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NTMFS4D0N08XT1G NTMFS4D0N08XT1G onsemi ntmfs4d0n08x-d.pdf Description: T10 80V STD NCH MOSFET SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 27A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 133µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 40 V
Produkt ist nicht verfügbar
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NTMFS4D0N08XT1G NTMFS4D0N08XT1G onsemi ntmfs4d0n08x-d.pdf Description: T10 80V STD NCH MOSFET SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 27A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 133µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 40 V
auf Bestellung 753 Stücke:
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12+1.56 EUR
100+1.35 EUR
500+1.23 EUR
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NTMFS3D0N08XT1G NTMFS3D0N08XT1G onsemi ntmfs3d0n08x-d.pdf Description: T10 80V STD NCH MOSFET SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 37A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 184µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 40 V
auf Bestellung 63000 Stücke:
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NTMFS3D0N08XT1G NTMFS3D0N08XT1G onsemi ntmfs3d0n08x-d.pdf Description: T10 80V STD NCH MOSFET SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 37A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 184µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 40 V
auf Bestellung 63979 Stücke:
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NTMFD5C466NLT1G NTMFD5C466NLT1G onsemi ntmfd5c466nl-d.pdf Description: MOSFET 2N-CH 40V 14A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 25V
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
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NTMFD5C466NLT1G NTMFD5C466NLT1G onsemi ntmfd5c466nl-d.pdf Description: MOSFET 2N-CH 40V 14A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 25V
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
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NVMFS6H836NT3G NVMFS6H836NT3G onsemi nvmfs6h836n-d.pdf Description: T8 80V SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
Qualification: AEC-Q101
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NVMFS6H836NT3G NVMFS6H836NT3G onsemi nvmfs6h836n-d.pdf Description: T8 80V SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 3970 Stücke:
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100+1.28 EUR
500+1.02 EUR
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NLV74VHCT00ADTR2G NLV74VHCT00ADTR2G onsemi Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.4V ~ 2V
Input Logic Level - Low: 0.53V ~ 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
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NLV74VHCT00ADTR2G NLV74VHCT00ADTR2G onsemi Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.4V ~ 2V
Input Logic Level - Low: 0.53V ~ 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
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1N6287AG 1N6287AG onsemi ONSMS21119-1.pdf?t.download=true&u=5oefqw Description: TVS DIODE 40.2VWM 64.8VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
auf Bestellung 1800 Stücke:
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FSD176MRTLDTU FSD176MRTLDTU onsemi FSD176MRTLDTU.pdf Description: IC OFFLINE SW FLBACK TO220F-6L
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 67%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V
Supplier Device Package: TO-220F-6L (L-Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Power (Watts): 90 W
Produkt ist nicht verfügbar
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GBPC3510W GBPC3510W onsemi gbpc3510-d.pdf Description: BRIDGE RECT 1P 1KV 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 192 Stücke:
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NTMFC013NP10M5L NTMFC013NP10M5L onsemi ntmfc013np10m5l-d.pdf Description: MOSFET N/P-CH 100V 9A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta), 102W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 60A (Tc), 5A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 50V, 2443pF @ 50V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 8.5A, 10V, 36mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V, 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 158µA, 4V @ 158µA
Supplier Device Package: 8-WDFN (5x6)
Produkt ist nicht verfügbar
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NTMFC013NP10M5L NTMFC013NP10M5L onsemi ntmfc013np10m5l-d.pdf Description: MOSFET N/P-CH 100V 9A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta), 102W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 60A (Tc), 5A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 50V, 2443pF @ 50V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 8.5A, 10V, 36mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V, 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 158µA, 4V @ 158µA
Supplier Device Package: 8-WDFN (5x6)
auf Bestellung 2605 Stücke:
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UHB100SC12E1BC3N UHB100SC12E1BC3N onsemi UHB100SC12E1BC3N-D.PDF Description: MOSFET 2P-CH 1200V 100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 P-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 417W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5859pF @ 800V
