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NCL2801CDFDR2G NCL2801CDFDR2G onsemi ncl2801-d.pdf Description: ENHANCED HIGH-EFFICIENCY POWER F
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10.5V
Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM)
Supplier Device Package: 8-SOIC
Current - Startup: 10 µA
Produkt ist nicht verfügbar
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FJY3002R FJY3002R onsemi fjy3002r-d.pdf Description: TRANS PREBIAS NPN 50V SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SC-89-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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1N4743A 1N4743A onsemi 1n4736at-d.pdf Description: DIODE ZENER 13V 1W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V
auf Bestellung 32844 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.39 EUR
74+0.24 EUR
119+0.15 EUR
500+0.11 EUR
1000+0.096 EUR
3000+0.08 EUR
6000+0.072 EUR
12000+0.065 EUR
Mindestbestellmenge: 46
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UJ4C075023B7S UJ4C075023B7S onsemi UJ4C075023B7S-D.PDF Description: 750V/23MOHM, N-OFF SIC CASCODE,
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Produkt ist nicht verfügbar
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UJ4C075023B7S UJ4C075023B7S onsemi UJ4C075023B7S-D.PDF Description: 750V/23MOHM, N-OFF SIC CASCODE,
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
auf Bestellung 445 Stücke:
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10+21.33 EUR
100+20.51 EUR
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NCV8505D2T50R4G NCV8505D2T50R4G onsemi ncv8505-d.pdf Description: IC REG LINEAR 5V 400MA D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 350 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: D2PAK-7
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Grade: Automotive
Voltage Dropout (Max): 0.6V @ 400mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 45 mA
Qualification: AEC-Q100
auf Bestellung 13500 Stücke:
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750+2.66 EUR
1500+2.59 EUR
2250+2.55 EUR
3750+2.51 EUR
5250+2.49 EUR
Mindestbestellmenge: 750
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NCV8505D2T50R4G NCV8505D2T50R4G onsemi ncv8505-d.pdf Description: IC REG LINEAR 5V 400MA D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 350 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: D2PAK-7
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Grade: Automotive
Voltage Dropout (Max): 0.6V @ 400mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 45 mA
Qualification: AEC-Q100
auf Bestellung 13876 Stücke:
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4+4.77 EUR
10+3.58 EUR
25+3.28 EUR
100+2.95 EUR
250+2.8 EUR
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NVBG095N065SC1 NVBG095N065SC1 onsemi nvbg095n065sc1-d.pdf Description: SIC MOS D2PAK-7L 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 4mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 5600 Stücke:
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800+8.72 EUR
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NVBG095N065SC1 NVBG095N065SC1 onsemi nvbg095n065sc1-d.pdf Description: SIC MOS D2PAK-7L 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 4mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 6323 Stücke:
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1+18 EUR
10+12.5 EUR
100+10.68 EUR
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UJ4C075044B7S UJ4C075044B7S onsemi UJ4C075044B7S-D.PDF Description: 750V/44MOHM, N-OFF SIC CASCODE,
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
auf Bestellung 19200 Stücke:
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800+11.08 EUR
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UJ4C075044B7S UJ4C075044B7S onsemi UJ4C075044B7S-D.PDF Description: 750V/44MOHM, N-OFF SIC CASCODE,
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
auf Bestellung 19263 Stücke:
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1+21.63 EUR
10+15.18 EUR
100+13.56 EUR
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BZX55C8V2 BZX55C8V2 onsemi BZX55C2V4%20-%20BZX55C56.pdf Description: DIODE ZENER 8.2V 500MW DO35
Tolerance: ±6%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6 V
Produkt ist nicht verfügbar
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BZX85C18-T50R BZX85C18-T50R onsemi bzx85c3v3-d.pdf Description: DIODE ZENER 18V 1W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V
auf Bestellung 21000 Stücke:
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5492+0.075 EUR
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BZX85C18 BZX85C18 onsemi BZX85C3V3-C56.pdf Description: DIODE ZENER 18V 1W DO41
