Technische Details FCA47N60-F109 ON Semiconductor
Description: ONSEMI - FCA47N60-F109 - Leistungs-MOSFET, n-Kanal, 600 V, 47 A, 0.07 ohm, TO-3PN, Durchsteckmontage, tariffCode: 85412900, Transistormontage: Durchsteckmontage, Drain-Source-Spannung Vds: 600V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 47A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 5V, euEccn: NLR, Verlustleistung: 417W, Bauform - Transistor: TO-3PN, Anzahl der Pins: 3Pin(s), Produktpalette: SuperFET, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.07ohm, SVHC: Lead (25-Jun-2025).
Weitere Produktangebote FCA47N60-F109 nach Preis ab 11.2 EUR bis 30.56 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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FCA47N60-F109 | ON Semiconductor |
 Trans MOSFET N-CH 600V 47A 3-Pin(3+Tab) TO-3P Tube |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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FCA47N60-F109 | ON Semiconductor |
Trans MOSFET N-CH 600V 47A 3-Pin(3+Tab) TO-3P Tube |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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FCA47N60-F109 | onsemi |
Description: MOSFET N-CH 600V 47A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V |
auf Bestellung 190 Stücke: Lieferzeit 10-14 Tag (e) |
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FCA47N60-F109 | onsemi |
MOSFETs 650V SUPER FET |
auf Bestellung 558 Stücke: Lieferzeit 10-14 Tag (e) |
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FCA47N60-F109 | onsemi |
Description: MOSFET N-CH 600V 47A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V |
auf Bestellung 38 Stücke: Lieferzeit 10-14 Tag (e) |
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FCA47N60-F109 | ONSEMI |
Description: ONSEMI - FCA47N60-F109 - Leistungs-MOSFET, n-Kanal, 600 V, 47 A, 0.07 ohm, TO-3PN, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 600V rohsCompliant: Y-EX Dauer-Drainstrom Id: 47A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 417W Bauform - Transistor: TO-3PN Anzahl der Pins: 3Pin(s) Produktpalette: SuperFET productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.07ohm SVHC: Lead (25-Jun-2025) |
auf Bestellung 245 Stücke: Lieferzeit 14-21 Tag (e) |
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| FCA47N60-F109 |
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Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 47A 3-Pin(3+Tab) TO-3P Tube
Trans MOSFET N-CH 600V 47A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 450+ | 11.2 EUR |
| FCA47N60-F109 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH 600V 47A 3-Pin(3+Tab) TO-3P Tube
Trans MOSFET N-CH 600V 47A 3-Pin(3+Tab) TO-3P Tube
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 14.53 EUR |
| FCA47N60-F109 |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.76 EUR |
| 30+ | 13.78 EUR |
| FCA47N60-F109 |
|
Hersteller: onsemi
MOSFETs 650V SUPER FET
MOSFETs 650V SUPER FET
auf Bestellung 558 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.18 EUR |
| 10+ | 13.83 EUR |
| 120+ | 12 EUR |
| 1020+ | 11.98 EUR |
| FCA47N60-F109 |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 24.53 EUR |
| 30+ | 14.88 EUR |
| FCA47N60-F109 |
|
Hersteller: ONSEMI
Description: ONSEMI - FCA47N60-F109 - Leistungs-MOSFET, n-Kanal, 600 V, 47 A, 0.07 ohm, TO-3PN, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 600V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 47A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5V
euEccn: NLR
Verlustleistung: 417W
Bauform - Transistor: TO-3PN
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.07ohm
SVHC: Lead (25-Jun-2025)
Description: ONSEMI - FCA47N60-F109 - Leistungs-MOSFET, n-Kanal, 600 V, 47 A, 0.07 ohm, TO-3PN, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
Drain-Source-Spannung Vds: 600V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 47A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 5V
euEccn: NLR
Verlustleistung: 417W
Bauform - Transistor: TO-3PN
Anzahl der Pins: 3Pin(s)
Produktpalette: SuperFET
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.07ohm
SVHC: Lead (25-Jun-2025)
auf Bestellung 245 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 30.56 EUR |
| 11+ | 22.79 EUR |
| 14+ | 15.85 EUR |
| 50+ | 15.08 EUR |
| 100+ | 14.29 EUR |