Rds On (Max) @ Id, Vgs: 12mOhm @ 70A, 12V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 15V
Vgs(th) (Max) @ Id: 6V @ 40mA
Supplier Device Package: Module
auf Bestellung 110 Stücke:
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1+334.51 EUR
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NV24C64MUW3VTBG NV24C64MUW3VTBG onsemi nv24c64muw-d.pdf Description: IC EEPROM 64KBIT I2C 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NV24C64MUW3VTBG NV24C64MUW3VTBG onsemi nv24c64muw-d.pdf Description: IC EEPROM 64KBIT I2C 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
Qualification: AEC-Q101
auf Bestellung 1940 Stücke:
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28+0.65 EUR
29+0.62 EUR
30+0.6 EUR
50+0.59 EUR
100+0.58 EUR
250+0.56 EUR
500+0.55 EUR
1000+0.53 EUR
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MR5060 onsemi QLA694B-2G.pdf Description: LED RED DIFFUSED T-1 T/H R/A
Packaging: Bulk
Package / Case: Radial
Color: Red
Mounting Type: Through Hole, Right Angle
Millicandela Rating: 1.5mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 5V
Lens Color: Red
Current - Test: 13mA
Height (Max): 7.37mm
Supplier Device Package: T-1
Lens Transparency: Diffused
Lens Style: Round with Domed Top
Lens Size: 3.05mm Dia
Produkt ist nicht verfügbar
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MC74HC245ADWR2G-Q MC74HC245ADWR2G-Q onsemi mc74hc245a-d.pdf Description: OCTAL 3-STATE NON-INVERTI
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
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2000+0.32 EUR
5000+0.31 EUR
10000+0.3 EUR
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MC74HC245ADWR2G-Q MC74HC245ADWR2G-Q onsemi mc74hc245a-d.pdf Description: OCTAL 3-STATE NON-INVERTI
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
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39+0.45 EUR
100+0.39 EUR
250+0.37 EUR
500+0.35 EUR
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CNW136 CNW136 onsemi CNW135%2C%20CNW136%2C%20CNW4502.pdf Description: OPTOISO 5KV TRANS W/BASE 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.400", 10.16mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Input Type: DC
Current - Output / Channel: 10mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Produkt ist nicht verfügbar
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CNW136S CNW136S onsemi CNW135%2C%20CNW136%2C%20CNW4502.pdf Description: OPTOISO 5KV TRANS W/BASE 8-SMD
Packaging: Bag
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Input Type: DC
Current - Output / Channel: 10mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Produkt ist nicht verfügbar
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CAT25512HU5E-GT3 CAT25512HU5E-GT3 onsemi cat25512-d.pdf Description: IC EEPROM 512KBIT SPI 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (3x2)
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Access Time: 40 ns
Memory Organization: 64K x 8
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CAT25512HU5E-GT3 CAT25512HU5E-GT3 onsemi cat25512-d.pdf Description: IC EEPROM 512KBIT SPI 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (3x2)
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Access Time: 40 ns
Memory Organization: 64K x 8
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MC74HC574ADWR2G-Q MC74HC574ADWR2G-Q onsemi mc74hc574a-d.pdf Description: OCTAL D-TYPE 3-STATE FF
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Grade: Automotive
Number of Bits per Element: 8
Qualification: AEC-Q100
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MC74HC574ADWR2G-Q MC74HC574ADWR2G-Q onsemi mc74hc574a-d.pdf Description: OCTAL D-TYPE 3-STATE FF
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Grade: Automotive
Number of Bits per Element: 8
Qualification: AEC-Q100
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NCP130AMX080TCGEVB NCP130AMX080TCGEVB onsemi Description: NCP130AMX080TC BIAS RAIL LDO REG
Packaging: Bulk
Voltage - Output: 0.8V
Voltage - Input: 0.8V ~ 5.5V
Current - Output: 850mA
Regulator Type: Positive Fixed
Utilized IC / Part: NCP130
Channels per IC: 1 - Single
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NCP130BMX080TCGEVB NCP130BMX080TCGEVB onsemi Description: NCP130BMX080TCG BIAS RAIL LDO RE
Packaging: Bulk
Voltage - Output: 0.8V
Voltage - Input: 0.8V ~ 5.5V
Current - Output: 850mA
Regulator Type: Positive Fixed
Utilized IC / Part: NCP130
Channels per IC: 1 - Single
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NCP171AMX080060TCGEVB NCP171AMX080060TCGEVB onsemi ncp171amx080060tcgevb_demo.pdf Description: NCP171: LDO REGULATOR, ULTRA-LOW
Packaging: Bulk
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NCV8130BMX080TCGEVB NCV8130BMX080TCGEVB onsemi Description: NCV8130BMX080TCG BIAS RAIL LDO R
Packaging: Bulk
Voltage - Output: 0.8V
Regulator Type: Positive Fixed
Utilized IC / Part: NCV8130
Channels per IC: 1 - Single
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NCP163ASN280T1GEVB onsemi Description: NCP163 SOT23 EVAL BOARD
Packaging: Bulk
Voltage - Output: 2.8V
Voltage - Input: 2.2V ~ 5.5V
Current - Output: 700mA
Regulator Type: Positive Fixed
Utilized IC / Part: NCP163
Channels per IC: 1 - Single
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FSBB30CH60F FSBB30CH60F onsemi fsbb30ch60f-d.pdf Description: IC SMART PWR MODULE SPM27-EA
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 30 A
Voltage: 600 V
