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MR754 MR754 onsemi mr750-d.pdf Description: DIODE STD 400V 6A MICRODE BUTTON
Packaging: Bulk
Package / Case: Button, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Microde Button
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
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2SC3150M 2SC3150M onsemi ONSMS23400-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 800V 3A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 50 W
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GBPC2501 GBPC2501 onsemi gbpc3510-d.pdf Description: BRIDGE RECT 1PHASE 100V 25A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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1N5340B 1N5340B onsemi 1n5333b-d.pdf Description: DIODE ZENER 6V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Produkt ist nicht verfügbar
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SMUN5111T1 SMUN5111T1 onsemi ONSM-S-A0005578147-1.pdf?t.download=true&u=5oefqw Description: TRANS PREBIAS PNP SC70-3
Packaging: Bulk
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MMBT5551 MMBT5551 onsemi 2N5551%2CMMBT5551.pdf Description: TRANS NPN 160V 0.6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
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MMBT5551 MMBT5551 onsemi 2N5551%2CMMBT5551.pdf Description: TRANS NPN 160V 0.6A SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 350 mW
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FFPF20U60DNTU FFPF20U60DNTU onsemi FFPF20U60DN.pdf Description: DIODE ARR AVAL 600V 20A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MMBZ5257ELT1G MMBZ5257ELT1G onsemi mmbz5221elt1-d.pdf Description: DIODE ZENER 33V 225MW SOT23-3
Tolerance: ±5%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
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SZMMBZ5257ELT1G SZMMBZ5257ELT1G onsemi mmbz5221elt1-d.pdf Description: DIODE ZENER 33V 225MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Qualification: AEC-Q101
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6000+0.075 EUR
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15000+0.059 EUR
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SZMMBZ5257ELT1G SZMMBZ5257ELT1G onsemi mmbz5221elt1-d.pdf Description: DIODE ZENER 33V 225MW SOT23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Qualification: AEC-Q101
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SZMMBZ5257ELT1G SZMMBZ5257ELT1G onsemi mmbz5221elt1-d.pdf Description: DIODE ZENER 33V 225MW SOT23-3
Tolerance: ±5%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Qualification: AEC-Q101
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MMBZ5257B MMBZ5257B onsemi MMBZ5221B-5257B.pdf Description: DIODE ZENER 33V 350MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Produkt ist nicht verfügbar
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MMBZ5257B MMBZ5257B onsemi MMBZ5221B-5257B.pdf Description: DIODE ZENER 33V 350MW SOT23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Produkt ist nicht verfügbar
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TIP33AG onsemi TIP33C-D.PDF Description: TRANS NPN 60V 10A SOT-93
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 2.5A, 10A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: SOT-93
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 80 W
Produkt ist nicht verfügbar
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AR0330CM1C12SHAA0-DP AR0330CM1C12SHAA0-DP onsemi AR0330CM_Rev18_Mar2017.pdf Description: IMAGE SENSOR MONO CMOS 48-ILCC
Packaging: Bulk
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1536V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
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AR0330SR1C00SUKA0-CR onsemi ar0330?pdf=Y Description: IMAGE SENSOR MONO CMOS 48-ILCC
Packaging: Bulk
Package / Case: 64-VFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2048H x 1536V
Supplier Device Package: 64-CSP (6.28x6.65)
Frames per Second: 30.0
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AR0330SR1C00SUKA0-CR onsemi ar0330?pdf=Y Description: IMAGE SENSOR MONO CMOS 48-ILCC
Packaging: Tray
Package / Case: 64-VFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2048H x 1536V
Supplier Device Package: 64-CSP (6.28x6.65)
Frames per Second: 30.0
Produkt ist nicht verfügbar
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AR0330CM1C00SHAA0-DR AR0330CM1C00SHAA0-DR onsemi AR0330CM_Rev18_Mar2017.pdf Description: IMAGE SENSOR MONO CMOS
Packaging: Bulk
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1536V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
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AR0330CM1C12SHAA0-DR1 onsemi AR0330CM_Rev18_Mar2017.pdf Description: IMAGE SENSOR 3MP 1/3 CIS
Packaging: Bulk
