| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.25 EUR |
| 25+ | 20.23 EUR |
| 100+ | 17.45 EUR |
| 250+ | 16.06 EUR |
| 500+ | 15.58 EUR |
| 2400+ | 15.57 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details UF4C120053B7S Qorvo
Description: 1200V/53MO,SICFET,G4,TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Cascode SiCJFET), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tj), Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 12V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 6V @ 10mA, Supplier Device Package: D2PAK-7L, Drive Voltage (Max Rds On, Min Rds On): 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V, Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 800 V.
Weitere Produktangebote UF4C120053B7S nach Preis ab 15.93 EUR bis 28.61 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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UF4C120053B7S | onsemi |
 SiC MOSFETs 1200V/53MOSICFETG4TO263-7 |
auf Bestellung 724 Stücke: Lieferzeit 10-14 Tag (e) |
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UF4C120053B7S | onsemi |
Description: 1200V/53MO,SICFET,G4,TO263-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tj) Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 12V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7L Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 800 V |
auf Bestellung 443 Stücke: Lieferzeit 10-14 Tag (e) |
|
| UF4C120053B7S |
|
Hersteller: onsemi
SiC MOSFETs 1200V/53MOSICFETG4TO263-7
SiC MOSFETs 1200V/53MOSICFETG4TO263-7
auf Bestellung 724 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 26.83 EUR |
| 10+ | 18.9 EUR |
| 100+ | 17.06 EUR |
| 500+ | 16.84 EUR |
| 800+ | 15.93 EUR |
| UF4C120053B7S |
|
Hersteller: onsemi
Description: 1200V/53MO,SICFET,G4,TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tj)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 12V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 800 V
Description: 1200V/53MO,SICFET,G4,TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tj)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 12V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 800 V
auf Bestellung 443 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 28.61 EUR |
| 10+ | 20.13 EUR |
| 100+ | 16.99 EUR |