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FSBB30CH60F FSBB30CH60F onsemi fsbb30ch60f-d.pdf Description: IC SMART PWR MODULE SPM27-EA
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 30 A
Voltage: 600 V
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SZBZX84C43ET1G SZBZX84C43ET1G onsemi bzx84c2v4et1-d.pdf Description: DIODE ZENER 43V 225MW SOT23-3
Tolerance: ±7%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
Qualification: AEC-Q101
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SZBZX84C43ET1G SZBZX84C43ET1G onsemi bzx84c2v4et1-d.pdf Description: DIODE ZENER 43V 225MW SOT23-3
Tolerance: ±7%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
Qualification: AEC-Q101
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BZX84C43LT1 BZX84C43LT1 onsemi BZX84C2V4LT1-D%2CBZX84B4V7LT1.pdf Description: DIODE ZENER 43V 225MW SOT23-3
Tolerance: ±7%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
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1N4740A 1N4740A onsemi 1N4736AT-D.PDF Description: DIODE ZENER 10V 1W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 7.6 V
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MC74HC4053ADR2G MC74HC4053ADR2G onsemi mc74hc4051a-d.pdf Description: IC SWITCH SPDT X 3 100OHM 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 120MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 50pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 3
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MC74HC4053ADWR2G MC74HC4053ADWR2G onsemi mc74hc4051a-d.pdf Description: IC SWITCH SPDT X 3 100OHM 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 120MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 50pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 3
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CNY17F3VM CNY17F3VM onsemi cny17f4m-d.pdf Description: OPTOISO 4.17KV 1CH TRANS 6-DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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CNY17F3300W CNY17F3300W onsemi CNY17x%2C%20CNY17Fx%2C%20MOC810x.pdf Description: OPTOISOLTR 5.3KV 1CH TRANS 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 1µs, 2µs
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
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CNY17F3S CNY17F3S onsemi CNY17x%2C%20CNY17Fx%2C%20MOC810x.pdf Description: OPTOISOLTR 5.3KV 1CH TRANS 6-SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 1µs, 2µs
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Produkt ist nicht verfügbar
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CNY17F3W CNY17F3W onsemi CNY17x%2C%20CNY17Fx%2C%20MOC810x.pdf Description: OPTOISOLTR 5.3KV 1CH TRANS 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 1µs, 2µs
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Produkt ist nicht verfügbar
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MC33063AD MC33063AD onsemi mc34063a-d.pdf description Description: IC REG 1.5A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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MC33063ADX MC33063ADX onsemi MC33063A%2C34063A.pdf Description: IC REG BUCK BOOST ADJ 1.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up, Step-Down
Current - Output: 1.5A (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive or Negative
Frequency - Switching: 100kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost
Supplier Device Package: 8-SOIC
Synchronous Rectifier: No
Voltage - Output (Max): 40V (Switch)
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 1.24V
Produkt ist nicht verfügbar
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MC33063AP MC33063AP onsemi MC33063A%2C34063A.pdf Description: IC REG BUCK BOOST ADJ 1.5A 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Up, Step-Down
Current - Output: 1.5A (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive or Negative
Frequency - Switching: 100kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost
Supplier Device Package: 8-DIP
Synchronous Rectifier: No
Voltage - Output (Max): 40V (Switch)
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 1.24V
Produkt ist nicht verfügbar
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MB8S MB8S onsemi mb8s-d.pdf Description: BRIDGE RECT 1P 800V 500MA 4-SOIC
Packaging: Tape & Reel (TR)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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MB8S MB8S onsemi mb8s-d.pdf Description: BRIDGE RECT 1P 800V 500MA 4-SOIC
Packaging: Cut Tape (CT)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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KA741DTF KA741DTF onsemi KA741.pdf Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: 0°C ~ 70°C
Current - Supply: 1.5mA
Slew Rate: 0.5V/µs
Current - Input Bias: 80 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 1
Current - Output / Channel: 25 mA
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FGH4L40T120SWD FGH4L40T120SWD onsemi fgh4l40t120swd-d.pdf Description: 1200V/40A FS7 IGBT NSCR TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 192.54 ns
Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 40A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 26.8ns/121.6ns
Switching Energy: 1.52mJ (on), 1.13mJ (off)
Test Condition: 600V, 40A, 4.7Ohm, 15V
Gate Charge: 148 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 384 W
