| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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KSC945CGBU | onsemi |
Description: TRANS NPN 50V 0.15A TO-92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW |
auf Bestellung 240470 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN7602BN | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8DIPPackaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -25°C ~ 125°C (TA) Duty Cycle: 75% Frequency - Switching: 65kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8V ~ 20V Supplier Device Package: 8-DIP Fault Protection: Over Load, Over Voltage Voltage - Start Up: 12 V Power (Watts): 48 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BUT11A | onsemi |
Description: TRANS NPN 450V 5A TO-220-3Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A Current - Collector Cutoff (Max): 1mA Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 100 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BUT11ATU | onsemi |
Description: TRANS NPN 450V 5A TO-220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A Current - Collector Cutoff (Max): 1mA Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 450 V Power - Max: 100 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NCL2801CDFDR2G | onsemi |
Description: ENHANCED HIGH-EFFICIENCY POWER FMode: Critical Conduction (CRM), Discontinuous Conduction (DCM) Voltage - Supply: 10.5V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Current - Startup: 10 µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NCL2801CDFDR2G | onsemi |
Description: ENHANCED HIGH-EFFICIENCY POWER FCurrent - Startup: 10 µA Supplier Device Package: 8-SOIC Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM) Voltage - Supply: 10.5V Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FJY3002R | onsemi |
Description: TRANS PREBIAS NPN 50V SC89-3Resistors Included: R1 and R2 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 10 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SC-89-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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1N4743A | onsemi |
Description: DIODE ZENER 13V 1W DO41Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 13 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V |
auf Bestellung 9002 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ4C075023B7S | onsemi |
Description: 750V/23MOHM, N-OFF SIC CASCODE,Technology: SiCFET (Cascode SiCJFET) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Drain to Source Voltage (Vdss): 750 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 12V Supplier Device Package: D2PAK-7 Vgs(th) (Max) @ Id: 6V @ 10mA Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) FET Type: N-Channel |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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UJ4C075023B7S | onsemi |
Description: 750V/23MOHM, N-OFF SIC CASCODE,Drain to Source Voltage (Vdss): 750 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 12V Supplier Device Package: D2PAK-7 Vgs(th) (Max) @ Id: 6V @ 10mA Power Dissipation (Max): 278W (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Packaging: Cut Tape (CT) |
auf Bestellung 445 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV8505D2T50R4G | onsemi |
Description: IC REG LINEAR 5V 400MA D2PAK-7Qualification: AEC-Q100 Current - Supply (Max): 45 mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Voltage Dropout (Max): 0.6V @ 400mA Grade: Automotive Control Features: Enable, Reset Voltage - Output (Min/Fixed): 5V Supplier Device Package: D2PAK-7 Number of Regulators: 1 Voltage - Input (Max): 45V Current - Quiescent (Iq): 350 µA Output Configuration: Positive Operating Temperature: -40°C ~ 150°C Current - Output: 400mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
auf Bestellung 13500 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV8505D2T50R4G | onsemi |
Description: IC REG LINEAR 5V 400MA D2PAK-7Output Configuration: Positive Operating Temperature: -40°C ~ 150°C Current - Output: 400mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) Qualification: AEC-Q100 Current - Supply (Max): 45 mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Voltage Dropout (Max): 0.6V @ 400mA Grade: Automotive Control Features: Enable, Reset Voltage - Output (Min/Fixed): 5V Supplier Device Package: D2PAK-7 Number of Regulators: 1 Voltage - Input (Max): 45V Current - Quiescent (Iq): 350 µA |
auf Bestellung 13876 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG095N065SC1 | onsemi |
Description: SIC MOS D2PAK-7L 650VGate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Grade: Automotive Supplier Device Package: D2PAK-7 Vgs(th) (Max) @ Id: 4.3V @ 4mA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V |
auf Bestellung 5600 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG095N065SC1 | onsemi |
Description: SIC MOS D2PAK-7L 650VQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V Drain to Source Voltage (Vdss): 650 V Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Grade: Automotive Supplier Device Package: D2PAK-7 Vgs(th) (Max) @ Id: 4.3V @ 4mA Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) |
auf Bestellung 6323 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ4C075044B7S | onsemi |
Description: 750V/44MOHM, N-OFF SIC CASCODE,Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc) FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Drain to Source Voltage (Vdss): 750 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 12V Supplier Device Package: D2PAK-7 Vgs(th) (Max) @ Id: 6V @ 10mA Power Dissipation (Max): 181W (Tc) |
auf Bestellung 19200 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ4C075044B7S | onsemi |
Description: 750V/44MOHM, N-OFF SIC CASCODE,Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Drain to Source Voltage (Vdss): 750 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 12V Supplier Device Package: D2PAK-7 Vgs(th) (Max) @ Id: 6V @ 10mA Power Dissipation (Max): 181W (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc) FET Type: N-Channel Technology: SiCFET (Cascode SiCJFET) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) |
auf Bestellung 19263 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX85C18-T50R | onsemi |
Description: DIODE ZENER 18V 1W DO204ALPackaging: Bulk Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-204AL (DO-41) Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX85C18 | onsemi |
Description: DIODE ZENER 18V 1W DO41Packaging: Bulk Tolerance: ±6% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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BZX85C18-T50R | onsemi |
Description: DIODE ZENER 18V 1W DO41Packaging: Tape & Reel (TR) Tolerance: ±6% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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LA1654FN-TLM-E-ON | onsemi |
Description: TIME CODE RECEPTION IC Packaging: Bulk |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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DM74ALS245AMSAX | onsemi |
