| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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NFA32512L72 | onsemi |
Description: IGBT IPM 1.2KV 25A 27-PWRDIP MODPackaging: Tube Package / Case: 27-PowerDIP Module, Offset Leads Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Inverter Voltage - Isolation: 2500Vrms Current: 25 A Voltage: 1.2 kV |
auf Bestellung 246 Stücke: Lieferzeit 10-14 Tag (e) |
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H11AV1SR2VM | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6SMDPackaging: Tape & Reel (TR) Package / Case: 6-SMD, Gull Wing Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.18V Input Type: DC Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 300% @ 10mA Supplier Device Package: 6-SMD Voltage - Output (Max): 70V Turn On / Turn Off Time (Typ): 15µs, 15µs (Max) Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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H11AV1SR2VM | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6SMDPackaging: Cut Tape (CT) Package / Case: 6-SMD, Gull Wing Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.18V Input Type: DC Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 300% @ 10mA Supplier Device Package: 6-SMD Voltage - Output (Max): 70V Turn On / Turn Off Time (Typ): 15µs, 15µs (Max) Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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H11AV1AVM | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6DIPPackaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.18V Input Type: DC Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 300% @ 10mA Supplier Device Package: 6-DIP Voltage - Output (Max): 70V Turn On / Turn Off Time (Typ): 15µs, 15µs (Max) Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 9547 Stücke: Lieferzeit 10-14 Tag (e) |
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H11AV1VM | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6DIPPackaging: Bulk Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.18V Input Type: DC Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 300% @ 10mA Supplier Device Package: 6-DIP Voltage - Output (Max): 70V Turn On / Turn Off Time (Typ): 15µs, 15µs (Max) Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 1994 Stücke: Lieferzeit 10-14 Tag (e) |
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LM2901NG | onsemi |
Description: IC COMPARATOR 4CH 14-PDIPPackaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Output Type: CMOS, Open-Collector, TTL Mounting Type: Through Hole Number of Elements: 4 Type: Standard (General Purpose) Operating Temperature: -40°C ~ 105°C Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V Supplier Device Package: 14-PDIP Current - Quiescent (Max): 2.5mA Voltage - Input Offset (Max): 7mV @ 5V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 16mA @ 5V |
auf Bestellung 5254 Stücke: Lieferzeit 10-14 Tag (e) |
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| NCP1568PDUHD60WGEVB | onsemi |
Description: EVAL BOARD FOR NCP1568Packaging: Bulk Voltage - Output: 20V Voltage - Input: 115VAC Current - Output: 3A Contents: Board(s) Regulator Topology: Flyback Utilized IC / Part: NCP1568 Main Purpose: AC/DC, Primary Side Outputs and Type: 1 Isolated Output Power - Output: 60W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NCP1568PDUHD90WGEVB | onsemi |
Description: EVAL BOARD FOR NCP1568Packaging: Bulk Voltage - Input: 90 ~ 264 VAC Contents: Board(s) Regulator Topology: Flyback Utilized IC / Part: NCP1568 Main Purpose: AC/DC, Primary Side Outputs and Type: 1 Isolated Output Power - Output: 90W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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NCP1568DD00DBR2G | onsemi |
Description: DC-DC ACTIVE CLAMP FLYBACK PWM CPackaging: Bulk Package / Case: 16-TSSOP (0.173", 4.40mm Width), 12 Leads Output Type: Transistor Driver Mounting Type: Surface Mount Function: Step-Up/Step-Down Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Frequency - Switching: 100kHz ~ 1MHz Topology: Flyback Voltage - Supply (Vcc/Vdd): 10V ~ 27V Supplier Device Package: 16-TSSOP Synchronous Rectifier: No Control Features: Dead Time Control, Frequency Control, Soft Start Output Phases: 1 Duty Cycle (Max): 96% Clock Sync: No Number of Outputs: 1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MC100EL07MNR4G | onsemi |
Description: IC XOR/XNOR GATE 1-CIR 8-DFN Packaging: Bulk Package / Case: 8-VFDFN Exposed Pad Output Type: Differential Mounting Type: Surface Mount Logic Type: XOR/XNOR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.2V ~ 5.7V Number of Inputs: 2 Schmitt Trigger Input: No Supplier Device Package: 8-DFN (2x2) Number of Circuits: 1 |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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MSD1328-ST1G | onsemi |
Description: TRANS NPN 20V 0.5A SC-59Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 200 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MSD1328-RT1G | onsemi |
Description: TRANS NPN 20V 0.5A SC-59Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V Supplier Device Package: SC-59 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 200 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NVBYST001N08XTXG | onsemi |
Description: MOSFET N-CH 80V 467A 16TCPAKPackaging: Tape & Reel (TR) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 467A (Tc) Rds On (Max) @ Id, Vgs: 1.19mOhm @ 80A, 10V Power Dissipation (Max): 517W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 475µA Supplier Device Package: 16-TCPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8678 pF @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NVBYST001N08XTXG | onsemi |
Description: MOSFET N-CH 80V 467A 16TCPAKPackaging: Cut Tape (CT) Package / Case: 16-PowerSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 467A (Tc) Rds On (Max) @ Id, Vgs: 1.19mOhm @ 80A, 10V Power Dissipation (Max): 517W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 475µA Supplier Device Package: 16-TCPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8678 pF @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SS9018FBU | onsemi |
Description: RF TRANS NPN 15V 1.1GHZ TO-92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 400mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 54 @ 1mA, 5V Frequency - Transition: 1.1GHz Supplier Device Package: TO-92-3 |
auf Bestellung 59900 Stücke: Lieferzeit 10-14 Tag (e) |
