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PCGLA200T75NF8 onsemi PCGLA200T75NF8-D.PDF Description: IGBT TRENCH FS 750V 200A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 200A
Supplier Device Package: Wafer
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 257ns/247.5ns
Test Condition: 400V, 200A, 2Ohm, 15V
Gate Charge: 718 nC
Grade: Automotive
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 600 A
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NCV6324CMTAAWTBG NCV6324CMTAAWTBG onsemi ncp6324-d.pdf Description: IC REG BUCK ADJ 2A 8WDFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 3MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 8-WDFNW (2x2)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.6V
Grade: Automotive
Qualification: AEC-Q100
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6000+0.84 EUR
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NCV6324CMTAAWTBG NCV6324CMTAAWTBG onsemi ncp6324-d.pdf Description: IC REG BUCK ADJ 2A 8WDFNW
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 3MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 8-WDFNW (2x2)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.6V
Grade: Automotive
Qualification: AEC-Q100
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10+2.13 EUR
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100+1.41 EUR
250+1.22 EUR
500+1.1 EUR
1000+1.01 EUR
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50C02MH-TL-E 50C02MH-TL-E onsemi 50c02mh-d.pdf Description: TRANS NPN 50V 0.5A 3-MCPH
Packaging: Bulk
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 500MHz
Supplier Device Package: 3-MCPH
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 600 mW
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SPS1M001A-03 onsemi Description: RFID TAG R/W 902-928MHZ INLAY
Packaging: Tape & Reel (TR)
Size / Dimension: 6.469" L x 0.787" W (165.00mm x 20.00mm)
Style: Inlay
Frequency: 902MHz ~ 928MHz
Memory Type: Read/Write
Operating Temperature: -40°C ~ 85°C
Technology: Passive
Standards: ISO 18000-6, EPC
Writable Memory: 128b (EPC)
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N01S830BAT22E N01S830BAT22E onsemi N01S830HA-D.PDF Description: SERIAL SRAM MEMORY, 1 MB, ULTRA-
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: SRAM - Single Port, Synchronous, Standard
Clock Frequency: 16 MHz
Memory Format: SRAM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Memory Interface: SPI - Quad I/O
Access Time: 32 ns
Memory Organization: 128K x 8
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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N01S830BAT22ET N01S830BAT22ET onsemi N01S830HA-D.PDF Description: SERIAL SRAM MEMORY, 1 MB, ULTRA-
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: SRAM - Single Port, Synchronous, Standard
Clock Frequency: 16 MHz
Memory Format: SRAM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Memory Interface: SPI - Quad I/O
Access Time: 32 ns
Memory Organization: 128K x 8
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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N01S830HAT22E N01S830HAT22E onsemi N01S830HA-D.PDF Description: SERIAL SRAM MEMORY, 1 MB, ULTRA-
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: SRAM - Single Port, Synchronous, Standard
Clock Frequency: 16 MHz
Memory Format: SRAM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Memory Interface: SPI - Quad I/O
Access Time: 32 ns
Memory Organization: 128K x 8
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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N01S830HAT22ET N01S830HAT22ET onsemi N01S830HA-D.PDF Description: SERIAL SRAM MEMORY, 1 MB, ULTRA-
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: SRAM - Single Port, Synchronous, Standard
Clock Frequency: 16 MHz
Memory Format: SRAM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Memory Interface: SPI - Quad I/O
Access Time: 32 ns
Memory Organization: 128K x 8
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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74AC14SJ 74AC14SJ onsemi 74ac14-d.pdf Description: IC INVERT SCHMITT 6CH 6IN 14SOP
Features: Schmitt Trigger
Packaging: Tube
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 6
Supplier Device Package: 14-SOP
Input Logic Level - High: 2.2V ~ 3.9V
Input Logic Level - Low: 0.5V ~ 1.1V
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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NTBL048N60S5H onsemi NTBL048N60S5H-D.PDF Description: MOSFET - POWER,NCHANNEL, SUPERFE
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 25A, 10V
Power Dissipation (Max): 297W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5.6mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5277 pF @ 400 V
Produkt ist nicht verfügbar
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74LVTH574MTC 74LVTH574MTC onsemi ONSM-S-A0003546531-1.pdf?t.download=true&u=5oefqw Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Current - Quiescent (Iq): 190 µA
Current - Output High, Low: 32mA, 64mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 4.6ns @ 3.3V, 50pF
Number of Bits per Element: 8
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74LVTH574MTCX 74LVTH574MTCX onsemi ONSM-S-A0003546531-1.pdf?t.download=true&u=5oefqw Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Current - Quiescent (Iq): 190 µA