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1296V
Frames per Second: 60.0
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24+20.01 EUR
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AR0330CM1C12SHAA0-DR1 onsemi AR0330CM_Rev18_Mar2017.pdf Description: IMAGE SENSOR 3MP 1/3 CIS
Packaging: Tray
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1296V
Frames per Second: 60.0
Produkt ist nicht verfügbar
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AR0330CM1C00SHAA0-DP AR0330CM1C00SHAA0-DP onsemi AR0330CM_Rev18_Mar2017.pdf Description: IMAGE SENSOR MONO CMOS
Packaging: Bulk
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1536V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
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AR0330CM1C00SHAA0-DP AR0330CM1C00SHAA0-DP onsemi AR0330CM_Rev18_Mar2017.pdf Description: IMAGE SENSOR MONO CMOS
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1536V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
Produkt ist nicht verfügbar
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AR0330CM1C00SHAA0-DR1 AR0330CM1C00SHAA0-DR1 onsemi AR0330CM_Rev18_Mar2017.pdf Description: IMAGE SENSOR 3MP 1/3 CIS
Packaging: Bulk
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1296V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
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AR0330CM1C00SHAA0-DR1 AR0330CM1C00SHAA0-DR1 onsemi AR0330CM_Rev18_Mar2017.pdf Description: IMAGE SENSOR 3MP 1/3 CIS
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1296V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
Produkt ist nicht verfügbar
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FQPF5N50CFTU FQPF5N50CFTU onsemi FQPF5N50CF.pdf Description: MOSFET N-CH 500V 5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 2.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Produkt ist nicht verfügbar
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2N6505TG 2N6505TG onsemi ONSMS14589-1.pdf?t.download=true&u=5oefqw Description: SCR 100V 25A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A @ 60Hz
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.8 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 100 V
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7WBD383AMX1TCG 7WBD383AMX1TCG onsemi 7wbd383-d.pdf Description: IC BUS FET EXCH SW 2X1:1 8-ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus FET Exchange Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 8-ULLGA (1.95x1)
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7WBD383CMX1TCG 7WBD383CMX1TCG onsemi 7wbd383-d.pdf Description: IC BUS FET EXCH SW 2X1:1 8-ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus FET Exchange Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 8-ULLGA (1.45x1)
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7WBD383BMX1TCG 7WBD383BMX1TCG onsemi 7wbd383-d.pdf Description: IC BUS FET EXCH SW 2X1:1 8-ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus FET Exchange Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 8-ULLGA (1.6x1)
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7WBD383MUTAG 7WBD383MUTAG onsemi 7wbd383-d.pdf Description: IC BUS FET EXCH SW 2X1:1 8-UDFN
Packaging: Bulk
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus FET Exchange Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 8-UDFN (1.8x1.2)
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892+0.53 EUR
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7WBD383AMUTCG 7WBD383AMUTCG onsemi 7wbd383-d.pdf Description: IC BUS FET EXCH SW 2X1:1 8-UQFN
Packaging: Bulk
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus FET Exchange Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 8-UQFN (1.6x1.6)
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892+0.53 EUR
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FCH104N60 FCH104N60 onsemi FCH104N60-D.PDF Description: MOSFET N-CH 600V 37A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 18.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 380 V
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HBL1025T1G HBL1025T1G onsemi HBL1015%2C1025.pdf Description: LGHT PROTECT LED SHUNT 11.5V SMD
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Voltage: 11.5V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: 5-TSOP
Number of Circuits: 1
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HBL1025T1G HBL1025T1G onsemi HBL1015%2C1025.pdf Description: LGHT PROTECT LED SHUNT 11.5V SMD
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Voltage: 11.5V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: 5-TSOP
Number of Circuits: 1
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HBL1015T1G HBL1015T1G onsemi HBL1015%2C1025.pdf Description: LIGHT PROTECT LED SHUNT 8V SMD
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Voltage: 8V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: 5-TSOP