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1N4002GP | onsemi |
Description: DIODE STANDARD 100V 1A DO41Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BC557CZL1 | onsemi |
Description: TRANS PNP 45V 0.1A TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 320MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 625 mW |
auf Bestellung 57700 Stücke: Lieferzeit 10-14 Tag (e) |
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BC557BZL1 | onsemi |
Description: TRANS PNP 45V 0.1A TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Frequency - Transition: 320MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 625 mW |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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BC557CG | onsemi |
Description: TRANS PNP 45V 0.1A TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 320MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 625 mW |
auf Bestellung 110816 Stücke: Lieferzeit 10-14 Tag (e) |
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BC557CZL1G | onsemi |
Description: TRANS PNP 45V 0.1A TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 320MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 625 mW |
auf Bestellung 46148 Stücke: Lieferzeit 10-14 Tag (e) |
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BC557BRL1G | onsemi |
Description: TRANS PNP 45V 0.1A TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Frequency - Transition: 320MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 625 mW |
auf Bestellung 102620 Stücke: Lieferzeit 10-14 Tag (e) |
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BC557BZL1G | onsemi |
Description: TRANS PNP 45V 0.1A TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Frequency - Transition: 320MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 625 mW |
auf Bestellung 49500 Stücke: Lieferzeit 10-14 Tag (e) |
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BC557BG | onsemi |
Description: TRANS PNP 45V 0.1A TO92Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V Frequency - Transition: 320MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 625 mW |
auf Bestellung 17792 Stücke: Lieferzeit 10-14 Tag (e) |
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NTR5198NLT3G | onsemi |
Description: SINGLE N CHANNEL LOGIC LEVEL POWPackaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta) Rds On (Max) @ Id, Vgs: 155mOhm @ 1A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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2N3771G | onsemi |
Description: TRANS NPN 40V 30A TO204Packaging: Tray Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 6A, 30A Current - Collector Cutoff (Max): 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 4V Frequency - Transition: 200kHz Supplier Device Package: TO-204 (TO-3) Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 150 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC14512BD | onsemi |
Description: IC DATA SELECT/MUX 1X8:1 16-SOICPackaging: Tube Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Circuit: 1 x 8:1 Type: Data Selector/Multiplexer Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Independent Circuits: 1 Current - Output High, Low: 8.8mA, 8.8mA Voltage Supply Source: Single Supply Supplier Device Package: 16-SOIC |
auf Bestellung 1059 Stücke: Lieferzeit 10-14 Tag (e) |
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NDF04N60ZH | onsemi |
Description: MOSFET N-CH 600V 4.8A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-220-2 Full Pack Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V |
auf Bestellung 134255 Stücke: Lieferzeit 10-14 Tag (e) |
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NDF04N60ZG | onsemi |
Description: MOSFET N-CH 600V 4.8A TO220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-220FP Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V |
auf Bestellung 51457 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFSC1D9N08XTWG | onsemi |
Description: MOSFET POWERTRENCH T10, SINGLE,Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 201A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 164W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 252µA Supplier Device Package: 8-DFN (5x6.15) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4470 pF @ 40 V |
auf Bestellung 2745 Stücke: Lieferzeit 10-14 Tag (e) |
Mindestbestellmenge: 2745 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NTMFSC1D9N08XTWG | onsemi |
Description: MOSFET POWERTRENCH T10, SINGLE,Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 201A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V Power Dissipation (Max): 164W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 252µA Supplier Device Package: 8-DFN (5x6.15) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4470 pF @ 40 V |
auf Bestellung 3764 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBT2907AWT1G | onsemi |
Description: TRANS PNP 60V 0.6A SC70-3Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: SC-70-3 (SOT323) Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 150 mW |
auf Bestellung 926734 Stücke: Lieferzeit 10-14 Tag (e) |
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MM74HCT74M | onsemi |
Description: IC FF D-TYPE 2-ELE 1-BIT 14-SOICPackaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 2 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Current - Quiescent (Iq): 2 µA Current - Output High, Low: 4.8mA, 4.8mA Trigger Type: Positive Edge Clock Frequency: 27 MHz Input Capacitance: 5 pF Supplier Device Package: 14-SOIC Max Propagation Delay @ V, Max CL: 35ns @ 5V, 50pF Number of Bits per Element: 1 |
auf Bestellung 117450 Stücke: Lieferzeit 10-14 Tag (e) |
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BC556BTFR | onsemi |
Description: TRANS PNP 65V 0.1A TO-92-3Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BC556BTFR | onsemi |
Description: TRANS PNP 65V 0.1A TO-92-3Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 65 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MM5Z8V2T5G | onsemi |
Description: DIODE ZENER 8.2V 500MW SOD523Packaging: Tape & Reel (TR) Tolerance: ±6.1% Package / Case: SC-79, SOD-523 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 8.2 V Impedance (Max) (Zzt): 15 Ohms Supplier Device Package: SOD-523 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 700 nA @ 5 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| LV23401V-TLM-H | onsemi |