Tolerance: ±6%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V
Produkt ist nicht verfügbar
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BZX85C18-T50R BZX85C18-T50R onsemi BZX85C3V3-C56.pdf Description: DIODE ZENER 18V 1W DO41
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V
Produkt ist nicht verfügbar
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LA1654FN-TLM-E-ON LA1654FN-TLM-E-ON onsemi Description: TIME CODE RECEPTION IC
Packaging: Bulk
auf Bestellung 1000 Stücke:
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189+2.42 EUR
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DM74ALS245AMSAX DM74ALS245AMSAX onsemi DM74ALS245A.pdf Description: IC TXRX NON-INVERT 5.5V 20-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 15mA, 24mA
Supplier Device Package: 20-SSOP
Produkt ist nicht verfügbar
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NP2100SAT3G NP2100SAT3G onsemi NPSERIES-D.pdf Description: THYRISTOR 180V 50A DO-214AA
Packaging: Bulk
Capacitance: 37pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 240V
Voltage - Off State: 180V
Voltage - On State: 4 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
auf Bestellung 9844 Stücke:
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1137+0.4 EUR
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NP2100SBT3G NP2100SBT3G onsemi NPSERIES-D.pdf Description: THYRISTOR 180V 80A DO-214AA
Packaging: Bulk
Capacitance: 59pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 240V
Voltage - Off State: 180V
Voltage - On State: 4 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
auf Bestellung 5000 Stücke:
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865+0.53 EUR
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NP2100SCT3G NP2100SCT3G onsemi NPSERIES-D.pdf Description: THYRISTOR 180V 100A DO-214AA
Packaging: Bulk
Capacitance: 97pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 240V
Voltage - Off State: 180V
Voltage - On State: 4 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
auf Bestellung 1735 Stücke:
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699+0.65 EUR
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NVMFWS1D7N04XMT1G NVMFWS1D7N04XMT1G onsemi nvmfws1d7n04xm-d.pdf Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 14A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
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1500+0.94 EUR
3000+0.92 EUR
4500+0.9 EUR
7500+0.89 EUR
10500+0.88 EUR
15000+0.87 EUR
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NVMFWS1D7N04XMT1G NVMFWS1D7N04XMT1G onsemi nvmfws1d7n04xm-d.pdf Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 14A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 22445 Stücke:
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10+1.9 EUR
13+1.37 EUR
25+1.24 EUR
100+1.1 EUR
250+1.03 EUR
500+0.99 EUR
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NVMFS5834NLWFT1G-UM NVMFS5834NLWFT1G-UM onsemi NTMFS5834NL-D.PDF Description: POWER MOSFET 40V, 75A, 9.3 MOHM,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1231 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS5834NLWFT1G-UM NVMFS5834NLWFT1G-UM onsemi NTMFS5834NL-D.PDF Description: POWER MOSFET 40V, 75A, 9.3 MOHM,
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1231 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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7WBD3306DTR2G 7WBD3306DTR2G onsemi 7wbd3306-d.pdf Description: IC BUS SWITCH 1 X 1:1 8-TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-TSSOP
auf Bestellung 170165 Stücke:
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1209+0.38 EUR
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7WBD3306AMUTCG 7WBD3306AMUTCG onsemi 7wbd3306-d.pdf Description: IC BUS SWITCH 1 X 1:1 8-UDFN
Packaging: Bulk
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-UDFN (1.8x1.2)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
818+0.56 EUR
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7WBD3306MUTAG 7WBD3306MUTAG onsemi 7wbd3306-d.pdf Description: IC BUS SWITCH 1 X 1:1 8-UDFN
Packaging: Bulk
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-UDFN (1.8x1.2)
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SECO-NCP51561BADWR2G-GEVB SECO-NCP51561BADWR2G-GEVB onsemi evbum2756-d.pdf Description: APPLICATION DAUGHTER-CARD FOR NC
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: NCP51561
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NZ8F9V1MX2WT5G NZ8F9V1MX2WT5G onsemi nz8f2v4mx2w-d.pdf Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
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NZ8F9V1MX2WT5G NZ8F9V1MX2WT5G onsemi nz8f2v4mx2w-d.pdf Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