Number of Circuits: 1
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MUR120 MUR120 onsemi mur120-d.pdf Description: DIODE STANDARD 200V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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N24C256X-1CBT5G N24C256X-1CBT5G onsemi n24c256x-d.pdf Description: 256 KB I2C CMOS SERIAL EEPROM WI
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (1x1)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 32K x 8
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N24C256X-1CBT5G N24C256X-1CBT5G onsemi n24c256x-d.pdf Description: 256 KB I2C CMOS SERIAL EEPROM WI
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (1x1)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 32K x 8
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FSFR1700HS FSFR1700HS onsemi FAIRS34195-1.pdf?t.download=true&u=5oefqw Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 600kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Power (Watts): 200 W
Produkt ist nicht verfügbar
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FSFR1700HSL FSFR1700HSL onsemi FAIRS34195-1.pdf?t.download=true&u=5oefqw Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 600kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP (L forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Power (Watts): 200 W
Produkt ist nicht verfügbar
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FSFR1700 FSFR1700 onsemi FAIRS29359-1.pdf?t.download=true&u=5oefqw Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 11.3V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 14.5 V
Control Features: EN, Frequency Control
Power (Watts): 200 W
Produkt ist nicht verfügbar
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FSFR1700US FSFR1700US onsemi FSFR-US_Series.pdf Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SSIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Power (Watts): 200 W
Produkt ist nicht verfügbar
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FSFR1700USL FSFR1700USL onsemi FSFR-US_Series.pdf Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP (L forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Power (Watts): 200 W
Produkt ist nicht verfügbar
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FCH125N60E FCH125N60E onsemi fch125n60e-d.pdf Description: MOSFET N-CH 600V 29A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 380 V
Produkt ist nicht verfügbar
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DM74AS30MX DM74AS30MX onsemi DM74AS30.pdf Description: IC GATE NAND 1CH 8-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 2mA, 20mA
Number of Inputs: 8
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 5ns @ 5V, 50pF
Number of Circuits: 1
Produkt ist nicht verfügbar
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MT9P031I12STM-DR1 MT9P031I12STM-DR1 onsemi mt9p031-d.pdf Description: SENSOR IMAGE 5MP MONO CMOS 48LCC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.9V, 2.6V ~ 3.1V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 53.0
Produkt ist nicht verfügbar
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2N3702 2N3702 onsemi 2N3702.pdf Description: TRANS PNP 25V 0.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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NXH25C120L2C2SG NXH25C120L2C2SG onsemi Description: IGBT MODULE, CIB 1200 V, 25 A IG
Packaging: Bulk
Package / Case: 26-PowerDIP Module (1.199", 47.20mm)
Mounting Type: Through Hole
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: 26-DIP
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 20 V
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MOC3043SM MOC3043SM onsemi MOC3043M-D.PDF Description: OPTOISOLTR 4.17KV TRIAC 1CH 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 400µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
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NLX1G11AMUTCG NLX1G11AMUTCG onsemi NLX1G11.pdf Description: IC GATE AND 1CH 3-INP 6UDFN
Packaging: Bulk
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: 6-UDFN (1.45x1)
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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NLVX1G11AMUTCG onsemi Description: IC GATE AND 1CH 3-INP 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: 6-UDFN (1.45x1)
Input Logic Level - Low: 0.1V ~ 0.55V
Max Propagation Delay @ V, Max CL: 7ns @ 5.5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
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NLVX1G11AMUTCG onsemi Description: IC GATE AND 1CH 3-INP 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: 6-UDFN (1.45x1)
Input Logic Level - Low: 0.1V ~ 0.55V
Max Propagation Delay @ V, Max CL: 7ns @ 5.5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
