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FSB50450S FSB50450S onsemi fsb50450s-d.pdf Description: MOSFET IPM 500V 1.5A 23-PWRSMD
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.5 A
Voltage: 500 V
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NJVMJD253T4G NJVMJD253T4G onsemi mjd243-d.pdf Description: TRANS PNP 100V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Frequency - Transition: 40MHz
Supplier Device Package: DPAK
Grade: Automotive
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.4 W
Qualification: AEC-Q101
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S2J S2J onsemi s2m-d.pdf Description: DIODE STANDARD 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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S2J S2J onsemi s2m-d.pdf Description: DIODE STANDARD 600V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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UJ4SC075009B7S UJ4SC075009B7S onsemi UJ4SC075009B7S-D.PDF Description: 750V/9MOHM, N-OFF SIC STACK CASC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 70A, 12V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 400 V
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UJ4SC075009B7S UJ4SC075009B7S onsemi UJ4SC075009B7S-D.PDF Description: 750V/9MOHM, N-OFF SIC STACK CASC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 70A, 12V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 400 V
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BTA16-800CW3G BTA16-800CW3G onsemi ONSMS25288-1.pdf?t.download=true&u=5oefqw Description: TRIAC 800V 16A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 170A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 1.1 V
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
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MC74HC20ADR2G-Q onsemi Description: DUAL 4-INPUT NAND GATE
Packaging: Tape & Reel (TR)
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MC74HC20ADR2G-Q onsemi Description: DUAL 4-INPUT NAND GATE
Packaging: Cut Tape (CT)
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MC74HCT573ADWR2G-Q MC74HCT573ADWR2G-Q onsemi Description: IC D-TYPE 1:8 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 6mA, 6mA
Delay Time - Propagation: 30ns
Supplier Device Package: 20-SOIC
Grade: Automotive
Qualification: AEC-Q100
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MC74HCT573ADWR2G-Q MC74HCT573ADWR2G-Q onsemi Description: IC D-TYPE 1:8 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 6mA, 6mA
Delay Time - Propagation: 30ns
Supplier Device Package: 20-SOIC
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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MC74LVX4052MG MC74LVX4052MG onsemi MC74LVX4052-D.pdf Description: IC SWITCH SP4TX2 26OHM 16SOEIAJ
Packaging: Tube
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-SOEIAJ
Voltage - Supply, Single (V+): 2.5V ~ 6V
Voltage - Supply, Dual (V±): ±2.5V ~ 6V
Charge Injection: 12pC
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
Produkt ist nicht verfügbar
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MCR12LMG MCR12LMG onsemi Description: SCR 600V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 8 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz
Current - On State (It (AV)) (Max): 7.6 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
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JANTXV2N3700 onsemi 2N3019-D.PDF Description: TRANS NPN 80V 1A TO-18-3
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18-3
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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JAN2N3700 onsemi 2N3019-D.PDF Description: TRANS NPN 80V 1A TO-18-3
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18-3
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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TIP117 TIP117 onsemi tip110-d.pdf Description: TRANS PNP DARL 100V 2A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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MC74LVXT4052DTR2G MC74LVXT4052DTR2G onsemi PdfFile_146224.pdf Description: IC SWITCH SP4T X 2 26OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.5V ~ 6V
Voltage - Supply, Dual (V±): ±2.5V ~ 6V
Charge Injection: 12pC
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
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MC74LVXT4052DTR2G MC74LVXT4052DTR2G onsemi PdfFile_146224.pdf Description: IC SWITCH SP4T X 2 26OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.5V ~ 6V
Voltage - Supply, Dual (V±): ±2.5V ~ 6V
Charge Injection: 12pC
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
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56+0.31 EUR
100+0.27 EUR
250+0.25 EUR
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MAX809SN293D1T1G MAX809SN293D1T1G onsemi max809s-d.pdf Description: IC SUPERVISOR 1 CHANNEL SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 1ms Minimum
Voltage - Threshold: 2.93V
Supplier Device Package: SOT-23-3 (TO-236)
DigiKey Programmable: Not Verified
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CNW11AV2300 CNW11AV2300 onsemi CNW11AV-1%2C2%2C3.pdf Description: OPTOISO 4KV TRANS W/BASE 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 4000Vrms
Current Transfer Ratio (Min): 50% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Produkt ist nicht verfügbar
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FGL35N120FTDTU FGL35N120FTDTU onsemi fgl35n120ftd-d.pdf Description: IGBT TRENCH FS 1200V 70A TO-264
Packaging: Bulk
