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NCP717AMX190TCG NCP717AMX190TCG onsemi ncp717-d.pdf Description: IC REG LINEAR 1.9V 300MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 1.9V
Control Features: Enable
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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NCP717AMX280TCG NCP717AMX280TCG onsemi ncp717-d.pdf Description: IC REG LINEAR 2.8V 300MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 300mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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NCP717AMX300TCG NCP717AMX300TCG onsemi ncp717-d.pdf Description: IC REG LINEAR 3V 300MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.25V @ 300mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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NCP717AMX310TCG NCP717AMX310TCG onsemi ncp717-d.pdf Description: IC REG LINEAR 3.1V 300MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 3.1V
Control Features: Enable
PSRR: 70dB ~ 55dB (1kHz ~ 10kHz)
Voltage Dropout (Max): 0.235V @ 300mA
Protection Features: Over Current, Over Temperature
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NL17SG17AMUTCG NL17SG17AMUTCG onsemi nl17sg17-d.pdf Description: IC INVERTER 3.6V 6-UDFN
Packaging: Bulk
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 6-UDFN (1.45x1)
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1N5369B 1N5369B onsemi 1n5333b-d.pdf description Description: DIODE ZENER 51V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 27 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 38.8 V
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NCT51SN115T1 NCT51SN115T1 onsemi ONSM-S-A0005940589-1.pdf?t.download=true&u=5oefqw Description: ANALOG CIRCUIT, 1 FUNC, PDSO5
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Sensor Type: Analog
Supplier Device Package: SOT-23-5
Accuracy - Highest (Lowest): ±0.5°C
Sensing Temperature - Local: -55°C ~ 125°C
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MC74ACT540ML1 MC74ACT540ML1 onsemi ONSMS22056-1.pdf?t.download=true&u=5oefqw Description: BUS DRIVER, ACT SERIES, 8-BIT
Packaging: Bulk
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MB2S MB2S onsemi MB8S-D.PDF Description: BRIDGE RECT 1P 200V 500MA 4-SOIC
Packaging: Tape & Reel (TR)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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MB2S MB2S onsemi MB8S-D.PDF Description: BRIDGE RECT 1P 200V 500MA 4-SOIC
Packaging: Cut Tape (CT)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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FNA41560B5 FNA41560B5 onsemi fna41560b2-d.pdf Description: IGBT IPM 600V 15A 26-PWRDIP MOD
Voltage: 600 V
Current: 15 A
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 26-PowerDIP Module (1.024", 26.00mm)
Packaging: Tube
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NDD60N360U1-35G NDD60N360U1-35G onsemi NDD60N360U1.pdf Description: MOSFET N-CH 600V 11A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
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FGHL25T120RWD FGHL25T120RWD onsemi fghl25t120rwd-d.pdf Description: 1200V, 25A TRENCH FIELD STOP VII
Power - Max: 468 W
Current - Collector Pulsed (Icm): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Gate Charge: 113 nC
Test Condition: 600V, 25A, 4.7Ohm, 15V
Switching Energy: 1.57mJ (on), 1.06mJ (off)
Td (on/off) @ 25°C: 36.9ns/175ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 1.73V @ 15V, 25A
Reverse Recovery Time (trr): 173 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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2N7002K 2N7002K onsemi 2N7002K-FSC-D.PDF Description: MOSFET N-CH 60V 320MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 24.5 pF @ 20 V
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2N7002K 2N7002K onsemi 2N7002K-FSC-D.PDF Description: MOSFET N-CH 60V 320MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 24.5 pF @ 20 V
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AR0246NPSC32SMKAH3-GEVB AR0246NPSC32SMKAH3-GEVB onsemi Description: AR0246 DEMO3HEAD CSP53 RGB 32 DE
Contents: Board(s)
Interface: MIPI
Sensitivity: 60fps
Packaging: Box
Sensor Type: Image Sensor
Embedded: No
Utilized IC / Part: AR0246
Sensing Range: 2 Megapixel
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AR0246NPSC32SMD20-RC1 AR0246NPSC32SMD20-RC1 onsemi ar0246-pd-d.pdf Description: IMAGE SENSOR, 2.0 MP, ROLLING SH
Frames per Second: 60.0
Supplier Device Package: 53-ODCSP (5.31x3.61)
Active Pixel Array: 1920H x 1080V
Pixel Size: 2µm x 2µm
Voltage - Supply: 2.7V ~ 2.9V
Operating Temperature: -30°C ~ 85°C
Type: CMOS
Package / Case: 53-WFBGA, CSPBGA
Packaging: Bulk
Produkt ist nicht verfügbar
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MC74AC86DTR2G-Q MC74AC86DTR2G-Q onsemi mc74ac86-d.pdf Description: LOG CMOS GATE EXCLSV OR
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
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MC74AC86DTR2G-Q MC74AC86DTR2G-Q onsemi mc74ac86-d.pdf Description: LOG CMOS GATE EXCLSV OR
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
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500+0.26 EUR
1000+0.25 EUR
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LB11970FV-TLM-H LB11970FV-TLM-H onsemi LB11970FV.pdf Description: IC MOTOR DRIVER 4.5V-16V 18SSOP
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: 18-SSOP
Voltage - Load: 3.5V ~ 16V
Technology: Bipolar
Applications: Fan Motor Driver
Voltage - Supply: 4.5V ~ 16V
Output Configuration: Half Bridge (2)
Operating Temperature: -30°C ~ 90°C (TA)
Interface: Parallel, PWM
Current - Output: 1.2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 18-LSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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LB11970FV-TLM-E LB11970FV-TLM-E onsemi LB11970FV.pdf Description: IC MOTOR DRIVER 4.5V-16V 18SSOP
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: 18-SSOP
Voltage - Load: 3.5V ~ 16V
Technology: Bipolar
Applications: Fan Motor Driver
Voltage - Supply: 4.5V ~ 16V
Output Configuration: Half Bridge (2)
Operating Temperature: -30°C ~ 90°C (TA)
Interface: Parallel, PWM
Current - Output: 1.2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 18-LSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MBR745 MBR745 onsemi mbr735-d.pdf Description: DIODE SCHOTTKY 45V 7.5A TO2202
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 7.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
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GBPC3508W GBPC3508W onsemi gbpc3510-d.pdf Description: BRIDGE RECT 1P 800V 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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DTA144EET1G DTA144EET1G onsemi dta144e-d.pdf Description: TRANS PREBIAS PNP 50V 0.1A SC75
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-75, SOT-416
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Bulk
Resistors Included: R1 and R2
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TL494CD TL494CD onsemi TL494-D.pdf Description: IC REG CTRLR BCK/PSH-PULL 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down, Step-Up/Step-Down
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz
Topology: Buck, Push-Pull
Voltage - Supply (Vcc/Vdd): 7V ~ 40V
Supplier Device Package: 16-SOIC
Synchronous Rectifier: Yes
Control Features: Dead Time Control, Frequency Control
Output Phases: 1
Duty Cycle (Max): 48%
Clock Sync: No
Number of Outputs: 2
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1N5929B 1N5929B onsemi 1n5913b-d.pdf Description: DIODE ZENER 15V 3W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: Axial
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11.4 V
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6N137M 6N137M onsemi HCPL2631M-D.PDF Description: OPTOISOLTR 5KV OPEN COLL 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 50 mA
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500+1.54 EUR
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NVMJS1D6N06CLTWG NVMJS1D6N06CLTWG onsemi nvmjs1d6n06cl-d.pdf Description: MOSFET N-CH 60V 38A/250A 8LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Qualification: AEC-Q101
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NVMJS1D6N06CLTWG NVMJS1D6N06CLTWG onsemi nvmjs1d6n06cl-d.pdf Description: MOSFET N-CH 60V 38A/250A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Qualification: AEC-Q101
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500+2.13 EUR
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FGY4L100T120SWD FGY4L100T120SWD onsemi fgy4l100t120swd-d.pdf Description: IGBT FS 1200V 200A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 249.4 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 59.2ns/232.4ns
Switching Energy: 2.8mJ (on), 3.5mJ (off)
Test Condition: 600V, 100A, 7Ohm, 15V
Gate Charge: 308 nC
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 1.071 kW
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1N747A 1N747A onsemi 1N4370A%2C1N4372A.1N746A%2C1N759A.pdf Description: DIODE ZENER 3.6V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Produkt ist nicht verfügbar
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CD4011BCSJX CD4011BCSJX onsemi CD4001BC%2C11BC.pdf Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 15V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 70ns @ 15V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
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CD4011BCSJ CD4011BCSJ onsemi CD4001BC%2C11BC.pdf Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Tube
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 15V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 70ns @ 15V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
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NCV7707DQCR2G NCV7707DQCR2G onsemi ncv7707c-d.pdf Description: IC DOOR MODULE DRIVER 36SSOP
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 8V ~ 18V
