FDC6320C Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: MOSFET N/P-CH 25V 0.22A SSOT6
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 220mA, 120mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Bulk
| Anzahl | Preis |
|---|---|
| 857+ | 0.53 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDC6320C Fairchild Semiconductor
Description: MOSFET N/P-CH 25V 0.22A SSOT6, Supplier Device Package: SuperSOT™-6, Vgs(th) (Max) @ Id: 1.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V, Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 220mA, 120mA, Drain to Source Voltage (Vdss): 25V, Power - Max: 700mW, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).
Weitere Produktangebote FDC6320C
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
FDC6320C | onsemi |
Description: MOSFET N/P-CH 25V 0.22A SSOT6 Supplier Device Package: SuperSOT™-6 Vgs(th) (Max) @ Id: 1.5V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V Current - Continuous Drain (Id) @ 25°C: 220mA, 120mA Drain to Source Voltage (Vdss): 25V Power - Max: 700mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
FDC6320C | ON Semiconductor / Fairchild |
MOSFET SSOT-6 COMP N-P-CH |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FDC6320C |
|
Hersteller: onsemi
Description: MOSFET N/P-CH 25V 0.22A SSOT6
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 220mA, 120mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Description: MOSFET N/P-CH 25V 0.22A SSOT6
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 220mA, 120mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 700mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDC6320C |
|
Hersteller: ON Semiconductor / Fairchild
MOSFET SSOT-6 COMP N-P-CH
MOSFET SSOT-6 COMP N-P-CH
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH