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NC7WP14P6X NC7WP14P6X onsemi NC7WP14-D.PDF Description: IC INVERT SCHMITT 2CH 2-INP SC88
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SC-88 (SC-70-6)
Input Logic Level - High: 0.65V ~ 2.6V
Input Logic Level - Low: 0.1V ~ 0.6V
Max Propagation Delay @ V, Max CL: 9.2ns @ 3.3V, 30pF
Number of Circuits: 2
Current - Quiescent (Max): 900 nA
auf Bestellung 807 Stücke:
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27+0.67 EUR
100+0.51 EUR
250+0.43 EUR
500+0.39 EUR
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MMBV3401LT3G MMBV3401LT3G onsemi mmbv3401lt1-d.pdf Description: RF DIODE PIN 35V 200MW SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Resistance @ If, F: 700mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 200 mW
Produkt ist nicht verfügbar
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UJ3C120070K3S UJ3C120070K3S onsemi da008673 Description: SICFET N-CH 1200V 34.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.5A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 12V
Power Dissipation (Max): 254.2W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
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UF3C120080K3S UF3C120080K3S onsemi da008639 Description: SICFET N-CH 1200V 33A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V
Power Dissipation (Max): 254.2W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
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UF3C120080K4S UF3C120080K4S onsemi da008640 Description: SICFET N-CH 1200V 33A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V
Power Dissipation (Max): 254.2W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 16385 Stücke:
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UJ3C120070K4S onsemi da008950 Description: 1200V/70MOHM, N-OFF SIC CASCODE,
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.5A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 12V
Power Dissipation (Max): 254.2W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Produkt ist nicht verfügbar
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LM317MDT LM317MDT onsemi LM317M-D.PDF Description: IC REG LINEAR POS ADJ 500MA DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Max): 37V
Voltage - Output (Min/Fixed): 1.2V
PSRR: 80dB ~ 65dB (120Hz)
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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NC7SZ19P6X NC7SZ19P6X onsemi nc7sz19-d.pdf Description: IC DECODER/DEMUX 1 X 1:2 SC-88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 1:2
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Voltage Supply Source: Single Supply
Supplier Device Package: SC-88 (SC-70-6)
auf Bestellung 48000 Stücke:
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15000+0.066 EUR
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NC7SZ19P6X NC7SZ19P6X onsemi nc7sz19-d.pdf Description: IC DECODER/DEMUX 1 X 1:2 SC-88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 1:2
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Voltage Supply Source: Single Supply
Supplier Device Package: SC-88 (SC-70-6)
auf Bestellung 48333 Stücke:
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170+0.1 EUR
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UJ3N065080K3S UJ3N065080K3S onsemi uj3n065080k3s-d.pdf Description: JFET N-CH 650V 32A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V
Voltage - Breakdown (V(BR)GSS): 650 V
Current Drain (Id) - Max: 32 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 650 V
Power - Max: 190 W
Resistance - RDS(On): 95 mOhms
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UF3N170400B7S UF3N170400B7S onsemi uf3n170400b7s-d.pdf Description: JFET N-CH 1.7KV 6.8A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V
Voltage - Breakdown (V(BR)GSS): 1700 V
Current Drain (Id) - Max: 6.8 A
Supplier Device Package: D2PAK-7
Drain to Source Voltage (Vdss): 1700 V
Power - Max: 68 W
Resistance - RDS(On): 500 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 2.2 µA @ 1700 V
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UF3N170400B7S UF3N170400B7S onsemi uf3n170400b7s-d.pdf Description: JFET N-CH 1.7KV 6.8A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V
Voltage - Breakdown (V(BR)GSS): 1700 V
Current Drain (Id) - Max: 6.8 A
Supplier Device Package: D2PAK-7
Drain to Source Voltage (Vdss): 1700 V
Power - Max: 68 W
Resistance - RDS(On): 500 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 2.2 µA @ 1700 V
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UJ3N120070K3S UJ3N120070K3S onsemi da008701 Description: JFET N-CH 1200V 33.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 100V
Voltage - Breakdown (V(BR)GSS): 1200 V
Current Drain (Id) - Max: 33.5 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 1200 V
Power - Max: 254 W
Resistance - RDS(On): 90 mOhms
auf Bestellung 1679 Stücke:
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UJ4C075023K4S UJ4C075023K4S onsemi uj4c075023k4s-d.pdf Description: 750V/23MOHM, SIC, CASCODE, G4, T
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
auf Bestellung 1133 Stücke:
