FQPF13N06 ON Semiconductor
| Anzahl | Preis |
|---|---|
| 842+ | 0.64 EUR |
| 1000+ | 0.59 EUR |
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Technische Details FQPF13N06 ON Semiconductor
Description: MOSFET N-CH 60V 9.4A TO220F, Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220F-3, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 24W (Tc), Rds On (Max) @ Id, Vgs: 135mOhm @ 4.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.
Weitere Produktangebote FQPF13N06 nach Preis ab 0.76 EUR bis 0.76 EUR
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FQPF13N06 | Fairchild Semiconductor |
 Description: MOSFET N-CH 60V 9.4A TO220FInput Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220F-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 24W (Tc) Rds On (Max) @ Id, Vgs: 135mOhm @ 4.7A, 10V Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube |
auf Bestellung 2334 Stücke: Lieferzeit 10-14 Tag (e) |
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| FQPF13N06 |
|
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 60V 9.4A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 24W (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 4.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Description: MOSFET N-CH 60V 9.4A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 24W (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 4.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 2334 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 606+ | 0.76 EUR |