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 337 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 35A
Supplier Device Package: TO-264-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/172ns
Switching Energy: 2.5mJ (on), 1.7mJ (off)
Test Condition: 600V, 35A, 10Ohm, 15V
Gate Charge: 210 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 368 W
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FGL35N120FTDTU FGL35N120FTDTU onsemi fgl35n120ftd-d.pdf Description: IGBT TRENCH FS 1200V 70A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 337 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 35A
Supplier Device Package: TO-264-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/172ns
Switching Energy: 2.5mJ (on), 1.7mJ (off)
Test Condition: 600V, 35A, 10Ohm, 15V
Gate Charge: 210 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 368 W
Produkt ist nicht verfügbar
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LA5779-E LA5779-E onsemi ONSMS36240-1.pdf?t.download=true&u=5oefqw Description: IC REG BUCK ADJ 3.1A TO220-5H
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 3.1A (Switch)
Operating Temperature: -30°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 160kHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: TO-220-5H
Synchronous Rectifier: No
Voltage - Output (Max): 28V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.23V
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LA5779-E LA5779-E onsemi ONSMS36240-1.pdf?t.download=true&u=5oefqw Description: IC REG BUCK ADJ 3.1A TO220-5H
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 3.1A (Switch)
Operating Temperature: -30°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 160kHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: TO-220-5H
Synchronous Rectifier: No
Voltage - Output (Max): 28V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.23V
Produkt ist nicht verfügbar
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LA5774-FA-E LA5774-FA-E onsemi ONSMS36158-1.pdf?t.download=true&u=5oefqw Description: IC REG BUCK ADJ 3.1A TO220-5H
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 3.1A (Switch)
Operating Temperature: -30°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 160kHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: TO-220-5H
Synchronous Rectifier: No
Voltage - Output (Max): 28V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.26V
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LA5774-FA-E LA5774-FA-E onsemi ONSMS36158-1.pdf?t.download=true&u=5oefqw Description: IC REG BUCK ADJ 3.1A TO220-5H
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 3.1A (Switch)
Operating Temperature: -30°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 160kHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: TO-220-5H
Synchronous Rectifier: No
Voltage - Output (Max): 28V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.26V
Produkt ist nicht verfügbar
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NTTFS1D4N04XMTAG NTTFS1D4N04XMTAG onsemi NTTFS1D4N04XM-D.PDF Description: MOSFET - POWER, SINGLEN-CHANNEL,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs: 1.43mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2278 pF @ 20 V
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100+1.25 EUR
500+0.99 EUR
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NTTFS1D4N04XMTAG NTTFS1D4N04XMTAG onsemi NTTFS1D4N04XM-D.PDF Description: MOSFET - POWER, SINGLEN-CHANNEL,
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs: 1.43mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2278 pF @ 20 V
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NVMFWS004N04XMT1G NVMFWS004N04XMT1G onsemi NVMFWS004N04XM-D.PDF Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFWS004N04XMT1G NVMFWS004N04XMT1G onsemi NVMFWS004N04XM-D.PDF Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 25 V
Qualification: AEC-Q101
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NTMFSCH0D4N04XMTWG NTMFSCH0D4N04XMTWG onsemi ntmfsch0d4n04xm-d.pdf Description: MOSFET - POWER, SINGLEN-CHANNEL,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 529A (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9143 pF @ 20 V
Produkt ist nicht verfügbar
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NTMFSCH0D4N04XMTWG NTMFSCH0D4N04XMTWG onsemi ntmfsch0d4n04xm-d.pdf Description: MOSFET - POWER, SINGLEN-CHANNEL,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 529A (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9143 pF @ 20 V
Produkt ist nicht verfügbar
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MMDF4N01HDR2 MMDF4N01HDR2 onsemi ONSM-S-A0002809641-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
auf Bestellung 117500 Stücke:
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BC556BTFR BC556BTFR onsemi FAIR-S-A0001412208-1.pdf?t.download=true&u=5oefqw Description: TRANS PNP 65V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
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NTMFS4D0N08XT1G NTMFS4D0N08XT1G onsemi ntmfs4d0n08x-d.pdf Description: T10 80V STD NCH MOSFET SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 27A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 133µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 40 V
Produkt ist nicht verfügbar
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NTMFS4D0N08XT1G NTMFS4D0N08XT1G onsemi ntmfs4d0n08x-d.pdf Description: T10 80V STD NCH MOSFET SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 27A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 133µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 40 V
