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MJF3055 MJF3055 onsemi mjf3055-d.pdf Description: TRANS NPN 90V 10A TO-220FP
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 90 V
Current - Collector (Ic) (Max): 10 A
Supplier Device Package: TO-220FP
Frequency - Transition: 2MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 3.3A, 10A
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RS1B RS1B onsemi rs1m-d.pdf Description: DIODE STANDARD 100V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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RS1B RS1B onsemi rs1m-d.pdf Description: DIODE STANDARD 100V 1A DO214AC
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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NVTFS4824NTAG NVTFS4824NTAG onsemi nvtfs4824n-d.pdf Description: MOSFET N-CH 30V 18.2A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.2A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 23A, 10V
Power Dissipation (Max): 3.2W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 12 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5226B MMSZ5226B onsemi MMSZ5227B.pdf Description: DIODE ZENER 3.3V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Produkt ist nicht verfügbar
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FDC655AN FDC655AN onsemi FDC655AN.pdf Description: MOSFET N-CH 30V 6.3A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.3A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 15 V
Produkt ist nicht verfügbar
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CAT9554WI-G CAT9554WI-G onsemi CAT9554_ds.pdf Description: IC XPNDR 400KHZ I2C SMBUS 16SOIC
Packaging: Tube
DigiKey Programmable: Not Verified
Supplier Device Package: 16-SOIC
Interrupt Output: Yes
Clock Frequency: 400 kHz
Voltage - Supply: 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Number of I/O: 8
Interface: I2C, SMBus
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Features: POR
Produkt ist nicht verfügbar
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CAT9554YGI onsemi ONSMS19883-1.pdf?t.download=true&u=5oefqw Description: IC XPND 400KHZ I2C SMBUS 16TSSOP
Interface: I2C, SMBus
Mounting Type: Surface Mount
Output Type: Open Collector, Open Drain, Push-Pull
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Features: POR
Packaging: Bulk
DigiKey Programmable: Not Verified
Current - Output Source/Sink: 10mA, 24mA
Supplier Device Package: 16-TSSOP
Interrupt Output: Yes
Clock Frequency: 400 kHz
Voltage - Supply: 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Number of I/O: 8
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1N5338B 1N5338B onsemi 1n5333b-d.pdf Description: DIODE ZENER 5.1V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 1.5 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
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SIS5142D2R2G onsemi Description: PRINTER POWER CONTROL
Packaging: Bulk
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NCP303750MNTWG NCP303750MNTWG onsemi NCP303750MNTWG.pdf Description: 50A DCR DRMOS WITH OCP - 5X5
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Supplier Device Package: 31-PQFN (5x5)
Voltage - Load: 2.8V ~ 16V
Technology: NMOS
Current - Peak Output: 110A
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Voltage - Supply: 2.8V ~ 5.5V, 4.5V ~ 16V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: On/Off, PWM
Mounting Type: Surface Mount
Package / Case: 31-PowerWFQFN
Load Type: Inductive, Capacitive
Fault Protection: Current Limiting, Over Temperature, UVLO
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NCP303750MNTWG NCP303750MNTWG onsemi NCP303750MNTWG.pdf Description: 50A DCR DRMOS WITH OCP - 5X5
Voltage - Supply: 2.8V ~ 5.5V, 4.5V ~ 16V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: On/Off, PWM
Mounting Type: Surface Mount
Package / Case: 31-PowerWFQFN
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Load Type: Inductive, Capacitive
Fault Protection: Current Limiting, Over Temperature, UVLO
Supplier Device Package: 31-PQFN (5x5)
Voltage - Load: 2.8V ~ 16V
Technology: NMOS
Current - Peak Output: 110A
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
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FDMF6707C FDMF6707C onsemi FDMF6707C-D.pdf Description: IC HALF BRIDGE DRIVER 50A 40PQFN
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Bulk
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 15V
Technology: DrMOS
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Rds On (Typ): 1Ohm LS, 1Ohm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
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FDMF6705 FDMF6705 onsemi fdmf6705cn-d.pdf Description: IC HALF BRIDGE DRIVER 38A 40PQFN
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 24V
Technology: DrMOS
Current - Output / Channel: 38A
Applications: Synchronous Buck Converters
Rds On (Typ): 1Ohm LS, 1Ohm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Tape & Reel (TR)
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FDMF6705 FDMF6705 onsemi fdmf6705cn-d.pdf Description: IC HALF BRIDGE DRIVER 38A 40PQFN
Technology: DrMOS
Current - Output / Channel: 38A
