.pdf Description: IC MOTOR DRIVER 36SSOP
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 10A
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 5.5V ~ 28V
Technology: NMOS
Supplier Device Package: 36-SSOP-EP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
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2+13.94 EUR
10+9.36 EUR
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100+6.81 EUR
250+6.14 EUR
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NRTST40H100CTG NRTST40H100CTG onsemi nrtst40h100ct-d.pdf Description: DIODE ARR SCHOTT 100V 20A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
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MC10H334FNR2 MC10H334FNR2 onsemi MC10H334-D.pdf Description: IC DRIVER/RCVR QUAD BUS 20PLCC
Packaging: Bulk
Package / Case: 20-LCC (J-Lead)
Mounting Type: Surface Mount
Number of Bits: 4
Logic Type: Driver/Receiver
Operating Temperature: 0°C ~ 75°C
Supplier Device Package: 20-PLCC (9x9)
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MC10H334FN MC10H334FN onsemi MC10H334-D.pdf Description: IC DRIVER/RCVR QUAD BUS 20PLCC
Packaging: Tube
Package / Case: 20-LCC (J-Lead)
Mounting Type: Surface Mount
Number of Bits: 4
Logic Type: Driver/Receiver
Operating Temperature: 0°C ~ 75°C
Supplier Device Package: 20-PLCC (9x9)
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MC10H330FN MC10H330FN onsemi MC10H330-D.pdf Description: IC DRIVER/RCVR QUAD BUS 28-PLCC
Packaging: Tube
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Number of Bits: 4
Logic Type: Driver/Receiver
Operating Temperature: 0°C ~ 75°C
Supplier Device Package: 28-PLCC (11.51x11.51)
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MC10H334L MC10H334L onsemi MOTOD171-2-88.pdf?t.download=true&u=5oefqw Description: IC QUAD TRANSMITTER/RECEIVER
Packaging: Bulk
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33+15.8 EUR
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MC10H332FN MC10H332FN onsemi MC10H332-D.pdf Description: IC DRIVER/RCVR DUAL BUS 20PLCC
Packaging: Tube
Package / Case: 20-LCC (J-Lead)
Mounting Type: Surface Mount
Number of Bits: 2
Logic Type: Driver/Receiver
Operating Temperature: 0°C ~ 75°C
Supplier Device Package: 20-PLCC (9x9)
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MC10H332FNR2 MC10H332FNR2 onsemi MC10H332-D.pdf Description: IC DRIVER/RCVR DUAL BUS 20PLCC
Packaging: Bulk
Package / Case: 20-LCC (J-Lead)
Mounting Type: Surface Mount
Number of Bits: 2
Logic Type: Driver/Receiver
Operating Temperature: 0°C ~ 75°C
Supplier Device Package: 20-PLCC (9x9)
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MC10H334FNG MC10H334FNG onsemi MC10H334-D.pdf Description: IC DRIVER/RCVR QUAD BUS 20PLCC
Packaging: Tube
Package / Case: 20-LCC (J-Lead)
Mounting Type: Surface Mount
Number of Bits: 4
Logic Type: Driver/Receiver
Operating Temperature: 0°C ~ 75°C
Supplier Device Package: 20-PLCC (9x9)
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MC10H330PG MC10H330PG onsemi MC10H330-D.pdf Description: IC DRIVER/RCVR QUAD BUS 24-DIP
Packaging: Tube
Package / Case: 24-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Bits: 4
Logic Type: Driver/Receiver
Operating Temperature: 0°C ~ 75°C
Supplier Device Package: 24-PDIP
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MC10H330FNG MC10H330FNG onsemi MC10H330-D.pdf Description: IC DRIVER/RCVR QUAD BUS 28-PLCC
Packaging: Tube
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Number of Bits: 4
Logic Type: Driver/Receiver
Operating Temperature: 0°C ~ 75°C
Supplier Device Package: 28-PLCC (11.51x11.51)
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MC10H332FNG MC10H332FNG onsemi ONSMS10562-1.pdf?t.download=true&u=5oefqw Description: BUS TRANSCEIVER, 10H SERIES, 2-F
Packaging: Bulk
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74ACTQ273PC 74ACTQ273PC onsemi 74ACTQ273.pdf Description: IC FF D-TYPE SNGL 8BIT 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: Non-Inverted
Mounting Type: Through Hole
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 40 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 189 MHz
Input Capacitance: 4.5 pF
Supplier Device Package: 20-PDIP
Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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MC74AC00DR2G-Q MC74AC00DR2G-Q onsemi Description: LOG CMOS GATE
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
Produkt ist nicht verfügbar
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MC74AC00DR2G-Q MC74AC00DR2G-Q onsemi Description: LOG CMOS GATE
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