auf Bestellung 753 Stücke:
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NTMFS3D0N08XT1G NTMFS3D0N08XT1G onsemi ntmfs3d0n08x-d.pdf Description: T10 80V STD NCH MOSFET SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 37A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 184µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 40 V
auf Bestellung 63000 Stücke:
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NTMFS3D0N08XT1G NTMFS3D0N08XT1G onsemi ntmfs3d0n08x-d.pdf Description: T10 80V STD NCH MOSFET SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 37A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 184µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 40 V
auf Bestellung 63979 Stücke:
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NTMFD5C466NLT1G NTMFD5C466NLT1G onsemi ntmfd5c466nl-d.pdf Description: MOSFET 2N-CH 40V 14A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 25V
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
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NTMFD5C466NLT1G NTMFD5C466NLT1G onsemi ntmfd5c466nl-d.pdf Description: MOSFET 2N-CH 40V 14A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 25V
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
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NVMFS6H836NT3G NVMFS6H836NT3G onsemi nvmfs6h836n-d.pdf Description: T8 80V SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
Qualification: AEC-Q101
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NVMFS6H836NT3G NVMFS6H836NT3G onsemi nvmfs6h836n-d.pdf Description: T8 80V SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 3970 Stücke:
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NLV74VHCT00ADTR2G NLV74VHCT00ADTR2G onsemi Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.4V ~ 2V
Input Logic Level - Low: 0.53V ~ 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
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NLV74VHCT00ADTR2G NLV74VHCT00ADTR2G onsemi Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.4V ~ 2V
Input Logic Level - Low: 0.53V ~ 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
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1N6287AG 1N6287AG onsemi ONSMS21119-1.pdf?t.download=true&u=5oefqw Description: TVS DIODE 40.2VWM 64.8VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
auf Bestellung 1800 Stücke:
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FSD176MRTLDTU FSD176MRTLDTU onsemi FSD176MRTLDTU.pdf Description: IC OFFLINE SW FLBACK TO220F-6L
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 67%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V
Supplier Device Package: TO-220F-6L (L-Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Power (Watts): 90 W
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GBPC3510W GBPC3510W onsemi gbpc3510-d.pdf Description: BRIDGE RECT 1P 1KV 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 192 Stücke:
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NTMFC013NP10M5L NTMFC013NP10M5L onsemi ntmfc013np10m5l-d.pdf Description: MOSFET N/P-CH 100V 9A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta), 102W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 60A (Tc), 5A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 50V, 2443pF @ 50V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 8.5A, 10V, 36mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V, 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 158µA, 4V @ 158µA
Supplier Device Package: 8-WDFN (5x6)
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NTMFC013NP10M5L NTMFC013NP10M5L onsemi ntmfc013np10m5l-d.pdf Description: MOSFET N/P-CH 100V 9A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta), 102W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 60A (Tc), 5A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 50V, 2443pF @ 50V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 8.5A, 10V, 36mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V, 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 158µA, 4V @ 158µA
Supplier Device Package: 8-WDFN (5x6)
auf Bestellung 2605 Stücke:
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UHB100SC12E1BC3N UHB100SC12E1BC3N onsemi UHB100SC12E1BC3N-D.PDF Description: MOSFET 2P-CH 1200V 100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 P-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 417W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5859pF @ 800V
Rds On (Max) @ Id, Vgs: 12mOhm @ 70A, 12V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 15V
Vgs(th) (Max) @ Id: 6V @ 40mA
Supplier Device Package: Module
auf Bestellung 110 Stücke:
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NV24C64MUW3VTBG NV24C64MUW3VTBG onsemi nv24c64muw-d.pdf Description: IC EEPROM 64KBIT I2C 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
Qualification: AEC-Q101
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NV24C64MUW3VTBG NV24C64MUW3VTBG onsemi nv24c64muw-d.pdf Description: IC EEPROM 64KBIT I2C 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
Qualification: AEC-Q101
auf Bestellung 1940 Stücke:
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28+0.65 EUR
29+0.62 EUR
30+0.6 EUR
50+0.59 EUR
100+0.58 EUR
250+0.56 EUR
500+0.55 EUR
1000+0.53 EUR
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MR5060 onsemi QLA694B-2G.pdf Description: LED RED DIFFUSED T-1 T/H R/A
Packaging: Bulk
Package / Case: Radial
Color: Red
Mounting Type: Through Hole, Right Angle