Description: IC TXRX 4.5V/5.5V 20-SSOPSupplier Device Package: 20-SSOP Current - Output High, Low: 15mA, 24mA Number of Bits per Element: 8 Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Logic Type: Transceiver, Non-Inverting Number of Elements: 1 Mounting Type: Surface Mount Output Type: 3-State Package / Case: 20-SSOP (0.209", 5.30mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NP2100SAT3G | onsemi |
Description: THYRISTOR 180V 50A DO-214AAPackaging: Bulk Current - Peak Pulse (10/1000µs): 50 A Current - Hold (Ih): 150 mA Supplier Device Package: SMB Voltage - On State: 4 V Voltage - Off State: 180V Voltage - Breakover: 240V Number of Elements: 1 Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Capacitance: 37pF |
auf Bestellung 9844 Stücke: Lieferzeit 10-14 Tag (e) |
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NP2100SBT3G | onsemi |
Description: THYRISTOR 180V 80A DO-214AACurrent - Peak Pulse (10/1000µs): 80 A Current - Hold (Ih): 150 mA Supplier Device Package: SMB Voltage - On State: 4 V Voltage - Off State: 180V Voltage - Breakover: 240V Number of Elements: 1 Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Capacitance: 59pF Packaging: Bulk |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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NP2100SCT3G | onsemi |
Description: THYRISTOR 180V 100A DO-214AACurrent - Peak Pulse (10/1000µs): 100 A Current - Hold (Ih): 150 mA Supplier Device Package: SMB Voltage - On State: 4 V Voltage - Off State: 180V Voltage - Breakover: 240V Number of Elements: 1 Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Capacitance: 97pF Packaging: Bulk |
auf Bestellung 1735 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFWS1D7N04XMT1G | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 40FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Vgs(th) (Max) @ Id: 3.5V @ 70µA Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 154A (Tc) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFWS1D7N04XMT1G | onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 40Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Vgs(th) (Max) @ Id: 3.5V @ 70µA Power Dissipation (Max): 75W (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 154A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) |
auf Bestellung 4297 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS5834NLWFT1G-UM | onsemi |
Description: POWER MOSFET 40V, 75A, 9.3 MOHM,Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1231 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.6W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NVMFS5834NLWFT1G-UM | onsemi |
Description: POWER MOSFET 40V, 75A, 9.3 MOHM,Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 3.6W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN, 5 Leads Packaging: Bulk Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1231 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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7WBD3306DTR2G | onsemi |
Description: IC BUS SWITCH 1 X 1:1 8-TSSOPSupplier Device Package: 8-TSSOP Voltage Supply Source: Single Supply Independent Circuits: 2 Voltage - Supply: 4V ~ 5.5V Operating Temperature: -55°C ~ 125°C Type: Bus Switch Circuit: 1 x 1:1 Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Packaging: Bulk |
auf Bestellung 170165 Stücke: Lieferzeit 10-14 Tag (e) |
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7WBD3306AMUTCG | onsemi |
Description: IC BUS SWITCH 1 X 1:1 8-UDFNSupplier Device Package: 8-UDFN (1.8x1.2) Voltage Supply Source: Single Supply Independent Circuits: 2 Voltage - Supply: 4V ~ 5.5V Operating Temperature: -55°C ~ 125°C Type: Bus Switch Circuit: 1 x 1:1 Mounting Type: Surface Mount Package / Case: 8-UFDFN Packaging: Bulk |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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7WBD3306MUTAG | onsemi |
Description: IC BUS SWITCH 1 X 1:1 8-UDFNIndependent Circuits: 2 Voltage - Supply: 4V ~ 5.5V Operating Temperature: -55°C ~ 125°C Type: Bus Switch Circuit: 1 x 1:1 Mounting Type: Surface Mount Package / Case: 8-UFDFN Packaging: Bulk Supplier Device Package: 8-UDFN (1.8x1.2) Voltage Supply Source: Single Supply |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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SECO-NCP51561BADWR2G-GEVB | onsemi |
Description: APPLICATION DAUGHTER-CARD FOR NCUtilized IC / Part: NCP51561 Contents: Board(s) Type: Power Management Function: Gate Driver Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NZ8F9V1MX2WT5G | onsemi |
Description: DIODE ZENER 9.1V 250MW 2-X2DFNWCurrent - Reverse Leakage @ Vr: 500 nA @ 6 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 250 mW Supplier Device Package: 2-X2DFNW (1x0.6) Impedance (Max) (Zzt): 30 Ohms Voltage - Zener (Nom) (Vz): 9.1 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-XDFN Tolerance: ±5% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NZ8F9V1MX2WT5G | onsemi |
Description: DIODE ZENER 9.1V 250MW 2-X2DFNWPackage / Case: 2-XDFN Tolerance: ±5% Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 500 nA @ 6 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 250 mW Supplier Device Package: 2-X2DFNW (1x0.6) Impedance (Max) (Zzt): 30 Ohms Voltage - Zener (Nom) (Vz): 9.1 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank |
auf Bestellung 4565 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVBASH21MX2WT5G | onsemi |
Description: DIODE STANDARD 250V 0.2A X2DFNW2Capacitance @ Vr, F: 3pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-XDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 nA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 250 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: 2-X2DFNW (1x0.6) Current - Average Rectified (Io): 200mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NSVBASH21MX2WT5G | onsemi |
Description: DIODE STANDARD 250V 0.2A X2DFNW2Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 nA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 250 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 175°C Supplier Device Package: 2-X2DFNW (1x0.6) Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 3pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-XDFN Packaging: Cut Tape (CT) |
auf Bestellung 6460 Stücke: Lieferzeit 10-14 Tag (e) |
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SZNZ8F9V1MX2WT5G | onsemi |
Description: DIODE ZENER 9.1V 250MW 2-X2DFNWQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 500 nA @ 6 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 250 mW Grade: Automotive Supplier Device Package: 2-X2DFNW (1x0.6) Impedance (Max) (Zzt): 30 Ohms Voltage - Zener (Nom) (Vz): 9.1 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-XDFN Tolerance: ±5% Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SZNZ8F9V1MX2WT5G | onsemi |