Description: 1-CHIP TUNER IC INCORPORATING FLPackaging: Bulk Package / Case: 30-LSSOP (0.220", 5.60mm Width) Mounting Type: Surface Mount Function: Tuner Frequency: 76MHz ~ 108MHz RF Type: AM, FM Supplier Device Package: 30-SSOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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74ABT541CSCX | onsemi |
Description: IC BUFF NON-INVERT 5.5V 20-SOICPackaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 8 Current - Output High, Low: 32mA, 64mA Supplier Device Package: 20-SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NTLUS4195PZTBG | onsemi |
Description: MOSFET P-CH 30V 2A 6UDFNPackaging: Bulk Package / Case: 6-PowerUFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-UDFN (1.6x1.6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 15 V |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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BD138 | onsemi |
Description: TRANS PNP 60V 1.5A TO-126Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 1.5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.25 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NTS8100MFST3G | onsemi |
Description: DIODE SCHOTTKY 100V 8A 5DFNPackaging: Bulk Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 8A Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 730 mV @ 8 A Current - Reverse Leakage @ Vr: 70 µA @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NTS8100MFST1G | onsemi |
Description: DIODE SCHOTTKY 100V 8A 5DFNPackaging: Bulk Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 8A Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 730 mV @ 8 A Current - Reverse Leakage @ Vr: 70 µA @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FQP3N80C | onsemi |
Description: MOSFET N-CH 800V 3A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BD680 | onsemi |
Description: TRANS PNP DARL 80V 4A TO-126Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 40 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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2SK2628LS | onsemi |
Description: N-CHANNEL SILICON MOSFETPackaging: Bulk |
auf Bestellung 5657 Stücke: Lieferzeit 10-14 Tag (e) |
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2SK2624LS-CD11 | onsemi |
Description: N-CHANNEL SILICON MOSFETPackaging: Bulk |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN4801SMY | onsemi |
Description: IC PFC CTR AV CURR 268KHZ 16SOPPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Voltage - Supply: 11V ~ 26V Frequency - Switching: 240kHz ~ 268kHz Mode: Average Current Supplier Device Package: 16-SOIC Current - Startup: 30 µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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ES1JFL | onsemi |
Description: DIODE STANDARD 600V 1A SOD123FPackaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 600 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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ES1JFL | onsemi |
Description: DIODE STANDARD 600V 1A SOD123FPackaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 7pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NOIH2SM1000T-HHC | onsemi |
Description: HIGH ACCURACY STAR TRACKER CMOSPackaging: Bulk Package / Case: 84-CLCC Window (J-Lead) Type: CMOS Pixel Size: 18µm x 18µm Active Pixel Array: 1024H x 1024V Supplier Device Package: 84-JLCC (29.21x29.21) Frames per Second: 4.0 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NOIS1SM1000A-HWC | onsemi |
Description: CMOS IMAGE SENSOR, 1 MP, RADIATIPackaging: Bulk Package / Case: 84-CLCC Window (J-Lead) Type: CMOS Operating Temperature: -40°C ~ 85°C Voltage - Supply: 5.5V Pixel Size: 15µm x 15µm Active Pixel Array: 1024H x 1024V Supplier Device Package: 84-JLCC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NOIS1SM1000S-HWC | onsemi |
Description: CMOS IMAGE SENSOR, 1 MP, RADIATIPackaging: Bulk Package / Case: 84-CLCC Window (J-Lead) Type: CMOS Pixel Size: 15µm x 15µm Active Pixel Array: 1024H x 1024V Supplier Device Package: 84-JLCC (29.21x29.21) Frames per Second: 11.0 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MC100EP31DG | onsemi |
Description: IC FF D-TYPE SINGLE 1BIT 8-SOICPackaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 1 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: -3V ~ -5.5V Current - Quiescent (Iq): 45 mA Trigger Type: Positive Edge Clock Frequency: 3 GHz Supplier Device Package: 8-SOIC Number of Bits per Element: 1 |
auf Bestellung 26999 Stücke: Lieferzeit 10-14 Tag (e) |
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LB1848M-TRM-H | onsemi |
Description: BIDIRECTIONAL MOTOR DRIVERPackaging: Bulk |
auf Bestellung 1370 Stücke: Lieferzeit 10-14 Tag (e) |
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MC33063AVP | onsemi |
Description: IC REG BUCK BOOST ADJ 1.5A 8PDIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Output Type: Adjustable Mounting Type: Through Hole Number of Outputs: 1 Function: Step-Up, Step-Down Current - Output: 1.5A (Switch) Operating Temperature: -40°C ~ 125°C (TA) Output Configuration: Positive or Negative Frequency - Switching: 100kHz Voltage - Input (Max): 40V Topology: Buck, Boost Supplier Device Package: 8-PDIP Synchronous Rectifier: No Voltage - Output (Max): 40V (Switch) Voltage - Input (Min): 3V Voltage - Output (Min/Fixed): 1.25V |
auf Bestellung 129772 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP1342AMDCDDD1R2G | onsemi |
Description: HIGH FREQUENCY QUASI-RESONANT FLPackage / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads Mounting Type: Surface Mount Supplier Device Package: 9-SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FOD3184TSR2 | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8SMDPackaging: Tape & Reel (TR) Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.43V Current - Peak Output: 3A Technology: Optical Coupling Current - Output High, Low: 2.5A, 2.5A Voltage - Isolation: 5000Vrms Approval Agency: UL Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 38ns, 24ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 210ns, 210ns Pulse Width Distortion (Max): 65ns Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 15V ~ 30V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 700 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| MC74HCT125ADG | onsemi |
Description: IC BUFF 2V/6V 14-SOIC Packaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 4 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Number of Bits per Element: 1 Current - Output High, Low: 6mA, 6mA Supplier Device Package: 14-SOIC |