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MBR3050PT MBR3050PT onsemi MBR3035-60PT.pdf Description: DIODE ARR SCHOTT 50V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 20 A
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
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CAV24C04C4ATR CAV24C04C4ATR onsemi CAV24C02-D.PDF Description: EEPROM SERIAL 4-KB I2C - AUTOMOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.84x0.86)
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 512 x 8
Qualification: AEC-Q100
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CAV24C04C4ATR CAV24C04C4ATR onsemi CAV24C02-D.PDF Description: EEPROM SERIAL 4-KB I2C - AUTOMOT
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.84x0.86)
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 512 x 8
Qualification: AEC-Q100
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MC74HC4053ADTR2G MC74HC4053ADTR2G onsemi mc74hc4051a-d.pdf Description: IC SWITCH SPDTX3 100OHM 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 120MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 50pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 3
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FSDM0565RBIWDTU onsemi fsdm0565rb-d.pdf Description: IC OFFLINE SWITCH FLYBACK I2PAK
Packaging: Tube
Package / Case: TO-262-6 Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 82%
Frequency - Switching: 66kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: I2-PAK-6 (Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Power (Watts): 70 W
Produkt ist nicht verfügbar
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74AC16244SSCX 74AC16244SSCX onsemi DS_261_74AC16244.pdf Description: IC BUFFER NON-INVERT 6V 48-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 48-SSOP
Produkt ist nicht verfügbar
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SNXH150B120H3Q2F2PG-N onsemi 488_SNXH150B120H3Q2F2PG-N.pdf Description: GEN III Q2BOOST 1100V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 80A
NTC Thermistor: Yes
Supplier Device Package: 35-PIM (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 279 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 19137 pF @ 20 V
Produkt ist nicht verfügbar
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BTB12-800CW3G BTB12-800CW3G onsemi ONSMS14509-1.pdf?t.download=true&u=5oefqw Description: TRIAC 800V 12A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 45 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 1.1 V
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 800 V
auf Bestellung 6571 Stücke:
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BZX85C47 BZX85C47 onsemi FAIRS45281-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER 47V 1.3W DO41G
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-41G
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 36 V
auf Bestellung 28500 Stücke:
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NTMFS4D0N08XT1G ntmfs4d0n08x-d.pdf
NTMFS4D0N08XT1G
Hersteller: onsemi
Description: T10 80V STD NCH MOSFET SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 27A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 133µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 40 V
Produkt ist nicht verfügbar
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NTMFS4D0N08XT1G ntmfs4d0n08x-d.pdf
NTMFS4D0N08XT1G
Hersteller: onsemi
Description: T10 80V STD NCH MOSFET SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 27A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 133µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 40 V
auf Bestellung 753 Stücke:
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Anzahl Preis
10+1.76 EUR
12+1.56 EUR
100+1.35 EUR
500+1.23 EUR
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NTMFS3D0N08XT1G ntmfs3d0n08x-d.pdf
NTMFS3D0N08XT1G
Hersteller: onsemi
Description: T10 80V STD NCH MOSFET SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 37A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 184µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 40 V
auf Bestellung 63000 Stücke:
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Anzahl Preis
1500+1.18 EUR
3000+1.11 EUR
4500+1.1 EUR
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NTMFS3D0N08XT1G ntmfs3d0n08x-d.pdf
NTMFS3D0N08XT1G
Hersteller: onsemi
Description: T10 80V STD NCH MOSFET SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 37A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 184µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 40 V
auf Bestellung 63979 Stücke:
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Anzahl Preis
6+3.43 EUR
10+2.19 EUR
100+1.67 EUR
500+1.34 EUR
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NTMFD5C466NLT1G ntmfd5c466nl-d.pdf
NTMFD5C466NLT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 14A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 25V
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
auf Bestellung 4500 Stücke:
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Anzahl Preis
1500+0.57 EUR
3000+0.52 EUR
4500+0.5 EUR
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NTMFD5C466NLT1G ntmfd5c466nl-d.pdf
NTMFD5C466NLT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 14A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 25V
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
auf Bestellung 5905 Stücke:
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Anzahl Preis
