FDMS3006SDC ONSEMI
Hersteller: ONSEMI
Description: ONSEMI - FDMS3006SDC - FDMS3006SDC, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
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Technische Details FDMS3006SDC ONSEMI
Description: POWER FIELD-EFFECT TRANSISTOR, 3, Input Capacitance (Ciss) (Max) @ Vds: 5725 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: Dual Cool™56, Vgs(th) (Max) @ Id: 3V @ 1mA, Power Dissipation (Max): 3.3W (Ta), 89W (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 34A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Bulk.
Weitere Produktangebote FDMS3006SDC nach Preis ab 3 EUR bis 3 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
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FDMS3006SDC | onsemi |
Description: POWER FIELD-EFFECT TRANSISTOR, 3 Input Capacitance (Ciss) (Max) @ Vds: 5725 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: Dual Cool™56 Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 3.3W (Ta), 89W (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 34A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Bulk |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS3006SDC | ON Semiconductor / Fairchild |
MOSFET 30V N-Chan Dual Cool PowerTrench SyncFET |
auf Bestellung 2745 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDMS3006SDC |
|
Hersteller: onsemi
Description: POWER FIELD-EFFECT TRANSISTOR, 3
Input Capacitance (Ciss) (Max) @ Vds: 5725 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: Dual Cool™56
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 3.3W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
Description: POWER FIELD-EFFECT TRANSISTOR, 3
Input Capacitance (Ciss) (Max) @ Vds: 5725 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: Dual Cool™56
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 3.3W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Bulk
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 210+ | 3 EUR |
| FDMS3006SDC |
|
Hersteller: ON Semiconductor / Fairchild
MOSFET 30V N-Chan Dual Cool PowerTrench SyncFET
MOSFET 30V N-Chan Dual Cool PowerTrench SyncFET
auf Bestellung 2745 Stücke:
Lieferzeit 10-14 Tag (e)