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UJ3N120065K3S UJ3N120065K3S onsemi uj3n120065k3s-d.pdf Description: JFET N-CH 1.2KV 34A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1008pF @ 100V
Voltage - Breakdown (V(BR)GSS): 1200 V
Current Drain (Id) - Max: 34 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 1200 V
Power - Max: 254 W
Resistance - RDS(On): 55 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 5 µA @ 1200 V
auf Bestellung 1996 Stücke:
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UJ4C075018K3S UJ4C075018K3S onsemi uj4c075018k3s-d.pdf Description: SICFET N-CH 750V 81A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 12V
Power Dissipation (Max): 385W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1422 pF @ 100 V
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UJ4SC075011K4S UJ4SC075011K4S onsemi uj4sc075011k4s-d.pdf Description: 750V/11MOHM, SIC, STACKED CASCOD
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V
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UJ4SC075009K4S UJ4SC075009K4S onsemi uj4sc075009k4s-d.pdf Description: 750V/9MOHM, SIC, STACKED CASCODE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 70A, 12V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 400 V
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UJ3N120035K3S UJ3N120035K3S onsemi uj3n120035k3s-d.pdf Description: JFET N-CH 1200V 63A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2145pF @ 100V
Voltage - Breakdown (V(BR)GSS): 1200 V
Current Drain (Id) - Max: 63 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 1200 V
Power - Max: 429 W
Resistance - RDS(On): 45 mOhms
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UJ4SC075006K4S UJ4SC075006K4S onsemi UJ4SC075006K4S-D.PDF Description: 750V/6MOHM, SIC, STACKED CASCODE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 12V
Power Dissipation (Max): 714W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V
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UF3SC120009K4S UF3SC120009K4S onsemi UF3SC120009K4S-D.PDF Description: SICFET N-CH 1200V 120A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 12V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8512 pF @ 100 V
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UF3SC065007K4S UF3SC065007K4S onsemi UF3SC065007K4S-D.PDF Description: MOSFET N-CH 650V 120A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 12V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 100 V
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FAN4174IP5X FAN4174IP5X onsemi FAIRS29511-1.pdf?t.download=true&u=5oefqw Description: IC OPAMP VFB 1 CIRCUIT SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Voltage Feedback
Operating Temperature: -40°C ~ 85°C
Current - Supply: 200µA
Slew Rate: 3V/µs
Gain Bandwidth Product: 3.7 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 8 mV
Supplier Device Package: SC-70-5
Number of Circuits: 1
Current - Output / Channel: 33 mA
-3db Bandwidth: 3.7 MHz
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.25 V
Produkt ist nicht verfügbar
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NCP81102MNTXG NCP81102MNTXG onsemi Description: IC REG BUCK CTLR 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 32-QFN (5x5)
Produkt ist nicht verfügbar
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NCP81102MNTXG NCP81102MNTXG onsemi Description: IC REG BUCK CTLR 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 32-QFN (5x5)
Produkt ist nicht verfügbar
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NCP81102MNTWG NCP81102MNTWG onsemi Description: IC REG BUCK CTLR 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 32-QFN (5x5)
Produkt ist nicht verfügbar
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MC74AC153DR2 MC74AC153DR2 onsemi MOTOS04874-1.pdf?t.download=true&u=5oefqw Description: MUX 1-ELEMENT 8-IN 16-PIN SOIC
Packaging: Bulk
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MC74ACT151DR2 MC74ACT151DR2 onsemi MOTOS04873-1.pdf?t.download=true&u=5oefqw Description: MUX 1-ELEMENT 8-IN 16-PIN SOIC
Packaging: Bulk
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1N4447TR 1N4447TR onsemi CSEMD005-114.pdf?t.download=true&u=5oefqw Description: DIODE STANDARD 100V DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Produkt ist nicht verfügbar
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FDMS9408-F085 FDMS9408-F085 onsemi fdms9408_f085-d.pdf Description: MOSFET N-CH 40V 80A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power56
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDMS9408L-F085 FDMS9408L-F085 onsemi fdms9408l_f085-d.pdf Description: MOSFET N-CH 40V 80A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power56
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDS4070N3 FDS4070N3 onsemi FDS4070N3.pdf Description: MOSFET N-CH 40V 15.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15.3A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V
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FDS4070N3 FDS4070N3 onsemi FDS4070N3.pdf Description: MOSFET N-CH 40V 15.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15.3A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V