9+2.02 EUR
14+1.27 EUR
100+0.84 EUR
500+0.66 EUR
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NVMFS6H836NT3G nvmfs6h836n-d.pdf
NVMFS6H836NT3G
Hersteller: onsemi
Description: T8 80V SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
Qualification: AEC-Q101
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NVMFS6H836NT3G nvmfs6h836n-d.pdf
NVMFS6H836NT3G
Hersteller: onsemi
Description: T8 80V SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 3970 Stücke:
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Anzahl Preis
7+2.57 EUR
10+1.87 EUR
100+1.28 EUR
500+1.02 EUR
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NLV74VHCT00ADTR2G
NLV74VHCT00ADTR2G
Hersteller: onsemi
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.4V ~ 2V
Input Logic Level - Low: 0.53V ~ 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
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2500+0.34 EUR
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NLV74VHCT00ADTR2G
NLV74VHCT00ADTR2G
Hersteller: onsemi
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.4V ~ 2V
Input Logic Level - Low: 0.53V ~ 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
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1N6287AG ONSMS21119-1.pdf?t.download=true&u=5oefqw
1N6287AG
Hersteller: onsemi
Description: TVS DIODE 40.2VWM 64.8VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
auf Bestellung 1800 Stücke:
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Anzahl Preis
1040+0.43 EUR
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FSD176MRTLDTU FSD176MRTLDTU.pdf
FSD176MRTLDTU
Hersteller: onsemi
Description: IC OFFLINE SW FLBACK TO220F-6L
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 67%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V
Supplier Device Package: TO-220F-6L (L-Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Power (Watts): 90 W
Produkt ist nicht verfügbar
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GBPC3510W gbpc3510-d.pdf
GBPC3510W
Hersteller: onsemi
Description: BRIDGE RECT 1P 1KV 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 192 Stücke:
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Anzahl Preis
2+9.82 EUR
50+5.22 EUR
100+4.78 EUR
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NTMFC013NP10M5L ntmfc013np10m5l-d.pdf
NTMFC013NP10M5L
Hersteller: onsemi
Description: MOSFET N/P-CH 100V 9A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta), 102W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 60A (Tc), 5A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 50V, 2443pF @ 50V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 8.5A, 10V, 36mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V, 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 158µA, 4V @ 158µA
Supplier Device Package: 8-WDFN (5x6)
Produkt ist nicht verfügbar
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NTMFC013NP10M5L ntmfc013np10m5l-d.pdf
NTMFC013NP10M5L
Hersteller: onsemi
Description: MOSFET N/P-CH 100V 9A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta), 102W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 60A (Tc), 5A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 50V, 2443pF @ 50V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 8.5A, 10V, 36mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V, 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 158µA, 4V @ 158µA
Supplier Device Package: 8-WDFN (5x6)
auf Bestellung 2605 Stücke:
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Anzahl Preis
4+5 EUR
10+3.53 EUR
100+2.47 EUR
500+2.15 EUR
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UHB100SC12E1BC3N UHB100SC12E1BC3N-D.PDF
UHB100SC12E1BC3N
Hersteller: onsemi
Description: MOSFET 2P-CH 1200V 100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 P-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 417W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5859pF @ 800V
Rds On (Max) @ Id, Vgs: 12mOhm @ 70A, 12V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 15V
Vgs(th) (Max) @ Id: 6V @ 40mA
Supplier Device Package: Module
auf Bestellung 110 Stücke:
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Anzahl Preis
1+334.51 EUR
24+277.28 EUR
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NV24C64MUW3VTBG nv24c64muw-d.pdf
NV24C64MUW3VTBG
Hersteller: onsemi
Description: IC EEPROM 64KBIT I2C 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NV24C64MUW3VTBG nv24c64muw-d.pdf
NV24C64MUW3VTBG
Hersteller: onsemi
Description: IC EEPROM 64KBIT I2C 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
Qualification: AEC-Q101
auf Bestellung 1940 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
29+0.62 EUR
30+0.6 EUR
50+0.59 EUR
100+0.58 EUR
250+0.56 EUR
500+0.55 EUR
1000+0.53 EUR
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MR5060 QLA694B-2G.pdf
Hersteller: onsemi
Description: LED RED DIFFUSED T-1 T/H R/A
Packaging: Bulk
Package / Case: Radial
Color: Red
Mounting Type: Through Hole, Right Angle
Millicandela Rating: 1.5mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 5V
Lens Color: Red
Current - Test: 13mA
Height (Max): 7.37mm
Supplier Device Package: T-1
Lens Transparency: Diffused
Lens Style: Round with Domed Top
Lens Size: 3.05mm Dia
Produkt ist nicht verfügbar
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MC74HC245ADWR2G-Q mc74hc245a-d.pdf
MC74HC245ADWR2G-Q
