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NTTFD1D8N02P1E

NTTFD1D8N02P1E onsemi

NTTFD1D8N02P1E-D.PDF Hersteller: onsemi
Description: MOSFET, POWER, 25V DUAL N-CHANNE
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW (Ta), 900mW (Ta)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 21A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 873pF @ 15V, 2700pF @ 15V
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 15A, 10V, 1.4mOhm @ 29A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V, 17nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 190µA, 2V @ 310µA
Supplier Device Package: 8-PQFN (3.3x3.3)
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.4 EUR
10+2.17 EUR
100+1.48 EUR
500+1.18 EUR
1000+1.08 EUR
3000+0.96 EUR
6000+0.93 EUR
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Technische Details NTTFD1D8N02P1E onsemi

Description: MOSFET, POWER, 25V DUAL N-CHANNE, Packaging: Bulk, Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 800mW (Ta), 900mW (Ta), Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 21A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 873pF @ 15V, 2700pF @ 15V, Rds On (Max) @ Id, Vgs: 4.2mOhm @ 15A, 10V, 1.4mOhm @ 29A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V, 17nC @ 4.5V, Vgs(th) (Max) @ Id: 2V @ 190µA, 2V @ 310µA, Supplier Device Package: 8-PQFN (3.3x3.3).