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NLSX5011AMUTCG NLSX5011AMUTCG onsemi nlsx5011-d.pdf Description: IC TRANSLTR BIDIRECTIONAL 6UDFN
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Bulk
Package / Case: 6-UFDFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 6-UDFN (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
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NLSX5011AMUTBG NLSX5011AMUTBG onsemi nlsx5011-d.pdf Description: IC TRANSLTR BIDIRECTIONAL 6UDFN
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 6-UDFN (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
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NLSX5011AMUTBG NLSX5011AMUTBG onsemi nlsx5011-d.pdf Description: IC TRANSLTR BIDIRECTIONAL 6UDFN
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 6-UDFN (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
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MC7908CD2TR4G MC7908CD2TR4G onsemi mc7900-d.pdf Description: IC REG LINEAR -8V 1A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: D2PAK-3
Voltage - Output (Min/Fixed): -8V
PSRR: 62dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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TF202THC-4-TL-H TF202THC-4-TL-H onsemi Description: JFET N-CH 1MA 3VTFP
Packaging: Bulk
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: 3-VTFP
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 140 µA @ 5 V
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CAT24C08YI-G CAT24C08YI-G onsemi cat24c01-d.pdf Description: IC EEPROM 8KBIT I2C 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
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CAT24C08YI-G CAT24C08YI-G onsemi cat24c01-d.pdf Description: IC EEPROM 8KBIT I2C 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
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MR754 mr750-d.pdf
MR754
Hersteller: onsemi
Description: DIODE STD 400V 6A MICRODE BUTTON
Packaging: Bulk
Package / Case: Button, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: Microde Button
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Produkt ist nicht verfügbar
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2SC3150M ONSMS23400-1.pdf?t.download=true&u=5oefqw
2SC3150M
Hersteller: onsemi
Description: TRANS NPN 800V 3A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 1.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
Frequency - Transition: 15MHz
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 800 V
Power - Max: 50 W
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505+0.89 EUR
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GBPC2501 gbpc3510-d.pdf
GBPC2501
Hersteller: onsemi
Description: BRIDGE RECT 1PHASE 100V 25A GBPC
Packaging: Bulk
Package / Case: 4-Square, GBPC
Mounting Type: QC Terminal
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 7.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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Anzahl Preis
2+11.28 EUR
50+6.08 EUR
100+5.58 EUR
Mindestbestellmenge: 2
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1N5340B 1n5333b-d.pdf
1N5340B
Hersteller: onsemi
Description: DIODE ZENER 6V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 6 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Produkt ist nicht verfügbar
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SMUN5111T1 ONSM-S-A0005578147-1.pdf?t.download=true&u=5oefqw
SMUN5111T1
Hersteller: onsemi
Description: TRANS PREBIAS PNP SC70-3
Packaging: Bulk
auf Bestellung 102000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3122+0.16 EUR
Mindestbestellmenge: 3122
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MMBT5551 2N5551%2CMMBT5551.pdf
MMBT5551
Hersteller: onsemi
Description: TRANS NPN 160V 0.6A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
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MMBT5551 2N5551%2CMMBT5551.pdf
MMBT5551
Hersteller: onsemi
Description: TRANS NPN 160V 0.6A SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 350 mW
auf Bestellung 398408 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5769+0.076 EUR
Mindestbestellmenge: 5769
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FFPF20U60DNTU FFPF20U60DN.pdf
FFPF20U60DNTU
Hersteller: onsemi
Description: DIODE ARR AVAL 600V 20A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220F-3
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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MMBZ5257ELT1G mmbz5221elt1-d.pdf
MMBZ5257ELT1G
Hersteller: onsemi
Description: DIODE ZENER 33V 225MW SOT23-3
Tolerance: ±5%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
auf Bestellung 99416 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5453+0.093 EUR
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SZMMBZ5257ELT1G mmbz5221elt1-d.pdf
SZMMBZ5257ELT1G
Hersteller: onsemi