Produkt ist nicht verfügbar
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FDS4070N7 FDS4070N7 onsemi FDS4070N7.pdf Description: MOSFET N-CH 40V 15.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15.3A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V
Produkt ist nicht verfügbar
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FDS4070N7 FDS4070N7 onsemi FDS4070N7.pdf Description: MOSFET N-CH 40V 15.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15.3A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V
Produkt ist nicht verfügbar
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KSC1507YTU KSC1507YTU onsemi KSC1507.pdf Description: TRANS NPN 300V 200UA TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 10V
Frequency - Transition: 80MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 200 µA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
Produkt ist nicht verfügbar
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NLA9306USG NLA9306USG onsemi pca9306-d.pdf Description: IC XLTR VL BIDIR US8
Features: Auto-Direction Sensing
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: US8
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.6 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
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NLA9306USG NLA9306USG onsemi pca9306-d.pdf Description: IC XLTR VL BIDIR US8
Features: Auto-Direction Sensing
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: US8
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.6 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
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74ABT245CSJX 74ABT245CSJX onsemi 74ABT245.pdf Description: IC TXRX NON-INVERT 5.5V 20SOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 20-SOP
Produkt ist nicht verfügbar
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BDX34C BDX34C onsemi bdx34c-d.pdf Description: TRANS PNP DARL 100V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 3A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 70 W
Produkt ist nicht verfügbar
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1N5338B 1N5338B onsemi 1n5333b-d.pdf Description: DIODE ZENER 5.1V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 1.5 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Produkt ist nicht verfügbar
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NCV57085DR2G NCV57085DR2G onsemi ncd57085-d.pdf Description: DGTL ISO 2.5KV 1CH GT DVR 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 7.5A, 7A
Technology: Capacitive Coupling
Current - Output High, Low: 7.5A, 7A, 7.5A, 7A
Voltage - Isolation: 2500Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 30ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 0V ~ 30V
Qualification: AEC-Q100
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NCV57085DR2G NCV57085DR2G onsemi ncd57085-d.pdf Description: DGTL ISO 2.5KV 1CH GT DVR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 7.5A, 7A
Technology: Capacitive Coupling
Current - Output High, Low: 7.5A, 7A, 7.5A, 7A
Voltage - Isolation: 2500Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 30ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 0V ~ 30V
Qualification: AEC-Q100
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NSVMUN5216T1G NSVMUN5216T1G onsemi dtc143t-d.pdf Description: NPN BIPOLAR DIGITAL TRANSISTOR (
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
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NSVMUN5216T1G NSVMUN5216T1G onsemi dtc143t-d.pdf Description: NPN BIPOLAR DIGITAL TRANSISTOR (
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
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AR0234CSSC00SUKA0-CP1 AR0234CSSC00SUKA0-CP1 onsemi ar0234cs?pdf=Y Description: 2MP 1/3 CIS SO
Packaging: Bulk
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
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AR0234CSSM00SUKA0-CP2 AR0234CSSM00SUKA0-CP2 onsemi Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
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AR0234CSSM28SUKA0-CP2 AR0234CSSM28SUKA0-CP2 onsemi Description: 2MP 1/3 CIS SO
Packaging: Tube
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Produkt ist nicht verfügbar
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AR0234CSSC28SUKA0-CP2 AR0234CSSC28SUKA0-CP2 onsemi Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Produkt ist nicht verfügbar
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AR0234CSSC00SUKA0-CP2 AR0234CSSC00SUKA0-CP2 onsemi Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Produkt ist nicht verfügbar
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AR0234CSSM00SUD20 onsemi Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Package / Case: Die
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: Die
Frames per Second: 120.0
Produkt ist nicht verfügbar
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AR0234CSSC28SUD20 onsemi Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Package / Case: Die
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: Die