Applications: Synchronous Buck Converters
Rds On (Typ): 1Ohm LS, 1Ohm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Cut Tape (CT)
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 24V
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FDMF6823B FDMF6823B onsemi FDMF6823B-D.PDF Description: IC HALF BRIDGE DRIVER 55A 40PQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 55A
Current - Peak Output: 55A
Technology: DrMOS, Power MOSFET
Voltage - Load: 3V ~ 16V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
Produkt ist nicht verfügbar
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FDMF6823B FDMF6823B onsemi FDMF6823B-D.PDF Description: IC HALF BRIDGE DRIVER 55A 40PQFN
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 55A
Current - Peak Output: 55A
Technology: DrMOS, Power MOSFET
Voltage - Load: 3V ~ 16V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
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SS9012HBU SS9012HBU onsemi ss9012-d.pdf Description: TRANS PNP 20V 0.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 144 @ 50mA, 1V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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BD136 BD136 onsemi BD136G-D.PDF Description: TRANS PNP 45V 1.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.25 W
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HLMP1301 onsemi MV5x64x%2C%20HLMP-15x3%2C130x.pdf Description: LED RED DIFFUSED T-1 T/H
Lens Transparency: Diffused
Supplier Device Package: T-1
Wavelength - Peak: 635nm
Height (Max): 6.30mm
Viewing Angle: 90°
Current - Test: 10mA
Lens Color: Red
Voltage - Forward (Vf) (Typ): 2V
Configuration: Standard
Millicandela Rating: 2.5mcd
Mounting Type: Through Hole
Color: Red
Package / Case: Radial
Packaging: Bulk
Lens Size: 3mm, T-1
Lens Style: Round with Domed Top
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MBR6045PT MBR6045PT onsemi mbr6045pt-d.pdf Description: DIODE ARRAY SCHOT 45V 30A SOT-93
Packaging: Tube
Package / Case: TO-218-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-93
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
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SBRS8120NT3G SBRS8120NT3G onsemi mbrs120t3-d.pdf Description: DIODE SCHOTTKY 20V 1A SMB
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 1A
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SBRS8120NT3G SBRS8120NT3G onsemi mbrs120t3-d.pdf Description: DIODE SCHOTTKY 20V 1A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
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IRF540 IRF540 onsemi IRF542.pdf Description: MOSFET N-CH 100V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
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NST3904F3T5G NST3904F3T5G onsemi nst3904f3-d.pdf Description: TRANS NPN 40V 0.2A SOT-1123
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Bulk
Power - Max: 290 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: SOT-1123
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HGTG30N60C3D HGTG30N60C3D onsemi hgtg30n60c3d-d.pdf Description: IGBT 600V 63A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247-3
Switching Energy: 1.05mJ (on), 2.5mJ (off)
Gate Charge: 162 nC
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 252 A
Power - Max: 208 W
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KAI-0340-FBA-CB-AA-SINGLE onsemi KAI-0340.pdf Description: INTERLINE CCD IMAGE SEN
Voltage - Supply: 14.5V ~ 15.5V
Operating Temperature: -50°C ~ 70°C
Type: CCD
Package / Case: 22-CDIP Module
Packaging: Tray
Frames per Second: 110.0
Supplier Device Package: 22-CDIP
Active Pixel Array: 640H x 480V
Pixel Size: 7.4µm x 7.4µm
Produkt ist nicht verfügbar
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MPS6602RLRA MPS6602RLRA onsemi MPS6601-D.PDF Description: TRANS NPN 40V 1A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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LM7815CT LM7815CT onsemi MC7800%28A%2CAE%29%2CNCV7800.pdf Description: IC REG LINEAR 15V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 15V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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KSC945CGBU KSC945CGBU onsemi FAIR-S-A0002364140-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 50V 0.15A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
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FAN7602BN FAN7602BN onsemi fan7602b-d.pdf Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 125°C (TA)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: 8-DIP
Fault Protection: Over Load, Over Voltage
Voltage - Start Up: 12 V
Power (Watts): 48 W
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BUT11A BUT11A onsemi BUT11A-D.PDF Description: TRANS NPN 450V 5A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 1mA
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 100 W
Produkt ist nicht verfügbar
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BUT11ATU BUT11ATU onsemi BUT11A-D.PDF Description: TRANS NPN 450V 5A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 1mA
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 100 W