Millicandela Rating: 1.5mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 5V
Lens Color: Red
Current - Test: 13mA
Height (Max): 7.37mm
Supplier Device Package: T-1
Lens Transparency: Diffused
Lens Style: Round with Domed Top
Lens Size: 3.05mm Dia
Produkt ist nicht verfügbar
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MC74HC245ADWR2G-Q MC74HC245ADWR2G-Q onsemi mc74hc245a-d.pdf Description: OCTAL 3-STATE NON-INVERTI
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
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1000+0.33 EUR
2000+0.32 EUR
5000+0.31 EUR
10000+0.3 EUR
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MC74HC245ADWR2G-Q MC74HC245ADWR2G-Q onsemi mc74hc245a-d.pdf Description: OCTAL 3-STATE NON-INVERTI
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
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25+0.72 EUR
35+0.51 EUR
39+0.45 EUR
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CNW136 CNW136 onsemi CNW135%2C%20CNW136%2C%20CNW4502.pdf Description: OPTOISO 5KV TRANS W/BASE 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.400", 10.16mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Input Type: DC
Current - Output / Channel: 10mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Produkt ist nicht verfügbar
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CNW136S CNW136S onsemi CNW135%2C%20CNW136%2C%20CNW4502.pdf Description: OPTOISO 5KV TRANS W/BASE 8-SMD
Packaging: Bag
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Input Type: DC
Current - Output / Channel: 10mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Produkt ist nicht verfügbar
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CAT25512HU5E-GT3 CAT25512HU5E-GT3 onsemi cat25512-d.pdf Description: IC EEPROM 512KBIT SPI 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (3x2)
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Access Time: 40 ns
Memory Organization: 64K x 8
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CAT25512HU5E-GT3 CAT25512HU5E-GT3 onsemi cat25512-d.pdf Description: IC EEPROM 512KBIT SPI 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (3x2)
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Access Time: 40 ns
Memory Organization: 64K x 8
auf Bestellung 3000 Stücke:
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12+1.57 EUR
13+1.46 EUR
25+1.42 EUR
50+1.39 EUR
100+1.36 EUR
250+1.32 EUR
500+1.29 EUR
1000+1.26 EUR
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MC74HC574ADWR2G-Q MC74HC574ADWR2G-Q onsemi mc74hc574a-d.pdf Description: OCTAL D-TYPE 3-STATE FF
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Grade: Automotive
Number of Bits per Element: 8
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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FSB50450S fsb50450s-d.pdf
FSB50450S
Hersteller: onsemi
Description: MOSFET IPM 500V 1.5A 23-PWRSMD
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.5 A
Voltage: 500 V
auf Bestellung 33697 Stücke:
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1+20.06 EUR
10+14.03 EUR
100+10.62 EUR
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NJVMJD253T4G mjd243-d.pdf
NJVMJD253T4G
Hersteller: onsemi
Description: TRANS PNP 100V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Frequency - Transition: 40MHz
Supplier Device Package: DPAK
Grade: Automotive
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1.4 W
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
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Anzahl Preis
10+1.88 EUR
15+1.18 EUR
100+0.78 EUR
500+0.6 EUR
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S2J s2m-d.pdf
S2J
Hersteller: onsemi
Description: DIODE STANDARD 600V 2A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 108000 Stücke:
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3000+0.11 EUR
75000+0.1 EUR
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S2J s2m-d.pdf
S2J
Hersteller: onsemi
Description: DIODE STANDARD 600V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
auf Bestellung 109695 Stücke:
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Anzahl Preis
40+0.44 EUR
66+0.27 EUR
100+0.24 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 40
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UJ4SC075009B7S UJ4SC075009B7S-D.PDF
UJ4SC075009B7S
Hersteller: onsemi
Description: 750V/9MOHM, N-OFF SIC STACK CASC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 70A, 12V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 400 V
Produkt ist nicht verfügbar
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UJ4SC075009B7S UJ4SC075009B7S-D.PDF
UJ4SC075009B7S
Hersteller: onsemi
Description: 750V/9MOHM, N-OFF SIC STACK CASC
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 70A, 12V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 400 V
auf Bestellung 699 Stücke:
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Anzahl Preis
1+50.86 EUR
10+40.31 EUR
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BTA16-800CW3G ONSMS25288-1.pdf?t.download=true&u=5oefqw
BTA16-800CW3G
Hersteller: onsemi
Description: TRIAC 800V 16A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 50 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 170A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 1.1 V
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 16 A
Voltage - Off State: 800 V
auf Bestellung 163600 Stücke:
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Anzahl Preis
160+2.86 EUR
Mindestbestellmenge: 160
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MC74HC20ADR2G-Q