Frames per Second: 120.0
Produkt ist nicht verfügbar
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AR0234CSSM28SUD20 onsemi Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Package / Case: Die
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: Die
Frames per Second: 120.0
Produkt ist nicht verfügbar
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AR0234CSSC00SUD20 AR0234CSSC00SUD20 onsemi Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
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AR0234AT3M28XUEA0-DRBR-E onsemi Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Grade: Automotive
Frames per Second: 120.0
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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FFSH2065BDN FFSH2065BDN onsemi ffsh2065bdn-d.pdf Description: DIODE ARRAY SIC 650V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
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FFSH2065B-F155 FFSH2065B-F155 onsemi ffsh2065b-f155-d.pdf Description: DIODE SIL CARB 650V 22.3A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 866pF @ 1V, 100kHz
Current - Average Rectified (Io): 22.3A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
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RFP15N05L RFP15N05L onsemi RFP15N05L.pdf Description: MOSFET N-CH 50V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 15A, 5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
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NL7SZ19DFT2G-Q NL7SZ19DFT2G-Q onsemi nl7sz19-d.pdf Description: 1:2 DIGITAL MULTIPLEXER / DEMULT
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 1:2
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Voltage Supply Source: Single Supply
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q100
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150000+0.046 EUR
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NL7SZ19DFT2G-Q NL7SZ19DFT2G-Q onsemi nl7sz19-d.pdf Description: 1:2 DIGITAL MULTIPLEXER / DEMULT
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 1:2
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Voltage Supply Source: Single Supply
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 188900 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
68+0.26 EUR
83+0.21 EUR
113+0.16 EUR
250+0.13 EUR
500+0.11 EUR
1000+0.099 EUR
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NC7WP14P6X NC7WP14-D.PDF
NC7WP14P6X
Hersteller: onsemi
Description: IC INVERT SCHMITT 2CH 2-INP SC88
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SC-88 (SC-70-6)
Input Logic Level - High: 0.65V ~ 2.6V
Input Logic Level - Low: 0.1V ~ 0.6V
Max Propagation Delay @ V, Max CL: 9.2ns @ 3.3V, 30pF
Number of Circuits: 2
Current - Quiescent (Max): 900 nA
auf Bestellung 807 Stücke:
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Anzahl Preis
14+1.34 EUR
22+0.81 EUR
27+0.67 EUR
100+0.51 EUR
250+0.43 EUR
500+0.39 EUR
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MMBV3401LT3G mmbv3401lt1-d.pdf
MMBV3401LT3G
Hersteller: onsemi
Description: RF DIODE PIN 35V 200MW SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Diode Type: PIN - Single
Operating Temperature: 125°C (TJ)
Capacitance @ Vr, F: 1pF @ 20V, 1MHz
Resistance @ If, F: 700mOhm @ 10mA, 100MHz
Voltage - Peak Reverse (Max): 35V
Supplier Device Package: SOT-23-3 (TO-236)
Power Dissipation (Max): 200 mW
Produkt ist nicht verfügbar
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UJ3C120070K3S da008673
UJ3C120070K3S
Hersteller: onsemi
Description: SICFET N-CH 1200V 34.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.5A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 12V
Power Dissipation (Max): 254.2W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 567 Stücke:
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Anzahl Preis
1+26.4 EUR
30+18.55 EUR
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UF3C120080K3S da008639
UF3C120080K3S
Hersteller: onsemi
Description: SICFET N-CH 1200V 33A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V
Power Dissipation (Max): 254.2W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 16414 Stücke:
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Anzahl Preis
1+28.49 EUR
30+17.64 EUR
120+15.35 EUR
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UF3C120080K4S da008640
UF3C120080K4S
Hersteller: onsemi
Description: SICFET N-CH 1200V 33A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 20A, 12V
Power Dissipation (Max): 254.2W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
auf Bestellung 16385 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.53 EUR
30+17.66 EUR
120+15.37 EUR
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UJ3C120070K4S da008950
Hersteller: onsemi
Description: 1200V/70MOHM, N-OFF SIC CASCODE,
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.5A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 20A, 12V
Power Dissipation (Max): 254.2W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 100 V
Produkt ist nicht verfügbar
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LM317MDT LM317M-D.PDF
LM317MDT
Hersteller: onsemi