Description: DIODE ZENER 9.1V 250MW 2-X2DFNWPackage / Case: 2-XDFN Tolerance: ±5% Packaging: Cut Tape (CT) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 500 nA @ 6 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 250 mW Grade: Automotive Supplier Device Package: 2-X2DFNW (1x0.6) Impedance (Max) (Zzt): 30 Ohms Voltage - Zener (Nom) (Vz): 9.1 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SZNZ8F5V1MX2WT5G | onsemi |
Description: DIODE ZENER 5.1V 250MW 2-X2DFNWOperating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-XDFN Tolerance: ±5% Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 250 mW Grade: Automotive Supplier Device Package: 2-X2DFNW (1x0.6) Impedance (Max) (Zzt): 80 Ohms Voltage - Zener (Nom) (Vz): 5.1 V |
auf Bestellung 136000 Stücke: Lieferzeit 10-14 Tag (e) |
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SZNZ8F5V1MX2WT5G | onsemi |
Description: DIODE ZENER 5.1V 250MW 2-X2DFNWQualification: AEC-Q101 Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Power - Max: 250 mW Grade: Automotive Supplier Device Package: 2-X2DFNW (1x0.6) Impedance (Max) (Zzt): 80 Ohms Voltage - Zener (Nom) (Vz): 5.1 V Operating Temperature: -65°C ~ 150°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-XDFN Tolerance: ±5% Packaging: Cut Tape (CT) |
auf Bestellung 136000 Stücke: Lieferzeit 10-14 Tag (e) |
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AR0145CS1C00SMKA0-CP-E | onsemi |
Description: 1MP, 1/4.3, GLOBAL SHUTTER IMAGEVoltage - Supply: 1.2V ~ 2.8V Operating Temperature: -30°C ~ 85°C Type: CMOS Package / Case: 47-VFBGA, CSPBGA Packaging: Tray Frames per Second: 120.0 Supplier Device Package: 47-ODCSP (5.74x4.42) Active Pixel Array: 1280H x 800V Pixel Size: 2.8µm x 2.8µm |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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AR0145CS1C28SMKA0-CP-E | onsemi |
Description: 1MP, 1/4.3, GLOBAL SHUTTER IMAGEFrames per Second: 120.0 Supplier Device Package: 47-ODCSP (5.74x4.42) Active Pixel Array: 1280H x 800V Pixel Size: 2.8µm x 2.8µm Voltage - Supply: 1.2V ~ 2.8V Operating Temperature: -30°C ~ 85°C Type: CMOS Package / Case: 47-VFBGA, CSPBGA Packaging: Tray |
auf Bestellung 50 Stücke: Lieferzeit 10-14 Tag (e) |
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FOD3120TS | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8SMDPackaging: Tube Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.5V Current - Peak Output: 3A Technology: Optical Coupling Current - Output High, Low: 2A, 2A Voltage - Isolation: 5000Vrms Approval Agency: UL Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 60ns, 60ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 400ns, 400ns Pulse Width Distortion (Max): 100ns Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 15V ~ 30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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CAT3200HU2-GT3 | onsemi |
Description: IC REG CHARGE PUMP ADJ/5V 8UDFNPackaging: Bulk Package / Case: 8-UFDFN Exposed Pad Output Type: Adjustable (Fixed) Mounting Type: Surface Mount Number of Outputs: 1 Function: Step-Up Current - Output: 100mA Operating Temperature: -40°C ~ 85°C (TA) Output Configuration: Positive Frequency - Switching: 2MHz Voltage - Input (Max): 4.5V Topology: Charge Pump Supplier Device Package: 8-UDFN (2x2) Synchronous Rectifier: No Voltage - Output (Max): 6V Voltage - Input (Min): 2.2V Voltage - Output (Min/Fixed): 2.7V (5V) |
auf Bestellung 538399 Stücke: Lieferzeit 10-14 Tag (e) |
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MBRF10H150CTG | onsemi |
Description: DIODE ARR SCHOTT 150V 5A TO220FPCurrent - Reverse Leakage @ Vr: 45 µA @ 150 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A Voltage - DC Reverse (Vr) (Max): 150 V Operating Temperature - Junction: -20°C ~ 150°C Supplier Device Package: TO-220FP Current - Average Rectified (Io) (per Diode): 5A Diode Configuration: 1 Pair Common Cathode Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Bulk |
auf Bestellung 103959 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTZD3155CT2G-M07 | onsemi |
Description: RECTIFIERS Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
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MC74HC574ADTR2G | onsemi |
Description: IC FF D-TYPE 1-ELE 8-BITPackaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 7.8mA, 7.8mA Trigger Type: Positive Edge Clock Frequency: 35 MHz Input Capacitance: 10 pF Supplier Device Package: 20-TSSOP Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF Number of Bits per Element: 8 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MC74HC574ADTR2G | onsemi |
Description: IC FF D-TYPE 1-ELE 8-BITPackaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 7.8mA, 7.8mA Trigger Type: Positive Edge Clock Frequency: 35 MHz Input Capacitance: 10 pF Supplier Device Package: 20-TSSOP Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF Number of Bits per Element: 8 |
auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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MC74HC574ADTR2G-Q | onsemi |
Description: IC FF D-TYPE 1-ELE 8-BITPackaging: Tape & Reel (TR) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Number of Elements: 1 Function: Standard Type: D-Type Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 2V ~ 6V Current - Quiescent (Iq): 4 µA Current - Output High, Low: 7.8mA, 7.8mA Trigger Type: Positive Edge Clock Frequency: 35 MHz Input Capacitance: 10 pF Supplier Device Package: 20-TSSOP Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF Number of Bits per Element: 8 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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NVBG030N120M3S-IE | onsemi |
Description: SIC MOS D2PAK-7L 30MOHM M3S 1200Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +22V, -10V Drive Voltage (Max Rds On, Min Rds On): 18V Grade: Automotive Supplier Device Package: D2PAK-7 Vgs(th) (Max) @ Id: 4.4V @ 15mA Power Dissipation (Max): 348W (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG030N120M3S-IE | onsemi |
Description: SIC MOS D2PAK-7L 30MOHM M3S 1200Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +22V, -10V Drive Voltage (Max Rds On, Min Rds On): 18V Grade: Automotive Supplier Device Package: D2PAK-7 Vgs(th) (Max) @ Id: 4.4V @ 15mA Power Dissipation (Max): 348W (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V Current - Continuous Drain (Id) @ 25°C: 77A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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MOC3022M | onsemi |
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIPPackaging: Tube Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Triac Mounting Type: Through Hole Operating Temperature: -40°C ~ 85°C Voltage - Forward (Vf) (Typ): 1.15V Voltage - Isolation: 4170Vrms Approval Agency: UL Current - Hold (Ih): 100µA (Typ) Supplier Device Package: 6-DIP Zero Crossing Circuit: No Current - LED Trigger (Ift) (Max): 10mA Number of Channels: 1 Voltage - Off State: 400 V Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 136103 Stücke: Lieferzeit 10-14 Tag (e) |
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RS1G | onsemi |
