
FDC6320C ON Semiconductor
auf Bestellung 143468 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
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1537+ | 0.36 EUR |
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Technische Details FDC6320C ON Semiconductor
Description: MOSFET N/P-CH 25V 0.22A SSOT6, Packaging: Bulk, Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 700mW, Drain to Source Voltage (Vdss): 25V, Current - Continuous Drain (Id) @ 25°C: 220mA, 120mA, Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V, Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SuperSOT™-6.
Weitere Produktangebote FDC6320C nach Preis ab 0.41 EUR bis 0.41 EUR
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FDC6320C | Hersteller : Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 220mA, 120mA Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V Rds On (Max) @ Id, Vgs: 4Ohm @ 400mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 |
auf Bestellung 177000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDC6320C | Hersteller : ONSEMI |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V Kind of package: reel; tape Power dissipation: 0.9W Polarisation: unipolar Kind of transistor: complementary pair Kind of channel: enhancement Gate-source voltage: ±8V Mounting: SMD Case: SuperSOT-6 Drain-source voltage: 25/-25V Drain current: 0.22/-0.12A On-state resistance: 9/10Ω Type of transistor: N/P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDC6320C | Hersteller : ON Semiconductor / Fairchild |
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Produkt ist nicht verfügbar |
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FDC6320C | Hersteller : ONSEMI |
![]() Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 25/-25V Kind of package: reel; tape Power dissipation: 0.9W Polarisation: unipolar Kind of transistor: complementary pair Kind of channel: enhancement Gate-source voltage: ±8V Mounting: SMD Case: SuperSOT-6 Drain-source voltage: 25/-25V Drain current: 0.22/-0.12A On-state resistance: 9/10Ω Type of transistor: N/P-MOSFET |
Produkt ist nicht verfügbar |