auf Bestellung 107660 Stücke: Lieferzeit 10-14 Tag (e) |
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TL431BCP | onsemi |
Description: IC VREF SHUNT ADJ 0.4% 8DIPPackaging: Tube Tolerance: ±0.4% Package / Case: 8-DIP (0.300", 7.62mm) Temperature Coefficient: 50ppm/°C Typical Output Type: Adjustable Mounting Type: Through Hole Reference Type: Shunt Operating Temperature: 0°C ~ 70°C (TA) Supplier Device Package: 8-PDIP Voltage - Output (Min/Fixed): 2.495V Current - Cathode: 1 mA Current - Output: 100 mA Voltage - Output (Max): 36 V |
auf Bestellung 39027 Stücke: Lieferzeit 10-14 Tag (e) |
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TL431BCP | onsemi |
Description: IC VREF SHUNT ADJ 0.4% 8DIPPackaging: Tube Tolerance: ±0.4% Package / Case: 8-DIP (0.300", 7.62mm) Temperature Coefficient: 50ppm/°C Typical Output Type: Adjustable Mounting Type: Through Hole Reference Type: Shunt Operating Temperature: 0°C ~ 70°C (TA) Supplier Device Package: 8-PDIP Voltage - Output (Min/Fixed): 2.495V Current - Cathode: 1 mA Current - Output: 100 mA Voltage - Output (Max): 36 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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TL431BVLPRAG | onsemi |
Description: IC VREF SHUNT ADJ 0.4% TO92Packaging: Bulk Tolerance: ±0.4% Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Temperature Coefficient: 50ppm/°C Typical Output Type: Adjustable Mounting Type: Through Hole Reference Type: Shunt Operating Temperature: -40°C ~ 125°C (TA) Supplier Device Package: TO-92 (TO-226) Voltage - Output (Min/Fixed): 2.495V Current - Cathode: 1 mA Current - Output: 100 mA Voltage - Output (Max): 36 V |
auf Bestellung 70556 Stücke: Lieferzeit 10-14 Tag (e) |
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| NFA32512L72 |
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Hersteller: onsemi
Description: IGBT IPM 1.2KV 25A 27-PWRDIP MOD
Packaging: Tube
Package / Case: 27-PowerDIP Module, Offset Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Current: 25 A
Voltage: 1.2 kV
Description: IGBT IPM 1.2KV 25A 27-PWRDIP MOD
Packaging: Tube
Package / Case: 27-PowerDIP Module, Offset Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase Inverter
Voltage - Isolation: 2500Vrms
Current: 25 A
Voltage: 1.2 kV
auf Bestellung 246 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 64.53 EUR |
| 10+ | 47.84 EUR |
| 100+ | 42.49 EUR |
| H11AV1SR2VM |
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Hersteller: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 15µs, 15µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 15µs, 15µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| H11AV1SR2VM |
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Hersteller: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 15µs, 15µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 15µs, 15µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| H11AV1AVM |
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Hersteller: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 15µs, 15µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 15µs, 15µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 9547 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 1.32 EUR |
| 50+ | 0.73 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.56 EUR |
| 1000+ | 0.51 EUR |
| 2000+ | 0.49 EUR |
| 5000+ | 0.45 EUR |
| H11AV1VM |
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Hersteller: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 15µs, 15µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 15µs, 15µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 1994 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.27 EUR |
| 24+ | 0.88 EUR |
| 100+ | 0.64 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.5 EUR |
| LM2901NG |
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Hersteller: onsemi
Description: IC COMPARATOR 4CH 14-PDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: CMOS, Open-Collector, TTL
Mounting Type: Through Hole
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 14-PDIP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Description: IC COMPARATOR 4CH 14-PDIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: CMOS, Open-Collector, TTL
Mounting Type: Through Hole
Number of Elements: 4
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 105°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 14-PDIP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
auf Bestellung 5254 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1179+ | 0.45 EUR |
| NCP1568PDUHD60WGEVB |
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Hersteller: onsemi
Description: EVAL BOARD FOR NCP1568
Packaging: Bulk
Voltage - Output: 20V
Voltage - Input: 115VAC
Current - Output: 3A
Contents: Board(s)
Regulator Topology: Flyback
Utilized IC / Part: NCP1568
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Power - Output: 60W
Description: EVAL BOARD FOR NCP1568
Packaging: Bulk
Voltage - Output: 20V
Voltage - Input: 115VAC
Current - Output: 3A
Contents: Board(s)
Regulator Topology: Flyback
Utilized IC / Part: NCP1568
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Power - Output: 60W
Produkt ist nicht verfügbar
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| NCP1568PDUHD90WGEVB |
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Hersteller: onsemi
Description: EVAL BOARD FOR NCP1568
Packaging: Bulk
Voltage - Input: 90 ~ 264 VAC
Contents: Board(s)
Regulator Topology: Flyback
Utilized IC / Part: NCP1568
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Power - Output: 90W
Description: EVAL BOARD FOR NCP1568
Packaging: Bulk
Voltage - Input: 90 ~ 264 VAC
Contents: Board(s)
Regulator Topology: Flyback
Utilized IC / Part: NCP1568
Main Purpose: AC/DC, Primary Side
Outputs and Type: 1 Isolated Output
Power - Output: 90W
Produkt ist nicht verfügbar
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| NCP1568DD00DBR2G |
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Hersteller: onsemi
Description: DC-DC ACTIVE CLAMP FLYBACK PWM C
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width), 12 Leads
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 1MHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: 16-TSSOP
Synchronous Rectifier: No
Control Features: Dead Time Control, Frequency Control, Soft Start
Output Phases: 1
Duty Cycle (Max): 96%
Clock Sync: No
Number of Outputs: 1
Description: DC-DC ACTIVE CLAMP FLYBACK PWM C