Description: DIODE STANDARD 400V 1A DO214ACCurrent - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 10pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Tape & Reel (TR) |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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RS1G | onsemi |
Description: DIODE STANDARD 400V 1A DO214ACCurrent - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: DO-214AC (SMA) Current - Average Rectified (Io): 1A Capacitance @ Vr, F: 10pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 150 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Packaging: Cut Tape (CT) |
auf Bestellung 13202 Stücke: Lieferzeit 10-14 Tag (e) |
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MC74VHC259DTG | onsemi |
Description: IC D-TYPE ADDR 1:8 16-TSSOPPackage / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Bulk Supplier Device Package: 16-TSSOP Delay Time - Propagation: 4.9ns Current - Output High, Low: 8mA, 8mA Independent Circuits: 1 Voltage - Supply: 2V ~ 5.5V Operating Temperature: -55°C ~ 125°C Logic Type: D-Type, Addressable Circuit: 1:8 Mounting Type: Surface Mount Output Type: Standard |
auf Bestellung 68216 Stücke: Lieferzeit 10-14 Tag (e) |
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MC74VHC259DG | onsemi |
Description: IC D-TYPE ADDR 1:8 16-SOICSupplier Device Package: 16-SOIC Delay Time - Propagation: 4.9ns Current - Output High, Low: 8mA, 8mA Independent Circuits: 1 Voltage - Supply: 2V ~ 5.5V Operating Temperature: -55°C ~ 125°C Logic Type: D-Type, Addressable Circuit: 1:8 Mounting Type: Surface Mount Output Type: Standard Package / Case: 16-SOIC (0.154", 3.90mm Width) Packaging: Bulk |
auf Bestellung 19488 Stücke: Lieferzeit 10-14 Tag (e) |
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MC74ACT259DR2 | onsemi |
Description: IC D-TYPE ADDR 1:8 16-SOICOutput Type: Standard Package / Case: 16-SOIC (0.154", 3.90mm Width) Packaging: Bulk Supplier Device Package: 16-SOIC Delay Time - Propagation: 6.5ns Current - Output High, Low: 24mA, 24mA Independent Circuits: 1 Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C Logic Type: D-Type, Addressable Circuit: 1:8 Mounting Type: Surface Mount |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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MC14050BDTR2G | onsemi |
Description: IC BUFF NON-INVERT 18V 16-TSSOPSupplier Device Package: 16-TSSOP Current - Output High, Low: 10mA, 40mA Number of Bits per Element: 1 Voltage - Supply: 3V ~ 18V Operating Temperature: -55°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 6 Mounting Type: Surface Mount Output Type: Push-Pull Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Bulk |
auf Bestellung 55916 Stücke: Lieferzeit 10-14 Tag (e) |
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SSR1N60BTM | onsemi |
Description: MOSFET N-CH 600V 900MA DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Tc) Rds On (Max) @ Id, Vgs: 12Ohm @ 450mA, 10V Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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SSR1N60BTM-WS | onsemi |
Description: MOSFET N-CH 600V 900MA DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Tc) Rds On (Max) @ Id, Vgs: 12Ohm @ 450mA, 10V Power Dissipation (Max): 2.5W (Ta), 28W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| KSC945CGBU |
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Hersteller: onsemi
Description: TRANS NPN 50V 0.15A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Description: TRANS NPN 50V 0.15A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
auf Bestellung 240470 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9486+ | 0.055 EUR |
| FAN7602BN |
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Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 125°C (TA)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: 8-DIP
Fault Protection: Over Load, Over Voltage
Voltage - Start Up: 12 V
Power (Watts): 48 W
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 125°C (TA)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: 8-DIP
Fault Protection: Over Load, Over Voltage
Voltage - Start Up: 12 V
Power (Watts): 48 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUT11A |
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Hersteller: onsemi
Description: TRANS NPN 450V 5A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 1mA
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 100 W
Description: TRANS NPN 450V 5A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 1mA
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 100 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUT11ATU |
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Hersteller: onsemi
Description: TRANS NPN 450V 5A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 1mA
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 100 W
Description: TRANS NPN 450V 5A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 1mA
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 100 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCL2801CDFDR2G |
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Hersteller: onsemi
Description: ENHANCED HIGH-EFFICIENCY POWER F
Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM)
Voltage - Supply: 10.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Current - Startup: 10 µA
Supplier Device Package: 8-SOIC
Description: ENHANCED HIGH-EFFICIENCY POWER F
Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM)
Voltage - Supply: 10.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Current - Startup: 10 µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NCL2801CDFDR2G |
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Hersteller: onsemi
Description: ENHANCED HIGH-EFFICIENCY POWER F
Current - Startup: 10 µA
Supplier Device Package: 8-SOIC
Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM)
Voltage - Supply: 10.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: ENHANCED HIGH-EFFICIENCY POWER F
Current - Startup: 10 µA
Supplier Device Package: 8-SOIC
Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM)
Voltage - Supply: 10.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FJY3002R |
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Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SC89-3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-89-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN 50V SC89-3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-89-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4743A |
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Hersteller: onsemi
Description: DIODE ZENER 13V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V
Description: DIODE ZENER 13V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V
auf Bestellung 9002 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 44+ | 0.48 EUR |
| 73+ | 0.29 EUR |
| 117+ | 0.18 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
| 3000+ | 0.098 EUR |