Hersteller: onsemi
Description: DUAL 4-INPUT NAND GATE
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MC74HC20ADR2G-Q
Hersteller: onsemi
Description: DUAL 4-INPUT NAND GATE
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MC74HCT573ADWR2G-Q
MC74HCT573ADWR2G-Q
Hersteller: onsemi
Description: IC D-TYPE 1:8 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 6mA, 6mA
Delay Time - Propagation: 30ns
Supplier Device Package: 20-SOIC
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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MC74HCT573ADWR2G-Q
MC74HCT573ADWR2G-Q
Hersteller: onsemi
Description: IC D-TYPE 1:8 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 6mA, 6mA
Delay Time - Propagation: 30ns
Supplier Device Package: 20-SOIC
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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MC74LVX4052MG MC74LVX4052-D.pdf
MC74LVX4052MG
Hersteller: onsemi
Description: IC SWITCH SP4TX2 26OHM 16SOEIAJ
Packaging: Tube
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-SOEIAJ
Voltage - Supply, Single (V+): 2.5V ~ 6V
Voltage - Supply, Dual (V±): ±2.5V ~ 6V
Charge Injection: 12pC
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
Produkt ist nicht verfügbar
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MCR12LMG
MCR12LMG
Hersteller: onsemi
Description: SCR 600V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 20 mA
Current - Gate Trigger (Igt) (Max): 8 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 100A @ 60Hz
Current - On State (It (AV)) (Max): 7.6 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 2.2 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220
Current - On State (It (RMS)) (Max): 12 A
Voltage - Off State: 600 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
342+1.31 EUR
Mindestbestellmenge: 342
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JANTXV2N3700 2N3019-D.PDF
Hersteller: onsemi
Description: TRANS NPN 80V 1A TO-18-3
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18-3
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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JAN2N3700 2N3019-D.PDF
Hersteller: onsemi
Description: TRANS NPN 80V 1A TO-18-3
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18-3
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500
Produkt ist nicht verfügbar
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TIP117 tip110-d.pdf
TIP117
Hersteller: onsemi
Description: TRANS PNP DARL 100V 2A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Produkt ist nicht verfügbar
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MC74LVXT4052DTR2G PdfFile_146224.pdf
MC74LVXT4052DTR2G
Hersteller: onsemi
Description: IC SWITCH SP4T X 2 26OHM 16TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.5V ~ 6V
Voltage - Supply, Dual (V±): ±2.5V ~ 6V
Charge Injection: 12pC
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
auf Bestellung 27500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.22 EUR
5000+0.21 EUR
12500+0.2 EUR
Mindestbestellmenge: 2500
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MC74LVXT4052DTR2G PdfFile_146224.pdf
MC74LVXT4052DTR2G
Hersteller: onsemi
Description: IC SWITCH SP4T X 2 26OHM 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 26Ohm
-3db Bandwidth: 80MHz
Supplier Device Package: 16-TSSOP
Voltage - Supply, Single (V+): 2.5V ~ 6V
Voltage - Supply, Dual (V±): ±2.5V ~ 6V
Charge Injection: 12pC
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 2
auf Bestellung 27500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
50+0.35 EUR
56+0.31 EUR
100+0.27 EUR
250+0.25 EUR
500+0.24 EUR
1000+0.23 EUR
Mindestbestellmenge: 35
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MAX809SN293D1T1G max809s-d.pdf
MAX809SN293D1T1G
Hersteller: onsemi
Description: IC SUPERVISOR 1 CHANNEL SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Output: Push-Pull, Totem Pole
Type: Simple Reset/Power-On Reset
Reset: Active Low
Operating Temperature: -40°C ~ 105°C (TJ)
Number of Voltages Monitored: 1
Reset Timeout: 1ms Minimum
Voltage - Threshold: 2.93V
Supplier Device Package: SOT-23-3 (TO-236)
DigiKey Programmable: Not Verified
auf Bestellung 585 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
585+0.78 EUR
Mindestbestellmenge: 585
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CNW11AV2300 CNW11AV-1%2C2%2C3.pdf
CNW11AV2300
Hersteller: onsemi
Description: OPTOISO 4KV TRANS W/BASE 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 4000Vrms
Current Transfer Ratio (Min): 50% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Produkt ist nicht verfügbar
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FGL35N120FTDTU fgl35n120ftd-d.pdf
FGL35N120FTDTU
Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 70A TO-264
Packaging: Bulk
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 337 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 35A
Supplier Device Package: TO-264-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/172ns
Switching Energy: 2.5mJ (on), 1.7mJ (off)
Test Condition: 600V, 35A, 10Ohm, 15V
Gate Charge: 210 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 368 W
auf Bestellung 1501 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+8.6 EUR
Mindestbestellmenge: 53
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FGL35N120FTDTU fgl35n120ftd-d.pdf
FGL35N120FTDTU
Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 70A TO-264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 337 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 35A