Description: DIODE ZENER 33V 225MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Qualification: AEC-Q101
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.089 EUR
6000+0.075 EUR
9000+0.06 EUR
15000+0.059 EUR
21000+0.055 EUR
30000+0.052 EUR
Mindestbestellmenge: 3000
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SZMMBZ5257ELT1G mmbz5221elt1-d.pdf
SZMMBZ5257ELT1G
Hersteller: onsemi
Description: DIODE ZENER 33V 225MW SOT23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Qualification: AEC-Q101
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
Mindestbestellmenge: 40
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SZMMBZ5257ELT1G mmbz5221elt1-d.pdf
SZMMBZ5257ELT1G
Hersteller: onsemi
Description: DIODE ZENER 33V 225MW SOT23-3
Tolerance: ±5%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Qualification: AEC-Q101
auf Bestellung 103043 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6411+0.077 EUR
Mindestbestellmenge: 6411
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MMBZ5257B MMBZ5221B-5257B.pdf
MMBZ5257B
Hersteller: onsemi
Description: DIODE ZENER 33V 350MW SOT23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Produkt ist nicht verfügbar
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MMBZ5257B MMBZ5221B-5257B.pdf
MMBZ5257B
Hersteller: onsemi
Description: DIODE ZENER 33V 350MW SOT23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 33 V
Impedance (Max) (Zzt): 58 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 25 V
Produkt ist nicht verfügbar
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TIP33AG TIP33C-D.PDF
Hersteller: onsemi
Description: TRANS NPN 60V 10A SOT-93
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 2.5A, 10A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: SOT-93
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 80 W
Produkt ist nicht verfügbar
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AR0330CM1C12SHAA0-DP AR0330CM_Rev18_Mar2017.pdf
AR0330CM1C12SHAA0-DP
Hersteller: onsemi
Description: IMAGE SENSOR MONO CMOS 48-ILCC
Packaging: Bulk
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1536V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
auf Bestellung 1082 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+12.46 EUR
Mindestbestellmenge: 38
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AR0330SR1C00SUKA0-CR ar0330?pdf=Y
Hersteller: onsemi
Description: IMAGE SENSOR MONO CMOS 48-ILCC
Packaging: Bulk
Package / Case: 64-VFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2048H x 1536V
Supplier Device Package: 64-CSP (6.28x6.65)
Frames per Second: 30.0
auf Bestellung 190409 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+13.8 EUR
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AR0330SR1C00SUKA0-CR ar0330?pdf=Y
Hersteller: onsemi
Description: IMAGE SENSOR MONO CMOS 48-ILCC
Packaging: Tray
Package / Case: 64-VFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2048H x 1536V
Supplier Device Package: 64-CSP (6.28x6.65)
Frames per Second: 30.0
Produkt ist nicht verfügbar
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AR0330CM1C00SHAA0-DR AR0330CM_Rev18_Mar2017.pdf
AR0330CM1C00SHAA0-DR
Hersteller: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Bulk
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1536V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
auf Bestellung 48346 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+19.33 EUR
Mindestbestellmenge: 25
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AR0330CM1C12SHAA0-DR1 AR0330CM_Rev18_Mar2017.pdf
Hersteller: onsemi
Description: IMAGE SENSOR 3MP 1/3 CIS
Packaging: Bulk
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1296V
Frames per Second: 60.0
auf Bestellung 13193 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+20.01 EUR
Mindestbestellmenge: 24
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AR0330CM1C12SHAA0-DR1 AR0330CM_Rev18_Mar2017.pdf
Hersteller: onsemi
Description: IMAGE SENSOR 3MP 1/3 CIS
Packaging: Tray
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1296V
Frames per Second: 60.0
Produkt ist nicht verfügbar
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AR0330CM1C00SHAA0-DP AR0330CM_Rev18_Mar2017.pdf
AR0330CM1C00SHAA0-DP
Hersteller: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Bulk
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1536V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
auf Bestellung 1710 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+20.74 EUR
Mindestbestellmenge: 23
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AR0330CM1C00SHAA0-DP AR0330CM_Rev18_Mar2017.pdf
AR0330CM1C00SHAA0-DP
Hersteller: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1536V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
Produkt ist nicht verfügbar