Current - Supply: 6.5mA
Supplier Device Package: 36-SSOP-EP
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NCV7707DQCR2G NCV7707DQCR2G onsemi ncv7707c-d.pdf Description: IC DOOR MODULE DRIVER 36SSOP
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 8V ~ 18V
Current - Supply: 6.5mA
Supplier Device Package: 36-SSOP-EP
Grade: Automotive
Qualification: AEC-Q100
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NCV7707DQDR2G NCV7707DQDR2G onsemi ncv7707c-d.pdf Description: NCV7707DQDR2G OPN FOR CA
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 28V
Applications: Door Electronic Systems
Current - Supply: 8mA
Supplier Device Package: 36-SSOP-EP
Grade: Automotive
Qualification: AEC-Q100
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NCV7707DQDR2G NCV7707DQDR2G onsemi ncv7707c-d.pdf Description: NCV7707DQDR2G OPN FOR CA
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 28V
Applications: Door Electronic Systems
Current - Supply: 8mA
Supplier Device Package: 36-SSOP-EP
Grade: Automotive
Qualification: AEC-Q100
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10+11.93 EUR
25+11.09 EUR
100+10.17 EUR
250+9.73 EUR
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NCV7707GEVB onsemi ncv7707-d.pdf Description: EVAL BOARD FOR NCV7707
Packaging: Box
Function: Half H-Bridge Driver (Internal FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: NCV7707
Secondary Attributes: SPI Interface(s)
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NCV7707DQBR2G NCV7707DQBR2G onsemi Description: IC DRIVER HALF BRIDGE 36SSOP
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Current - Supply: 8mA
Supplier Device Package: 36-SSOP-EP
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NCV7707CGEVB onsemi Description: CV7707C DOOR MODULE DRIVER EVALU
Packaging: Bulk
Function: Half H-Bridge Driver (Internal FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: NCV7707C
Embedded: No
Produkt ist nicht verfügbar
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NVTFS5C478NLTAG NVTFS5C478NLTAG onsemi nvtfs5c478nl-d.pdf Description: MOSFET N-CHANNEL 40V 26A 8WDFN
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
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NVTFS5C478NLTAG NVTFS5C478NLTAG onsemi nvtfs5c478nl-d.pdf Description: MOSFET N-CHANNEL 40V 26A 8WDFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
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NVTFS6H860NLTAG NVTFS6H860NLTAG onsemi nvtfs6h860nl-d.pdf Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
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NVTFS6H860NTAG NVTFS6H860NTAG onsemi nvtfs6h860n-d.pdf Description: MOSFET N-CH 80V 8A/30A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 21.1mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
Qualification: AEC-Q101
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NVTFS6H860NTAG NVTFS6H860NTAG onsemi nvtfs6h860n-d.pdf Description: MOSFET N-CH 80V 8A/30A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 21.1mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
Qualification: AEC-Q101
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NVTFS6H860NLWFTAG NVTFS6H860NLWFTAG onsemi nvtfs6h860nl-d.pdf Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
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NVTFS4C13NETAG NVTFS4C13NETAG onsemi nvtfs4c13n-d.pdf Description: MOSFET N-CH 30V 14A 8WDFN
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 3W (Ta), 26W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V
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NVTFS4C13NETAG NVTFS4C13NETAG onsemi nvtfs4c13n-d.pdf Description: MOSFET N-CH 30V 14A 8WDFN
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 3W (Ta), 26W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
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NVTFS5C460NLTAG NVTFS5C460NLTAG onsemi nvtfs5c460nl-d.pdf Description: MOSFET N-CH 40V 19A/74A 8WDFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 74A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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NVTFS5C460NLTAG NVTFS5C460NLTAG onsemi nvtfs5c460nl-d.pdf Description: MOSFET N-CH 40V 19A/74A 8WDFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 74A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
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NVTFS5C466NLWFTAG NVTFS5C466NLWFTAG onsemi nvtfs5c466nl-d.pdf Description: MOSFET N-CHANNEL 40V 51A 8WDFN
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
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NVTFS5C466NLWFTAG NVTFS5C466NLWFTAG onsemi nvtfs5c466nl-d.pdf Description: MOSFET N-CHANNEL 40V 51A 8WDFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 16164 Stücke:
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500+1.03 EUR
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NVTFS6H850NLTAG NVTFS6H850NLTAG onsemi nvtfs6h850nl-d.pdf Description: MOSFET N-CH 80V 14.8A/64A 8WDFN