Hersteller: onsemi
Description: OCTAL 3-STATE NON-INVERTI
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.33 EUR
2000+0.32 EUR
5000+0.31 EUR
10000+0.3 EUR
25000+0.29 EUR
Mindestbestellmenge: 1000
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MC74HC245ADWR2G-Q mc74hc245a-d.pdf
MC74HC245ADWR2G-Q
Hersteller: onsemi
Description: OCTAL 3-STATE NON-INVERTI
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
35+0.51 EUR
39+0.45 EUR
100+0.39 EUR
250+0.37 EUR
500+0.35 EUR
Mindestbestellmenge: 25
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CNW136 CNW135%2C%20CNW136%2C%20CNW4502.pdf
CNW136
Hersteller: onsemi
Description: OPTOISO 5KV TRANS W/BASE 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.400", 10.16mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Input Type: DC
Current - Output / Channel: 10mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Produkt ist nicht verfügbar
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CNW136S CNW135%2C%20CNW136%2C%20CNW4502.pdf
CNW136S
Hersteller: onsemi
Description: OPTOISO 5KV TRANS W/BASE 8-SMD
Packaging: Bag
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Input Type: DC
Current - Output / Channel: 10mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Produkt ist nicht verfügbar
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CAT25512HU5E-GT3 cat25512-d.pdf
CAT25512HU5E-GT3
Hersteller: onsemi
Description: IC EEPROM 512KBIT SPI 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (3x2)
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Access Time: 40 ns
Memory Organization: 64K x 8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.05 EUR
Mindestbestellmenge: 3000
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CAT25512HU5E-GT3 cat25512-d.pdf
CAT25512HU5E-GT3
Hersteller: onsemi
Description: IC EEPROM 512KBIT SPI 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (3x2)
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Access Time: 40 ns
Memory Organization: 64K x 8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.57 EUR
13+1.46 EUR
25+1.42 EUR
50+1.39 EUR
100+1.36 EUR
250+1.32 EUR
500+1.29 EUR
1000+1.26 EUR
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MC74HC574ADWR2G-Q mc74hc574a-d.pdf
MC74HC574ADWR2G-Q
Hersteller: onsemi
Description: OCTAL D-TYPE 3-STATE FF
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Grade: Automotive
Number of Bits per Element: 8
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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MC74HC574ADWR2G-Q mc74hc574a-d.pdf
MC74HC574ADWR2G-Q
Hersteller: onsemi
Description: OCTAL D-TYPE 3-STATE FF
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Grade: Automotive
Number of Bits per Element: 8
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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NCP130AMX080TCGEVB
NCP130AMX080TCGEVB
Hersteller: onsemi
Description: NCP130AMX080TC BIAS RAIL LDO REG
Packaging: Bulk
Voltage - Output: 0.8V
Voltage - Input: 0.8V ~ 5.5V
Current - Output: 850mA
Regulator Type: Positive Fixed
Utilized IC / Part: NCP130
Channels per IC: 1 - Single
Produkt ist nicht verfügbar
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NCP130BMX080TCGEVB
NCP130BMX080TCGEVB
Hersteller: onsemi
Description: NCP130BMX080TCG BIAS RAIL LDO RE
Packaging: Bulk
Voltage - Output: 0.8V
Voltage - Input: 0.8V ~ 5.5V
Current - Output: 850mA
Regulator Type: Positive Fixed
Utilized IC / Part: NCP130
Channels per IC: 1 - Single
Produkt ist nicht verfügbar
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NCP171AMX080060TCGEVB ncp171amx080060tcgevb_demo.pdf
NCP171AMX080060TCGEVB
Hersteller: onsemi
Description: NCP171: LDO REGULATOR, ULTRA-LOW
Packaging: Bulk
Produkt ist nicht verfügbar
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NCV8130BMX080TCGEVB
NCV8130BMX080TCGEVB
Hersteller: onsemi
Description: NCV8130BMX080TCG BIAS RAIL LDO R
Packaging: Bulk
Voltage - Output: 0.8V
Regulator Type: Positive Fixed
Utilized IC / Part: NCV8130
Channels per IC: 1 - Single
Produkt ist nicht verfügbar
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NCP163ASN280T1GEVB
Hersteller: onsemi
Description: NCP163 SOT23 EVAL BOARD
Packaging: Bulk
Voltage - Output: 2.8V
Voltage - Input: 2.2V ~ 5.5V
Current - Output: 700mA
Regulator Type: Positive Fixed
Utilized IC / Part: NCP163
Channels per IC: 1 - Single
Produkt ist nicht verfügbar
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FSBB30CH60F fsbb30ch60f-d.pdf
FSBB30CH60F
Hersteller: onsemi
Description: IC SMART PWR MODULE SPM27-EA
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 30 A
Voltage: 600 V
auf Bestellung 2950 Stücke:
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Anzahl Preis
14+32.51 EUR
Mindestbestellmenge: 14
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FSBB30CH60F fsbb30ch60f-d.pdf
FSBB30CH60F
Hersteller: onsemi
Description: IC SMART PWR MODULE SPM27-EA
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 30 A
Voltage: 600 V
Produkt ist nicht verfügbar
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SZBZX84C43ET1G bzx84c2v4et1-d.pdf
SZBZX84C43ET1G
Hersteller: onsemi
Description: DIODE ZENER 43V 225MW SOT23-3
Tolerance: ±7%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.057 EUR
Mindestbestellmenge: 3000
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SZBZX84C43ET1G bzx84c2v4et1-d.pdf
SZBZX84C43ET1G
Hersteller: onsemi