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AR0330CM1C00SHAA0-DR1 AR0330CM_Rev18_Mar2017.pdf
AR0330CM1C00SHAA0-DR1
Hersteller: onsemi
Description: IMAGE SENSOR 3MP 1/3 CIS
Packaging: Bulk
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1296V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
auf Bestellung 2010 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+24.36 EUR
Mindestbestellmenge: 20
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AR0330CM1C00SHAA0-DR1 AR0330CM_Rev18_Mar2017.pdf
AR0330CM1C00SHAA0-DR1
Hersteller: onsemi
Description: IMAGE SENSOR 3MP 1/3 CIS
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V, 2.8V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2304H x 1296V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60.0
Produkt ist nicht verfügbar
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FQPF5N50CFTU FQPF5N50CF.pdf
FQPF5N50CFTU
Hersteller: onsemi
Description: MOSFET N-CH 500V 5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.55Ohm @ 2.5A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
Produkt ist nicht verfügbar
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2N6505TG ONSMS14589-1.pdf?t.download=true&u=5oefqw
2N6505TG
Hersteller: onsemi
Description: SCR 100V 25A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 40 mA
Current - Gate Trigger (Igt) (Max): 30 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 250A @ 60Hz
Current - On State (It (AV)) (Max): 16 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.8 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 25 A
Voltage - Off State: 100 V
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
271+1.67 EUR
Mindestbestellmenge: 271
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7WBD383AMX1TCG 7wbd383-d.pdf
7WBD383AMX1TCG
Hersteller: onsemi
Description: IC BUS FET EXCH SW 2X1:1 8-ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus FET Exchange Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 8-ULLGA (1.95x1)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1366+0.34 EUR
Mindestbestellmenge: 1366
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7WBD383CMX1TCG 7wbd383-d.pdf
7WBD383CMX1TCG
Hersteller: onsemi
Description: IC BUS FET EXCH SW 2X1:1 8-ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus FET Exchange Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 8-ULLGA (1.45x1)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1366+0.34 EUR
Mindestbestellmenge: 1366
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7WBD383BMX1TCG 7wbd383-d.pdf
7WBD383BMX1TCG
Hersteller: onsemi
Description: IC BUS FET EXCH SW 2X1:1 8-ULLGA
Packaging: Bulk
Package / Case: 8-XFLGA
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus FET Exchange Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 8-ULLGA (1.6x1)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1366+0.34 EUR
Mindestbestellmenge: 1366
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7WBD383MUTAG 7wbd383-d.pdf
7WBD383MUTAG
Hersteller: onsemi
Description: IC BUS FET EXCH SW 2X1:1 8-UDFN
Packaging: Bulk
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus FET Exchange Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 8-UDFN (1.8x1.2)
auf Bestellung 39638 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
892+0.53 EUR
Mindestbestellmenge: 892
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7WBD383AMUTCG 7wbd383-d.pdf
7WBD383AMUTCG
Hersteller: onsemi
Description: IC BUS FET EXCH SW 2X1:1 8-UQFN
Packaging: Bulk
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Circuit: 2 x 1:1
Type: Bus FET Exchange Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 8-UQFN (1.6x1.6)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
892+0.53 EUR
Mindestbestellmenge: 892
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FCH104N60 FCH104N60-D.PDF
FCH104N60
Hersteller: onsemi
Description: MOSFET N-CH 600V 37A TO247-3
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 18.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 380 V
auf Bestellung 347 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
121+3.85 EUR
Mindestbestellmenge: 121
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HBL1025T1G HBL1015%2C1025.pdf
HBL1025T1G
Hersteller: onsemi
Description: LGHT PROTECT LED SHUNT 11.5V SMD
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Voltage: 11.5V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: 5-TSOP
Number of Circuits: 1
Produkt ist nicht verfügbar
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HBL1025T1G HBL1015%2C1025.pdf
HBL1025T1G
Hersteller: onsemi
Description: LGHT PROTECT LED SHUNT 11.5V SMD
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Voltage: 11.5V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: 5-TSOP
Number of Circuits: 1
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Anzahl Preis
1397+0.32 EUR