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NSVBASH21MX2WT5G NSVBASH21MX2WT5G onsemi bash16mx2w-d.pdf Description: DIODE STANDARD 250V 0.2A X2DFNW2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 2-X2DFNW (1x0.6)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
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NSVBASH21MX2WT5G NSVBASH21MX2WT5G onsemi bash16mx2w-d.pdf Description: DIODE STANDARD 250V 0.2A X2DFNW2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 2-X2DFNW (1x0.6)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
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SZNZ8F9V1MX2WT5G SZNZ8F9V1MX2WT5G onsemi nz8f2v4mx2w-d.pdf Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
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SZNZ8F9V1MX2WT5G SZNZ8F9V1MX2WT5G onsemi nz8f2v4mx2w-d.pdf Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
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SZNZ8F5V1MX2WT5G SZNZ8F5V1MX2WT5G onsemi nz8f2v4mx2w-d.pdf Description: DIODE ZENER 5.1V 250MW 2-X2DFNW
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Qualification: AEC-Q101
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SZNZ8F5V1MX2WT5G SZNZ8F5V1MX2WT5G onsemi nz8f2v4mx2w-d.pdf Description: DIODE ZENER 5.1V 250MW 2-X2DFNW
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Qualification: AEC-Q101
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AR0145CS1C00SMKA0-CP-E AR0145CS1C00SMKA0-CP-E onsemi ar0145cs-pd-d.pdf Description: 1MP, 1/4.3, GLOBAL SHUTTER IMAGE
Packaging: Tray
Package / Case: 47-VFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 2.8µm x 2.8µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 47-ODCSP (5.74x4.42)
Frames per Second: 120.0
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AR0145CS1C28SMKA0-CP-E AR0145CS1C28SMKA0-CP-E onsemi ar0145cs-pd-d.pdf Description: 1MP, 1/4.3, GLOBAL SHUTTER IMAGE
Packaging: Tray
Package / Case: 47-VFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 2.8µm x 2.8µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 47-ODCSP (5.74x4.42)
Frames per Second: 120.0
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FOD3120TS FOD3120TS onsemi fod3120-d.pdf Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Pulse Width Distortion (Max): 100ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
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CAT3200HU2-GT3 CAT3200HU2-GT3 onsemi cat3200hu2-d.pdf Description: IC REG CHARGE PUMP ADJ/5V 8UDFN
Packaging: Bulk
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable (Fixed)
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2MHz
Voltage - Input (Max): 4.5V
Topology: Charge Pump
Supplier Device Package: 8-UDFN (2x2)
Synchronous Rectifier: No
Voltage - Output (Max): 6V
Voltage - Input (Min): 2.2V
Voltage - Output (Min/Fixed): 2.7V (5V)
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MBRF10H150CTG MBRF10H150CTG onsemi mbrf10h150ct-d.pdf Description: DIODE ARR SCHOTT 150V 5A TO220FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -20°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 45 µA @ 150 V
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NTZD3155CT2G-M07 onsemi Description: RECTIFIERS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MC74HC574ADTR2G MC74HC574ADTR2G onsemi mc74hc574a-d.pdf Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Number of Bits per Element: 8
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MC74HC574ADTR2G MC74HC574ADTR2G onsemi mc74hc574a-d.pdf Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Number of Bits per Element: 8
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MC74HC574ADTR2G-Q onsemi Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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NVBG030N120M3S-IE NVBG030N120M3S-IE onsemi nvbg030n120m3s-d.pdf Description: SIC MOS D2PAK-7L 30MOHM M3S 1200
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Qualification: AEC-Q101
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NVBG030N120M3S-IE NVBG030N120M3S-IE onsemi nvbg030n120m3s-d.pdf Description: SIC MOS D2PAK-7L 30MOHM M3S 1200
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Qualification: AEC-Q101
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MOC3022M MOC3022M onsemi moc3023m-d.pdf Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
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HUF75333S3 HUF75333S3 onsemi HUF75333%28G3%2CP3%2CS3S%2CS3%29.pdf Description: MOSFET N-CH 55V 66A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 66A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