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 70µA
Power Dissipation (Max): 3.9W (Ta), 73W (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 64A (Tc)
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NVTFS6H850NLTAG NVTFS6H850NLTAG onsemi nvtfs6h850nl-d.pdf Description: MOSFET N-CH 80V 14.8A/64A 8WDFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 70µA
Power Dissipation (Max): 3.9W (Ta), 73W (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 64A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
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NVTFS5C658NLWFTAG NVTFS5C658NLWFTAG onsemi nvtfs5c658nl-d.pdf Description: MOSFET N-CH 60V 109A 8WDFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 109A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NVTFS5C658NLWFTAG NVTFS5C658NLWFTAG onsemi nvtfs5c658nl-d.pdf Description: MOSFET N-CH 60V 109A 8WDFN
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 109A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
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NVMJS1D2N04CLTWG NVMJS1D2N04CLTWG onsemi nvmjs1d2n04cl-d.pdf Description: MOSFET N-CH 40V 41A/237A 8LFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2V @ 170µA
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
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NVMJS1D2N04CLTWG NVMJS1D2N04CLTWG onsemi nvmjs1d2n04cl-d.pdf Description: MOSFET N-CH 40V 41A/237A 8LFPAK
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2V @ 170µA
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
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LM2904MX LM2904MX onsemi FAIRS29207-1.pdf?t.download=true&u=5oefqw description Description: LM2904-N LOW POWER DUAL OPERATIO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 800µA (x2 Channels)
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 26 V
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DF005M DF005M onsemi DF10M-D.pdf Description: BRIDGE RECT 1P 50V 1.5A 4-DIP
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 50 V
Supplier Device Package: 4-DIP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.300", 7.62mm)
Packaging: Tube
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NCP717AMX190TCG ncp717-d.pdf
NCP717AMX190TCG
Hersteller: onsemi
Description: IC REG LINEAR 1.9V 300MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 1.9V
Control Features: Enable
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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NCP717AMX280TCG ncp717-d.pdf
NCP717AMX280TCG
Hersteller: onsemi
Description: IC REG LINEAR 2.8V 300MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 2.8V
Control Features: Enable
Voltage Dropout (Max): 0.28V @ 300mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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NCP717AMX300TCG ncp717-d.pdf
NCP717AMX300TCG
Hersteller: onsemi
Description: IC REG LINEAR 3V 300MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Voltage Dropout (Max): 0.25V @ 300mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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NCP717AMX310TCG ncp717-d.pdf
NCP717AMX310TCG
Hersteller: onsemi
Description: IC REG LINEAR 3.1V 300MA 4-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 300mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 35 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 3.1V
Control Features: Enable
PSRR: 70dB ~ 55dB (1kHz ~ 10kHz)
Voltage Dropout (Max): 0.235V @ 300mA
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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NL17SG17AMUTCG nl17sg17-d.pdf
NL17SG17AMUTCG
Hersteller: onsemi
Description: IC INVERTER 3.6V 6-UDFN
Packaging: Bulk
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 6-UDFN (1.45x1)
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1N5369B description 1n5333b-d.pdf
1N5369B
Hersteller: onsemi
Description: DIODE ZENER 51V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 27 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 38.8 V
Produkt ist nicht verfügbar
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NCT51SN115T1 ONSM-S-A0005940589-1.pdf?t.download=true&u=5oefqw
NCT51SN115T1
Hersteller: onsemi
Description: ANALOG CIRCUIT, 1 FUNC, PDSO5
Packaging: Bulk
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2.7V ~ 5.5V
Sensor Type: Analog
Supplier Device Package: SOT-23-5
Accuracy - Highest (Lowest): ±0.5°C
Sensing Temperature - Local: -55°C ~ 125°C
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MC74ACT540ML1 ONSMS22056-1.pdf?t.download=true&u=5oefqw
MC74ACT540ML1
Hersteller: onsemi
Description: BUS DRIVER, ACT SERIES, 8-BIT
Packaging: Bulk
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AnzahlPreis
1040+0.44 EUR
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MB2S MB8S-D.PDF
MB2S
Hersteller: onsemi
Description: BRIDGE RECT 1P 200V 500MA 4-SOIC
Packaging: Tape & Reel (TR)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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MB2S MB8S-D.PDF