Produkt ist nicht verfügbar
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FQP8N60C FQP8N60C onsemi fqp8n60c-d.pdf Description: MOSFET N-CH 600V 7.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V
Produkt ist nicht verfügbar
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MC74HC164ADR2G-Q MC74HC164ADR2G-Q onsemi mc74hc164a-d.pdf Description: 8-BIT SERIAL-INPUT/PARALLEL-OUTP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 14-SOIC
Number of Bits per Element: 8
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MC74HC164ADR2G-Q MC74HC164ADR2G-Q onsemi mc74hc164a-d.pdf Description: 8-BIT SERIAL-INPUT/PARALLEL-OUTP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 14-SOIC
Number of Bits per Element: 8
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MOC8204SR2M MOC8204SR2M onsemi moc8204m-d.pdf Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 400V
Turn On / Turn Off Time (Typ): 5µs, 5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
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MOC8204SR2M MOC8204SR2M onsemi moc8204m-d.pdf Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 400V
Turn On / Turn Off Time (Typ): 5µs, 5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
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1N4004G 1N4004G onsemi 1n4001-d.pdf Description: DIODE STANDARD 400V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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1.5KE16A 1.5KE16A onsemi 1N6267A_Series.pdf Description: TVS DIODE 13.6VWM 22.5VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 67A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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FFSB20120A FFSB20120A onsemi ffsb20120a-d.pdf Description: DIODE SIL CARB 1200V 32A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1220pF @ 1V, 100KHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
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FFSB20120A FFSB20120A onsemi ffsb20120a-d.pdf Description: DIODE SIL CARB 1200V 32A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1220pF @ 1V, 100KHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
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FFSH20120A-F085 FFSH20120A-F085 onsemi ffsh20120a-f085-d.pdf Description: DIODE SIL CARB 1.2KV 30A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1220pF @ 1V, 100KHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Qualification: AEC-Q101
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FFSB20120A-F085 FFSB20120A-F085 onsemi ffsb20120a-f085-d.pdf Description: DIODE SIL CARB 1200V 32A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1220pF @ 1V, 100KHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Qualification: AEC-Q101
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FFSB20120A-F085 FFSB20120A-F085 onsemi ffsb20120a-f085-d.pdf Description: DIODE SIL CARB 1200V 32A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1220pF @ 1V, 100KHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Qualification: AEC-Q101
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FFSH40120ADN-F085 FFSH40120ADN-F085 onsemi ffsh40120adn-f085-d.pdf Description: DIODE SIL CARB 1200V 25A TO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1220pF @ 1V, 100KHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Qualification: AEC-Q101
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FDS9431A-TF085 FDS9431A-TF085 onsemi FDS9431A_F085-D.PDF Description: P-CHANNEL 2.5V SPECIFIED MOSFET,
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ISL9V5036S3ST-F085C ISL9V5036S3ST-F085C onsemi ISL9V5036S3ST-D.PDF Description: IGBT 390V 46A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 2.1 µs
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 700ns/10.8µs
Gate Charge: 32 nC
Grade: Automotive
Current - Collector (Ic) (Max): 46 A
Voltage - Collector Emitter Breakdown (Max): 390 V
Power - Max: 250 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MTBV30P06VT4G MTBV30P06VT4G onsemi MTB30P06V-D.PDF Description: POWER MOSFET -60V -30A 80 MOHM S
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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H11AA1 H11AA1 onsemi H11AA_1%2C2%2C3%2C4.pdf Description: OPTOISO 5.3KV TRANS W/BASE 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: AC, DC
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Produkt ist nicht verfügbar
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H11AA1W H11AA1W onsemi H11AA_1%2C2%2C3%2C4.pdf Description: OPTOISO 5.3KV TRANS W/BASE 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: AC, DC