Description: IC REG LINEAR POS ADJ 500MA DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 10 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Max): 37V
Voltage - Output (Min/Fixed): 1.2V
PSRR: 80dB ~ 65dB (120Hz)
Protection Features: Over Current, Over Temperature
Produkt ist nicht verfügbar
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NC7SZ19P6X nc7sz19-d.pdf
NC7SZ19P6X
Hersteller: onsemi
Description: IC DECODER/DEMUX 1 X 1:2 SC-88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 1:2
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Voltage Supply Source: Single Supply
Supplier Device Package: SC-88 (SC-70-6)
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.085 EUR
6000+0.076 EUR
9000+0.071 EUR
15000+0.066 EUR
21000+0.063 EUR
30000+0.06 EUR
Mindestbestellmenge: 3000
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NC7SZ19P6X nc7sz19-d.pdf
NC7SZ19P6X
Hersteller: onsemi
Description: IC DECODER/DEMUX 1 X 1:2 SC-88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 1:2
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Voltage Supply Source: Single Supply
Supplier Device Package: SC-88 (SC-70-6)
auf Bestellung 48333 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
170+0.1 EUR
194+0.091 EUR
231+0.076 EUR
254+0.069 EUR
500+0.065 EUR
1000+0.062 EUR
Mindestbestellmenge: 112
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UJ3N065080K3S uj3n065080k3s-d.pdf
UJ3N065080K3S
Hersteller: onsemi
Description: JFET N-CH 650V 32A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 100V
Voltage - Breakdown (V(BR)GSS): 650 V
Current Drain (Id) - Max: 32 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 650 V
Power - Max: 190 W
Resistance - RDS(On): 95 mOhms
auf Bestellung 622 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.49 EUR
30+9.67 EUR
120+9.22 EUR
510+8.77 EUR
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UF3N170400B7S uf3n170400b7s-d.pdf
UF3N170400B7S
Hersteller: onsemi
Description: JFET N-CH 1.7KV 6.8A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V
Voltage - Breakdown (V(BR)GSS): 1700 V
Current Drain (Id) - Max: 6.8 A
Supplier Device Package: D2PAK-7
Drain to Source Voltage (Vdss): 1700 V
Power - Max: 68 W
Resistance - RDS(On): 500 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 2.2 µA @ 1700 V
auf Bestellung 6400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+8.22 EUR
Mindestbestellmenge: 800
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UF3N170400B7S uf3n170400b7s-d.pdf
UF3N170400B7S
Hersteller: onsemi
Description: JFET N-CH 1.7KV 6.8A D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 225pF @ 100V
Voltage - Breakdown (V(BR)GSS): 1700 V
Current Drain (Id) - Max: 6.8 A
Supplier Device Package: D2PAK-7
Drain to Source Voltage (Vdss): 1700 V
Power - Max: 68 W
Resistance - RDS(On): 500 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 2.2 µA @ 1700 V
auf Bestellung 6961 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+17.27 EUR
10+12.06 EUR
100+10.06 EUR
Mindestbestellmenge: 2
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UJ3N120070K3S da008701
UJ3N120070K3S
Hersteller: onsemi
Description: JFET N-CH 1200V 33.5A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 985pF @ 100V
Voltage - Breakdown (V(BR)GSS): 1200 V
Current Drain (Id) - Max: 33.5 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 1200 V
Power - Max: 254 W
Resistance - RDS(On): 90 mOhms
auf Bestellung 1679 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+28.53 EUR
30+17.66 EUR
120+15.37 EUR
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UJ4C075023K4S uj4c075023k4s-d.pdf
UJ4C075023K4S
Hersteller: onsemi
Description: 750V/23MOHM, SIC, CASCODE, G4, T
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
auf Bestellung 1133 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+22.84 EUR
30+17.6 EUR
120+16.52 EUR
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UJ3N120065K3S uj3n120065k3s-d.pdf
UJ3N120065K3S
Hersteller: onsemi
Description: JFET N-CH 1.2KV 34A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 1008pF @ 100V
Voltage - Breakdown (V(BR)GSS): 1200 V
Current Drain (Id) - Max: 34 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 1200 V
Power - Max: 254 W
Resistance - RDS(On): 55 mOhms
Current - Drain (Idss) @ Vds (Vgs=0): 5 µA @ 1200 V
auf Bestellung 1996 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+34.25 EUR
30+25.92 EUR
120+23.97 EUR
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UJ4C075018K3S uj4c075018k3s-d.pdf
UJ4C075018K3S
Hersteller: onsemi
Description: SICFET N-CH 750V 81A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 81A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 12V
Power Dissipation (Max): 385W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1422 pF @ 100 V
auf Bestellung 5111 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+32.23 EUR
30+22.34 EUR
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UJ4SC075011K4S uj4sc075011k4s-d.pdf
UJ4SC075011K4S
Hersteller: onsemi
Description: 750V/11MOHM, SIC, STACKED CASCOD
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V
