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NVMFWD020N10MCLT1G

NVMFWD020N10MCLT1G onsemi

nvmfd020n10mcl-d.pdf
Hersteller: onsemi
Description: PTNG 100V LL SO8FL DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 54W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 35A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 789pF @ 50V
Rds On (Max) @ Id, Vgs: 20mOhm @ 48A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
Configuration: 2 N-Channel
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+1.27 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details NVMFWD020N10MCLT1G onsemi

Description: PTNG 100V LL SO8FL DUAL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3W (Ta), 54W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 35A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 789pF @ 50V, Rds On (Max) @ Id, Vgs: 20mOhm @ 48A, 10V, Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 1mA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Grade: Automotive, Qualification: AEC-Q101, Configuration: 2 N-Channel.

Weitere Produktangebote NVMFWD020N10MCLT1G nach Preis ab 1.44 EUR bis 4.5 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
NVMFWD020N10MCLT1G NVMFWD020N10MCLT1G onsemi nvmfd020n10mcl-d.pdf Description: PTNG 100V LL SO8FL DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 54W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 35A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 789pF @ 50V
Rds On (Max) @ Id, Vgs: 20mOhm @ 48A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.14 EUR
10+2.65 EUR
100+1.81 EUR
500+1.44 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWD020N10MCLT1G NVMFWD020N10MCLT1G onsemi nvmfd020n10mcl-d.pdf MOSFETs PTNG 100V LL SO8FL DUAL
auf Bestellung 1400 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.5 EUR
10+2.89 EUR
100+1.98 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWD020N10MCLT1G nvmfd020n10mcl-d.pdf
NVMFWD020N10MCLT1G
Hersteller: onsemi
Description: PTNG 100V LL SO8FL DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 54W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 35A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 789pF @ 50V
Rds On (Max) @ Id, Vgs: 20mOhm @ 48A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.7nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.14 EUR
10+2.65 EUR
100+1.81 EUR
500+1.44 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWD020N10MCLT1G nvmfd020n10mcl-d.pdf
NVMFWD020N10MCLT1G
Hersteller: onsemi
MOSFETs PTNG 100V LL SO8FL DUAL
auf Bestellung 1400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+4.5 EUR
10+2.89 EUR
100+1.98 EUR
Im Einkaufswagen  Stück im Wert von  UAH