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Produkt ist nicht verfügbar
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BD233STU BD233STU onsemi FAIRS19014-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 45V 2A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 25 W
Produkt ist nicht verfügbar
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KSD363R KSD363R onsemi ksd363-d.pdf Description: TRANS NPN 120V 6A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 40 W
Produkt ist nicht verfügbar
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2N5415 onsemi TN5415A.pdf Description: TRANS PNP 200V 0.1A TO-39
Package / Case: TO-39
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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CAS34TS00VP2GT4A CAS34TS00VP2GT4A onsemi Description: TEMP SENSOR WITH NO MEMORY
Packaging: Tape & Reel (TR)
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4000+0.73 EUR
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CAS34TS00VP2GT4A CAS34TS00VP2GT4A onsemi Description: TEMP SENSOR WITH NO MEMORY
Packaging: Cut Tape (CT)
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25+1.04 EUR
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MC74HC4053DR2 MC74HC4053DR2 onsemi MOTOD158-3-615.pdf?t.download=true&u=5oefqw Description: ANALOG MUX TRIPLE 2:1
Packaging: Bulk
auf Bestellung 2500 Stücke:
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SBRD8320G-VF01 SBRD8320G-VF01 onsemi Description: DIODE SCHOTTKY 20V 3A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Qualification: AEC-Q101
auf Bestellung 5775 Stücke:
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SBRD8320G-VF01 SBRD8320G-VF01 onsemi Description: DIODE SCHOTTKY 20V 3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Qualification: AEC-Q101
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FCH76N60N fch76n60n-d.pdf
FCH76N60N
Hersteller: onsemi
Description: MOSFET N-CH 600V 76A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 38A, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12385 pF @ 100 V
Produkt ist nicht verfügbar
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FCH76N60NF fch76n60nf-d.pdf
FCH76N60NF
Hersteller: onsemi
Description: MOSFET N-CH 600V 72.8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72.8A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 38A, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11045 pF @ 100 V
Produkt ist nicht verfügbar
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SZMMBZ5240ELT1G mmbz5221elt1-d.pdf
SZMMBZ5240ELT1G
Hersteller: onsemi
Description: DIODE ZENER 10V 225MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
Qualification: AEC-Q101
auf Bestellung 69000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
9000+0.12 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SZMMBZ5240ELT1G mmbz5221elt1-d.pdf
SZMMBZ5240ELT1G
Hersteller: onsemi
Description: DIODE ZENER 10V 225MW SOT23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
Qualification: AEC-Q101
auf Bestellung 71995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
45+0.39 EUR
100+0.21 EUR
500+0.2 EUR
1000+0.18 EUR
Mindestbestellmenge: 29
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MMBZ5240ELT1G mmbz5221elt1-d.pdf
MMBZ5240ELT1G
Hersteller: onsemi
Description: DIODE ZENER 10V 225MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 8 V
Produkt ist nicht verfügbar
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RFP70N03 RFP70N03%2C%20RF1S70N03%28SM%29.pdf
RFP70N03
Hersteller: onsemi
Description: MOSFET N-CH 30V 70A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Produkt ist nicht verfügbar
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FDT459N fdt459n-d.pdf
FDT459N
Hersteller: onsemi
Description: MOSFET N-CH 30V 6.5A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.5A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 15 V
Produkt ist nicht verfügbar
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FDT459N fdt459n-d.pdf
FDT459N
Hersteller: onsemi
Description: MOSFET N-CH 30V 6.5A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.5A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 365 pF @ 15 V
Produkt ist nicht verfügbar
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SN74LS05N sn74ls05.pdf?ts=1633830785847&ref_url=https%253A%252F%252Fgoogle.com
SN74LS05N
Hersteller: onsemi
Description: IC INVERTER 6CH 1-INP 14DIP
Features: Open Collector
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: Inverter
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Output High, Low: -, 8mA