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NCL2801CDFDR2G NCL2801CDFDR2G onsemi ncl2801-d.pdf Description: ENHANCED HIGH-EFFICIENCY POWER F
Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM)
Voltage - Supply: 10.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Current - Startup: 10 µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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NCL2801CDFDR2G NCL2801CDFDR2G onsemi ncl2801-d.pdf Description: ENHANCED HIGH-EFFICIENCY POWER F
Current - Startup: 10 µA
Supplier Device Package: 8-SOIC
Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM)
Voltage - Supply: 10.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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FJY3002R FJY3002R onsemi fjy3002r-d.pdf Description: TRANS PREBIAS NPN 50V SC89-3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-89-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1N4743A 1N4743A onsemi 1n4736at-d.pdf Description: DIODE ZENER 13V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V
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42+0.5 EUR
68+0.31 EUR
94+0.23 EUR
108+0.19 EUR
500+0.14 EUR
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UJ4C075023B7S UJ4C075023B7S onsemi UJ4C075023B7S-D.PDF Description: 750V/23MOHM, N-OFF SIC CASCODE,
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
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UJ4C075023B7S UJ4C075023B7S onsemi UJ4C075023B7S-D.PDF Description: 750V/23MOHM, N-OFF SIC CASCODE,
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Packaging: Cut Tape (CT)
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NCV8505D2T50R4G NCV8505D2T50R4G onsemi ncv8505-d.pdf Description: IC REG LINEAR 5V 400MA D2PAK-7
Qualification: AEC-Q100
Current - Supply (Max): 45 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.6V @ 400mA
Grade: Automotive
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: D2PAK-7
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 350 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
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NCV8505D2T50R4G NCV8505D2T50R4G onsemi ncv8505-d.pdf Description: IC REG LINEAR 5V 400MA D2PAK-7
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Current - Supply (Max): 45 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.6V @ 400mA
Grade: Automotive
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: D2PAK-7
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 350 µA
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NVBG095N065SC1 NVBG095N065SC1 onsemi nvbg095n065sc1-d.pdf Description: SIC MOS D2PAK-7L 650V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 4mA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V
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NVBG095N065SC1 NVBG095N065SC1 onsemi nvbg095n065sc1-d.pdf Description: SIC MOS D2PAK-7L 650V
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 4mA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
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UJ4C075044B7S UJ4C075044B7S onsemi UJ4C075044B7S-D.PDF Description: 750V/44MOHM, N-OFF SIC CASCODE,
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 181W (Tc)
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UJ4C075044B7S UJ4C075044B7S onsemi UJ4C075044B7S-D.PDF Description: 750V/44MOHM, N-OFF SIC CASCODE,
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 181W (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
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BZX85C18-T50R BZX85C18-T50R onsemi bzx85c3v3-d.pdf Description: DIODE ZENER 18V 1W DO204AL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V
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BZX85C18 BZX85C18 onsemi BZX85C3V3-D.PDF Description: DIODE ZENER 18V 1W DO41
Packaging: Bulk
Tolerance: ±6%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V
Produkt ist nicht verfügbar
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BZX85C18-T50R BZX85C18-T50R onsemi BZX85C3V3-D.PDF Description: DIODE ZENER 18V 1W DO41
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V
Produkt ist nicht verfügbar
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LA1654FN-TLM-E-ON LA1654FN-TLM-E-ON onsemi Description: TIME CODE RECEPTION IC
Packaging: Bulk
auf Bestellung 1000 Stücke:
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NP2100SAT3G NP2100SAT3G onsemi NPSERIES-D.pdf Description: THYRISTOR 180V 50A DO-214AA
Packaging: Bulk
Current - Peak Pulse (10/1000µs): 50 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 4 V
Voltage - Off State: 180V
Voltage - Breakover: 240V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 37pF
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NP2100SBT3G NP2100SBT3G onsemi NPSERIES-D.pdf Description: THYRISTOR 180V 80A DO-214AA
Current - Peak Pulse (10/1000µs): 80 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 4 V
Voltage - Off State: 180V
Voltage - Breakover: 240V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 59pF
Packaging: Bulk
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NP2100SCT3G NP2100SCT3G onsemi NPSERIES-D.pdf Description: THYRISTOR 180V 100A DO-214AA