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RS1G RS1G onsemi rs1m-d.pdf Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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RS1G RS1G onsemi rs1m-d.pdf Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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PZTA42 PZTA42 onsemi PZTA42T1G.pdf Description: TRANS NPN 300V 0.5A SOT-223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
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MC74VHC259DTG MC74VHC259DTG onsemi mc74vhc259-d.pdf Description: IC D-TYPE ADDR 1:8 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type, Addressable
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4.9ns
Supplier Device Package: 16-TSSOP
auf Bestellung 68216 Stücke:
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685+0.67 EUR
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MC74VHC259DG MC74VHC259DG onsemi mc74vhc259-d.pdf Description: IC D-TYPE ADDR 1:8 16-SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type, Addressable
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4.9ns
Supplier Device Package: 16-SOIC
auf Bestellung 19488 Stücke:
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MC74ACT259DR2 MC74ACT259DR2 onsemi mc74ac259-d.pdf Description: IC D-TYPE ADDR 1:8 16-SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type, Addressable
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Delay Time - Propagation: 6.5ns
Supplier Device Package: 16-SOIC
auf Bestellung 1500 Stücke:
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MC14050BDTR2G MC14050BDTR2G onsemi mc14049b-d.pdf Description: IC BUFF NON-INVERT 18V 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 18V
Number of Bits per Element: 1
Current - Output High, Low: 10mA, 40mA
Supplier Device Package: 16-TSSOP
auf Bestellung 55916 Stücke:
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UJ4C075033L8S UJ4C075033L8S onsemi UJ4C075033L8S-D.PDF Description: 750V/33MO,SICFET,G4,TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 230A, 12V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Produkt ist nicht verfügbar
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UJ4C075033L8S UJ4C075033L8S onsemi UJ4C075033L8S-D.PDF Description: 750V/33MO,SICFET,G4,TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 230A, 12V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
auf Bestellung 1245 Stücke:
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FSQ0165RLX FSQ0165RLX onsemi fsq0365-d.pdf Description: IC OFFLINE SWITCH FLYBACK 8LSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Frequency - Switching: 55kHz ~ 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: 8-LSOP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Control Features: Sync
Power (Watts): 15 W
Produkt ist nicht verfügbar
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NTTFS6H880NLTAG NTTFS6H880NLTAG onsemi nttfs6h880nl-d.pdf Description: MOSFET N-CH 80V 6.6A/22A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
auf Bestellung 7327 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.43 EUR
20+0.89 EUR
100+0.58 EUR
500+0.45 EUR
Mindestbestellmenge: 13
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NCL2801CDFDR2G ncl2801-d.pdf
NCL2801CDFDR2G
Hersteller: onsemi
Description: ENHANCED HIGH-EFFICIENCY POWER F
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Supply: 10.5V
Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM)
Supplier Device Package: 8-SOIC
Current - Startup: 10 µA
Produkt ist nicht verfügbar
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FJY3002R fjy3002r-d.pdf
FJY3002R
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SC89-3
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SC-89-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
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1N4743A 1n4736at-d.pdf
1N4743A
Hersteller: onsemi
Description: DIODE ZENER 13V 1W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V
auf Bestellung 32844 Stücke:
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Anzahl Preis
46+0.39 EUR
74+0.24 EUR
119+0.15 EUR
500+0.11 EUR
1000+0.096 EUR
3000+0.08 EUR
6000+0.072 EUR
12000+0.065 EUR
Mindestbestellmenge: 46
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UJ4C075023B7S UJ4C075023B7S-D.PDF
UJ4C075023B7S
Hersteller: onsemi
Description: 750V/23MOHM, N-OFF SIC CASCODE,
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Produkt ist nicht verfügbar
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UJ4C075023B7S UJ4C075023B7S-D.PDF
UJ4C075023B7S
Hersteller: onsemi
Description: 750V/23MOHM, N-OFF SIC CASCODE,
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
auf Bestellung 445 Stücke:
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Anzahl Preis
1+29.83 EUR