Number of Inputs: 1
Supplier Device Package: 14-PDIP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 32ns @ 5V, 15pF
Number of Circuits: 6
auf Bestellung 28628 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
479+0.97 EUR
Mindestbestellmenge: 479
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LM431SBCMLX lm431sa-d.pdf
LM431SBCMLX
Hersteller: onsemi
Description: IC VREF SHUNT ADJ 1% SOT89-3
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Produkt ist nicht verfügbar
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LM431SBCMLX lm431sa-d.pdf
LM431SBCMLX
Hersteller: onsemi
Description: IC VREF SHUNT ADJ 1% SOT89-3
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Produkt ist nicht verfügbar
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FDN327N fdn327n-d.pdf
FDN327N
Hersteller: onsemi
Description: MOSFET N-CH 20V 2A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 423 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
Mindestbestellmenge: 3000
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FDN327N fdn327n-d.pdf
FDN327N
Hersteller: onsemi
Description: MOSFET N-CH 20V 2A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 423 pF @ 10 V
auf Bestellung 3755 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
40+0.44 EUR
100+0.26 EUR
500+0.25 EUR
Mindestbestellmenge: 22
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CAT24C512HU5EGT3 cat24c512-d.pdf
CAT24C512HU5EGT3
Hersteller: onsemi
Description: 512-KB I2C SERIAL EEPROM
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (3x2)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
Produkt ist nicht verfügbar
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CAT24C512HU5EGT3 cat24c512-d.pdf
CAT24C512HU5EGT3
Hersteller: onsemi
Description: 512-KB I2C SERIAL EEPROM
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (3x2)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 64K x 8
auf Bestellung 2959 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
17+1.09 EUR
25+1.06 EUR
50+1.04 EUR
100+1.02 EUR
250+0.99 EUR
500+0.96 EUR
1000+0.94 EUR
Mindestbestellmenge: 16
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TIP42C TO220B03_Pkg_Dwg.pdf
TIP42C
Hersteller: onsemi
Description: TRANS PNP 100V 6A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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NSVFSB560ALT1G nsvfsb560al-d.pdf
NSVFSB560ALT1G
Hersteller: onsemi
Description: FSB560A-SN00165
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
Frequency - Transition: 75MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NSVFSB560ALT1G nsvfsb560al-d.pdf
NSVFSB560ALT1G
Hersteller: onsemi
Description: FSB560A-SN00165
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 500mA, 2V
Frequency - Transition: 75MHz
Supplier Device Package: SOT-23-3
Grade: Automotive
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: AEC-Q101
auf Bestellung 2900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.46 EUR
20+0.92 EUR
100+0.6 EUR
500+0.46 EUR
1000+0.41 EUR
Mindestbestellmenge: 13
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NCV7710DQBR2G ncv7710-d.pdf
NCV7710DQBR2G
Hersteller: onsemi
Description: IC MOTOR DRIVER 36SSOP
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 10A
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 5.5V ~ 28V
Technology: NMOS
Supplier Device Package: 36-SSOP-EP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NCV7710DQBR2G ncv7710-d.pdf
NCV7710DQBR2G
Hersteller: onsemi
Description: IC MOTOR DRIVER 36SSOP
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 10A
Interface: PWM, SPI
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 5.5V ~ 28V
Technology: NMOS
Supplier Device Package: 36-SSOP-EP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1499 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.94 EUR
10+9.36 EUR
25+8.16 EUR
100+6.81 EUR
250+6.14 EUR
500+5.98 EUR
Mindestbestellmenge: 2
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NRTST40H100CTG nrtst40h100ct-d.pdf
NRTST40H100CTG
Hersteller: onsemi
Description: DIODE ARR SCHOTT 100V 20A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 20 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
auf Bestellung 188 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.18 EUR
50+1.14 EUR
100+1.03 EUR
Mindestbestellmenge: 9
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MC10H334FNR2 MC10H334-D.pdf
MC10H334FNR2
Hersteller: onsemi
Description: IC DRIVER/RCVR QUAD BUS 20PLCC
Packaging: Bulk
Package / Case: 20-LCC (J-Lead)
Mounting Type: Surface Mount
Number of Bits: 4