Current - Peak Pulse (10/1000µs): 100 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 4 V
Voltage - Off State: 180V
Voltage - Breakover: 240V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 97pF
Packaging: Bulk
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NVMFWS1D7N04XMT1G NVMFWS1D7N04XMT1G onsemi nvmfws1d7n04xm-d.pdf Description: SINGLE N-CHANNEL POWER MOSFET 40
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
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NVMFWS1D7N04XMT1G NVMFWS1D7N04XMT1G onsemi nvmfws1d7n04xm-d.pdf Description: SINGLE N-CHANNEL POWER MOSFET 40
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
auf Bestellung 4297 Stücke:
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NVMFS5834NLWFT1G-UM NVMFS5834NLWFT1G-UM onsemi NTMFS5834NL-D.PDF Description: POWER MOSFET 40V, 75A, 9.3 MOHM,
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1231 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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NVMFS5834NLWFT1G-UM NVMFS5834NLWFT1G-UM onsemi NTMFS5834NL-D.PDF Description: POWER MOSFET 40V, 75A, 9.3 MOHM,
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Bulk
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1231 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Produkt ist nicht verfügbar
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7WBD3306DTR2G 7WBD3306DTR2G onsemi 7wbd3306-d.pdf Description: IC BUS SWITCH 1 X 1:1 8-TSSOP
Supplier Device Package: 8-TSSOP
Voltage Supply Source: Single Supply
Independent Circuits: 2
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Bus Switch
Circuit: 1 x 1:1
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
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7WBD3306AMUTCG 7WBD3306AMUTCG onsemi 7wbd3306-d.pdf Description: IC BUS SWITCH 1 X 1:1 8-UDFN
Supplier Device Package: 8-UDFN (1.8x1.2)
Voltage Supply Source: Single Supply
Independent Circuits: 2
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Bus Switch
Circuit: 1 x 1:1
Mounting Type: Surface Mount
Package / Case: 8-UFDFN
Packaging: Bulk
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7WBD3306MUTAG 7WBD3306MUTAG onsemi 7wbd3306-d.pdf Description: IC BUS SWITCH 1 X 1:1 8-UDFN
Independent Circuits: 2
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Bus Switch
Circuit: 1 x 1:1
Mounting Type: Surface Mount
Package / Case: 8-UFDFN
Packaging: Bulk
Supplier Device Package: 8-UDFN (1.8x1.2)
Voltage Supply Source: Single Supply
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SECO-NCP51561BADWR2G-GEVB SECO-NCP51561BADWR2G-GEVB onsemi evbum2756-d.pdf Description: APPLICATION DAUGHTER-CARD FOR NC
Utilized IC / Part: NCP51561
Contents: Board(s)
Type: Power Management
Function: Gate Driver
Packaging: Bulk
Produkt ist nicht verfügbar
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MJF3055 mjf3055-d.pdf
MJF3055
Hersteller: onsemi
Description: TRANS NPN 90V 10A TO-220FP
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Power - Max: 2 W
Voltage - Collector Emitter Breakdown (Max): 90 V
Current - Collector (Ic) (Max): 10 A
Supplier Device Package: TO-220FP
Frequency - Transition: 2MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Current - Collector Cutoff (Max): 1µA
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 3.3A, 10A
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RS1B rs1m-d.pdf
RS1B
Hersteller: onsemi
Description: DIODE STANDARD 100V 1A DO214AC
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Tape & Reel (TR)
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RS1B rs1m-d.pdf
RS1B
Hersteller: onsemi
Description: DIODE STANDARD 100V 1A DO214AC
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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NVTFS4824NTAG nvtfs4824n-d.pdf
NVTFS4824NTAG
Hersteller: onsemi
Description: MOSFET N-CH 30V 18.2A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.2A (Ta)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 23A, 10V
Power Dissipation (Max): 3.2W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1740 pF @ 12 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MMSZ5226B MMSZ5227B.pdf
MMSZ5226B
Hersteller: onsemi
Description: DIODE ZENER 3.3V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
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FDC655AN FDC655AN.pdf
FDC655AN
Hersteller: onsemi
Description: MOSFET N-CH 30V 6.3A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 27mOhm @ 6.3A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 830 pF @ 15 V
Produkt ist nicht verfügbar
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CAT9554WI-G CAT9554_ds.pdf
CAT9554WI-G
Hersteller: onsemi
Description: IC XPNDR 400KHZ I2C SMBUS 16SOIC
Packaging: Tube
DigiKey Programmable: Not Verified
Supplier Device Package: 16-SOIC
Interrupt Output: Yes
Clock Frequency: 400 kHz
Voltage - Supply: 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Number of I/O: 8
Interface: I2C, SMBus
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Features: POR
Produkt ist nicht verfügbar
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CAT9554YGI ONSMS19883-1.pdf?t.download=true&u=5oefqw