MB2S
Hersteller: onsemi
Description: BRIDGE RECT 1P 200V 500MA 4-SOIC
Packaging: Cut Tape (CT)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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FNA41560B5 fna41560b2-d.pdf
FNA41560B5
Hersteller: onsemi
Description: IGBT IPM 600V 15A 26-PWRDIP MOD
Voltage: 600 V
Current: 15 A
Voltage - Isolation: 2000Vrms
Configuration: 3 Phase Inverter
Type: IGBT
Mounting Type: Through Hole
Package / Case: 26-PowerDIP Module (1.024", 26.00mm)
Packaging: Tube
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NDD60N360U1-35G NDD60N360U1.pdf
NDD60N360U1-35G
Hersteller: onsemi
Description: MOSFET N-CH 600V 11A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 790 pF @ 50 V
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FGHL25T120RWD fghl25t120rwd-d.pdf
FGHL25T120RWD
Hersteller: onsemi
Description: 1200V, 25A TRENCH FIELD STOP VII
Power - Max: 468 W
Current - Collector Pulsed (Icm): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Gate Charge: 113 nC
Test Condition: 600V, 25A, 4.7Ohm, 15V
Switching Energy: 1.57mJ (on), 1.06mJ (off)
Td (on/off) @ 25°C: 36.9ns/175ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 1.73V @ 15V, 25A
Reverse Recovery Time (trr): 173 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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2+8.94 EUR
10+5.99 EUR
450+3.64 EUR
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2N7002K 2N7002K-FSC-D.PDF
2N7002K
Hersteller: onsemi
Description: MOSFET N-CH 60V 320MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 24.5 pF @ 20 V
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3000+0.098 EUR
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2N7002K 2N7002K-FSC-D.PDF
2N7002K
Hersteller: onsemi
Description: MOSFET N-CH 60V 320MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 24.5 pF @ 20 V
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36+0.49 EUR
58+0.31 EUR
100+0.19 EUR
500+0.14 EUR
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AR0246NPSC32SMKAH3-GEVB
AR0246NPSC32SMKAH3-GEVB
Hersteller: onsemi
Description: AR0246 DEMO3HEAD CSP53 RGB 32 DE
Contents: Board(s)
Interface: MIPI
Sensitivity: 60fps
Packaging: Box
Sensor Type: Image Sensor
Embedded: No
Utilized IC / Part: AR0246
Sensing Range: 2 Megapixel
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AR0246NPSC32SMD20-RC1 ar0246-pd-d.pdf
AR0246NPSC32SMD20-RC1
Hersteller: onsemi
Description: IMAGE SENSOR, 2.0 MP, ROLLING SH
Frames per Second: 60.0
Supplier Device Package: 53-ODCSP (5.31x3.61)
Active Pixel Array: 1920H x 1080V
Pixel Size: 2µm x 2µm
Voltage - Supply: 2.7V ~ 2.9V
Operating Temperature: -30°C ~ 85°C
Type: CMOS
Package / Case: 53-WFBGA, CSPBGA
Packaging: Bulk
Produkt ist nicht verfügbar
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MC74AC86DTR2G-Q mc74ac86-d.pdf
MC74AC86DTR2G-Q
Hersteller: onsemi
Description: LOG CMOS GATE EXCLSV OR
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
auf Bestellung 60000 Stücke:
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2500+0.24 EUR
5000+0.23 EUR
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MC74AC86DTR2G-Q mc74ac86-d.pdf
MC74AC86DTR2G-Q
Hersteller: onsemi
Description: LOG CMOS GATE EXCLSV OR
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
33+0.55 EUR
46+0.39 EUR
51+0.35 EUR
100+0.3 EUR
250+0.28 EUR
500+0.26 EUR
1000+0.25 EUR
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LB11970FV-TLM-H LB11970FV.pdf
LB11970FV-TLM-H
Hersteller: onsemi
Description: IC MOTOR DRIVER 4.5V-16V 18SSOP
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: 18-SSOP
Voltage - Load: 3.5V ~ 16V
Technology: Bipolar
Applications: Fan Motor Driver
Voltage - Supply: 4.5V ~ 16V
Output Configuration: Half Bridge (2)
Operating Temperature: -30°C ~ 90°C (TA)
Interface: Parallel, PWM
Current - Output: 1.2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 18-LSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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LB11970FV-TLM-E LB11970FV.pdf
LB11970FV-TLM-E
Hersteller: onsemi
Description: IC MOTOR DRIVER 4.5V-16V 18SSOP
Motor Type - AC, DC: Brushless DC (BLDC)
Supplier Device Package: 18-SSOP
Voltage - Load: 3.5V ~ 16V
Technology: Bipolar
Applications: Fan Motor Driver
Voltage - Supply: 4.5V ~ 16V
Output Configuration: Half Bridge (2)
Operating Temperature: -30°C ~ 90°C (TA)
Interface: Parallel, PWM
Current - Output: 1.2A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Surface Mount
Package / Case: 18-LSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MBR745 mbr735-d.pdf
MBR745
Hersteller: onsemi
Description: DIODE SCHOTTKY 45V 7.5A TO2202
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 7.5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Produkt ist nicht verfügbar
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GBPC3508W gbpc3510-d.pdf
GBPC3508W
Hersteller: onsemi
Description: BRIDGE RECT 1P 800V 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 120 Stücke:
