FDC6322C Fairchild Semiconductor

Description: MOSFET N/P-CH 25V 0.22A SSOT6, Current - Continuous Drain (Id) @ 25°C: 220mA, 460mA, Drain to Source Voltage (Vdss): 25V, Power - Max: 700mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Supplier Device Package: SuperSOT™-6, Vgs(th) (Max) @ Id: 1.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V, Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V.