Current - Output High, Low: 32mA, 64mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 4.6ns @ 3.3V, 50pF
Number of Bits per Element: 8
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SN74LS365AD SN74LS365AD onsemi sn74ls365a Description: IC BUFF NON-INVERT 5.25V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Number of Bits per Element: 6
Current - Output High, Low: 2.6mA, 24mA
Supplier Device Package: 16-SOIC
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UJ3C065080K3S UJ3C065080K3S onsemi uj3c065080k3s-d.pdf Description: MOSFET N-CH 650V 31A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 20A, 12V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
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UF3C065040K4S UF3C065040K4S onsemi DS_UF3C065040K4S.pdf Description: MOSFET N-CH 650V 54A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 12V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
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UF3C065030B3 UF3C065030B3 onsemi uf3c065030b3-d.pdf Description: MOSFET N-CH 650V 65A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 40A, 12V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
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UF3C065030B3 UF3C065030B3 onsemi uf3c065030b3-d.pdf Description: MOSFET N-CH 650V 65A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 40A, 12V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
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UF3C065030T3S UF3C065030T3S onsemi uf3c065030t3s-d.pdf Description: MOSFET N-CH 650V 85A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 12V
Power Dissipation (Max): 441W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
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UJ3C065030K3S UJ3C065030K3S onsemi uj3c065030k3s-d.pdf Description: MOSFET N-CH 650V 85A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 12V
Power Dissipation (Max): 441W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
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UF3C065030K4S UF3C065030K4S onsemi DS_UF3C065030K4S.pdf Description: MOSFET N-CH 650V 85A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 12V
Power Dissipation (Max): 441W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
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UJ3C120040K3S UJ3C120040K3S onsemi uj3c120040k3s-d.pdf Description: SICFET N-CH 1200V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 12V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
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MM74C927N MM74C927N onsemi MM74C925-28.pdf Description: IC DRVR 7 SEGMENT 4 DIGIT 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Display Type: LED
Mounting Type: Through Hole
Interface: BCD
Configuration: 7 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 6V
Digits or Characters: 4 Digits
Supplier Device Package: 18-PDIP
Current - Supply: 20 µA
Produkt ist nicht verfügbar
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NV25080DTVLT3G NV25080DTVLT3G onsemi nv25080lv-d.pdf Description: IC EEPROM 8KBIT SPI 20MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 20 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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NV25080DTVLT3G NV25080DTVLT3G onsemi nv25080lv-d.pdf Description: IC EEPROM 8KBIT SPI 20MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 20 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MC74ACT161DR2G MC74ACT161DR2G onsemi mc74ac161-d.pdf Description: IC BINARY COUNTER 4-BIT 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-SOIC
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 125 MHz
Number of Bits per Element: 4
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1228+0.4 EUR
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NTBL080N60S5H onsemi NTBL080N60S5H-D.PDF Description: MOSFET - POWERNCHANNEL, SUPERFET
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 3.3mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 400 V
Produkt ist nicht verfügbar
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NTMT080N60S5 onsemi NTMT080N60S5-D.PDF Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Bulk
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16.5A, 10V
Power Dissipation (Max): 212W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.4mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3029 pF @ 400 V
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FJH1101 FJH1101 onsemi fjh1101-d.pdf Description: DIODE STANDARD 15V 150MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 15 pA @ 15 V
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MC10EPT20DTG MC10EPT20DTG onsemi mc10ept20-d.pdf Description: IC TRANSLATOR UNIDIR 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-TSSOP
Channel Type: Unidirectional
Output Signal: LVPECL
Translator Type: Mixed Signal
Channels per Circuit: 1
Input Signal: LVCMOS, LVTTL
Number of Circuits: 1
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BZX55C8V2 BZX55C8V2 onsemi BZX55C2V4 - BZX55C56.pdf Description: DIODE ZENER 8.2V 500MW DO35
Tolerance: ±6%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6 V
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MOC3021VM MOC3021VM onsemi moc3023m-d.pdf Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: IEC/EN/DIN, UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 15mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