| 6000+ | 0.087 EUR |
| UJ4C075023B7S |
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Hersteller: onsemi
Description: 750V/23MOHM, N-OFF SIC CASCODE,
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Description: 750V/23MOHM, N-OFF SIC CASCODE,
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| UJ4C075023B7S |
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Hersteller: onsemi
Description: 750V/23MOHM, N-OFF SIC CASCODE,
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Packaging: Cut Tape (CT)
Description: 750V/23MOHM, N-OFF SIC CASCODE,
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Packaging: Cut Tape (CT)
auf Bestellung 445 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 35.5 EUR |
| 10+ | 25.38 EUR |
| 100+ | 24.41 EUR |
| NCV8505D2T50R4G |
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Hersteller: onsemi
Description: IC REG LINEAR 5V 400MA D2PAK-7
Qualification: AEC-Q100
Current - Supply (Max): 45 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.6V @ 400mA
Grade: Automotive
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: D2PAK-7
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 350 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 5V 400MA D2PAK-7
Qualification: AEC-Q100
Current - Supply (Max): 45 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.6V @ 400mA
Grade: Automotive
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: D2PAK-7
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 350 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 750+ | 3.17 EUR |
| 1500+ | 3.08 EUR |
| 2250+ | 3.03 EUR |
| 3750+ | 2.99 EUR |
| 5250+ | 2.96 EUR |
| NCV8505D2T50R4G |
![]() |
Hersteller: onsemi
Description: IC REG LINEAR 5V 400MA D2PAK-7
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Current - Supply (Max): 45 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.6V @ 400mA
Grade: Automotive
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: D2PAK-7
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 350 µA
Description: IC REG LINEAR 5V 400MA D2PAK-7
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Current - Supply (Max): 45 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.6V @ 400mA
Grade: Automotive
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: D2PAK-7
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 350 µA
auf Bestellung 13876 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.68 EUR |
| 10+ | 4.26 EUR |
| 25+ | 3.9 EUR |
| 100+ | 3.51 EUR |
| 250+ | 3.33 EUR |
| NVBG095N065SC1 |
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Hersteller: onsemi
Description: SIC MOS D2PAK-7L 650V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 4mA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V
Description: SIC MOS D2PAK-7L 650V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 4mA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V
auf Bestellung 5600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 10.38 EUR |
| NVBG095N065SC1 |
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Hersteller: onsemi
Description: SIC MOS D2PAK-7L 650V
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 4mA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Description: SIC MOS D2PAK-7L 650V
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 4mA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
auf Bestellung 6323 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 21.42 EUR |
| 10+ | 14.88 EUR |
| 100+ | 12.71 EUR |
| UJ4C075044B7S |
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Hersteller: onsemi
Description: 750V/44MOHM, N-OFF SIC CASCODE,
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 181W (Tc)
Description: 750V/44MOHM, N-OFF SIC CASCODE,
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 181W (Tc)
auf Bestellung 19200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 13.19 EUR |
| UJ4C075044B7S |
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Hersteller: onsemi
Description: 750V/44MOHM, N-OFF SIC CASCODE,
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 181W (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Description: 750V/44MOHM, N-OFF SIC CASCODE,
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 181W (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
auf Bestellung 19263 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.74 EUR |
| 10+ | 18.06 EUR |
| 100+ | 16.14 EUR |
| BZX85C18-T50R |
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Hersteller: onsemi
Description: DIODE ZENER 18V 1W DO204AL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V
Description: DIODE ZENER 18V 1W DO204AL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5492+ | 0.092 EUR |
| BZX85C18 |
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Hersteller: onsemi
Description: DIODE ZENER 18V 1W DO41
Packaging: Bulk
Tolerance: ±6%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V
Description: DIODE ZENER 18V 1W DO41
Packaging: Bulk
Tolerance: ±6%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX85C18-T50R |
![]() |
Hersteller: onsemi
Description: DIODE ZENER 18V 1W DO41
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V
Description: DIODE ZENER 18V 1W DO41
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LA1654FN-TLM-E-ON |
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 189+ | 2.88 EUR |
| DM74ALS245AMSAX |
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Hersteller: onsemi
Description: IC TXRX 4.5V/5.5V 20-SSOP
Supplier Device Package: 20-SSOP
Current - Output High, Low: 15mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Description: IC TXRX 4.5V/5.5V 20-SSOP
Supplier Device Package: 20-SSOP
Current - Output High, Low: 15mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Logic Type: Transceiver, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NP2100SAT3G |
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Hersteller: onsemi
Description: THYRISTOR 180V 50A DO-214AA
Packaging: Bulk
Current - Peak Pulse (10/1000µs): 50 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 4 V
Voltage - Off State: 180V
Voltage - Breakover: 240V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 37pF
Description: THYRISTOR 180V 50A DO-214AA
Packaging: Bulk
Current - Peak Pulse (10/1000µs): 50 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 4 V
Voltage - Off State: 180V
Voltage - Breakover: 240V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 37pF
auf Bestellung 9844 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1137+ | 0.48 EUR |
| NP2100SBT3G |
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Hersteller: onsemi
Description: THYRISTOR 180V 80A DO-214AA
Current - Peak Pulse (10/1000µs): 80 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 4 V
Voltage - Off State: 180V
Voltage - Breakover: 240V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 59pF
Packaging: Bulk
Description: THYRISTOR 180V 80A DO-214AA
Current - Peak Pulse (10/1000µs): 80 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 4 V