Hersteller: onsemi
Description: IC XPND 400KHZ I2C SMBUS 16TSSOP
Interface: I2C, SMBus
Mounting Type: Surface Mount
Output Type: Open Collector, Open Drain, Push-Pull
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Features: POR
Packaging: Bulk
DigiKey Programmable: Not Verified
Current - Output Source/Sink: 10mA, 24mA
Supplier Device Package: 16-TSSOP
Interrupt Output: Yes
Clock Frequency: 400 kHz
Voltage - Supply: 2.3V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Number of I/O: 8
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1N5338B 1n5333b-d.pdf
1N5338B
Hersteller: onsemi
Description: DIODE ZENER 5.1V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 1.5 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Produkt ist nicht verfügbar
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SIS5142D2R2G
Hersteller: onsemi
Description: PRINTER POWER CONTROL
Packaging: Bulk
auf Bestellung 60000 Stücke:
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2019+0.27 EUR
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NCP303750MNTWG NCP303750MNTWG.pdf
NCP303750MNTWG
Hersteller: onsemi
Description: 50A DCR DRMOS WITH OCP - 5X5
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Supplier Device Package: 31-PQFN (5x5)
Voltage - Load: 2.8V ~ 16V
Technology: NMOS
Current - Peak Output: 110A
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Voltage - Supply: 2.8V ~ 5.5V, 4.5V ~ 16V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: On/Off, PWM
Mounting Type: Surface Mount
Package / Case: 31-PowerWFQFN
Load Type: Inductive, Capacitive
Fault Protection: Current Limiting, Over Temperature, UVLO
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NCP303750MNTWG NCP303750MNTWG.pdf
NCP303750MNTWG
Hersteller: onsemi
Description: 50A DCR DRMOS WITH OCP - 5X5
Voltage - Supply: 2.8V ~ 5.5V, 4.5V ~ 16V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: On/Off, PWM
Mounting Type: Surface Mount
Package / Case: 31-PowerWFQFN
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Load Type: Inductive, Capacitive
Fault Protection: Current Limiting, Over Temperature, UVLO
Supplier Device Package: 31-PQFN (5x5)
Voltage - Load: 2.8V ~ 16V
Technology: NMOS
Current - Peak Output: 110A
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
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FDMF6707C FDMF6707C-D.pdf
FDMF6707C
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 50A 40PQFN
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Bulk
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 15V
Technology: DrMOS
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Rds On (Typ): 1Ohm LS, 1Ohm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
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FDMF6705 fdmf6705cn-d.pdf
FDMF6705
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 38A 40PQFN
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 24V
Technology: DrMOS
Current - Output / Channel: 38A
Applications: Synchronous Buck Converters
Rds On (Typ): 1Ohm LS, 1Ohm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDMF6705 fdmf6705cn-d.pdf
FDMF6705
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 38A 40PQFN
Technology: DrMOS
Current - Output / Channel: 38A
Applications: Synchronous Buck Converters
Rds On (Typ): 1Ohm LS, 1Ohm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Cut Tape (CT)
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 24V
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FDMF6823B FDMF6823B-D.PDF
FDMF6823B
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 55A 40PQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 55A
Current - Peak Output: 55A
Technology: DrMOS, Power MOSFET
Voltage - Load: 3V ~ 16V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
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FDMF6823B FDMF6823B-D.PDF
FDMF6823B
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 55A 40PQFN
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Diode Emulation
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 55A
Current - Peak Output: 55A
Technology: DrMOS, Power MOSFET
Voltage - Load: 3V ~ 16V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive, Capacitive, Resistive
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SS9012HBU ss9012-d.pdf
SS9012HBU
Hersteller: onsemi
Description: TRANS PNP 20V 0.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 144 @ 50mA, 1V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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BD136 BD136G-D.PDF
BD136
Hersteller: onsemi
Description: TRANS PNP 45V 1.5A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1.25 W
Produkt ist nicht verfügbar
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HLMP1301 MV5x64x%2C%20HLMP-15x3%2C130x.pdf
Hersteller: onsemi
Description: LED RED DIFFUSED T-1 T/H
Lens Transparency: Diffused
Supplier Device Package: T-1
Wavelength - Peak: 635nm
Height (Max): 6.30mm
Viewing Angle: 90°
Current - Test: 10mA
Lens Color: Red
Voltage - Forward (Vf) (Typ): 2V
Configuration: Standard
Millicandela Rating: 2.5mcd
Mounting Type: Through Hole
Color: Red
Package / Case: Radial