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HBL1015T1G HBL1015%2C1025.pdf
HBL1015T1G
Hersteller: onsemi
Description: LIGHT PROTECT LED SHUNT 8V SMD
Packaging: Bulk
Package / Case: SOT-23-5 Thin, TSOT-23-5
Voltage: 8V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: 5-TSOP
Number of Circuits: 1
auf Bestellung 6000 Stücke:
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Anzahl Preis
1680+0.28 EUR
Mindestbestellmenge: 1680
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MUR120 mur120-d.pdf
MUR120
Hersteller: onsemi
Description: DIODE STANDARD 200V 1A AXIAL
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 24190 Stücke:
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2597+0.18 EUR
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N24C256X-1CBT5G n24c256x-d.pdf
N24C256X-1CBT5G
Hersteller: onsemi
Description: 256 KB I2C CMOS SERIAL EEPROM WI
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (1x1)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 32K x 8
Produkt ist nicht verfügbar
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N24C256X-1CBT5G n24c256x-d.pdf
N24C256X-1CBT5G
Hersteller: onsemi
Description: 256 KB I2C CMOS SERIAL EEPROM WI
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (1x1)
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 32K x 8
auf Bestellung 4965 Stücke:
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Anzahl Preis
38+0.48 EUR
40+0.44 EUR
41+0.43 EUR
50+0.42 EUR
100+0.41 EUR
250+0.4 EUR
500+0.39 EUR
1000+0.38 EUR
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FSFR1700HS FAIRS34195-1.pdf?t.download=true&u=5oefqw
FSFR1700HS
Hersteller: onsemi
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 600kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Power (Watts): 200 W
Produkt ist nicht verfügbar
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FSFR1700HSL FAIRS34195-1.pdf?t.download=true&u=5oefqw
FSFR1700HSL
Hersteller: onsemi
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 600kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP (L forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Power (Watts): 200 W
Produkt ist nicht verfügbar
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FSFR1700 FAIRS29359-1.pdf?t.download=true&u=5oefqw
FSFR1700
Hersteller: onsemi
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 11.3V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 14.5 V
Control Features: EN, Frequency Control
Power (Watts): 200 W
Produkt ist nicht verfügbar
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FSFR1700US FSFR-US_Series.pdf
FSFR1700US
Hersteller: onsemi
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SSIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Power (Watts): 200 W
Produkt ist nicht verfügbar
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FSFR1700USL FSFR-US_Series.pdf
FSFR1700USL
Hersteller: onsemi
Description: IC OFFLINE SW HALF-BRIDGE 9SIP
Packaging: Tube
Package / Case: 10-SIP Module, 9 Leads, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): Yes
Voltage - Breakdown: 500V
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 9-SIP (L forming)
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Power (Watts): 200 W
Produkt ist nicht verfügbar
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FCH125N60E fch125n60e-d.pdf
FCH125N60E
Hersteller: onsemi
Description: MOSFET N-CH 600V 29A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 14.5A, 10V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 380 V
Produkt ist nicht verfügbar
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DM74AS30MX DM74AS30.pdf
DM74AS30MX
Hersteller: onsemi
Description: IC GATE NAND 1CH 8-INP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 2mA, 20mA
Number of Inputs: 8
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 5ns @ 5V, 50pF
Number of Circuits: 1
Produkt ist nicht verfügbar
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MT9P031I12STM-DR1 mt9p031-d.pdf
MT9P031I12STM-DR1
Hersteller: onsemi
Description: SENSOR IMAGE 5MP MONO CMOS 48LCC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.9V, 2.6V ~ 3.1V
Pixel Size: 2.2µm x 2.2µm
Active Pixel Array: 2592H x 1944V
Supplier Device Package: 48-ILCC (10x10)
Frames per Second: 53.0
Produkt ist nicht verfügbar
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2N3702 2N3702.pdf
2N3702
Hersteller: onsemi
Description: TRANS PNP 25V 0.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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NXH25C120L2C2SG
NXH25C120L2C2SG
Hersteller: onsemi
Description: IGBT MODULE, CIB 1200 V, 25 A IG
Packaging: Bulk
Package / Case: 26-PowerDIP Module (1.199", 47.20mm)
Mounting Type: Through Hole
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
NTC Thermistor: Yes
Supplier Device Package: 26-DIP