Voltage - Off State: 180V
Voltage - Breakover: 240V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 59pF
Packaging: Bulk
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 865+ | 0.63 EUR |
| NP2100SCT3G |
![]() |
Hersteller: onsemi
Description: THYRISTOR 180V 100A DO-214AA
Current - Peak Pulse (10/1000µs): 100 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 4 V
Voltage - Off State: 180V
Voltage - Breakover: 240V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 97pF
Packaging: Bulk
Description: THYRISTOR 180V 100A DO-214AA
Current - Peak Pulse (10/1000µs): 100 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 4 V
Voltage - Off State: 180V
Voltage - Breakover: 240V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 97pF
Packaging: Bulk
auf Bestellung 1735 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 699+ | 0.77 EUR |
| NVMFWS1D7N04XMT1G |
![]() |
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
Description: SINGLE N-CHANNEL POWER MOSFET 40
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 1.19 EUR |
| 3000+ | 1.15 EUR |
| NVMFWS1D7N04XMT1G |
![]() |
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Description: SINGLE N-CHANNEL POWER MOSFET 40
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
auf Bestellung 4297 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.45 EUR |
| 12+ | 1.78 EUR |
| 25+ | 1.62 EUR |
| 100+ | 1.43 EUR |
| 250+ | 1.34 EUR |
| 500+ | 1.3 EUR |
| NVMFS5834NLWFT1G-UM |
![]() |
Hersteller: onsemi
Description: POWER MOSFET 40V, 75A, 9.3 MOHM,
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1231 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: POWER MOSFET 40V, 75A, 9.3 MOHM,
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1231 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS5834NLWFT1G-UM |
![]() |
Hersteller: onsemi
Description: POWER MOSFET 40V, 75A, 9.3 MOHM,
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Bulk
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1231 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Description: POWER MOSFET 40V, 75A, 9.3 MOHM,
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Bulk
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1231 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 7WBD3306DTR2G |
![]() |
Hersteller: onsemi
Description: IC BUS SWITCH 1 X 1:1 8-TSSOP
Supplier Device Package: 8-TSSOP
Voltage Supply Source: Single Supply
Independent Circuits: 2
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Bus Switch
Circuit: 1 x 1:1
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Description: IC BUS SWITCH 1 X 1:1 8-TSSOP
Supplier Device Package: 8-TSSOP
Voltage Supply Source: Single Supply
Independent Circuits: 2
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Bus Switch
Circuit: 1 x 1:1
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
auf Bestellung 170165 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1209+ | 0.45 EUR |
| 7WBD3306AMUTCG |
![]() |
Hersteller: onsemi
Description: IC BUS SWITCH 1 X 1:1 8-UDFN
Supplier Device Package: 8-UDFN (1.8x1.2)
Voltage Supply Source: Single Supply
Independent Circuits: 2
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Bus Switch
Circuit: 1 x 1:1
Mounting Type: Surface Mount
Package / Case: 8-UFDFN
Packaging: Bulk
Description: IC BUS SWITCH 1 X 1:1 8-UDFN
Supplier Device Package: 8-UDFN (1.8x1.2)
Voltage Supply Source: Single Supply
Independent Circuits: 2
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Bus Switch
Circuit: 1 x 1:1
Mounting Type: Surface Mount
Package / Case: 8-UFDFN
Packaging: Bulk
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 818+ | 0.67 EUR |
| 7WBD3306MUTAG |
![]() |
Hersteller: onsemi
Description: IC BUS SWITCH 1 X 1:1 8-UDFN
Independent Circuits: 2
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Bus Switch
Circuit: 1 x 1:1
Mounting Type: Surface Mount
Package / Case: 8-UFDFN
Packaging: Bulk
Supplier Device Package: 8-UDFN (1.8x1.2)
Voltage Supply Source: Single Supply
Description: IC BUS SWITCH 1 X 1:1 8-UDFN
Independent Circuits: 2
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Bus Switch
Circuit: 1 x 1:1
Mounting Type: Surface Mount
Package / Case: 8-UFDFN
Packaging: Bulk
Supplier Device Package: 8-UDFN (1.8x1.2)
Voltage Supply Source: Single Supply
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 741+ | 0.73 EUR |
| SECO-NCP51561BADWR2G-GEVB |
![]() |
Hersteller: onsemi
Description: APPLICATION DAUGHTER-CARD FOR NC
Utilized IC / Part: NCP51561
Contents: Board(s)
Type: Power Management
Function: Gate Driver
Packaging: Bulk
Description: APPLICATION DAUGHTER-CARD FOR NC
Utilized IC / Part: NCP51561
Contents: Board(s)
Type: Power Management
Function: Gate Driver
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NZ8F9V1MX2WT5G |
![]() |
Hersteller: onsemi
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Supplier Device Package: 2-X2DFNW (1x0.6)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Supplier Device Package: 2-X2DFNW (1x0.6)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NZ8F9V1MX2WT5G |
![]() |
Hersteller: onsemi
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Package / Case: 2-XDFN
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Supplier Device Package: 2-X2DFNW (1x0.6)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Package / Case: 2-XDFN
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Supplier Device Package: 2-X2DFNW (1x0.6)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
auf Bestellung 4565 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 48+ | 0.44 EUR |
| 74+ | 0.29 EUR |
| 190+ | 0.11 EUR |
| 500+ | 0.1 EUR |
| 1000+ | 0.069 EUR |
| 2000+ | 0.064 EUR |
| NSVBASH21MX2WT5G |
![]() |
Hersteller: onsemi
Description: DIODE STANDARD 250V 0.2A X2DFNW2
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 250 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 2-X2DFNW (1x0.6)
Current - Average Rectified (Io): 200mA
Description: DIODE STANDARD 250V 0.2A X2DFNW2
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 250 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 2-X2DFNW (1x0.6)
Current - Average Rectified (Io): 200mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NSVBASH21MX2WT5G |
![]() |
Hersteller: onsemi
Description: DIODE STANDARD 250V 0.2A X2DFNW2
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 250 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 2-X2DFNW (1x0.6)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 250V 0.2A X2DFNW2
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 250 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: 2-X2DFNW (1x0.6)
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Packaging: Cut Tape (CT)
auf Bestellung 6460 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 0.77 EUR |
| 56+ | 0.38 EUR |
| 100+ | 0.26 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.17 EUR |
| 2000+ | 0.15 EUR |
| SZNZ8F9V1MX2WT5G |
![]() |
Hersteller: onsemi
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Grade: Automotive