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MT9P401I12STC-DP onsemi Description: SENSOR IMAGE CMOS 5MP 48LCC
Packaging: Tray
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MT9P401I12STC-DR onsemi Description: SENSOR IMAGE CMOS 5MP 48LCC
Packaging: Tray
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LM7912CT LM7912CT onsemi LM79xx_Rev2011.pdf Description: IC REG LINEAR -12V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): -12V
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
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UJ3N065025K3S UJ3N065025K3S onsemi uj3n065025k3s-d.pdf Description: JFET N-CH 650V 85A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 100V
Voltage - Breakdown (V(BR)GSS): 650 V
Current Drain (Id) - Max: 85 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 650 V
Power - Max: 441 W
Resistance - RDS(On): 33 mOhms
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UJ3C065030T3S UJ3C065030T3S onsemi uj3c065030t3s-d.pdf Description: MOSFET N-CH 650V 85A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 12V
Power Dissipation (Max): 441W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
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MC100EPT21MNR4G MC100EPT21MNR4G onsemi mc100ept21-d.pdf Description: IC TRANSLTR UNIDIRECTIONAL 8DFN
Packaging: Bulk
Package / Case: 8-VFDFN Exposed Pad
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-DFN (2x2)
Channel Type: Unidirectional
Output Signal: LVTTL, LVCMOS
Translator Type: Mixed Signal
Channels per Circuit: 1
Input Signal: CML, LVDS, LVPECL
Number of Circuits: 1
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MC74LVX08DTR2G-Q MC74LVX08DTR2G-Q onsemi mc74lvx08-d.pdf Description: LOG CMOS GATE AND QUAD
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 2.4V
Input Logic Level - Low: 0.5V ~ 0.8V
Max Propagation Delay @ V, Max CL: 10.6ns @ 3.3V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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MC74LVX08DTR2G-Q MC74LVX08DTR2G-Q onsemi mc74lvx08-d.pdf Description: LOG CMOS GATE AND QUAD
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 2.4V
Input Logic Level - Low: 0.5V ~ 0.8V
Max Propagation Delay @ V, Max CL: 10.6ns @ 3.3V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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BDX54C BDX54C onsemi bdx53b-d.pdf description Description: TRANS PNP DARL 100V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 65 W
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1SMA33CAT3G 1SMA33CAT3G onsemi 1SMA_SZ1SMAxxCAT3G_Series_DS.pdf Description: 400 W TRANSIENT VOLTAGE SUPPRESS
Packaging: Bulk
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1SMB33CAT3G 1SMB33CAT3G onsemi 1SMB10CAT3-D.pdf Description: ZEN SMB TVS CLP 600W 33V
Packaging: Tape & Reel (TR)
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ICTE-010 ICTE-010 onsemi Description: DIODE TVS SINGLE UNI-DIR 10V 1.5
Packaging: Bulk
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NCP362CMUTBG NCP362CMUTBG onsemi ncp362-d.pdf Description: IC OCP TVS ESD USB POS 10-UDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.2V ~ 20V
Applications: Overvoltage Protection Controller
Supplier Device Package: 10-UDFN (2.5x2)
Current - Supply: 20 µA
DigiKey Programmable: Not Verified
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NCP362CMUTBG NCP362CMUTBG onsemi ncp362-d.pdf Description: IC OCP TVS ESD USB POS 10-UDFN
Packaging: Bulk
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.2V ~ 20V
Applications: Overvoltage Protection Controller
Supplier Device Package: 10-UDFN (2.5x2)
Current - Supply: 20 µA
DigiKey Programmable: Not Verified
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EMI6316FCTBG onsemi emi6316-d.pdf Description: FILTER RC 40 OHMS/7PF ESD SMD
Packaging: Bulk
Package / Case: 15-XFBGA, WLCSP
Size / Dimension: 0.061" L x 0.061" W (1.55mm x 1.55mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 40Ohms, C = 7pF (Total)
Height: 0.020" (0.50mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC
Resistance - Channel (Ohms): 40
ESD Protection: Yes
Number of Channels: 6
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FGB3245G2-F085C FGB3245G2-F085C onsemi fgd3245g2-f085-d.pdf Description: IGBT 450V 41A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 2.6 µs
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 900ns/5.4µs
Test Condition: 300V, 6.5A, 1kOhm, 5V
Gate Charge: 23 nC
Grade: Automotive
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 150 W
Qualification: AEC-Q101
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FGB3245G2-F085C FGB3245G2-F085C onsemi fgd3245g2-f085-d.pdf Description: IGBT 450V 41A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 2.6 µs
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 900ns/5.4µs
Test Condition: 300V, 6.5A, 1kOhm, 5V
Gate Charge: 23 nC
Grade: Automotive
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 150 W
Qualification: AEC-Q101
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BC857S BC857S onsemi ONSM-S-A0003590618-1.pdf?t.download=true&u=5oefqw Description: TRANS 2PNP 45V 200MA SC-88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SC-88 (SC-70-6)
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BC857S BC857S onsemi ONSM-S-A0003590618-1.pdf?t.download=true&u=5oefqw Description: TRANS 2PNP 45V 200MA SC-88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SC-88 (SC-70-6)