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AnzahlPreis
2+10.19 EUR
10+6.87 EUR
100+4.98 EUR
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DTA144EET1G dta144e-d.pdf
DTA144EET1G
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-75, SOT-416
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Bulk
Resistors Included: R1 and R2
auf Bestellung 69983 Stücke:
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AnzahlPreis
7869+0.061 EUR
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TL494CD TL494-D.pdf
TL494CD
Hersteller: onsemi
Description: IC REG CTRLR BCK/PSH-PULL 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down, Step-Up/Step-Down
Operating Temperature: 0°C ~ 70°C (TA)
Output Configuration: Positive
Frequency - Switching: 200kHz
Topology: Buck, Push-Pull
Voltage - Supply (Vcc/Vdd): 7V ~ 40V
Supplier Device Package: 16-SOIC
Synchronous Rectifier: Yes
Control Features: Dead Time Control, Frequency Control
Output Phases: 1
Duty Cycle (Max): 48%
Clock Sync: No
Number of Outputs: 2
Produkt ist nicht verfügbar
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1N5929B 1n5913b-d.pdf
1N5929B
Hersteller: onsemi
Description: DIODE ZENER 15V 3W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: Axial
Power - Max: 3 W
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11.4 V
Produkt ist nicht verfügbar
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6N137M HCPL2631M-D.PDF
6N137M
Hersteller: onsemi
Description: OPTOISOLTR 5KV OPEN COLL 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Open Collector
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-DIP
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 1146 Stücke:
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6+3.24 EUR
50+1.91 EUR
100+1.78 EUR
500+1.54 EUR
1000+1.46 EUR
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NVMJS1D6N06CLTWG nvmjs1d6n06cl-d.pdf
NVMJS1D6N06CLTWG
Hersteller: onsemi
Description: MOSFET N-CH 60V 38A/250A 8LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
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3000+1.74 EUR
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NVMJS1D6N06CLTWG nvmjs1d6n06cl-d.pdf
NVMJS1D6N06CLTWG
Hersteller: onsemi
Description: MOSFET N-CH 60V 38A/250A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.36mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6660 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 9361 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+5.39 EUR
10+3.51 EUR
100+2.45 EUR
500+2.13 EUR
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FGY4L100T120SWD fgy4l100t120swd-d.pdf
FGY4L100T120SWD
Hersteller: onsemi
Description: IGBT FS 1200V 200A TO-247-4L
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 249.4 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 100A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 59.2ns/232.4ns
Switching Energy: 2.8mJ (on), 3.5mJ (off)
Test Condition: 600V, 100A, 7Ohm, 15V
Gate Charge: 308 nC
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 1.071 kW
auf Bestellung 6564 Stücke:
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AnzahlPreis
2+14.26 EUR
30+8.63 EUR
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1N747A 1N4370A%2C1N4372A.1N746A%2C1N759A.pdf
1N747A
Hersteller: onsemi
Description: DIODE ZENER 3.6V 500MW DO35
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Produkt ist nicht verfügbar
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CD4011BCSJX CD4001BC%2C11BC.pdf
CD4011BCSJX
Hersteller: onsemi
Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 15V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 70ns @ 15V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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CD4011BCSJ CD4001BC%2C11BC.pdf
CD4011BCSJ
Hersteller: onsemi
Description: IC GATE NAND 4CH 2-INP 14SOP
Packaging: Tube
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 15V
Current - Output High, Low: 3.4mA, 3.4mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 3.5V ~ 11V
Input Logic Level - Low: 1.5V ~ 4V
Max Propagation Delay @ V, Max CL: 70ns @ 15V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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NCV7707DQCR2G ncv7707c-d.pdf
NCV7707DQCR2G
Hersteller: onsemi
Description: IC DOOR MODULE DRIVER 36SSOP
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 8V ~ 18V
Current - Supply: 6.5mA
Supplier Device Package: 36-SSOP-EP
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NCV7707DQCR2G ncv7707c-d.pdf
NCV7707DQCR2G
Hersteller: onsemi
Description: IC DOOR MODULE DRIVER 36SSOP
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 8V ~ 18V
Current - Supply: 6.5mA
Supplier Device Package: 36-SSOP-EP
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1382 Stücke:
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AnzahlPreis
2+12.95 EUR
10+10.05 EUR
25+9.33 EUR
100+8.53 EUR
250+8.15 EUR
500+7.93 EUR
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NCV7707DQDR2G ncv7707c-d.pdf