Description: DIODE ZENER 43V 225MW SOT23-3
Tolerance: ±7%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
60+0.3 EUR
112+0.16 EUR
500+0.11 EUR
1000+0.098 EUR
Mindestbestellmenge: 50
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BZX84C43LT1 BZX84C2V4LT1-D%2CBZX84B4V7LT1.pdf
BZX84C43LT1
Hersteller: onsemi
Description: DIODE ZENER 43V 225MW SOT23-3
Tolerance: ±7%
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 150 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 30.1 V
auf Bestellung 231000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9458+0.045 EUR
Mindestbestellmenge: 9458
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1N4740A 1N4736AT-D.PDF
1N4740A
Hersteller: onsemi
Description: DIODE ZENER 10V 1W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 7.6 V
auf Bestellung 11529 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
145+0.12 EUR
223+0.079 EUR
500+0.068 EUR
1000+0.059 EUR
3000+0.047 EUR
Mindestbestellmenge: 59
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MC74HC4053ADR2G mc74hc4051a-d.pdf
MC74HC4053ADR2G
Hersteller: onsemi
Description: IC SWITCH SPDT X 3 100OHM 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 120MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 50pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 3
auf Bestellung 206806 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
837+0.55 EUR
Mindestbestellmenge: 837
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MC74HC4053ADWR2G mc74hc4051a-d.pdf
MC74HC4053ADWR2G
Hersteller: onsemi
Description: IC SWITCH SPDT X 3 100OHM 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 120MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 50pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 3
auf Bestellung 20961 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
481+0.94 EUR
Mindestbestellmenge: 481
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CNY17F3VM cny17f4m-d.pdf
CNY17F3VM
Hersteller: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 30955 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.18 EUR
25+0.71 EUR
100+0.47 EUR
500+0.37 EUR
1000+0.34 EUR
2000+0.32 EUR
5000+0.3 EUR
10000+0.28 EUR
25000+0.27 EUR
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CNY17F3300W CNY17x%2C%20CNY17Fx%2C%20MOC810x.pdf
CNY17F3300W
Hersteller: onsemi
Description: OPTOISOLTR 5.3KV 1CH TRANS 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 1µs, 2µs
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Produkt ist nicht verfügbar
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CNY17F3S CNY17x%2C%20CNY17Fx%2C%20MOC810x.pdf
CNY17F3S
Hersteller: onsemi
Description: OPTOISOLTR 5.3KV 1CH TRANS 6-SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 1µs, 2µs
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Produkt ist nicht verfügbar
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CNY17F3W CNY17x%2C%20CNY17Fx%2C%20MOC810x.pdf
CNY17F3W
Hersteller: onsemi
Description: OPTOISOLTR 5.3KV 1CH TRANS 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 200% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 1µs, 2µs
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Produkt ist nicht verfügbar
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MC33063AD description mc34063a-d.pdf
MC33063AD
Hersteller: onsemi
Description: IC REG 1.5A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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MC33063ADX MC33063A%2C34063A.pdf
MC33063ADX
Hersteller: onsemi
Description: IC REG BUCK BOOST ADJ 1.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up, Step-Down
Current - Output: 1.5A (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive or Negative
Frequency - Switching: 100kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost
Supplier Device Package: 8-SOIC
Synchronous Rectifier: No
Voltage - Output (Max): 40V (Switch)
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 1.24V
Produkt ist nicht verfügbar
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MC33063AP MC33063A%2C34063A.pdf
MC33063AP
Hersteller: onsemi
Description: IC REG BUCK BOOST ADJ 1.5A 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Up, Step-Down
Current - Output: 1.5A (Switch)
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive or Negative
Frequency - Switching: 100kHz
Voltage - Input (Max): 40V
Topology: Buck, Boost
Supplier Device Package: 8-DIP
Synchronous Rectifier: No
Voltage - Output (Max): 40V (Switch)
Voltage - Input (Min): 3V
Voltage - Output (Min/Fixed): 1.24V
Produkt ist nicht verfügbar
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MB8S mb8s-d.pdf
MB8S
Hersteller: onsemi
Description: BRIDGE RECT 1P 800V 500MA 4-SOIC
Packaging: Tape & Reel (TR)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 32000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.21 EUR
6000+0.2 EUR
9000+0.19 EUR
15000+0.18 EUR
21000+0.17 EUR
30000+0.16 EUR
Mindestbestellmenge: 3000
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MB8S mb8s-d.pdf
MB8S
Hersteller: onsemi
Description: BRIDGE RECT 1P 800V 500MA 4-SOIC
Packaging: Cut Tape (CT)
Package / Case: TO-269AA, 4-BESOP
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 4-SOIC
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 500 mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 32461 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