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 250 µA
Input Capacitance (Cies) @ Vce: 6.2 nF @ 20 V
auf Bestellung 18 Stücke:
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Anzahl Preis
5+94.55 EUR
Mindestbestellmenge: 5
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MOC3043SM MOC3043M-D.PDF
MOC3043SM
Hersteller: onsemi
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.25V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 400µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 5mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 12576 Stücke:
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Anzahl Preis
11+1.64 EUR
50+0.93 EUR
100+0.85 EUR
500+0.72 EUR
1000+0.68 EUR
2000+0.64 EUR
5000+0.6 EUR
10000+0.57 EUR
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NLX1G11AMUTCG NLX1G11.pdf
NLX1G11AMUTCG
Hersteller: onsemi
Description: IC GATE AND 1CH 3-INP 6UDFN
Packaging: Bulk
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: 6-UDFN (1.45x1)
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
auf Bestellung 70971 Stücke:
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Anzahl Preis
2732+0.17 EUR
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NLVX1G11AMUTCG
Hersteller: onsemi
Description: IC GATE AND 1CH 3-INP 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: 6-UDFN (1.45x1)
Input Logic Level - Low: 0.1V ~ 0.55V
Max Propagation Delay @ V, Max CL: 7ns @ 5.5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NLVX1G11AMUTCG
Hersteller: onsemi
Description: IC GATE AND 1CH 3-INP 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 3
Supplier Device Package: 6-UDFN (1.45x1)
Input Logic Level - Low: 0.1V ~ 0.55V
Max Propagation Delay @ V, Max CL: 7ns @ 5.5V, 50pF
Grade: Automotive
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
auf Bestellung 1848 Stücke:
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Anzahl Preis
24+0.74 EUR
40+0.44 EUR
49+0.36 EUR
100+0.27 EUR
250+0.23 EUR
500+0.2 EUR
1000+0.18 EUR
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NLSX5011AMUTCG nlsx5011-d.pdf
NLSX5011AMUTCG
Hersteller: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 6UDFN
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Bulk
Package / Case: 6-UFDFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 6-UDFN (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
auf Bestellung 33000 Stücke:
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Anzahl Preis
423+1.1 EUR
Mindestbestellmenge: 423
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NLSX5011AMUTBG nlsx5011-d.pdf
NLSX5011AMUTBG
Hersteller: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 6UDFN
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 6-UDFN (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
Produkt ist nicht verfügbar
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NLSX5011AMUTBG nlsx5011-d.pdf
NLSX5011AMUTBG
Hersteller: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 6UDFN
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 6-UDFN (1.45x1)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 0.9 V ~ 4.5 V
Number of Circuits: 1
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.66 EUR
11+1.65 EUR
25+1.38 EUR
100+1.08 EUR
250+0.93 EUR
500+0.84 EUR
1000+0.76 EUR
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MC7908CD2TR4G mc7900-d.pdf
MC7908CD2TR4G
Hersteller: onsemi
Description: IC REG LINEAR -8V 1A D2PAK-3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: D2PAK-3
Voltage - Output (Min/Fixed): -8V
PSRR: 62dB (120Hz)
Voltage Dropout (Max): 1.3V @ 1A (Typ)
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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TF202THC-4-TL-H
TF202THC-4-TL-H
Hersteller: onsemi
Description: JFET N-CH 1MA 3VTFP
Packaging: Bulk
Package / Case: 3-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
Current Drain (Id) - Max: 1 mA
Supplier Device Package: 3-VTFP
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 200 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 140 µA @ 5 V
auf Bestellung 1279 Stücke:
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Anzahl Preis
1279+0.062 EUR
Mindestbestellmenge: 1279
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CAT24C08YI-G cat24c01-d.pdf
CAT24C08YI-G
Hersteller: onsemi
Description: IC EEPROM 8KBIT I2C 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
auf Bestellung 139989 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
982+0.47 EUR
Mindestbestellmenge: 982
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CAT24C08YI-G cat24c01-d.pdf
CAT24C08YI-G
Hersteller: onsemi
Description: IC EEPROM 8KBIT I2C 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Not Verified
auf Bestellung 68000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.46 EUR
Mindestbestellmenge: 100
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