Packaging: Bulk
Lens Size: 3mm, T-1
Lens Style: Round with Domed Top
Produkt ist nicht verfügbar
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MBR6045PT mbr6045pt-d.pdf
MBR6045PT
Hersteller: onsemi
Description: DIODE ARRAY SCHOT 45V 30A SOT-93
Packaging: Tube
Package / Case: TO-218-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: SOT-93
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 30 A
Current - Reverse Leakage @ Vr: 1 mA @ 45 V
Produkt ist nicht verfügbar
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SBRS8120NT3G mbrs120t3-d.pdf
SBRS8120NT3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 20V 1A SMB
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 1A
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SBRS8120NT3G mbrs120t3-d.pdf
SBRS8120NT3G
Hersteller: onsemi
Description: DIODE SCHOTTKY 20V 1A SMB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 20 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
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IRF540 IRF542.pdf
IRF540
Hersteller: onsemi
Description: MOSFET N-CH 100V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 17A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Produkt ist nicht verfügbar
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NST3904F3T5G nst3904f3-d.pdf
NST3904F3T5G
Hersteller: onsemi
Description: TRANS NPN 40V 0.2A SOT-1123
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-1123
Packaging: Bulk
Power - Max: 290 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Supplier Device Package: SOT-1123
auf Bestellung 1099769 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3524+0.17 EUR
Mindestbestellmenge: 3524 Stücke
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HGTG30N60C3D hgtg30n60c3d-d.pdf
HGTG30N60C3D
Hersteller: onsemi
Description: IGBT 600V 63A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 30A
Supplier Device Package: TO-247-3
Switching Energy: 1.05mJ (on), 2.5mJ (off)
Gate Charge: 162 nC
Current - Collector (Ic) (Max): 63 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 252 A
Power - Max: 208 W
Produkt ist nicht verfügbar
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KAI-0340-FBA-CB-AA-SINGLE KAI-0340.pdf
Hersteller: onsemi
Description: INTERLINE CCD IMAGE SEN
Voltage - Supply: 14.5V ~ 15.5V
Operating Temperature: -50°C ~ 70°C
Type: CCD
Package / Case: 22-CDIP Module
Packaging: Tray
Frames per Second: 110.0
Supplier Device Package: 22-CDIP
Active Pixel Array: 640H x 480V
Pixel Size: 7.4µm x 7.4µm
Produkt ist nicht verfügbar
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MPS6602RLRA MPS6601-D.PDF
MPS6602RLRA
Hersteller: onsemi
Description: TRANS NPN 40V 1A TO92
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-92 (TO-226)
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 1V
Current - Collector Cutoff (Max): 100nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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LM7815CT MC7800%28A%2CAE%29%2CNCV7800.pdf
LM7815CT
Hersteller: onsemi
Description: IC REG LINEAR 15V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 15V
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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KSC945CGBU FAIR-S-A0002364140-1.pdf?t.download=true&u=5oefqw
KSC945CGBU
Hersteller: onsemi
Description: TRANS NPN 50V 0.15A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
auf Bestellung 240470 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
9486+0.055 EUR
Mindestbestellmenge: 9486 Stücke
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FAN7602BN fan7602b-d.pdf
FAN7602BN
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 125°C (TA)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: 8-DIP
Fault Protection: Over Load, Over Voltage
Voltage - Start Up: 12 V
Power (Watts): 48 W
Produkt ist nicht verfügbar
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BUT11A BUT11A-D.PDF
BUT11A
Hersteller: onsemi
Description: TRANS NPN 450V 5A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 1mA
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 100 W
Produkt ist nicht verfügbar
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BUT11ATU BUT11A-D.PDF
BUT11ATU
Hersteller: onsemi
Description: TRANS NPN 450V 5A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 1mA
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 450 V
Power - Max: 100 W
Produkt ist nicht verfügbar
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NCL2801CDFDR2G ncl2801-d.pdf
NCL2801CDFDR2G
Hersteller: onsemi
Description: ENHANCED HIGH-EFFICIENCY POWER F
Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM)
Voltage - Supply: 10.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Current - Startup: 10 µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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NCL2801CDFDR2G ncl2801-d.pdf
NCL2801CDFDR2G
Hersteller: onsemi
Description: ENHANCED HIGH-EFFICIENCY POWER F
Current - Startup: 10 µA
Supplier Device Package: 8-SOIC
Mode: Critical Conduction (CRM), Discontinuous Conduction (DCM)
Voltage - Supply: 10.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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FJY3002R fjy3002r-d.pdf