31+0.58 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.25 EUR
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KA741DTF KA741.pdf
KA741DTF
Hersteller: onsemi
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard (General Purpose)
Operating Temperature: 0°C ~ 70°C
Current - Supply: 1.5mA
Slew Rate: 0.5V/µs
Current - Input Bias: 80 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 1
Current - Output / Channel: 25 mA
Produkt ist nicht verfügbar
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FGH4L40T120SWD fgh4l40t120swd-d.pdf
FGH4L40T120SWD
Hersteller: onsemi
Description: 1200V/40A FS7 IGBT NSCR TO247
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 192.54 ns
Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 40A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 26.8ns/121.6ns
Switching Energy: 1.52mJ (on), 1.13mJ (off)
Test Condition: 600V, 40A, 4.7Ohm, 15V
Gate Charge: 148 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 384 W
auf Bestellung 1350 Stücke:
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Anzahl Preis
2+10.81 EUR
10+7.31 EUR
450+4.52 EUR
900+4.46 EUR
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MBR3050PT MBR3035-60PT.pdf
MBR3050PT
Hersteller: onsemi
Description: DIODE ARR SCHOTT 50V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 20 A
Current - Reverse Leakage @ Vr: 5 mA @ 50 V
Produkt ist nicht verfügbar
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CAV24C04C4ATR CAV24C02-D.PDF
CAV24C04C4ATR
Hersteller: onsemi
Description: EEPROM SERIAL 4-KB I2C - AUTOMOT
Packaging: Cut Tape (CT)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.84x0.86)
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 512 x 8
Qualification: AEC-Q100
auf Bestellung 100000 Stücke:
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Anzahl Preis
27+0.67 EUR
38+0.47 EUR
42+0.42 EUR
100+0.36 EUR
250+0.34 EUR
500+0.32 EUR
1000+0.31 EUR
2500+0.29 EUR
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CAV24C04C4ATR CAV24C02-D.PDF
CAV24C04C4ATR
Hersteller: onsemi
Description: EEPROM SERIAL 4-KB I2C - AUTOMOT
Packaging: Tape & Reel (TR)
Package / Case: 4-XFBGA, WLCSP
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 4-WLCSP (0.84x0.86)
Grade: Automotive
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 512 x 8
Qualification: AEC-Q100
auf Bestellung 100000 Stücke:
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Anzahl Preis
5000+0.29 EUR
10000+0.28 EUR
25000+0.27 EUR
Mindestbestellmenge: 5000
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MC74HC4053ADTR2G mc74hc4051a-d.pdf
MC74HC4053ADTR2G
Hersteller: onsemi
Description: IC SWITCH SPDTX3 100OHM 16TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 100Ohm
-3db Bandwidth: 120MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Crosstalk: -60dB @ 1MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 50pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 3
auf Bestellung 53160 Stücke:
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Anzahl Preis
999+0.46 EUR
Mindestbestellmenge: 999
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FSDM0565RBIWDTU fsdm0565rb-d.pdf
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK I2PAK
Packaging: Tube
Package / Case: TO-262-6 Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Duty Cycle: 82%
Frequency - Switching: 66kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: I2-PAK-6 (Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Power (Watts): 70 W
Produkt ist nicht verfügbar
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74AC16244SSCX DS_261_74AC16244.pdf
74AC16244SSCX
Hersteller: onsemi
Description: IC BUFFER NON-INVERT 6V 48-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 48-BSSOP (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 4
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 48-SSOP
Produkt ist nicht verfügbar
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SNXH150B120H3Q2F2PG-N 488_SNXH150B120H3Q2F2PG-N.pdf
Hersteller: onsemi
Description: GEN III Q2BOOST 1100V
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 3 Independent
Operating Temperature: 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 80A
NTC Thermistor: Yes
Supplier Device Package: 35-PIM (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 279 W
Current - Collector Cutoff (Max): 400 µA
Input Capacitance (Cies) @ Vce: 19137 pF @ 20 V
Produkt ist nicht verfügbar
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BTB12-800CW3G ONSMS14509-1.pdf?t.download=true&u=5oefqw
BTB12-800CW3G
Hersteller: onsemi
Description: TRIAC 800V 12A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 45 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 120A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 1.1 V
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 800 V
auf Bestellung 6571 Stücke:
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Anzahl Preis
349+1.28 EUR
Mindestbestellmenge: 349
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BZX85C47 FAIRS45281-1.pdf?t.download=true&u=5oefqw
BZX85C47
Hersteller: onsemi
Description: DIODE ZENER 47V 1.3W DO41G
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-41G
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 36 V
auf Bestellung 28500 Stücke:
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Anzahl Preis
6045+0.076 EUR
Mindestbestellmenge: 6045
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