Supplier Device Package: 2-X2DFNW (1x0.6)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Grade: Automotive
Supplier Device Package: 2-X2DFNW (1x0.6)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SZNZ8F9V1MX2WT5G |
![]() |
Hersteller: onsemi
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Package / Case: 2-XDFN
Tolerance: ±5%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Grade: Automotive
Supplier Device Package: 2-X2DFNW (1x0.6)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Description: DIODE ZENER 9.1V 250MW 2-X2DFNW
Package / Case: 2-XDFN
Tolerance: ±5%
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Grade: Automotive
Supplier Device Package: 2-X2DFNW (1x0.6)
Impedance (Max) (Zzt): 30 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SZNZ8F5V1MX2WT5G |
![]() |
Hersteller: onsemi
Description: DIODE ZENER 5.1V 250MW 2-X2DFNW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Grade: Automotive
Supplier Device Package: 2-X2DFNW (1x0.6)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Description: DIODE ZENER 5.1V 250MW 2-X2DFNW
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Grade: Automotive
Supplier Device Package: 2-X2DFNW (1x0.6)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
auf Bestellung 136000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8000+ | 0.1 EUR |
| 16000+ | 0.1 EUR |
| 24000+ | 0.1 EUR |
| 40000+ | 0.094 EUR |
| 56000+ | 0.084 EUR |
| 80000+ | 0.082 EUR |
| SZNZ8F5V1MX2WT5G |
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Hersteller: onsemi
Description: DIODE ZENER 5.1V 250MW 2-X2DFNW
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Grade: Automotive
Supplier Device Package: 2-X2DFNW (1x0.6)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Tolerance: ±5%
Packaging: Cut Tape (CT)
Description: DIODE ZENER 5.1V 250MW 2-X2DFNW
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 2 µA @ 1.5 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 250 mW
Grade: Automotive
Supplier Device Package: 2-X2DFNW (1x0.6)
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-XDFN
Tolerance: ±5%
Packaging: Cut Tape (CT)
auf Bestellung 136000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 34+ | 0.63 EUR |
| AR0145CS1C00SMKA0-CP-E |
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Hersteller: onsemi
Description: 1MP, 1/4.3, GLOBAL SHUTTER IMAGE
Voltage - Supply: 1.2V ~ 2.8V
Operating Temperature: -30°C ~ 85°C
Type: CMOS
Package / Case: 47-VFBGA, CSPBGA
Packaging: Tray
Frames per Second: 120.0
Supplier Device Package: 47-ODCSP (5.74x4.42)
Active Pixel Array: 1280H x 800V
Pixel Size: 2.8µm x 2.8µm
Description: 1MP, 1/4.3, GLOBAL SHUTTER IMAGE
Voltage - Supply: 1.2V ~ 2.8V
Operating Temperature: -30°C ~ 85°C
Type: CMOS
Package / Case: 47-VFBGA, CSPBGA
Packaging: Tray
Frames per Second: 120.0
Supplier Device Package: 47-ODCSP (5.74x4.42)
Active Pixel Array: 1280H x 800V
Pixel Size: 2.8µm x 2.8µm
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 72.09 EUR |
| 10+ | 58.77 EUR |
| 25+ | 55.45 EUR |
| AR0145CS1C28SMKA0-CP-E |
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Hersteller: onsemi
Description: 1MP, 1/4.3, GLOBAL SHUTTER IMAGE
Frames per Second: 120.0
Supplier Device Package: 47-ODCSP (5.74x4.42)
Active Pixel Array: 1280H x 800V
Pixel Size: 2.8µm x 2.8µm
Voltage - Supply: 1.2V ~ 2.8V
Operating Temperature: -30°C ~ 85°C
Type: CMOS
Package / Case: 47-VFBGA, CSPBGA
Packaging: Tray
Description: 1MP, 1/4.3, GLOBAL SHUTTER IMAGE
Frames per Second: 120.0
Supplier Device Package: 47-ODCSP (5.74x4.42)
Active Pixel Array: 1280H x 800V
Pixel Size: 2.8µm x 2.8µm
Voltage - Supply: 1.2V ~ 2.8V
Operating Temperature: -30°C ~ 85°C
Type: CMOS
Package / Case: 47-VFBGA, CSPBGA
Packaging: Tray
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 72.09 EUR |
| 10+ | 58.77 EUR |
| 25+ | 55.45 EUR |
| FOD3120TS |
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Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Pulse Width Distortion (Max): 100ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Pulse Width Distortion (Max): 100ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CAT3200HU2-GT3 |
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Hersteller: onsemi
Description: IC REG CHARGE PUMP ADJ/5V 8UDFN
Packaging: Bulk
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable (Fixed)
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2MHz
Voltage - Input (Max): 4.5V
Topology: Charge Pump
Supplier Device Package: 8-UDFN (2x2)
Synchronous Rectifier: No
Voltage - Output (Max): 6V
Voltage - Input (Min): 2.2V
Voltage - Output (Min/Fixed): 2.7V (5V)
Description: IC REG CHARGE PUMP ADJ/5V 8UDFN
Packaging: Bulk
Package / Case: 8-UFDFN Exposed Pad
Output Type: Adjustable (Fixed)
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Up
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 2MHz
Voltage - Input (Max): 4.5V
Topology: Charge Pump
Supplier Device Package: 8-UDFN (2x2)
Synchronous Rectifier: No
Voltage - Output (Max): 6V
Voltage - Input (Min): 2.2V
Voltage - Output (Min/Fixed): 2.7V (5V)
auf Bestellung 538399 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 235+ | 2.32 EUR |
| MBRF10H150CTG |
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Hersteller: onsemi
Description: DIODE ARR SCHOTT 150V 5A TO220FP
Current - Reverse Leakage @ Vr: 45 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -20°C ~ 150°C
Supplier Device Package: TO-220FP
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
Description: DIODE ARR SCHOTT 150V 5A TO220FP
Current - Reverse Leakage @ Vr: 45 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -20°C ~ 150°C
Supplier Device Package: TO-220FP
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Bulk
auf Bestellung 103959 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 329+ | 1.64 EUR |
| MC74HC574ADTR2G |
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Hersteller: onsemi
Description: IC FF D-TYPE 1-ELE 8-BIT
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Number of Bits per Element: 8
Description: IC FF D-TYPE 1-ELE 8-BIT
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Number of Bits per Element: 8
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| MC74HC574ADTR2G |
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Hersteller: onsemi
Description: IC FF D-TYPE 1-ELE 8-BIT
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Number of Bits per Element: 8
Description: IC FF D-TYPE 1-ELE 8-BIT
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Number of Bits per Element: 8
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 24+ | 0.88 EUR |
| 35+ | 0.62 EUR |
| 39+ | 0.55 EUR |
| 100+ | 0.48 EUR |
| 250+ | 0.44 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.4 EUR |
| MC74HC574ADTR2G-Q |
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Hersteller: onsemi
Description: IC FF D-TYPE 1-ELE 8-BIT
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Number of Bits per Element: 8
Description: IC FF D-TYPE 1-ELE 8-BIT