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SI3443DV SI3443DV onsemi si3443dv-d.pdf Description: MOSFET P-CH 20V 4A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
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MC74VHC1GT126MU3TCG MC74VHC1GT126MU3TCG onsemi mc74vhc1g126-d.pdf Description: IC BUFFER NON-INVERT 5.5V 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 6-UDFN (1x1)
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FCP11N60N FCP11N60N onsemi fcpf11n60nt-d.pdf Description: MOSFET N-CH 600V 10.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 5.4A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 100 V
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MC100LVEL33DTG MC100LVEL33DTG onsemi mc100lvel33-d.pdf Description: IC DIVIDER BY 4 1-BIT 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Divide-by-4
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Trigger Type: Positive, Negative
Supplier Device Package: 8-TSSOP
Voltage - Supply: 3 V ~ 3.8 V
Count Rate: 4 GHz
Number of Bits per Element: 2
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NSV30100LT1G NSV30100LT1G onsemi nss30100l-d.pdf Description: TRANS PNP 30V 1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 710 mW
Qualification: AEC-Q101
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NSV30100LT1G NSV30100LT1G onsemi nss30100l-d.pdf Description: TRANS PNP 30V 1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 710 mW
Qualification: AEC-Q101
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16+1.16 EUR
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MT9M413C36STM-DR MT9M413C36STM-DR onsemi MT9M413_DS.pdf Description: SENSOR IMAGE MONO CMOS 280-PGA
Packaging: Tray
Package / Case: 280-PGA
Type: CMOS
Operating Temperature: -5°C ~ 60°C
Voltage - Supply: 3.3V
Pixel Size: 12µm x 12µm
Active Pixel Array: 1280H x 1024V
Supplier Device Package: 280-PGA
Frames per Second: 500.0
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NSVMUN5338DW1T3G NSVMUN5338DW1T3G onsemi mun5338-d.pdf Description: SS SC88 DUAL BRT TRPDBN
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms, 47kOhms
Resistor - Emitter Base (R2): 10kOhms, 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 89990 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
64+0.28 EUR
102+0.17 EUR
500+0.13 EUR
1000+0.11 EUR
2000+0.1 EUR
5000+0.087 EUR
Mindestbestellmenge: 39
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MUN5330DW1T1 MUN5330DW1T1 onsemi MUN5311DW1T1_Series.pdf Description: TRANS BRT DUAL 100MA 50V SOT-363
Packaging: Bulk
auf Bestellung 105000 Stücke:
Lieferzeit 10-14 Tag (e)
5323+0.1 EUR
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PCGLA200T75NF8 PCGLA200T75NF8-D.PDF
Hersteller: onsemi
Description: IGBT TRENCH FS 750V 200A WAFER
Packaging: Bulk
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 200A
Supplier Device Package: Wafer
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 257ns/247.5ns
Test Condition: 400V, 200A, 2Ohm, 15V
Gate Charge: 718 nC
Grade: Automotive
Current - Collector (Ic) (Max): 200 A
Voltage - Collector Emitter Breakdown (Max): 750 V
Current - Collector Pulsed (Icm): 600 A
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NCV6324CMTAAWTBG ncp6324-d.pdf
NCV6324CMTAAWTBG
Hersteller: onsemi
Description: IC REG BUCK ADJ 2A 8WDFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-WFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 3MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 8-WDFNW (2x2)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.6V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.89 EUR
6000+0.84 EUR
Mindestbestellmenge: 3000
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NCV6324CMTAAWTBG ncp6324-d.pdf
NCV6324CMTAAWTBG
Hersteller: onsemi
Description: IC REG BUCK ADJ 2A 8WDFNW
Packaging: Cut Tape (CT)
Package / Case: 8-WFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount, Wettable Flank
Number of Outputs: 1
Function: Step-Down
Current - Output: 2A
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive
Frequency - Switching: 3MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 8-WDFNW (2x2)
Synchronous Rectifier: Yes
Voltage - Output (Max): 5.5V
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 0.6V
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 20495 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.41 EUR
10+2.13 EUR
25+1.79 EUR
100+1.41 EUR
250+1.22 EUR
500+1.1 EUR
1000+1.01 EUR
Mindestbestellmenge: 6
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50C02MH-TL-E 50c02mh-d.pdf
50C02MH-TL-E
Hersteller: onsemi
Description: TRANS NPN 50V 0.5A 3-MCPH
Packaging: Bulk
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 100mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 500MHz
Supplier Device Package: 3-MCPH
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 600 mW
auf Bestellung 178450 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3109+0.17 EUR
Mindestbestellmenge: 3109
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SPS1M001A-03
Hersteller: onsemi
Description: RFID TAG R/W 902-928MHZ INLAY
Packaging: Tape & Reel (TR)
Size / Dimension: 6.469" L x 0.787" W (165.00mm x 20.00mm)
Style: Inlay
Frequency: 902MHz ~ 928MHz
Memory Type: Read/Write
Operating Temperature: -40°C ~ 85°C
Technology: Passive
Standards: ISO 18000-6, EPC
Writable Memory: 128b (EPC)
auf Bestellung 94765 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
60+15.75 EUR
Mindestbestellmenge: 60
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N01S830BAT22E N01S830HA-D.PDF
N01S830BAT22E
Hersteller: onsemi
Description: SERIAL SRAM MEMORY, 1 MB, ULTRA-
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: SRAM - Single Port, Synchronous, Standard
Clock Frequency: 16 MHz
Memory Format: SRAM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Memory Interface: SPI - Quad I/O
Access Time: 32 ns
Memory Organization: 128K x 8
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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N01S830BAT22ET N01S830HA-D.PDF
N01S830BAT22ET
Hersteller: onsemi
Description: SERIAL SRAM MEMORY, 1 MB, ULTRA-
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: SRAM - Single Port, Synchronous, Standard
Clock Frequency: 16 MHz
Memory Format: SRAM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Memory Interface: SPI - Quad I/O
Access Time: 32 ns
Memory Organization: 128K x 8
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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N01S830HAT22E N01S830HA-D.PDF
N01S830HAT22E
Hersteller: onsemi
Description: SERIAL SRAM MEMORY, 1 MB, ULTRA-
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: SRAM - Single Port, Synchronous, Standard
Clock Frequency: 16 MHz
Memory Format: SRAM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Memory Interface: SPI - Quad I/O
Access Time: 32 ns
Memory Organization: 128K x 8
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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N01S830HAT22ET N01S830HA-D.PDF
N01S830HAT22ET
Hersteller: onsemi
Description: SERIAL SRAM MEMORY, 1 MB, ULTRA-
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: SRAM - Single Port, Synchronous, Standard
Clock Frequency: 16 MHz
Memory Format: SRAM
Supplier Device Package: 8-TSSOP
Grade: Automotive
Memory Interface: SPI - Quad I/O
Access Time: 32 ns
Memory Organization: 128K x 8
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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74AC14SJ 74ac14-d.pdf
74AC14SJ
Hersteller: onsemi
Description: IC INVERT SCHMITT 6CH 6IN 14SOP
Features: Schmitt Trigger
Packaging: Tube
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 6
Supplier Device Package: 14-SOP
Input Logic Level - High: 2.2V ~ 3.9V
Input Logic Level - Low: 0.5V ~ 1.1V
Max Propagation Delay @ V, Max CL: 10ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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NTBL048N60S5H NTBL048N60S5H-D.PDF
Hersteller: onsemi
Description: MOSFET - POWER,NCHANNEL, SUPERFE
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 25A, 10V
Power Dissipation (Max): 297W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5.6mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5277 pF @ 400 V
Produkt ist nicht verfügbar
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74LVTH574MTC ONSM-S-A0003546531-1.pdf?t.download=true&u=5oefqw
74LVTH574MTC
Hersteller: onsemi
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Current - Quiescent (Iq): 190 µA
Current - Output High, Low: 32mA, 64mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 4.6ns @ 3.3V, 50pF
Number of Bits per Element: 8
auf Bestellung 18169 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
617+0.83 EUR
Mindestbestellmenge: 617
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74LVTH574MTCX ONSM-S-A0003546531-1.pdf?t.download=true&u=5oefqw
74LVTH574MTCX
Hersteller: onsemi
Description: IC FF D-TYPE SNGL 8BIT 20TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Current - Quiescent (Iq): 190 µA
Current - Output High, Low: 32mA, 64mA
Trigger Type: Positive Edge
Clock Frequency: 150 MHz
Input Capacitance: 4 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 4.6ns @ 3.3V, 50pF
Number of Bits per Element: 8
auf Bestellung 880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
337+1.5 EUR
Mindestbestellmenge: 337
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SN74LS365AD sn74ls365a
SN74LS365AD
Hersteller: onsemi
Description: IC BUFF NON-INVERT 5.25V 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.75V ~ 5.25V
Number of Bits per Element: 6
Current - Output High, Low: 2.6mA, 24mA
Supplier Device Package: 16-SOIC
auf Bestellung 13269 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
303+1.67 EUR
Mindestbestellmenge: 303
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UJ3C065080K3S uj3c065080k3s-d.pdf
UJ3C065080K3S
Hersteller: onsemi
Description: MOSFET N-CH 650V 31A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Rds On (Max) @ Id, Vgs: 111mOhm @ 20A, 12V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 1146 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.05 EUR
30+8.86 EUR
120+8.77 EUR
Mindestbestellmenge: 2
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UF3C065040K4S DS_UF3C065040K4S.pdf
UF3C065040K4S
Hersteller: onsemi
Description: MOSFET N-CH 650V 54A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 40A, 12V
Power Dissipation (Max): 326W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 6578 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+20.98 EUR
30+17.2 EUR
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UF3C065030B3 uf3c065030b3-d.pdf
UF3C065030B3
Hersteller: onsemi