FJY3002R
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SC89-3
Resistors Included: R1 and R2
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SC-89-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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1N4743A 1n4736at-d.pdf
1N4743A
Hersteller: onsemi
Description: DIODE ZENER 13V 1W DO41
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 9.9 V
auf Bestellung 7957 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
42+0.5 EUR
68+0.31 EUR
94+0.23 EUR
108+0.19 EUR
500+0.14 EUR
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UJ4C075023B7S UJ4C075023B7S-D.PDF
UJ4C075023B7S
Hersteller: onsemi
Description: 750V/23MOHM, N-OFF SIC CASCODE,
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Produkt ist nicht verfügbar
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UJ4C075023B7S UJ4C075023B7S-D.PDF
UJ4C075023B7S
Hersteller: onsemi
Description: 750V/23MOHM, N-OFF SIC CASCODE,
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 278W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Packaging: Cut Tape (CT)
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+37.56 EUR
10+26.72 EUR
50+23.57 EUR
100+22.24 EUR
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NCV8505D2T50R4G ncv8505-d.pdf
NCV8505D2T50R4G
Hersteller: onsemi
Description: IC REG LINEAR 5V 400MA D2PAK-7
Qualification: AEC-Q100
Current - Supply (Max): 45 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.6V @ 400mA
Grade: Automotive
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: D2PAK-7
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 350 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
750+3.17 EUR
1500+3.08 EUR
2250+3.03 EUR
3750+2.99 EUR
5250+2.96 EUR
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NCV8505D2T50R4G ncv8505-d.pdf
NCV8505D2T50R4G
Hersteller: onsemi
Description: IC REG LINEAR 5V 400MA D2PAK-7
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Current - Supply (Max): 45 mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.6V @ 400mA
Grade: Automotive
Control Features: Enable, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: D2PAK-7
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 350 µA
auf Bestellung 13876 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.68 EUR
10+4.26 EUR
25+3.9 EUR
100+3.51 EUR
250+3.33 EUR
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NVBG095N065SC1 nvbg095n065sc1-d.pdf
NVBG095N065SC1
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 650V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 4mA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V
auf Bestellung 5600 Stücke:
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AnzahlPrivatkunde
800+10.38 EUR
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NVBG095N065SC1 nvbg095n065sc1-d.pdf
NVBG095N065SC1
Hersteller: onsemi
Description: SIC MOS D2PAK-7L 650V
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 956 pF @ 325 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 18 V
Drain to Source Voltage (Vdss): 650 V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 4.3V @ 4mA
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 12A, 18V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
FET Type: N-Channel
Technology: SiCFET (Silicon Carbide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
auf Bestellung 6323 Stücke:
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AnzahlPrivatkunde
1+21.42 EUR
10+14.88 EUR
100+12.71 EUR
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UJ4C075044B7S UJ4C075044B7S-D.PDF
UJ4C075044B7S
Hersteller: onsemi
Description: 750V/44MOHM, N-OFF SIC CASCODE,
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 181W (Tc)
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+12.01 EUR
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UJ4C075044B7S UJ4C075044B7S-D.PDF
UJ4C075044B7S
Hersteller: onsemi
Description: 750V/44MOHM, N-OFF SIC CASCODE,
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Drain to Source Voltage (Vdss): 750 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 12V
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 6V @ 10mA
Power Dissipation (Max): 181W (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
FET Type: N-Channel
Technology: SiCFET (Cascode SiCJFET)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
auf Bestellung 2463 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+25.7 EUR
10+17.96 EUR
50+14.7 EUR
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BZX85C18-T50R bzx85c3v3-d.pdf
BZX85C18-T50R
Hersteller: onsemi
Description: DIODE ZENER 18V 1W DO204AL
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5492+0.092 EUR
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BZX85C18 BZX85C3V3-D.PDF
BZX85C18
Hersteller: onsemi
Description: DIODE ZENER 18V 1W DO41
Packaging: Bulk
Tolerance: ±6%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V
Produkt ist nicht verfügbar
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BZX85C18-T50R BZX85C3V3-D.PDF
BZX85C18-T50R
Hersteller: onsemi
Description: DIODE ZENER 18V 1W DO41
Packaging: Tape & Reel (TR)