10+21.33 EUR
100+20.51 EUR
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NCV8505D2T50R4G ncv8505-d.pdf
NCV8505D2T50R4G
Hersteller: onsemi
Description: IC REG LINEAR 5V 400MA D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 350 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: D2PAK-7
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Grade: Automotive
Voltage Dropout (Max): 0.6V @ 400mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 45 mA
Qualification: AEC-Q100
auf Bestellung 13500 Stücke:
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Anzahl Preis
750+2.66 EUR
1500+2.59 EUR
2250+2.55 EUR
3750+2.51 EUR
5250+2.49 EUR
Mindestbestellmenge: 750
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NCV8505D2T50R4G ncv8505-d.pdf
NCV8505D2T50R4G
Hersteller: onsemi
Description: IC REG LINEAR 5V 400MA D2PAK-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 350 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: D2PAK-7
Voltage - Output (Min/Fixed): 5V
Control Features: Enable, Reset
Grade: Automotive
Voltage Dropout (Max): 0.6V @ 400mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 45 mA
Qualification: AEC-Q100
auf Bestellung 13876 Stücke:
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Anzahl Preis
4+4.77 EUR
10+3.58 EUR
25+3.28 EUR
100+2.95 EUR
250+2.8 EUR
Mindestbestellmenge: 4
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NVBG095N065SC1 nvbg095n065sc1-d.pdf
NVBG095N065SC1
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 4mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 5600 Stücke:
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Anzahl Preis
800+8.72 EUR
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NVBG095N065SC1 nvbg095n065sc1-d.pdf
NVBG095N065SC1
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 4mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 6323 Stücke:
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Anzahl Preis
1+18 EUR
10+12.5 EUR
100+10.68 EUR
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UJ4C075044B7S UJ4C075044B7S-D.PDF
UJ4C075044B7S
Hersteller: onsemi
Description: 750V/44MOHM, N-OFF SIC CASCODE,
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
auf Bestellung 19200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+11.08 EUR
Mindestbestellmenge: 800
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UJ4C075044B7S UJ4C075044B7S-D.PDF
UJ4C075044B7S
Hersteller: onsemi
Description: 750V/44MOHM, N-OFF SIC CASCODE,
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
auf Bestellung 19263 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.63 EUR
10+15.18 EUR
100+13.56 EUR
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BZX55C8V2 BZX55C2V4%20-%20BZX55C56.pdf
BZX55C8V2
Hersteller: onsemi
Description: DIODE ZENER 8.2V 500MW DO35
Tolerance: ±6%
Packaging: Bulk
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6 V
Produkt ist nicht verfügbar
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BZX85C18-T50R bzx85c3v3-d.pdf
BZX85C18-T50R
Hersteller: onsemi
Description: DIODE ZENER 18V 1W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5492+0.075 EUR
Mindestbestellmenge: 5492
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BZX85C18 BZX85C3V3-C56.pdf
BZX85C18
Hersteller: onsemi
Description: DIODE ZENER 18V 1W DO41
Tolerance: ±6%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V
Produkt ist nicht verfügbar
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BZX85C18-T50R BZX85C3V3-C56.pdf
BZX85C18-T50R
Hersteller: onsemi
Description: DIODE ZENER 18V 1W DO41
Tolerance: ±6%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V
Produkt ist nicht verfügbar
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LA1654FN-TLM-E-ON
LA1654FN-TLM-E-ON
Hersteller: onsemi
Description: TIME CODE RECEPTION IC
Packaging: Bulk
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
189+2.42 EUR
Mindestbestellmenge: 189
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DM74ALS245AMSAX DM74ALS245A.pdf
DM74ALS245AMSAX
Hersteller: onsemi
Description: IC TXRX NON-INVERT 5.5V 20-SSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 15mA, 24mA
Supplier Device Package: 20-SSOP
Produkt ist nicht verfügbar
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NP2100SAT3G NPSERIES-D.pdf
NP2100SAT3G
Hersteller: onsemi
Description: THYRISTOR 180V 50A DO-214AA
Packaging: Bulk
Capacitance: 37pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 240V
Voltage - Off State: 180V
Voltage - On State: 4 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
auf Bestellung 9844 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1137+0.4 EUR
Mindestbestellmenge: 1137
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NP2100SBT3G NPSERIES-D.pdf