Description: MOSFET N-CH 650V 65A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 40A, 12V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+22.67 EUR
Mindestbestellmenge: 800
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UF3C065030B3 uf3c065030b3-d.pdf
UF3C065030B3
Hersteller: onsemi
Description: MOSFET N-CH 650V 65A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 40A, 12V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 2885 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+23.46 EUR
10+22.68 EUR
100+22.67 EUR
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UF3C065030T3S uf3c065030t3s-d.pdf
UF3C065030T3S
Hersteller: onsemi
Description: MOSFET N-CH 650V 85A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 12V
Power Dissipation (Max): 441W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 2672 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.25 EUR
50+23.12 EUR
100+23.11 EUR
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UJ3C065030K3S uj3c065030k3s-d.pdf
UJ3C065030K3S
Hersteller: onsemi
Description: MOSFET N-CH 650V 85A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 12V
Power Dissipation (Max): 441W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 4057 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.42 EUR
30+23.33 EUR
120+23.26 EUR
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UF3C065030K4S DS_UF3C065030K4S.pdf
UF3C065030K4S
Hersteller: onsemi
Description: MOSFET N-CH 650V 85A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 12V
Power Dissipation (Max): 441W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 1284 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.76 EUR
30+23.07 EUR
120+18.2 EUR
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UJ3C120040K3S uj3c120040k3s-d.pdf
UJ3C120040K3S
Hersteller: onsemi
Description: SICFET N-CH 1200V 65A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 40A, 12V
Power Dissipation (Max): 429W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 999 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+55.62 EUR
30+36.65 EUR
120+36.22 EUR
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MM74C927N MM74C925-28.pdf
MM74C927N
Hersteller: onsemi
Description: IC DRVR 7 SEGMENT 4 DIGIT 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Display Type: LED
Mounting Type: Through Hole
Interface: BCD
Configuration: 7 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 6V
Digits or Characters: 4 Digits
Supplier Device Package: 18-PDIP
Current - Supply: 20 µA
Produkt ist nicht verfügbar
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NV25080DTVLT3G nv25080lv-d.pdf
NV25080DTVLT3G
Hersteller: onsemi
Description: IC EEPROM 8KBIT SPI 20MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 20 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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NV25080DTVLT3G nv25080lv-d.pdf
NV25080DTVLT3G
Hersteller: onsemi
Description: IC EEPROM 8KBIT SPI 20MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 20 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 4ms
Memory Interface: SPI
Access Time: 20 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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MC74ACT161DR2G mc74ac161-d.pdf
MC74ACT161DR2G
Hersteller: onsemi
Description: IC BINARY COUNTER 4-BIT 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Positive Edge
Timing: Synchronous
Supplier Device Package: 16-SOIC
Voltage - Supply: 4.5 V ~ 5.5 V
Count Rate: 125 MHz
Number of Bits per Element: 4
auf Bestellung 18654 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1228+0.4 EUR
Mindestbestellmenge: 1228
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NTBL080N60S5H NTBL080N60S5H-D.PDF
Hersteller: onsemi
Description: MOSFET - POWERNCHANNEL, SUPERFET
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 3.3mA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3127 pF @ 400 V
Produkt ist nicht verfügbar
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NTMT080N60S5 NTMT080N60S5-D.PDF
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, SUPERFE
Packaging: Bulk
Package / Case: 4-PowerTSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 16.5A, 10V
Power Dissipation (Max): 212W (Tc)
Vgs(th) (Max) @ Id: 4V @ 3.4mA
Supplier Device Package: 4-TDFN (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3029 pF @ 400 V
Produkt ist nicht verfügbar
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FJH1101 fjh1101-d.pdf
FJH1101
Hersteller: onsemi
Description: DIODE STANDARD 15V 150MA DO35
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 15 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 50 mA
Current - Reverse Leakage @ Vr: 15 pA @ 15 V
auf Bestellung 3737 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.04 EUR
10+19.87 EUR
100+15.26 EUR
500+15.04 EUR
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MC10EPT20DTG mc10ept20-d.pdf
MC10EPT20DTG
Hersteller: onsemi
Description: IC TRANSLATOR UNIDIR 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-TSSOP
Channel Type: Unidirectional
Output Signal: LVPECL
Translator Type: Mixed Signal
Channels per Circuit: 1
Input Signal: LVCMOS, LVTTL
Number of Circuits: 1
auf Bestellung 18232 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+13.07 EUR
Mindestbestellmenge: 39
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BZX55C8V2 BZX55C2V4 - BZX55C56.pdf
BZX55C8V2
Hersteller: onsemi
Description: DIODE ZENER 8.2V 500MW DO35