Logic Type: Driver/Receiver
Operating Temperature: 0°C ~ 75°C
Supplier Device Package: 20-PLCC (9x9)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+11.68 EUR
Mindestbestellmenge: 44
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MC10H334FN MC10H334-D.pdf
MC10H334FN
Hersteller: onsemi
Description: IC DRIVER/RCVR QUAD BUS 20PLCC
Packaging: Tube
Package / Case: 20-LCC (J-Lead)
Mounting Type: Surface Mount
Number of Bits: 4
Logic Type: Driver/Receiver
Operating Temperature: 0°C ~ 75°C
Supplier Device Package: 20-PLCC (9x9)
auf Bestellung 276 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+11.68 EUR
Mindestbestellmenge: 44
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MC10H330FN MC10H330-D.pdf
MC10H330FN
Hersteller: onsemi
Description: IC DRIVER/RCVR QUAD BUS 28-PLCC
Packaging: Tube
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Number of Bits: 4
Logic Type: Driver/Receiver
Operating Temperature: 0°C ~ 75°C
Supplier Device Package: 28-PLCC (11.51x11.51)
auf Bestellung 1985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+14.18 EUR
Mindestbestellmenge: 36
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MC10H334L MOTOD171-2-88.pdf?t.download=true&u=5oefqw
MC10H334L
Hersteller: onsemi
Description: IC QUAD TRANSMITTER/RECEIVER
Packaging: Bulk
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+15.8 EUR
Mindestbestellmenge: 33
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MC10H332FN MC10H332-D.pdf
MC10H332FN
Hersteller: onsemi
Description: IC DRIVER/RCVR DUAL BUS 20PLCC
Packaging: Tube
Package / Case: 20-LCC (J-Lead)
Mounting Type: Surface Mount
Number of Bits: 2
Logic Type: Driver/Receiver
Operating Temperature: 0°C ~ 75°C
Supplier Device Package: 20-PLCC (9x9)
auf Bestellung 3169 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+23.4 EUR
Mindestbestellmenge: 22
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MC10H332FNR2 MC10H332-D.pdf
MC10H332FNR2
Hersteller: onsemi
Description: IC DRIVER/RCVR DUAL BUS 20PLCC
Packaging: Bulk
Package / Case: 20-LCC (J-Lead)
Mounting Type: Surface Mount
Number of Bits: 2
Logic Type: Driver/Receiver
Operating Temperature: 0°C ~ 75°C
Supplier Device Package: 20-PLCC (9x9)
auf Bestellung 2457 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+23.4 EUR
Mindestbestellmenge: 22
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MC10H334FNG MC10H334-D.pdf
MC10H334FNG
Hersteller: onsemi
Description: IC DRIVER/RCVR QUAD BUS 20PLCC
Packaging: Tube
Package / Case: 20-LCC (J-Lead)
Mounting Type: Surface Mount
Number of Bits: 4
Logic Type: Driver/Receiver
Operating Temperature: 0°C ~ 75°C
Supplier Device Package: 20-PLCC (9x9)
auf Bestellung 1252 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+23.4 EUR
Mindestbestellmenge: 22
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MC10H330PG MC10H330-D.pdf
MC10H330PG
Hersteller: onsemi
Description: IC DRIVER/RCVR QUAD BUS 24-DIP
Packaging: Tube
Package / Case: 24-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Bits: 4
Logic Type: Driver/Receiver
Operating Temperature: 0°C ~ 75°C
Supplier Device Package: 24-PDIP
auf Bestellung 4860 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+27.81 EUR
Mindestbestellmenge: 19
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MC10H330FNG MC10H330-D.pdf
MC10H330FNG
Hersteller: onsemi
Description: IC DRIVER/RCVR QUAD BUS 28-PLCC
Packaging: Tube
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Number of Bits: 4
Logic Type: Driver/Receiver
Operating Temperature: 0°C ~ 75°C
Supplier Device Package: 28-PLCC (11.51x11.51)
auf Bestellung 3648 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+28.37 EUR
Mindestbestellmenge: 18
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MC10H332FNG ONSMS10562-1.pdf?t.download=true&u=5oefqw
MC10H332FNG
Hersteller: onsemi
Description: BUS TRANSCEIVER, 10H SERIES, 2-F
Packaging: Bulk
auf Bestellung 2208 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+23.4 EUR
Mindestbestellmenge: 22
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74ACTQ273PC 74ACTQ273.pdf
74ACTQ273PC
Hersteller: onsemi
Description: IC FF D-TYPE SNGL 8BIT 20DIP
Packaging: Tube
Package / Case: 20-DIP (0.300", 7.62mm)
Output Type: Non-Inverted
Mounting Type: Through Hole
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 40 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 189 MHz
Input Capacitance: 4.5 pF
Supplier Device Package: 20-PDIP
Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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MC74AC00DR2G-Q
MC74AC00DR2G-Q
Hersteller: onsemi
Description: LOG CMOS GATE