NP2100SBT3G
Hersteller: onsemi
Description: THYRISTOR 180V 80A DO-214AA
Packaging: Bulk
Capacitance: 59pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 240V
Voltage - Off State: 180V
Voltage - On State: 4 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
865+0.53 EUR
Mindestbestellmenge: 865
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NP2100SCT3G NPSERIES-D.pdf
NP2100SCT3G
Hersteller: onsemi
Description: THYRISTOR 180V 100A DO-214AA
Packaging: Bulk
Capacitance: 97pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 240V
Voltage - Off State: 180V
Voltage - On State: 4 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
auf Bestellung 1735 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
699+0.65 EUR
Mindestbestellmenge: 699
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NVMFWS1D7N04XMT1G nvmfws1d7n04xm-d.pdf
NVMFWS1D7N04XMT1G
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 14A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.94 EUR
3000+0.92 EUR
4500+0.9 EUR
7500+0.89 EUR
10500+0.88 EUR
15000+0.87 EUR
Mindestbestellmenge: 1500
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NVMFWS1D7N04XMT1G nvmfws1d7n04xm-d.pdf
NVMFWS1D7N04XMT1G
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 14A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 22445 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.9 EUR
13+1.37 EUR
25+1.24 EUR
100+1.1 EUR
250+1.03 EUR
500+0.99 EUR
Mindestbestellmenge: 10
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NVMFS5834NLWFT1G-UM NTMFS5834NL-D.PDF
NVMFS5834NLWFT1G-UM
Hersteller: onsemi
Description: POWER MOSFET 40V, 75A, 9.3 MOHM,
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1231 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS5834NLWFT1G-UM NTMFS5834NL-D.PDF
NVMFS5834NLWFT1G-UM
Hersteller: onsemi
Description: POWER MOSFET 40V, 75A, 9.3 MOHM,
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 107W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1231 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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7WBD3306DTR2G 7wbd3306-d.pdf
7WBD3306DTR2G
Hersteller: onsemi
Description: IC BUS SWITCH 1 X 1:1 8-TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-TSSOP
auf Bestellung 170165 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1209+0.38 EUR
Mindestbestellmenge: 1209
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7WBD3306AMUTCG 7wbd3306-d.pdf
7WBD3306AMUTCG
Hersteller: onsemi
Description: IC BUS SWITCH 1 X 1:1 8-UDFN
Packaging: Bulk
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-UDFN (1.8x1.2)
auf Bestellung 3000 Stücke:
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Anzahl Preis
818+0.56 EUR
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7WBD3306MUTAG 7wbd3306-d.pdf
7WBD3306MUTAG
Hersteller: onsemi
Description: IC BUS SWITCH 1 X 1:1 8-UDFN
Packaging: Bulk
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 2
Voltage Supply Source: Single Supply
Supplier Device Package: 8-UDFN (1.8x1.2)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
741+0.61 EUR
Mindestbestellmenge: 741
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SECO-NCP51561BADWR2G-GEVB evbum2756-d.pdf
SECO-NCP51561BADWR2G-GEVB
Hersteller: onsemi
Description: APPLICATION DAUGHTER-CARD FOR NC
Packaging: Bulk
Function: Gate Driver
Type: Power Management
Contents: Board(s)
Utilized IC / Part: NCP51561
Produkt ist nicht verfügbar
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NZ8F9V1MX2WT5G nz8f2v4mx2w-d.pdf
NZ8F9V1MX2WT5G
Hersteller: onsemi
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Produkt ist nicht verfügbar
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NZ8F9V1MX2WT5G nz8f2v4mx2w-d.pdf
NZ8F9V1MX2WT5G
Hersteller: onsemi
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
auf Bestellung 4565 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
74+0.24 EUR
190+0.093 EUR
500+0.084 EUR
1000+0.058 EUR
2000+0.054 EUR
Mindestbestellmenge: 48
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NSVBASH21MX2WT5G bash16mx2w-d.pdf
NSVBASH21MX2WT5G
Hersteller: onsemi
Description: DIODE STANDARD 250V 0.2A X2DFNW2
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 2-X2DFNW (1x0.6)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NSVBASH21MX2WT5G bash16mx2w-d.pdf
NSVBASH21MX2WT5G
Hersteller: onsemi
Description: DIODE STANDARD 250V 0.2A X2DFNW2
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 2-X2DFNW (1x0.6)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Qualification: AEC-Q101
auf Bestellung 6460 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
56+0.32 EUR
100+0.22 EUR
500+0.17 EUR
1000+0.14 EUR
2000+0.13 EUR
Mindestbestellmenge: 28