Tolerance: ±6%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6 V
Produkt ist nicht verfügbar
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MOC3021VM moc3023m-d.pdf
MOC3021VM
Hersteller: onsemi
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: IEC/EN/DIN, UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 15mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 331 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.21 EUR
21+0.85 EUR
100+0.62 EUR
Mindestbestellmenge: 15
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MT9P401I12STC-DP
Hersteller: onsemi
Description: SENSOR IMAGE CMOS 5MP 48LCC
Packaging: Tray
Produkt ist nicht verfügbar
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MT9P401I12STC-DR
Hersteller: onsemi
Description: SENSOR IMAGE CMOS 5MP 48LCC
Packaging: Tray
Produkt ist nicht verfügbar
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LM7912CT LM79xx_Rev2011.pdf
LM7912CT
Hersteller: onsemi
Description: IC REG LINEAR -12V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): -12V
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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UJ3N065025K3S uj3n065025k3s-d.pdf
UJ3N065025K3S
Hersteller: onsemi
Description: JFET N-CH 650V 85A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 100V
Voltage - Breakdown (V(BR)GSS): 650 V
Current Drain (Id) - Max: 85 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 650 V
Power - Max: 441 W
Resistance - RDS(On): 33 mOhms
auf Bestellung 1301 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+36.24 EUR
30+24.99 EUR
120+23.26 EUR
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UJ3C065030T3S uj3c065030t3s-d.pdf
UJ3C065030T3S
Hersteller: onsemi
Description: MOSFET N-CH 650V 85A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 50A, 12V
Power Dissipation (Max): 441W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 1374 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+36.04 EUR
50+27.48 EUR
100+27.46 EUR
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MC100EPT21MNR4G mc100ept21-d.pdf
MC100EPT21MNR4G
Hersteller: onsemi
Description: IC TRANSLTR UNIDIRECTIONAL 8DFN
Packaging: Bulk
Package / Case: 8-VFDFN Exposed Pad
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-DFN (2x2)
Channel Type: Unidirectional
Output Signal: LVTTL, LVCMOS
Translator Type: Mixed Signal
Channels per Circuit: 1
Input Signal: CML, LVDS, LVPECL
Number of Circuits: 1
auf Bestellung 5509 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+15.54 EUR
Mindestbestellmenge: 33
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MC74LVX08DTR2G-Q mc74lvx08-d.pdf
MC74LVX08DTR2G-Q
Hersteller: onsemi
Description: LOG CMOS GATE AND QUAD
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 2.4V
Input Logic Level - Low: 0.5V ~ 0.8V
Max Propagation Delay @ V, Max CL: 10.6ns @ 3.3V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.23 EUR
Mindestbestellmenge: 2500
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MC74LVX08DTR2G-Q mc74lvx08-d.pdf
MC74LVX08DTR2G-Q
Hersteller: onsemi
Description: LOG CMOS GATE AND QUAD
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V ~ 2.4V
Input Logic Level - Low: 0.5V ~ 0.8V
Max Propagation Delay @ V, Max CL: 10.6ns @ 3.3V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.32 EUR
23+0.78 EUR
28+0.65 EUR
100+0.49 EUR
250+0.42 EUR
500+0.37 EUR
1000+0.33 EUR
Mindestbestellmenge: 14
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BDX54C description bdx53b-d.pdf
BDX54C
Hersteller: onsemi
Description: TRANS PNP DARL 100V 8A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 12mA, 3A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 65 W
Produkt ist nicht verfügbar
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1SMA33CAT3G 1SMA_SZ1SMAxxCAT3G_Series_DS.pdf
1SMA33CAT3G
Hersteller: onsemi
Description: 400 W TRANSIENT VOLTAGE SUPPRESS
Packaging: Bulk
auf Bestellung 66809 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1110+0.45 EUR
Mindestbestellmenge: 1110
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1SMB33CAT3G 1SMB10CAT3-D.pdf
1SMB33CAT3G
Hersteller: onsemi
Description: ZEN SMB TVS CLP 600W 33V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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ICTE-010
ICTE-010
Hersteller: onsemi
Description: DIODE TVS SINGLE UNI-DIR 10V 1.5
Packaging: Bulk
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
807+0.62 EUR
Mindestbestellmenge: 807
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NCP362CMUTBG ncp362-d.pdf
NCP362CMUTBG
Hersteller: onsemi
Description: IC OCP TVS ESD USB POS 10-UDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.2V ~ 20V
Applications: Overvoltage Protection Controller
Supplier Device Package: 10-UDFN (2.5x2)
Current - Supply: 20 µA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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NCP362CMUTBG ncp362-d.pdf
NCP362CMUTBG
Hersteller: onsemi
Description: IC OCP TVS ESD USB POS 10-UDFN
Packaging: Bulk
Package / Case: 10-UFDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.2V ~ 20V
Applications: Overvoltage Protection Controller
Supplier Device Package: 10-UDFN (2.5x2)
Current - Supply: 20 µA
DigiKey Programmable: Not Verified
auf Bestellung 1300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
567+0.89 EUR
Mindestbestellmenge: 567
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EMI6316FCTBG emi6316-d.pdf