Tolerance: ±6%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 12.5 V
Produkt ist nicht verfügbar
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LA1654FN-TLM-E-ON
LA1654FN-TLM-E-ON
Hersteller: onsemi
Description: TIME CODE RECEPTION IC
Packaging: Bulk
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
189+2.88 EUR
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NP2100SAT3G NPSERIES-D.pdf
NP2100SAT3G
Hersteller: onsemi
Description: THYRISTOR 180V 50A DO-214AA
Packaging: Bulk
Current - Peak Pulse (10/1000µs): 50 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 4 V
Voltage - Off State: 180V
Voltage - Breakover: 240V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 37pF
auf Bestellung 9844 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1137+0.48 EUR
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NP2100SBT3G NPSERIES-D.pdf
NP2100SBT3G
Hersteller: onsemi
Description: THYRISTOR 180V 80A DO-214AA
Current - Peak Pulse (10/1000µs): 80 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 4 V
Voltage - Off State: 180V
Voltage - Breakover: 240V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 59pF
Packaging: Bulk
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
865+0.63 EUR
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NP2100SCT3G NPSERIES-D.pdf
NP2100SCT3G
Hersteller: onsemi
Description: THYRISTOR 180V 100A DO-214AA
Current - Peak Pulse (10/1000µs): 100 A
Current - Hold (Ih): 150 mA
Supplier Device Package: SMB
Voltage - On State: 4 V
Voltage - Off State: 180V
Voltage - Breakover: 240V
Number of Elements: 1
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Capacitance: 97pF
Packaging: Bulk
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AnzahlPrivatkunde
699+0.77 EUR
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NVMFWS1D7N04XMT1G nvmfws1d7n04xm-d.pdf
NVMFWS1D7N04XMT1G
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
auf Bestellung 3000 Stücke:
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1500+1.19 EUR
3000+1.15 EUR
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NVMFWS1D7N04XMT1G nvmfws1d7n04xm-d.pdf
NVMFWS1D7N04XMT1G
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1840 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3.5V @ 70µA
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 154A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
auf Bestellung 4297 Stücke:
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AnzahlPrivatkunde
9+2.45 EUR
12+1.78 EUR
25+1.62 EUR
100+1.43 EUR
250+1.34 EUR
500+1.3 EUR
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NVMFS5834NLWFT1G-UM NTMFS5834NL-D.PDF
NVMFS5834NLWFT1G-UM
Hersteller: onsemi
Description: POWER MOSFET 40V, 75A, 9.3 MOHM,
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1231 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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NVMFS5834NLWFT1G-UM NTMFS5834NL-D.PDF
NVMFS5834NLWFT1G-UM
Hersteller: onsemi
Description: POWER MOSFET 40V, 75A, 9.3 MOHM,
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 3.6W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Bulk
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1231 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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7WBD3306DTR2G 7wbd3306-d.pdf
7WBD3306DTR2G
Hersteller: onsemi
Description: IC BUS SWITCH 1 X 1:1 8-TSSOP
Supplier Device Package: 8-TSSOP
Voltage Supply Source: Single Supply
Independent Circuits: 2
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Bus Switch
Circuit: 1 x 1:1
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Bulk
auf Bestellung 170165 Stücke:
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AnzahlPrivatkunde
1209+0.45 EUR
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7WBD3306AMUTCG 7wbd3306-d.pdf
7WBD3306AMUTCG
Hersteller: onsemi
Description: IC BUS SWITCH 1 X 1:1 8-UDFN
Supplier Device Package: 8-UDFN (1.8x1.2)
Voltage Supply Source: Single Supply
Independent Circuits: 2
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Bus Switch
Circuit: 1 x 1:1
Mounting Type: Surface Mount
Package / Case: 8-UFDFN
Packaging: Bulk
auf Bestellung 3000 Stücke:
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AnzahlPrivatkunde
818+0.67 EUR
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7WBD3306MUTAG 7wbd3306-d.pdf
7WBD3306MUTAG
Hersteller: onsemi
Description: IC BUS SWITCH 1 X 1:1 8-UDFN
Independent Circuits: 2
Voltage - Supply: 4V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Type: Bus Switch
Circuit: 1 x 1:1
Mounting Type: Surface Mount
Package / Case: 8-UFDFN
Packaging: Bulk
Supplier Device Package: 8-UDFN (1.8x1.2)
Voltage Supply Source: Single Supply
auf Bestellung 12000 Stücke:
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AnzahlPrivatkunde
741+0.73 EUR
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SECO-NCP51561BADWR2G-GEVB evbum2756-d.pdf
SECO-NCP51561BADWR2G-GEVB
Hersteller: onsemi
Description: APPLICATION DAUGHTER-CARD FOR NC
Utilized IC / Part: NCP51561
Contents: Board(s)
Type: Power Management
Function: Gate Driver
Packaging: Bulk
Produkt ist nicht verfügbar
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