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SZNZ8F9V1MX2WT5G nz8f2v4mx2w-d.pdf
SZNZ8F9V1MX2WT5G
Hersteller: onsemi
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SZNZ8F9V1MX2WT5G nz8f2v4mx2w-d.pdf
SZNZ8F9V1MX2WT5G
Hersteller: onsemi
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SZNZ8F5V1MX2WT5G nz8f2v4mx2w-d.pdf
SZNZ8F5V1MX2WT5G
Hersteller: onsemi
Description: DIODE ZENER 5.1V 250MW 2-X2DFNW
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Qualification: AEC-Q101
auf Bestellung 136000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8000+0.088 EUR
16000+0.087 EUR
24000+0.085 EUR
40000+0.079 EUR
56000+0.071 EUR
80000+0.069 EUR
Mindestbestellmenge: 8000
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SZNZ8F5V1MX2WT5G nz8f2v4mx2w-d.pdf
SZNZ8F5V1MX2WT5G
Hersteller: onsemi
Description: DIODE ZENER 5.1V 250MW 2-X2DFNW
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: 2-X2DFNW (1x0.6)
Grade: Automotive
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Qualification: AEC-Q101
auf Bestellung 136000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
Mindestbestellmenge: 34
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AR0145CS1C00SMKA0-CP-E ar0145cs-pd-d.pdf
AR0145CS1C00SMKA0-CP-E
Hersteller: onsemi
Description: 1MP, 1/4.3, GLOBAL SHUTTER IMAGE
Packaging: Tray
Package / Case: 47-VFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 2.8µm x 2.8µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 47-ODCSP (5.74x4.42)
Frames per Second: 120.0
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+60.58 EUR
10+49.39 EUR
25+46.6 EUR
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AR0145CS1C28SMKA0-CP-E ar0145cs-pd-d.pdf
AR0145CS1C28SMKA0-CP-E
Hersteller: onsemi
Description: 1MP, 1/4.3, GLOBAL SHUTTER IMAGE
Packaging: Tray
Package / Case: 47-VFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 2.8µm x 2.8µm
Active Pixel Array: 1280H x 800V
Supplier Device Package: 47-ODCSP (5.74x4.42)
Frames per Second: 120.0
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+60.58 EUR
10+49.39 EUR
25+46.6 EUR
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FOD3120TS fod3120-d.pdf
FOD3120TS
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Pulse Width Distortion (Max): 100ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
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CAT3200HU2-GT3 cat3200hu2-d.pdf
CAT3200HU2-GT3
Hersteller: onsemi
Description: IC REG CHARGE PUMP ADJ/5V 8UDFN
Packaging: Bulk
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable (Fixed)
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2MHz
Voltage - Input (Max): 4.5V
Topology: Charge Pump
Supplier Device Package: 8-UDFN (2x2)
Synchronous Rectifier: No
Voltage - Output (Max): 6V
Voltage - Input (Min): 2.2V
Voltage - Output (Min/Fixed): 2.7V (5V)
auf Bestellung 543158 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
235+1.9 EUR
Mindestbestellmenge: 235
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MBRF10H150CTG mbrf10h150ct-d.pdf
MBRF10H150CTG
Hersteller: onsemi
Description: DIODE ARR SCHOTT 150V 5A TO220FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -20°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Current - Reverse Leakage @ Vr: 45 µA @ 150 V
auf Bestellung 103959 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
329+1.38 EUR
Mindestbestellmenge: 329
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NTZD3155CT2G-M07
Hersteller: onsemi
Description: RECTIFIERS
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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MC74HC574ADTR2G mc74hc574a-d.pdf
MC74HC574ADTR2G
Hersteller: onsemi
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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MC74HC574ADTR2G mc74hc574a-d.pdf
MC74HC574ADTR2G
Hersteller: onsemi
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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MC74HC574ADTR2G-Q
Hersteller: onsemi
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Number of Bits per Element: 8
Produkt ist nicht verfügbar
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NVBG030N120M3S-IE nvbg030n120m3s-d.pdf
NVBG030N120M3S-IE
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 30MOHM M3S 1200
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+24.9 EUR
Mindestbestellmenge: 800
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NVBG030N120M3S-IE nvbg030n120m3s-d.pdf
NVBG030N120M3S-IE
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 30MOHM M3S 1200
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+38.24 EUR
10+30.74 EUR
25+28.87 EUR
100+26.81 EUR
250+25.83 EUR
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MOC3022M moc3023m-d.pdf
MOC3022M