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
Produkt ist nicht verfügbar
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MC74AC00DR2G-Q
MC74AC00DR2G-Q
Hersteller: onsemi
Description: LOG CMOS GATE
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
Produkt ist nicht verfügbar
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FQP8N60C fqp8n60c-d.pdf
FQP8N60C
Hersteller: onsemi
Description: MOSFET N-CH 600V 7.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3.75A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 25 V
Produkt ist nicht verfügbar
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MC74HC164ADR2G-Q mc74hc164a-d.pdf
MC74HC164ADR2G-Q
Hersteller: onsemi
Description: 8-BIT SERIAL-INPUT/PARALLEL-OUTP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 14-SOIC
Number of Bits per Element: 8
auf Bestellung 105000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.27 EUR
5000+0.26 EUR
12500+0.25 EUR
62500+0.24 EUR
Mindestbestellmenge: 2500
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MC74HC164ADR2G-Q mc74hc164a-d.pdf
MC74HC164ADR2G-Q
Hersteller: onsemi
Description: 8-BIT SERIAL-INPUT/PARALLEL-OUTP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 14-SOIC
Number of Bits per Element: 8
auf Bestellung 105000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
41+0.43 EUR
46+0.38 EUR
100+0.33 EUR
250+0.31 EUR
500+0.29 EUR
1000+0.28 EUR
Mindestbestellmenge: 29
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MOC8204SR2M moc8204m-d.pdf
MOC8204SR2M
Hersteller: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 400V
Turn On / Turn Off Time (Typ): 5µs, 5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1 EUR
2000+0.95 EUR
3000+0.92 EUR
Mindestbestellmenge: 1000
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MOC8204SR2M moc8204m-d.pdf
MOC8204SR2M
Hersteller: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 400V
Turn On / Turn Off Time (Typ): 5µs, 5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
auf Bestellung 4104 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.32 EUR
11+1.65 EUR
100+1.24 EUR
500+1.06 EUR
Mindestbestellmenge: 8
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1N4004G 1n4001-d.pdf
1N4004G
Hersteller: onsemi
Description: DIODE STANDARD 400V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 40923 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
141+0.12 EUR
500+0.081 EUR
1000+0.073 EUR
2000+0.065 EUR
5000+0.059 EUR
10000+0.056 EUR
Mindestbestellmenge: 84
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1.5KE16A 1N6267A_Series.pdf
1.5KE16A
Hersteller: onsemi
Description: TVS DIODE 13.6VWM 22.5VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 67A
Voltage - Reverse Standoff (Typ): 13.6V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.2V
Voltage - Clamping (Max) @ Ipp: 22.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
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FFSB20120A ffsb20120a-d.pdf
FFSB20120A
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 32A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1220pF @ 1V, 100KHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+6.55 EUR
Mindestbestellmenge: 800
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FFSB20120A ffsb20120a-d.pdf
FFSB20120A
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 32A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1220pF @ 1V, 100KHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
auf Bestellung 3664 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+14.82 EUR
10+10.13 EUR
100+7.48 EUR
Mindestbestellmenge: 2
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FFSH20120A-F085 ffsh20120a-f085-d.pdf
FFSH20120A-F085
Hersteller: onsemi
Description: DIODE SIL CARB 1.2KV 30A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1220pF @ 1V, 100KHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 8048 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+16.81 EUR
30+12.29 EUR
Mindestbestellmenge: 2
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FFSB20120A-F085 ffsb20120a-f085-d.pdf
FFSB20120A-F085
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 32A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1220pF @ 1V, 100KHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+11.24 EUR
Mindestbestellmenge: 800
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FFSB20120A-F085 ffsb20120a-f085-d.pdf
FFSB20120A-F085
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 32A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1220pF @ 1V, 100KHz