Supplier Device Package: TO-264-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/172ns
Switching Energy: 2.5mJ (on), 1.7mJ (off)
Test Condition: 600V, 35A, 10Ohm, 15V
Gate Charge: 210 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 105 A
Power - Max: 368 W
Produkt ist nicht verfügbar
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LA5779-E ONSMS36240-1.pdf?t.download=true&u=5oefqw
LA5779-E
Hersteller: onsemi
Description: IC REG BUCK ADJ 3.1A TO220-5H
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 3.1A (Switch)
Operating Temperature: -30°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 160kHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: TO-220-5H
Synchronous Rectifier: No
Voltage - Output (Max): 28V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.23V
auf Bestellung 76308 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
229+1.95 EUR
Mindestbestellmenge: 229
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LA5779-E ONSMS36240-1.pdf?t.download=true&u=5oefqw
LA5779-E
Hersteller: onsemi
Description: IC REG BUCK ADJ 3.1A TO220-5H
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 3.1A (Switch)
Operating Temperature: -30°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 160kHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: TO-220-5H
Synchronous Rectifier: No
Voltage - Output (Max): 28V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.23V
Produkt ist nicht verfügbar
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LA5774-FA-E ONSMS36158-1.pdf?t.download=true&u=5oefqw
LA5774-FA-E
Hersteller: onsemi
Description: IC REG BUCK ADJ 3.1A TO220-5H
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 3.1A (Switch)
Operating Temperature: -30°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 160kHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: TO-220-5H
Synchronous Rectifier: No
Voltage - Output (Max): 28V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.26V
auf Bestellung 4137 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
229+1.95 EUR
Mindestbestellmenge: 229
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LA5774-FA-E ONSMS36158-1.pdf?t.download=true&u=5oefqw
LA5774-FA-E
Hersteller: onsemi
Description: IC REG BUCK ADJ 3.1A TO220-5H
Packaging: Tube
Package / Case: TO-220-5 Formed Leads
Output Type: Adjustable
Mounting Type: Through Hole
Number of Outputs: 1
Function: Step-Down
Current - Output: 3.1A (Switch)
Operating Temperature: -30°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 160kHz
Voltage - Input (Max): 28V
Topology: Buck
Supplier Device Package: TO-220-5H
Synchronous Rectifier: No
Voltage - Output (Max): 28V
Voltage - Input (Min): 4.5V
Voltage - Output (Min/Fixed): 1.26V
Produkt ist nicht verfügbar
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NTTFS1D4N04XMTAG NTTFS1D4N04XM-D.PDF
NTTFS1D4N04XMTAG
Hersteller: onsemi
Description: MOSFET - POWER, SINGLEN-CHANNEL,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs: 1.43mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2278 pF @ 20 V
auf Bestellung 2955 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.9 EUR
10+1.85 EUR
100+1.25 EUR
500+0.99 EUR
Mindestbestellmenge: 7
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NTTFS1D4N04XMTAG NTTFS1D4N04XM-D.PDF
NTTFS1D4N04XMTAG
Hersteller: onsemi
Description: MOSFET - POWER, SINGLEN-CHANNEL,
Packaging: Bulk
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs: 1.43mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 35.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2278 pF @ 20 V
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.87 EUR
Mindestbestellmenge: 1500
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NVMFWS004N04XMT1G NVMFWS004N04XM-D.PDF
NVMFWS004N04XMT1G
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFWS004N04XMT1G NVMFWS004N04XM-D.PDF
NVMFWS004N04XMT1G
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 10A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 669 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NTMFSCH0D4N04XMTWG ntmfsch0d4n04xm-d.pdf
NTMFSCH0D4N04XMTWG
Hersteller: onsemi
Description: MOSFET - POWER, SINGLEN-CHANNEL,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 529A (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9143 pF @ 20 V
Produkt ist nicht verfügbar
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NTMFSCH0D4N04XMTWG ntmfsch0d4n04xm-d.pdf
NTMFSCH0D4N04XMTWG
Hersteller: onsemi
Description: MOSFET - POWER, SINGLEN-CHANNEL,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 529A (Tc)
Rds On (Max) @ Id, Vgs: 0.4mOhm @ 50A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 350µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9143 pF @ 20 V
Produkt ist nicht verfügbar
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MMDF4N01HDR2 ONSM-S-A0002809641-1.pdf?t.download=true&u=5oefqw
MMDF4N01HDR2
Hersteller: onsemi
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
auf Bestellung 117500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1150+0.39 EUR
Mindestbestellmenge: 1150
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BC556BTFR FAIR-S-A0001412208-1.pdf?t.download=true&u=5oefqw
BC556BTFR
Hersteller: onsemi
Description: TRANS PNP 65V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 500 mW
auf Bestellung 212913 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4520+0.11 EUR
Mindestbestellmenge: 4520
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NTMFS4D0N08XT1G ntmfs4d0n08x-d.pdf
NTMFS4D0N08XT1G
Hersteller: onsemi