auf Bestellung 917 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+46.94 EUR
30+31.36 EUR
120+31.31 EUR
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UJ4SC075009K4S uj4sc075009k4s-d.pdf
UJ4SC075009K4S
Hersteller: onsemi
Description: 750V/9MOHM, SIC, STACKED CASCODE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 70A, 12V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 400 V
auf Bestellung 422 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+62.13 EUR
30+41.59 EUR
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UJ3N120035K3S uj3n120035k3s-d.pdf
UJ3N120035K3S
Hersteller: onsemi
Description: JFET N-CH 1200V 63A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 2145pF @ 100V
Voltage - Breakdown (V(BR)GSS): 1200 V
Current Drain (Id) - Max: 63 A
Supplier Device Package: TO-247-3
Drain to Source Voltage (Vdss): 1200 V
Power - Max: 429 W
Resistance - RDS(On): 45 mOhms
auf Bestellung 3963 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+55.62 EUR
30+36.65 EUR
120+36.22 EUR
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UJ4SC075006K4S UJ4SC075006K4S-D.PDF
UJ4SC075006K4S
Hersteller: onsemi
Description: 750V/6MOHM, SIC, STACKED CASCODE
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 80A, 12V
Power Dissipation (Max): 714W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V
auf Bestellung 606 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+77.23 EUR
30+55.54 EUR
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UF3SC120009K4S UF3SC120009K4S-D.PDF
UF3SC120009K4S
Hersteller: onsemi
Description: SICFET N-CH 1200V 120A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 100A, 12V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8512 pF @ 100 V
auf Bestellung 619 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+99.69 EUR
30+75.24 EUR
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UF3SC065007K4S UF3SC065007K4S-D.PDF
UF3SC065007K4S
Hersteller: onsemi
Description: MOSFET N-CH 650V 120A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 50A, 12V
Power Dissipation (Max): 789W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 214 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8360 pF @ 100 V
auf Bestellung 987 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+111.2 EUR
30+87.82 EUR
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FAN4174IP5X FAIRS29511-1.pdf?t.download=true&u=5oefqw
FAN4174IP5X
Hersteller: onsemi
Description: IC OPAMP VFB 1 CIRCUIT SC70-5
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Voltage Feedback
Operating Temperature: -40°C ~ 85°C
Current - Supply: 200µA
Slew Rate: 3V/µs
Gain Bandwidth Product: 3.7 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 8 mV
Supplier Device Package: SC-70-5
Number of Circuits: 1
Current - Output / Channel: 33 mA
-3db Bandwidth: 3.7 MHz
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.25 V
Produkt ist nicht verfügbar
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NCP81102MNTXG
NCP81102MNTXG
Hersteller: onsemi
Description: IC REG BUCK CTLR 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 32-QFN (5x5)
Produkt ist nicht verfügbar
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NCP81102MNTXG
NCP81102MNTXG
Hersteller: onsemi
Description: IC REG BUCK CTLR 32QFN
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 32-QFN (5x5)
Produkt ist nicht verfügbar
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NCP81102MNTWG
NCP81102MNTWG
Hersteller: onsemi
Description: IC REG BUCK CTLR 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
Supplier Device Package: 32-QFN (5x5)
Produkt ist nicht verfügbar
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MC74AC153DR2 MOTOS04874-1.pdf?t.download=true&u=5oefqw
MC74AC153DR2
Hersteller: onsemi
Description: MUX 1-ELEMENT 8-IN 16-PIN SOIC
Packaging: Bulk
auf Bestellung 3439 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1680+0.28 EUR
Mindestbestellmenge: 1680
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MC74ACT151DR2 MOTOS04873-1.pdf?t.download=true&u=5oefqw
MC74ACT151DR2
Hersteller: onsemi
Description: MUX 1-ELEMENT 8-IN 16-PIN SOIC
Packaging: Bulk
auf Bestellung 56363 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1402+0.35 EUR
Mindestbestellmenge: 1402
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1N4447TR CSEMD005-114.pdf?t.download=true&u=5oefqw
1N4447TR
Hersteller: onsemi
Description: DIODE STANDARD 100V DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 100 V
Produkt ist nicht verfügbar
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FDMS9408-F085 fdms9408_f085-d.pdf
FDMS9408-F085
Hersteller: onsemi
Description: MOSFET N-CH 40V 80A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power56
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDMS9408L-F085 fdms9408l_f085-d.pdf
FDMS9408L-F085
Hersteller: onsemi
Description: MOSFET N-CH 40V 80A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power56
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDS4070N3 FDS4070N3.pdf
FDS4070N3
Hersteller: onsemi
Description: MOSFET N-CH 40V 15.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15.3A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V
Produkt ist nicht verfügbar
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FDS4070N3 FDS4070N3.pdf
FDS4070N3
Hersteller: onsemi
Description: MOSFET N-CH 40V 15.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 15.3A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V
Produkt ist nicht verfügbar
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FDS4070N7 FDS4070N7.pdf
FDS4070N7
Hersteller: onsemi
Description: MOSFET N-CH 40V 15.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15.3A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V
Produkt ist nicht verfügbar
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FDS4070N7 FDS4070N7.pdf
FDS4070N7
Hersteller: onsemi
Description: MOSFET N-CH 40V 15.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width) Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.3A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15.3A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: 8-SO FLMP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2819 pF @ 20 V
Produkt ist nicht verfügbar
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KSC1507YTU KSC1507.pdf
KSC1507YTU
Hersteller: onsemi
Description: TRANS NPN 300V 200UA TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 10V
Frequency - Transition: 80MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 200 µA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 15 W
Produkt ist nicht verfügbar
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NLA9306USG pca9306-d.pdf
NLA9306USG
Hersteller: onsemi
Description: IC XLTR VL BIDIR US8
Features: Auto-Direction Sensing
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: US8
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.6 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.13 EUR
Mindestbestellmenge: 3000
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NLA9306USG pca9306-d.pdf
NLA9306USG
Hersteller: onsemi
Description: IC XLTR VL BIDIR US8
Features: Auto-Direction Sensing
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
Supplier Device Package: US8
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 3.6 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Number of Circuits: 1
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
82+0.21 EUR
93+0.19 EUR
109+0.16 EUR
250+0.15 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 56
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74ABT245CSJX 74ABT245.pdf
74ABT245CSJX
Hersteller: onsemi
Description: IC TXRX NON-INVERT 5.5V 20SOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 20-SOP
Produkt ist nicht verfügbar
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BDX34C bdx34c-d.pdf
BDX34C
Hersteller: onsemi
Description: TRANS PNP DARL 100V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 3A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 3A, 3V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 70 W
Produkt ist nicht verfügbar
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1N5338B 1n5333b-d.pdf
1N5338B
Hersteller: onsemi
Description: DIODE ZENER 5.1V 5W AXIAL
Tolerance: ±5%
Packaging: Bulk
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 1.5 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Produkt ist nicht verfügbar
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NCV57085DR2G ncd57085-d.pdf
NCV57085DR2G
Hersteller: onsemi
Description: DGTL ISO 2.5KV 1CH GT DVR 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 7.5A, 7A
Technology: Capacitive Coupling
Current - Output High, Low: 7.5A, 7A, 7.5A, 7A
Voltage - Isolation: 2500Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 30ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 0V ~ 30V
Qualification: AEC-Q100
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.28 EUR
5000+1.26 EUR
Mindestbestellmenge: 2500
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NCV57085DR2G ncd57085-d.pdf
NCV57085DR2G
Hersteller: onsemi
Description: DGTL ISO 2.5KV 1CH GT DVR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Current - Peak Output: 7.5A, 7A
Technology: Capacitive Coupling
Current - Output High, Low: 7.5A, 7A, 7.5A, 7A
Voltage - Isolation: 2500Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 10ns, 15ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 30ns
Grade: Automotive
Number of Channels: 1
Voltage - Output Supply: 0V ~ 30V
Qualification: AEC-Q100
auf Bestellung 13990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.54 EUR
10+2.87 EUR
25+2.43 EUR
100+1.93 EUR
250+1.69 EUR
500+1.54 EUR
1000+1.42 EUR
Mindestbestellmenge: 4
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NSVMUN5216T1G dtc143t-d.pdf
NSVMUN5216T1G
Hersteller: onsemi
Description: NPN BIPOLAR DIGITAL TRANSISTOR (
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 93000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.064 EUR
6000+0.057 EUR
9000+0.054 EUR
15000+0.05 EUR
21000+0.048 EUR
30000+0.045 EUR
75000+0.04 EUR
Mindestbestellmenge: 3000
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NSVMUN5216T1G dtc143t-d.pdf
NSVMUN5216T1G
Hersteller: onsemi
Description: NPN BIPOLAR DIGITAL TRANSISTOR (