NCV7707DQDR2G
Hersteller: onsemi
Description: NCV7707DQDR2G OPN FOR CA
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 28V
Applications: Door Electronic Systems
Current - Supply: 8mA
Supplier Device Package: 36-SSOP-EP
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
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AnzahlPreis
1500+9.14 EUR
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NCV7707DQDR2G ncv7707c-d.pdf
NCV7707DQDR2G
Hersteller: onsemi
Description: NCV7707DQDR2G OPN FOR CA
Packaging: Cut Tape (CT)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5V ~ 28V
Applications: Door Electronic Systems
Current - Supply: 8mA
Supplier Device Package: 36-SSOP-EP
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+15.28 EUR
10+11.93 EUR
25+11.09 EUR
100+10.17 EUR
250+9.73 EUR
500+9.46 EUR
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NCV7707GEVB ncv7707-d.pdf
Hersteller: onsemi
Description: EVAL BOARD FOR NCV7707
Packaging: Box
Function: Half H-Bridge Driver (Internal FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: NCV7707
Secondary Attributes: SPI Interface(s)
Produkt ist nicht verfügbar
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NCV7707DQBR2G
NCV7707DQBR2G
Hersteller: onsemi
Description: IC DRIVER HALF BRIDGE 36SSOP
Packaging: Tape & Reel (TR)
Package / Case: 36-BFSOP (0.295", 7.50mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 5.5V ~ 28V
Current - Supply: 8mA
Supplier Device Package: 36-SSOP-EP
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NCV7707CGEVB
Hersteller: onsemi
Description: CV7707C DOOR MODULE DRIVER EVALU
Packaging: Bulk
Function: Half H-Bridge Driver (Internal FET)
Type: Power Management
Contents: Board(s)
Utilized IC / Part: NCV7707C
Embedded: No
Produkt ist nicht verfügbar
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NVTFS5C478NLTAG nvtfs5c478nl-d.pdf
NVTFS5C478NLTAG
Hersteller: onsemi
Description: MOSFET N-CHANNEL 40V 26A 8WDFN
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
auf Bestellung 1500 Stücke:
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AnzahlPreis
1500+0.67 EUR
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NVTFS5C478NLTAG nvtfs5c478nl-d.pdf
NVTFS5C478NLTAG
Hersteller: onsemi
Description: MOSFET N-CHANNEL 40V 26A 8WDFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Power Dissipation (Max): 20W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 1654 Stücke:
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AnzahlPreis
9+2.18 EUR
13+1.39 EUR
100+0.99 EUR
500+0.78 EUR
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NVTFS6H860NLTAG nvtfs6h860nl-d.pdf
NVTFS6H860NLTAG
Hersteller: onsemi
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
auf Bestellung 3569 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.52 EUR
12+1.6 EUR
100+1.07 EUR
500+0.84 EUR
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NVTFS6H860NTAG nvtfs6h860n-d.pdf
NVTFS6H860NTAG
Hersteller: onsemi
Description: MOSFET N-CH 80V 8A/30A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 21.1mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1500+0.4 EUR
3000+0.36 EUR
4500+0.35 EUR
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NVTFS6H860NTAG nvtfs6h860n-d.pdf
NVTFS6H860NTAG
Hersteller: onsemi
Description: MOSFET N-CH 80V 8A/30A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 21.1mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 4V @ 30µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 8.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 4809 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
12+1.48 EUR
20+0.92 EUR
100+0.6 EUR
500+0.46 EUR
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NVTFS6H860NLWFTAG nvtfs6h860nl-d.pdf
NVTFS6H860NLWFTAG
Hersteller: onsemi
Description: MOSFET N-CH 80V 8.1A/30A 8WDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 30µA
Power Dissipation (Max): 3.1W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
auf Bestellung 290666 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.22 EUR
13+1.46 EUR
100+1 EUR
500+0.83 EUR
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NVTFS4C13NETAG nvtfs4c13n-d.pdf
NVTFS4C13NETAG
Hersteller: onsemi
Description: MOSFET N-CH 30V 14A 8WDFN
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 3W (Ta), 26W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1500+0.64 EUR
3000+0.59 EUR
4500+0.57 EUR
7500+0.54 EUR
10500+0.53 EUR
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NVTFS4C13NETAG nvtfs4c13n-d.pdf
NVTFS4C13NETAG
Hersteller: onsemi
Description: MOSFET N-CH 30V 14A 8WDFN
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 3W (Ta), 26W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 15.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
auf Bestellung 84335 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.25 EUR
13+1.42 EUR
100+0.94 EUR
500+0.74 EUR
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NVTFS5C460NLTAG nvtfs5c460nl-d.pdf
NVTFS5C460NLTAG