Description: T10 80V STD NCH MOSFET SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 27A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 133µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 40 V
Produkt ist nicht verfügbar
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NTMFS4D0N08XT1G ntmfs4d0n08x-d.pdf
NTMFS4D0N08XT1G
Hersteller: onsemi
Description: T10 80V STD NCH MOSFET SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 119A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 27A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 133µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 40 V
auf Bestellung 753 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.76 EUR
12+1.56 EUR
100+1.35 EUR
500+1.23 EUR
Mindestbestellmenge: 10
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NTMFS3D0N08XT1G ntmfs3d0n08x-d.pdf
NTMFS3D0N08XT1G
Hersteller: onsemi
Description: T10 80V STD NCH MOSFET SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 37A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 184µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 40 V
auf Bestellung 63000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+1.18 EUR
3000+1.11 EUR
4500+1.1 EUR
Mindestbestellmenge: 1500
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NTMFS3D0N08XT1G ntmfs3d0n08x-d.pdf
NTMFS3D0N08XT1G
Hersteller: onsemi
Description: T10 80V STD NCH MOSFET SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 37A, 10V
Power Dissipation (Max): 133W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 184µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 40 V
auf Bestellung 63979 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.43 EUR
10+2.19 EUR
100+1.67 EUR
500+1.34 EUR
Mindestbestellmenge: 6
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NTMFD5C466NLT1G ntmfd5c466nl-d.pdf
NTMFD5C466NLT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 14A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 25V
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.57 EUR
3000+0.52 EUR
4500+0.5 EUR
Mindestbestellmenge: 1500
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NTMFD5C466NLT1G ntmfd5c466nl-d.pdf
NTMFD5C466NLT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 14A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 40W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 52A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 997pF @ 25V
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
auf Bestellung 5905 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.02 EUR
14+1.27 EUR
100+0.84 EUR
500+0.66 EUR
Mindestbestellmenge: 9
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NVMFS6H836NT3G nvmfs6h836n-d.pdf
NVMFS6H836NT3G
Hersteller: onsemi
Description: T8 80V SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS6H836NT3G nvmfs6h836n-d.pdf
NVMFS6H836NT3G
Hersteller: onsemi
Description: T8 80V SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V
Power Dissipation (Max): 3.7W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 95µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1640 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 3970 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.57 EUR
10+1.87 EUR
100+1.28 EUR
500+1.02 EUR
1000+0.96 EUR
Mindestbestellmenge: 7
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NLV74VHCT00ADTR2G
NLV74VHCT00ADTR2G
Hersteller: onsemi
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.4V ~ 2V
Input Logic Level - Low: 0.53V ~ 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
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2500+0.34 EUR
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NLV74VHCT00ADTR2G
NLV74VHCT00ADTR2G
Hersteller: onsemi
Description: IC GATE NAND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.4V ~ 2V
Input Logic Level - Low: 0.53V ~ 0.8V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Qualification: AEC-Q100
auf Bestellung 2500 Stücke:
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1N6287AG ONSMS21119-1.pdf?t.download=true&u=5oefqw
1N6287AG
Hersteller: onsemi
Description: TVS DIODE 40.2VWM 64.8VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Voltage - Reverse Standoff (Typ): 40.2V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 44.7V
Voltage - Clamping (Max) @ Ipp: 64.8V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1040+0.43 EUR
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FSD176MRTLDTU FSD176MRTLDTU.pdf
FSD176MRTLDTU
Hersteller: onsemi
Description: IC OFFLINE SW FLBACK TO220F-6L
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Duty Cycle: 67%
Frequency - Switching: 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V
Supplier Device Package: TO-220F-6L (L-Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Power (Watts): 90 W
Produkt ist nicht verfügbar
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GBPC3510W gbpc3510-d.pdf
GBPC3510W
Hersteller: onsemi
Description: BRIDGE RECT 1P 1KV 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 192 Stücke:
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Anzahl Preis
2+9.82 EUR
50+5.22 EUR
100+4.78 EUR
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NTMFC013NP10M5L ntmfc013np10m5l-d.pdf
NTMFC013NP10M5L
Hersteller: onsemi
Description: MOSFET N/P-CH 100V 9A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta), 102W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 60A (Tc), 5A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 50V, 2443pF @ 50V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 8.5A, 10V, 36mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V, 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 158µA, 4V @ 158µA