Packaging: Tape & Reel (TR)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Standard
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 27ns @ 6V, 50pF
Number of Bits per Element: 8
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NVBG030N120M3S-IE |
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Hersteller: onsemi
Description: SIC MOS D2PAK-7L 30MOHM M3S 1200
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Power Dissipation (Max): 348W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Description: SIC MOS D2PAK-7L 30MOHM M3S 1200
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Power Dissipation (Max): 348W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 29.63 EUR |
| NVBG030N120M3S-IE |
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Hersteller: onsemi
Description: SIC MOS D2PAK-7L 30MOHM M3S 1200
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Power Dissipation (Max): 348W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Description: SIC MOS D2PAK-7L 30MOHM M3S 1200
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +22V, -10V
Drive Voltage (Max Rds On, Min Rds On): 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Power Dissipation (Max): 348W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 45.51 EUR |
| 10+ | 36.58 EUR |
| 25+ | 34.36 EUR |
| 100+ | 31.9 EUR |
| 250+ | 30.74 EUR |
| MOC3022M |
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Hersteller: onsemi
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6DIP
Packaging: Tube
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Triac
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.15V
Voltage - Isolation: 4170Vrms
Approval Agency: UL
Current - Hold (Ih): 100µA (Typ)
Supplier Device Package: 6-DIP
Zero Crossing Circuit: No
Current - LED Trigger (Ift) (Max): 10mA
Number of Channels: 1
Voltage - Off State: 400 V
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 136103 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.62 EUR |
| 50+ | 0.89 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.64 EUR |
| 2000+ | 0.61 EUR |
| 5000+ | 0.57 EUR |
| 10000+ | 0.55 EUR |
| 25000+ | 0.51 EUR |
| RS1G |
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Hersteller: onsemi
Description: DIODE STANDARD 400V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
Description: DIODE STANDARD 400V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7500+ | 0.17 EUR |
| RS1G |
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Hersteller: onsemi
Description: DIODE STANDARD 400V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 400V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 13202 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 0.92 EUR |
| 38+ | 0.56 EUR |
| 100+ | 0.36 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.24 EUR |
| 2000+ | 0.21 EUR |
| MC74VHC259DTG |
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Hersteller: onsemi
Description: IC D-TYPE ADDR 1:8 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Supplier Device Package: 16-TSSOP
Delay Time - Propagation: 4.9ns
Current - Output High, Low: 8mA, 8mA
Independent Circuits: 1
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: D-Type, Addressable
Circuit: 1:8
Mounting Type: Surface Mount
Output Type: Standard
Description: IC D-TYPE ADDR 1:8 16-TSSOP
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Supplier Device Package: 16-TSSOP
Delay Time - Propagation: 4.9ns
Current - Output High, Low: 8mA, 8mA
Independent Circuits: 1
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: D-Type, Addressable
Circuit: 1:8
Mounting Type: Surface Mount
Output Type: Standard
auf Bestellung 68216 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 685+ | 0.8 EUR |
| MC74VHC259DG |
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Hersteller: onsemi
Description: IC D-TYPE ADDR 1:8 16-SOIC
Supplier Device Package: 16-SOIC
Delay Time - Propagation: 4.9ns
Current - Output High, Low: 8mA, 8mA
Independent Circuits: 1
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: D-Type, Addressable
Circuit: 1:8
Mounting Type: Surface Mount
Output Type: Standard
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Description: IC D-TYPE ADDR 1:8 16-SOIC
Supplier Device Package: 16-SOIC
Delay Time - Propagation: 4.9ns
Current - Output High, Low: 8mA, 8mA
Independent Circuits: 1
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: D-Type, Addressable
Circuit: 1:8
Mounting Type: Surface Mount
Output Type: Standard
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
auf Bestellung 19488 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 660+ | 0.81 EUR |
| MC74ACT259DR2 |
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Hersteller: onsemi
Description: IC D-TYPE ADDR 1:8 16-SOIC
Output Type: Standard
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Supplier Device Package: 16-SOIC
Delay Time - Propagation: 6.5ns
Current - Output High, Low: 24mA, 24mA
Independent Circuits: 1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: D-Type, Addressable
Circuit: 1:8
Mounting Type: Surface Mount
Description: IC D-TYPE ADDR 1:8 16-SOIC
Output Type: Standard
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Bulk
Supplier Device Package: 16-SOIC
Delay Time - Propagation: 6.5ns
Current - Output High, Low: 24mA, 24mA
Independent Circuits: 1
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: D-Type, Addressable
Circuit: 1:8
Mounting Type: Surface Mount
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 505+ | 1.08 EUR |
| MC14050BDTR2G |
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Hersteller: onsemi
Description: IC BUFF NON-INVERT 18V 16-TSSOP
Supplier Device Package: 16-TSSOP
Current - Output High, Low: 10mA, 40mA
Number of Bits per Element: 1
Voltage - Supply: 3V ~ 18V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 6
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
Description: IC BUFF NON-INVERT 18V 16-TSSOP
Supplier Device Package: 16-TSSOP
Current - Output High, Low: 10mA, 40mA
Number of Bits per Element: 1
Voltage - Supply: 3V ~ 18V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 6
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
auf Bestellung 55916 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 771+ | 0.7 EUR |
| SSR1N60BTM |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 900MA DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 12Ohm @ 450mA, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V
Description: MOSFET N-CH 600V 900MA DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 12Ohm @ 450mA, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SSR1N60BTM-WS |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 600V 900MA DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 12Ohm @ 450mA, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V
Description: MOSFET N-CH 600V 900MA DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Tc)
Rds On (Max) @ Id, Vgs: 12Ohm @ 450mA, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH