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width), 12 Leads
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Up/Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 100kHz ~ 1MHz
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 27V
Supplier Device Package: 16-TSSOP
Synchronous Rectifier: No
Control Features: Dead Time Control, Frequency Control, Soft Start
Output Phases: 1
Duty Cycle (Max): 96%
Clock Sync: No
Number of Outputs: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MC100EL07MNR4G |
Hersteller: onsemi
Description: IC XOR/XNOR GATE 1-CIR 8-DFN
Packaging: Bulk
Package / Case: 8-VFDFN Exposed Pad
Output Type: Differential
Mounting Type: Surface Mount
Logic Type: XOR/XNOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.2V ~ 5.7V
Number of Inputs: 2
Schmitt Trigger Input: No
Supplier Device Package: 8-DFN (2x2)
Number of Circuits: 1
Description: IC XOR/XNOR GATE 1-CIR 8-DFN
Packaging: Bulk
Package / Case: 8-VFDFN Exposed Pad
Output Type: Differential
Mounting Type: Surface Mount
Logic Type: XOR/XNOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.2V ~ 5.7V
Number of Inputs: 2
Schmitt Trigger Input: No
Supplier Device Package: 8-DFN (2x2)
Number of Circuits: 1
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 81+ | 6.65 EUR |
| MSD1328-ST1G |
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Hersteller: onsemi
Description: TRANS NPN 20V 0.5A SC-59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Description: TRANS NPN 20V 0.5A SC-59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 500mA, 2V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MSD1328-RT1G |
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Hersteller: onsemi
Description: TRANS NPN 20V 0.5A SC-59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Description: TRANS NPN 20V 0.5A SC-59
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Supplier Device Package: SC-59
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 200 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NVBYST001N08XTXG |
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Hersteller: onsemi
Description: MOSFET N-CH 80V 467A 16TCPAK
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 467A (Tc)
Rds On (Max) @ Id, Vgs: 1.19mOhm @ 80A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 475µA
Supplier Device Package: 16-TCPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8678 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 467A 16TCPAK
Packaging: Tape & Reel (TR)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 467A (Tc)
Rds On (Max) @ Id, Vgs: 1.19mOhm @ 80A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 475µA
Supplier Device Package: 16-TCPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8678 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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| NVBYST001N08XTXG |
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Hersteller: onsemi
Description: MOSFET N-CH 80V 467A 16TCPAK
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 467A (Tc)
Rds On (Max) @ Id, Vgs: 1.19mOhm @ 80A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 475µA
Supplier Device Package: 16-TCPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8678 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 467A 16TCPAK
Packaging: Cut Tape (CT)
Package / Case: 16-PowerSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 467A (Tc)
Rds On (Max) @ Id, Vgs: 1.19mOhm @ 80A, 10V
Power Dissipation (Max): 517W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 475µA
Supplier Device Package: 16-TCPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8678 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
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| SS9018FBU |
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Hersteller: onsemi
Description: RF TRANS NPN 15V 1.1GHZ TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 54 @ 1mA, 5V
Frequency - Transition: 1.1GHz
Supplier Device Package: TO-92-3
Description: RF TRANS NPN 15V 1.1GHZ TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Power - Max: 400mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 15V
DC Current Gain (hFE) (Min) @ Ic, Vce: 54 @ 1mA, 5V
Frequency - Transition: 1.1GHz
Supplier Device Package: TO-92-3
auf Bestellung 59900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9412+ | 0.055 EUR |
| 1N4002GP |
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Hersteller: onsemi
Description: DIODE STANDARD 100V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE STANDARD 100V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 25000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BC557CZL1 |
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Hersteller: onsemi
Description: TRANS PNP 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 320MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Description: TRANS PNP 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 320MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
auf Bestellung 57700 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4537+ | 0.13 EUR |
| BC557BZL1 |
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Hersteller: onsemi
Description: TRANS PNP 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 320MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Description: TRANS PNP 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 320MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4537+ | 0.13 EUR |
| BC557CG |
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Hersteller: onsemi
Description: TRANS PNP 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 320MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Description: TRANS PNP 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 320MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
auf Bestellung 110816 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2273+ | 0.24 EUR |
| BC557CZL1G |
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Hersteller: onsemi
Description: TRANS PNP 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 320MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Description: TRANS PNP 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 320MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
auf Bestellung 46148 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2273+ | 0.24 EUR |
| BC557BRL1G |
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Hersteller: onsemi
Description: TRANS PNP 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 320MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Description: TRANS PNP 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 320MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
auf Bestellung 102620 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1817+ | 0.31 EUR |
| BC557BZL1G |
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Hersteller: onsemi
Description: TRANS PNP 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 320MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Description: TRANS PNP 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 320MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
auf Bestellung 49500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1817+ | 0.31 EUR |
| BC557BG |
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Hersteller: onsemi
Description: TRANS PNP 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 320MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
Description: TRANS PNP 45V 0.1A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Frequency - Transition: 320MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 625 mW
auf Bestellung 17792 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1817+ | 0.31 EUR |
| NTR5198NLT3G |
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Hersteller: onsemi
Description: SINGLE N CHANNEL LOGIC LEVEL POW
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 1A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 25 V
Description: SINGLE N CHANNEL LOGIC LEVEL POW
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 155mOhm @ 1A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 182 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 2N3771G |
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Hersteller: onsemi
Description: TRANS NPN 40V 30A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 6A, 30A
Current - Collector Cutoff (Max): 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 4V
Frequency - Transition: 200kHz
Supplier Device Package: TO-204 (TO-3)
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 W
Description: TRANS NPN 40V 30A TO204
Packaging: Tray
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 6A, 30A
Current - Collector Cutoff (Max): 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 15A, 4V
Frequency - Transition: 200kHz
Supplier Device Package: TO-204 (TO-3)
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 150 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC14512BD |
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Hersteller: onsemi
Description: IC DATA SELECT/MUX 1X8:1 16-SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:1
Type: Data Selector/Multiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 1
Current - Output High, Low: 8.8mA, 8.8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOIC
Description: IC DATA SELECT/MUX 1X8:1 16-SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:1
Type: Data Selector/Multiplexer
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 1
Current - Output High, Low: 8.8mA, 8.8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOIC
auf Bestellung 1059 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 790+ | 0.69 EUR |
| NDF04N60ZH |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 4.8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-2 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Description: MOSFET N-CH 600V 4.8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220-2 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
auf Bestellung 134255 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 673+ | 0.82 EUR |
| NDF04N60ZG |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 4.8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Description: MOSFET N-CH 600V 4.8A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-220FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
auf Bestellung 51457 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 550+ | 1.01 EUR |
| NTMFSC1D9N08XTWG |
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Hersteller: onsemi
Description: MOSFET POWERTRENCH T10, SINGLE,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 201A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 252µA
Supplier Device Package: 8-DFN (5x6.15)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4470 pF @ 40 V
Description: MOSFET POWERTRENCH T10, SINGLE,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 201A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 252µA
Supplier Device Package: 8-DFN (5x6.15)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4470 pF @ 40 V
auf Bestellung 2745 Stücke:
Lieferzeit 10-14 Tag (e)
| NTMFSC1D9N08XTWG |
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Hersteller: onsemi
Description: MOSFET POWERTRENCH T10, SINGLE,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 201A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 252µA
Supplier Device Package: 8-DFN (5x6.15)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4470 pF @ 40 V
Description: MOSFET POWERTRENCH T10, SINGLE,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 201A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 50A, 10V
Power Dissipation (Max): 164W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 252µA
Supplier Device Package: 8-DFN (5x6.15)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4470 pF @ 40 V
auf Bestellung 3764 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.81 EUR |
| 10+ | 4.44 EUR |
| 100+ | 3.09 EUR |
| 500+ | 2.52 EUR |
| 1000+ | 2.5 EUR |
| MMBT2907AWT1G |
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Hersteller: onsemi
Description: TRANS PNP 60V 0.6A SC70-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 150 mW
Description: TRANS PNP 60V 0.6A SC70-3
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SC-70-3 (SOT323)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 150 mW
auf Bestellung 926734 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12183+ | 0.037 EUR |
| MM74HCT74M |
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Hersteller: onsemi
Description: IC FF D-TYPE 2-ELE 1-BIT 14-SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 4.8mA, 4.8mA
Trigger Type: Positive Edge
Clock Frequency: 27 MHz
Input Capacitance: 5 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 35ns @ 5V, 50pF
Number of Bits per Element: 1
Description: IC FF D-TYPE 2-ELE 1-BIT 14-SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 2
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Current - Quiescent (Iq): 2 µA
Current - Output High, Low: 4.8mA, 4.8mA
Trigger Type: Positive Edge
Clock Frequency: 27 MHz
Input Capacitance: 5 pF
Supplier Device Package: 14-SOIC
Max Propagation Delay @ V, Max CL: 35ns @ 5V, 50pF
Number of Bits per Element: 1
auf Bestellung 117450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 0.96 EUR |
| 31+ | 0.68 EUR |
| 55+ | 0.56 EUR |
| 110+ | 0.52 EUR |
| 275+ | 0.49 EUR |
| 550+ | 0.46 EUR |
| 1045+ | 0.45 EUR |
| 2530+ | 0.43 EUR |
| 5005+ | 0.42 EUR |
| BC556BTFR |
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Hersteller: onsemi
Description: TRANS PNP 65V 0.1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Description: TRANS PNP 65V 0.1A TO-92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BC556BTFR |
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Hersteller: onsemi
Description: TRANS PNP 65V 0.1A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Description: TRANS PNP 65V 0.1A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MM5Z8V2T5G |
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Hersteller: onsemi
Description: DIODE ZENER 8.2V 500MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±6.1%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Description: DIODE ZENER 8.2V 500MW SOD523
Packaging: Tape & Reel (TR)
Tolerance: ±6.1%
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-523
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 700 nA @ 5 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LV23401V-TLM-H |
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Hersteller: onsemi
Description: 1-CHIP TUNER IC INCORPORATING FL
Packaging: Bulk
Package / Case: 30-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Function: Tuner
Frequency: 76MHz ~ 108MHz
RF Type: AM, FM
Supplier Device Package: 30-SSOP
Description: 1-CHIP TUNER IC INCORPORATING FL
Packaging: Bulk
Package / Case: 30-LSSOP (0.220", 5.60mm Width)
Mounting Type: Surface Mount
Function: Tuner
Frequency: 76MHz ~ 108MHz
RF Type: AM, FM
Supplier Device Package: 30-SSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74ABT541CSCX |
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Hersteller: onsemi
Description: IC BUFF NON-INVERT 5.5V 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 20-SOIC
Description: IC BUFF NON-INVERT 5.5V 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 32mA, 64mA
Supplier Device Package: 20-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTLUS4195PZTBG |
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Hersteller: onsemi
Description: MOSFET P-CH 30V 2A 6UDFN
Packaging: Bulk
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 15 V
Description: MOSFET P-CH 30V 2A 6UDFN
Packaging: Bulk
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 10V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 15 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 865+ | 0.63 EUR |
| BD138 |
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Hersteller: onsemi
Description: TRANS PNP 60V 1.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.25 W
Description: TRANS PNP 60V 1.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.25 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTS8100MFST3G |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 8A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
Description: DIODE SCHOTTKY 100V 8A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTS8100MFST1G |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 8A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
Description: DIODE SCHOTTKY 100V 8A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
Produkt ist nicht verfügbar
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| FQP3N80C |
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Hersteller: onsemi
Description: MOSFET N-CH 800V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 25 V
Description: MOSFET N-CH 800V 3A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 705 pF @ 25 V
Produkt ist nicht verfügbar
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| BD680 |
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Hersteller: onsemi
Description: TRANS PNP DARL 80V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
Description: TRANS PNP DARL 80V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 1.5A, 3V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 40 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| 2SK2628LS |
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auf Bestellung 5657 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 454+ | 1.19 EUR |
| 2SK2624LS-CD11 |
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auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 252+ | 2.13 EUR |
| FAN4801SMY |
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Hersteller: onsemi
Description: IC PFC CTR AV CURR 268KHZ 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 11V ~ 26V
Frequency - Switching: 240kHz ~ 268kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Current - Startup: 30 µA
Description: IC PFC CTR AV CURR 268KHZ 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 11V ~ 26V
Frequency - Switching: 240kHz ~ 268kHz
Mode: Average Current
Supplier Device Package: 16-SOIC
Current - Startup: 30 µA
Produkt ist nicht verfügbar
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| ES1JFL |
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Hersteller: onsemi
Description: DIODE STANDARD 600V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Description: DIODE STANDARD 600V 1A SOD123F
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| ES1JFL |
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Hersteller: onsemi
Description: DIODE STANDARD 600V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Description: DIODE STANDARD 600V 1A SOD123F
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Produkt ist nicht verfügbar
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| NOIH2SM1000T-HHC |
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Hersteller: onsemi
Description: HIGH ACCURACY STAR TRACKER CMOS
Packaging: Bulk
Package / Case: 84-CLCC Window (J-Lead)
Type: CMOS
Pixel Size: 18µm x 18µm
Active Pixel Array: 1024H x 1024V
Supplier Device Package: 84-JLCC (29.21x29.21)
Frames per Second: 4.0
Description: HIGH ACCURACY STAR TRACKER CMOS
Packaging: Bulk
Package / Case: 84-CLCC Window (J-Lead)
Type: CMOS
Pixel Size: 18µm x 18µm
Active Pixel Array: 1024H x 1024V
Supplier Device Package: 84-JLCC (29.21x29.21)
Frames per Second: 4.0
Produkt ist nicht verfügbar
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| NOIS1SM1000A-HWC |
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Hersteller: onsemi
Description: CMOS IMAGE SENSOR, 1 MP, RADIATI
Packaging: Bulk
Package / Case: 84-CLCC Window (J-Lead)
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5.5V
Pixel Size: 15µm x 15µm
Active Pixel Array: 1024H x 1024V
Supplier Device Package: 84-JLCC
Description: CMOS IMAGE SENSOR, 1 MP, RADIATI
Packaging: Bulk
Package / Case: 84-CLCC Window (J-Lead)
Type: CMOS
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 5.5V
Pixel Size: 15µm x 15µm
Active Pixel Array: 1024H x 1024V
Supplier Device Package: 84-JLCC
Produkt ist nicht verfügbar
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| NOIS1SM1000S-HWC |
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Hersteller: onsemi
Description: CMOS IMAGE SENSOR, 1 MP, RADIATI
Packaging: Bulk
Package / Case: 84-CLCC Window (J-Lead)
Type: CMOS
Pixel Size: 15µm x 15µm
Active Pixel Array: 1024H x 1024V
Supplier Device Package: 84-JLCC (29.21x29.21)
Frames per Second: 11.0
Description: CMOS IMAGE SENSOR, 1 MP, RADIATI
Packaging: Bulk
Package / Case: 84-CLCC Window (J-Lead)
Type: CMOS
Pixel Size: 15µm x 15µm
Active Pixel Array: 1024H x 1024V
Supplier Device Package: 84-JLCC (29.21x29.21)
Frames per Second: 11.0
Produkt ist nicht verfügbar
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| MC100EP31DG |
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Hersteller: onsemi
Description: IC FF D-TYPE SINGLE 1BIT 8-SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: -3V ~ -5.5V
Current - Quiescent (Iq): 45 mA
Trigger Type: Positive Edge
Clock Frequency: 3 GHz
Supplier Device Package: 8-SOIC
Number of Bits per Element: 1
Description: IC FF D-TYPE SINGLE 1BIT 8-SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: -3V ~ -5.5V
Current - Quiescent (Iq): 45 mA
Trigger Type: Positive Edge
Clock Frequency: 3 GHz
Supplier Device Package: 8-SOIC
Number of Bits per Element: 1
auf Bestellung 26999 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 34+ | 15.77 EUR |
| LB1848M-TRM-H |
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auf Bestellung 1370 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 202+ | 2.69 EUR |
| MC33063AVP |
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Hersteller: onsemi
Description: IC REG BUCK BOOST ADJ 1.5A 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Up, Step-Down
Current - Output: 1.5A (Switch)
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive or Negative
Frequency - Switching: 100kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost
Supplier Device Package: 8-PDIP
Synchronous Rectifier: No
Voltage - Output (Max): 40V (Switch)
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 1.25V
Description: IC REG BUCK BOOST ADJ 1.5A 8PDIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Up, Step-Down
Current - Output: 1.5A (Switch)
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Positive or Negative
Frequency - Switching: 100kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost
Supplier Device Package: 8-PDIP
Synchronous Rectifier: No
Voltage - Output (Max): 40V (Switch)
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 1.25V
auf Bestellung 129772 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 699+ | 0.79 EUR |
| NCP1342AMDCDDD1R2G |
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Hersteller: onsemi
Description: HIGH FREQUENCY QUASI-RESONANT FL
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Supplier Device Package: 9-SOIC
Description: HIGH FREQUENCY QUASI-RESONANT FL
Package / Case: 10-SOP (0.154", 3.90mm Width), 9 Leads
Mounting Type: Surface Mount
Supplier Device Package: 9-SOIC
Produkt ist nicht verfügbar
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| FOD3184TSR2 |
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Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 38ns, 24ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Pulse Width Distortion (Max): 65ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
Mindestbestellmenge: 700 Stücke
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| MC74HCT125ADG |
Hersteller: onsemi
Description: IC BUFF 2V/6V 14-SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 14-SOIC
Description: IC BUFF 2V/6V 14-SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 1
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 14-SOIC
auf Bestellung 107660 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 55.29 EUR |
| TL431BCP |
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Hersteller: onsemi
Description: IC VREF SHUNT ADJ 0.4% 8DIP
Packaging: Tube
Tolerance: ±0.4%
Package / Case: 8-DIP (0.300", 7.62mm)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: 8-PDIP
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT ADJ 0.4% 8DIP
Packaging: Tube
Tolerance: ±0.4%
Package / Case: 8-DIP (0.300", 7.62mm)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: 8-PDIP
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
auf Bestellung 39027 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1372+ | 0.4 EUR |
| TL431BCP |
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Hersteller: onsemi
Description: IC VREF SHUNT ADJ 0.4% 8DIP
Packaging: Tube
Tolerance: ±0.4%
Package / Case: 8-DIP (0.300", 7.62mm)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: 8-PDIP
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT ADJ 0.4% 8DIP
Packaging: Tube
Tolerance: ±0.4%
Package / Case: 8-DIP (0.300", 7.62mm)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: 8-PDIP
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Produkt ist nicht verfügbar
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| TL431BVLPRAG |
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Hersteller: onsemi
Description: IC VREF SHUNT ADJ 0.4% TO92
Packaging: Bulk
Tolerance: ±0.4%
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: TO-92 (TO-226)
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT ADJ 0.4% TO92
Packaging: Bulk
Tolerance: ±0.4%
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C (TA)
Supplier Device Package: TO-92 (TO-226)
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
auf Bestellung 70556 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1137+ | 0.48 EUR |



