Hersteller: onsemi
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 96216 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.25 EUR
50+0.7 EUR
100+0.65 EUR
500+0.54 EUR
1000+0.51 EUR
2000+0.48 EUR
5000+0.44 EUR
10000+0.43 EUR
25000+0.4 EUR
Mindestbestellmenge: 15
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HUF75333S3 HUF75333%28G3%2CP3%2CS3S%2CS3%29.pdf
HUF75333S3
Hersteller: onsemi
Description: MOSFET N-CH 55V 66A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 66A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 66A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
Produkt ist nicht verfügbar
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RS1G rs1m-d.pdf
RS1G
Hersteller: onsemi
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7500+0.12 EUR
15000+0.11 EUR
Mindestbestellmenge: 7500
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RS1G rs1m-d.pdf
RS1G
Hersteller: onsemi
Description: DIODE STANDARD 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 18150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
65+0.27 EUR
500+0.2 EUR
1000+0.17 EUR
2000+0.16 EUR
Mindestbestellmenge: 36
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PZTA42 PZTA42T1G.pdf
PZTA42
Hersteller: onsemi
Description: TRANS NPN 300V 0.5A SOT-223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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MC74VHC259DTG mc74vhc259-d.pdf
MC74VHC259DTG
Hersteller: onsemi
Description: IC D-TYPE ADDR 1:8 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type, Addressable
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4.9ns
Supplier Device Package: 16-TSSOP
auf Bestellung 68216 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
685+0.67 EUR
Mindestbestellmenge: 685
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MC74VHC259DG mc74vhc259-d.pdf
MC74VHC259DG
Hersteller: onsemi
Description: IC D-TYPE ADDR 1:8 16-SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type, Addressable
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 4.9ns
Supplier Device Package: 16-SOIC
auf Bestellung 19488 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
660+0.68 EUR
Mindestbestellmenge: 660
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MC74ACT259DR2 mc74ac259-d.pdf
MC74ACT259DR2
Hersteller: onsemi
Description: IC D-TYPE ADDR 1:8 16-SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Standard
Mounting Type: Surface Mount
Circuit: 1:8
Logic Type: D-Type, Addressable
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Delay Time - Propagation: 6.5ns
Supplier Device Package: 16-SOIC
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
505+0.9 EUR
Mindestbestellmenge: 505
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MC14050BDTR2G mc14049b-d.pdf
MC14050BDTR2G
Hersteller: onsemi
Description: IC BUFF NON-INVERT 18V 16-TSSOP
Packaging: Bulk
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 6
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 3V ~ 18V
Number of Bits per Element: 1
Current - Output High, Low: 10mA, 40mA
Supplier Device Package: 16-TSSOP
auf Bestellung 55916 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
771+0.59 EUR
Mindestbestellmenge: 771
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UJ4C075033L8S UJ4C075033L8S-D.PDF
UJ4C075033L8S
Hersteller: onsemi
Description: 750V/33MO,SICFET,G4,TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 230A, 12V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Produkt ist nicht verfügbar
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UJ4C075033L8S UJ4C075033L8S-D.PDF
UJ4C075033L8S
Hersteller: onsemi
Description: 750V/33MO,SICFET,G4,TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 230A, 12V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
auf Bestellung 1245 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.96 EUR
10+15.45 EUR
100+13.91 EUR
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FSQ0165RLX fsq0365-d.pdf
FSQ0165RLX
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8LSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Frequency - Switching: 55kHz ~ 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: 8-LSOP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12 V
Control Features: Sync
Power (Watts): 15 W
Produkt ist nicht verfügbar
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NTTFS6H880NLTAG nttfs6h880nl-d.pdf
NTTFS6H880NLTAG
Hersteller: onsemi
Description: MOSFET N-CH 80V 6.6A/22A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 431 pF @ 40 V
auf Bestellung 7327 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.43 EUR
20+0.89 EUR
100+0.58 EUR
500+0.45 EUR
Mindestbestellmenge: 13
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