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SC-70-3 (SOT323)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 202 mW
Resistor - Base (R1): 4.7 kOhms
Qualification: AEC-Q101
auf Bestellung 93000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
Mindestbestellmenge: 56
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AR0234CSSC00SUKA0-CP1 ar0234cs?pdf=Y
AR0234CSSC00SUKA0-CP1
Hersteller: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Bulk
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+78.6 EUR
Mindestbestellmenge: 7
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AR0234CSSM00SUKA0-CP2
AR0234CSSM00SUKA0-CP2
Hersteller: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Produkt ist nicht verfügbar
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AR0234CSSM28SUKA0-CP2
AR0234CSSM28SUKA0-CP2
Hersteller: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tube
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Produkt ist nicht verfügbar
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AR0234CSSC28SUKA0-CP2
AR0234CSSC28SUKA0-CP2
Hersteller: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Produkt ist nicht verfügbar
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AR0234CSSC00SUKA0-CP2
AR0234CSSC00SUKA0-CP2
Hersteller: onsemi
Description: 2MP 1/3 CIS SO
Packaging: Tray
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Produkt ist nicht verfügbar
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AR0234CSSM00SUD20
Hersteller: onsemi
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Package / Case: Die
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: Die
Frames per Second: 120.0
Produkt ist nicht verfügbar
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AR0234CSSC28SUD20
Hersteller: onsemi
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Package / Case: Die
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: Die
Frames per Second: 120.0
Produkt ist nicht verfügbar
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AR0234CSSM28SUD20
Hersteller: onsemi
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Package / Case: Die
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: Die
Frames per Second: 120.0
Produkt ist nicht verfügbar
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AR0234CSSC00SUD20
AR0234CSSC00SUD20
Hersteller: onsemi
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Package / Case: 83-VFBGA, CSPBGA
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Supplier Device Package: 83-ODCSP (5.6x10)
Frames per Second: 120.0
Produkt ist nicht verfügbar
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AR0234AT3M28XUEA0-DRBR-E
Hersteller: onsemi
Description: 1/2.6-INCH 2.3 MP CMOS DIGITAL I
Packaging: Bulk
Type: CMOS
Pixel Size: 3µm x 3µm
Active Pixel Array: 1920H x 1200V
Grade: Automotive
Frames per Second: 120.0
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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FFSH2065BDN ffsh2065bdn-d.pdf
FFSH2065BDN
Hersteller: onsemi
Description: DIODE ARRAY SIC 650V 10A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 9577 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.65 EUR
10+5.14 EUR
450+3.68 EUR
900+3.13 EUR
1350+2.95 EUR
Mindestbestellmenge: 3
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FFSH2065B-F155 ffsh2065b-f155-d.pdf
FFSH2065B-F155
Hersteller: onsemi
Description: DIODE SIL CARB 650V 22.3A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 866pF @ 1V, 100kHz
Current - Average Rectified (Io): 22.3A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 3960 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.65 EUR
30+4.52 EUR
120+4.03 EUR
510+3.49 EUR
1020+2.99 EUR
Mindestbestellmenge: 3
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RFP15N05L RFP15N05L.pdf
RFP15N05L
Hersteller: onsemi
Description: MOSFET N-CH 50V 15A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 15A, 5V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Produkt ist nicht verfügbar
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NL7SZ19DFT2G-Q nl7sz19-d.pdf
NL7SZ19DFT2G-Q
Hersteller: onsemi
Description: 1:2 DIGITAL MULTIPLEXER / DEMULT
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 1:2
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Voltage Supply Source: Single Supply
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 186000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.081 EUR
6000+0.072 EUR
9000+0.067 EUR
15000+0.062 EUR
21000+0.059 EUR
30000+0.056 EUR
75000+0.05 EUR
150000+0.046 EUR
Mindestbestellmenge: 3000
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NL7SZ19DFT2G-Q nl7sz19-d.pdf
NL7SZ19DFT2G-Q
Hersteller: onsemi
Description: 1:2 DIGITAL MULTIPLEXER / DEMULT
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Circuit: 1 x 1:2
Type: Decoder/Demultiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 32mA, 32mA
Voltage Supply Source: Single Supply
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 188900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
68+0.26 EUR
83+0.21 EUR
113+0.16 EUR
250+0.13 EUR
500+0.11 EUR
1000+0.099 EUR
Mindestbestellmenge: 39
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