Hersteller: onsemi
Description: MOSFET N-CH 40V 19A/74A 8WDFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 74A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1500+0.8 EUR
Mindestbestellmenge: 1500 Stücke
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NVTFS5C460NLTAG nvtfs5c460nl-d.pdf
NVTFS5C460NLTAG
Hersteller: onsemi
Description: MOSFET N-CH 40V 19A/74A 8WDFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 40µA
Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 74A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 1928 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.41 EUR
11+1.7 EUR
100+1.2 EUR
500+0.96 EUR
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NVTFS5C466NLWFTAG nvtfs5c466nl-d.pdf
NVTFS5C466NLWFTAG
Hersteller: onsemi
Description: MOSFET N-CHANNEL 40V 51A 8WDFN
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1500+0.84 EUR
3000+0.82 EUR
4500+0.8 EUR
7500+0.79 EUR
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NVTFS5C466NLWFTAG nvtfs5c466nl-d.pdf
NVTFS5C466NLWFTAG
Hersteller: onsemi
Description: MOSFET N-CHANNEL 40V 51A 8WDFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 38W (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 16164 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.59 EUR
10+1.9 EUR
100+1.3 EUR
500+1.03 EUR
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NVTFS6H850NLTAG nvtfs6h850nl-d.pdf
NVTFS6H850NLTAG
Hersteller: onsemi
Description: MOSFET N-CH 80V 14.8A/64A 8WDFN
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 70µA
Power Dissipation (Max): 3.9W (Ta), 73W (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 64A (Tc)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1500+0.95 EUR
3000+0.88 EUR
4500+0.84 EUR
Mindestbestellmenge: 1500 Stücke
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NVTFS6H850NLTAG nvtfs6h850nl-d.pdf
NVTFS6H850NLTAG
Hersteller: onsemi
Description: MOSFET N-CH 80V 14.8A/64A 8WDFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2V @ 70µA
Power Dissipation (Max): 3.9W (Ta), 73W (Tc)
Rds On (Max) @ Id, Vgs: 8.6mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 64A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 9880 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.15 EUR
10+2.01 EUR
100+1.36 EUR
500+1.08 EUR
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NVTFS5C658NLWFTAG nvtfs5c658nl-d.pdf
NVTFS5C658NLWFTAG
Hersteller: onsemi
Description: MOSFET N-CH 60V 109A 8WDFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 109A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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NVTFS5C658NLWFTAG nvtfs5c658nl-d.pdf
NVTFS5C658NLWFTAG
Hersteller: onsemi
Description: MOSFET N-CH 60V 109A 8WDFN
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-WDFN (3.3x3.3)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 109A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
auf Bestellung 366 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
6+3.2 EUR
10+2.22 EUR
100+1.61 EUR
Mindestbestellmenge: 6 Stücke
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NVMJS1D2N04CLTWG nvmjs1d2n04cl-d.pdf
NVMJS1D2N04CLTWG
Hersteller: onsemi
Description: MOSFET N-CH 40V 41A/237A 8LFPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2V @ 170µA
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+1.31 EUR
Mindestbestellmenge: 3000 Stücke
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NVMJS1D2N04CLTWG nvmjs1d2n04cl-d.pdf
NVMJS1D2N04CLTWG
Hersteller: onsemi
Description: MOSFET N-CH 40V 41A/237A 8LFPAK
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-LFPAK
Vgs(th) (Max) @ Id: 2V @ 170µA
Power Dissipation (Max): 3.8W (Ta), 128W (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 237A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
auf Bestellung 32990 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5+4.36 EUR
10+2.82 EUR
100+1.94 EUR
500+1.6 EUR
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LM2904MX description FAIRS29207-1.pdf?t.download=true&u=5oefqw
LM2904MX
Hersteller: onsemi
Description: LM2904-N LOW POWER DUAL OPERATIO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 85°C
Current - Supply: 800µA (x2 Channels)
Gain Bandwidth Product: 1 MHz
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 26 V
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
293+1.55 EUR
Mindestbestellmenge: 293 Stücke
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DF005M DF10M-D.pdf
DF005M
Hersteller: onsemi
Description: BRIDGE RECT 1P 50V 1.5A 4-DIP
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Average Rectified (Io): 1.5 A
Voltage - Peak Reverse (Max): 50 V
Supplier Device Package: 4-DIP
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-EDIP (0.300", 7.62mm)
Packaging: Tube
auf Bestellung 1832 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
13+1.44 EUR
50+0.67 EUR
100+0.59 EUR
500+0.45 EUR
1000+0.41 EUR
Mindestbestellmenge: 13 Stücke
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