Current - Average Rectified (Io): 32A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 1579 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.5 EUR
10+15.41 EUR
100+13.76 EUR
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FFSH40120ADN-F085 ffsh40120adn-f085-d.pdf
FFSH40120ADN-F085
Hersteller: onsemi
Description: DIODE SIL CARB 1200V 25A TO2473
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1220pF @ 1V, 100KHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 410 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+23.46 EUR
10+20.98 EUR
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FDS9431A-TF085 FDS9431A_F085-D.PDF
FDS9431A-TF085
Hersteller: onsemi
Description: P-CHANNEL 2.5V SPECIFIED MOSFET,
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 405 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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ISL9V5036S3ST-F085C ISL9V5036S3ST-D.PDF
ISL9V5036S3ST-F085C
Hersteller: onsemi
Description: IGBT 390V 46A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 2.1 µs
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 700ns/10.8µs
Gate Charge: 32 nC
Grade: Automotive
Current - Collector (Ic) (Max): 46 A
Voltage - Collector Emitter Breakdown (Max): 390 V
Power - Max: 250 W
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MTBV30P06VT4G MTB30P06V-D.PDF
MTBV30P06VT4G
Hersteller: onsemi
Description: POWER MOSFET -60V -30A 80 MOHM S
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 15A, 10V
Power Dissipation (Max): 3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2190 pF @ 10 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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H11AA1 H11AA_1%2C2%2C3%2C4.pdf
H11AA1
Hersteller: onsemi
Description: OPTOISO 5.3KV TRANS W/BASE 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: AC, DC
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Produkt ist nicht verfügbar
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H11AA1W H11AA_1%2C2%2C3%2C4.pdf
H11AA1W
Hersteller: onsemi
Description: OPTOISO 5.3KV TRANS W/BASE 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: AC, DC
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Produkt ist nicht verfügbar
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BD233STU FAIRS19014-1.pdf?t.download=true&u=5oefqw
BD233STU
Hersteller: onsemi
Description: TRANS NPN 45V 2A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 25 W
Produkt ist nicht verfügbar
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KSD363R ksd363-d.pdf
KSD363R
Hersteller: onsemi
Description: TRANS NPN 120V 6A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Current - Collector Cutoff (Max): 1mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 40 W
Produkt ist nicht verfügbar
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2N5415 TN5415A.pdf
Hersteller: onsemi
Description: TRANS PNP 200V 0.1A TO-39
Package / Case: TO-39
Mounting Type: Through Hole
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 5mA, 50mA
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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CAS34TS00VP2GT4A
CAS34TS00VP2GT4A
Hersteller: onsemi
Description: TEMP SENSOR WITH NO MEMORY
Packaging: Tape & Reel (TR)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.73 EUR
8000+0.7 EUR
Mindestbestellmenge: 4000
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CAS34TS00VP2GT4A
CAS34TS00VP2GT4A
Hersteller: onsemi
Description: TEMP SENSOR WITH NO MEMORY
Packaging: Cut Tape (CT)
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.43 EUR
15+1.2 EUR
16+1.12 EUR
25+1.04 EUR
50+0.98 EUR
100+0.93 EUR
500+0.83 EUR
1000+0.79 EUR
Mindestbestellmenge: 13
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MC74HC4053DR2 MOTOD158-3-615.pdf?t.download=true&u=5oefqw
MC74HC4053DR2
Hersteller: onsemi
Description: ANALOG MUX TRIPLE 2:1
Packaging: Bulk
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1366+0.34 EUR
Mindestbestellmenge: 1366
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SBRD8320G-VF01
SBRD8320G-VF01
Hersteller: onsemi
Description: DIODE SCHOTTKY 20V 3A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Qualification: AEC-Q101
auf Bestellung 5775 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
798+0.64 EUR
Mindestbestellmenge: 798
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SBRD8320G-VF01
SBRD8320G-VF01
Hersteller: onsemi
Description: DIODE SCHOTTKY 20V 3A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 3 A
Current - Reverse Leakage @ Vr: 200 µA @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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