Hersteller: onsemi
Description: FILTER RC 40 OHMS/7PF ESD SMD
Packaging: Bulk
Package / Case: 15-XFBGA, WLCSP
Size / Dimension: 0.061" L x 0.061" W (1.55mm x 1.55mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 40Ohms, C = 7pF (Total)
Height: 0.020" (0.50mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC
Resistance - Channel (Ohms): 40
ESD Protection: Yes
Number of Channels: 6
auf Bestellung 360000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1095+0.45 EUR
Mindestbestellmenge: 1095
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FGB3245G2-F085C fgd3245g2-f085-d.pdf
FGB3245G2-F085C
Hersteller: onsemi
Description: IGBT 450V 41A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 2.6 µs
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 900ns/5.4µs
Test Condition: 300V, 6.5A, 1kOhm, 5V
Gate Charge: 23 nC
Grade: Automotive
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 150 W
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.25 EUR
1600+2.13 EUR
Mindestbestellmenge: 800
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FGB3245G2-F085C fgd3245g2-f085-d.pdf
FGB3245G2-F085C
Hersteller: onsemi
Description: IGBT 450V 41A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Reverse Recovery Time (trr): 2.6 µs
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 900ns/5.4µs
Test Condition: 300V, 6.5A, 1kOhm, 5V
Gate Charge: 23 nC
Grade: Automotive
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 150 W
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.58 EUR
Mindestbestellmenge: 3
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BC857S ONSM-S-A0003590618-1.pdf?t.download=true&u=5oefqw
BC857S
Hersteller: onsemi
Description: TRANS 2PNP 45V 200MA SC-88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SC-88 (SC-70-6)
Produkt ist nicht verfügbar
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BC857S ONSM-S-A0003590618-1.pdf?t.download=true&u=5oefqw
BC857S
Hersteller: onsemi
Description: TRANS 2PNP 45V 200MA SC-88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SC-88 (SC-70-6)
Produkt ist nicht verfügbar
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SI3443DV si3443dv-d.pdf
SI3443DV
Hersteller: onsemi
Description: MOSFET P-CH 20V 4A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4A, 4.5V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 10 V
Produkt ist nicht verfügbar
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MC74VHC1GT126MU3TCG mc74vhc1g126-d.pdf
MC74VHC1GT126MU3TCG
Hersteller: onsemi
Description: IC BUFFER NON-INVERT 5.5V 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 6-UDFN (1x1)
auf Bestellung 227699 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
36+0.49 EUR
44+0.4 EUR
100+0.3 EUR
250+0.25 EUR
500+0.22 EUR
1000+0.2 EUR
Mindestbestellmenge: 21
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FCP11N60N fcpf11n60nt-d.pdf
FCP11N60N
Hersteller: onsemi
Description: MOSFET N-CH 600V 10.8A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 5.4A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 100 V
Produkt ist nicht verfügbar
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MC100LVEL33DTG mc100lvel33-d.pdf
MC100LVEL33DTG
Hersteller: onsemi
Description: IC DIVIDER BY 4 1-BIT 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Divide-by-4
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Trigger Type: Positive, Negative
Supplier Device Package: 8-TSSOP
Voltage - Supply: 3 V ~ 3.8 V
Count Rate: 4 GHz
Number of Bits per Element: 2
auf Bestellung 27804 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
37+13.87 EUR
Mindestbestellmenge: 37
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NSV30100LT1G nss30100l-d.pdf
NSV30100LT1G
Hersteller: onsemi
Description: TRANS PNP 30V 1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 710 mW
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.27 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
NSV30100LT1G nss30100l-d.pdf
NSV30100LT1G
Hersteller: onsemi
Description: TRANS PNP 30V 1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 710 mW
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
Mindestbestellmenge: 16
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MT9M413C36STM-DR MT9M413_DS.pdf
MT9M413C36STM-DR
Hersteller: onsemi
Description: SENSOR IMAGE MONO CMOS 280-PGA
Packaging: Tray
Package / Case: 280-PGA
Type: CMOS
Operating Temperature: -5°C ~ 60°C
Voltage - Supply: 3.3V
Pixel Size: 12µm x 12µm
Active Pixel Array: 1280H x 1024V
Supplier Device Package: 280-PGA
Frames per Second: 500.0
Produkt ist nicht verfügbar
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NSVMUN5338DW1T3G mun5338-d.pdf
NSVMUN5338DW1T3G
Hersteller: onsemi
Description: SS SC88 DUAL BRT TRPDBN
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms, 47kOhms
Resistor - Emitter Base (R2): 10kOhms, 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 89990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
64+0.28 EUR
102+0.17 EUR
500+0.13 EUR
1000+0.11 EUR
2000+0.1 EUR
5000+0.087 EUR
Mindestbestellmenge: 39
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MUN5330DW1T1 MUN5311DW1T1_Series.pdf
MUN5330DW1T1
Hersteller: onsemi
Description: TRANS BRT DUAL 100MA 50V SOT-363
Packaging: Bulk
auf Bestellung 105000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5323+0.1 EUR
Mindestbestellmenge: 5323
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