Supplier Device Package: 8-WDFN (5x6)
Produkt ist nicht verfügbar
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NTMFC013NP10M5L ntmfc013np10m5l-d.pdf
NTMFC013NP10M5L
Hersteller: onsemi
Description: MOSFET N/P-CH 100V 9A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.7W (Ta), 102W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 60A (Tc), 5A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1345pF @ 50V, 2443pF @ 50V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 8.5A, 10V, 36mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 4.5V, 30nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 158µA, 4V @ 158µA
Supplier Device Package: 8-WDFN (5x6)
auf Bestellung 2605 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5 EUR
10+3.53 EUR
100+2.47 EUR
500+2.15 EUR
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UHB100SC12E1BC3N UHB100SC12E1BC3N-D.PDF
UHB100SC12E1BC3N
Hersteller: onsemi
Description: MOSFET 2P-CH 1200V 100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 P-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 417W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5859pF @ 800V
Rds On (Max) @ Id, Vgs: 12mOhm @ 70A, 12V
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 15V
Vgs(th) (Max) @ Id: 6V @ 40mA
Supplier Device Package: Module
auf Bestellung 110 Stücke:
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Anzahl Preis
1+334.51 EUR
24+277.28 EUR
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NV24C64MUW3VTBG nv24c64muw-d.pdf
NV24C64MUW3VTBG
Hersteller: onsemi
Description: IC EEPROM 64KBIT I2C 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NV24C64MUW3VTBG nv24c64muw-d.pdf
NV24C64MUW3VTBG
Hersteller: onsemi
Description: IC EEPROM 64KBIT I2C 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 64Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Grade: Automotive
Write Cycle Time - Word, Page: 4ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 8K x 8
Qualification: AEC-Q101
auf Bestellung 1940 Stücke:
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Anzahl Preis
28+0.65 EUR
29+0.62 EUR
30+0.6 EUR
50+0.59 EUR
100+0.58 EUR
250+0.56 EUR
500+0.55 EUR
1000+0.53 EUR
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MR5060 QLA694B-2G.pdf
Hersteller: onsemi
Description: LED RED DIFFUSED T-1 T/H R/A
Packaging: Bulk
Package / Case: Radial
Color: Red
Mounting Type: Through Hole, Right Angle
Millicandela Rating: 1.5mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 5V
Lens Color: Red
Current - Test: 13mA
Height (Max): 7.37mm
Supplier Device Package: T-1
Lens Transparency: Diffused
Lens Style: Round with Domed Top
Lens Size: 3.05mm Dia
Produkt ist nicht verfügbar
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MC74HC245ADWR2G-Q mc74hc245a-d.pdf
MC74HC245ADWR2G-Q
Hersteller: onsemi
Description: OCTAL 3-STATE NON-INVERTI
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.33 EUR
2000+0.32 EUR
5000+0.31 EUR
10000+0.3 EUR
25000+0.29 EUR
Mindestbestellmenge: 1000
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MC74HC245ADWR2G-Q mc74hc245a-d.pdf
MC74HC245ADWR2G-Q
Hersteller: onsemi
Description: OCTAL 3-STATE NON-INVERTI
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
35+0.51 EUR
39+0.45 EUR
100+0.39 EUR
250+0.37 EUR
500+0.35 EUR
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CNW136 CNW135%2C%20CNW136%2C%20CNW4502.pdf
CNW136
Hersteller: onsemi
Description: OPTOISO 5KV TRANS W/BASE 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.400", 10.16mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Input Type: DC
Current - Output / Channel: 10mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Produkt ist nicht verfügbar
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CNW136S CNW135%2C%20CNW136%2C%20CNW4502.pdf
CNW136S
Hersteller: onsemi
Description: OPTOISO 5KV TRANS W/BASE 8-SMD
Packaging: Bag
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Input Type: DC
Current - Output / Channel: 10mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Number of Channels: 1
Current - DC Forward (If) (Max): 100 mA
Produkt ist nicht verfügbar
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CAT25512HU5E-GT3 cat25512-d.pdf
CAT25512HU5E-GT3
Hersteller: onsemi
Description: IC EEPROM 512KBIT SPI 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (3x2)
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Access Time: 40 ns
Memory Organization: 64K x 8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.05 EUR
Mindestbestellmenge: 3000
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CAT25512HU5E-GT3 cat25512-d.pdf
CAT25512HU5E-GT3
Hersteller: onsemi
Description: IC EEPROM 512KBIT SPI 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 512Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2.5V ~ 5.5V
Technology: EEPROM
Clock Frequency: 10 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (3x2)
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Access Time: 40 ns
Memory Organization: 64K x 8
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.57 EUR
13+1.46 EUR
25+1.42 EUR
50+1.39 EUR
100+1.36 EUR
250+1.32 EUR
500+1.29 EUR
1000+1.26 EUR
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MC74HC574ADWR2G-Q mc74hc574a-d.pdf
MC74HC574ADWR2G-Q
Hersteller: onsemi
Description: OCTAL D-TYPE 3-STATE FF
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Grade: Automotive
Number of Bits per Element: 8
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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